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31 Jul 1989

Volume 55, Issue 5, pp. 415-514

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Preferential growth of [001] twist boundaries in the Bi‐Sr‐Ca‐Cu‐O superconductor

Yutaka Takahashi, Minoru Mori, and Yoichi Ishida

Appl. Phys. Lett. 55, 486 (1989); http://dx.doi.org/10.1063/1.102427 (3 pages) | Cited 3 times

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High voltage electron microscopy showed that a [001] twist boundary is abundant in the Bi‐Sr‐Ca‐Cu‐O superconductor when it is prepared by a solid‐state reaction method. It is certain that coincidence orientation boundaries such as ∑=13 and ∑=17 are preferred.
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68.70.+w Whiskers and dendrites (growth, structure, and nonelectronic properties)
74.70.-b Superconducting materials other than cuprates
81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation
74.78.Fk Multilayers, superlattices, heterostructures

Transient response of quasiparticle injected superconducting links

R. Sprik, W. J. Gallagher, S. I. Raider, B. Bumble, and C.‐C. Chi

Appl. Phys. Lett. 55, 489 (1989); http://dx.doi.org/10.1063/1.101861 (3 pages) | Cited 1 time

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We have fabricated submicron injection‐controlled NbN links with gain and measured their injection‐triggered superconducting‐to‐normal transition to occur in 0.5–2.6 ns at 4 K, governed by condensate dynamics. The transient pulse shape displays a rising‐edge kinetic‐inductance spike and a strong dependence on the amplitude of the injected quasiparticle current similar to microbridges driven by supercritical currents. A modified dynamic effective‐temperature model is used to interpret the transient time and the pulse shape.
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85.25.Qc Superconducting surface acoustic wave devices and other superconducting devices
74.50.+r Tunneling phenomena; Josephson effects

Fabrication of YBa2Cu3O7−y superconducting coatings by electrophoretic deposition

C. T. Chu and B. Dunn

Appl. Phys. Lett. 55, 492 (1989); http://dx.doi.org/10.1063/1.102428 (3 pages) | Cited 30 times

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Coatings of YBa2Cu3O7−y were deposited by electrophoresis on Cu, Ag, polycrystalline Al2O3, and single‐crystal MgO and YSZ substrates. Acetone was used as the electrophoretic vehicle and a field of 500 V/cm was applied in the deposition process. The deposited coatings were fired in air at or above 900 °C. For coatings on Ag, MgO(Ag), and YSZ(Ag) substrates, sharp superconducting transitions at ∼90 K were obtained. Intermediate layers were formed on Cu, Al2O3(Al), and YSZ(Ag) substrates as a result of interfacial reactions during firing. The interfacial reactions affected the superconducting transition and also led to the development of a preferred orientation in the coating.
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74.78.-w Superconducting films and low-dimensional structures
74.70.-b Superconducting materials other than cuprates
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
82.45.-h Electrochemistry and electrophoresis

High‐resolution patterning of high Tc superconductors

L. R. Harriott, P. A. Polakos, and C. E. Rice

Appl. Phys. Lett. 55, 495 (1989); http://dx.doi.org/10.1063/1.102429 (3 pages) | Cited 22 times

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We have used a 20 keV Ga focused ion beam to pattern superconducting submicrometer bridge structures in thin films of Ba2YCu3O7 material by physical sputtering. The technique can produce structures down to 0.5 μm or less in epitaxial films with no degradation in superconducting transition temperature (Tc) or critical current density (Jc). Photolithography was used to define a coarse pattern of 20‐μm‐wide and 50‐μm‐long strips, each wired for four‐terminal resistance measurements. Submicrometer constrictions were then milled by the focused ion beam to form weak‐link junctions with roughly 0.3 μm separating the superconducting banks. We have demonstrated that focused ion beam micromachining is capable of producing submicrometer‐sized superconducting structures.
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81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.65.-b Surface treatments
85.25.Dq Superconducting quantum interference devices (SQUIDs)
74.78.-w Superconducting films and low-dimensional structures
74.70.-b Superconducting materials other than cuprates

As‐grown superconducting Bi(‐Pb)‐Sr‐Ca‐Cu‐O films by electron cyclotron resonance plasma sputtering

H. Masumoto, T. Goto, and T. Hirai

Appl. Phys. Lett. 55, 498 (1989); http://dx.doi.org/10.1063/1.101862 (3 pages) | Cited 13 times

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Bi(‐Pb)‐Sr‐Ca‐Cu‐O thin films were prepared on MgO(100) single‐crystal substrates by electron cyclotron resonance (ECR) plasma sputtering at substrate temperatures from room temperature to 590 °C. Pb‐doped superconducting as‐grown films were obtained above 560 °C. The Tc values of the Pb‐doped films prepared at 570–590 °C were 58–64 K which increased with increasing substrate temperature. Pb‐undoped as‐grown films obtained at 590 °C showed superconduction (Tc =30 K), but the films obtained below 580 °C were semiconductors. The grain sizes and contents of the 37 Å phase (110 K phase) were increased by the Pb doping into the as‐grown Bi‐Sr‐Ca‐Cu‐O films.
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74.78.-w Superconducting films and low-dimensional structures
74.25.Sv Critical currents
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition
81.15.Cd Deposition by sputtering
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Deposition and annealing of ion beam sputtered Y‐Ba‐Cu‐O superconducting films

