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6 Nov 1989

Volume 55, Issue 19, pp. 1937-2036

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Role of thermal fluctuations in nondegenerate two‐wave mixing

D. Rogovin, R. McGraw, and A. Gavrielides

Appl. Phys. Lett. 55, 1937 (1989); http://dx.doi.org/10.1063/1.102170 (3 pages) | Cited 6 times

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The influence of thermal fluctuations on nondegenerate two‐wave mixing in the nondepleted pump approximation is examined. For the specific case of an optical Kerr medium the spectrum of both amplitude and phase fluctuations as well as the signal‐to‐noise ratio are obtained. Detailed calculations suggest that a signal‐to‐noise ratio of order unity at argon‐ion wavelengths and room temperatures requires a probe power of 15 μW in the strong signal regime.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Voltage‐controlled Q switching of InGaAs/InP single quantum well lasers

K. Berthold, A. F. J. Levi, T. Tanbun‐Ek, R. A. Logan, and S. N. G. Chu

Appl. Phys. Lett. 55, 1940 (1989); http://dx.doi.org/10.1063/1.102171 (3 pages) | Cited 8 times

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The light emission characteristics of high performance InGaAs/InP single quantum well laser diodes with a monolithically integrated intracavity loss modulator have been investigated. We demonstrate efficient voltage‐controlled tuning of the lasing threshold current over more than one order of magnitude. In addition, active Q switching of 7 mW lasing light power with a change in electrical power of <30 μW is achieved.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Angle tuning characteristics of second‐harmonic generation in KTiOPO4

Tadashi Nishikawa, Naoshi Uesugi, and Hiromasa Ito

Appl. Phys. Lett. 55, 1943 (1989); http://dx.doi.org/10.1063/1.102333 (3 pages) | Cited 3 times

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The angle tuning characteristics of second‐harmonic generation in KTP were experimentally demonstrated using stimulated Raman light in a single‐mode fiber as a fundamental light source. The type II phase‐matching condition for second‐harmonic generation in the y‐z plane can be satisfied over the range 1.06 –1.85 μm by varying the incident angle in the θ direction by 29°. The acceptance angles in the θ direction for type I and type II interactions were also measured. These experimental results agreed well with the theoretical values. It is also found that the effective nonlinear coefficient for type I interaction obtained experimentally is larger than the calculated value from nonlinear coefficients of the crystal.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.20.-e Optical properties of bulk materials and thin films

Wide‐bandwidth, high‐efficiency reflection modulators using an unbalanced Fabry–Perot structure

R. H. Yan, R. J. Simes, and L. A. Coldren

Appl. Phys. Lett. 55, 1946 (1989); http://dx.doi.org/10.1063/1.102172 (3 pages) | Cited 13 times

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A normally‐on electroabsorptive multiple quantum well asymmetric Fabry–Perot reflection modulator with an on/off ratio of 22, insertion loss of 3.7 dB, and optical bandwidth of 3.4 nm for a voltage swing of 11 V has been measured. The trade‐off between low insertion loss and high contrast in such devices will be discussed in the present letter and is shown to be due to the relative placement in wavelength between the Fabry–Perot resonant mode and the heavy hole exciton position in the multiple quantum well active region.
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42.79.Hp Optical processors, correlators, and modulators
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
42.82.-m Integrated optics

Diffraction‐limited operation from monolithically integrated diode laser array and self‐imaging (Talbot) cavity

M. Jansen, J. J. Yang, S. S. Ou, D. Botez, J. Wilcox, and L. Mawst

Appl. Phys. Lett. 55, 1949 (1989); http://dx.doi.org/10.1063/1.102153 (3 pages) | Cited 3 times

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The monolithic integration of a linear array and a separately pumped self‐imaging Talbot cavity has resulted in diffraction‐limited single‐lobe output beams to output powers in excess of 100 mW/facet. A study was made of the device operation as a function of the drive currents applied to the array region and the Talbot cavity.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes

High‐efficiency and narrow‐linewidth operation of a two‐crystal β‐BaB2O4 optical parametric oscillator

W. R. Bosenberg, W. S. Pelouch, and C. L. Tang

Appl. Phys. Lett. 55, 1952 (1989); http://dx.doi.org/10.1063/1.102334 (3 pages) | Cited 45 times

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We report a novel, two‐crystal, walkoff‐compensated optical parametric oscillator design using β‐BaB2O4, which significantly improves the performance of the device. The oscillator is pumped at 354.7 nm and is tunable throughout 0.42–2.3 μm with overall conversion efficiencies as high as 32%. We also report on demonstration of linewidth narrowing in the same β‐BaB2O4 oscillator, obtaining linewidths as narrow as 0.3 Å.
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07.60.-j Optical instruments and equipment
42.79.-e Optical elements, devices, and systems
78.20.-e Optical properties of bulk materials and thin films
42.65.Pc Optical bistability, multistability, and switching, including local field effects

