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18 Dec 1989

Volume 55, Issue 25, pp. 2573-2675

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Pumping wavelength dependence on gain factor of a 0.98 μm pumped Er3+ fiber amplifier

Kazunori Suzuki, Yasuo Kimura, and Masataka Nakazawa

Appl. Phys. Lett. 55, 2573 (1989); http://dx.doi.org/10.1063/1.101982 (3 pages) | Cited 6 times

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Gain characteristics of an Er3+‐doped fiber are investigated with different pump wavelengths using a tunable Ti:sapphire laser in the 0.98 μm band. Maximum gain was obtained at a pump wavelength of 0.980 μm and the gain profile can be fully explained in terms of the pump absorption spectrum. The 3 dB gain bandwidth for the pump wavelength was 10–14 nm. A gain coefficient of 2.6 dB/mW was obtained for a 60 ppm Er3+‐doped fiber with an absorbed pump power of 9 mW.
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42.81.Dp Propagation, scattering, and losses; solitons
42.81.Wg Other fiber-optical devices
07.60.-j Optical instruments and equipment
42.79.-e Optical elements, devices, and systems
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Generation of widely tunable intense far‐infrared radiation pulses by stimulated Raman transitions in methylfluoride gas

P. T. Lang, F. Sessler, U. Werling, and K. F. Renk

Appl. Phys. Lett. 55, 2576 (1989); http://dx.doi.org/10.1063/1.101983 (3 pages) | Cited 9 times

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We report on the generation of widely tunable intense far‐infrared radiation pulses by stimulated Raman transitions in methylfluoride gas. Using a tunable high‐pressure CO2 laser we achieved, by P‐branch tuning of stimulated Raman transitions in 12CH3F and 13CH3F gases, tunable generation of radiation in a series of intervals in the spectral range from 37 to 72 cm−1 covering 20% of this range. Possibilities of further extension of the tuning regions are also discussed.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.Fc Modulation, tuning, and mode locking
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
33.80.Be Level crossing and optical pumping

Auger effects in acceptor‐doped long‐wavelength strained quantum well lasers

Ikuo Suemune

Appl. Phys. Lett. 55, 2579 (1989); http://dx.doi.org/10.1063/1.101984 (3 pages) | Cited 5 times

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Auger effects in undoped and p‐doped strained quantum wells (QWs) were evaluated taking the subband nonparabolicity of the valence band into account. The Auger lifetime is relatively short mainly due to the subband nonparabolicity. However, the Auger rates in a strained QW are lower, and the threshold current reduced to about 1/4 of that in a lattice‐matched QW is expected. It is concluded that a high‐speed laser with a relaxation oscillation frequency of near 70 GHz and with a relatively low threshold current 500 A/cm2 will be realized in a p‐doped (∼5×1018 cm−3) strained QW structure.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes

Connection between linewidth saturation and power increase of transverse magnetic mode in ridge distributed feedback lasers

Adalberto Sapia, Paolo Spano, and Antonio Mecozzi

Appl. Phys. Lett. 55, 2582 (1989); http://dx.doi.org/10.1063/1.101985 (3 pages)

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We present some experimental results of ridge distributed feedback semiconductor lasers showing a linewidth broadening at high emission power which is due to the growth of transverse magnetic polarized radiation. We also show how the linewidth saturation can be ascribed to an increase in the low‐frequency content of the phase noise spectrum. This increase at low frequency is also linked to a deformation in the probability distribution of the instantaneous optical emission frequency.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.55.Px Semiconductor lasers; laser diodes

Dependence of threshold current density on quantum well composition for strained‐layer InGaAs‐GaAs lasers by metalorganic chemical vapor deposition

K. J. Beernink, P. K. York, and J. J. Coleman

Appl. Phys. Lett. 55, 2585 (1989); http://dx.doi.org/10.1063/1.101986 (3 pages) | Cited 23 times

