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27 Nov 1989

Volume 55, Issue 22, pp. 2265-2367

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Emission of vacuum ultraviolet radiation from neon excimers excited by a heavy ion beam

W. Krötz, A. Ulrich, B. Busch, G. Ribitzki, and J. Wieser

Appl. Phys. Lett. 55, 2265 (1989); http://dx.doi.org/10.1063/1.102273 (3 pages) | Cited 21 times

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The vacuum ultraviolet emission of neon excited with a pulsed 100 MeV 32S9+ ion beam from the Munich Tandem van de Graaff accelerator was studied at pressures between 1.8 and 96.1 kPa. In the wavelength range between 70 and 110 nm the first, second, and third excimer continua were observed. From time‐ and pressure‐dependent studies of the third continuum emission at a wavelength of 99 nm, rate coefficients k2=(3.6±0.3)×10−13 cm3/s for the bimolecular reaction Ne2++Ne→2Ne+ and k3=(2.84±0.09)×10−31 cm6/s for the termolecular reaction Ne2++2Ne→(Ne2+Ne)2++Ne were determined.
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34.50.Gb Electronic excitation and ionization of molecules
33.20.Ni Vacuum ultraviolet spectra
82.20.Pm Rate constants, reaction cross sections, and activation energies
82.30.Fi Ion-molecule, ion-ion, and charge-transfer reactions

Strained‐layer InGaAs/GaAs/AlGaAs single quantum well lasers with high internal quantum efficiency

Anders Larsson, Jeffrey Cody, and Robert J. Lang

Appl. Phys. Lett. 55, 2268 (1989); http://dx.doi.org/10.1063/1.102034 (3 pages) | Cited 10 times

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Low threshold current density strained‐layer In0.2Ga0.8As/GaAs/AlGaAs single quantum well lasers, emitting at 980 nm, have been grown by molecular beam epitaxy. Contrary to what has been reported for broad‐area lasers with pseudomorphic InGaAs active layers grown by metalorganic chemical vapor deposition, these layers exhibit a high internal quantum efficiency (∼90%). The maximum external differential quantum efficiency is 70%, limited by an anomalously high internal loss possibly caused by a large lateral spreading of the optical mode. In addition, experimental results supporting the theoretically predicted strain‐induced reduction of the valence‐band nonparabolicity and density of states are presented.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.45.+h Stimulated emission

Ion‐milled lenses and lens arrays in yttrium iron garnet‐gadolinium gallium garnet waveguides

T. Q. Vu, C. S. Tsai, D. Young, and C. L. Wang

Appl. Phys. Lett. 55, 2271 (1989); http://dx.doi.org/10.1063/1.102035 (3 pages) | Cited 3 times

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Waveguide lenses have been formed for the first time in yttrium iron garnet‐gadolinium gallium garnet (YIG‐GGG) waveguides by using ion milling. Hybrid‐type single lenses, lens arrays, and collimation‐Fourier‐transform lens pairs fabricated have shown good efficiency and near‐diffraction‐limited focal spot sizes. These waveguide lenses should facilitate realization of magnetostatic wave based integrated magneto‐optic device modules for applications in communications and signal processing.
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42.15.Eq Optical system design
42.79.Bh Lenses, prisms and mirrors
42.79.Gn Optical waveguides and couplers
85.70.Sq Magnetooptical devices
42.82.-m Integrated optics

New shearing interferometer for real‐time characterization of cryogenic laser fusion targets

Hong‐Jin Kong, Mark D. Wittman, and Hyo‐gun Kim

Appl. Phys. Lett. 55, 2274 (1989); http://dx.doi.org/10.1063/1.102036 (3 pages) | Cited 1 time

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Optimum performance of a laser‐driven cryogenic target requires spherical symmetry and uniformity of the deuterium‐tritium (DT) condensate on the interior surface of the fuel capsule. These characteristics are determined, in general, by interferometry. We have developed a shearing interferometer that is free from spherical and chromatic aberration. The detailed structure of the inteferometer is elucidated, and interferograms with a constant phase background and a tilted fringe background are presented.
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52.70.Kz Optical (ultraviolet, visible, infrared) measurements
07.60.Ly Interferometers
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)

Dielectric properties of uniaxial crystals measured with optoelectronically generated microwave transient radiation