S. D. Bernstein and R. W. Tustison

Appl. Phys. Lett. 55, 501 (1989); http://dx.doi.org/10.1063/1.102430 (3 pages) | Cited 5 times

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Highly oriented, near‐stoichiometric films of YBa2Cu3O7−δ have been deposited onto (100) MgO, (100) yttria‐stabilized zirconia, and (110) SrTiO3 by ion beam sputtering from a single, off‐stoichiometric target. Their crystal structure and resistance behavior were found to depend on the crystallization temperature of a two‐step post‐deposition anneal, which was varied from 750 to 1000 °C. The highest zero‐resistance temperature (73 K) and degree of preferred orientation was observed for a film which was deposited on (100) MgO and annealed for a short time at 950 °C.
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74.78.-w Superconducting films and low-dimensional structures
74.70.-b Superconducting materials other than cuprates
81.15.Cd Deposition by sputtering
68.55.-a Thin film structure and morphology

Superconducting films grown in situ by the activated reactive evaporation process

S. Prakash, D. M. Umarjee, H. J. Doerr, C. V. Deshpandey, and R. F. Bunshah

Appl. Phys. Lett. 55, 504 (1989); http://dx.doi.org/10.1063/1.101571 (3 pages) | Cited 7 times

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The low‐pressure activated reactive evaporation process was used successfully to grow superconducting thin films that were uniform in thickness, free of cracks, voids, spits, and other source‐related defects, and with mirror‐like surface smoothness. These are important considerations for the practical use of these materials in thin‐film form. No post‐deposition annealing was carried out. Tc (0) for films on yttria‐stabilized zirconia (YSZ) substrates is close to 80 K, and the (001) preferred orientation was observed with higher deposition temperatures in the range 550–650 °C. Films on silicon and sapphire substrates were adversely affected by interdiffusion, showing a Tc (0) of 56 and 72 K, respectively.
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74.78.-w Superconducting films and low-dimensional structures
74.70.-b Superconducting materials other than cuprates
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.55.-a Thin film structure and morphology

Oxygen ion irradiation of Tl2Ca2Ba2Cu3O10 superconductors

J. C. Barbour, J. F. Kwak, D. S. Ginley, and P. S. Peercy

Appl. Phys. Lett. 55, 507 (1989); http://dx.doi.org/10.1063/1.102431 (3 pages) | Cited 10 times

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The superconducting transport properties of polycrystalline Tl2Ca2Ba2Cu3O10 thin films irradiated with 740 keV oxygen ions were monitored as a function of fluence. Both the transition temperature (Tc ) and the critical current density (Jc ) decreased rapidly with fluence; however, the transition temperature onset remained constant. A fluence of 2×1014 O/cm2 (0.028 dpa) was sufficient to eliminate superconductivity in the films. Jc at 76 K decreased from 25 000 A/cm2 in the unirradiated sample to 2000 A/cm2 after a fluence of 2.1×1013 O/cm2. A room‐temperature anneal caused both Tc and the normal‐state resistivity to recover slightly after low‐fluence irradiations.
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74.25.Sv Critical currents
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition
74.70.-b Superconducting materials other than cuprates
74.78.-w Superconducting films and low-dimensional structures
74.20.Mn Nonconventional mechanisms
74.20.Rp Pairing symmetries (other than s-wave)

Periodic morphological modification developed on the surface of polyethersulfone by XeCl excimer laser photoablation

Hiroyuki Niino, Masashi Nakano, Shozaburo Nagano, Akira Yabe, and Tetsuro Miki

Appl. Phys. Lett. 55, 510 (1989); http://dx.doi.org/10.1063/1.101863 (3 pages) | Cited 27 times

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Periodic and stable micropatterns appeared on the surface of amorphous polyethersulfone etched with an excimer laser at 308 nm in ambient air and a vacuum. The control of such radiative conditions as fluence and incident angle enables us to modify the spacing and pattern of the microstructures. A topographical investigation with scanning electron microscopy and an experiment with x‐ray photoelectron spectroscopy to determine its composition is reported.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
79.20.Ds Laser-beam impact phenomena
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
81.65.-b Surface treatments
78.66.Qn Polymers; organic compounds
FREE

Comment on ‘‘Ion mixing of metal/Al bilayers near 77 K’’ [Appl. Phys. Lett. 54, 413 (1989)]

M. A. Z. Vasconcellos, J. A. T. Borges da Costa, W. H. Schreiner, and I. J. R. Baumvol

Appl. Phys. Lett. 55, 513 (1989); http://dx.doi.org/10.1063/1.101864 (2 pages) | Cited 5 times

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The correct mixing efficiency for the Fe/Al bilayer (900 keV Xe +3 , 77K) is presented in the context of the recent analysis by Ma, IE.E., Work man, W.L>, Johnson, W.L., and Nicolet, M.A. (AIP)
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61.80.Jh Ion radiation effects
68.35.Fx Diffusion; interface formation
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