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A series of separate confinement InxGa1−xAs‐GaAs (0.08<x<0.42) strained‐layer quantum well lasers with 70 Å well thickness has been grown by metalorganic chemical vapor deposition. Data are presented on emission wavelengths and threshold current densities (Jth) as a function of composition. A minimum in Jth of 140 A/cm2 was observed for devices with In0.24Ga0.76As wells. The dependence of Jth on well composition is explained by a balance between strain effects and carrier confinement in the quantum well.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
78.45.+h Stimulated emission
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Improved fiber‐optic interferometer for atomic force microscopy

D. Rugar, H. J. Mamin, and P. Guethner

Appl. Phys. Lett. 55, 2588 (1989); http://dx.doi.org/10.1063/1.101987 (3 pages) | Cited 259 times

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A high‐sensitivity fiber‐optic displacement sensor for atomic force microscopy is described. The sensor is based on the optical interference occurring in the micron‐sized cavity formed between the cleaved end of a single‐mode optical fiber and the microscope cantilever. As a result of using a diode laser light source and all‐fiber construction, the sensor is compact, mechanically robust, and exhibits good low‐frequency noise behavior. Peak‐to‐peak noise in a dc to 1 kHz bandwidth is less than 0.1 Å. Images are presented demonstrating atomic resolution of graphite and magnetic force imaging of bits written on a magnetic disk.
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07.60.Ly Interferometers
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.37.-d Microscopy of surfaces, interfaces, and thin films
42.81.Pa Sensors, gyros

Optical intensity modulator for integrated optics by use of a heterojunction bipolar transistor waveguide structure

Yoshitaka Okada, Takuya Ishikawa, and Kunio Tada

Appl. Phys. Lett. 55, 2591 (1989); http://dx.doi.org/10.1063/1.101988 (3 pages) | Cited 2 times

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Device fabrication and basic experimental results obtained with a heterojunction bipolar transistor waveguide structure optical intensity modulator, whose device structure is particularly suitable for possible monolithic integrated circuits, are described for the first time. Common emitter dc current gain hFE obtained with a 0.25‐μm‐thick base/waveguide was 38, and the switching times have been determined as 1.5 ns. Free‐carrier injection modulates the absorption coefficient α in the waveguide mainly by the band filling and plasma dispersion effects and consequently, the output light intensity can be modulated. The optical on/off modulation ratio of up to 2.1:1, corresponding to a modulation efficiency of Δα/α∼89%, has been demonstrated at a base current of 3 mA for a device with an emitter/waveguide width of 7 μm and a length of 190 μm.
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42.82.-m Integrated optics
85.30.Pq Bipolar transistors
42.79.Hp Optical processors, correlators, and modulators
42.79.Gn Optical waveguides and couplers

Acoustic and acousto‐optic properties of 3‐methyl 4‐nitropyridine 1‐oxide—a Brillouin scattering study

J. Sapriel, R. Hierle, J. Zyss, and M. Boissier

Appl. Phys. Lett. 55, 2594 (1989); http://dx.doi.org/10.1063/1.101989 (3 pages) | Cited 5 times

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The complete set of elastic and photoelastic constants of 3‐methyl 4‐nitropyridine 1‐oxide (POM) organic single crystals is measured by Brillouin scattering. The acousto‐optic figures of merit are then derived and the anisotropy of the longitudinal and transverse acoustic wave velocity clearly evidenced from the knowledge of these constants. POM appears to be a promising material for acousto‐optical devices as light deflectors and modulators. It is shown that a Bragg cell using POM as an interaction medium would combine several favorable technical features.
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78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
78.35.+c Brillouin and Rayleigh scattering; other light scattering
43.35.Cg Ultrasonic velocity, dispersion, scattering, diffraction, and attenuation in solids; elastic constants
62.20.D- Elasticity

Photodetachment effect in a radio frequency plasma in CF4

J. L. Jauberteau, G. J. Meeusen, M. Haverlag, G. M. W. Kroesen, and F. J. de Hoog

Appl. Phys. Lett. 55, 2597 (1989); http://dx.doi.org/10.1063/1.101990 (3 pages) | Cited 22 times

