APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

23 Oct 1989

Volume 55, Issue 17, pp. 1701-1805

Page 2 of 2 Pages Previous Page | Jump to Page

X‐ray interference measurement of ultrathin semiconductor layers

C. R. Wie, J. C. Chen, H. M. Kim, P. L. Liu, Y.‐W. Choi, and D. M. Hwang

Appl. Phys. Lett. 55, 1774 (1989); http://dx.doi.org/10.1063/1.102189 (3 pages) | Cited 24 times

Full Text: | Download PDF

Show Abstract
We have characterized, using the interference structure in x‐ray rocking curves, a single or double strained GaInP layer grown on an InP substrate. The measured GaInP layer thicknesses are 9±3 Å and 107±3 Å for the single strained layer samples and 7 Å/50 Å and 32 Å/32 Å for the double strained layer samples. The rocking curve results for the 107 Å single‐barrier sample and the 7 Å/50 Å double‐barrier sample agreed well with the cross‐section transmission electron microscopy data and the secondary‐ion mass spectrometry data. The x‐ray interference structure for the single strained barrier samples indicates the existence of many half‐monolayer steps within the 1×1 mm2 x‐ray beam spot at each GaInP/InP interface.
Show PACS
68.55.-a Thin film structure and morphology
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.35.B- Structure of clean surfaces (and surface reconstruction)

Oscillations up to 420 GHz in GaAs/AlAs resonant tunneling diodes

E. R. Brown, T. C. L. G. Sollner, C. D. Parker, W. D. Goodhue, and C. L. Chen

Appl. Phys. Lett. 55, 1777 (1989); http://dx.doi.org/10.1063/1.102190 (3 pages) | Cited 127 times

Full Text: | Download PDF

Show Abstract
We report room‐temperature oscillations up to frequencies of 420 GHz in a GaAs resonant tunneling diode containing two 1.1‐nm‐thick AlAs barriers. These results are consistent with a recently proposed equivalent circuit model for these diodes in which an inductance accounts for the temporal delay associated with the quasibound‐state lifetime. They are also in accordance with a generalized impedance model, described here, that includes the effect of the transit time delay across the depletion layer. Although the peak‐to‐valley ratio of the 420 GHz diode is only 1.5:1 at room temperature, we show that its speed is limited by the parasitic series resistance rather than by the low negative conductance. A threefold reduction in this resistance, along with a comparable increase in the peak‐to‐valley ratio, should allow oscillations up to about 1 THz.
Show PACS
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.40.Gk Tunneling

Effect of heat treatments on the electrical resistivity of Sb‐doped amorphous Si films deposited by molecular beam on (100) Si

Y. Komem, M. Arienzo, and S. S. Iyer

Appl. Phys. Lett. 55, 1780 (1989); http://dx.doi.org/10.1063/1.102191 (3 pages)

Full Text: | Download PDF

Show Abstract
Amorphous silicon films, doped with antimony at a relative high concentration of ∼(4–5)×1020 cm−3, were deposited by means of a molecular beam on (100) Si substrates. These films were subsequently heat treated at temperatures between 500 and 700 °C for times between 5 s and 12 h. It was found that at 500 °C the resistivity decreased with time during solid phase epitaxial growth of the amorphous films and induced electrical activation of Sb ‘‘quenched‐in’’ the Si. At the higher temperatures, however, after an initial decrease to a minimum value the resistivity increased with the heat treatment time as a result of a precipitation of Sb from the supersaturated crystallized Si films. The times to obtain the minimum values of the resistivity are consistent with the rates of the solid phase epitaxial growth of amorphous Si films on (100) Si given in the literature for the various temperatures.
Show PACS
81.40.Rs Electrical and magnetic properties related to treatment conditions
81.15.Np Solid phase epitaxy; growth from solid phases
73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Transient grating dynamics in Cd1−xMnxTe diluted magnetic semiconductor superlattices

Alex Harwit, M. B. Ritter, J. M. Hong, D. D. Awschalom, and L. L. Chang

Appl. Phys. Lett. 55, 1783 (1989); http://dx.doi.org/10.1063/1.102192 (3 pages)

