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11 Dec 1989

Volume 55, Issue 24, pp. 2473-2560

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Fermi level movement for n‐ and p‐GaAs interfaces: Effects of temperature and dopant concentration

Steven G. Anderson, C. M. Aldao, G. D. Waddill, I. M. Vitomirov, C. Capasso, and J. H. Weaver

Appl. Phys. Lett. 55, 2547 (1989); http://dx.doi.org/10.1063/1.101977 (3 pages) | Cited 5 times

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Photoemission studies demonstrate that temperature and dopant concentration dependent movement of the surface Fermi level is controlled by coupling between adatom‐induced and bulk states. At a low temperature for lightly doped n‐ or p‐GaAs, initial band bending inhibits tunneling and EF remains near the band edges until the onset of metallicity. For heavy doping, greater band bending reflects a thinner depletion region. Thermal cycling for 20≤T≤300 K for low coverages demonstrates that band bending is reversible.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.20.Hb Impurity and defect levels; energy states of adsorbed species
79.60.Jv Interfaces; heterostructures; nanostructures
73.40.Ns Metal-nonmetal contacts

Evaluation of AlOx barrier thickness in Nb Josephson junctions using anodization profiles

Takeshi Imamura and Shinya Hasuo

Appl. Phys. Lett. 55, 2550 (1989); http://dx.doi.org/10.1063/1.101978 (3 pages) | Cited 3 times

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Using anodization profiles, we have analyzed the thin AlOxAl tunneling barrier in a Nb/AlOxAl/Nb Josephson junction. We measured the voltage width at the AlOxAl barrier in the profiles and found that it is closely related to the AlOxAl thickness. We proposed a way to evaluate this thickness from the voltage width. The anodization profile is useful in diagnosing the 4.2 K critical current density of Josephson junctions even at room temperature.
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85.25.Cp Josephson devices
74.50.+r Tunneling phenomena; Josephson effects
73.40.Gk Tunneling
73.40.Rw Metal-insulator-metal structures

Magnetic microstructure of the (0001) surface of hcp cobalt

J. Unguris, M. R. Scheinfein, R. J. Celotta, and D. T. Pierce

Appl. Phys. Lett. 55, 2553 (1989); http://dx.doi.org/10.1063/1.101979 (3 pages) | Cited 22 times

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The magnetic domain structure of the (0001) surface of a hcp cobalt crystal was investigated using scanning electron microscopy with polarization analysis (SEMPA). This is the first observation by SEMPA of both out‐of‐plane and in‐plane magnetization components. The perpendicular magnetization imaged with SEMPA showed a branched structure very similar to that previously observed by magneto‐optic Kerr microscopy. In addition, a previously unobserved in‐plane magnetic substructure was measured. The in‐plane magnetization is divided into well‐defined submicron domains that appear to reflect the sixfold symmetry of the crystal surface.
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75.60.Ch Domain walls and domain structure
75.70.Rf Surface magnetism
75.50.Cc Other ferromagnetic metals and alloys

Scaling law for temporal dispersion of a short electron pulse across a diode in space‐charge regime

C. Girardeau‐Montaut, J. P. Girardeau‐Montaut, and H. Leboutet

Appl. Phys. Lett. 55, 2556 (1989); http://dx.doi.org/10.1063/1.101980 (3 pages) | Cited 16 times

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The space‐charge phenomenon in the diode of a photoinjector induces simultaneously temporal and spatial dispersions of the electrons burst in pulsed regime. They are higher when the initial pulse duration is shortened. Here, we present the results of temporal dispersion obtained by computer simulation and we give a simple scaling law accounting for it. This law can be used to compare durations of electron pulses at the cathode and anode in any well‐defined operation set, in space‐charge regime.
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41.75.Fr Electron and positron beams
84.47.+w Vacuum tubes

New x‐ray source for lithography

P. Sprangle, B. Hafizi, and F. Mako

Appl. Phys. Lett. 55, 2559 (1989); http://dx.doi.org/10.1063/1.101981 (2 pages) | Cited 9 times

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We propose the use of electromagnetic waves as an undulator in order to generate x rays in the wavelength range required for fabrication of integrated circuits. The configuration consists of a quasi‐optical maser cavity through which a beam of relativistic electrons is made to propagate, spontaneously emitting x rays of the desired energy. The scaling of the x‐ray power with wavelength indicates that the throughput can be increased by using resists which are sensitive to shorter wavelength x rays.
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85.40.Hp Lithography, masks and pattern transfer
81.65.-b Surface treatments
07.85.-m X- and γ-ray instruments
41.60.-m Radiation by moving charges
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