APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

16 Oct 1989

Volume 55, Issue 16, pp. 1597-1690

Page 1 of 2 Pages Next Page | Jump to Page

Observation of nonlinear optical rectification at 10.6 μm in compositionally asymmetrical AlGaAs multiquantum wells

E. Rosencher, P. Bois, J. Nagle, E. Costard, and S. Delaitre

Appl. Phys. Lett. 55, 1597 (1989); http://dx.doi.org/10.1063/1.102248 (3 pages) | Cited 67 times

Full Text: | Download PDF

Show Abstract
We report the first experimental evidence of a nonlinear optical effect due to intersubband transitions in compositionally asymmetrical multiquantum wells. The effect is detected as an optical rectification signal appearing at the structure terminals when irradiated by a continuous 10.6 μm CO2 laser. The net electro‐optical coefficient of the structure is found to be 7.2 nm/V which is more than three orders of magnitude higher than for bulk GaAs. The results are in good agreement with theoretical predictions.
Show PACS
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
42.65.-k Nonlinear optics

Substructure in short optical pulses from gain‐switched semiconductor lasers

A. G. Weber, E. H. Böttcher, and D. Bimberg

Appl. Phys. Lett. 55, 1600 (1989); http://dx.doi.org/10.1063/1.102249 (3 pages) | Cited 6 times

Full Text: | Download PDF

Show Abstract
The spike‐like substructure in picosecond optical pulses from gain‐switched multimode injection lasers is analyzed. A theoretical description based on the interference of the randomly phased longitudinal laser modes and the transient shift of the envelope of the mode spectrum under gain‐switched operation is presented. Single shot, streak camera records and autocorrelation traces are simulated, describing all essential experimental features of the substructure like its random variation from pulse to pulse and inherent periodicity.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

High‐speed analog spatial light modulator using a hydrogenated amorphous silicon photosensor and an electroclinic liquid crystal

I. Abdulhalim, G. Moddel, and K. M. Johnson

Appl. Phys. Lett. 55, 1603 (1989); http://dx.doi.org/10.1063/1.102250 (3 pages) | Cited 22 times

Full Text: | Download PDF

Show Abstract
A high‐speed optically addressed spatial light modulator is described which uses the electroclinic effect in chiral smectic A liquid crystals with a p‐i‐n photodiode of hydrogenated amorphous silicon (a‐Si:H). The near microsecond response time is a function of the liquid‐crystal mixture and temperature. We present and analyze optical modulation measurements of a device which exhibits a response time of 40 μs at 29 °C and 4 μs at 50 °C. The optical response is continuous and linear with electric field and write‐light intensity, allowing for grey level applications.
Show PACS
42.79.Hp Optical processors, correlators, and modulators
61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order
78.20.Jq Electro-optical effects
85.60.Dw Photodiodes; phototransistors; photoresistors

Facet reflection independent, single longitudinal mode oscillation in a GaAlAs/GaAs distributed feedback laser equipped with a gain‐coupling mechanism

Yoshiaki Nakano, Yi Luo, and Kunio Tada

Appl. Phys. Lett. 55, 1606 (1989); http://dx.doi.org/10.1063/1.102254 (3 pages) | Cited 49 times

Full Text: | Download PDF

Show Abstract
By loading periodic loss perturbation into a GaAlAs/GaAs distributed feedback laser, we have realized complete single longitudinal mode oscillation which is hardly disturbed by cleaved facet reflection. Our coupled‐mode analysis explains this empirical result well.
Show PACS
42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.82.-m Integrated optics

Large optical nonlinearities in semiconductor superlattices

I. Morrison, M. Jaros, and A. W. Beavis

Appl. Phys. Lett. 55, 1609 (1989); http://dx.doi.org/10.1063/1.102234 (3 pages) | Cited 9 times

Full Text: | Download PDF

Show Abstract
We show that the nonlinear response of a direct‐gap semiconductor superlattice is greatly enhanced when the separation of the lowest two conduction minibands approaches the magnitude of the principal gap. Two structures exhibiting this enhanced nonlinear response are described.
Show PACS
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Broadband optical detection of ultrasound by optical sideband stripping with a confocal Fabry–Perot