Full Text: | Download PDF

Show Abstract
The dynamics of carriers excited from both bulk and superlattice samples of Cd1−xMnxTe have been analyzed using a picosecond transient grating optical technique in a reflection geometry. Two distinct relaxation times were observed from the decays of orientational and carrier density gratings, yielding an upper bound on the ambipolar mobility of 6000 cm2/(V s). Measurements have been performed as functions of sample temperature, photon energy, and grating period.
Show PACS
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
42.79.Dj Gratings

Damage‐induced high‐resistivity regions in Al0.48In0.52As

S. J. Pearton, W. S. Hobson, and U. K. Chakrabarti

Appl. Phys. Lett. 55, 1786 (1989); http://dx.doi.org/10.1063/1.102173 (3 pages) | Cited 6 times

Full Text: | Download PDF

Show Abstract
The sheet resistivity of oxygen‐implanted n+‐Al0.48In0.52As grown on InP was measured as a function of oxygen ion dose and post‐implant annealing temperature. The sheet resistivity is >105 Ω/☒ after implantation for doses in the range 1012–8×1013 cm−2, and increases to >107 Ω/☒ after annealing at 500 °C. Temperature‐dependent Hall measurements show that the resistivity of this compensated AlInAs has a thermal activation energy of 0.68 eV. Above 600 °C the damage‐related compensation is removed and the material is returned to its original resistivity. We find no thermally stable, oxygen‐related deep acceptors in AlInAs, in contrast to the results for AlGaAs.
Show PACS
61.80.Jh Ion radiation effects
73.25.+i Surface conductivity and carrier phenomena
71.55.Eq III-V semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

High‐frequency study of nonequilibrium transport in heterostructure bipolar transistors

Y. K. Chen, A. F. J. Levi, R. N. Nottenburg, P. H. Beton, and M. B. Panish

Appl. Phys. Lett. 55, 1789 (1989); http://dx.doi.org/10.1063/1.102174 (3 pages) | Cited 4 times

Full Text: | Download PDF

Show Abstract
We report results of studying nonequilibrium transport in heterostructure bipolar transistors at a millimeter‐wave band. Increasing the total potential drop in the collector from 0.88 to 1.6 eV changes the measured intrinsic transit delay from 0.32 to 0.63 ps due to the increasing importance of intervalley scattering. Both the experimental and calculated data illustrate the role nonequilibrium transport and intervalley scattering have in determining the fundamental limits to device performance.
Show PACS
85.30.Pq Bipolar transistors
85.30.De Semiconductor-device characterization, design, and modeling
72.20.Ht High-field and nonlinear effects
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Growth of YBaCuO thin films on random and (100) aligned ZrO2 substrates

Q. Li, O. Meyer, X. X. Xi, J. Geerk, and G. Linker

Appl. Phys. Lett. 55, 1792 (1989); http://dx.doi.org/10.1063/1.102320 (3 pages) | Cited 29 times

Full Text: | Download PDF

Show Abstract
The growth quality of thin, superconducting YBaCuO films has been compared on random and (100) oriented yttrium‐stabilized zirconia substrates using x‐ray diffraction and ion channeling experiments. Superior growth is observed on (100) substrates with narrow mosaic distributions (0.4°) and a minimum yield value of 10% in the channeling experiment. The lattice matching required for epitaxial growth is achieved by azimuthal adjustment of the film plane with respect to the substrate. The superior growth is reflected in the film properties like the critical current density yielding values of 2×106 A/cm2 at 77 K.
Show PACS
74.78.-w Superconducting films and low-dimensional structures
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
74.70.-b Superconducting materials other than cuprates
74.25.Sv Critical currents

Deposition of epitaxial thin films of Nd1.85Ce0.15CuO4−y by laser ablation

A. Gupta, G. Koren, C. C. Tsuei, A. Segmüller, and T. R. McGuire

Appl. Phys. Lett. 55, 1795 (1989); http://dx.doi.org/10.1063/1.102321 (3 pages) | Cited 33 times