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Experiments to study negative ion densities have been carried out using the photodetachment effect in a rf plasma in CF4. Electrons are detached from the negative ions under the influence of the pulse of a Nd:YAG laser. The induced increase of the electron density is measured as a function of time using the shift of the resonance frequency of a microwave cavity containing the plasma. The negative ion density [F−] is found to be about (4±1)×1015 m−3, a factor 4±1 higher than the electron density.
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52.70.Gw Radio-frequency and microwave measurements
82.33.Xj Plasma reactions (including flowing afterglow and electric discharges)
52.80.Pi High-frequency and RF discharges
52.38.-r Laser-plasma interactions

In situ measurement of micromass of the fuel in a cryogenic foam target for laser fusion research

H. Katayama, T. Norimatsu, Y. Kato, T. Yamanaka, and S. Nakai

Appl. Phys. Lett. 55, 2600 (1989); http://dx.doi.org/10.1063/1.101991 (3 pages) | Cited 1 time

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We have presented a novel in situ method which is simple and sensitive, to measure the micromass of the fuel layer in a cryogenic foam target. In this method, a foam shell is mounted on a flexible polyester fiber 7 μm in diameter and 800 μm in length. The fiber is suspended with a stalk which is mechanically vibrated at any given frequency. The resonant frequency of the elastic vibration of a foam‐fiber system is measured before and after fuel loading. The mass of the fuel can be determined from the change in the resonance frequency in the range from submicrograms to submilligrams. The resolution of this system, which is limited by the Q factor of the foam‐fiber system, is better than 0.2 μg corresponding to the measurement accuracy of 0.1%.
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52.55.Pi Fusion products effects (e.g., alpha-particles, etc.), fast particle effects
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
28.52.-s Fusion reactors
07.20.Mc Cryogenics; refrigerators, low-temperature detectors, and other low-temperature equipment

X‐ray emission from plasmas generated by an XeCl laser picosecond pulse train

F. O’Neill, I. C. E. Turcu, D. Xenakis, and M. H. R. Hutchinson

Appl. Phys. Lett. 55, 2603 (1989); http://dx.doi.org/10.1063/1.101992 (2 pages) | Cited 20 times

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Tenfold enhancement of keV x‐ray emission is observed from plasmas generated by an XeCl laser picosecond pulse train as compared to previous results obtained using a 25 ns KrF laser pulse. When a picosecond pulse train of only 165 mJ total energy is used to generate a plasma, the conversion efficiency to x rays at hν≊0.85 keV is 2.4%.
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52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.25.Os Emission, absorption, and scattering of electromagnetic radiation
07.85.-m X- and γ-ray instruments
42.55.Lt Gas lasers including excimer and metal-vapor lasers

Smooth, pseudosmooth, and rough GaAs/AlxGa1−xAs interfaces: Effect of substrate misorientation

J. Massies, C. Deparis, C. Neri, G. Neu, Y. Chen, B. Gil, P. Auvray, and A. Regreny

Appl. Phys. Lett. 55, 2605 (1989); http://dx.doi.org/10.1063/1.101967 (3 pages) | Cited 18 times

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GaAs/AlxGa1−xAs quantum well and superlattice structures have been grown at 600 °C by molecular beam epitaxy on GaAs (001) substrates exactly oriented or slightly misoriented towards (111) Ga and (111) As. It is shown that for the growth conditions used, the step orientation (nature) has a striking influence on the photoluminescence (PL) features of the grown structures: steps along [110] (Ga‐type steps) lead to sharp PL lines (pseudosmooth interfaces), while a considerable broadening of the PL (rough interfaces) is obtained when the steps are along [110] (As‐type steps).
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68.35.Gy Mechanical properties; surface strains
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.55.Cr III-V semiconductors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Characterization of crystalline quality of diamond films by Raman spectroscopy

M. Yoshikawa, G. Katagiri, H. Ishida, A. Ishitani, M. Ono, and K. Matsumura

Appl. Phys. Lett. 55, 2608 (1989); http://dx.doi.org/10.1063/1.101951 (3 pages) | Cited 93 times

