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14 Aug 1989

Volume 55, Issue 7, pp. 607-704

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Micropolarizer made of the anodized alumina film

M. Saito, M. Kirihara, T. Taniguchi, and M. Miyagi

Appl. Phys. Lett. 55, 607 (1989); http://dx.doi.org/10.1063/1.101572 (3 pages) | Cited 57 times

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A novel micropolarizer has been fabricated from alumina and nickel by means of anodization and electroplating techniques. Making use of the anisotropic microstructure of the anodized alumina film, a lattice of nickel columns is easily constructed in the film, which works as a wire grid type polarizer. The fabricated polarizer has achieved an extinction ratio larger than 30 dB at the wavelength of 1.3 μm.
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42.79.Sz Optical communication systems, multiplexers, and demultiplexers
78.66.-w Optical properties of specific thin films
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
42.25.Dd Wave propagation in random media
42.25.Fx Diffraction and scattering
42.25.Ja Polarization
42.82.-m Integrated optics

Integration of a Faraday rotator and a mode selector for a magnetic field sensor

Kaoru Matsuda and Satoshi Ishizuka

Appl. Phys. Lett. 55, 610 (1989); http://dx.doi.org/10.1063/1.101825 (3 pages) | Cited 1 time

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We have demonstrated an integrated magnetic field sensor consisting of a Faraday rotator and a mode selector for the first time. The sensor is a loaded waveguide which has a waveguide layer made of a garnet with magneto‐optical effect for Faraday rotation and a metal clad layer for mode selection. The magnetic field can be measured by detecting the change of optical output power from the waveguide. An output power change of ±5% has been observed as the magnetic field is changed from zero to ±60 Oe.
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07.55.-w Magnetic instruments and components
07.07.Tw Servo and control equipment; robots
78.20.Ls Magneto-optical effects
42.79.Gn Optical waveguides and couplers

Spatial light modulation using surface plasmon resonance

Eric M. Yeatman and Martin E. Caldwell

Appl. Phys. Lett. 55, 613 (1989); http://dx.doi.org/10.1063/1.101826 (3 pages) | Cited 8 times

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A new type of spatial light modulator has been demonstrated, operating by the surface plasmon resonance effect. Devices have been constructed using nematic liquid crystal as the active material, and the operation of these devices is 50 times faster than the bulk switching of the liquid‐crystal cells. We have obtained resolution of 10–20 μm and contrast ratios better than 100:1.
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42.79.Hp Optical processors, correlators, and modulators
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)

Simple measuring method for electro‐optic coefficients in poled polymer waveguides

Winfried H. G. Horsthuis and Gijs J. M. Krijnen

Appl. Phys. Lett. 55, 616 (1989); http://dx.doi.org/10.1063/1.101827 (3 pages) | Cited 22 times

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A simple measuring technique for the linear electro‐optic coefficients in electro‐optic waveguides is described. The method is based on the direct evaluation of synchronous angle measurements obtained by prism coupling. No waveguide or electrode patterning is required. A model has been developed in order to simulate the relation between change in synchronous angle and applied electric field across the electro‐optic waveguide. The measured values of the electro‐optic coefficients in poled polymer waveguides are reported.
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78.20.Jq Electro-optical effects
42.79.Gn Optical waveguides and couplers
78.66.Qn Polymers; organic compounds
07.60.-j Optical instruments and equipment

Selective metallization of n‐type GaAs formed by projection‐patterned excimer laser doping of Si

K. Sugioka, K. Toyoda, Y. Gomi, and S. Tanaka

Appl. Phys. Lett. 55, 619 (1989); http://dx.doi.org/10.1063/1.101828 (3 pages) | Cited 5 times

