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17 Jul 1989

Volume 55, Issue 3, pp. 209-322

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Photoemission studies of the interfacial reactions between ZnS and anodic oxide film of HgCdTe

S. Jin and W. M. Lau

Appl. Phys. Lett. 55, 209 (1989); http://dx.doi.org/10.1063/1.102381 (3 pages) | Cited 1 time

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The interfacial reactions of zinc sulphide (ZnS) on an anodic oxide film of mercury cadmium telluride (HgCdTe) have been studied by polar angle dependent x‐ray photoelectron spectroscopy (XPS). It was found that the sputter deposition of ZnS reduced the oxidized tellurium of the anodic film at the interface. In addition, the XPS results show a high Zn/S ratio when the deposition is confined to a few monolayers. The ratio, however, decreases to unity for a thick film. The results indicate that zinc atoms sputtered from the ZnS target play an important role in the interfacial reactions between the deposited overlayer and the HgCdTe anodic oxide film.
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82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
79.60.Jv Interfaces; heterostructures; nanostructures

Tunable active chirped‐corrugation waveguide filters

Thomas Schrans, Michael Mittelstein, and Amnon Yariv

Appl. Phys. Lett. 55, 212 (1989); http://dx.doi.org/10.1063/1.101911 (3 pages) | Cited 4 times

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A novel tunable semiconductor waveguide reflection filter is proposed and analyzed. The filter is based on spatially selective gain pumping of a chirped‐corrugation waveguide. This active chirped‐corrugation waveguide filter (ACF) is considered for monolithic broadband tuning of semiconductor lasers.
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42.79.Ci Filters, zone plates, and polarizers
42.79.Gn Optical waveguides and couplers
42.60.Fc Modulation, tuning, and mode locking
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Interferometric detection of forward scattered light from small particles

J. S. Batchelder and M. A. Taubenblatt

Appl. Phys. Lett. 55, 215 (1989); http://dx.doi.org/10.1063/1.102268 (3 pages) | Cited 14 times

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The detection of subtenth micron paticles in processing fluids is a critical and growing need in the semiconductor industry. In this letter, we show that a small dielectric particle in a focused monochromatic light beam produces a scattered wave (Rayleigh scattering) in phase quadrature with the far‐field incident beam, therefore causing a phase shift in this beam. Thus, the forward scattered field due to the particle may be detected using a bright field interferometer. This allows detection which is near Shott noise limited even for very small particles, and measures the sign of the scattered field as well, such that particles may be distinguished from bubbles. We describe an appropriate interferometer design based on Nomarski optics, which we have used to verify our calculation, measuring scattering in water from single polystyrene spheres as small as 0.038 μm in diameter.
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42.25.Dd Wave propagation in random media
42.25.Fx Diffraction and scattering
42.25.Ja Polarization
78.35.+c Brillouin and Rayleigh scattering; other light scattering

Efficient generation at 421 nm by resonantly enhanced doubling of GaAlAs laser diode array emission

Lew Goldberg and Myung K. Chun

Appl. Phys. Lett. 55, 218 (1989); http://dx.doi.org/10.1063/1.101912 (3 pages) | Cited 27 times

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The 842‐nm diffraction‐limited emission from an injection‐locked laser diode array was frequency doubled using a monolithic spherical‐mirror KNbO3 crystal cavity. Maximum unidirectional external 421 nm power of 24 mW was generated with 167 mW of pump power. Maximum total internal second‐harmonic power and conversion efficiency of 64 mW and 45% were obtained. Effects of heating in the crystal are described.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking

Room‐temperature continuous wave lasing characteristics of a GaAs vertical cavity surface‐emitting laser

Fumio Koyama, Susumu Kinoshita, and Kenichi Iga

Appl. Phys. Lett. 55, 221 (1989); http://dx.doi.org/10.1063/1.101913 (2 pages) | Cited 77 times