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We have measured Raman spectra of diamond films prepared by a hot‐filament method and found that diamond layers on Si substrates are under compressive strain. The degree of the strain is found to increase with increasing nondiamond component in the diamond films. It is shown that Raman spectroscopy is a powerful method to estimate the crystalline quality, especially the strain in the diamond films.
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78.30.Hv Other nonmetallic inorganics
68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.60.Bs Mechanical and acoustical properties

Indium adatom migration during molecular beam epitaxial growth of strained InGaAs/GaAs single quantum wells

D. J. Arent, S. Nilsson, Y. D. Galeuchet, H. P. Meier, and W. Walter

Appl. Phys. Lett. 55, 2611 (1989); http://dx.doi.org/10.1063/1.101952 (3 pages) | Cited 34 times

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Indium composition variations in strained InGaAs/GaAs quantum wells grown on nonplanar substrates by molecular beam epitaxy have been analyzed by spatially and spectrally resolved low‐temperature cathodoluminescence. For our growth conditions, the In adatom migration length on (100) facets has been determined to be ∼25 μm. A maximum relative increase of In incorporation of ≂6% on (100) ridges is observed and is found to be strain independent (In composition) for quantum wells nominally 35 and 70 Å thick with In composition of 0.10–0.22. Significantly asymmetric indium adatom migration is observed between adjacent (100) facets for ridges and grooves formed with (111)A and (311)A multifaceted sidewalls, indicating that multifaceting kinetically inhibits adatom migration. For structures designed for one‐step growth of index‐guided injection lasers with built‐in nonabsorbing waveguides, we show that differences greater than 80 meV in the effective band gap of a 70 Å quantum well can be achieved between the gain region and the nonabsorbing waveguide without relaxing the strain.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.35.Fx Diffusion; interface formation
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
78.60.Hk Cathodoluminescence, ionoluminescence

Biaxial elastic modulus of metallic films determined from vibrating circular membranes

A. Fartash, Ivan K. Schuller, and M. Grimsditch

Appl. Phys. Lett. 55, 2614 (1989); http://dx.doi.org/10.1063/1.101953 (3 pages) | Cited 5 times

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The biaxial moduli of free‐standing metallic films have been determined from their behavior as elastically tensioned membranes. Errors due to thickness determination and warping of the films are eliminated, thereby opening up the possibility of solving a number of controversial issues. The method combines the determination of stress from the frequency of the membrane modes with optical measurements of strain. Tests on Ta and Ni films yield values of the biaxial modulus in good agreement with calculated literature data.
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68.60.Bs Mechanical and acoustical properties
46.80.+j Measurement methods and techniques in continuum mechanics of solids

Grain boundary diffusion activation energy derived from surface roughness measurements of aluminum thin films

L. L. Levenson

Appl. Phys. Lett. 55, 2617 (1989); http://dx.doi.org/10.1063/1.102270 (3 pages) | Cited 2 times

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Surface roughness measurements of 600‐nm‐thick aluminum thin films deposited on oxidized silicon substrates have been made by Verkerk and Raaymakers [Appl. Opt. 25, 3602 (1986)]. Here, their data are shown to yield an Arrhenius activation energy of 0.55±0.05 eV/atom. This activation energy is found for T>0.5 Tm, where T is the substrate temperature during deposition and Tm is the melting temperature of aluminum. The regime T>0.5Tm is known to correspond to zone 3 of the structure zone model (SZM) developed by Movchan and Demchishin [Fiz. Metal. Metalloved. 28, 653 (1969)]. The activation energy for grain growth within zone 3 is attributed primarily to bulk or grain boundary diffusion. The activation energy derived from the data of Verkerk and Raaymakers agrees well with the known activation energy for grain boundary diffusion in bulk aluminum, 0.56 eV/atom.
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68.35.Gy Mechanical properties; surface strains
68.35.Fx Diffusion; interface formation
66.30.Fq Self-diffusion in metals, semimetals, and alloys
68.60.Bs Mechanical and acoustical properties

Droplet spraying of heavy metal fluoride glass for optical waveguide fabrication

M. M. Broer, J. R. Bautista, and A. J. Bruce

Appl. Phys. Lett. 55, 2620 (1989); http://dx.doi.org/10.1063/1.101954 (2 pages)