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Resistless microfabrication of the metallization of n‐type GaAs formed by projection‐patterned doping using a KrF excimer laser is described. Silane (SiH4 ) gas is used as a source material of the n‐type dopant of Si. Copper thin films with a linewidth as narrow as 3.4 μm are deposited selectively on the doped region by electroplating using a CuSO4 aqueous solution. Using the selective metallization process, nonalloyed ohmic contacts can be formed with a specific contact resistance of 2.32×10−5 Ω cm2, which is one‐thirtieth of that of the conventional alloyed contacts.
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81.65.-b Surface treatments
73.40.Cg Contact resistance, contact potential
61.72.U- Doping and impurity implantation
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

In situ observation of molecular beam epitaxy of GaAs and AlGaAs under deficient As4 flux by scanning reflection electron microscopy

K. Yamada, N. Inoue, J. Osaka, and K. Wada

Appl. Phys. Lett. 55, 622 (1989); http://dx.doi.org/10.1063/1.101829 (3 pages) | Cited 12 times

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The initial stages of molecular beam epitaxial (MBE) growth of GaAs and AlGaAs are directly observed by scanning reflection electron microscopy. Under deficient As4 flux, it is shown that dark areas appear within several layers of growth, but disappear within several seconds of growth interruption, indicating that they are droplets of Ga and Al. The distance between the droplets is approximately 1 μm, which is identical in GaAs and AlGaAs growth. Thus, the diffusion length of Ga and Al on a group III‐rich surface at around 600 °C is estimated to be about 5000 Å, which is the largest among previous reports. The role of droplet disappearance in interface flattening in alternating supply MBE is discussed.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.35.Fx Diffusion; interface formation
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination

Submicron trenching of semiconductor nanostructures

K. Y. Lee, T. P. Smith, C. J. B. Ford, W. Hansen, C. M. Knoedler, J. M. Hong, and D. P. Kern

Appl. Phys. Lett. 55, 625 (1989); http://dx.doi.org/10.1063/1.101805 (3 pages) | Cited 5 times

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We have devised and demonstrated a novel technique for fabricating structures with nanometer scale features in semiconductor heterostructures. The technique is based on definition of nanometer scale patterns by submicron trenches in a GaAs‐AlGaAs heterostructure. The depletion of free carriers below the trenches gives rise to very strong electrostatic confinement. This technique avoids the complications associated with the use of negative resist materials and lift‐off techniques while minimizing the time required to expose densely packed patterns. Aharonov–Bohm rings fabricated using this technique exhibit interference oscillation larger than any reported previously.
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81.65.-b Surface treatments
85.40.Hp Lithography, masks and pattern transfer
85.30.Tv Field effect devices
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)

Investigation of dislocation jump distance during creep of NaCl single crystals using nuclear magnetic resonance pulse techniques

K. Linga Murty, D. Begert, R. Munter, and O. Kanert

Appl. Phys. Lett. 55, 628 (1989); http://dx.doi.org/10.1063/1.101806 (3 pages) | Cited 2 times

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Nuclear magnetic resonance pulse techniques are applied in situ to investigate the dynamics of mobile dislocations during creep deformation of NaCl single crystals. 23Na spin‐lattice relaxation rates were measured in the rotating frame (T1ρ) during compression creep of single crystals of NaCl along the [110] direction at 478 K and 20 MPa. The relaxation rates are evaluated from the spin‐echo height following a π/2 locking and 64° pulse sequence. The mean jump distance of the mobile dislocations, evaluated from the ratio of the signal heights without deformation and during creep, decreased with time/strain reaching a constant value at the onset of the steady‐state creep regime. The results are compared with the dislocation‐dislocation spacing, the subgrain size, and the jump distance predicted from creep models.
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61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
76.60.Es Relaxation effects
81.40.Lm Deformation, plasticity, and creep
62.20.Hg Creep

Low‐temperature diamond deposition by microwave plasma‐enhanced chemical vapor deposition

Y. Liou, A. Inspektor, R. Weimer, and R. Messier

Appl. Phys. Lett. 55, 631 (1989); http://dx.doi.org/10.1063/1.101807 (3 pages) | Cited 56 times

