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7 Aug 1989

Volume 55, Issue 6, pp. 519-603

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Cavity‐enhanced highly nondegenerate four‐wave mixing in GaAlAs semiconductor lasers

J. G. Provost and R. Frey

Appl. Phys. Lett. 55, 519 (1989); http://dx.doi.org/10.1063/1.101865 (3 pages) | Cited 15 times

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Highly nondegenerate four‐wave mixing (δω>100 GHz) has been observed in GaAlAs semiconductor lasers in the case where each of the pump, probe, and conjugate frequencies is close to that of a cavity mode. The high measured reflectivities (∼1000) have been demonstrated to depend on the relative position of the pump and probe cavity resonances. When the probe frequency was tuned, probe and conjugate spectra exhibited resonances on the cavity modes lying near the probe and conjugate frequencies. Such experiments may greatly help both in the modeling of laser action and in the measurement of laser parameters.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.60.Fc Modulation, tuning, and mode locking

Theoretical analysis of timing jitter in gain‐switched semiconductor lasers

E. Sano, M. Shinagawa, and R. Takahashi

Appl. Phys. Lett. 55, 522 (1989); http://dx.doi.org/10.1063/1.101866 (3 pages) | Cited 4 times

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We investigate the timing jitter in gain‐switched Fabry–Perot (FP) and distributed feedback (DFB) lasers based on the Langevin equations. Numerical results are in good agreement with measured ones. The present analysis demonstrates that the difference between the timing jitter in FP lasers and that in DFB lasers is caused by the difference in rapidity of turn‐on.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers

Synchronously pumped mode‐locked dye laser pumped by a frequency‐doubled mode‐locked and Q‐switched diode laser pumped Nd:YAG laser

G. T. Maker and A. I. Ferguson

Appl. Phys. Lett. 55, 525 (1989); http://dx.doi.org/10.1063/1.101867 (3 pages) | Cited 3 times

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We have developed a powerful and efficient mode‐locked and Q‐switched diode laser pumped Nd:YAG laser. Mode locking has been accomplished using intracavity frequency modulation (FM) to produce continuous‐wave mode‐locked pulses of 12 ps duration. Acousto‐optic pre‐lase Q switching has produced a train of pulses of about 25 ps average duration at a repetition rate of 360 MHz in an envelope of 75 ns duration. When pumped with a 500 mW diode laser array, the energy in the Q‐switched envelope was 15 μJ giving a peak power in the largest pulse of 19 kW. The laser has been frequency doubled in a crystal of potassium titanyl phosphate (KTP) with an efficiency of 36%. The doubled radiation at 532 nm has been used to synchronously pump a mode‐locked rhodamine 6G dye laser to produce a train of tunable pulses. The pulse duration of the dye laser was 3.2 ps and the peak power of the largest pulse in the train was 10 kW.
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42.55.Mv Dye lasers
42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers
42.55.-f Lasers

Calibration of scanning tunneling microscope transducers using optical beam deflection

G. C. Wetsel, S. E. McBride, R. J. Warmack, and B. Van de Sande

Appl. Phys. Lett. 55, 528 (1989); http://dx.doi.org/10.1063/1.101868 (3 pages) | Cited 19 times

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An accurate, sensitive, easily implemented method of calibration of the elastic displacement of piezoelectric transducers used in scanning tunneling microscopes has been developed. The axial displacement for both static and harmonic excitation has been measured using laser beam deflection amplified by an optical magnification system. For harmonic excitation where lock‐in amplifier detection can be utilized, displacements as small as 0.03 Å have been measured. Measurements on PZT‐5H and PZT‐8 transducers over a range of five orders of magnitude in applied voltage demonstrate the power of the method in calibration of displacements from the subangstrom to the nonlinear region with an uncertainty of about 4%.
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42.79.Hp Optical processors, correlators, and modulators
07.78.+s Electron, positron, and ion microscopes; electron diffractometers
43.38.Fx Piezoelectric and ferroelectric transducers

Integrated injection‐locked high‐power cw diode laser arrays

J. P. Hohimer, D. R. Myers, T. M. Brennan, and B. E. Hammons

Appl. Phys. Lett. 55, 531 (1989); http://dx.doi.org/10.1063/1.101845 (3 pages) | Cited 9 times