J.‐P. Monchalin, R. Héon, P. Bouchard, and C. Padioleau

Appl. Phys. Lett. 55, 1612 (1989); http://dx.doi.org/10.1063/1.102235 (3 pages) | Cited 30 times

Full Text: | Download PDF

Show Abstract
A method which allows broadband optical detection of ultrasound with large étendue from a scattering surface is presented. The wave scattered by the surface interferes with a reference wave which is derived from the scattered wave after stripping it from its optical sidebands by a confocal resonator. Simple implementation by a confocal Fabry–Perot used in reflection is explained and demonstrated experimentally.
Show PACS
43.38.Zp Acoustooptic and photoacoustic transducers
43.35.Yb Ultrasonic instrumentation and measurement techniques
43.35.Sx Acoustooptical effects, optoacoustics, acoustical visualization, acoustical microscopy, and acoustical holography
43.35.Zc Use of ultrasonics in nondestructive testing, industrial processes, and industrial products

Superhigh‐rate plasma jet etching of silicon

L. Bárdos, S. Berg, and H‐O. Blom

Appl. Phys. Lett. 55, 1615 (1989); http://dx.doi.org/10.1063/1.102215 (3 pages) | Cited 20 times

Full Text: | Download PDF

Show Abstract
A new, very high rate dry etching system based on the plasma jet principle is presented. In this device the active gases are fed into the processing vacuum chamber through a small 0.5 mm i.d. nozzle. By applying radio frequency power (13.56 MHz) a hollow cathode discharge is created inside the nozzle. This discharge will be very intense and effective in dissociating the gas mixture used for reactive etching. A jet stream of radicals will be formed. By placing a silicon substrate in front of this jet stream it is possible to perform very high rate reactive etching of silicon. Etch rates as high as 0.1–0.2 mm/min can be easily obtained. It is demonstrated that the etch rate and the width of the etching crater are sensitive to different processing conditions. The width of the etching crater may be smaller than the diameter of the nozzle exit under certain conditions.
Show PACS
81.65.-b Surface treatments
85.40.Hp Lithography, masks and pattern transfer
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
52.75.-d Plasma devices

Plasma‐enhanced photoemission as a discharge lamp diagnostic

M. B. Schulman and D. R. Woodward

Appl. Phys. Lett. 55, 1618 (1989); http://dx.doi.org/10.1063/1.102216 (3 pages) | Cited 6 times

Full Text: | Download PDF

Show Abstract
We describe our application of plasma‐enhanced photoemission as an in situ electrode diagnostic for operating discharge lamps. The method uses focused low‐power laser beams of various wavelengths to investigate emission properties of cathodes in fluorescent lamps. When a pulsed laser beam is directed onto the cathode, the photoemission effect will cause electrons to be ejected if hν is greater than the effective work function of the surface over the area illuminated. This burst of photoelectrons can be monitored, as well as the optogalvanic signal which results as they enter the surrounding discharge and produce additional ionization. The photon energy at which photoemission is observed places an upper limit on the local effective work function, which is influenced by the electric field at the cathode surface.
Show PACS
52.70.Ds Electric and magnetic measurements
52.70.Nc Particle measurements
79.60.Jv Interfaces; heterostructures; nanostructures
52.80.Tn Other gas discharges

Characterization of reorientation of a thin layer of ferroelectric liquid‐crystal material under an applied field by excitation of optical modes

S. J. Elston and J. R. Sambles

Appl. Phys. Lett. 55, 1621 (1989); http://dx.doi.org/10.1063/1.102217 (3 pages) | Cited 33 times

Full Text: | Download PDF

Show Abstract
The director configuration in a thin layer of ferroelectric liquid crystal (FLC) under an applied static field is investigated by exciting optic modes in a FLC cell. The reflectivity data obtained may only be fitted to theory by maintaining in the voltage‐distorted optical tensor profile a point in the middle of the cell having the same structure as at 0 V. This unambiguously confirms the chevron structure observed in x‐ray diffraction and shows that the layering remains largely undistorted to fields of order 3×106 V m−1.
Show PACS
61.30.Eb Experimental determinations of smectic, nematic, cholesteric, and other structures
78.66.-w Optical properties of specific thin films
61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order
68.55.-a Thin film structure and morphology