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We have demonstrated a novel technique for rapid thermal quenching of heavy metal fluoride glass melts for use in optical fiber preform fabrication. Molten fluoride glass droplets were sprayed from a gas‐atomizing nozzle system. Amorphous ZrF4‐BaF2‐LaF3‐AlF3‐NaF particles were obtained with very high quenching rates (∼1200 K/min) compared to bulk cast glass samples.
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81.05.Kf Glasses (including metallic glasses)
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
42.81.Bm Fabrication, cladding, and splicing
42.79.Gn Optical waveguides and couplers

Effect of Al mole fraction on carrier diffusion lengths and lifetimes in AlxGa1−xAs

H. A. Zarem, J. A. Lebens, K. B. Nordstrom, P. C. Sercel, S. Sanders, L. E. Eng, A. Yariv, and K. J. Vahala

Appl. Phys. Lett. 55, 2622 (1989); http://dx.doi.org/10.1063/1.101955 (3 pages) | Cited 13 times

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The ambipolar diffusion length and carrier lifetime are measured in AlxGa1−xAs for several mole fractions in the interval 0<x<0.38. These parameters are found to have significantly higher values in the higher mole fraction samples. These increases are attributed to occupation of states in the indirect valleys, and supporting calculations are presented.
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72.20.Fr Low-field transport and mobility; piezoresistance
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.80.Ey III-V and II-VI semiconductors
71.20.Nr Semiconductor compounds
71.20.Ps Other inorganic compounds

Investigation of oxide particles in Czochralski silicon heat treated for intrinsic gettering using scanning infrared microscopy

Z. Laczik, G. R. Booker, W. Bergholz, and R. Falster

Appl. Phys. Lett. 55, 2625 (1989); http://dx.doi.org/10.1063/1.101956 (3 pages) | Cited 7 times

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The precipitation of oxygen in Czochralski silicon slices and the effect of the resulting oxide particles on the gettering of copper have been investigated. The scanning infrared microscope was used to investigate individual particles within the bulk slices. Quantitative data on particle densities and distributions, and surface denuded zone depths for low particle densities were obtained. A major change in the precipitation behavior of copper was observed on going from just below to just above the threshold oxide precipitation level for gettering to occur.
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61.72.-y Defects and impurities in crystals; microstructure
66.30.J- Diffusion of impurities

Arsenic‐induced step rearrangements on vicinal Si (111) substrates

T. R. Ohno and Ellen D. Williams

Appl. Phys. Lett. 55, 2628 (1989); http://dx.doi.org/10.1063/1.101957 (3 pages) | Cited 9 times

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The orientational stability of stepped (vicinal) Si (111) surfaces during As exposure has been investigated using low‐energy electron diffraction and Auger electron spectroscopy. When clean, Si (111) surfaces misoriented in the [211] and [110] directions are faceted, while those misoriented in the [211] direction are step tripled. If these surfaces are equilibrated in an arsenic pressure, they all form orientationally stable step‐doubled structures. However, exposure of the clean surfaces to As at temperatures<∼750 °C results in metastable structures with mixed step heights and/or facets.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
68.35.Fx Diffusion; interface formation
61.05.jh Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)

Effect of spatially variable effective mass on static and dynamic properties of resonant tunneling devices

R. K. Mains, I. Mehdi, and G. I. Haddad

Appl. Phys. Lett. 55, 2631 (1989); http://dx.doi.org/10.1063/1.101958 (3 pages) | Cited 10 times

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The effect of incorporating a spatially variable effective mass in the Schrödinger equation method of resonant tunneling device modeling is investigated. It is shown that inclusion of this effect can produce an order of magnitude difference in the calculated peak current density of the static current voltage (I‐V) curve for the resonant tunneling diode. Results for a particular In0.53Ga0.47As‐AlAs structure show that much better agreement between theory and experiment is obtained by including this effect. Also, comparison of transient results for an In0.53Ga0.47As‐In0.52Al0.48As structure shows a significant change in the diode switching transients.
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85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
85.30.De Semiconductor-device characterization, design, and modeling
73.40.Gk Tunneling
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Ionization entropy and charge‐state‐controlled metastable defects in semiconductors