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Thin diamond films were deposited on silicon, MgO, fused silica, and soda lime silica glass at low temperature (the lowest temperature ∼365 °C) by microwave plasma‐enhanced chemical vapor deposition. The films were identified as diamond by Raman spectroscopy. A Raman peak shift of several wave numbers to either lower or higher wave numbers due to the strain of the film is also observed. The film deposited on glass is highly transparent. The fine faceted crystals in the film are shown in scanning electron microscope micrographs.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.66.-w Optical properties of specific thin films
78.30.Hv Other nonmetallic inorganics
68.55.-a Thin film structure and morphology

Crystalline diamond growth in thin films deposited from a CH4/Ar rf plasma

Gehan Amaratunga, Andrew Putnis, Kim Clay, and William Milne

Appl. Phys. Lett. 55, 634 (1989); http://dx.doi.org/10.1063/1.101808 (2 pages) | Cited 52 times

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Observation of single‐crystal diamond growth in thin films obtained from the rf decomposition of a CH4/Ar plasma is reported. The films were deposited on Si substrates which were kept at 20 °C. Polycrystalline diamond grains are seen over the entire film. Single‐crystal diffraction patterns obtained from larger grains all show {111} twinning.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.Nq Composition and phase identification

Manipulation of Si nucleation on artificial sites of SiNx (x<4/3) over SiO2

N. Sato and T. Yonehara

Appl. Phys. Lett. 55, 636 (1989); http://dx.doi.org/10.1063/1.102437 (3 pages) | Cited 1 time

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A matrix of Si crystals can be formed on amorphous substrates by manipulating nucleation sites. We have investigated various SiNx by x‐ray photon spectroscopy in order to search for suitable artificial nucleation sites and measured the density of Si nuclei deposited on the SiNx. It is found that the Si/N compositional ratio of the Si+ ion implanted SiNx surface is much higher than the theoretically estimated value. Si nucleus density on these surfaces increases with the Si/N compositional ratio. Si crystals were well manipulated on the portions of the Si‐enriched SiNx dotted over SiO2 due to improved selectivity.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.35.Dv Composition, segregation; defects and impurities
68.55.Nq Composition and phase identification
68.35.Fx Diffusion; interface formation

Recombination‐induced metastable to stable transformation of the EL2 center in GaAs

Toshinobu Sugiyama, Katsumi Tanimura, and Noriaki Itoh

Appl. Phys. Lett. 55, 639 (1989); http://dx.doi.org/10.1063/1.101809 (3 pages) | Cited 3 times

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We carried out transient optical absorption measurements of the conversion, induced by electron pulse irradiation, of the GaAs EL2 between the normal (EL20) and metastable (EL2∗) states. It is found that no thermal barrier exists in the EL2∗ to EL20 conversion when induced by electron pulse irradiation and that the yield of the EL20 to EL2∗ conversion is much lower than that of the reverse conversion. These conversion processes were attributed to arise from the electron‐hole recombination at the EL2.
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71.55.Eq III-V semiconductors
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
78.60.-b Other luminescence and radiative recombination
61.72.J- Point defects and defect clusters

Bistable behavior of interface states in InP‐anodic oxide‐Al2O3‐metal structures

D. Vuillaume, N. Zencirci, M. Garrigues, and P. Viktorovitch

Appl. Phys. Lett. 55, 642 (1989); http://dx.doi.org/10.1063/1.102438 (3 pages) | Cited 2 times

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We report that part of the InP‐anodic oxide interface states consists of bistable defects under two charge state configurations. Deep level transient spectroscopy measurements after positive, negative, or zero bias cooling of the samples from room temperature to 80 K are used. Slow states induced by defects in the anodic oxide layer are also characterized with a concentration in the range 1017–1018 cm−3. The effect of the slow states on the bistable behavior is analyzed. This bistable behavior is related to the modification of the Fermi level pinning after some bias stresses.
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73.20.Hb Impurity and defect levels; energy states of adsorbed species
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.61.Ng Insulators
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