Investigation of hydrogenated amorphous carbon coatings for magnetic data storage media by atomic force microscopy

E. Meyer, H. Heinzelmann, P. Grütter, Th. Jung, L. Scandella, H.‐R. Hidber, H. Rudin, H.‐J. Güntherodt, and C. Schmidt

Appl. Phys. Lett. 55, 1624 (1989); http://dx.doi.org/10.1063/1.102218 (3 pages) | Cited 3 times

Full Text: | Download PDF

Show Abstract
Thin films of hydrogenated amorphous carbon for magnetic data storage media have been examined by atomic force microscopy. The topography of several coatings has been imaged with a lateral resolution of a few nanometers. Histograms of the height distribution and rms values have been calculated to characterize the roughness of the surfaces quantitatively. Variations of these microscopic properties could be related to changes in the macroscopic behavior like friction and wear.
Show PACS
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.60.Bs Mechanical and acoustical properties
85.70.Li Other magnetic recording and storage devices (including tapes, disks, and drums)
68.37.-d Microscopy of surfaces, interfaces, and thin films

Spectroscopic determination of the electrostatic potential profile in a plasma‐prefilled ion diode

M. D. Coleman and D. A. Hammer

Appl. Phys. Lett. 55, 1627 (1989); http://dx.doi.org/10.1063/1.102219 (3 pages) | Cited 5 times

Full Text: | Download PDF

Show Abstract
The electrostatic potential profile in the accelerating gap in a plasma‐prefilled magnetically insulated intense pulsed ion beam diode has been determined using laser‐induced fluorescence spectroscopy. Results for a 300–400 kV planar diode are presented, both with and without an electron emitting vane protruding from the cathode. In both cases, a 5–6 mm accelerating gap forms in the 1012–1013/cm3 plasma in a few nanoseconds. The experimental potential profiles are not consistent with electrons confined to a sheath near the cathode. Rather, electrons are required throughout the gap to explain the observations.
Show PACS
52.59.Mv High-voltage diodes
52.70.Kz Optical (ultraviolet, visible, infrared) measurements
41.75.Ak Positive-ion beams
41.75.Cn Negative-ion beams
84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables

Electrical characterization of plasma generation in KrF laser Cu ablation

P. E. Dyer

Appl. Phys. Lett. 55, 1630 (1989); http://dx.doi.org/10.1063/1.102220 (3 pages) | Cited 38 times

Full Text: | Download PDF

Show Abstract
Ionization onset in the ablation plume from KrF laser‐irradiated Cu targets in vacuum leads to a fast‐rising voltage transient on the target. This, together with ion probe measurements, provides information on the plasma parameters. With 30 ns pulses, plasma initiates at ∼108 W cm−2; electron temperatures of 7 eV and ion energies of several hundred volts are produced at 2.2×108 W cm−2 .
Show PACS
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
79.20.Ds Laser-beam impact phenomena
52.70.Ds Electric and magnetic measurements
52.25.-b Plasma properties

Electrical and structural changes in the near surface of reactively ion etched InP

S. J. Pearton, U. K. Chakrabarti, and F. A. Baiocchi

Appl. Phys. Lett. 55, 1633 (1989); http://dx.doi.org/10.1063/1.102221 (3 pages) | Cited 42 times

Full Text: | Download PDF

Show Abstract
Near‐surface (∼1000 Å) modification in the net carrier concentration in n‐type InP (n=6×1015–1.5×1017 cm−3) was observed after reactive ion etching (RIE) in Cl‐based (CCl2F2/O2) or organic‐based (C2H6/H2) discharges. The carrier loss is slightly more pronounced in the latter case, due possibly to the creation of deep level, compensating acceptors at greater depths as a result of implantation of the light hydrogen ions. Near‐complete recovery of the initial carrier density occurs after annealing at 500 °C for 30 s. Structural disorder is detected by ion channeling to depths of ∼400 Å after C2H6/H2 RIE with a self‐bias of 380 V. This disorder shows significant recovery after 400 °C, 30 s annealing. Current‐voltage measurements on Au Schottky diodes showed ohmic behavior after etching of the InP in a C2H6/H2 discharge, due to the nonstoichiometric surface remaining after RIE. Diodes fabricated on CCl2F2/O2 etched material show only a slight increase in reverse current compared to unetched control samples.
Show PACS
81.40.Rs Electrical and magnetic properties related to treatment conditions
81.65.-b Surface treatments
61.80.Jh Ion radiation effects
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Selective epitaxial growth of Si on sapphire using electron beam irradiation