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We report the first integrated injection‐locked high‐power continuous‐wave diode laser array with an on‐chip independently controlled master laser. This device emits a near‐diffraction‐limited (0.5° full width at half maximum) single‐lobed far‐field emission beam at single‐facet powers up to 125 mW. Also, by current tuning the emission wavelength of the master laser, we observe steering of the single‐lobed emission over an angular range of 0.50° at a rate of −1.2×10−2 deg/mA. Our work demonstrates the feasibility of incorporating active optical injection and control in the structure of high‐power diode laser devices.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Mv Dye lasers

Theoretically predicted influence of donors and acceptors on quadratic hyperpolarizabilities in conjugated long‐chain molecules

Tetsuzo Yoshimura

Appl. Phys. Lett. 55, 534 (1989); http://dx.doi.org/10.1063/1.101846 (3 pages) | Cited 15 times

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The influence of the substitution positions of donors and acceptors on quadratic hyperpolarizabilities (β) was simulated by the AM1 method using four types of conjugated long‐chain molecules having polydiacetylene structures. The chain‐length dependences of β are greatly affected by the molecular type. The molecule, in which donor‐donor pairs and acceptor‐acceptor pairs alternately appear in the chain, has a narrow energy gap of about 1.6 eV and an exceptionally large β per 10 Å chain length, about 110 times larger than β of 2‐methyl‐4‐nitroaniline.
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33.15.Kr Electric and magnetic moments (and derivatives), polarizability, and magnetic susceptibility
36.20.Fz Constitution (chains and sequences)
78.20.Jq Electro-optical effects
36.20.Kd Electronic structure and spectra

High‐speed binary optically addressed spatial light modulator

G. Moddel, K. M. Johnson, W. Li, R. A. Rice, L. A. Pagano‐Stauffer, and M. A. Handschy

Appl. Phys. Lett. 55, 537 (1989); http://dx.doi.org/10.1063/1.101847 (3 pages) | Cited 36 times

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We describe the structure and operating characteristics of a high‐speed optically addressed spatial light modulator (OASLM) with a hydrogenated amorphous silicon (a‐Si:H) photosensor and a ferroelectric liquid‐crystal modulator. The photosensor is a p‐i‐n photodiode, which switches the liquid crystal into one of two stable states. Under a write‐light intensity of 6 mW/cm2, the OASLM exhibits a response time of 155 μs, a contrast ratio of 20:1, and a resolution of 40 lp/mm. The writing sensitivity per pixel is 0.1 pJ.
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42.79.Hp Optical processors, correlators, and modulators
85.60.-q Optoelectronic devices
72.80.Ng Disordered solids
61.30.-v Liquid crystals

Integrated external cavity GaAs/AlGaAs lasers using selective quantum well disordering

J. Werner, E. Kapon, N. G. Stoffel, E. Colas, S. A. Schwarz, C. L. Schwartz, and N. Andreadakis

Appl. Phys. Lett. 55, 540 (1989); http://dx.doi.org/10.1063/1.101848 (3 pages) | Cited 31 times

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Integrated external cavity GaAs/AlGaAs single quantum well lasers were fabricated by selective quantum well disordering. Lasers with 2.07‐mm‐long passive sections and 0.48‐mm‐long active sections had threshold currents of 33 mA, compared to 9.8 mA for lasers without passive sections. Lasing data indicate a residual modal loss of 11 cm−1 in the passive sections, consistent with direct waveguide loss measurements. Control composite structures with a nondisordered quantum well in the passive sections showed significantly higher threshold currents and a large red shift of as much as 11.4 nm in the lasing wavelength compared to lasers without a passive cavity. This red shift is the main reason for the reduced resonant losses in integrated external cavity lasers with a nondisordered quantum well in the passive section.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
42.79.Gn Optical waveguides and couplers

One‐way image transmission through a distorting medium using two holograms

Hee S. Lee and Henry Fenichel

Appl. Phys. Lett. 55, 543 (1989); http://dx.doi.org/10.1063/1.101849 (2 pages) | Cited 4 times