First observation of a titanium midgap donor level in In0.53Ga0.47As p‐n diodes

Z. Chen, W. Korb, R. K. Bauer, and D. Bimberg

Appl. Phys. Lett. 55, 645 (1989); http://dx.doi.org/10.1063/1.101810 (3 pages) | Cited 2 times

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Growth of Ti‐doped In0.53Ga0.47As using liquid phase epitaxy is reported. The energy position of the Ti4+/Ti3+ deep donor level in In0.53Ga0.47As p‐n diodes is precisely identified for the first time by deep level transient spectroscopy. The near midgap location of this level at EC−ET =0.37 eV and the potential of InGaAs:Ti of superior thermal stability make it a promising dopant for growing semi‐insulating In0.53Ga0.47As. A recent model suggesting the energy positions of transition metals not to vary across heterojunctions is tested and found to be at least qualitatively valid for this low spin transition metal.
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73.20.Hb Impurity and defect levels; energy states of adsorbed species
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
85.30.Kk Junction diodes

Determination of the coordination number of Co atoms at the CoSi2(A,B)/Si(111) interface by transmission electron microscopy

C. W. T. Bulle‐Lieuwma, A. F. de Jong, A. H. van Ommen, J. F. van der Veen, and J. Vrijmoeth

Appl. Phys. Lett. 55, 648 (1989); http://dx.doi.org/10.1063/1.102439 (3 pages) | Cited 31 times

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The atomic structure of the (111) interface between CoSi2 (type A and B) and Si is investigated by high‐resolution transmission electron microscopy, combined with image simulations. Type B interfaces of CoSi2 layers formed by thermal reaction of vapor deposited Co on (111) oriented Si, of Si/CoSi2/Si heterostructures, and of CoSi2 precipitates formed by high‐dose Co implantation were examined. The coordination of the Co atoms at all B‐type interfaces is found to be eightfold, in accordance with theoretical predictions. Type A interfaces of CoSi2 precipitates and continuous CoSi2 layers, formed by ion implantation and subsequent annealing, showed clear evidence for the presence of sevenfold coordinated interfacial Co.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
68.55.-a Thin film structure and morphology
68.35.Dv Composition, segregation; defects and impurities

Properties of Ga vacancies in AlGaAs materials

K. B. Kahen, D. L. Peterson, G. Rajeswaran, and D. J. Lawrence

Appl. Phys. Lett. 55, 651 (1989); http://dx.doi.org/10.1063/1.101811 (3 pages) | Cited 49 times

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Intermixing of AlGaAs‐based interfaces is known to be enhanced by capping wafers with a layer of SiO2. Assuming that this enhancement results from the introduction of additional Ga vacancies into the sample, it is possible to obtain the temperature‐dependent equilibrium Ga vacancy diffusivity. Experiments are performed whereby SiO2‐capped quantum well samples are annealed at temperatures ranging from 800 to 1025 °C. Calculated photoluminescence shifts are compared with the measured spectra, and a relation for the Ga vacancy diffusivity of the form 0.962 exp(−2.72/kBT) cm2/s is obtained. Using this relation, the equilibrium Ga vacancy concentration can be computed via an ensemble Monte Carlo simulation. The resulting expression is 1.25×1031 exp(−3.28/kBT) cm−3.
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68.35.Fx Diffusion; interface formation
68.35.Dv Composition, segregation; defects and impurities
66.30.J- Diffusion of impurities
78.55.Cr III-V semiconductors

Evaluation of the feasibility of a far‐infrared laser based on intersubband transitions in GaAs quantum wells

Shmuel I. Borenstain and Joseph Katz

Appl. Phys. Lett. 55, 654 (1989); http://dx.doi.org/10.1063/1.101812 (3 pages) | Cited 41 times

