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21 Aug 1989

Volume 55, Issue 8, pp. 711-807

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Incident wavelength dependence of photocurrent bistability by external bias voltage control in a quantum well p‐i‐n diode

Yasunori Tokuda, Kyozo Kanamoto, and Noriaki Tsukada

Appl. Phys. Lett. 55, 711 (1989); http://dx.doi.org/10.1063/1.101782 (2 pages) | Cited 4 times

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From external electric field dependence of photocurrent spectra of a quantum well p‐i‐n photodiode connected to a series resistive load, it is predicted and directly demonstrated that photocurrent bistability is obtained with respect to the variation of the external bias voltage when the device is illuminated by an incident ray in a certain wavelength region. Furthermore, additional self‐consistent interpretation is given with empirical data taken for the system with no series resistor.
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85.60.Dw Photodiodes; phototransistors; photoresistors
73.50.Pz Photoconduction and photovoltaic effects
73.61.Ey III-V semiconductors
71.35.-y Excitons and related phenomena

Quasi‐nondestructive readout of holographically stored information in photorefractive Bi12SiO20 crystals

A. Delboulbe, C. Fromont, J. P. Herriau, S. Mallick, and J. P. Huignard

Appl. Phys. Lett. 55, 713 (1989); http://dx.doi.org/10.1063/1.102441 (3 pages) | Cited 22 times

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The hologram fixing process in a Bi12 SiO20 crystal arises due to the formation of a complementary grating of positive charges localized in shallow traps. Uniform illumination of the crystal with blue or green light erases the electronic charge pattern but leaves the positive charge grating undisturbed. Due to the smaller mobility lifetime product of holes, this grating decays at room temperature with a time constant that is much longer than that of the electronic grating. We show in this letter that the readout time constant can be further increased considerably by cooling the crystal. Images retrieved from a crystal kept at 0 °C temperature and under continuous illumination for a few hours are presented. The energy levels of the hole trapping sites involved in this process are found to be situated at 0.56 and 1.1 eV above the valence band.
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42.30.Va Image forming and processing
42.40.Kw Holographic interferometry; other holographic techniques
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
78.20.-e Optical properties of bulk materials and thin films

Detecting transition regions in magneto‐optical disk systems

Masud Mansuripur

Appl. Phys. Lett. 55, 716 (1989); http://dx.doi.org/10.1063/1.101783 (2 pages) | Cited 6 times

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Several combinations of incident polarization and detection schemes suitable for direct detection of transitions in magneto‐optical disk systems are described. One such combination uses a circularly polarized light with a single split detector in the far field. Another scheme uses linear polarization in conjunction with differential detection. In the first scheme the medium must be optimized for Kerr rotation while the second method requires maximum ellipticity.
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42.79.Vb Optical storage systems, optical disks
85.70.Sq Magnetooptical devices

Relating the chirp parameter to the number of quantum wells in GaAs/AlGaAs waveguide modulators

T. Hausken, R. H. Yan, R. J. Simes, and L. A. Coldren

Appl. Phys. Lett. 55, 718 (1989); http://dx.doi.org/10.1063/1.101784 (3 pages) | Cited 4 times

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For wavelengths near the quantum well absorption edge it is found that fewer quantum wells favor ideal phase modulation in GaAs/AlGaAs waveguide modulators. This is due to the dominance of the linear electro‐optic effect over quantum absorption effects in the separate confinement waveguide. For TE polarization, it is found that the chirp parameter varies from <1 to >10 at −5 V and λ=0.89 μm in actual devices depending on the number of wells. The data fit estimates from theory. For TM polarization no dependence was observed as expected. For an integrated laser/phase modulator (with different absorption edges) a 4‐well structure may be near optimum to maximize the modulation efficiency and to still have low laser threshold current.
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42.79.Gn Optical waveguides and couplers
42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

cw diode pumped 2.3 μm fiber laser

R. Allen and L. Esterowitz

Appl. Phys. Lett. 55, 721 (1989); http://dx.doi.org/10.1063/1.101785 (2 pages) | Cited 7 times

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We report the first successful operation of a diode pumped continuous‐wave (cw) thulium‐doped fluorozirconate fiber laser at 2.3 μm. Output power of 1 mW and slope efficiency of 10% are demonstrated. Saturation effects limiting efficiency are observed and discussed.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.81.Wg Other fiber-optical devices

High‐power and high‐speed 1.3 μm V‐grooved inner‐stripe lasers with new semi‐insulating current confinement structures on p‐InP substrates

H. Wada, H. Horikawa, Y. Matsui, Y. Ogawa, and Y. Kawai

Appl. Phys. Lett. 55, 723 (1989); http://dx.doi.org/10.1063/1.101786 (3 pages) | Cited 8 times

