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10 Jul 1989

Volume 55, Issue 2, pp. 91-206

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Far‐infrared photovoltaic effect in a Landau level diode

C. T. Liu, B. E. Kane, D. C. Tsui, and G. Weimann

Appl. Phys. Lett. 55, 162 (1989); http://dx.doi.org/10.1063/1.102130 (3 pages) | Cited 3 times

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We have investigated the far‐infrared (FIR) photoresponse of a Landau level diode. A negative photovoltaic current is observed. It results from carriers generated by cyclotron resonance transitions in the two‐dimensional depletion region at the gate edge of the device and subsequently swept out of the depletion region by the strong built‐in electric field. The potential use of this device as a tunable FIR photodetector is discussed.
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72.40.+w Photoconduction and photovoltaic effects
85.60.Gz Photodetectors (including infrared and CCD detectors)
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Below‐band‐gap photon recycling in AlxGa1−xAs

J. L. Bradshaw, R. P. Devaty, W. J. Choyke, and R. L. Messham

Appl. Phys. Lett. 55, 165 (1989); http://dx.doi.org/10.1063/1.102131 (3 pages) | Cited 9 times

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A long minority‐carrier diffusion length and the transmission of Alx Ga1−x As luminescence through Alx Ga1−x As layers are identified as two processes causing the excitation of GaAs spectra through thick Alx Ga1−x As layers, as well as contributing to enhancements in low‐temperature photoluminescence intensity observed in Alx Ga1−x As layers without GaAs substrates. A simple model for intensity enhancement due to below‐band‐gap photon recycling is introduced to explain the observed enhancements. Some features that uniquely distinguish below‐band‐gap photon recycling from the better known room‐temperature process are presented.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
71.20.Nr Semiconductor compounds
71.20.Ps Other inorganic compounds
78.55.Cr III-V semiconductors

Magneto‐optics of a quasi‐zero‐dimensional electron gas

C. T. Liu, K. Nakamura, D. C. Tsui, K. Ismail, D. A. Antoniadis, and Henry I. Smith

Appl. Phys. Lett. 55, 168 (1989); http://dx.doi.org/10.1063/1.102132 (3 pages) | Cited 56 times

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We have investigated theoretically and experimentally the energy levels and allowed optical transitions with energies ΔE of a quasi‐zero‐dimensional (Q0D) electron gas in a magnetic field B. Using a two‐dimensional harmonic confining potential with oscillator frequency ω0, the theory predicts two values for ΔE. The resonance position in the magnetotransmission spectra from the Q0D system realized on a grid‐gate GaAs/AlGaAs heterostructure, depends strongly on the 2D confining potential induced by the gate voltage Vg and, when Vg=−0.5 and −1.5 V, agrees with ΔE calculated with ℏω0=1.5 and 2.8 meV, respectively.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
78.20.Ls Magneto-optical effects
72.15.Rn Localization effects (Anderson or weak localization)

High performance InP/InGaAs heterostructure bipolar transistors grown by metalorganic vapor phase epitaxy

R. N. Nottenburg, Y. K. Chen, T. Tanbun‐Ek, R. A. Logan, and D. A. Humphrey

Appl. Phys. Lett. 55, 171 (1989); http://dx.doi.org/10.1063/1.102133 (2 pages) | Cited 5 times

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We demonstrate high performance InGaAs/InP heterostructure bipolar transistors grown by metalorganic vapor phase epitaxy. A unity current gain cutoff frequency fT=78 GHz and a maximum oscillation frequency fmax=42 GHz are achieved in transistors with emitter size 2.5×11 μm2. Ring oscillators using nonthreshold logic show a propagation delay of 31 ps.
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85.30.Pq Bipolar transistors
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Optical characterization of nonuniform electric fields in multiple quantum well diodes

J. W. Little, R. P. Leavitt, Shlomo Ovadia, and Chi H. Lee

Appl. Phys. Lett. 55, 173 (1989); http://dx.doi.org/10.1063/1.102112 (3 pages) | Cited 5 times