Y. Pastol, G. Arjavalingam, G. V. Kopcsay, and J.‐M. Halbout

Appl. Phys. Lett. 55, 2277 (1989); http://dx.doi.org/10.1063/1.102357 (3 pages) | Cited 15 times

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Absorption and dispersion properties of sapphire and crystal quartz between 15 and 130 GHz were measured using the freely propagating transient radiation from optoelectronically pulsed integrated antennas. The polarization sensitivity of the experimental apparatus was characterized and used to obtain the absorption coefficients and refractive indices in the above frequency range for both ordinary and extraordinary beam propagation. We also studied the frequency‐dependent transmission (amplitude and phase) of these two materials as a function of the angle between the electric field and the optic axis.
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07.60.Hv Refractometers and reflectometers
41.20.Jb Electromagnetic wave propagation; radiowave propagation
77.90.+k Other topics in dielectrics, piezoelectrics, and ferroelectrics and their properties (restricted to new topics in section 77)
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Compact directional coupler switches using quantum well electrorefraction

J. E. Zucker, K. L. Jones, M. G. Young, B. I. Miller, and U. Koren

Appl. Phys. Lett. 55, 2280 (1989); http://dx.doi.org/10.1063/1.102037 (3 pages) | Cited 18 times

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We have utilized excitonic electrorefraction in reverse‐biased InGaAsP/InP quantum well heterostructures to produce directional coupler switches with active lengths under 600 μm operating at 1.3 and 1.55 μm wavelengths.
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42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
42.79.Gn Optical waveguides and couplers
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Very low threshold InGaAs/InGaAsP graded index separate confinement heterostructure quantum well lasers grown by atmospheric pressure metalorganic vapor phase epitaxy

T. Tanbun‐Ek, R. A. Logan, H. Temkin, K. Berthold, A. F. J. Levi, and S. N. G. Chu

Appl. Phys. Lett. 55, 2283 (1989); http://dx.doi.org/10.1063/1.102038 (3 pages) | Cited 20 times

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Record low threshold current densities have been achieved in InGaAs/InGaAsP step graded index sep[AV:arate confinement (GRIN SCH) quantum well lasers emitting close to 1.50 μm. Single (SQW) and multiple (MQW) quantum well lasers with 300–500 μm long cavities had threshold current densities as low as 1.9 and 0.9 kA/cm2, respectively. In longer cavity devices, threshold current densities as low as 750 and 450 A/cm2 have been measured in SQW and MQW lasers, respectively. These lasers show no significant change in threshold current density with well thicknesses varying from 5 to 25 nm which demonstrate the effectiveness of the graded index in the carrier capture process. Buried‐heterostructure GRIN SCH SQW and MQW with active layer widths of ∼2 μm show threshold currents of 15 and 9 mA, respectively.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Collisional cooling and ablation product dynamics observed by resonant ionization spectroscopy of nascent carbon monoxide from 193 nm laser ablation of polyimide

P. M. Goodwin and C. E. Otis

Appl. Phys. Lett. 55, 2286 (1989); http://dx.doi.org/10.1063/1.102039 (3 pages) | Cited 14 times

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Rotational and vibrational energy distributions of carbon monoxide, which is liberated during the 193 nm excimer laser ablation of polyimide, have been measured using mass‐resolved resonant multiphoton ionization spectroscopy. Using 150 mJ/cm2 fluence (1000 Å removed per pulse), the rotational temperature is seen to decrease monotonically from 1150 to 650 K from beginning to end of the ablation plume. Additionally, the vibrational temperature is measured to be 3400 K and is constant over time. When using 6 mJ/cm2 to ablate (0.1 Å removed per pulse), the rotational and vibrational temperatures are measured to be 700 and 900 K, respectively. The influence of collisional perturbations and high ablation fluences on the measured rotational and vibrational temperatures is discussed.
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79.20.Ds Laser-beam impact phenomena
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)
82.20.Rp State to state energy transfer

Low spectral modulation high‐power output from a new AlGaAs superluminescent diode/optical amplifier structure

G. A. Alphonse, J. C. Connolly, N. A. Dinkel, S. L. Palfrey, and D. B. Gilbert

Appl. Phys. Lett. 55, 2289 (1989); http://dx.doi.org/10.1063/1.102040 (3 pages) | Cited 1 time

