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31 Jul 1989

Volume 55, Issue 5, pp. 415-514

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Novel method to fabricate corrugation for a λ/4‐shifted distributed feedback laser using a grating photomask

M. Okai, S. Tsuji, N. Chinone, and T. Harada

Appl. Phys. Lett. 55, 415 (1989); http://dx.doi.org/10.1063/1.101882 (3 pages) | Cited 15 times

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A novel method was developed to fabricate corrugation for a λ/4‐shifted distributed feedback (DFB) laser. Mechanically ruled grating patterns were transferred photolithographically to the surface of an InP substrate. The resultant λ/4‐shifted DFB laser operated in a single longitudinal mode at the Bragg wavelength.
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42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.By Design of specific laser systems

Timing synchronization of a passively mode‐locked dye laser using a pulsed optical phase lock loop

S. P. Dijaili, J. S. Smith, and A. Dienes

Appl. Phys. Lett. 55, 418 (1989); http://dx.doi.org/10.1063/1.101883 (3 pages) | Cited 8 times

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Timing sychronization between a colliding‐pulse mode‐locked dye laser and a gain‐switched Fabry–Perot‐type AlGaAs laser diode has been achieved with less than 40 fs of relative timing jitter by using a pulsed optical phase lock loop. The relative timing jitter was measured using the error voltage of the feedback loop which has a 5 kHz bandwidth. This technique of measuring the relative timing jitter is accurate since the frequencies of all the timing fluctuations fall within the loop bandwidth. The novel element in the implementation of the pulsed optical phase lock loop is the time delay discriminator which is based on a cross correlation between the two pulse trains. Under locked conditions, the output of the cross correlator operates quiescently about a point of nonzero temporal slope.
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42.60.Fc Modulation, tuning, and mode locking
42.55.Mv Dye lasers
42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers

Theory for the etching of organic materials by ultraviolet laser pulses

R. Sauerbrey and G. H. Pettit

Appl. Phys. Lett. 55, 421 (1989); http://dx.doi.org/10.1063/1.101884 (3 pages) | Cited 64 times

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A theoretical description of the ultraviolet laser etching process is developed. The threshold for laser ablation is reached when the density of absorbed photons is approximately equal to the density of chromophores in the material. Saturation of the absorption coefficient, absorption by the plume of ablated products, and multiphoton effects are considered. Agreement with all available experimental etch data, including femtosecond ultraviolet laser ablation, is found. The description is based on an analysis of the radiation transport at high intensities and is independent of the question as to whether ultraviolet laser ablation is photochemical or thermal.
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81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
81.65.-b Surface treatments
79.20.Ds Laser-beam impact phenomena

Vertical cavity single quantum well laser

J. L. Jewell, K. F. Huang, K. Tai, Y. H. Lee, R. J. Fischer, S. L. McCall, and A. Y. Cho

Appl. Phys. Lett. 55, 424 (1989); http://dx.doi.org/10.1063/1.101885 (3 pages) | Cited 36 times

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We have achieved room‐temperature pulsed and cw lasing at 980 nm in an optically pumped vertical cavity structure grown by molecular beam epitaxy containing only a single quantum well (SQW) of In0.2Ga0.8As. Limited gain due to the extremely short active material length of 80 Å implies that losses due to absorption, scattering, and mirror transmission are extremely low. Using 10 ps pump pulses at 860 or 880 nm, the estimated energy density absorbed in the spacer was ∼12 fJ/μm2 at threshold, indicating a carrier density approximately four times that required for transparency. Continuous wave pumping yielded an estimated threshold absorbed intensity of ∼7 μW/μm2.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Leaky‐wave modes in nonlinear output prism couplers

L. Lin, T. Tamir, and K. M. Leung

Appl. Phys. Lett. 55, 427 (1989); http://dx.doi.org/10.1063/1.101886 (3 pages) | Cited 2 times

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By using the resonance property of modal fields, we derive leaky‐wave modes supported by nonlinear layered media of the Kerr type and apply the results to obtain the beam field emitted by an output prism coupler containing such a nonlinear layer.
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42.79.Gn Optical waveguides and couplers
42.79.Bh Lenses, prisms and mirrors
42.79.Fm Reflectors, beam splitters, and deflectors
63.10.+a General theory
42.25.Lc Birefringence