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A significant improvement in the maximum output power of a 1.3 μm GaInAsP/InP laser with a semi‐insulating current confinement structure is reported. The improvement has been achieved by interposing an n‐type InP layer between a p‐InP substrate and an Fe‐doped InP layer. A maximum cw output power of 180 mW and a modulation bandwidth of 8.5 GHz have been obtained.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Fc Modulation, tuning, and mode locking

Effect of chopping on laser penetration of metal targets

H. S. Kim, Y. Domankevitz, H. S. Kwok, and J. A. Copley

Appl. Phys. Lett. 55, 726 (1989); http://dx.doi.org/10.1063/1.101787 (3 pages) | Cited 3 times

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A new technique for increasing the laser penetration efficiency of metals has been developed. By amplitude modulating a free‐running neodymium:yttrium aluminum garnet laser pulse, the depth of the crater was increased and the threshold energy for reliable hole drilling was decreased significantly. It was observed that the effect of chopping was optimal at 8–12 kHz with a 70% duty cycle. We believe that this improvement is due to an increase in the vapor recoil pressure and reduced plasma screening. Possible acoustic resonance effects have also been considered and will be discussed.
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79.20.Ds Laser-beam impact phenomena
81.05.Bx Metals, semimetals, and alloys
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers

High‐frequency performance of InGaAs metal‐semiconductor‐metal photodetectors at 1.55 and 1.3 μm wavelengths

J. B. D. Soole, H. Schumacher, H. P. LeBlanc, R. Bhat, and M. A. Koza

Appl. Phys. Lett. 55, 729 (1989); http://dx.doi.org/10.1063/1.101788 (3 pages) | Cited 10 times

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The high‐speed performance of InGaAs interdigitated metal‐semiconductor‐metal (M‐S‐M) photodetectors illuminated with 1.55 and 1.3 μm wavelength radiation is modeled using a two‐dimensional transit time calculation. Excellent agreement is found with the experimental pulse response of detectors with interdigital spacings of 2 and 3 μm. We study the dependence of the bandwidth on the device dimensions, and also examine the quantum efficiency. The results should aid the design of InGaAs M‐S‐M detectors with the optimum combination of bandwidth and efficiency for a given application.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
72.40.+w Photoconduction and photovoltaic effects

Direct observation of atomic planes in epitaxial multilayers by anodization spectroscopy

M. G. Blamire, K. H. Huang, R. E. Somekh, E. C. G. Kirk, G. W. Morris, and J. E. Evetts

Appl. Phys. Lett. 55, 732 (1989); http://dx.doi.org/10.1063/1.101789 (3 pages) | Cited 3 times

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Using the technique of anodization spectroscopy we have shown that it is possible to directly observe individual atomic planes in high quality Nb/Ta epitaxial multilayers. The signal corresponding to the atomic planes is superimposed on the superlattice structure associated with the different anodization rates of the two metals. The results imply that an upper limit of less than 0.1 nm can be placed on the fundamental resolution of this novel measurement technique. As a test of this measurement we have obtained data from films grown on different orientation substrates, and have shown that the separation of the peaks corresponds to the known lattice spacings in the growth direction. The mechanisms responsible for the very uniform propagation of the anodization front and the consequent ability to observe directly the atomic planes normal to the exposed surface are discussed.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
73.50.-h Electronic transport phenomena in thin films
68.55.-a Thin film structure and morphology
68.37.-d Microscopy of surfaces, interfaces, and thin films

Disordering of ZnSe/ZnS strained‐layer superlattices by Si ion implantation

Tohru Saitoh, Toshiya Yokogawa, and Tadashi Narusawa

Appl. Phys. Lett. 55, 735 (1989); http://dx.doi.org/10.1063/1.101790 (3 pages) | Cited 5 times

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Disordering of ZnSe/ZnS strained‐layer superlattices(SLSs) induced by Si ion implantation and subsequent low‐temperature thermal annealing was confirmed. Si ions were implanted (100 keV, 1×1016 ions/cm2 ) into SLSs (140 Å ZnSe‐140 Å ZnS, ten periods). By secondary‐ion mass spectrometry analyses, periodic profiles of Se and S were clearly observed just after the ion implantation; however, they disappeared after subsequent thermal annealing (450 °C, 3 h). Photoluminescence measurements showed the peak of ZnSx Se1−x alloyed crystal after thermal annealing. The disordering is mainly induced by the diffusion of defects generated by the ion implantation at the early stage of low‐temperature thermal annealing. This low temperature and planar process will be very useful to the fabrication of II‐VI compound semiconductor optical and electrical devices.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
61.80.Jh Ion radiation effects
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.55.Et II-VI semiconductors

Ultraviolet laser‐induced low‐temperature epitaxy of GaP

U. Sudarsan, N. W. Cody, T. Dosluoglu, and R. Solanki

Appl. Phys. Lett. 55, 738 (1989); http://dx.doi.org/10.1063/1.101791 (3 pages) | Cited 3 times