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A double‐heterojunction angled stripe AlGaAs device consisting of an index‐guided ridge waveguide with gain‐guided facet regions has produced cw output powers of 20 mW with less than 1% spectral modulation from a 300‐μm‐long diode. These properties enable these devices to have important use in high‐sensitivity fiber optic gyroscopes and as broadband traveling‐wave optical amplifiers.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.81.Pa Sensors, gyros

Resonant acousto‐optical interaction in superlattices

Jianjun He and Jacques Sapriel

Appl. Phys. Lett. 55, 2292 (1989); http://dx.doi.org/10.1063/1.102041 (3 pages) | Cited 5 times

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The remarkable acousto‐optical properties of superlattices for light wavelength near the condition of the Bragg reflection at the interfaces are reported here for the first time. Because of the assistance of a reciprocal lattice vector in the phase‐matching condition, the collinear coupling between the light and ultrasonic waves becomes possible in the superlattice. At the same time, the diffraction efficiency is strongly increased by an optical resonance effect in the superlattice. Acousto‐optical devices based on semiconductor superlattice structures are proposed, which can be very efficient, rapid, and compact.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
42.79.Fm Reflectors, beam splitters, and deflectors
42.79.Ls Scanners, image intensifiers, and image converters
42.79.Hp Optical processors, correlators, and modulators

Electrical, crystallographic, and optical properties of ArF laser modified diamond surfaces

M. W. Geis, M. Rothschild, R. R. Kunz, R. L. Aggarwal, K. F. Wall, C. D. Parker, K. A. McIntosh, N. N. Efremow, J. J. Zayhowski, D. J. Ehrlich, and J. E. Butler

Appl. Phys. Lett. 55, 2295 (1989); http://dx.doi.org/10.1063/1.102042 (3 pages) | Cited 29 times

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Pulses of 193 nm radiation from an ArF laser with energies exceeding 0.5 J/cm2 have been shown to modify 40–60 nm thick layers of {100} and {110} oriented diamond surfaces. These layers exhibit highly anisotropic electrical and optical properties which have principal in‐plane axes along the 〈110〉 directions. The minimum resistance is (4–10)×10−4 Ω cm, and minimum in the optical transmittance and maximum in the reflectance occur when the electric field vector of the incident polarized light is aligned along the low resistance direction. Transmission electron microscopy indicates that the modified layer primarily consists of unidentified graphite‐like carbon phases embedded in diamond. The first‐order electron diffraction spots correspond to lattice spacings of 0.123, 0.305, and 0.334 nm. The modified layer is stable at 1800 °C, forms ohmic contacts to type IIb diamond, and supports epitaxial diamond growth.
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61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
78.20.-e Optical properties of bulk materials and thin films
72.80.Jc Other crystalline inorganic semiconductors
81.65.-b Surface treatments

Growth of matched metallic ErP0.6As0.4 layers on GaAs in a molecular beam epitaxy system

A. Le Corre, J. Caulet, and A. Guivarc’h

Appl. Phys. Lett. 55, 2298 (1989); http://dx.doi.org/10.1063/1.102043 (3 pages) | Cited 17 times

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Metallic layers of ErP0.6As0.4 have been grown by molecular beam epitaxy on GaAs at 500 °C. The growth has been achieved by adjusting the PH3 and AsH3 flows to obtain a good lattice match to the substrate, the erbium flux remaining below the flux of the V elements. The 10–100 nm thick epitaxial layers reproducibly showed lattice mismatch below 5×10−4 and unlike the ErAs layers, they do not degrade in the atmosphere. Due to its low resistivity (ρ=80 μΩ cm), this compound is an ideal candidate for the realization of epitaxial III‐V semiconductor/metal/III‐V semiconductor heterostructures.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.61.At Metal and metallic alloys
68.55.-a Thin film structure and morphology
73.40.Vz Semiconductor-metal-semiconductor structures

Acceptor‐defect complexes in GaAs studied by perturbed angular correlation spectroscopy

A. Baurichter, M. Deicher, S. Deubler, D. Forkel, H. Plank, H. Wolf, and W. Witthuhn

Appl. Phys. Lett. 55, 2301 (1989); http://dx.doi.org/10.1063/1.102044 (3 pages) | Cited 4 times