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Room‐temperature continuous wave (cw) operation of a GaAs vertical microcavity surface‐emitting laser has been achieved. An ultrashort cavity device with a cavity length of ∼5.5 μm was grown by metalorganic chemical vapor deposition. cw lasing characteristics such as mode properties and temperature characteristics were examined. Single longitudinal mode operation with a side mode suppression ratio of 35 dB was obtained. The temperature range for single mode operation was more than 50 K.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Gain measurements of the C VI 3d–2p transition (18.2 nm) from the wall‐confined carbon plasmas produced by a CO2 laser

E. Miura, H. Daido, Y. Kitagawa, K. Sawai, Y. Kato, K. Nishihara, S. Nakai, and C. Yamanaka

Appl. Phys. Lett. 55, 223 (1989); http://dx.doi.org/10.1063/1.101914 (3 pages) | Cited 6 times

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We propose a 1‐cm‐long cylinder‐type target as the gain medium of a recombination‐pumped extreme‐ultraviolet (XUV) laser. The gain medium plasma was pumped by a long‐pulse CO2 laser (400 J energy in 50 ns pulse duration). At the C VI 3d–2p transition (18.2 nm) we obtained the gain‐length product up to 2.4, which was estimated from the line intensity ratio of the axial to transverse directions. The electron temperature of 54 eV and density of 1.2×1019 cm−3 near the cylinder wall measured using soft‐x‐ray spectroscopy satisfied the condition for the generation of the population inversion between n=3 and 2 levels of the C VI ions.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.55.-f Lasers
52.25.Os Emission, absorption, and scattering of electromagnetic radiation

Low‐temperature reaction in tungsten layers deposited on Si(100) substrates

A. Cros, R. Pierrisnard, F. Pierre, J. M. Layet, and F. Meyer

Appl. Phys. Lett. 55, 226 (1989); http://dx.doi.org/10.1063/1.102382 (3 pages) | Cited 1 time

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Tungsten layers have been evaporated with an electron gun under ultrahigh vacuum conditions on atomically clean Si(100) substrates. The metallic films deposited on substrates at room temperature are mostly in the body‐centered‐cubic α phase of tungsten. Upon annealing at 400 °C, the bulk of the layer stays unreacted but we have observed the appearance of cracks in the metallic film and the segregation of silicon atoms at the surface. These atoms are not in the form of crystalline WSi2.
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68.55.-a Thin film structure and morphology
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
73.61.At Metal and metallic alloys
68.35.Fx Diffusion; interface formation

Electron microdiffraction of faulted regions in Co‐Cr and Co‐Ni‐Cr thin films

K. Hono, B. G. Demczyk, and D. E. Laughlin

Appl. Phys. Lett. 55, 229 (1989); http://dx.doi.org/10.1063/1.101915 (3 pages) | Cited 15 times

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The planar defects which are commonly observed in deposited Co‐Cr and Co‐Ni‐Cr magnetic thin films have been characterized by electron microdiffraction and trace analysis. It was unambiguously shown that these planar defects are (0001) stacking faults, which are thought to be formed to reduce the growth stress of the film during deposition.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Cd Deposition by sputtering
68.55.-a Thin film structure and morphology

Multimegabar pressures using synthetic diamond anvils

Arthur L. Ruoff and Yogesh K. Vohra

Appl. Phys. Lett. 55, 232 (1989); http://dx.doi.org/10.1063/1.101916 (3 pages) | Cited 5 times

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Synthetic type 1B yellow diamonds containing nitrogen in single substitutional form, with extremely low birefringence, were used as anvils in a diamond anvil cell. The diamonds were well characterized by infrared and visible absorption spectra. Sensitive spectroscopic methods along with mechanical chopping techniques were used to record ruby fluorescence to 250–300 GPa, a pressure equal to or exceeding that attained with natural diamonds. Nitrogen platelets are not essential to attaining multimegabar pressures.
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07.35.+k High-pressure apparatus; shock tubes; diamond anvil cells
62.50.-p High-pressure effects in solids and liquids
71.55.Ht Other nonmetals
78.55.Hx Other solid inorganic materials

