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30 Oct 1989

Volume 55, Issue 18, pp. 1817-1926

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5:1 on‐off contrast InGaAs/InP multiple quantum well Fabry–Perot étalon modulator

A. Tomita, Y. Kohga, A. Suzuki, T. Terakado, and A. Ajisawa

Appl. Phys. Lett. 55, 1817 (1989); http://dx.doi.org/10.1063/1.102175 (3 pages) | Cited 9 times

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We report the first demonstration of an InGaAs/InP multiple quantum well Fabry–Perot étalon modulator. The obtained on‐off contrast is 5:1 at −16 V applied voltage for 1540 nm wavelength light. The absorption coefficient of the multiple quantum well around 1540 nm increases from 1000 to 6300 cm−1 as the applied voltage increases from 0 to −16 V, and the relative refractive index change is up to −0.9%.
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42.79.Hp Optical processors, correlators, and modulators
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Crucial influence of the twist deformation on degenerate four‐wave mixing process in homeotropically aligned nematic liquid crystals

Shu‐Hsia Chen and Chen‐Lung Kuo

Appl. Phys. Lett. 55, 1820 (1989); http://dx.doi.org/10.1063/1.102176 (3 pages) | Cited 8 times

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The diffraction efficiency suppression and peak shifting from the Freedericksz threshold voltage are predicted for degenerate four‐wave mixing process in a low‐frequency ac voltage‐biased homeotropically aligned nematic liquid crystal film. The crucial factor is the twist deformation in the induced phase grating. Significant amounts of diffraction efficiency suppression and peak shift are shown both in numerical and experimental results.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.79.Dj Gratings
61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order
78.20.Jq Electro-optical effects

Effect of two‐photon absorption on all‐optical guided‐wave devices

K. W. DeLong, K. B. Rochford, and G. I. Stegeman

Appl. Phys. Lett. 55, 1823 (1989); http://dx.doi.org/10.1063/1.102177 (3 pages) | Cited 37 times

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We show that two‐photon absorption can lead to serious deterioration in the all‐optical switching characteristics of nonlinear directional couplers and distributed feedback gratings.
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42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
42.79.Gn Optical waveguides and couplers
42.79.Dj Gratings

Frequency modulation response of tunable two‐segment distributed feedback lasers

M. Kuznetsov, A. E. Willner, and I. P. Kaminow

Appl. Phys. Lett. 55, 1826 (1989); http://dx.doi.org/10.1063/1.102178 (3 pages) | Cited 6 times

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We describe for the first time the theory of frequency modulation (FM) response in distributed feedback (DFB) lasers with two active segments. FM response is enhanced due to two‐segment operation; the enhancement decreases at higher modulation frequencies and higher photon densities. Bandwidth of the response can extend to the multigigahertz range. The FM response is dramatically different in lasers operating in the red‐ and blue‐shifted static tuning regimes. We find good agreement between the theory and our measurements of multigigahertz FM response of two‐segment DFB lasers.
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42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
85.60.Jb Light-emitting devices

Observation of nonlinear optical transmission and switching phenomena in polydiacetylene‐based directional couplers

Paul D. Townsend, J. L. Jackel, Gregory L. Baker, J. A. Shelburne, and S. Etemad

Appl. Phys. Lett. 55, 1829 (1989); http://dx.doi.org/10.1063/1.102179 (3 pages) | Cited 47 times

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Nonlinear optical transmission and switching phenomena have been observed in directional coupler devices fabricated from soluble polydiacetylenes. Effects due to both slow thermal nonlinearities and ultrafast (picosecond) electronic nonlinearities were identified. At the operating wavelength of 1.06 μm used here, the ultrafast electronic nonlinear phenomena originated from intensity‐dependent changes in the imaginary part of the refractive index due to two‐photon absorption effects.
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42.79.Gn Optical waveguides and couplers
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
78.66.Qn Polymers; organic compounds
42.65.Pc Optical bistability, multistability, and switching, including local field effects

Abrupt phase reversal in frequency‐modulated external‐cavity semiconductor lasers

A. Schremer and C. L. Tang

Appl. Phys. Lett. 55, 1832 (1989); http://dx.doi.org/10.1063/1.102180 (3 pages) | Cited 3 times

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The carrier‐induced optical frequency deviation undergoes an unusual phase reversal in external‐cavity semiconductor lasers when the modulation frequency is equal to that of the external‐cavity mode spacing. A model based on the coherent nature of the external optical feedback is used to explain this phenomenon.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
42.55.Ah General laser theory
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Microscopic imaging of residual stress using a scanning phase‐measuring acoustic microscope