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Acceptor‐defect and acceptor‐impurity complexes in GaAs have been studied by perturbed angular correlation spectroscopy. In n‐type GaAs close Cd‐S pairs were formed; the temperature dependence of the related electric field gradient indicates an electrically inactive Cd‐S complex. After a hydrogen plasma exposure of GaAs a distinct Cd‐defect complex has been observed. Similarly, plasma‐induced configurations were also formed in InP and GaP.
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61.72.Bb Theories and models of crystal defects
61.72.U- Doping and impurity implantation
76.80.+y Mössbauer effect; other γ-ray spectroscopy
61.72.Yx Interaction between different crystal defects; gettering effect

Effects of arsenic concentration on the formation of dislocation loops near the projected ion range in high‐dose As+‐implanted (001) Si

S. N. Hsu and L. J. Chen

Appl. Phys. Lett. 55, 2304 (1989); http://dx.doi.org/10.1063/1.102045 (3 pages) | Cited 8 times

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The formation of a two‐layer structure and the inhibition of the formation of dislocation loops near the projected ion range (Rp ) have been observed by cross‐sectional transmission electron microscopy in 80 keV, 1×1016 and 2×1016/cm2 As+‐implanted (001) Si, respectively. The correlations among the arsenic concentration, electrical inactivation of impurity, suppression of the formation of interstitial loops near Rp, and retardation of the epitaxial regrowth rate provide significant insight into the point‐defect migration and agglomeration during solid phase epitaxial regrowth of implantation amorphous silicon.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Np Solid phase epitaxy; growth from solid phases
68.35.Dv Composition, segregation; defects and impurities
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination

Resonant excitonic optical Stark effect in GaSe

C. Hirlimann, J. F. Morhange, M. A. Kanehisa, A. Chevy, and C. H. Brito Cruz

Appl. Phys. Lett. 55, 2307 (1989); http://dx.doi.org/10.1063/1.102046 (3 pages) | Cited 18 times

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The time‐resolved nonlinear transmission of bulk ϵ‐GaSe has been studied in the femtosecond regime when resonantly exciting the material in the vicinity of the exciton at room temperature. Two regimes are evidenced. At early time delay, a blue shift of the exciton with no linewidth broadening can be related to optical Stark effect, while at longer time delay the usual exciton screening and band‐gap renormalization due to real electronic transitions is observed. At resonance, a dependence of the Stark shift with the amplitude of the exciting field is obtained, as predicted by a simple ‘‘dressed‐atom’’ model.
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78.20.Jq Electro-optical effects
71.35.-y Excitons and related phenomena
71.70.Ej Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect

Time‐of‐flight measurement for electron velocity in p‐AlGaAs/GaAs/AlGaAs at a high field

T. Furuta, N. Shigekawa, T. Mizutani, and A. Yoshii

Appl. Phys. Lett. 55, 2310 (1989); http://dx.doi.org/10.1063/1.102047 (3 pages) | Cited 4 times

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Time‐of‐flight measurements using a picosecond pulsed laser are made for a p‐AlGaAs/GaAs/AlGaAs double heterostructure to successfully obtain the velocity‐electric field relationship for photoexcited electrons at room temperature. In the high electric field region, velocity enhancements are observed, which have never been reported until now. Possible mechanisms, which attribute to the velocity enhancement, are also discussed.
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73.50.Fq High-field and nonlinear effects
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.20.Ht High-field and nonlinear effects

Thin stacked oxide/nitride/oxide dielectrics formation by in situ multiple reactive rapid thermal processing

W. Ting, S. N. Lin, and D. L. Kwong

Appl. Phys. Lett. 55, 2313 (1989); http://dx.doi.org/10.1063/1.102359 (3 pages) | Cited 7 times

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Thin stacked SiO2/Si3N4/SiO2 (ONO) films have been fabricated for the first time using in situ multiple step rapid thermal processing chemical vapor deposition (RTP‐CVD). Stacked Si3N4/SiO2 (NO) layers were deposited in situ by RTP‐CVD. Some samples received an in situ rapid thermal oxidation immediately after stacked layer deposition to form oxide/nitride/oxide stacked layers. These films were characterized by ellipsometry, Fourier transform infrared spectroscopy, x‐ray photoelectron spectroscopy, and Auger electron spectroscopy. Results show that well‐defined Si3N4/SiO2 and Six Ny Oz /Si3N4/SiO2 stacked layers have been formed.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
78.66.-w Optical properties of specific thin films
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
77.55.-g Dielectric thin films

Anomalous transient diffusion of boron implanted into preamorphized Si during rapid thermal annealing

