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11 Dec 1989

Volume 55, Issue 24, pp. 2473-2560

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Room‐temperature continuous‐wave vertical‐cavity surface‐emitting GaAs injection lasers

K. Tai, R. J. Fischer, C. W. Seabury, N. A. Olsson, T‐C. D. Huo, Y. Ota, and A. Y. Cho

Appl. Phys. Lett. 55, 2473 (1989); http://dx.doi.org/10.1063/1.102002 (3 pages) | Cited 21 times

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Room‐temperature continuous‐wave oscillation with an emission power in excess of 1 mW was achieved in vertical‐cavity surface‐emitting lasers containing a 0.5‐μm‐thick GaAs active layer sandwiched between a distributed Bragg reflector (DBR) and a hybrid metal DBR. The devices have a cw threshold current of 40 mA in 15‐μm‐diam size and a T0 of 115 K. Fiber butt coupling and pseudorandom data modulation of these lasers with open eyes up to 500 Mbit/s were demonstrated.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
78.45.+h Stimulated emission

Ethyldimethylindium for the growth of InGaAs‐GaAs strained‐layer lasers by metalorganic chemical vapor deposition

P. K. York, K. J. Beernink, J. Kim, J. J. Coleman, G. E. Fernández, and C. M. Wayman

Appl. Phys. Lett. 55, 2476 (1989); http://dx.doi.org/10.1063/1.102003 (3 pages) | Cited 15 times

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The growth and characterization of strained In0.25Ga0.75As‐GaAs‐Al0.20Ga0.80As quantum well lasers grown by metalorganic chemical vapor deposition using ethyldimethylindium (EDMIn) are described. A vapor pressure of 0.56 Torr at 11 °C has been extracted from the growth rates of thin InGaAs layers by transmission electron microscopy. Data on reproducibility in quantum well size are presented which indicate long‐term stability in the EDMIn vapor pressure. Laser performance in samples grown with EDMIn is equivalent to, and in some cases better than, those grown with trimethylindium.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Enhanced magneto‐optic Kerr effects in thin magnetic/metallic layered structures

William A. McGahan, Liang‐Yao Chen, Z. S. Shan, D. J. Sellmyer, and John A. Woollam

Appl. Phys. Lett. 55, 2479 (1989); http://dx.doi.org/10.1063/1.102004 (3 pages) | Cited 15 times

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Enhanced Kerr rotation spectra are measured in thin magnetic layers on silver. Also, variable angle of incidence spectroscopic ellipsometry is employed to measure the optical dielectric function of both the thin magnetic layer and the underlying thick silver layer. These results are explained quantitatively using the electromagnetic theory for reflection of light from multiple layers of isotropic and gyrotropic materials.
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78.66.Bz Metals and metallic alloys
75.50.Kj Amorphous and quasicrystalline magnetic materials
42.70.-a Optical materials
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)

Reassessment of the rate constant for electron collision quenching of KrF(B)

Mark J. Kushner, David E. Hanson, and Barry I. Schneider

Appl. Phys. Lett. 55, 2482 (1989); http://dx.doi.org/10.1063/1.102005 (3 pages) | Cited 2 times

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The rate constant for electron collision quenching of KrF(B) has been reassessed by analyzing previous theoretical [A. Hazi, T. Rescigno, and A. Orel, Appl. Phys. Lett. 35, 477 (1979)] and experimental [D. Trainor and J. Jacob, Appl. Phys. Lett. 37, 675 (1980)] data. From this analysis we recommend that the rate constant for electron collision quenching of KrF(B), used for modeling electron beam and discharge excited lasers, should be 3–6×10−8 cm3 s−1.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
34.80.Gs Molecular excitation and ionization

Characterization of cladded glass fibers using acoustic microscopy

C. K. Jen, C. Neron, J. F. Bussiere, L. Li, R. Lowe, and J. Kushibiki

Appl. Phys. Lett. 55, 2485 (1989); http://dx.doi.org/10.1063/1.102006 (3 pages) | Cited 4 times