Pb1−xSrxS/PbS double‐heterostructure lasers prepared by hot‐wall expitaxy

A. Ishida, K. Muramatsu, H. Takashiba, and H. Fujiyasu

Appl. Phys. Lett. 55, 430 (1989); http://dx.doi.org/10.1063/1.101887 (2 pages) | Cited 12 times

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Pb1−xSrxS/PbS double‐heterostructure stripe contact lasers were prepared for the first time using a hot‐wall expitaxy technique. The laser operated up to 245 K pulsed (2.97 μm) and 174 K cw, which are the highest operating temperatures ever reported for any semiconductor diode lasers operating around 3 μm. In this letter preparation and properties of the Pb1−xSrxS lasers are presented.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.By Design of specific laser systems
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Characteristics of rare‐earth element erbium implanted in silicon

Y. S. Tang, K. C. Heasman, W. P. Gillin, and B. J. Sealy

Appl. Phys. Lett. 55, 432 (1989); http://dx.doi.org/10.1063/1.101888 (2 pages) | Cited 66 times

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Rare‐earth element erbium implanted into silicon was studied by photoluminescence and Rutherford backscattering analysis. Two sets of luminescent bands related to the weakly crystal field split spin‐orbit levels 4I13/2→4I15/2 of Er 3+ (4f 11) at different lattice sites having different symmetries were observed.
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61.72.uf Ge and Si
78.55.Hx Other solid inorganic materials
71.70.Ch Crystal and ligand fields
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Electromagnetic acoustic head waves in piezoelectric media

Yuan Liu, Cheng‐hao Wang, and C. F. Ying

Appl. Phys. Lett. 55, 434 (1989); http://dx.doi.org/10.1063/1.102426 (3 pages)

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A transient line source, either mechanical or electrical, on the surface of a piezoelectric medium will excite electromagnetic acoustic (EMAC) head waves between quasi‐electromagnetic surface disturbances and quasi‐acoustic waves. EMAC head waves are acoustic in nature, with plane fronts practically parallel to the surface and traveling at acoustic speeds. One such plane wave front is observed experimentally in a thick lead titanate‐zirconate plate in accordance with theory.
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62.30.+d Mechanical and elastic waves; vibrations
43.20.Px Transient radiation and scattering
77.65.-j Piezoelectricity and electromechanical effects
62.60.+v Acoustical properties of liquids

Reactive ion etching of diamond

G. S. Sandhu and W. K. Chu

Appl. Phys. Lett. 55, 437 (1989); http://dx.doi.org/10.1063/1.101890 (2 pages) | Cited 43 times

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A reliable means of removing surface layers of diamond is of significant importance for microelectronics as well as for other applications such as polishing of the diamond surface. Preliminary studies using reactive ion etching with O2 and H2 showed etching rates of the order of 560 Å/min for thin carbon films and 350 Å/min for natural type II‐A diamonds using 300 eV oxygen ions. Addition of a substantial percentage of Ar to oxygen in the reaction chamber did not affect the etching rate.
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81.65.-b Surface treatments
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Scanning force microscopy using a simple low‐noise interferometer

A. J. den Boef

Appl. Phys. Lett. 55, 439 (1989); http://dx.doi.org/10.1063/1.101891 (3 pages) | Cited 18 times

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A force microscope is described that can be used for high‐resolution surface profiling and for observing magnetic domains. The microscope uses a Michelson interferometer to sense the vibration of a cantilever. The interferometer contains some straightforward processing to eliminate laser intensity noise. Some measuring results are presented that illustrate the performance of the microscope.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
07.60.Ly Interferometers
75.60.Ch Domain walls and domain structure
07.50.-e Electrical and electronic instruments and components

Stability of boron‐ and gallium‐induced surface structures on Si(111) during deposition and epitaxial growth of silicon

R. L. Headrick, L. C. Feldman, and I. K. Robinson

Appl. Phys. Lett. 55, 442 (1989); http://dx.doi.org/10.1063/1.101869 (3 pages) | Cited 30 times

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We have undertaken a new set of experiments to investigate the behavior of adsorbed‐impurity induced reconstructions at growth interfaces. We have observed a striking difference in the stability of the B(3)1/2×(3)1/2 and Ga(3)1/2×(3)1/2 two‐dimensional structures at the interface between Si(111) and a‐Si, and in their segregation behavior during molecular beam epitaxy crystal growth. This leads to a new model of dopant behavior in silicon molecular beam epitaxy.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.35.Dv Composition, segregation; defects and impurities

Direct evidence for self‐annihilation of antiphase domains in GaAs/Si heterostructures