Optical reflectivity measurements using a laser plasma light source

M. L. Bortz and R. H. French

Appl. Phys. Lett. 55, 1955 (1989); http://dx.doi.org/10.1063/1.102335 (3 pages) | Cited 52 times

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Light produced by a laser plasma light source (LPLS) is used to perform optical reflectivity measurements on single crystals from 5 to 40 eV in a single experiment. The intense continuum generated by the rare‐earth plasma allows a significantly higher resolution above 15 eV and extends the measurements to higher energies than those attainable with other laboratory based light sources. This is the first application of a LPLS to vacuum ultraviolet spectroscopy of solids and we demonstrate this capability on two insulating materials, α‐Al2O3 and MgAl2O4.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
71.20.Nr Semiconductor compounds
71.20.Ps Other inorganic compounds
07.60.Rd Visible and ultraviolet spectrometers
78.40.Ha Other nonmetallic inorganics

Lateral interface mixing in GaAs quantum well wire arrays

Takashi Fukui, Hisao Saito, and Yasuhiro Tokura

Appl. Phys. Lett. 55, 1958 (1989); http://dx.doi.org/10.1063/1.102154 (2 pages) | Cited 14 times

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GaAs quantum well wires with an (AlGaAs)1/2(GaAs)1/2 fractional‐layer superlattice(FLS) are fabricated on slightly misoriented (001)GaAs substrates by metalorganic chemical vapor deposition. Transmission electron microscope images show clear contrast for the GaAs quantum wire array, although the lateral heterojunction interface is a little diffusive. Photoluminescences are measured for a quantum well wire array having both FLS and GaAs layers as the well region. From a comparison of measured and calculated photoluminescence energies, the thickness of the lateral interface mixing layer is estimated to be 1–2 nm.
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68.35.Fx Diffusion; interface formation
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
78.55.Cr III-V semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Universal energy dependence of physical and ion‐enhanced chemical etch yields at low ion energy

Christoph Steinbrüchel

Appl. Phys. Lett. 55, 1960 (1989); http://dx.doi.org/10.1063/1.102336 (3 pages) | Cited 137 times

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Physical and ion‐enhanced chemical etch yields are shown to be a linear function of the square root of the ion energy down to the etching threshold for self‐sputtering of metals, sputtering of metals by noble gas ions, sputtering of Si and SiO2 by noble gas and reactive ions, and ion beam enhanced chemical etching of Si. The threshold energy must be taken into account for a quantitative description of etch yields even at intermediate ion energies. The relationship between the dependence of etch yields on ion energy and incident angle is also discussed.
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81.65.-b Surface treatments
81.05.Bx Metals, semimetals, and alloys
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Sequential surface chemical reaction limited growth of high quality Al2O3 dielectrics

G. S. Higashi and C. G. Fleming

Appl. Phys. Lett. 55, 1963 (1989); http://dx.doi.org/10.1063/1.102337 (3 pages) | Cited 78 times

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Sequential surface reactions of trimethylaluminum and water vapor have been used to deposit Al2O3 on Si(100) surfaces. The self‐limiting nature of the surface reactions allows precise control of the thickness of the deposited layers and gives rise to films with highly conformal step coverage. High quality dielectrics have been deposited at temperatures as low as 100 °C. Resistivities of 1017 Ω cm, breakdown strengths of 8×106 V/cm, and interface‐state densities of 1011 states/eV cm2 have already been achieved and they suggest possible applications as a gate insulator or a dielectric passivation layer.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
73.61.Ng Insulators
77.22.Jp Dielectric breakdown and space-charge effects

Monolithic integration of a thin and short metal‐semiconductor‐metal photodetector with a GaAlAs optical inverted rib waveguide on a GaAs semi‐insulating substrate

J. F. Vinchant, J. P. Vilcot, J. L. Lorriaux, and D. Decoster

Appl. Phys. Lett. 55, 1966 (1989); http://dx.doi.org/10.1063/1.102134 (3 pages) | Cited 4 times

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The first fabrication of a thin and short GaAs metal‐semiconductor‐metal photodetector monolithically integrated with a GaAlAs optical inverted rib waveguide on a semi‐insulating GaAs substrate is reported. An only 0.2‐μm‐thick and 100‐μm‐long GaAs absorbing layer is needed to detect 90% of the optical signal at 0.85 μm wavelength. Static, dynamic, and noise measurements have been performed and a bandwidth in excess of 15 GHz is obtained.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
73.40.Sx Metal-semiconductor-metal structures
42.82.-m Integrated optics
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology