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Spatial distribution profiles of leaky surface acoustic wave velocity (VLSAW ) and attenuation across the diameters of cladded glass fibers are presented. The profiles are obtained by using a novel V(x,z) analysis with a reflection scanning acoustic microscope operated at 775 MHz, and are compared with optical refractive index profiles. Optical fibers with different dopants and dopant concentrations have been investigated. The role of acoustic property profiles in the design of optical and acoustic fibers is outlined.
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43.35.Sx Acoustooptical effects, optoacoustics, acoustical visualization, acoustical microscopy, and acoustical holography
43.35.Pt Surface waves in solids and liquids
43.35.Yb Ultrasonic instrumentation and measurement techniques
43.35.Cg Ultrasonic velocity, dispersion, scattering, diffraction, and attenuation in solids; elastic constants

Etch rate enhancement of photoresist in nitrogen‐containing plasmas

V. Premachandran

Appl. Phys. Lett. 55, 2488 (1989); http://dx.doi.org/10.1063/1.102007 (3 pages) | Cited 11 times

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It is shown that the etch rate of photoresist can be greatly enhanced by adding 1% of nitrogen into the oxygen plasma. An increase in the atomic oxygen concentration is shown to be responsible for this enhancement in the etch rate. A further enhancement in the etch rate is obtained by introducing CF4 into the O2 ‐N2 plasma. The enhancement in the etch rate of photoresist in the CF4 ‐N2 ‐O2 mixture is the result of an increase in the atomic concentrations of oxygen and fluorine in the plasma.
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81.65.-b Surface treatments
85.40.Hp Lithography, masks and pattern transfer
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Determination of tilted superlattice structure by atomic force microscopy

S. A. Chalmers, A. C. Gossard, A. L. Weisenhorn, S. A. C. Gould, B. Drake, and P. K. Hansma

Appl. Phys. Lett. 55, 2491 (1989); http://dx.doi.org/10.1063/1.102008 (3 pages) | Cited 25 times

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We have analyzed the structure of tilted superlattices on atomically stepped surfaces by using atomic force microscopy to detect ridges of GaAs formed by the selective oxidation and removal of intervening AlAs regions. Oxides were removed in a liquid cell of the atomic force microscope while scanning. We have demonstrated plan views which reveal the superlattice length and width uniformity, but the method is also in principle suited for cross‐sectional samples.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
68.55.-a Thin film structure and morphology
81.65.-b Surface treatments

Radiation‐induced formation of cavities in amorphous germanium

L. M. Wang and R. C. Birtcher

Appl. Phys. Lett. 55, 2494 (1989); http://dx.doi.org/10.1063/1.102009 (3 pages) | Cited 27 times

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Prethinned polycrystalline Ge TEM samples were irradiated with 1.5 MeV Kr+ ions at room temperature while structural and morphological changes were observed in situ in the Argonne High Voltage Electron Microscope‐Tandem Facility. After a Kr+ dose of 1.2×1014 ions/cm2, the irradiated Ge was completely amorphized. A high density of small void‐like cavities was observed after a Kr+ dose of 7×1014 ions/cm2. With increasing Kr+ ion dose, these cavities grew into large holes transforming the irradiated Ge into a sponge‐like porous material after 8.5×1015 ions/cm2. The radiation‐induced nucleation of void‐like cavities in amorphous material is astonishing, and the final structure of the irradiated Ge with enormous surface area may have potential applications.
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61.80.Jh Ion radiation effects
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
61.43.Fs Glasses
61.43.-j Disordered solids
61.72.Bb Theories and models of crystal defects

Au‐Ag ion mixing rate—disagreement with theory resolved

P. Børgesen, D. A. Lilienfeld, and H. H. Johnson

Appl. Phys. Lett. 55, 2497 (1989); http://dx.doi.org/10.1063/1.102010 (3 pages) | Cited 6 times