Optical study of residual strains in CdTe and ZnTe layers grown by molecular beam epitaxy on GaAs

Le Si Dang, J. Cibert, Y. Gobil, K. Saminadayar, and S. Tatarenko

Appl. Phys. Lett. 55, 235 (1989); http://dx.doi.org/10.1063/1.101917 (3 pages) | Cited 17 times

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Residual strains in (001) and (111) thick layers of CdTe and ZnTe grown by molecular beam epitaxy on nominal or slightly tilted (001) GaAs have been investigated by reflectance, photoluminescence, and optical pumping experiments at low temperature. Strains are found to be independent of both layer orientations and thicknesses in the range 2–6 μm. They are compressive ≊−0.5×10−3 in CdTe and tensile ≊10−3 in ZnTe. Estimates of thermal expansion effects show that they are the dominant cause of residual strains in these heterostructures.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.55.Et II-VI semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.60.Bs Mechanical and acoustical properties

Reconstruction of the spatial structure of current filaments in n‐GaAs in a magnetic field

A. Brandl, M. Völcker, and W. Prettl

Appl. Phys. Lett. 55, 238 (1989); http://dx.doi.org/10.1063/1.101918 (3 pages) | Cited 38 times

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The spatial pattern of current filaments generated by impurity breakdown has been investigated in a semiconductor for the first time as a function of the magnetic field. Large asymmetries of shallow impurity excited‐state population were observed occurring at opposite edges of a filament normal to the magnetic field. Deformation of filament boundaries evolves at very low field strengths being comparably small to those which destabilize current flow yielding current fluctuation and chaos.
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72.20.My Galvanomagnetic and other magnetotransport effects
72.70.+m Noise processes and phenomena
71.55.Eq III-V semiconductors

Fast diffusers Cu and Ni as the origin of electrical activity in a silicon grain boundary

J.‐L. Maurice and C. Colliex

Appl. Phys. Lett. 55, 241 (1989); http://dx.doi.org/10.1063/1.101919 (3 pages) | Cited 51 times

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Grain boundary (GB) electrical activity is increased by heat treatment in silicon; the origin of the phenomenon is a subject of controversy and is often attributed to oxide precipitation. This letter presents microanalytical results (conventional and scanning transmission electron microscopy, energy dispersive x‐ray spectroscopy, and electron energy loss spectroscopy), obtained on a Σ=25 bicrystal before and after annealing in sealed ampoules at 900 °C. The enhancement of the electrical activity, confirmed by electron beam induced current and deep level transient spectroscopy, is shown to appear at the boundary simultaneously with precipitates containing copper and nickel. The major role of the fast diffusing 3d metals on the GB electrical properties is demonstrated.
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81.40.Rs Electrical and magnetic properties related to treatment conditions
61.72.Mm Grain and twin boundaries
66.30.J- Diffusion of impurities
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Steric hindrance effects in atomic layer epitaxy of InAs

Weon G. Jeong, E. P. Menu, and P. D. Dapkus

Appl. Phys. Lett. 55, 244 (1989); http://dx.doi.org/10.1063/1.101920 (3 pages) | Cited 16 times

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Atomic layer epitaxy of InAs is demonstrated. Saturation of the growth rate of one monolayer per cycle is achieved at a growth temperature of 340 °C. The growth rate is found to be a strong function of trimethylindium exposure times for the same total amount of reactant exposure per cycle. There is a threshold exposure time to achieve a growth rate of one monolayer per cycle. For shorter exposure time, the growth rate saturates to sub‐one monolayer per cycle. The dependence of growth rate on exposure time is explained by steric hindrance effects of the initial adsorbate.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics

Growth of single‐crystal columns of CoSi2 embedded in epitaxial Si on Si(111) by molecular beam epitaxy

