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10 Jul 1989

Volume 55, Issue 2, pp. 91-206

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Laser bilayer etching of GaAs surfaces

P. A. Maki and D. J. Ehrlich

Appl. Phys. Lett. 55, 91 (1989); http://dx.doi.org/10.1063/1.102097 (3 pages) | Cited 26 times

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An excimer‐laser‐stimulated etching technique is described for controlled pulse‐by‐pulse stripping of molecular bilayers from GaAs surfaces. The process is carried out in a molecular beam epitaxy (MBE) system equipped with an auxiliary low‐pressure Cl2 chamber. 193 nm ArF laser light is used to pattern surfaces via projection optical imaging with high processing speed and without exposure to air between etching and MBE steps. A laser stroboscopic method has permitted temporal reaction mapping of the etching mechanisms involved.
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81.65.-b Surface treatments
79.20.Ds Laser-beam impact phenomena

Impurity induced disordered quantum well heterostructure stripe geometry lasers by MeV oxygen implantation

R. P. Bryan, J. J. Coleman, L. M. Miller, M. E. Givens, R. S. Averback, and J. L. Klatt

Appl. Phys. Lett. 55, 94 (1989); http://dx.doi.org/10.1063/1.102098 (3 pages) | Cited 21 times

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Data are presented on stripe geometry AlGaAs‐GaAs graded barrier quantum well heterostructure lasers formed by MeV oxygen implantation and annealing. Low‐dose implants are found to suppress lateral carrier diffusion but do not result in compositional disordering. High‐dose implants form both a semi‐insulating and a compositionally disordered region leading to index‐guided buried‐heterostructure laser operation. However, the concentration of oxygen which spreads laterally under the implantation mask during high‐dose implants is sufficient to partially compensate the stripe region for narrow stripe widths and thereby significantly increases the threshold current.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Gallium phosphide microlenses by mass transport

Z. L. Liau, V. Diadiuk, J. N. Walpole, and D. E. Mull

Appl. Phys. Lett. 55, 97 (1989); http://dx.doi.org/10.1063/1.102099 (3 pages) | Cited 19 times

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Arrays of high quality refractive microlenses have been formed in GaP substrates by mesa etching followed by a heat treatment in which the multistep mesas were smoothed due to surface energy minimization. A smooth lens surface and an accurately controlled lens profile have been obtained. Microlenses of 130 μm diameter and 200 μm focal length have been used to collimate the outputs of GaInAsP/InP and GaAs/GaAlAs diode lasers and have yielded a nearly diffraction‐limited beam divergence of 0.68°.
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42.15.Eq Optical system design
42.79.Bh Lenses, prisms and mirrors
66.30.Fq Self-diffusion in metals, semimetals, and alloys
81.65.-b Surface treatments
42.55.Mv Dye lasers

Electroluminescence from sulfur impurities in a p‐n junction formed in epitaxial silicon

P. L. Bradfield, T. G. Brown, and D. G. Hall

Appl. Phys. Lett. 55, 100 (1989); http://dx.doi.org/10.1063/1.102115 (3 pages) | Cited 22 times

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We characterize the behavior of electroluminescence from a sulfur‐related impurity complex in a p‐n junction formed in epitaxial silicon. The spectrum of the electroluminescence matches that of previously reported photoluminescence from sulfur impurities and persists to ∼150 K. In our structure, we find that the electroluminescence exhibits an external quantum efficiency of 0.2–0.5%.
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78.60.Fi Electroluminescence
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
71.55.Ht Other nonmetals
71.35.-y Excitons and related phenomena

Observation of soliton‐like envelope modulations generated in an anisotropic quartz plate by metallic interdigital transducers

M. Planat and M. Hoummady

Appl. Phys. Lett. 55, 103 (1989); http://dx.doi.org/10.1063/1.102116 (3 pages) | Cited 11 times

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It is observed that the bulk acoustic wave radiation from interdigital transducers deposited on a quartz crystal plate is dispersive and nonlinear. Pulse instability, pulse narrowing, and pulse splitting suggestive of soliton behavior are reported for 25–100 ns duration pulses from a transducer with a 17.2 μm spatial period on a Y‐cut, Z‐propagating quartz substrate.
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43.35.Bf Ultrasonic velocity, dispersion, scattering, diffraction, and attenuation in liquids, liquid crystals, suspensions, and emulsions
62.65.+k Acoustical properties of solids
63.20.-e Phonons in crystal lattices