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Measurements of the low‐temperature mixing of several 5d–4d bilayers by 600 keV Xe ions have strongly supported the assumption of a thermal spike mechanism. Quite disturbingly, however, the Au‐Ag mixing rate appeared to exceed theoretical predictions by about a factor of 3. A closer examination of this system shows the discrepancy to be caused by the formation of a strongly nonuniform Au surface structure during irradiation. An improved value for the mixing rate is in reasonable agreement with predictions.
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61.80.Jh Ion radiation effects
66.30.J- Diffusion of impurities
68.35.Fx Diffusion; interface formation
68.35.B- Structure of clean surfaces (and surface reconstruction)

Interface atomic structure of Si/SiO2/Si formed by molecular beam deposition

Akira Sakai, Toru Tatsumi, Taeko Niino, Hiroyuki Hirayama, and Koichi Ishida

Appl. Phys. Lett. 55, 2500 (1989); http://dx.doi.org/10.1063/1.102298 (3 pages) | Cited 2 times

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The interface structures of SiOx/Si and Si/SiOx/Si (x≂2) formed by molecular beam deposition (MBD) were examined by high‐resolution transmission electron microscopy. The MBD SiO2/Si buffer layer interface was atomically flat in both samples. On the other hand, the Si overlayer/MBD SiO2 layer interface had a rough configuration. In the Si/SiO2/Si sample with a 7.5‐Å‐thick SiO2 buried layer, the polycrystalline Si overlayer was separated from the Si buffer layer by the thin SiO2 layer. A 2.5 Å reduction of the SiO2 buried layer thickness to 5.0 Å led to the epitaxial growth of the Si overlayer. In this sample, the SiO2 layer formed island morphology and epitaxial information was given to the overlayer through the exposed surface of the buffer layer. The epitaxial growth mechanism of the Si overlayer was also discussed.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

New model for damage accumulation in Si during self‐ion irradiation

O. W. Holland, S. J. Pennycook, and Gerald L. Albert

Appl. Phys. Lett. 55, 2503 (1989); http://dx.doi.org/10.1063/1.102011 (3 pages) | Cited 54 times

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The dependence of the damage produced by self‐ion implantation in Si on dose is determined and is shown to exhibit two distinct behaviors: an initial sublinear increase of damage with dose, followed by a period of greatly accelerated growth. Ion backscattering analysis using both single‐ and double‐alignment channeling measurements is used to determine the distribution of damage in the samples. The nature of the damage is determined from its thermal annealing behavior and differences in the spectra recorded in the two channeling configurations. Damage is found to consist predominantly of two components: simple defects, such as divacancies, and regions of amorphous Si. The behavior of these components is shown to be divergent at the fluence which separates the two different growth regimes. A model is proposed which considers the amorphization process in Si as a critical‐point phenomenon, one in which the onset of amorphization leads to a cooperative behavior among the various types of damage resulting in a greatly accelerated transition.
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61.80.Jh Ion radiation effects
61.72.Bb Theories and models of crystal defects
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
61.72.uf Ge and Si

Electrically controlled surface bistability in nematic liquid crystals

R. Barberi, M. Boix, and G. Durand

Appl. Phys. Lett. 55, 2506 (1989); http://dx.doi.org/10.1063/1.102012 (3 pages) | Cited 28 times

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The use of obliquely SiO evaporated glass plates at grazing incidence and controlled thickness gives a surface twofold degenerate oblique orientation for the nematic liquid‐crystal MBBA (p‐methoxy‐benzylidine‐p‐n‐butyl‐aniline). Using a horizontal electric field and the linear flexoelectric coupling, one can switch the surface state from the first orientation to the other one, above a threshold value for the electric field. This represents the first example of an electrically controlled surface bistability in nematic liquid crystals.
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61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order
68.03.-g Gas-liquid and vacuum-liquid interfaces
68.05.-n Liquid-liquid interfaces

High‐resolution electron microscopy of the GaAs/AlGaAs heterointerface with (200) and transmitted beams

Nobuyuki Ikarashi, Akira Sakai, Toshio Baba, and Koichi Ishida

Appl. Phys. Lett. 55, 2509 (1989); http://dx.doi.org/10.1063/1.102013 (3 pages) | Cited 7 times