Steven W. Meeks, D. Peter, D. Horne, K. Young, and V. Novotny

Appl. Phys. Lett. 55, 1835 (1989); http://dx.doi.org/10.1063/1.102326 (3 pages) | Cited 5 times

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A high‐resolution scanning phase‐measuring acoustic microscope (SPAM) has been developed and used to image the near‐surface residual stress field around features etched in sputtered alumina via the acoustoelastic effect. This microscope operates at 670 MHz and has a resolution of 5–10 μm, depending upon the amount of defocus. Relative velocity changes of sample surface waves as small as 50 ppm are resolved. Images of the stress field at the tip of a 400‐μm‐wide slot etched in alumina are presented and compared with a finite element simulation. The SPAM uses an unconventional acoustic lens with an anisotropic illumination pattern which can measure anisotropic effects and map residual stress fields with several μm resolution and a stress sensitivity of 1/3 MPa in an alumina film.
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43.58.Ls Acoustical lenses and microscopes
43.35.Sx Acoustooptical effects, optoacoustics, acoustical visualization, acoustical microscopy, and acoustical holography
43.35.Yb Ultrasonic instrumentation and measurement techniques
68.60.Bs Mechanical and acoustical properties

Reduction of secondary defect formation in MeV B+ ion‐implanted Si (100)

W. X. Lu, Y. H. Qian, R. H. Tian, Z. L. Wang, R. J. Schreutelkamp, J. R. Liefting, and F. W. Saris

Appl. Phys. Lett. 55, 1838 (1989); http://dx.doi.org/10.1063/1.102181 (3 pages) | Cited 17 times

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MeV ion implantation in Si above a dose of 1014/cm2 leads to secondary defect formation in a buried layer, which is rather stable. Annealing of Si(100) implanted with 2.0 MeV B+ ions to a dose of 2.2×1014/cm2 has been investigated by means of cross‐sectional transmission electron microscopy. After annealing at 900 °C for 15 min, dislocation loops elongated along [110] were found. A remarkable decrease in secondary defect formation has been observed if, in addition, 140 keV Si+ was implanted prior to annealing.
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61.72.Bb Theories and models of crystal defects
61.72.uf Ge and Si
61.80.Jh Ion radiation effects
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients

Time‐resolved transmission of thin gold films during laser blow‐off

Robert J. Baseman and Nan M. Froberg

Appl. Phys. Lett. 55, 1841 (1989); http://dx.doi.org/10.1063/1.102182 (3 pages) | Cited 12 times

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The transmission through thin gold films on optical quartz during laser blow‐off with 15 ns, 532 nm laser pulses has been measured. Dramatic changes in transmission mark the duration of the blow‐off event with laser fluences above the threshold for removal. The integrated laser fluence required to blow‐off the films is roughly independent of incident laser fluence, and is close to that expected to raise the temperature of the film to the boiling point at the film‐support interface.
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79.20.Ds Laser-beam impact phenomena
78.66.Bz Metals and metallic alloys
81.15.Rs Spray coating techniques
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Electric field induced solidification

R. Tao, J. T. Woestman, and N. K. Jaggi

Appl. Phys. Lett. 55, 1844 (1989); http://dx.doi.org/10.1063/1.102183 (3 pages) | Cited 37 times

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We present a description of electrorheological fluids in terms of an electric field induced phase transition at a critical electric field Ec. Theoretically, we find that as the applied field exceeds Ec, the osmotic pressure becomes negative and the liquid experiences a phase transition to a solid phase. Ec is experimentally determined as a function of concentration in one system. Our theoretically predicted phase diagram is in reasonable agreement with our experimental data.
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62.10.+s Mechanical properties of liquids
64.70.D- Solid-liquid transitions
81.30.-t Phase diagrams and microstructures developed by solidification and solid-solid phase transformations
82.70.-y Disperse systems; complex fluids

Efficient simulation technique to compute effective properties of heterogeneous media

S. Torquato and In Chan Kim

Appl. Phys. Lett. 55, 1847 (1989); http://dx.doi.org/10.1063/1.102184 (3 pages) | Cited 50 times

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We present a new simulation technique to ‘‘exactly’’ yield effective transport properties of disordered heterogeneous media in which the transport process is governed by a steady‐state diffusion equation. Hence, the algorithm, which is based upon simulating the Brownian motion of a diffusing particle, can be applied to determine the effective electrical and thermal conductivity, dielectric constant, magnetic permeability, diffusion coefficient associated with flow past fixed obstacles, and the trapping rate associated with diffusion‐controlled reactions among sinks. The simulation method is shown to have a very fast execution time. The technique is illustrated by computing the trapping rate associated with diffusion‐controlled reactions; it is demonstrated to have an execution time that is at least an order of magnitude faster than previous simulation methodologies.
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05.60.-k Transport processes
05.40.-a Fluctuation phenomena, random processes, noise, and Brownian motion
72.10.Bg General formulation of transport theory
02.60.Cb Numerical simulation; solution of equations