Universal resputtering curve

W. L. Morgan

Appl. Phys. Lett. 55, 106 (1989); http://dx.doi.org/10.1063/1.102117 (3 pages) | Cited 2 times

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The process of resputtering of material being sputter deposited onto a substrate is investigated via Monte Carlo simulations and simple analytical models. This resputtering comprises contributions from self‐sputtering and from neutralized ions reflected from the target being sputtered. The results of these models are in reasonable agreement with recent measurements over a wide variety of gases and metal targets. When plotted versus a dimensionless mass parameter, the intrinsic resputtered fraction lies on a seemingly universal curve. The reason for this becomes clear through the development of the simple analytical models.
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79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
81.15.Cd Deposition by sputtering

Grain growth and size distribution in ion‐irradiated chemical vapor deposited amorphous silicon

C. Spinella, S. Lombardo, and S. U. Campisano

Appl. Phys. Lett. 55, 109 (1989); http://dx.doi.org/10.1063/1.102118 (3 pages) | Cited 12 times

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The amorphous to polycrystal transition in chemical vapor deposited (CVD) amorphous silicon has been studied at 450 °C under Kr ion beam irradiation. The average grain size increases linearly with the ion dose, and the grain size distribution is very narrow compared to thermally grown grains. These results are consistent with the presence of crystal seeds in CVD material. All these seeds can grow simultaneously under ion beam irradiation. For layers completely preamorphized by Ge+ implantation, no ion beam induced nucleation is observed.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
61.80.Jh Ion radiation effects
68.55.Nq Composition and phase identification

Epitaxial growth of thin films of BaTiO3 using excimer laser ablation

G. M. Davis and M. C. Gower

Appl. Phys. Lett. 55, 112 (1989); http://dx.doi.org/10.1063/1.102393 (3 pages) | Cited 93 times

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Excimer laser ablative sputtering of sintered pellets of BaTiO3 has been used to epitaxially grow thin ∼1‐μm‐thick films of this material of LiF substrates.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Cd Deposition by sputtering
79.20.Ds Laser-beam impact phenomena

Migration‐enhanced epitaxy on a (111)B oriented GaAs substrate

H. Imamoto, F. Sato, K. Imanaka, and M. Shimura

Appl. Phys. Lett. 55, 115 (1989); http://dx.doi.org/10.1063/1.102119 (2 pages) | Cited 13 times

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AlGaAs layers with a featureless specular surface morphology were grown successfully on an exactly (111)B oriented GaAs substrate by migration‐enhanced epitaxy (MEE) even at growth temperatures below 500 °C. We have also observed reflection high‐energy electron diffraction (RHEED) intensity oscillation of AlGaAs on a (111)B oriented substrate by MEE. The single quantum well (SQW) is prepared by MEE on a (111)B and a (100) substrate simultaneously, and the photoluminescence intensity from (111) SQW is shown to be about 50 times higher than that from (100) SQW.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology
68.35.Fx Diffusion; interface formation
78.55.Cr III-V semiconductors

Formation of quasicrystals by mechanical alloying

J. Eckert, L. Schultz, and K. Urban

Appl. Phys. Lett. 55, 117 (1989); http://dx.doi.org/10.1063/1.102394 (3 pages) | Cited 81 times

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Quasi‐crystalline Al65Cu20Mn15 powder has been produced by mechanical alloying from crystalline elemental powders. The alloying process has been monitored by x‐ray diffraction, and the resulting product has been characterized by transmission electron microscopy. The quasi‐crystalline phase forms after about 90 h of milling. The crystallization temperature and enthalpy have been determined by differential scanning calorimetry. The results are compared with data for melt‐spun material.
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64.60.My Metastable phases
81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation
64.70.K- Solid-solid transitions
81.05.Bx Metals, semimetals, and alloys

Lattice site location of europium in LiNbO3 by Rutherford backscattering channeling experiments

L. Rebouta, J. C. Soares, M. F. da Silva, J. A. Sanz‐García, E. Diéguez, and F. Agulló‐López

Appl. Phys. Lett. 55, 120 (1989); http://dx.doi.org/10.1063/1.102395 (2 pages) | Cited 19 times

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The lattice location of Eu3+ in LiNbO3 single crystals has been investigated by Rutherford backscattering channeling techniques. It has been concluded that Eu3+ lies partly at the Nb (64%) and Li (36%) sites but not at the intrinsic vacant site.
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61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
61.85.+p Channeling phenomena (blocking, energy loss, etc.)