O. Ueda, T. Soga, T. Jimbo, and M. Umeno

Appl. Phys. Lett. 55, 445 (1989); http://dx.doi.org/10.1063/1.101870 (3 pages) | Cited 29 times

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The nature and behavior of antiphase boundaries in GaAs/Si heterostructures using GaP, GaP/GaAsP, and GaAsP/GaAs strained‐layer superlattices as intermediate layers have been studied by transmission electron microscopy. The antiphase domains are found to be very complicated three‐dimensional polygons consisting of several subboundaries in different orientations. Self‐annihilation of antiphase domains during crystal growth of GaAs on (001) 0.4° off or (001) 2° off Si substrates is directly observed for the first time through plan‐view and cross‐sectional observations. Based on these findings, a mechanism of annihilation of these domains is presented.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
68.35.Rh Phase transitions and critical phenomena
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
61.72.Nn Stacking faults and other planar or extended defects

Transmission electron microscopy of short‐period Si/Ge strained‐layer superlattices on Ge substrates

W. Wegscheider, K. Eberl, H. Cerva, and H. Oppolzer

Appl. Phys. Lett. 55, 448 (1989); http://dx.doi.org/10.1063/1.101871 (3 pages) | Cited 16 times

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Structural investigations of high quality Si/Ge strained‐layer superlattices (SLSs) on [001] oriented Ge substrates prepared by molecular beam epitaxy are presented. Cross‐sectional transmission electron microscopy reveals that a defect‐free superlattice is achieved for a structure composed of a 20‐period sequence of 3 monolayers (ML) Si and 9 ML Ge. High‐resolution lattice images and electron diffraction patterns show that the whole structure is matched to the Ge substrate. Experimental values for the tetragonal deformation of the Si layers within the SLS are in good agreement with theory. An equivalent sample containing 120 periods exceeds the critical thickness for pseudomorphic growth of the SLS and shows the formation of twin lamellae.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.35.Fx Diffusion; interface formation
68.55.-a Thin film structure and morphology

Carbon reduction in GaAs films grown by laser‐assisted metalorganic molecular beam epitaxy

R. Iga, H. Sugiura, T. Yamada, and K. Wada

Appl. Phys. Lett. 55, 451 (1989); http://dx.doi.org/10.1063/1.101872 (3 pages) | Cited 15 times

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Secondary‐ion mass spectroscopy and cathodoluminescence (CL) studies were carried out on GaAs films grown by Ar+ laser‐assisted metalorganic molecular beam epitaxy. The Ar+ laser irradiation leads to the formation of a 400‐μm‐diam spot. In the growth temperature range 425–500 °C, the carbon concentration within the spot is maintained at 1017 cm−3, while that in the area not irradiated by the laser increases from 1017 to 1019 cm−3. The process of decomposition of the triethylgallium molecules and the mechanism by which the carbon concentration is maintained by the laser irradiation are discussed in detail. Low‐temperature CL spectra revealed that the CL signal intensity in the selectively grown spot was some ten times greater than that in the area not irradiated by the laser.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.61.Ey III-V semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Optical blue shift in a double quantum well structure under an electric field

Domenico Campi and Claude Alibert

Appl. Phys. Lett. 55, 454 (1989); http://dx.doi.org/10.1063/1.101850 (3 pages) | Cited 10 times

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A calculation for an effective mass model of a double quantum well structure subjected to a moderate electric field is presented. The behavior of the transitions between energy levels is investigated, allowing prediction of an effective blue shift in the optical spectrum of this simple system. It is suggested that the optimum strategy for obtaining a rapid effect is to reduce the coupling between the heavy hole states.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Extremely high electron mobility in a GaAs‐GaxIn1−xP heterostructure grown by metalorganic chemical vapor deposition

M. Razeghi, M. Defour, F. Omnes, M. Dobers, J. P. Vieren, and Y. Guldner

Appl. Phys. Lett. 55, 457 (1989); http://dx.doi.org/10.1063/1.101851 (3 pages) | Cited 31 times

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On studying the magnetoresistivity of GaAs‐GaInP heterostructures grown by low‐pressure metalorganic chemical vapor deposition in magnetic fields up to 12 T and at liquid‐helium temperatures, we have observed extremely high electron mobilities. Using the persistent photoconductivity effect, by illumination with red light, we reached a mobility of 780 000 cm2/(V s) at an electron density of 4.1×1011 cm−2. This high electron mobility is confirmed by cyclotron resonance measurements.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
73.61.Ey III-V semiconductors
73.50.Pz Photoconduction and photovoltaic effects