R. W. Fathauer, C. W. Nieh, Q. F. Xiao, and Shin Hashimoto

Appl. Phys. Lett. 55, 247 (1989); http://dx.doi.org/10.1063/1.102383 (3 pages) | Cited 15 times

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The codeposition of Si and Co on a heated Si(111) substrate is found to result in epitaxial columns of CoSi2 if the Si:Co ratio is greater than approximately 3:1. These columns are surrounded by a Si matrix which shows bulk‐like crystalline quality based on transmission electron microscopy and ion channeling. This phenomenon has been studied as functions of substrate temperature and Si:Co ratio. Samples with columns ranging in average diameter from approximately 25 to 130 nm have been produced.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.Nq Composition and phase identification
68.55.-a Thin film structure and morphology
68.35.B- Structure of clean surfaces (and surface reconstruction)

Numerical study of nonequilibrium electron transport in AlGaAs/GaAs heterojunction bipolar transistors

P. H. Beton and A. F. J. Levi

Appl. Phys. Lett. 55, 250 (1989); http://dx.doi.org/10.1063/1.101921 (3 pages) | Cited 9 times

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We have simulated numerically the dynamics of nonequilibrium electron transport in n‐p‐n AlGaAs/GaAs heterojunction bipolar transistors. We show that collector transit time is intimately related to base transport dynamics and high p‐type carrier concentration in a thin base improves device performance. However, even for a very thin collector depletion region, the small Γ‐X intervalley energy separation in GaAs places severe constraints on efficient collector transport.
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85.30.Pq Bipolar transistors
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.50.Bk General theory, scattering mechanisms
85.30.De Semiconductor-device characterization, design, and modeling

Laser photochemical deposition of germanium‐silicon alloy thin films

Hubert H. Burke, Irving P. Herman, Viken Tavitian, and J. Gary Eden

Appl. Phys. Lett. 55, 253 (1989); http://dx.doi.org/10.1063/1.102384 (3 pages) | Cited 4 times

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Thin films of Ge‐Si alloys were deposited by 193 nm photolysis of GeH4/Si2H6 gas mixtures using an ArF laser. For substrate temperatures below 350 °C, deposition occurred only with the laser present, while for temperatures above 400 °C, film growth was little influenced by laser photolysis and resembled conventional chemical vapor deposition (CVD). The Si/Ge ratio in the films was about three times the PSi2H6/PGeH4 ratio of reactant partial pressures for deposition in either the laser photolysis or the CVD regime. This result indicates that there is strong cross chemistry between silicon and germanium‐bearing species in the gas phase. Film stoichiometry was measured by Auger analysis and Raman spectroscopy, with both methods leading to the same film composition.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.55.Nq Composition and phase identification
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
82.50.Bc Processes caused by infrared radiation
82.50.Hp Processes caused by visible and UV light

Growth of epitaxial NiSi2 on Si(111) at room temperature

R. T. Tung and F. Schrey

Appl. Phys. Lett. 55, 256 (1989); http://dx.doi.org/10.1063/1.102385 (3 pages) | Cited 30 times

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Epitaxial type B NiSi2 thin layers have been grown at room temperature on Si(111). Deposition of a few monolayers of nickel followed by codeposition of NiSi2 has led to the growth of high quality single‐crystal layers, with ion channeling χmin <2%. No disorder was found at the interfaces of these layers. The topography of the original substrate has a predominant effect on the structure of line defects at the NiSi2 interface. Codeposition at room temperature on annealed silicide thin layers also led to the overgrowth of high quality NiSi2. These results are suggestive of type B NiSi2 formation on Si(111) upon deposition of a few monolayers of nickel at room temperature.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.35.B- Structure of clean surfaces (and surface reconstruction)
61.85.+p Channeling phenomena (blocking, energy loss, etc.)
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Schottky diodes on hydrogen plasma treated n‐GaAs surfaces

