The effects of various plasma‐enhanced chemical vapor deposition SiNx
encapsulating films on the electrical activation of ion‐implanted 29
in GaAs were investigated. Films inducing the most tensile stress in the GaAs resulted in the lowest activation efficiency and films inducing the most compressive resulted in the highest. The results suggest that ratio of donors to acceptors, SiGa@B:
, is a sensitive function of the stress state during the activation anneal.