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The threshold current and quantum efficiency are calculated for a far‐infrared injection laser, based on intersubband transitions in GaAs single quantum wells. By considering the balance of gain against the free carrier and transverse optical (TO) phonon absorption, and the intersubband transition time in the intermediate to the far infrared, the wavelength dependence of the threshold current is calculated. We find that for the wavelength range 50–120 μm, the required threshold currents are the lowest and have reasonable values of 103–104 A/cm2. The threshold quantum efficiency in that range is expected to be ∼10−4.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Analysis of defect‐assisted tunneling based on low‐frequency noise measurements of resonant tunnel diodes

M. H. Weichold, S. S. Villareal, and R. A. Lux

Appl. Phys. Lett. 55, 657 (1989); http://dx.doi.org/10.1063/1.101813 (3 pages) | Cited 10 times

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The results of an experimental apparatus and procedure using noise measurement techniques to identify conduction mechanisms in resonant tunneling diodes due to defect‐assisted tunneling are presented. The activation energies and capture cross sections of the traps are determined for each of three distinct levels detected. These values are in good agreement between the forward bias and inverted bias cases. A conjecture is made as to the physical location of the traps. This interpretation yields qualitative behavior consistent with the known bias and temperature dependence of the experimental results.
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85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
73.40.Gk Tunneling
73.50.Td Noise processes and phenomena
73.20.Hb Impurity and defect levels; energy states of adsorbed species

Selective area crystallization of amorphous silicon films by low‐temperature rapid thermal annealing

Gang Liu and S. J. Fonash

Appl. Phys. Lett. 55, 660 (1989); http://dx.doi.org/10.1063/1.101814 (3 pages) | Cited 33 times

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We report the first demonstration of selective area crystallization of amorphous silicon films using low‐temperature rapid thermal annealing. Crystallization temperatures as low as 500 °C were achieved with the help of a thermally evaporated ultrathin metal layer. The selective area crystallization was accomplished by using this ultrathin metal layer to define the region to be crystallized. The edge between two regions, that which has been crystallized and that which has not, is found to be very sharp.
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68.55.-a Thin film structure and morphology
68.35.Rh Phase transitions and critical phenomena
81.65.-b Surface treatments
81.40.-z Treatment of materials and its effects on microstructure, nanostructure, and properties

Three‐terminal delta‐doped barrier switching device with S‐shaped negative differential resistance

J. N. Baillargeon, K. Y. Cheng, J. Laskar, and J. Kolodzey

Appl. Phys. Lett. 55, 663 (1989); http://dx.doi.org/10.1063/1.101815 (3 pages) | Cited 12 times

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A molecular beam epitaxial grown GaAs three‐terminal device with a delta‐doped barrier and GaInAs quantum well exhibiting controllable S‐shaped negative differential resistance and switching voltages has been fabricated and tested. The device has a large potential barrier between the anode and cathode regions which can be modulated via a third terminal. The modulation of the potential barrier has a substantial effect on the switching behavior of the device. For the devices having a cathode contact area of 50 μm2, a spectrum analyzer reveals unstable oscillation up to the system measurement limit of 21 GHz. The output power signal for the best device is greater than −10 dBm which is 20 dB above the noise floor at 20.8 GHz. The results show this device to be a potentially useful and promising high‐frequency oscillator.
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85.30.Hi Surface barrier, boundary, and point contact devices
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.50.Fq High-field and nonlinear effects
73.61.Ey III-V semiconductors

Cyclotron resonance of two‐dimensional holes in strained‐layer quantum well structure of (100)In0.20Ga0.80As/GaAs

S. Y. Lin, C. T. Liu, D. C. Tsui, E. D. Jones, and L. R. Dawson

Appl. Phys. Lett. 55, 666 (1989); http://dx.doi.org/10.1063/1.101816 (3 pages) | Cited 14 times