Kazuaki Sawada, Makoto Ishida, Tetsuro Nakamura, and Tetso Suzaki

Appl. Phys. Lett. 55, 1636 (1989); http://dx.doi.org/10.1063/1.102222 (3 pages) | Cited 1 time

Full Text: | Download PDF

Show Abstract
A new selective epitaxial growth method of silicon on sapphire by disilane gas‐source molecular beam epitaxy (MBE) is proposed. Selective epitaxial growth of Si films on sapphire was achieved by irradiation of an electron beam on the sapphire surface before Si MBE. Si was not deposited on the sapphire surface irradiated by an electron beam, and was grown epitaxially only on the nonirradiated area. The selective epitaxial growth was confirmed by optical micrographs, in situ reflection high‐energy electron diffraction, and Auger electron spectroscopy. It was recognized by x‐ray photoelectron spectroscopy that the sapphire surface was changed before and after electron beam irradiation: oxygen atoms on the sapphire surface were decreased due to irradiation of the electron beam and aluminum atoms mainly existed on the surface. This phenomenon can be considered to be the main cause of the selective epitaxial growth.
Show PACS
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
61.80.Fe Electron and positron radiation effects
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
79.60.Jv Interfaces; heterostructures; nanostructures

Efficient phosphorus doping of amorphous silicon carbide films

D. R. Bapat, K. L. Narasimhan, Shailendra Kumar, A. Sardesai, and S. T. Kshirsagar

Appl. Phys. Lett. 55, 1639 (1989); http://dx.doi.org/10.1063/1.102223 (2 pages)

Full Text: | Download PDF

Show Abstract
In this letter we report on improved phosphorus incorporation in amorphous SiC films as measured by the dc conductivity and activation energy. In this process, we show that preheating of the gas mixture is an important process parameter which leads to improved impurity incorporation.
Show PACS
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.40.Rs Electrical and magnetic properties related to treatment conditions
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Interfacial properties of n‐GaAs and polymer deposited by plasma chemical vapor deposition

Vardhireddy Manorama, S. V. Bhoraskar, V. J. Rao, and S. T. Kshirsagar

Appl. Phys. Lett. 55, 1641 (1989); http://dx.doi.org/10.1063/1.102224 (3 pages) | Cited 8 times

Full Text: | Download PDF

Show Abstract
The passivating effects of plasma polymerized thin films of thiophene on the intrinsic properties of the surface of n‐GaAs (100) have been studied by means of Raman scattering, photoluminescence, and capacitance‐voltage measurements. After passivation, the low‐temperature photoluminescence efficiency of n‐GaAs is increased three times and the surface barrier at the interface between polymer and GaAs is reduced. The surface electric field and barrier height determined by Raman scattering studies and also from capacitance‐voltage measurements are shown to be lowered implying that the band bending is controlled externally.
Show PACS
68.35.Dv Composition, segregation; defects and impurities
73.20.At Surface states, band structure, electron density of states
78.55.Cr III-V semiconductors
73.40.-c Electronic transport in interface structures

Synchrotron radiation assisted deposition of carbon films

Haruhiko Ohashi, Katsushi Inoue, Yoji Saito, Akira Yoshida, Hiroshi Ogawa, and Kosuke Shobatake

Appl. Phys. Lett. 55, 1644 (1989); http://dx.doi.org/10.1063/1.102225 (3 pages) | Cited 7 times

Full Text: | Download PDF

Show Abstract
Photochemical vapor deposition of carbon films from n‐butane gas has been successfully done, for the first time, at room temperature using synchrotron radiation as a light source. The deposited films are hydrogenated amorphous carbon films with sp3 bonds. The deposition rate increases with negative bias.
Show PACS
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
82.50.Bc Processes caused by infrared radiation
82.50.Hp Processes caused by visible and UV light
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)