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Low‐temperature photocurrent and photoluminescence spectroscopies have been used to quantify the effects of electric field nonuniformities (on the order of 100 kV/cm) within the ∼1‐μm‐thick intrinsic regions of GaAs/AlGaAs multiple quantum well p‐i‐n photodiodes. The smearing out of excitonic spectral features due to nonuniform fields agrees well with the results of calculations performed using a single‐band envelope‐function approximation together with a standard depletion model for a p−/n+ junction.
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85.60.Dw Photodiodes; phototransistors; photoresistors
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.50.Pz Photoconduction and photovoltaic effects

Observation of electron resonant tunneling in a lateral dual‐gate resonant tunneling field‐effect transistor

S. Y. Chou, D. R. Allee, R. F. W. Pease, and J. S. Harris

Appl. Phys. Lett. 55, 176 (1989); http://dx.doi.org/10.1063/1.102113 (3 pages) | Cited 22 times

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A new lateral resonant tunneling field‐effect transistor (LARTFET) has been fabricated using molecular beam epitaxy and ultrahigh‐resolution electron beam lithography. The LARTFET has two 80‐nm‐long gate electrodes separated by 100 nm. The dual gates create double potential barriers in the channel and a quantum well in between. Conductance oscillations are observed, which, for the first time, indicate electron resonant tunneling through the energy states in a lateral double‐barrier quantum well formed electrostatically. Furthermore, after illumination, two additional negative transconductance peaks are observed. These additional peaks may be related to electron resonant tunneling through the donor‐related deep levels in silicon‐doped Al0.35Ga0.65As .
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85.30.Tv Field effect devices
73.40.Gk Tunneling
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Superconducting properties of V3Ga prepared by rapid liquid quenching and solid‐state precipitation

F. Habbal, G. B. Clemente, and D. Turnbull

Appl. Phys. Lett. 55, 179 (1989); http://dx.doi.org/10.1063/1.102399 (3 pages)

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A modified solid‐state precipitation process for the formation of stoichiometric A‐15 V3Ga is presented which results in high values of Tc=15.0 K and Hc2(4.2)=22 T, excellent phase homogeneity, and a high critical current Jc(4.2 K)=3×105–6×104 A/cm2 over the field range 0–18 T. We find that grain boundary pinning is dominant, producing a very high specific pinning force Qmax=6.4×104 dyn/cm2. The nonparamagnetically limited Hc2 is needed to explain our high flux‐pinning results.
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74.25.Uv Vortex phases (includes vortex lattices, vortex liquids, and vortex glasses)
74.70.Ad Metals; alloys and binary compounds (including A15, MgB2, etc.)
74.70.-b Superconducting materials other than cuprates
81.05.Bx Metals, semimetals, and alloys

Time‐resolved spectroscopic study of the KrF laser‐induced plasma plume created above an YBaCuO superconducting target

C. Girault, D. Damiani, J. Aubreton, and A. Catherinot

Appl. Phys. Lett. 55, 182 (1989); http://dx.doi.org/10.1063/1.102400 (3 pages) | Cited 39 times

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The laser‐induced plasma plume created above an YBaCuO superconducting target by a KrF laser beam (248 nm) is investigated by time‐resolved spectroscopy. High‐resolution spectra are obtained and ejection velocities of ablated species are deduced from temporal evolution of spatially resolved spectroscopic measurements.
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74.70.-b Superconducting materials other than cuprates
79.20.Ds Laser-beam impact phenomena
81.15.Jj Ion and electron beam-assisted deposition; ion plating
52.25.-b Plasma properties

Magnetization and flux creep in textured Bi(Pb)‐Sr‐Ca‐Cu‐O oxide superconductors

H. Kumakura, K. Togano, E. Yanagisawa, and H. Maeda

Appl. Phys. Lett. 55, 185 (1989); http://dx.doi.org/10.1063/1.102401 (3 pages) | Cited 10 times