Subpicosecond photoluminescence from radiation‐damaged Ga0.47In0.53As

R. A. Höpfel, N. Sawaki, and E. Wintner

Appl. Phys. Lett. 55, 460 (1989); http://dx.doi.org/10.1063/1.101852 (3 pages) | Cited 2 times

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The luminescence of photoexcited carriers far above the band gap of Ga0.47In0.53As is studied with subpicosecond time resolution. In undamaged material the luminescence decays with characteristic times of 2–4 ps in the energy range between 1.9 and 1.4 eV, due to the rapid energy relaxation of electrons and holes far above the band edges. In radiation‐damaged (He+ bombarded) material, luminescence decay times as short as 0.9 ps are observed. The luminescence spectra give evidence for extreme nonequilibrium distributions of the photoexcited carriers, caused by the ultrafast recombination, which—in radiation‐damaged samples—is a faster process than energy relaxation.
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78.55.Cr III-V semiconductors
78.47.-p Spectroscopy of solid state dynamics
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Carbon incorporation in ZnSe grown by metalorganic chemical vapor deposition

Konstantinos P. Giapis, Klavs F. Jensen, J. E. Potts, and Steven J. Pachuta

Appl. Phys. Lett. 55, 463 (1989); http://dx.doi.org/10.1063/1.101853 (3 pages) | Cited 8 times

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Carbon incorporation in ZnSe films grown by metalorganic chemical vapor deposition is reported. Secondary‐ion mass spectrometry measurements in ZnSe films grown from methylallylselenide and dimethylzinc show an enhanced carbon accumulation at the interface between ZnSe and GaAs. The carbon incorporation in the bulk ZnSe increases with the VI/II ratio and for a value of VI/II=3–4, the amount of incorporated carbon abruptly jumps to concentrations of 1021 cm−3, whereupon the films become polycrystalline. A new shallow peak IC at 2.7920 eV dominates the near‐band‐edge low‐temperature photoluminescence spectra of all carbon‐contaminated ZnSe films. The intensity and linewidth of IC increase with the VI/II ratio in a similar manner to the carbon concentration. This peak is proposed to be due to the radiative decay of excitons bound to a complex defect, which is associated with the presence of carbon in the films.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.55.Et II-VI semiconductors

Dual‐transistor method to determine threshold‐voltage shifts due to oxide‐trapped charge and interface traps in metal‐oxide‐semiconductor devices

D. M. Fleetwood

Appl. Phys. Lett. 55, 466 (1989); http://dx.doi.org/10.1063/1.101854 (3 pages) | Cited 8 times

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A new technique is proposed to evaluate the radiation response of metal‐oxide‐semiconductor (MOS) transistors. The method requires that otherwise identical n‐ and p‐channel transistors be irradiated under the same conditions. Using assumptions similar to those of widely accepted ‘‘single‐transistor’’ methods, standard threshold‐voltage and mobility measurements are combined to accurately estimate threshold‐voltage shifts due to oxide‐trapped charge and interface traps. This approach is verified for several MOS processes. The dual‐transistor method can be applied to devices with much larger parasitic leakage, and at shorter times following a radiation pulse, than subthreshold current or charge‐pumping techniques.
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85.30.Tv Field effect devices
78.70.-g Interactions of particles and radiation with matter
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.30.De Semiconductor-device characterization, design, and modeling

Growth of Cd1−xMnxTe films by pulsed laser evaporation and epitaxy

J. M. Wrobel and J. J. Dubowski

Appl. Phys. Lett. 55, 469 (1989); http://dx.doi.org/10.1063/1.101855 (3 pages) | Cited 14 times

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Epitaxial layers of (111) Cd1−xMnxTe (x=0.05) were grown on (111) GaAs substrates by pulsed laser evaporation and epitaxy. A XeCl excimer laser beam was directed at a Cd0.95Mn0.05Te target to produce the vapors necessary for deposition. A simultaneously operating pulse Nd:YAG laser was used to create the overpressure of Cd needed in the growth of stoichiometric films. In situ reflection high‐energy electron diffraction, as well as scanning electron microscopy, energy‐dispersive x‐ray analysis, and photoluminescence study showed that the films had characteristics comparable to the best CdMnTe epilayers grown so far by molecular beam epitaxy or metalorganic chemical vapor deposition.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.55.Nq Composition and phase identification
78.55.Et II-VI semiconductors