Direct determination of the ambipolar diffusion length in GaAs/AlGaAs heterostructures by cathodoluminescence

H. A. Zarem, P. C. Sercel, J. A. Lebens, L. E. Eng, A. Yariv, and K. J. Vahala

Appl. Phys. Lett. 55, 1647 (1989); http://dx.doi.org/10.1063/1.102226 (3 pages) | Cited 38 times

Full Text: | Download PDF

Show Abstract
A new technique for determining carrier diffusion lengths by cathodoluminescence measurements is presented. The technique is extremely accurate and can be applied to a variety of structures. Ambipolar diffusion lengths are determined for GaAs quantum well material, bulk GaAs, Al0.21Ga0.79As, and Al0.37Ga0.63As. A large increase in the diffusion length is found for Al0.37Ga0.63As and is attributed to an order of magnitude increase in lifetime.
Show PACS
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
78.60.Hk Cathodoluminescence, ionoluminescence
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
72.80.Ey III-V and II-VI semiconductors

Implant and annealed ohmic contact to a thin quantum well

C. H. Yang, D. L. Plumton, R. Lodenkamper, and H. D. Shih

Appl. Phys. Lett. 55, 1650 (1989); http://dx.doi.org/10.1063/1.102227 (3 pages) | Cited 3 times

Full Text: | Download PDF

Show Abstract
We demonstrate for the first time that ion implantation and implant activation annealing, combined with a heavily doped InGaAs surface layer, can be used to make nonalloying shallow ohmic contact to an n‐type InGaAs (or GaAs) quantum well. Quantum Hall effect and Shubnikov–de Haas oscillations are clearly observed, which indicates that electrons in the quantum well remain two dimensional despite the post‐implantation high‐temperature annealing. This technique can be applied to devices that would need to make shallow ohmic contact to a thin (∼100 Å or less) quantum well, where existing selective etching approaches fail to work.
Show PACS
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Sulfur passivation of GaAs surfaces: A model for reduced surface recombination without band flattening

C. J. Spindt and W. E. Spicer

Appl. Phys. Lett. 55, 1653 (1989); http://dx.doi.org/10.1063/1.102228 (3 pages) | Cited 39 times

Full Text: | Download PDF

Show Abstract
It has been shown by several workers that the passivation of GaAs surfaces using sulfides results in a large reduction in the surface recombination velocity accompanied by an increase in the band bending on n‐type samples. This apparently contradictory pair of results leads to the suggestion that the responsible electronic states are a midgap donor compensated by an acceptor near the valence‐band maximum. We explore the consequences of such a model, particularly when the midgap state is assumed to be a double donor. In the double donor case, simple qualitative arguments indicate that the surface recombination velocity can be reduced by a factor much greater than the reduction in surface‐state density. The model is consistent with observations made using a variety of experimental techniques. A correlation between the electronic states and surface chemistry is made, and the As and Ga antisite defects are discussed as candidates for the donor and acceptor states.
Show PACS
81.65.-b Surface treatments
73.20.Hb Impurity and defect levels; energy states of adsorbed species
73.20.At Surface states, band structure, electron density of states
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Effect of Al mole fraction on electron emission at the AlxGa1−xAs/GaAs interface

J. S. Kleine, M. R. Melloch, and J. A. Cooper

Appl. Phys. Lett. 55, 1656 (1989); http://dx.doi.org/10.1063/1.102229 (3 pages) | Cited 1 time

Full Text: | Download PDF

Show Abstract
We report the first direct measurement of electron storage time at the AlxGa1−xAs/GaAs interface as a function of Al mole fraction x. Storage capacitors with x=0.4, 0.6, 0.8, and 1.0 were fabricated and their inversion layer electron retention times measured. The optimal mole fraction for electron retention is in the range 0.4≤x≤0.6.
Show PACS
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
84.32.Tt Capacitors
85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling

In situ measurements of critical layer thickness and optical studies of InGaAs quantum wells grown on GaAs substrates

B. Elman, Emil S. Koteles, P. Melman, C. Jagannath, Johnson Lee, and D. Dugger

Appl. Phys. Lett. 55, 1659 (1989); http://dx.doi.org/10.1063/1.102279 (3 pages) | Cited 44 times