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A method is described for transmission of images through a distorter. The technique uses the principle of phase conjugation and employs two holograms. The conjugate of one of the reference beams acts as a carrier for the signal through the distorting medium.
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42.30.-d Imaging and optical processing
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.40.Lx Diffraction efficiency, resolution, and other hologram characteristics
42.25.Bs Wave propagation, transmission and absorption
42.25.Dd Wave propagation in random media

Photorefractive effect in La3Ga5SiO14‐Pr3+ piezoelectric crystals

V. M. Fridkin, A. A. Kaminskii, V. G. Lazarev, S. B. Astaf’ev, and A. V. Butashin

Appl. Phys. Lett. 55, 545 (1989); http://dx.doi.org/10.1063/1.102432 (2 pages) | Cited 14 times

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The pronounced photorefractive effect in La3Ga5SiO14‐Pr3+ crystals has been revealed. This is the first observation of the photorefraction caused by the bulk photovoltaic effect in a piezoelectric crystal. In accordance with symmetry features of the bulk photovoltaic effect in trigonal La3Ga5SiO14‐Pr3+, a value and a sign of the photorefraction depend on the orientation of an inducing light polarization vector. Experimental photorefraction data are in good agreement with phenomenological description. The discovered phenomenon may lead to interesting peculiarities in photorefractive recording and adaptive optics.
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78.20.Jq Electro-optical effects
78.20.Fm Birefringence
72.40.+w Photoconduction and photovoltaic effects
42.70.-a Optical materials

Si/SiO2 interface structures in laser‐recrystallized Si on SiO2

Atsushi Ogura and Naoaki Aizaki

Appl. Phys. Lett. 55, 547 (1989); http://dx.doi.org/10.1063/1.102433 (3 pages) | Cited 2 times

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Si/SiO2 interface structures in laser‐recrystallized Si on SiO2 were studied with a high‐resolution transmission electron microscope. The (001) Si/SiO2 interface with (001) Si substrate as a seed was excellent in flatness, flatter than that of the initial interface before recrystallization. However, the (115) Si/SiO2 interface with (115) Si substrate was saw‐toothed with {100}T and {111}T microfacets. After twin boundary generation, the interface was changed to {110}T or {111}T and was flattened considerably. A Si/SiO2 interface reaction occurred during laser recrystallization. Since low‐index Si planes are thought to have low interface energies with SiO2 at their interface, atomically flat or saw‐toothed interfaces appeared as a result of this interface reaction. Moreover, twin boundaries, rather than saw‐toothed interfaces, might have been generated for the reduction of the interface energy.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
68.55.-a Thin film structure and morphology
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Growth of textured diamond films on foreign substrates from attached seed crystals

M. W. Geis

Appl. Phys. Lett. 55, 550 (1989); http://dx.doi.org/10.1063/1.101830 (3 pages) | Cited 18 times

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A technique has been developed to grow (111) textured diamond films on smooth substrates using attached diamond seeds. The degree of texture is defined by the initial texture of the seeds. This initial texture depends upon the seed size and the cleaning procedure. Under the best conditions, over 90% of the seeds exhibit a (111) texture with a tip angle of less than 0.25°. Further growth of diamond on these seeds does not affect the texture, and diamond films obtained by such growth are expected to have smoother surfaces and more controlled doping than nontextured polycrystalline films.
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68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.10.Dn Growth from solutions
68.35.Md Surface thermodynamics, surface energies

Room‐temperature absorption study of CdTe‐ZnTe superlattices

Hadas Shtrikman, A. Riezman, R. Tenne, D. Mahalu, and E. Finkman

Appl. Phys. Lett. 55, 553 (1989); http://dx.doi.org/10.1063/1.101831 (3 pages)

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Room‐temperature photoconductivity measurements were carried out on metalorganic chemical vapor deposition grown CdTe‐ZnTe superlattices with a periodicity of 30–80 Å. The threshold of the photoconductivity measurements varied with the size of the well. Transition of the electron to the n=1 level in the conduction band was observed in all samples; the transition to the n=2 level was found for the superlattices with well width exceeding 25 Å. These findings agree very well with room‐temperature absorption measurements performed on the same superlattices and with model calculations which were based on the Kronig–Penney model with Bastard’s boundary conditions.
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73.50.Pz Photoconduction and photovoltaic effects
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Heteroepitaxial Si/Al2O3/Si structures