Heteroepitaxial growth of ZnSe on (100) Si by low‐pressure organometallic chemical vapor deposition

M. K. Lee, M. Y. Yeh, and C. C. Chang

Appl. Phys. Lett. 55, 1850 (1989); http://dx.doi.org/10.1063/1.102185 (3 pages) | Cited 3 times

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ZnSe epitaxial layers were successfully grown on (100) Si substrates by low‐pressure organometallic chemical vapor deposition. The initial growth rate is not critical. The optimum growth temperature of ZnSe/Si is higher than that of ZnSe/GaAs. From x‐ray and scanning electron microscopy examinations, single crystalline ZnSe epilayers with mirror‐like surfaces can be obtained by a simple growth process. Two‐step growth process is a suitable way to improve the ZnSe/Si quality. It seems to be able to remove the Zn vacancy which is associated with the photoluminescence broad band. The efficient 77 K photoluminescence indicates that the ZnSe epilayers are of good quality.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology
78.55.Et II-VI semiconductors

Photocapacitance spectroscopy of GaAs/AlGaAs multiquantum wells

R. Rosencher, N. Vodjdani, J. Nagle, P. Bois, E. Costard, and S. Delaitre

Appl. Phys. Lett. 55, 1853 (1989); http://dx.doi.org/10.1063/1.102186 (3 pages) | Cited 9 times

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Electron‐hole generation in GaAs/AlGaAs quantum wells by illumination is shown to induce variations in the dynamical capacitance of multiquantum well capacitors. These variations monitored as a function of photon wavelength give a sensitive and unambiguous way to study excitonic resonances. It is shown that this photocapacitance spectroscopy technique leads to quantitative information on the product of the electron‐hole pair density and their electrical polarizability. Assuming a simple theoretical model for electron‐hole electrical polarizability, this method is applied to study the enhancement of exciton lifetime by a perpendicular electric field.
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78.47.-p Spectroscopy of solid state dynamics
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Growth and optical characterization of InAs1−xSbx(0≤x≤1) on GaAs and on GaAs‐coated Si by molecular beam epitaxy

W. Dobbelaere, J. De Boeck, and G. Borghs

Appl. Phys. Lett. 55, 1856 (1989); http://dx.doi.org/10.1063/1.102187 (3 pages) | Cited 21 times

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Epitaxial layers of InAs1−xSbx(0≤x≤1) have been grown on GaAs and on GaAs‐coated Si substrates by molecular beam epitaxy using tetrameric Sb and dimeric As sources. Room‐temperature transmission spectroscopy was used to measure the optical band gap of the InAs1−xSbx layers and the composition was determined by x‐ray wavelength dispersive spectroscopy. We obtained shiny morphology InAs1−xSbx layers on GaAs‐coated Si, comparable to those grown on GaAs. Our results are very encouraging towards the monolithic integration of InAs1−xSbx long‐wavelength infrared detectors with Si charge‐coupled devices.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Calculation of phonon‐assisted tunneling and valley current in a double‐barrier diode

F. Chevoir and B. Vinter

Appl. Phys. Lett. 55, 1859 (1989); http://dx.doi.org/10.1063/1.102188 (3 pages) | Cited 48 times

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We have calculated the longitudinal optical phonon scattering contribution to electron tunneling through a double‐barrier diode. Our model takes into account the delocalization of the incident electron over the whole structure as well as the momentum transfer between electrons and phonons. Our results, obtained without fitting parameters, give considerably improved estimates of the experimentally observed valley current and its dependence on temperature.
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85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.40.Gk Tunneling
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Photoluminescence of GaAs grown dilutely doped with Si by molecular beam epitaxy with modulated source supplies

T. Kamijoh, N. Sugiyama, and Y. Katayama

Appl. Phys. Lett. 55, 1862 (1989); http://dx.doi.org/10.1063/1.102169 (3 pages)

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GaAs layers grown dilutely doped with Si by molecular beam epitaxy (MBE) with modulated‐source supplies have been characterized using low‐temperature photoluminescence. Free‐ and bound‐exciton emissions were observed in the near‐band‐edge region of photoluminescence spectra. A change in the spectral features of impurity‐related emissions was induced by varying the modulation of the Si molecular beam in the MBE growth. It is found that the Si atoms are incorporated as either donors or acceptors, according to the timing of the Si supply during the As‐source supply in MBE growth. We achieved Si doping on addressed sites by varying the timing of the Si supply.
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78.55.Cr III-V semiconductors
73.20.Hb Impurity and defect levels; energy states of adsorbed species
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Highly efficient separate‐confinement PpinN GaAs/AlGaAs waveguide phase modulator