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Cyclotron resonance of the two‐dimensional hole gas (2DHG) in the strained‐layer quantum well structure of In0.20Ga0.80As/GaAs is observed in far‐infrared transmission measurements made at 4.2 K. The cyclotron mass of the 2DHG in the In0.20Ga0.80As channel is (0.191±0.008)me for a 2D hole density p2D =8.5×1011/cm2.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
76.40.+b Diamagnetic and cyclotron resonances
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Numerical calculation of particle trajectories and tunneling times for resonant tunneling barrier structures

K. L. Jensen and F. A. Buot

Appl. Phys. Lett. 55, 669 (1989); http://dx.doi.org/10.1063/1.101817 (3 pages) | Cited 27 times

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The Wigner particle trajectories in phase space for double‐barrier semiconductor quantum well structures are investigated by numerically calculating the Wigner distribution function. The determination of the particle dynamics of the phase points allows for an estimation of tunneling times, particle currents, and particle energies associated with the statistics of bound and open trajectories across the double‐barrier structures.
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73.40.Gk Tunneling
85.30.De Semiconductor-device characterization, design, and modeling
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)

Disordering of GaAs/AlGaAs multiple quantum well structures by thermal annealing for monolithic integration of laser and phase modulator

H. Ribot, K. W. Lee, R. J. Simes, R. H. Yan, and L. A. Coldren

Appl. Phys. Lett. 55, 672 (1989); http://dx.doi.org/10.1063/1.101818 (3 pages) | Cited 22 times

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Conventional thermal annealing with various caps on the surface of the sample is used to selectively disorder one section of a multiple quantum well GaAs/AlGaAs structure. In the disordered section, the shift of the photoluminescence peak is in the range where the chirp parameter (ratio of real index change over absorption change) is large at the laser wavelength in the undisordered material. Moreover, photoconductivity measurements on samples under reverse bias, as well as laser testing, prove that the electric properties are preserved by the thermal treatment. Therefore, the investigated process should be highly suitable for the monolithic integration of a laser and phase modulator.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
73.20.Fz Weak or Anderson localization
42.82.-m Integrated optics
81.40.-z Treatment of materials and its effects on microstructure, nanostructure, and properties

Preferential propagation of pores during the formation of porous silicon: A transmission electron microscopy study

S.‐F. Chuang, S. D. Collins, and R. L. Smith

Appl. Phys. Lett. 55, 675 (1989); http://dx.doi.org/10.1063/1.101819 (3 pages) | Cited 79 times

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A transmission electron microscopy study of porous silicon reveals that pores selectively propagate in the 〈100〉 crystallographic directions on both n‐ and p‐type silicon, independent of dopant concentration or anodization conditions.
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81.05.Rm Porous materials; granular materials
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
81.65.-b Surface treatments
68.55.-a Thin film structure and morphology

Carbon in GaAs: Implantation and isolation characteristics

S. J. Pearton and C. R. Abernathy

Appl. Phys. Lett. 55, 678 (1989); http://dx.doi.org/10.1063/1.101820 (3 pages) | Cited 37 times

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Carbon was implanted into GaAs at doses between 1013 and 5×1014 cm−2, either by itself or with Ga coimplantation at room temperature or 200 °C. Activation percentages as high as 40% were obtained for C+Ga implants at 5×1014 cm−2 compared to <3% for C implantation only. The peak activation occurs for an annealing temperature of 800 °C for 10 s, while above this the net activation decreases, apparently due to site switching. The C shows fairly minimal redistribution during anneals up to 1000 °C in contrast to other acceptor dopants in GaAs. The formation of highly resistive (>106 Ω/☒) layers in C‐doped (p∼2×1020 cm−3) GaAs is possible by using oxygen bombardment doses above 5×1014 cm−2. Under these conditions the evolution of the implanted layer resistivity with annealing temperature can be described by the usual trap‐related compensation mechanism.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
66.30.J- Diffusion of impurities
81.40.Rs Electrical and magnetic properties related to treatment conditions
73.61.Ey III-V semiconductors
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