A. Paccagnella, A. Callegari, E. Latta, and M. Gasser

Appl. Phys. Lett. 55, 259 (1989); http://dx.doi.org/10.1063/1.101922 (3 pages) | Cited 29 times

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The characteristics of Schottky diodes on n‐GaAs fabricated after an in situ low‐pressure rf H2 plasma treatment have been investigated as a function of the substrate temperature during the plasma treatment. Degraded rectifying characteristics result after room‐temperature treatments, while diodes with ideality factor as low as 1.01 were achieved in the temperature range 160–240 °C. An increase in barrier height was also observed with increasing substrate temperature during plasma treatment. The contact properties are correlated to H diffusion in a surface layer of GaAs, which passivates the dopant atoms and defect sites.
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73.30.+y Surface double layers, Schottky barriers, and work functions
81.65.-b Surface treatments
73.40.Ns Metal-nonmetal contacts
81.40.Rs Electrical and magnetic properties related to treatment conditions

Photocurrent collection in a Schottky barrier on an amorphous silicon‐germanium alloy structure with 1.23 eV optical gap

V. Chu, J. P. Conde, D. S. Shen, and S. Wagner

Appl. Phys. Lett. 55, 262 (1989); http://dx.doi.org/10.1063/1.101923 (3 pages) | Cited 11 times

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We report the result of voltage‐dependent photocurrent collection measurements in Pd Schottky barriers on an undoped a‐Si,Ge:H,F multilayer alloy structure with an effective optical gap of 1.23 eV. The hole mobility‐lifetime product (μτ)p, extracted from a fit of the voltage dependence of the photocurrent to the Hecht expression, is 7×10−9 cm2 V−1. Our result is an important indication that it is possible to produce the low‐gap a‐Si,Ge:H,F alloys with the optoelectronic characteristics needed for efficient tandem solar cells.
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73.30.+y Surface double layers, Schottky barriers, and work functions
85.30.Hi Surface barrier, boundary, and point contact devices
73.50.Pz Photoconduction and photovoltaic effects
84.60.Jt Photoelectric conversion

Generation of misfit dislocations in GaAs grown on Si

H. L. Tsai and R. J. Matyi

Appl. Phys. Lett. 55, 265 (1989); http://dx.doi.org/10.1063/1.101924 (3 pages) | Cited 39 times

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The misfit dislocation configurations in initial GaAs islands grown on silicon were studied by high‐resolution electron microscopy. Misfit dislocations, especially 60° type and stacking faults, were observed to generate from near the edges of the islands. Large steps on the substrate surface were observed to help the nucleation of these dislocations. The presence of threading dislocations in thicker films is attributed to the misfit dislocation segments in initial GaAs islands. A mechanism is proposed to explain the propagation and multiplication of misfit dislocations during the coalescence of islands and their subsequent growth.
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61.72.Bb Theories and models of crystal defects
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.35.Dv Composition, segregation; defects and impurities

Pseudomorphic ZnTe/AlSb/GaSb heterostructures by molecular beam epitaxy

D. L. Mathine, S. M. Durbin, R. L. Gunshor, M. Kobayashi, D. R. Menke, Z. Pei, J. Gonsalves, N. Otsuka, Q. Fu, M. Hagerott, and A. V. Nurmikko

Appl. Phys. Lett. 55, 268 (1989); http://dx.doi.org/10.1063/1.101925 (3 pages) | Cited 12 times

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A series of pseudomorphic ZnTe/AlSb/GaSb epilayer/epilayer heterostructures, aimed at the realization of novel wide band‐gap light‐emitting devices, was grown by molecular beam epitaxy. The structures were evaluated by several techniques including transmission electron microscopy (TEM), x‐ray rocking curves, photoluminescence (PL), and Raman spectroscopy. Reflection high‐energy electron diffraction intensity oscillations were observed during nucleation of ZnTe. The presence of dislocation‐free pseudomorphic structures was confirmed by TEM. The PL spectra of ZnTe epilayers showed dominant near‐band‐edge features composed of free and shallow impurity bound excitons.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
85.60.Jb Light-emitting devices