Makoto Ishida, Kazuaki Sawada, Shinsuke Yamaguchi, Tetsuro Nakamura, and Tetsuo Suzaki

Appl. Phys. Lett. 55, 556 (1989); http://dx.doi.org/10.1063/1.102434 (3 pages) | Cited 17 times

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A double‐heteroepitaxial Si/γ‐Al2O3/Si structure was realized. An epitaxial (100)Si layer with high quality was successfully grown on a (100)γ‐Al2O3/(100)Si substrate by Si2H6 gas‐source molecular beam epitaxy at substrate temperatures between 700 and 800 °C. The γ‐Al2O3/Si substrate was fabricated by low‐pressure chemical vapor deposition with Al(CH3 )3 and N2 O gases. The reflection high‐energy electron diffraction patterns of the 3000‐Å‐thick Si epitaxial layer indicated streaked 2×1 patterns. This Si film had a mirror‐like surface, and smooth surface morphology was observed from replica electron micrographs. From the Auger depth profile of the epitaxial layers, it was found that the double‐heteroepitaxial Si/Al2O3/Si structure had a sharper interface between Al2 O3 and the epitaxial Si film due to the low growth temperatures.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.35.B- Structure of clean surfaces (and surface reconstruction)

Optical investigation of the band structure of InAs/GaAs short‐period superlattices

J. M. Gerard, J. Y. Marzin, C. d’Anterroches, B. Soucail, and P. Voisin

Appl. Phys. Lett. 55, 559 (1989); http://dx.doi.org/10.1063/1.101832 (3 pages) | Cited 10 times

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We discuss optical data obtained on (InAs/GaAs)‐InGaAlAs multiquantum well structures grown by molecular beam epitaxy. The combined use of photoluminescence and photoluminescence excitation to study such structures is an efficient test of the quality of the highly strained InAs/GaAs ordered alloy, which is used as the well material. The electron effective mass and the lifting of the valence‐band degeneracy in InAs/GaAs short‐period superlattices are obtained experimentally for the first time.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
78.55.Cr III-V semiconductors

Control factor of native oxide growth on silicon in air or in ultrapure water

M. Morita, T. Ohmi, E. Hasegawa, M. Kawakami, and K. Suma

Appl. Phys. Lett. 55, 562 (1989); http://dx.doi.org/10.1063/1.102435 (3 pages) | Cited 78 times

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Native silicon (Si) oxide growth on Si (100) wafers in air and in ultrapure water at room temperature requires coexistence of water and oxygen in the air and ultrapure water ambients. The growth rate data on n‐, n+‐, and p+‐Si (100) in air indicate layer‐by‐layer growth of an oxide. The growth rate on n‐Si (100) in ultrapure water may be governed by a parabolic law. For native oxide growth in ultrapure water, the number of Si atoms dissolved in ultrapure water is over one order of magnitude larger than the number of Si atoms contained in the grown native oxide film. The structural difference between the native oxide film in air and in ultrapure water is also discussed.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.65.-b Surface treatments
77.55.-g Dielectric thin films
68.55.-a Thin film structure and morphology

Direct observation of discrete layers of dislocation loops near the projected ion ranges in high‐dose P+‐implanted (001)Si by cross‐sectional transmission electron microscopy

S. N. Hsu, L. J. Chen, and W. Y. Chao

Appl. Phys. Lett. 55, 565 (1989); http://dx.doi.org/10.1063/1.101833 (3 pages) | Cited 2 times

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The formation of discrete layers of dislocation loops near the projected ion ranges (Rp loops) of 65–80 keV, high‐dose (5×1015–2×1016/cm2) P+‐implanted (001)Si was observed by cross‐sectional transmission electron microscopy (XTEM). Both the energy and dose dependence of the annealing behaviors of Rp loops provided strong evidences that they are related to P clustering. The inactivation of dopants due to precipitation, hence the appearance of Rp loops, is correlated to the sheet resistance data. The retardation of the solid phase epitaxial growth was shown to be related to the formation of Rp loops. Using Rp loops as an indicator of changes in point‐defect distribution, a combined XTEM and plan‐view TEM study was found to be most appropriate for the study of the precipitation process in high‐dose P+‐implanted silicon.
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61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
61.72.uf Ge and Si
61.72.Bb Theories and models of crystal defects
81.15.Np Solid phase epitaxy; growth from solid phases