S. S. Lee, Y. S. Kim, R. V. Ramaswamy, and V. S. Sundaram

Appl. Phys. Lett. 55, 1865 (1989); http://dx.doi.org/10.1063/1.102155 (3 pages) | Cited 4 times

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We report a high‐efficiency PpinN GaAs/AlGaAs waveguide phase modulator for high‐speed operations. By introducing p‐ and n‐GaAs layers beside the intrinsic GaAs layer of a P‐i‐N double heterostructure, the absorption edge‐related effect, hardly used in P‐i‐N phase modulators, is utilized. We demonstrate a high phase shift efficiency of 37.5°/V mm at 1.3 μm wavelength. Although this corresponds to the highest expeirmental value reported for reverse‐biased GaAs/AlGaAs phase modulators, our device operates with a low junction and a very low dynamic capacitance.
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42.79.Hp Optical processors, correlators, and modulators
42.79.Gn Optical waveguides and couplers
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
85.30.De Semiconductor-device characterization, design, and modeling

Enhancement of excitonic electrorefraction by optimizing quantum well materials and structures

S. Nojima

Appl. Phys. Lett. 55, 1868 (1989); http://dx.doi.org/10.1063/1.102156 (3 pages) | Cited 4 times

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A method to enhance excitonic electrorefraction in semiconductor quantum wells is proposed, in which the well thickness and the band gap of well materials are optimized so that the figure of merit for electrorefraction is maximized. Application of this method to crossed‐waveguide optical switches using InGaAlAs/InAlAs quantum wells enhances this figure of merit by ten times compared with that of conventional InGaAs/InAlAs quantum wells.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
42.79.Gn Optical waveguides and couplers

Variation of the spacer layer between two resonant tunneling diodes

E. Wolak, B. G. Park, K. L. Lear, and J. S. Harris

Appl. Phys. Lett. 55, 1871 (1989); http://dx.doi.org/10.1063/1.102157 (3 pages) | Cited 8 times

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The effect of changing the length of the spacer layer between two vertically integrated resonant tunneling diodes (RTDs) is experimentally determined. Three different wafers, each containing two RTDs, were grown by molecular beam epitaxy, with spacer layers of 1200, 700, and 200 Å, respectively. A fourth wafer with a single such RTD was grown as a control sample. Two of the control samples wired in series show two current peaks, the temperature dependence of the current‐voltage (I‐V) curves being correctly predicted by a nonlinear load model. The I‐V characteristics of the stacked devices with 1200 and 700 Å quantum wells between the RTDs also show two current peaks, confirming that the bulk of electrons lose longitudinal wave function coherence between the two double‐barrier structures. The first derivative of the I‐V curve for the samples with 700 and 1200 Å spacers displays evidence of quantum interference between the cathode well and the central spacer as a second‐order effect. The first major peak in the structure with a 200 Å spacer between the quantum wells differs from the first peak in the other structures, and the difference is attributed to quantum interference effects.
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85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
73.40.Gk Tunneling
73.20.Hb Impurity and defect levels; energy states of adsorbed species
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Strain in epitaxial CoSi2 films on Si (111) and inference for pseudomorphic growth

Gang Bai, Marc‐A. Nicolet, Thad Vreeland, Q. Ye, and K. L. Wang

Appl. Phys. Lett. 55, 1874 (1989); http://dx.doi.org/10.1063/1.102327 (3 pages) | Cited 11 times

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The perpendicular x‐ray strain of epitaxial CoSi2 films grown on Si(111) substrates at ∼600 °C was measured at temperatures from 24 up to 650 °C. At 600 °C, the perpendicular x‐ray strain is −0.86%, which is about the x‐ray strain that a stress‐free CoSi2 film on Si(111) would have at that temperature. This result shows that the stress in the epitaxial CoSi2 film is fully relaxed at the growth temperature. Strains in the film below the growth temperature are induced by the difference in the thermal expansion coefficient of CoSi2 and Si, αf−αs=0.65×10−5/°C. Within experimental error margins, the strain increases linearly with decreasing temperature at a rate of (1.3±0.1)×10−5/C. The slope of the strain‐temperature dependence, obtained by assuming that the density of misfit dislocations formed at the growth temperature remains unchanged, agrees with the measured slope if the unknown Poisson ratio of CoSi2 is assumed to be νf=1/3. These observations support three rules postulated for epitaxial growth.
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68.60.Bs Mechanical and acoustical properties
68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Band‐edge alignment in heterostructures