High‐power disorder‐defined coupled stripe AlyGa1−yAs‐GaAs‐InxGa1−xAs quantum well heterostructure lasers

J. S. Major, D. C. Hall, L. J. Guido, N. Holonyak, P. Gavrilovic, K. Meehan, J. E. Williams, and W. Stutius

Appl. Phys. Lett. 55, 271 (1989); http://dx.doi.org/10.1063/1.101926 (3 pages) | Cited 14 times

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Data are presented describing continuous (cw) room‐temperature laser operation of AlyGa1−yAs‐GaAs‐InxGa1−xAs quantum well heterostructure (QWH) phase‐locked arrays. The ten‐stripe arrays have 3 μm emitters, with emitter to emitter spacing of 4 μm, and are patterned onto the QWH crystal using a self‐aligned Si‐O impurity‐induced layer disordering (IILD) procedure. The IILD process is devised to provide limited layer intermixing to ensure optical coupling (across ∼1 μm). The coupled stripe QWH lasers exhibit narrow twin‐lobed far‐field patterns that show unambiguously phase locking in the highest order supermode. The cw output power of the lasers (differential quantum efficiency 52%) is shown from threshold (∼75 mA) to over 280 mW (both facets, no optical coatings).
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
78.45.+h Stimulated emission
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Effects of stress on the electrical activation of implanted Si in GaAs

L. S. Vanasupa, M. D. Deal, and J. D. Plummer

Appl. Phys. Lett. 55, 274 (1989); http://dx.doi.org/10.1063/1.101927 (3 pages) | Cited 9 times

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The effects of various plasma‐enhanced chemical vapor deposition SiNx encapsulating films on the electrical activation of ion‐implanted 29Si+ in GaAs were investigated. Films inducing the most tensile stress in the GaAs resulted in the lowest activation efficiency and films inducing the most compressive resulted in the highest. The results suggest that ratio of donors to acceptors, SiGa@B:SiAs, is a sensitive function of the stress state during the activation anneal.
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81.40.Rs Electrical and magnetic properties related to treatment conditions
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.20.Hb Impurity and defect levels; energy states of adsorbed species

Interaction of Ce with Si (100)

F. U. Hillebrecht

Appl. Phys. Lett. 55, 277 (1989); http://dx.doi.org/10.1063/1.101908 (3 pages) | Cited 14 times

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The interaction of Ce with Si (100) surfaces has been studied qualitatively by photoemission with synchrotron radiation. For coverages of a few monolayers the reaction yields a disordered phase with a wide variation of Si‐Ce coordinations which do not depend on the distance from the surface. For coverages above 5 monolayers a mixed phase of Ce and a Ce silicide is found. Segregation of a Si‐like phase to the surface does not take place.
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68.35.Fx Diffusion; interface formation
68.35.Dv Composition, segregation; defects and impurities
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Identification of Pb‐doped Bi‐Sr‐Ca‐Cu‐O superconducting phases by convergent beam electron diffraction

K. K. Fung, C. Y. Yang, and Y. F. Yan

Appl. Phys. Lett. 55, 280 (1989); http://dx.doi.org/10.1063/1.102386 (3 pages) | Cited 7 times

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Pb‐doped Bi2Sr2Ca2Cu3O10 (2223) and Bi2 Sr2 Ca3 Cu4 O12 (2234) superconducting phases have been identified by convergent beam electron diffraction. The c parameters of the 2223 and 2234 phases are 37.6 and 44 Å, respectively. The two phases have the same symmetry; their common point group is mmm. Both phases are modulated, but the modulations are different from and considerably weaker than that in the unleaded Bi2 Sr2 CaCu2 O8 . This work confirms for the first time the existence of the 2234 phase.
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74.70.-b Superconducting materials other than cuprates
74.10.+v Occurrence, potential candidates
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