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In 〈100〉 cross‐sectional high‐resolution electron microscopy of the GaAs/AlAs heterointerface, images were formed only with chemically sensitive (200) and transmitted beams. The atomic configuration of the GaAs/AlAs interface can be characterized by the variation of (200) fringes at atomic resolutions. The large difference in the (200) fringe intensity between GaAs and AlAs layers greatly improves the visibility at the interface and relaxed the restriction on sample thickness. It is also shown that this technique is effective in observing the heterointerface of close compositions such as GaAs/AlGaAs.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
68.55.-a Thin film structure and morphology

Photothermal deflection spectroscopy of heat‐treated GaAs, InP, and InGaAsP alloys

A. Shailendra Kumar, K. L. Narasimhan, R. Rajalakshmi, S. S. Chandvankar, and B. M. Arora

Appl. Phys. Lett. 55, 2512 (1989); http://dx.doi.org/10.1063/1.102014 (2 pages) | Cited 1 time

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Photothermal deflection spectroscopy is used to study the effect of heat treatment in bulk GaAs, InP, and epitaxial InGaAsP grown on InP. We show that increased sub‐band‐gap absorption is related to damage near the surface. We also show that from a measurement of the phase we can differentiate between purely surface and near‐surface damage.
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81.40.-z Treatment of materials and its effects on microstructure, nanostructure, and properties
68.35.B- Structure of clean surfaces (and surface reconstruction)
81.65.-b Surface treatments
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors

Growth of InGaAs in a hot‐walled vapor phase epitaxy reactor using a trimethylarsenic source

D. N. Buckley

Appl. Phys. Lett. 55, 2514 (1989); http://dx.doi.org/10.1063/1.101993 (3 pages) | Cited 3 times

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Trimethylarsenic was used as a group V source in a hot‐walled vapor phase epitaxy (VPE) reactor. High quality InGaAs was grown. Samples with no intentional doping were n type with a background carrier concentration of 6×1015 cm−3, about three times higher than that of comparison samples grown using arsine. Mobilities measured at 77 and 300 K, respectively, were similar to those measured for corresponding samples grown using arsine, suggesting that, in contrast with metalorganic chemical vapor deposition using trimethylarsenic, no significant carbon incorporation occurred. It is concluded that the prognosis is good for the replacement of arsine in hot‐walled VPE reactors by an arsenic alkyl such as trimethylarsenic.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.61.Ey III-V semiconductors
73.50.Dn Low-field transport and mobility; piezoresistance

Γ‐ and X‐band contributions to nonresonant tunneling in GaAs/Al0.35Ga0.65As double quantum wells

M. G. W. Alexander, M. Nido, K. Reimann, W. W. Rühle, and K. Köhler

Appl. Phys. Lett. 55, 2517 (1989); http://dx.doi.org/10.1063/1.101994 (3 pages) | Cited 10 times

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Time‐resolved photoluminescence in the picosecond regime is performed on an asymmetric GaAs/Al0.35Ga0.65As double quantum well structure with a barrier thickness of 6 nm to obtain the Γ‐ and X‐point barrier contributions to nonresonant tunneling. Application of hydrostatic pressure up to 37 kbar at 5 K reveals that tunneling via virtual X states is at least 800 times less efficient than via virtual Γ states. Above 24.5 kbar an extremely fast scattering of electrons out of the n=1 quantized level of the narrower quantum well is observed.
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73.40.Gk Tunneling
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
78.47.-p Spectroscopy of solid state dynamics

Ge segregation at Si/Si1−xGex interfaces grown by molecular beam epitaxy

P. C. Zalm, G. F. A. van de Walle, D. J. Gravesteijn, and A. A. van Gorkum

Appl. Phys. Lett. 55, 2520 (1989); http://dx.doi.org/10.1063/1.101995 (3 pages) | Cited 67 times