Y. M. Kim, G. Q. Lo, D. L. Kwong, H. H. Tseng, and R. Hance

Appl. Phys. Lett. 55, 2316 (1989); http://dx.doi.org/10.1063/1.102048 (3 pages) | Cited 21 times

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Diffusion of boron implanted into preamorphized silicon has been studied using secondary‐ion mass spectroscopy and transmission electron microscopy. A surface preamorphized layer was created by double silicon ion implantation and the as‐implanted boron profiles were confined completely within the preamorphized layer. Results show that boron diffusion during rapid thermal annealing (RTA) is anomalous in nature, and that the magnitude of the anomalous diffusion depends upon the RTA temperature. While RTA at 1150 °C shows an enhanced boron diffusion compared to that in single crystalline samples, a reduced diffusion is observed in preamorphized samples annealed at 1000 °C. Results are discussed in terms of the difference in the defect evolution during RTA.
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66.30.J- Diffusion of impurities
61.72.Bb Theories and models of crystal defects
68.35.Fx Diffusion; interface formation

Nucleation and epitaxial growth of InAs on Si (100) by ion‐assisted deposition

C.‐H. Choi and S. A. Barnett

Appl. Phys. Lett. 55, 2319 (1989); http://dx.doi.org/10.1063/1.102049 (3 pages) | Cited 14 times

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The nucleation mechanism and crystalline perfection of InAs on Si(100) were found to depend strongly on the substrate bias voltage Vs used to accelerate Ar ions to the growing film during triode ion‐assisted deposition. Increasing the Vs value used during the first ∼10 monolayers (ML) of growth from 15 to 30 V decreased the x‐ray diffraction rocking curve full width at half maximum (FWHM) by a factor of ∼2. Further increases in Vs yielded an increase in the FWHM. Reflection high‐energy electron diffraction studies showed that the use of Vs=30 V promoted layer‐by‐layer nucleation. While three‐dimensional islands formed at a critical coverage θcr of 2 – 3 ML for Vs=15 V, increasing Vs to 30 V increased θcr to ∼10 ML. The fact that Vs=30 V both promoted layer‐by‐layer growth and decreased the FWHM suggests that defect generation is dependent upon the nucleation mechanism.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
61.80.-x Physical radiation effects, radiation damage
68.55.-a Thin film structure and morphology
81.15.Jj Ion and electron beam-assisted deposition; ion plating

InGaP/GaAs superlattices grown by gas‐source molecular beam epitaxy

H. Y. Lee, M. D. Crook, M. J. Hafich, J. H. Quigley, G. Y. Robinson, D. Li, and N. Otsuka

Appl. Phys. Lett. 55, 2322 (1989); http://dx.doi.org/10.1063/1.102050 (3 pages) | Cited 5 times

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Lattice‐matched InGaP/GaAs superlattices have been grown by gas‐source molecular beam epitaxy. High‐resolution images obtained with transmission electron microscopy reveal the superlattices to be free of dislocations and to exhibit smooth interfaces of only 1–2 monolayers in width. Double crystal x‐ray diffraction studies indicate that the narrow interfacial regions are locally strained as a result of the growth sequence during gas‐source molecular beam epitaxy.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.60.Bs Mechanical and acoustical properties
68.35.Gy Mechanical properties; surface strains

Reduction of specific contact resistance on GaInAsP by rapid thermal process anneal

B. Kanack, R. L. Carter, A. Appelbaum, and D. Wolf

Appl. Phys. Lett. 55, 2325 (1989); http://dx.doi.org/10.1063/1.102051 (3 pages) | Cited 1 time

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An order of magnitude improvement in the specific contact resistance of gold‐based ohmic contacts to p‐type GaInAsP (Eg=1.13 eV) is reported. A novel technique using a silicon susceptor has been employed in a rapid thermal processor. A direct comparison between gold‐based contacts annealed in a conventional furnace and the rapid thermal processor indicated a specific contact resistance of 4.2×10−5 and 4.1×10−6 Ω cm2, respectively. Auger electron spectroscopy, in depth profile mode, revealed two different metallurgical profiles for the conventional furnace and the rapid thermal processor. The rapid thermal processor was successfully implemented in a p‐i‐n optical detector process resulting in a reduction in the device series resistance and improved performance.
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81.40.Rs Electrical and magnetic properties related to treatment conditions
73.40.Ns Metal-nonmetal contacts
73.40.Cg Contact resistance, contact potential