Low‐frequency noise measurements on AlGaAs/GaAs resonant tunnel diodes

M. H. Weichold, S. S. Villareal, and R. A. Lux

Appl. Phys. Lett. 55, 1969 (1989); http://dx.doi.org/10.1063/1.102135 (3 pages) | Cited 3 times

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An experimental apparatus and procedure using noise measurement techniques in order to identify conduction mechanisms in resonant tunnel diodes (RTDs) due to defect‐assisted tunneling is developed. The theory of noise measurements is discussed as the basis for the appropriate modeling of RTD noise data. Nonlinear and linear algorithms are developed to model these data and simulation test results are presented. Equipment target specifications are outlined and a functional equipment setup and procedure are also discussed. Sample results of a RTD noise measurement and of a determination of activation energy and capture cross section are presented.
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85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
73.40.Gk Tunneling
73.50.Td Noise processes and phenomena
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Contrast phenomena of band‐band and deep level photoluminescence topographs in annealed semi‐insulating GaAs

H. Ch. Alt, M. Neef, and H. von Philipsborn

Appl. Phys. Lett. 55, 1972 (1989); http://dx.doi.org/10.1063/1.102136 (3 pages) | Cited 5 times

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The effect of wafer annealing on radiative recombination is studied by high‐resolution photoluminescence imaging at room temperature. After long‐time annealing (920 °C for 7 h) remarkable changes of photoluminescence contrast are observed for the EL2‐related as well as for the band‐band emission. The EL2‐related emission at 0.68 eV becomes spatially homogeneous whereas the band‐band recombination shows a complete contrast reversal as compared to the as‐grown condition. It is concluded that after annealing the carrier lifetime is determined by recombination at the EL2 level. In as‐grown material the existence of an additional trap is postulated which is spatially anticorrelated with EL2 and leads to a dominating nonradiative recombination path.
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71.55.Eq III-V semiconductors
78.55.Cr III-V semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
81.40.Tv Optical and dielectric properties related to treatment conditions

Effect of ultraviolet irradiation on the white light degraded electronic properties of hydrogenated amorphous silicon films

Gautam Ganguly, Joydeep Dutta, Swati Ray, and A. K. Barua

Appl. Phys. Lett. 55, 1975 (1989); http://dx.doi.org/10.1063/1.102137 (3 pages) | Cited 5 times

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The electronic properties of hydrogenated amorphous silicon (a‐Si:H) thin films are known to undergo metastable light‐induced changes that can be reversed by annealing at elevated temperatures. We have observed for the first time that annealing of the light‐induced changes in the dark conductivity and photoconductivity of a‐Si:H thin films can also be achieved by ultraviolet (UV) irradiation (wavelength ∼254 nm) of the films at room temperature. It has been shown that the bulk photoconductivity changes in spite of the fact that UV radiation is mostly absorbed near the top surface of the films. A simple explanation of the observed phenomena has been proposed involving a nonequilibrium distribution of phonons generated by absorption of high‐energy photons in the material.
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81.40.Rs Electrical and magnetic properties related to treatment conditions
73.50.Pz Photoconduction and photovoltaic effects
73.20.Fz Weak or Anderson localization
73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Thermal stability of Si/Si1−xGex/Si heterojunction bipolar transistor structures grown by limited reaction processing

D. B. Noble, J. L. Hoyt, J. F. Gibbons, M. P. Scott, S. S. Laderman, S. J. Rosner, and T. I. Kamins

Appl. Phys. Lett. 55, 1978 (1989); http://dx.doi.org/10.1063/1.102138 (3 pages) | Cited 28 times

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The thermal stability of Si/500‐Å‐thick Si0.77Ge0.23 bilayers grown on Si by limited reaction processing is studied as a function of Si capping layer thickness. After annealing for 4 min at 850 °C, misfit dislocation spacings increase monotonically with cap thickness from 0.5 μm for an uncapped film to greater than 50 μm for a layer with a 500‐Å‐thick cap. Thus, an epitaxial Si cap of sufficient thickness prevents significant misfit dislocation formation during this anneal. Experimental observations are reported which indicate that the Si cap enhances thermal stability by inhibiting both dislocation nucleation and propagation. These results are very encouraging since they suggest that high‐temperature processing of Si/Si1−xGex device structures may be possible without significant misfit dislocation formation.
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68.60.Dv Thermal stability; thermal effects
81.65.-b Surface treatments
85.30.Pq Bipolar transistors
68.35.Dv Composition, segregation; defects and impurities