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Flux creep for textured Bi(Pb)‐Sr‐Ca‐Cu‐O tapes was investigated by means of dc magnetization measurement. Much improvement in flux pinning is attained by the grain orientation for a Bi‐based oxide. However, flux‐pinning energy U0 in a magnetic field of 10–85 kOe is as small as 10–20 meV at 4.2 K. This value is still very small for practical use.
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74.25.Ha Magnetic properties including vortex structures and related phenomena
74.25.Uv Vortex phases (includes vortex lattices, vortex liquids, and vortex glasses)
74.70.-b Superconducting materials other than cuprates

Preparation of superconducting Tl‐Ca‐Ba‐Cu thin films by chemical deposition

William L. Olson, Michael M. Eddy, Tim W. James, Robert B. Hammond, George Gruner, and Larry Drabeck

Appl. Phys. Lett. 55, 188 (1989); http://dx.doi.org/10.1063/1.102402 (3 pages) | Cited 23 times

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A chemical deposition process for the preparation of superconducting thin films of Tl2CaBa2Cu2O8 (2122) and Tl2Ca2Ba2Cu3O10 (2223) has been developed. Oriented, superconducting 2122 and 2223 thin films have been successfully fabricated on single‐crystal yttria‐stabilized zirconia and magnesium oxide substrates (〈100〉 orientation). Epitaxial films have been prepared on magnesium oxide. Chemical analysis of the film composition by energy dispersive x‐ray analysis is in agreement (2122 vs 2223) with the phases indicated by powder x‐ray diffraction. The thin films of these compounds exhibited superconducting transition temperatures above 105 K as determined by variable‐temperature resistivity and ac magnetic susceptibility measurements. In addition, microwave surface resistance measurements at 150 GHz show that these films have very low losses at 77 K (1 mΩ).
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74.78.-w Superconducting films and low-dimensional structures
74.70.-b Superconducting materials other than cuprates
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology

YbBa2Cu3O7 epitaxial films grown by a Ag‐enhanced liquid gas solidification process

H. S. Chen, A. R. Kortan, F. A. Thiel, and L. C. Kimerling

Appl. Phys. Lett. 55, 191 (1989); http://dx.doi.org/10.1063/1.102403 (3 pages) | Cited 5 times

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Effects of Ag addition on the epitaxially grown YbBa2Cu3O7 superconductor on a SrTiO3 (100) substrate by the liquid gas solidification process have been investigated. Ag acts as flux and does not incorporate in the oxide formation. Its addition, however, enhances the transport properties resulting from a reduction in film‐substrate interaction. Values of Tc(R=0)=90 K and Jc(77 K, H=0)=3×104 A/cm2 can be achieved reproducibly.
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74.78.-w Superconducting films and low-dimensional structures
74.70.-b Superconducting materials other than cuprates
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
74.25.Sv Critical currents

Preparation of Y‐Ba‐Cu‐O high Tc superconducting thin films by plasma‐assisted organometallic chemical vapor deposition

G. R. Bai, W. Tao, R. Wang, L. M. Xie, X. K. Zhang, J. Huang, C. T. Qian, W. K. Zhou, C. Q. Ye, J. G. Ren, Y. Q. Li, W. M. Luo, and J. B. Chen

Appl. Phys. Lett. 55, 194 (1989); http://dx.doi.org/10.1063/1.102404 (3 pages) | Cited 16 times

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Thin films of the high Tc superconducting Y‐Ba‐Cu metal oxide have been prepared for the first time by plasma‐assisted organometallic chemical vapor deposition using β‐diketonate chelates of Y, Ba, and Cu, Y(C11H19O2)3, Ba(C11H19O2)2, and Cu(C11H19O2)2 as starting materials, followed by post‐annealing under a reduced pressure of oxygen stream. X‐ray diffraction spectra indicate that the films deposited on the yttria‐stabilized zirconia (YSZ) substrate have a significant preferential orientation of the crystallite c axis being perpendicular to the substrate surface. Four‐probe resistivity measurements reveal the temperature of the onset of superconductivity at 91.6 K and zero resistance by 78.5 K.
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74.78.-w Superconducting films and low-dimensional structures
74.70.-b Superconducting materials other than cuprates
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology

Y‐Ba‐Cu‐O superconducting films produced by long‐pulse laser vaporization

M. Balooch, D. R. Olander, and R. E. Russo

Appl. Phys. Lett. 55, 197 (1989); http://dx.doi.org/10.1063/1.102405 (3 pages) | Cited 9 times

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Deposition of superconducting thin films from YBa2Cu3O7 targets using a long‐pulse (ms) Nd‐glass laser with 50 J/pulse energy has been demonstrated. The deposition rate was approximately 100 nm/pulse and the film stoichiometry was close to that of the target. Scanning electron microscopy revealed spherical inclusions in the film. Scanning tunneling microscopy in air showed a terrace‐ledge structure on the uniform portion of the film. A film produced by four pulses on a SrTiO3 substrate, held at 540 °C, and post‐annealed in O2 at 850 °C for about 2h exhibited an onset transition at 78 K and zero resistance at 61 K. This new approach can provide fast deposition rates and broad‐area film coverage per laser shot.
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74.78.-w Superconducting films and low-dimensional structures
74.70.-b Superconducting materials other than cuprates
81.15.Jj Ion and electron beam-assisted deposition; ion plating
74.25.Sv Critical currents
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition

New type of compensation wall in ferrimagnetic double layers

P. Hansen

Appl. Phys. Lett. 55, 200 (1989); http://dx.doi.org/10.1063/1.102095 (3 pages) | Cited 5 times

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A new type of compensation wall located at the interface of thin rare‐earth transition‐metal double layers was studied in terms of a simple wall model. The magnetic field dependence of the wall energy and thickness was calculated yielding a variation of both by a factor of 3 in fields up to 1.6×106 A/m. Strong changes of the relative magnetization result for wall thicknesses that are comparable with the film thickness. The calculated variation of the relative magnetization with the field indicates that these changes can be directly observed by magnetization measurements. This opens new possibilities in the study of domain wall structures.
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75.60.Ch Domain walls and domain structure
75.50.Gg Ferrimagnetics
75.50.Kj Amorphous and quasicrystalline magnetic materials
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)

Scanning capacitance microscopy on a 25 nm scale

C. C. Williams, W. P. Hough, and S. A. Rishton

Appl. Phys. Lett. 55, 203 (1989); http://dx.doi.org/10.1063/1.102096 (3 pages) | Cited 109 times

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A near‐field capacitance microscope has been demonstrated on a 25 nm scale. A resonant circuit provides the means for sensing the capacitance variations between a sub‐100‐nm tip and surface with a sensitivity of 1×10−19 F in a 1 kHz bandwidth. Feedback control is used to scan the tip at constant gap across a sample, providing a means of noncontact surface profiling. Images of conducting and nonconducting structures are presented.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
73.61.-r Electrical properties of specific thin films
68.37.-d Microscopy of surfaces, interfaces, and thin films
77.55.-g Dielectric thin films
FREE

Erratum: Exchange interactions in quantum well subbands [Appl. Phys. Lett. 53, 1931 (1988)]

K. M. S. V. Bandara, D. D. Coon, Byungsung O, Y. F. Lin, and M. H. Francombe

Appl. Phys. Lett. 55, 206 (1989); http://dx.doi.org/10.1063/1.102380 (1 page) | Cited 7 times

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Abstract Unavailable
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
71.70.Gm Exchange interactions
85.60.Gz Photodetectors (including infrared and CCD detectors)
73.50.Pz Photoconduction and photovoltaic effects
99.10.Cd Errata
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