Relationship between trapped holes, positive ions, and interface states in irradiated Si‐SiO2 structures

P. U. Kenkare and S. A. Lyon

Appl. Phys. Lett. 55, 2328 (1989); http://dx.doi.org/10.1063/1.102358 (3 pages) | Cited 15 times

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We show that trapped holes at the Si‐SiO2 interface account for all of the interface states generated by gate‐positive irradiation of metal‐oxide‐silicon structures. The field‐induced conversion of trapped holes to interface states is found to be the rate‐limiting step in interface state buildup. Interface‐state generation by hole trapping at the Si‐SiO2 interface also plays a role for gate‐negative irradiation. However, our experiments demonstrate an additional avenue for interface‐state formation under these conditions. Holes created in the SiO2 layer are swept to the Al‐SiO2 interface where they release positive ions. The transport of these ions to the Si‐SiO2 interface under gate‐positive field results in new interface states. Our data do not support models involving liberation of protons in the bulk of the SiO2 layer by hole transport through the oxide.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.61.Ng Insulators

Investigation of the electrical degradation of silicon Schottky contacts due to mercury contamination

P. L. Jones and J. W. Corbett

Appl. Phys. Lett. 55, 2331 (1989); http://dx.doi.org/10.1063/1.102052 (2 pages) | Cited 4 times

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A micrographic investigation of the effect of mercury exposure on silicon substrates was conducted. Mercury was found to leave a residue on the silicon surface. A further study was conducted to determine the extent of electrical degradation of Si Schottky contacts due to the presence of a contaminant mercury residue between the metal and the semiconductor. It was concluded that such a layer caused uncertainties in subsequent resistivity measurements, higher capacitance‐voltage (C‐V) barrier heights, and observable leakage currents in current‐voltage (I‐V) plots taken from mercury‐contaminated Si Schottky diodes.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Ns Metal-nonmetal contacts
81.40.Rs Electrical and magnetic properties related to treatment conditions
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

High hole mobility in Si/Si1−xGex/Si p‐type modulation‐doped double heterostructures

P. J. Wang, B. S. Meyerson, F. F. Fang, J. Nocera, and B. Parker

Appl. Phys. Lett. 55, 2333 (1989); http://dx.doi.org/10.1063/1.102274 (3 pages) | Cited 29 times

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High quality Si/Si1−xGex/Si p‐type modulation‐doped double heterostructures with x=0.12 and 0.15 have been grown by the ultrahigh vacuum/chemical vapor deposition technique. Hole mobilities as high as ∼3700 cm2/V s at 14 K have been obtained for heterostructures with x=0.12, at a sheet carrier concentration of ∼8×1011 cm−2. This is the highest hole mobility ever reported for p‐type Si material at these carrier concentrations. The electrical properties of these heterostructures at low temperatures are those expected of a two‐dimensional hole gas at Si/SiGe and SiGe/Si heterointerfaces. The high hole mobility is indicative of excellent interfacial properties. Peak mobilities were observed to depend on the level and proximity of remote B dopant species, as well as the Ge content of the alloyed layers.
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73.50.Dn Low-field transport and mobility; piezoresistance
73.61.Ey III-V semiconductors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Inductive conductance measurements in two‐dimensional superconducting systems

B. Jeanneret, J. L. Gavilano, G. A. Racine, Ch. Leemann, and P. Martinoli

Appl. Phys. Lett. 55, 2336 (1989); http://dx.doi.org/10.1063/1.102053 (3 pages) | Cited 71 times

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A two‐coil mutual‐inductance technique for measuring the complex ac response of a two‐dimensional (2‐D) superconductor to a weak ac magnetic field is described. Analytical and numerical methods are presented which allow extraction of the complex ac conductance of the superconductor from the signal voltage induced in the detection coil by the screening currents flowing in the sample. The method is illustrated by measurements of the ac conductance of a square network of aluminum wires from which the penetration depths of both the network and (granular) aluminum are deduced. It is shown that the method provides a powerful tool to observe characteristic features associated with critical phenomena in 2‐D superconducting systems.
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74.25.N- Response to electromagnetic fields
74.78.-w Superconducting films and low-dimensional structures
07.50.-e Electrical and electronic instruments and components
07.55.-w Magnetic instruments and components
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