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The interface quality of Si/Si1−xGex (0.08≤x≤0.33) interfaces grown by molecular beam epitaxy has been studied by means of secondary‐ion mass spectrometry. Ge segregation occurs into the Si capping layers. The segregation is characterized by a 17 nm/dec slope; the total amount of segregated Ge corresponds to a few tenths of a monolayer. The phenomenon is independent of the Ge fraction and does not depend on temperature as long as crystal growth is perfect. A possible explanation is given in terms of a Ge adlayer that is formed during growth as a result of site exchange between subsurface Ge and surface Si atoms. This adlayer is incorporated slowly during further Si growth. The Ge segregation can be suppressed by having an adlayer of Ga on the surface of the growing structure.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.35.Dv Composition, segregation; defects and impurities
68.35.Fx Diffusion; interface formation
66.30.J- Diffusion of impurities

Electrical activation curve of silicon implanted in GaAs

Richard A. Morrow

Appl. Phys. Lett. 55, 2523 (1989); http://dx.doi.org/10.1063/1.101996 (3 pages) | Cited 8 times

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A model describing the electrical activation of silicon implanted in semi‐insulating GaAs is fit to carrier concentration versus silicon concentration data spanning over three decades. The model incorporates the reactions of silicon with boron and EL2 present in the substrate.
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71.55.Eq III-V semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.80.Ey III-V and II-VI semiconductors
61.72.U- Doping and impurity implantation

Comparison of quantum‐confined Stark effect in interdiffused and abrupt GaAs/AlGaAs quantum wells

H. Ribot, F. Laruelle, and L. A. Coldren

Appl. Phys. Lett. 55, 2526 (1989); http://dx.doi.org/10.1063/1.101971 (3 pages) | Cited 2 times

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Photocurrent measurements at room temperature have been carried out on thermally interdiffused GaAs/AlGaAs multiple quantum well structures. Although quite comparable, the Stark shift (quantum‐confined Stark effect) in the disordered well is smaller than in the as‐grown well. These measurements are consistent with calculations of the electron–heavy hole displacement versus electric field for infinite and square well models for the as‐grown well, as well as parabolic and error function well models for the disordered well. We observe that this displacement increases faster for the wells with graded barriers which fit the experimental disordered well. Consequently, the exciton binding energy is smaller, which is consistent with the reduction of the Stark shift revealed by the photocurrent measurements.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.35.Dv Composition, segregation; defects and impurities

Quasi‐ballistic resonant tunneling of minority electrons into the excited states of a quantum well

A. S. Vengurlekar, F. Capasso, S. Sen, A. L. Hutchinson, S. N. G. Chu, D. Sivco, and A. Y. Cho

Appl. Phys. Lett. 55, 2529 (1989); http://dx.doi.org/10.1063/1.101972 (3 pages) | Cited 4 times

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Observation of energy‐dependent transmission of nonequilibrium minority electrons through a symmetric double‐barrier (DB) quantum well heterostructure is reported. The DB is placed in the base of a GaInAs/AlInAs bipolar transistor. The electrons are launched into the DB with variable kinetic energies using a tunnel barrier in the emitter and varying the emitter‐base voltage. The resulting peak in the collector current provides for the first time evidence of quasi‐ballistic resonant tunneling of minority carriers into the eigenstates of a quantum well. The small peak‐to‐valley ratio and the broad peak also demonstrate the importance of scattering and of the anisotropy in momentum space of the incident distribution function in the region between the ballistic electron launcher and the DB.
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73.40.Gk Tunneling
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.30.Pq Bipolar transistors
79.60.Dp Adsorbed layers and thin films
79.70.+q Field emission, ionization, evaporation, and desorption

GaAs p‐i‐n photodiodes made by metalorganic chemical vapor deposition using tertiarybutylarsine and arsine

H. B. Serreze, J. A. Baumann, L. Bunz, R. Schachter, and R. D. Esman

Appl. Phys. Lett. 55, 2532 (1989); http://dx.doi.org/10.1063/1.101973 (3 pages) | Cited 13 times