Ion‐implanted In0.1Ga0.9As metal‐semiconductor field‐effect transistors on GaAs (100) substrates

M. Feng, G. W. Wang, Y. P. Liaw, R. W. Kaliski, C. L. Lau, and C. Ito

Appl. Phys. Lett. 55, 568 (1989); http://dx.doi.org/10.1063/1.101834 (2 pages) | Cited 1 time

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Ion‐implanted In0.1Ga0.9As metal‐semiconductor field‐effect transistors (MESFETs) have been fabricated on 3 in. GaAs (100) substrates. The structure comprises an undoped InGaAs epitaxially layer grown directly on a GaAs (100) substrate by the metalorganic chemical vapor deposition (MOCVD) technique. Si+28 is ion implanted into the InGaAs layer to form an active channel layer. MESFETs with 100 μm gate width and 0.5 μm gate length are fabricated using standard process techniques. The best device shows a maximum transconductance of 426 mS/mm. From S‐parameter measurements, the current‐gain cutoff frequency ft is 37 GHz and the maximum available gain cutoff frequency fmax is 85 GHz. These results are comparable to InGaAs MESFETs grown by MBE.
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85.30.Tv Field effect devices
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.40.Ns Metal-nonmetal contacts
85.30.De Semiconductor-device characterization, design, and modeling

Low‐resistance nonalloyed ohmic contacts on p‐type GaAs using GaSb/GaAs strained‐layer superlattices

J.‐I. Chyi, J. Chen, N. S. Kumar, C. Kiely, C. K. Peng, A. Rockett, and H. Morkoç

Appl. Phys. Lett. 55, 570 (1989); http://dx.doi.org/10.1063/1.101835 (2 pages) | Cited 5 times

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Employing a GaSb/GaAs strained‐layer superlattice and a GaSb cap, specific contact resistivities as low as 3.2×10−7 Ω cm2 have been realized for nonalloyed ohmic contact to p‐type GaAs. This contact structure is shown to give low contact resistances irrespective of the contact metals, including AuBe, AuGe/Ni/Au, and Au. Excellent thermal stability for AuBe contacts was obtained when sintered.
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73.40.Cg Contact resistance, contact potential
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
68.60.Dv Thermal stability; thermal effects
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Effect of Si doping in AlAs barrier layers of AlAs‐GaAs‐AlAs double‐barrier resonant tunneling diodes

Peng Cheng and James S. Harris

Appl. Phys. Lett. 55, 572 (1989); http://dx.doi.org/10.1063/1.101836 (3 pages) | Cited 16 times

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AlAs‐GaAs‐AlAs double‐barrier resonant tunneling diodes (DBRTDs) with different doping levels in the AlAs layers have been investigated. Two‐step spacer layers were used in all samples. Peak‐to‐valley current ratios (PVCRs) as high as 3.5 (11.3), 3.5 (11.3), and 2.7 (8.2) were observed at 300 K (77 K) for samples with undoped, 1.2×1017 cm−3, and 3×1018 cm−3 doped AlAs barriers, respectively. These results indicate that resonant tunneling is not strongly affected by ionized Si atoms in the AlAs barriers. The excellent PVCRs observed in DBRTDs with two‐step spacer layers is not because of low background impurity densities in the active region, but because of a third barrier formed by band bending in the spacer layers.
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85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.40.Gk Tunneling
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Self‐compensation through a large lattice relaxation in p‐type ZnSe

D. J. Chadi and K. J. Chang

Appl. Phys. Lett. 55, 575 (1989); http://dx.doi.org/10.1063/1.101837 (3 pages) | Cited 64 times

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The energetics of self‐compensation through atomic relaxation around acceptor impurities in ZnSe were examined via first principles total energy calculations. We find large charge state and impurity‐dependent lattice relaxations for As and P acceptors which can account for the experimentally observed difficulties in obtaining low‐resistivity p‐type ZnSe from these dopants. A much smaller relaxation is found for Li.
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61.72.U- Doping and impurity implantation
71.55.Gs II-VI semiconductors
61.05.J- Electron diffraction and scattering
61.72.J- Point defects and defect clusters