Howard M. Branz and Richard S. Crandall

Appl. Phys. Lett. 55, 2634 (1989); http://dx.doi.org/10.1063/1.101959 (3 pages) | Cited 3 times

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We propose a new theory of entropy‐driven, charge‐state‐controlled metastability in semiconductors. The entropy change due to metastable defect ionization near 300 K reduces the Gibbs free energy by up to 0.1 eV. This affects equilibrium populations of the various defect charge states and configurations. An example is found in the experiment of Hamilton, Peaker, and Pantelides [Phys. Rev. Lett. 61, 1679 (1988)] in which a deep level transient spectroscopy signal suddenly disappears during cooling when the ionization entropy term causes a defect’s stable local energy minimum to become metastable.
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61.72.Bb Theories and models of crystal defects
65.20.-w Thermal properties of liquids
65.40.gd Entropy
71.55.-i Impurity and defect levels

Linear polarized luminescence from CdTe epilayers

T. A. Kuhn, W. Ossau, R. N. Bicknell‐Tassius, and G. Landwehr

Appl. Phys. Lett. 55, 2637 (1989); http://dx.doi.org/10.1063/1.101960 (3 pages) | Cited 8 times

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We report for the first time the observation of strongly linearly polarized luminescence from CdTe epitaxial layers grown by photoassisted molecular beam epitaxy. Strong linear polarization was detected in the acceptor‐bound exciton spectral region and in the pair band regions (1.54–1.56 eV and 1.46–1.48 eV). The linear polarization is believed to be due to the preferential alignment of complex centers along one of the [110] lattice directions. The cause of the preferential orientation of these complex centers is the inequivalence during the planar growth on the (100) surface of the [110] and [110] directions in the zinc‐blende lattice.
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78.55.Et II-VI semiconductors
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology

Interface study of hydrogenated amorphous silicon nitride on hydrogenated amorphous silicon by x‐ray photoelectron spectroscopy

M. Beaudoin, C. J. Arsenault, R. Izquierdo, and M. Meunier

Appl. Phys. Lett. 55, 2640 (1989); http://dx.doi.org/10.1063/1.102299 (3 pages) | Cited 9 times

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The interface between near stoichiometric hydrogenated amorphous silicon nitride (a‐SiNx :H) deposited on hydrogenated amorphous silicon (a‐Si:H) is studied using x‐ray photoelectron spectroscopy as a function of the electron escape angle. This method allows the study of a‐SiNx :H overlayers of about 40 Å thickness which is typical of the thicknesses used for well and barrier layers in superlattices and quantum well structures. Within the instrument’s resolution, subnitride components constitute less than 1% of the interface bonds. It is therefore concluded that the interface is atomically abrupt.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.65.-b Surface treatments

Shubnikov–de Haas effect in thin epitaxial films of gray tin

L. W. Tu, G. K. Wong, S. N. Song, Z. Zhao, and J. B. Ketterson

Appl. Phys. Lett. 55, 2643 (1989); http://dx.doi.org/10.1063/1.101961 (3 pages) | Cited 1 time

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The transverse magnetoresistance and Hall effect have been studied for n‐type gray tin epilayers grown on (001)CdTe substrates by the molecular beam epitaxy technique. Shubnikov–de Haas oscillations were observed in samples having Hall mobilities ≥104 cm2 /V s at low temperatures. Measurements were carried out using both the dc method and field modulation techniques in the temperature range from 1.2 to 10 K and in magnetic fields up to 10 T. Beat patterns were observed in the Shubnikov–de Haas spectra which we ascribe either to inhomogeneous doping, arising from the diffusion of Cd and Te from the substrate, or to quantization of the motion in the direction parallel to the film normal. The Shubnikov–de Haas carrier concentration of a 1210 Å film was determined to be nSdH =2.3×1017 cm−3, in good agreement with the Hall density.
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73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
73.61.At Metal and metallic alloys
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
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