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Applied Physics Letters / Volume 55 / Issue 19

Appl. Phys. Lett. 55, 1963 (1989); http://dx.doi.org/10.1063/1.102337 (3 pages)

Sequential surface chemical reaction limited growth of high quality Al2O3 dielectrics

G. S. Higashi and C. G. Fleming

AT&T Bell Laboratories, Murray Hill, New Jersey 07974

(Received 20 July 1989; accepted 5 September 1989)

Sequential surface reactions of trimethylaluminum and water vapor have been used to deposit Al2O3 on Si(100) surfaces. The self‐limiting nature of the surface reactions allows precise control of the thickness of the deposited layers and gives rise to films with highly conformal step coverage. High quality dielectrics have been deposited at temperatures as low as 100 °C. Resistivities of 1017 Ω cm, breakdown strengths of 8×106 V/cm, and interface‐state densities of 1011 states/eV cm2 have already been achieved and they suggest possible applications as a gate insulator or a dielectric passivation layer.

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KEYWORDS and PACS

Keywords

ALUMINIUM OXIDES, SURFACE REACTIONS, FILM GROWTH, THIN FILMS, INTERFACE STATES, BREAKDOWN, ELECTRIC CONDUCTIVITY, EPITAXY, SILICON, VAPOR DEPOSITED COATINGS, PASSIVATION, DIELECTRIC MATERIALS

PACS

  • 81.15.Hi

    Molecular, atomic, ion, and chemical beam epitaxy

  • 82.65.+r

    Surface and interface chemistry; heterogeneous catalysis at surfaces

  • 73.61.Ng

    Insulators

  • 77.22.Jp

    Dielectric breakdown and space-charge effects

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.102337

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

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    References

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