Temperature and field dependence of the switching behavior of induced molecular tilt near the smectic A–C∗ transition

Sin‐Doo Lee and J. S. Patel

Appl. Phys. Lett. 55, 122 (1989); http://dx.doi.org/10.1063/1.102120 (3 pages) | Cited 24 times

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A fast electro‐optic switching has been achieved in the smectic A phase of a electroclinic (EC) mixture, based on large EC coupling to the applied electric field. Near the transition from the smectic A to the chiral smectic C∗ phase, we have observed for the first time strong field dependence of the switching time, resulting from nonlinear behavior of the induced molecular tilt. As temperature increases, however, the switching time remains essentially constant. In addition, there is no temperature dependence at sufficiently high fields. A simple‐mean field description is presented to account for the experimental results.
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61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order
61.30.Eb Experimental determinations of smectic, nematic, cholesteric, and other structures
78.20.Jq Electro-optical effects

Depolarization field and ionic effects on the bistability of surface‐stabilized ferroelectric liquid‐crystal devices

K. H. Yang, T. C. Chieu, and S. Osofsky

Appl. Phys. Lett. 55, 125 (1989); http://dx.doi.org/10.1063/1.102121 (3 pages) | Cited 52 times

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Based on a collective switching model coupled to a simplified continuity equation for impurity ions, the internal electric field and light transmission of a surface‐stabilized (SS), layer‐tilted ferroelectric liquid‐crystal (FLC) cell with insulating alignment layers have been calculated as a function of time, under bipolar voltage pulses. The polarization and ionic charges, accumulated on the interfaces between the FLC medium and alignment layers, tend to partially screen the external on‐field and generate a depolarization field to reverse the spontaneous polarization when the external field is off. When the thickness of the alignment layer is greater than 1000 Å, it is difficult to achieve bistability using FLC mixtures with a spontaneous polarization larger than approximately 20 nC/cm2. For bistability to occur in a SSFLC cell with high spontaneous polarization, thin insulating or conducting alignment layers are preferred. We also found that the existence of impurity ions in a SSFLC cell is always detrimental to bistability in spite of their low mobilities (≂10−7 cm2/V s).
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78.20.Jq Electro-optical effects
61.30.Eb Experimental determinations of smectic, nematic, cholesteric, and other structures
85.60.Pg Display systems
78.66.-w Optical properties of specific thin films
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures

Nondestructive multiple breakdown events in very thin SiO2 films

J. Suñé, E. Farrés, I. Placencia, N. Barniol, F. Martín, and X. Aymerich

Appl. Phys. Lett. 55, 128 (1989); http://dx.doi.org/10.1063/1.102396 (3 pages) | Cited 6 times

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Several breakdown events and multilevel current fluctuations have been observed when ultrathin SiO2 films are subjected to constant‐voltage stresses. These breakdown events are sometimes reversible, and consist in a local change of conduction mechanism. This reversibility shows that no catastrophic thermal effects occur, and that the breakdown is only a local switching between two oxide conduction states of very different conductivities.
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77.22.Jp Dielectric breakdown and space-charge effects
77.55.-g Dielectric thin films
73.61.Ng Insulators
77.65.-j Piezoelectricity and electromechanical effects

High doping of phosphorus in Si using gas source molecular beam epitaxy

Hiroyuki Hirayama and Toru Tatsumi

Appl. Phys. Lett. 55, 131 (1989); http://dx.doi.org/10.1063/1.102122 (3 pages) | Cited 18 times

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Phosphorus doping using PH3 in gas source Si molecular beam epitaxy was studied. High phosphorus doping up to 2×1020 cm−3 was successfully achieved. The phosphorus concentration in the epitaxial layer was proportional to the PH3 flow rate. Moreover, selective growth of the phosphorus‐doped layer was possible. The p‐n diode, which consisted of a selectively grown phosphorus‐doped layer, a p−‐Si (100) substrate, and a SiO2 sidewall, showed a normal I‐V characteristic.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
85.30.De Semiconductor-device characterization, design, and modeling
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Electron beam lithography using surface reactions with ClF3

Shinji Matsui

Appl. Phys. Lett. 55, 134 (1989); http://dx.doi.org/10.1063/1.102123 (3 pages) | Cited 4 times