InGaP orange light‐emitting diodes on Si substrates

Susumu Kondo, Haruo Nagai, Yoshio Itoh, and Masafumi Yamaguchi

Appl. Phys. Lett. 55, 1981 (1989); http://dx.doi.org/10.1063/1.102139 (3 pages) | Cited 13 times

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InGaP light‐emitting diodes (LEDs) that operate in the 600 nm region were fabricated on Si substrates using GaAsP/GaAs buffer layers. InGaP layers were grown by metalorganic‐chloride vapor phase epitaxy, and GaAs and GaAsP buffer layers were grown by metalorganic vapor phase epitaxy at atmospheric pressure. An orange color emission was observed under room light at 20 mA dc injection. No degradation was observed in LED characteristics after 2000 h operation at an injection current of 500 A/cm2 despite the high dislocation density of 108 cm−2.
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85.60.Jb Light-emitting devices
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Relaxation and recovery of highly strained InGaAs/GaAs quantum wells

G. L. Price and B. F. Usher

Appl. Phys. Lett. 55, 1984 (1989); http://dx.doi.org/10.1063/1.102140 (3 pages) | Cited 7 times

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The growth of In0.4Ga0.6As on GaAs has been studied with a novel multiquantum well technique which amplifies the sensitivity of reflection high‐energy electron diffraction and x‐ray diffraction sufficiently to determine the quantum well critical thicknesses for very thin layers. The relaxation and recovery of the overlayer for growth between the single heterostructure and quantum well critical were measured and compared with theory.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
61.05.jh Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)
61.05.cp X-ray diffraction

Model of growth of single‐domain GaAs layers on double‐domain Si substrates by molecular beam epitaxy

J. Varrio, H. Asonen, J. Lammasniemi, K. Rakennus, and M. Pessa

Appl. Phys. Lett. 55, 1987 (1989); http://dx.doi.org/10.1063/1.102141 (3 pages) | Cited 14 times

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Growth of single‐domain GaAs (100) layers on double‐domain Si (100) substrates by molecular beam epitaxy has been investigated. It has been shown that domain orientation of the top layer of GaAs depends on the surface structure of a buffer layer. The size of atomic step heights on the Si surface and the As‐Si interaction temperature before film growth are not important factors in controlling domain orientation. Suppression of an antiphase disorder is explained in terms of nonstoichiometric antiphase boundary annihilation operative during growth.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.35.Dv Composition, segregation; defects and impurities

Diffusion of implanted beryllium in n‐ and p‐type GaAs

Michael D. Deal and Heyward G. Robinson

Appl. Phys. Lett. 55, 1990 (1989); http://dx.doi.org/10.1063/1.102142 (3 pages) | Cited 25 times

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The diffusion of ion‐implanted Be in GaAs is studied by comparing the diffusion of implanted Be in undoped GaAs and in GaAs uniformly doped with Zn or Si. The Si‐doped sample exhibits much less Be diffusion compared to the undoped case, while the Zn‐doped sample shows much more Be diffusion. The diffusion in the doped substrate cases can be simulated with a constant Be diffusivity, as opposed to a concentration‐dependent diffusivity in the undoped case. The results are consistent with the substitutional‐interstitial diffusion mechanism, which predicts a diffusivity that is dependent on the net hole concentration.
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66.30.J- Diffusion of impurities
61.72.U- Doping and impurity implantation
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
61.72.jd Vacancies
61.72.jj Interstitials

Dislocation‐accelerated impurity‐induced layer disordering of AlxGa1−xAs‐GaAs quantum well heterostructures grown on GaAs‐on‐Si

W. E. Plano, D. W. Nam, K. C. Hsieh, L. J. Guido, F. A. Kish, A. R. Sugg, N. Holonyak, R. J. Matyi, and H. Shichijo

Appl. Phys. Lett. 55, 1993 (1989); http://dx.doi.org/10.1063/1.102143 (3 pages) | Cited 7 times

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Data are presented showing that dislocations and Si autodiffusion promote accelerated layer disordering of AlxGa1−xAs‐GaAs quantum well heterostructures grown on GaAs‐on‐Si ‘‘substrates’’ via metalorganic chemical vapor deposition. The accelerated impurity‐induced layer disordering is more extreme at higher temperatures (>800 °C) and virtually nonexistent at lower temperatures (≲775 °C).
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68.35.Dv Composition, segregation; defects and impurities
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
66.30.J- Diffusion of impurities
68.35.Fx Diffusion; interface formation

Time‐resolved measurement of tunneling and energy relaxation of hot electrons in GaAs/AlGaAs double quantum well structures