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High‐speed, 80‐μm‐diam, GaAs/Alx Ga1−x As p‐i‐n photodiodes having frequency response in excess of 7 GHz and internal quantum efficiency approaching 100% were fabricated by low‐pressure metalorganic chemical vapor deposition (MOCVD) using both tertiarybutylarsine (TBA) and arsine. These are the highest performance MOCVD GaAs devices achieved with nonarsine sources and comparable to the best reported p‐i‐n photodiodes of similar size. Net carrier concentration of the undoped TBA GaAs was determined by capacitance‐voltage analysis to be less than 5×1014 cm−3 . Photoluminescence measurements indicate that undoped TBA‐grown Alx Ga1−x As (x=0.25) is also of excellent quality (FWHM=12 meV). Growth conditions leading to optimized devices were found to be similar for the two sources.
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85.60.Dw Photodiodes; phototransistors; photoresistors
85.30.De Semiconductor-device characterization, design, and modeling
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Homogeneous width of exciton absorption spectra in CuCl microcrystals

Yasuaki Masumoto, Tetsuro Wamura, and Atsushi Iwaki

Appl. Phys. Lett. 55, 2535 (1989); http://dx.doi.org/10.1063/1.102271 (3 pages) | Cited 20 times

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The homogeneous width of Z3 exciton absorption spectra in CuCl microcrystals was measured for the first time. It was determined to be 0.18+0.03−0.05 meV at 77 K by laser saturation spectroscopy. The temperature dependence of the Z3 exciton absorption linewidth also supported the result. The measurements of the saturation power density, the homogeneous linewidth, and the lifetime of Z3 excitons informed us of the transition dipole moment for a CuCl microcrystal. The obtained transition dipole moment for a CuCl microcrystal is about 13 times that for a unit cell in bulk CuCl.
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71.35.-y Excitons and related phenomena
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.40.Ha Other nonmetallic inorganics
78.47.-p Spectroscopy of solid state dynamics

Initial stages of growth of GaAs on silicon (211) substrates by migration‐enhanced molecular beam epitaxy

L. Fotiadis and R. Kaplan

Appl. Phys. Lett. 55, 2538 (1989); http://dx.doi.org/10.1063/1.101974 (3 pages) | Cited 4 times

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The nucleation of GaAs films grown by the alternate deposition of gallium and arsenic monolayers on Si(211) and (100) substrates has been studied in situ using Auger and energy‐loss spectroscopies, and low‐energy electron diffraction. Films were observed to become continuous at much smaller thicknesses when grown on (211), as compared to (100), substrates. This implies that the nucleation site density is much greater on the (211) surface, as expected from the very high step density for this orientation. The observed growth was consistent with a layer‐by‐layer growth mode.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.35.Fx Diffusion; interface formation
68.55.-a Thin film structure and morphology

Identification of hole transitions at the neutral interstitial manganese center in silicon

T. Bever, P. Emanuelsson, M. Kleverman, and H. G. Grimmeiss

Appl. Phys. Lett. 55, 2541 (1989); http://dx.doi.org/10.1063/1.101975 (3 pages) | Cited 4 times

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The observation of a sharp line transmission spectrum in Mn‐doped silicon is reported. Isochronal annealing behavior of both the line spectrum and the interstitial Mn center as determined by electron paramagnetic resonance is shown to be in excellent agreement. The temperature dependence of the spectrum is explained by the population of a local phonon mode in the initial state of the transitions. The spectrum is tentatively assigned to bound‐to‐bound hole transitions at the neutral interstitial Mn center.
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71.55.Ht Other nonmetals
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
76.30.Fc Iron group (3d) ions and impurities (Ti-Cu)
61.72.jd Vacancies
61.72.jj Interstitials

Conformal vapor phase epitaxy

D. Pribat, L. Karapiperis, and C. Collet

Appl. Phys. Lett. 55, 2544 (1989); http://dx.doi.org/10.1063/1.101976 (3 pages) | Cited 5 times

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A novel technique of shaped crystal growth from the vapor is presented, which we call conformal vapor phase epitaxy. Using selective epitaxy as a main ingredient, we have obtained a conformal Si single‐crystal growth between two SiO2 films. Since vertical growth is physically impeded by a SiO2 cap, lateral to vertical growth ratios (overgrowth ratios) can be controlled at will. Using a standard chemical vapor deposition reactor, submicron thick (100)Si layers have been laterally grown with a totally controlled overgrowth ratio >20.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
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