Fritz L. Schuermeyer, Paul Cook, Edgar Martinez, and John Tantillo

Appl. Phys. Lett. 55, 1877 (1989); http://dx.doi.org/10.1063/1.102158 (2 pages) | Cited 10 times

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Conduction‐band and valence‐band energies are presented for ternary III‐V compounds in a novel way. These data are used to evaluate new material combinations for heterostructure devices.
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73.20.At Surface states, band structure, electron density of states
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.30.De Semiconductor-device characterization, design, and modeling
85.30.Tv Field effect devices

Molecular beam epitaxial growth of CdTe and HgCdTe on Si (100)

R. Sporken, S. Sivananthan, K. K. Mahavadi, G. Monfroy, M. Boukerche, and J. P. Faurie

Appl. Phys. Lett. 55, 1879 (1989); http://dx.doi.org/10.1063/1.102159 (3 pages) | Cited 63 times

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CdTe has been grown on Si(100) by molecular beam epitaxy. Two orientations can be obtained: (111)B CdTe when the CdTe is deposited directly on the Si(100) substrates, and (100)CdTe when an intermediate layer of ZnTe is grown first. The (111)B oriented layers are made of two domains which are rotated by 90°. A layer with only one domain can be grown on Si(100) misoriented by 8°, but the best misorientation for this purpose still needs to be found. These layers were characterized by reflection high‐energy electron diffraction, photoluminescence spectroscopy, scanning electron microscopy, and x‐ray diffraction. Hg1−xCdxTe has also been grown by molecular beam epitaxy on (111)B CdTe on Si(100).
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology
78.55.Cr III-V semiconductors
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination

Transient and steady‐state excess carrier lifetimes in p‐type HgCdTe

R. Fastow and Y. Nemirovsky

Appl. Phys. Lett. 55, 1882 (1989); http://dx.doi.org/10.1063/1.102160 (3 pages) | Cited 7 times

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The transient and steady‐state excess carrier lifetimes in p‐type Hg0.775Cd0.225Te have been measured as a function of temperature. It is demonstrated that the transient lifetime can be greater than the steady‐state lifetime by as much as a factor of 16 at 77 K. This difference is attributed to minority‐carrier trapping, and explains, in part, the large range of lifetimes which have been reported for this material.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.80.Ey III-V and II-VI semiconductors

Homoepitaxial films grown on Si (100) at 150 °C by remote plasma‐enhanced chemical vapor deposition

L. Breaux, B. Anthony, T. Hsu, S. Banerjee, and A. Tasch

Appl. Phys. Lett. 55, 1885 (1989); http://dx.doi.org/10.1063/1.102161 (3 pages) | Cited 48 times

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Low‐temperature silicon epitaxy is critical for future generation ultralarge scale integrated circuits and silicon‐based heterostructures. Remote plasma‐enhanced chemical vapor deposition has been applied to achieve silicon homoepitaxy at temperatures as low as 150 °C, which is believed to be the lowest temperature reported to date. Critical to the process are an in situ remote plasma hydrogen cleaning of the substrate surface in an ultrahigh vacuum growth chamber prior to epitaxy, and substitution of thermal energy by remote plasma excitation via argon metastables and energetic electrons to dissociate silane and increase adatom mobility on the surface of the silicon substrate. Excellent crystallinity with very few defects such as dislocations and stacking faults is observed.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.65.-b Surface treatments

Electron mobilities exceeding 107 cm2/V s in modulation‐doped GaAs

Loren Pfeiffer, K. W. West, H. L. Stormer, and K. W. Baldwin

Appl. Phys. Lett. 55, 1888 (1989); http://dx.doi.org/10.1063/1.102162 (3 pages) | Cited 163 times

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A modulation‐doped Al0.35Ga0.65As/GaAs single interface structure with a 700 Å undoped setback grown by solid‐source molecular beam epitaxy (MBE) shows a Hall mobility of 11.7×106 cm2/V s at a carrier density of 2.4×1011 electrons/cm2 measured in van der Pauw geometry after exposure to light at 0.35 K. This is the highest carrier mobility ever measured in a semiconductor. Similar Al0.32Ga0.68As/GaAs structures with 1000–2000 Å setbacks show Hall mobilities in the dark at 0.35 K as high as 4.9×106 cm2 /V s for carrier densities of 5.4×1010 electrons/cm2 and lower.
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73.50.Dn Low-field transport and mobility; piezoresistance
73.61.Ey III-V semiconductors
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
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