N. Sawaki, R. A. Höpfel, E. Gornik, and H. Kano

Appl. Phys. Lett. 55, 1996 (1989); http://dx.doi.org/10.1063/1.102144 (3 pages) | Cited 33 times

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The tunneling and cooling times of photoexcited hot electrons in AlGaAs/GaAs double (one narrow and the other wide) quantum well structures have been measured using photoluminescence excitation correlation spectroscopy. The tunneling time was of the order of 200 ps for a 60 Å barrier. The tunneling is the indirect process assisted by the emission of optical phonons. The relaxation time of electrons as a function of the kinetic energy shows a threshold for cooling via the emission of optical phonons.
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73.40.Gk Tunneling
78.47.-p Spectroscopy of solid state dynamics
78.55.Cr III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Giant optical nonlinearity due to biexcitons in CuCl

N. Nagasawa, M. Kuwata, E. Hanamura, T. Itoh, and A. Mysyrowicz

Appl. Phys. Lett. 55, 1999 (1989); http://dx.doi.org/10.1063/1.102145 (3 pages) | Cited 11 times

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A lower limit for the value of χ(3) associated with the two‐photon resonance of the Γ1 biexcitons in CuCl at 1.6 K is found to be 5.4×10−5 esu. The upper bound of the two‐photon resonance width is ΔE=0.02 meV. Broadening of the resonance occurs for light intensities I0>103 W/cm2.
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78.20.-e Optical properties of bulk materials and thin films
71.35.-y Excitons and related phenomena
42.70.-a Optical materials
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Tight‐binding analysis on exciton binding energy in field‐induced Stark‐localized superlattices

R. H. Yan, F. Laruelle, and L. A. Coldren

Appl. Phys. Lett. 55, 2002 (1989); http://dx.doi.org/10.1063/1.102146 (3 pages) | Cited 14 times

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We use a variational calculation to study the excitonic behavior in a multiwell system. With several approximations, the exciton binding energy problem is reduced to a simple form, and the exciton binding energy is found to vary quadratically with the electron wave function confinement factor in the well with localized holes. This simple model is applied to explain quantitatively the localized exciton binding energy in a Stark‐localized superlattice. It is found that a 50% electron wave function confinement factor is necessary to provide a strong excitonic effect in a multiwell system.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.20.Jq Electro-optical effects
73.20.Hb Impurity and defect levels; energy states of adsorbed species

Homoepitaxial growth of CoSi2 and NiSi2 on (100) and (110) surfaces at room temperature

R. T. Tung, F. Schrey, and S. M. Yalisove

Appl. Phys. Lett. 55, 2005 (1989); http://dx.doi.org/10.1063/1.102338 (3 pages) | Cited 25 times

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Homoepitaxial growth of NiSi2 and CoSi2 on (100) and (110) surfaces is demonstrated at room temperature. Codeposition of stoichiometric silicide, by molecular beam epitaxy, onto thin, preannealed silicide layers on Si (100) and (110) leads to single‐crystal growth. High quality NiSi2 and CoSi2 films with ion channeling χmin<4% have been fabricated. The epitaxial orientation and the interfacial defect structures of the original silicide templates are maintained in the overgrown silicide. The high temperatures usually required for the formation of NiSi2 and CoSi2 are related to the nucleation and mass transport processes. It is concluded that the reaction of disilicide takes place at room temperature.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.35.Dv Composition, segregation; defects and impurities
68.55.-a Thin film structure and morphology
61.85.+p Channeling phenomena (blocking, energy loss, etc.)

Charged carrier transport in Si1−xGex pseudomorphic alloys matched to Si—strain‐related transport improvements

J. M. Hinckley, V. Sankaran, and J. Singh

Appl. Phys. Lett. 55, 2008 (1989); http://dx.doi.org/10.1063/1.102147 (3 pages) | Cited 17 times

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Charge carrier transport studies are reported for Si1−xGex pseudomorphic alloy layers matched to the (001) Si substrate lattice constant. The effect of biaxial compressive strain on transport is studied by first examining the band structure changes via deformation potential theory and then studying the transport via a generalized Monte Carlo approach. Marked improvements in in‐plane hole transport are obtained while significant improvements also occur in the out‐of‐plane electron transport. These changes are ideally suited for use in n(Si)‐p(Si1−xGex)‐n(Si) heterojunction bipolar transistors.
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72.20.Dp General theory, scattering mechanisms
72.80.Ey III-V and II-VI semiconductors
71.20.Nr Semiconductor compounds
71.20.Ps Other inorganic compounds
85.30.Pq Bipolar transistors
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