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Direct writing onto poly(methylmethacrylate) (PMMA) resist has been demonstrated by electron beam induced surface reaction using a ClF3 gas source. The electron beam stimulated etched depth for PMMA resist is proportional to the electron dose. Etched depth profile control has been demonstrated by changing doses. A 0.5 μm linewidth pattern has been fabricated at a 2×10−3 C/cm2 dose.
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81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
81.65.-b Surface treatments
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
85.40.Hp Lithography, masks and pattern transfer
79.20.Kz Other electron-impact emission phenomena

Low‐temperature growth of HgTe and HgCdTe using methylallyltelluride

S. K. Ghandhi, I. B. Bhat, H. Ehsani, D. Nucciarone, and G. Miller

Appl. Phys. Lett. 55, 137 (1989); http://dx.doi.org/10.1063/1.102124 (3 pages) | Cited 8 times

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HgTe and HgCdTe (MCT) layers have been grown by organometallic vapor phase epitaxy at low temperature by using methylallyltelluride (MATe), dimethylcadmium (DMCd), and elemental mercury. Use of MATe enabled the growth of layers in the 250–320 °C temperature range, which is 50 °C lower than the growth temperature when diisopropyltelluride is used as the tellurium alkyl, for the same growth rate. The layers were characterized by optical microscopy, double crystal x‐ray diffraction, and Fourier transform infrared spectroscopy. Growth at 320 °C resulted in featureless surfaces for both HgTe and HgCdTe layers. The high quality of HgTe layers grown at 320 °C is demonstrated by the very narrow full width at half maximum of x‐ray diffraction (29 arcsec), which is comparable to that of the CdTeZn substrates used in this study. MCT layers grown at 320 °C showed sharp interference fringes even for very thin layers, indicating the presence of a very sharp interface with the substrate.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology
68.35.B- Structure of clean surfaces (and surface reconstruction)

High‐precision band‐gap determination of Al0.48In0.52As with optical and structural methods

D. Oertel, D. Bimberg, R. K. Bauer, and K. W. Carey

Appl. Phys. Lett. 55, 140 (1989); http://dx.doi.org/10.1063/1.102125 (2 pages) | Cited 33 times

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The band gap of Al0.48In0.52As lattice matched to InP is determined with high precision at 1.5 and 300 K as 1.511 and 1.439 eV, respectively. This determination, which resolves a long lasting dispute on the most fundamental material parameter of this semiconductor, is based on a comparative study of temperature‐dependent photoluminescence, wavelength‐dispersive x‐ray analysis, and triple‐crystal x‐ray diffractometry.
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71.20.Nr Semiconductor compounds
71.20.Ps Other inorganic compounds
78.55.Cr III-V semiconductors
61.05.C- X-ray diffraction and scattering

Control of preferential orientation by in situ plasma supply during growth of polycrystalline silicon films

S. Hasegawa, S. Yamamoto, and Y. Kurata

Appl. Phys. Lett. 55, 142 (1989); http://dx.doi.org/10.1063/1.102126 (3 pages) | Cited 5 times

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Polycrystalline silicon (poly‐Si) films were prepared on a fused quartz substrate at 700 °C by low‐pressure chemical vapor deposition (LPCVD) and plasma‐enhanced CVD (PECVD) using the same fabrication system. Poly‐Si films with a strong 〈100〉 and 〈110〉 preferential orientation (P.O.) are obtained by changing the rf power for generating the plasma under the same preparation condition. The surface of the PECVD films with dominant 〈100〉 and 〈110〉 textures is very smooth in contrast with that of LPCVD films. These textures are maintained after thermal oxidation at 1000 °C, and the degree of P.O. and the grain size increase.
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68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Strong enhancement of the photoluminescence of n‐type indium phosphide under a cathodic polarization

A. Etcheberry, J. Vigneron, J. L. Sculfort, and J. Gautron

Appl. Phys. Lett. 55, 145 (1989); http://dx.doi.org/10.1063/1.102275 (3 pages) | Cited 6 times

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A strong enhancement of the photoluminescence emitted by n‐type indium phosphide (n‐InP), in contact with an aqueous electrolyte, takes place under a cathodic polarization. Neither the dead‐layer model nor a modification of the optical properties of the semiconductor surface can explain such a phenomenon and it is necessary to involve a large variation in the surface recombination velocity. The decrease in this velocity is due to the passivating action of hydrogen which evolves during the reduction of the water.
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78.55.Cr III-V semiconductors
72.80.Ey III-V and II-VI semiconductors
73.40.Mr Semiconductor-electrolyte contacts