Epitaxial growth of metastable SnGe alloys

M. T. Asom, E. A. Fitzgerald, A. R. Kortan, B. Spear, and L. C. Kimerling

Appl. Phys. Lett. 55, 578 (1989); http://dx.doi.org/10.1063/1.101838 (2 pages) | Cited 14 times

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We have grown homogeneous alloys of Sn1−xGex with 0.01<x<0.1 by molecular beam epitaxy on 〈100〉 InSb substrates. The Sn‐Ge system is immiscible due to differing equilibrium crystal structures at the growth temperature. By stabilizing the diamond cubic α‐Sn with the InSb template, we have created a metastable miscibility region for alloying Sn and Ge. Pure α‐Sn grown on 〈100〉 InSb shows a tetragonal expansion perpendicular to the substrate because of the slightly larger lattice parameter of α‐Sn. As the smaller Ge atom is added, the strain converts from compressive to tension resulting in an effective 1.66% tetragonal contraction in the growth direction for Sn0.92Ge0.08.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology
68.60.Bs Mechanical and acoustical properties
68.55.Nq Composition and phase identification

Defect‐induced Schottky barrier height modification by pulsed laser melting of GaAs

T. Zhang, T. W. Sigmon, K. H. Weiner, and P. G. Carey

Appl. Phys. Lett. 55, 580 (1989); http://dx.doi.org/10.1063/1.101839 (3 pages) | Cited 5 times

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A pulsed XeCl excimer laser (λ=308 nm) is used to melt n‐ and p‐type GaAs samples. Melt‐induced defects shift the surface Fermi level to a new pinning position at 0.58±0.04 eV below the conduction‐band minimum for both n‐ and p‐type samples. The Schottky barrier height of Au, deposited on the GaAs after laser irradiation, is increased by 0.38 eV (from 0.43 to 0.81 eV) for p‐type, and decreased by 0.30 eV (from 0.84 to 0.54 eV) for n‐type samples. In the post‐melted GaAs near‐surface region, four deep levels are found using deep level transient spectroscopy. The observation of minority‐carrier traps in the Schottky diode structures suggests the existence of minority‐carrier source. We speculate a compensated region forms near the GaAs surface. A bulk Fermi level stabilization model is used to explain the changes observed in the Schottky barrier heights.
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73.30.+y Surface double layers, Schottky barriers, and work functions
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
73.20.At Surface states, band structure, electron density of states
71.55.Eq III-V semiconductors

Electroabsorption and refraction by electron transfer in asymmetric modulation‐doped multiple quantum well structures

M. Wegener, T. Y. Chang, I. Bar‐Joseph, J. M. Kuo, and D. S. Chemla

Appl. Phys. Lett. 55, 583 (1989); http://dx.doi.org/10.1063/1.101840 (3 pages) | Cited 14 times

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We present a novel heterostructure that exhibits large electroabsorption and refraction. The structure is periodic with a stackable building block, thus it allows large contrast and waveguide operation. The mechanism used is the quenching of absorption produced by transfer of electrons from a reservoir into a quantum well. We demonstrate the principle by presenting differential absorption and refraction spectra on a ten‐period device.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
42.79.Gn Optical waveguides and couplers
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Structural and electrical properties of epitaxial Si on insulating substrates

G. A. Rozgonyi, Z. J. Radzimski, T. Higuchi, B. L. Jiang, D. M. Lee, T. Zhou, D. Schmidt, and J. Blake

Appl. Phys. Lett. 55, 586 (1989); http://dx.doi.org/10.1063/1.101841 (3 pages) | Cited 1 time

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In this work the role of extended defects on the electrical performance of epitaxial silicon on substrates containing an insulating SiO2 layer has been examined. The buried SiO2 layers in the substrates were obtained by two techniques: implantation of oxygen and zone melt recrystallization. In order to make a thorough structural and electrical evaluation of silicon on the insulator substrates, 5‐μm‐thick epitaxial capping layers have been simultaneously deposited via chemical vapor deposition on representative insulating substrates and reference wafers. The average minority‐carrier lifetime was found to vary from 2.5 to 242 μs depending on the density and distribution of dislocations emerging from the capping epitaxial layer.
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73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
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