Full Text: | Download PDF

Show Abstract
Reflection high‐energy electron diffraction (RHEED) intensity oscillations have been used during molecular beam epitaxy (MBE) to accurately determine threshold layer thicknesses for two‐dimensional (2D) growth of InxGa1−xAs on GaAs for a wide range of substrate temperatures and indium compositions. InxGa1−xAs/GaAs single quantum wells were also grown by MBE and studied using low‐temperature photoluminescence (PL) spectroscopy. PL peak energy, intensity, and linewidth measurements provided information on the critical layer thicknesses for the formation of dislocations which, under our experimental conditions, were the same as the threshold layer thicknesses for 2D growth measured from the damping behavior of RHEED intensity oscillations.
Show PACS
68.55.-a Thin film structure and morphology
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
61.05.jh Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)

Lateral dopant profiling with 200 nm resolution by scanning capacitance microscopy

C. C. Williams, J. Slinkman, W. P. Hough, and H. K. Wickramasinghe

Appl. Phys. Lett. 55, 1662 (1989); http://dx.doi.org/10.1063/1.102312 (3 pages) | Cited 83 times

Full Text: | Download PDF

Show Abstract
Measurement of dopant density in silicon with lateral resolution on the 200 nm scale has been demonstrated with a near‐field capacitance technique. The technique is based upon the measurement of local capacitance between a 100 nm tip and a semiconducting surface. Lateral dopant imaging is achieved by the measurement of the voltage‐dependent capacitance between tip and sample due to the depletion of carriers in the semiconductor, as the tip is scanned laterally over the surface. Measurements of dopant density have been demonstrated over a dopant range of 1015–1020 cm−3. Capacitance‐voltage measurements have been made on a submicrometer scale.
Show PACS
61.72.uf Ge and Si
07.50.-e Electrical and electronic instruments and components
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
68.37.-d Microscopy of surfaces, interfaces, and thin films

Nitridation‐induced surface donor layer in silicon

A. T. Wu, V. Murali, N. Cox, M. R. Frost, B. Triplett, and T. Y. Chan

Appl. Phys. Lett. 55, 1665 (1989); http://dx.doi.org/10.1063/1.102230 (3 pages) | Cited 5 times

Full Text: | Download PDF

Show Abstract
Thin (11.4 nm) gate quality silicon dioxide films were subjected to high‐temperature (850–1150 °C) rapid thermal nitridation cycles in ultrapure ammonia. Secondary‐ion mass spectroscopy and neutron depth profiling results indicate a significant level of nitrogen diffusion into the silicon substrate. After stripping the dielectric layers, Schottky diode studies were performed using an electrolyte‐based technique. We found, for the first time, the formation of nitridation‐induced ultrathin (less than 60 nm) n‐type layers at the top surface of nominally p‐type silicon substrates used in the study. A nitrogen‐oxygen donor complex formation mechanism is invoked to explain the presence of the ultrathin n‐type layers.
Show PACS
68.35.Fx Diffusion; interface formation
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
66.30.J- Diffusion of impurities
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Critical layer thickness in strained Ga1−xInxAs/InP quantum wells

H. Temkin, D. G. Gershoni, S. N. G. Chu, J. M. Vandenberg, R. A. Hamm, and M. B. Panish

Appl. Phys. Lett. 55, 1668 (1989); http://dx.doi.org/10.1063/1.102231 (3 pages) | Cited 42 times

Full Text: | Download PDF

Show Abstract
We use a combination of electrical, optical, and structural characterization techniques to determine the critical layer thickness of strained Ga1−xInxAs/InP quantum wells. Well compositions covering the entire range of strain available, from −3.8% (GaAs) to +3.2% (InAs), were investigated. We find that the critical layer thickness in this material system is unambiguously described by the classical Matthews and Blakeslee force balance model [J. Cryst. Growth 27, 118 (1974)]. Reverse leakage current of strained‐well samples grown in a p‐i‐n configuration is shown to be the most direct and reliable measure of the pseudomorphic limit.
Show PACS
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
73.61.Ey III-V semiconductors
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
Page 1 of 2 Pages Next Page | Jump to Page
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close