Formation of laterally propagating supersteps of InP/InGaAs on vicinal wafers

H. M. Cox, P. S. Lin, A. Yi‐Yan, K. Kash, M. Seto, and P. Bastos

Appl. Phys. Lett. 55, 472 (1989); http://dx.doi.org/10.1063/1.101856 (3 pages) | Cited 8 times

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We propose and demonstrate a technique for artifically bunching the atomic steps on a vicinal substrate to form supersteps of almost arbitrary height. The process involves the etching of a grating of parallel grooves on the surface of a vicinal substrate followed by epitaxial growth that fills the grooves. Steps of height proportional to the period of the grating and the substrate misorientation angle are formed. The technique is demonstrated on a macroscopic scale for the InP/InGaAs material system using chloride transport vapor levitation epitaxy, resulting in InGaAs wire‐like structures confined both horizontally and vertically by InP. The growth of quantum wires and laterally periodic superlattices should be possible using this technique with proper scaling of parameters.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.65.-b Surface treatments
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Comparative photoluminescence study of hydrogenation of GaAs, AlxGa1−xAs, and AlAs

L. Pavesi, D. Martin, and F. K. Reinhart

Appl. Phys. Lett. 55, 475 (1989); http://dx.doi.org/10.1063/1.101857 (3 pages) | Cited 11 times

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Low‐temperature photoluminescence (PL) measurements of GaAs, AlxGa1−xAs, and AlAs samples grown by molecular beam epitaxy have been carried out to study the effects of hydrogen diffusion. Following exposure to a hydrogen plasma, the PL spectra of AlxGa1−xAs change. In particular, direct gap AlxGa1−xAs shows a strong increase in the total PL intensity whereas the PL spectra of indirect gap AlxGa1−xAs show an increase in the excitonic‐related recombinations after hydrogenation; the binary compounds present less dramatic changes. We interpret our results in terms of hydrogen passivation of deep and shallow centers (DX), whose densities are higher for aluminum concentration near the direct to the indirect gap crossover.
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78.55.Cr III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
71.35.-y Excitons and related phenomena
73.20.Hb Impurity and defect levels; energy states of adsorbed species

Spike train generation and current‐to‐frequency conversion in silicon diodes

D. D. Coon and A. G. U. Perera

Appl. Phys. Lett. 55, 478 (1989); http://dx.doi.org/10.1063/1.101858 (3 pages) | Cited 4 times

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A device physics model is developed to analyze spontaneous neuron‐like spike train generation in current driven silicon p+‐n‐n+ devices in cryogenic environments. The model is shown to explain the very high dynamic range (107) current‐to‐frequency conversion and experimental features of the spike train frequency as a function of input current. The devices are interesting components for implementation of parallel asynchronous processing adjacent to cryogenically cooled focal planes because of their extremely low current and power requirements, their electronic simplicity, and their pulse coding capability, and could be used to form the hardware basis for neural networks which employ biologically plausible means of information coding.
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85.30.De Semiconductor-device characterization, design, and modeling
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
87.10.-e General theory and mathematical aspects
89.70.-a Information and communication theory

Photoemissive scanning microscopy of doped regions on semiconductor surfaces

B. Quiniou, R. Scarmozzino, Z. Wu, and R. M. Osgood

Appl. Phys. Lett. 55, 481 (1989); http://dx.doi.org/10.1063/1.101859 (3 pages) | Cited 1 time

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Photoelectric emission induced by a focused UV laser beam (λ=257 nm) has been used to probe semiconductor surfaces. It was possible to distinguish between regions of different doping levels on a silicon surface. The spatial resolution was found to be limited only by the laser beam spot size.
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68.35.Dv Composition, segregation; defects and impurities
68.37.-d Microscopy of surfaces, interfaces, and thin films
81.65.-b Surface treatments

Optical window in strained‐layer Si/Ge microstructures

Michael Gell

Appl. Phys. Lett. 55, 484 (1989); http://dx.doi.org/10.1063/1.101860 (2 pages) | Cited 18 times

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Theoretical predictions are presented of electronic and optical properties of the Si/Ge (2:6) superlattice grown on (001) SiGe buffers. It is shown that the buffer layer on which the superlattice is grown controls the polarization isotropy of the fundamental cross‐gap transition and may be used to engineer an optical window for direct gap behavior.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
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