Full Text: | Download PDF

Show Abstract
Thin films of the electron‐doped superconductor Nd1.85 Ce0.15 CuO4−y have been deposited on (100) SrTiO3 substrates at 780 °C using the laser ablation technique. The deposited films are very smooth and show epitaxial growth with the c axis normal to the substrate. The transport properties of the films are very sensitive to the concentration of oxygen vacancies. Films deposited and cooled in the presence of 150 mTorr O2 exhibit localization behavior with no evidence of superconductivity down to 5 K. Superconductivity is observed on vacuum annealing the films in situ after deposition. Films with optimum concentration of oxygen vacancies show a superconducting onset temperature of 21 K and Tc (R=0) of 20 K, with a critical current density of 2×105 A/cm2 at 5.5 K in zero magnetic field.
Show PACS
74.78.-w Superconducting films and low-dimensional structures
81.15.Jj Ion and electron beam-assisted deposition; ion plating
81.15.Kk Vapor phase epitaxy; growth from vapor phase
74.25.Sv Critical currents
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition

Helical resonators containing high Tc ceramic superconductors

G. E. Peterson, R. P. Stawicki, and N. McN. Alford

Appl. Phys. Lett. 55, 1798 (1989); http://dx.doi.org/10.1063/1.102322 (3 pages) | Cited 5 times

Full Text: | Download PDF

Show Abstract
Resonators are the single most important ingredient in microwave and radio frequency circuits. We have produced some helical resonators using a bulk Ba2YCu3O7 high Tc ceramic superconductor. These resonators, which operate at 77 K and cover the frequency range from 0.1 to 2.0 GHz, outperform their all copper counterparts by at least a factor of 5 in unloaded Q.
Show PACS
85.25.Qc Superconducting surface acoustic wave devices and other superconducting devices
84.40.Dc Microwave circuits
84.40.Az Waveguides, transmission lines, striplines
74.70.-b Superconducting materials other than cuprates

Wet chemical techniques for passivation of YBa2Cu3O7−x

R. P. Vasquez, M. C. Foote, and B. D. Hunt

Appl. Phys. Lett. 55, 1801 (1989); http://dx.doi.org/10.1063/1.102323 (3 pages) | Cited 11 times

Full Text: | Download PDF

Show Abstract
Wet chemical techniques are described for treatment of YBa2Cu3O7−x surfaces, resulting in the formation of native compounds with little or no reactivity to water. Promising native compounds include CuI, BaSO4, CuS, Cu2S, and the oxalates, all of which are either insoluble or have very low solubility in water. Treatment with dilute HI results in the formation of anative iodide film which is 80–90% CuI with small amounts of YI3 and BaI2. Treatment with dilute H2SO4 results in the formation of a film which is 95% BaSO4 and 5% Y2(SO4)3. Cu2S is formed on the surface with a dilute Na2S solution. An oxalate film with equal amounts of Y2(C2O4)3 and BaC2O4 results from treatment with dilute oxalic acid. X‐ray photoelectron spectra show no significant changes when the sulfide, sulfate, or oxalate films are dipped in water, while the iodide film shows evidence of Cu(OH)2 formation.
Show PACS
74.78.-w Superconducting films and low-dimensional structures
74.70.-b Superconducting materials other than cuprates
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.65.-b Surface treatments
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
FREE

Comment on ‘‘Diffusion of Si in thin CoSi2 layers’’ [Appl. Phys. Lett. 54, 1314 (1989)]

F. M. d’Heurle

Appl. Phys. Lett. 55, 1804 (1989); http://dx.doi.org/10.1063/1.102324 (1 page) | Cited 1 time

Full Text: | Download PDF

Abstract Unavailable
Show PACS
66.30.J- Diffusion of impurities
68.35.Fx Diffusion; interface formation
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
FREE

Response to ‘‘Comment on ‘Diffusion of Si in thin CoSi2 layers’ ’’ [Appl. Phys. Lett. 55, 1804 (1989)]

F. D. Schowengerdt, T. L. Lin, R. W. Fathauer, and P. J. Grunthaner

Appl. Phys. Lett. 55, 1804 (1989); http://dx.doi.org/10.1063/1.102325 (2 pages)

Full Text: | Download PDF

Abstract Unavailable
Show PACS
66.30.J- Diffusion of impurities
68.35.Fx Diffusion; interface formation
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
Page 2 of 2 Pages Previous Page | Jump to Page
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close