Fast anisotropic etching of silicon in an inductively coupled plasma reactor

A. J. Perry and R. W. Boswell

Appl. Phys. Lett. 55, 148 (1989); http://dx.doi.org/10.1063/1.102127 (3 pages) | Cited 61 times

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A 13.56 MHz rf inductively coupled diffusion plasma confined by a weak magnetic field is shown to produce high etch rates and high plasma densities. With a substrate bias of −160 V and 1 mTorr of pure SF6, silicon has been etched anisotropically at a rate of 0.7 μm min−1 with a selectivity to SiO2 of about 5.
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81.65.-b Surface treatments
52.75.-d Plasma devices
52.50.Dg Plasma sources
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Generation of picosecond electrical pulses by a pulse‐forming optoelectronic device

E. Sano, T. Nagatsuma, T. Shibata, and A. Iwata

Appl. Phys. Lett. 55, 151 (1989); http://dx.doi.org/10.1063/1.102128 (2 pages) | Cited 6 times

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Full‐wave analysis demonstrates that a picosecond electrical pulse can be generated by a pulse‐forming optoelectronic device, composed of a photoconductor and an impedance mismatch structure in a coplanar stripline. An electro‐optic sampling system is used to measure the response of the pulse‐forming optoelectronic device, fabricated on a semi‐insulating GaAs substrate. Electrical pulses with 1.3 ps duration (full width at half maximum) are achieved using the device.
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85.60.-q Optoelectronic devices
85.60.Dw Photodiodes; phototransistors; photoresistors

Capture cross section of Si‐SiO2 interface states generated during electron injection

D. Vuillaume, R. Bouchakour, M. Jourdain, and J. C. Bourgoin

Appl. Phys. Lett. 55, 153 (1989); http://dx.doi.org/10.1063/1.102397 (3 pages) | Cited 10 times

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The evolution of the capture cross section of the Si‐SiO2 interface states is analyzed when metal‐oxide‐semiconductor capacitors are stressed by Fowler–Nordheim injection of electrons from the n‐type substrate. The capture cross sections of the energy distribution of the states are measured by a trap filling method using deep level transient spectroscopy. We found that the capture cross sections of near‐midgap states increase by a factor 10, while they remain unchanged for the states localized near the conduction‐band edge. The capture cross sections are temperature dependent and their associated activation energies increase with the stress from 30 to 100 meV. The exponential prefactor in the temperature‐dependence law of the capture cross section is increased from 10−16 to 10−14 cm2 , and we suggest that the Fowler–Nordheim degradation induces new interface states of donor type in the upper part of the silicon band gap.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.20.Hb Impurity and defect levels; energy states of adsorbed species
73.61.Ng Insulators
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Influence of the DX center on the capacitance‐voltage characteristics of δ‐doped GaAs

A. Zrenner

Appl. Phys. Lett. 55, 156 (1989); http://dx.doi.org/10.1063/1.102129 (3 pages) | Cited 13 times

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Capacitance‐voltage (C‐V) profiles are calculated self‐consistently for δ‐doped GaAs(Si) at kT=25 meV. Existing experimental data can only be explained if charge transfer to the DX center, which acts as an electron trap in the conduction band, is included. The depth resolution of C‐V measurements is strongly enhanced when the DX center is occupied.
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71.55.Eq III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.20.Hb Impurity and defect levels; energy states of adsorbed species

Transfer of patterns from the backside of a silicon wafer coated with Si3N4 to its front surface during wet oxidation

W. Boyd Rogers and Hisham Z. Massoud

Appl. Phys. Lett. 55, 159 (1989); http://dx.doi.org/10.1063/1.102398 (3 pages)

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Patterns on the backside of silicon wafers coated with Si3N4 films have been observed on their front surfaces after wet oxidation. This pattern transfer phenomenon is the result of a reduction in the oxidation rate of the front‐surface nitride film over areas where the backside films have been removed. This reduction has been attributed to the influence of the stress in the nitride film on its oxidation rate. In areas where the backside nitride has been removed, localized sample bowing results in stress relief in the front‐surface film and a lower oxidation rate of the nitride film.
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81.65.-b Surface treatments
66.30.Lw Diffusion of other defects
85.40.Hp Lithography, masks and pattern transfer
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