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Applied Physics Letters / Volume 55 / Issue 6

Appl. Phys. Lett. 55, 540 (1989); http://dx.doi.org/10.1063/1.101848 (3 pages)

Integrated external cavity GaAs/AlGaAs lasers using selective quantum well disordering

J. Werner, E. Kapon, N. G. Stoffel, E. Colas, S. A. Schwarz, C. L. Schwartz, and N. Andreadakis

Bell Communications Research, Red Bank, New Jersey 07701

(Received 31 March 1989; accepted 30 May 1989)

Integrated external cavity GaAs/AlGaAs single quantum well lasers were fabricated by selective quantum well disordering. Lasers with 2.07‐mm‐long passive sections and 0.48‐mm‐long active sections had threshold currents of 33 mA, compared to 9.8 mA for lasers without passive sections. Lasing data indicate a residual modal loss of 11 cm−1 in the passive sections, consistent with direct waveguide loss measurements. Control composite structures with a nondisordered quantum well in the passive sections showed significantly higher threshold currents and a large red shift of as much as 11.4 nm in the lasing wavelength compared to lasers without a passive cavity. This red shift is the main reason for the reduced resonant losses in integrated external cavity lasers with a nondisordered quantum well in the passive section.

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KEYWORDS and PACS

Keywords

OPERATION, FABRICATION, LASER CAVITIES, SEMICONDUCTOR LASERS, THRESHOLD CURRENT, EXPERIMENTAL DATA, LASER RADIATION, GALLIUM ARSENIDES, ALUMINIUM ARSENIDES

PACS

  • 42.60.Da

    Resonators, cavities, amplifiers, arrays, and rings

  • 42.55.Px

    Semiconductor lasers; laser diodes

  • 42.79.Gn

    Optical waveguides and couplers

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.101848

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

For access to fully linked references, you need to log in.
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    K. Kojima, S. Noda, K. Mitsunga, and K. Kyuma, Appl. Phys. Lett. 50, 227 (1987APPLAB000050000005000227000001).

    W. D. Laidig, N. Holonyak, Jr., M. D. Camras, K. Hess, J. J. Coleman, P. D. Dapkus, and J. Bardeen, Appl. Phys. Lett. 38, 776 (1981APPLAB000038000010000776000001).

    J. Werner, E. Kapon, A. C. Von Lehmen, R. Bhat, E. Colas, N. G. Stoffel, and S. A. Schwarz, Appl. Phys. Lett. 53, 1693 (1988APPLAB000053000018001693000001).


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