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An ArF excimer laser has been used to achieve homoepitaxy of GaP at 500 °C using trimethylgallium and tertiarybutylphosphine as the precursor gases. Dependence of epitaxial growth on several parameters is examined. It is found that at 500 °C, in the presence of laser radiation, higher growth rate and superior crystalline properties of GaP are achieved compared to purely thermal growth. Electrical properties of p‐n diodes fabricated via Zn doping have also been examined.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
85.30.Kk Junction diodes

Aluminum selective area deposition on Si using diethylaluminumchloride

C. Sasaoka, K. Mori, Y. Kato, and A. Usui

Appl. Phys. Lett. 55, 741 (1989); http://dx.doi.org/10.1063/1.101792 (3 pages) | Cited 12 times

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Aluminum deposition on Si was studied using diethylaluminumchloride (DEAlCl) as a new Al chemical vapor deposition source. Selective area deposition was successfully achieved at substrate temperatures of 313–380 °C. The deposition rate was higher than 370 Å/min. Reflectance and resistivity of the deposited films were comparable to those of the evaporated ones. Decomposition experiments suggest that DEAlCl catalytically decomposes on the Al surface, which would explain the high selectivity observed.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Hole tunneling times in GaAs/AlAs double‐barrier structures

E. T. Yu, M. K. Jackson, and T. C. McGill

Appl. Phys. Lett. 55, 744 (1989); http://dx.doi.org/10.1063/1.101793 (3 pages) | Cited 29 times

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We have calculated hole tunneling times in GaAs/AlAs double‐barrier structures taking quantum well band‐mixing effects into account. Our results indicate that for sufficiently high hole temperatures and concentrations, band‐mixing effects reduce average hole tunneling times from the pure heavy hole value to values comparable to electron tunneling times in the same structure. For very low hole temperatures and concentrations, band mixing is less important and average hole tunneling times should approach the pure heavy hole value. These results provide an explanation for previously reported experimental results in which electrons and holes were found to be characterized by very similar tunneling times.
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73.40.Gk Tunneling
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
73.61.Ey III-V semiconductors

Solid phase epitaxy of a Ge‐Si alloy on [111] Si through a Pd2Si layer

Q. Z. Hong, J. G. Zhu, and J. W. Mayer

Appl. Phys. Lett. 55, 747 (1989); http://dx.doi.org/10.1063/1.101794 (2 pages) | Cited 5 times

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Solid phase epitaxy of a Ge70Si30 alloy on [111]Si substrates was achieved in the amorphous Ge/Pd2Si/[111]Si system. Upon annealing at temperatures above 600 °C,the Ge transported through the silicide layer and formed a Ge‐rich, Si‐Ge epitaxial layer on top of the Si substrate. At the same time the Pd silicide layer exchanged positions with the Ge, leading to the final configuration of Pd2Si/Si‐Ge/[111]Si. The crystallinity of Pd2Si had a major effect on the epitaxy of the Ge‐Si alloy. On [100]Si where the Pd2Si was polycrystalline, epitaxial Ge‐Si growth was not observed.
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81.15.Np Solid phase epitaxy; growth from solid phases
68.55.-a Thin film structure and morphology

Indium phosphide on gallium arsenide heteroepitaxy with interface layer grown by flow‐rate modulation epitaxy

W. K. Chen, J. F. Chen, J. C. Chen, H. M. Kim, L. Anthony, C. R. Wie, and P. L. Liu

Appl. Phys. Lett. 55, 749 (1989); http://dx.doi.org/10.1063/1.101795 (3 pages) | Cited 6 times

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We have grown and characterized heteroepitaxial films of InP on GaAs. We demonstrate that by using flow‐rate modulation epitaxy to grow the interface layer in a two‐step process, we can improve the quality of heteroepitaxy films. The full widths at half maximum of the x‐ray rocking curve and the 10 K photoluminescence spectrum for a 6.2‐μm‐thick InP/GaAs are 144 arcsec and 1.28 meV, respectively.
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68.35.Fx Diffusion; interface formation
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
78.55.Cr III-V semiconductors
73.30.+y Surface double layers, Schottky barriers, and work functions

Broadband long‐wavelength operation (9700 Å≳λ≳8700 Å) of AlyGa1−yAs‐GaAs‐InxGa1−xAs quantum well heterostructure lasers in an external grating cavity

D. C. Hall, J. S. Major, N. Holonyak, P. Gavrilovic, K. Meehan, W. Stutius, and J. E. Williams

Appl. Phys. Lett. 55, 752 (1989); http://dx.doi.org/10.1063/1.101796 (3 pages) | Cited 7 times

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Data are presented on p‐n AlyGa1−yAs‐ GaAs‐InxGa1−xAs quantum well heterostructure lasers showing that the large band filling range of a combined GaAs‐InxGa1−xAs quantum well makes possible a very large tuning range in external grating operation. Continuous 300 K laser operation is demonstrated in the 8696–9711 Å range (Δλ∼1000 Å, Δℏω∼150 meV) and pulsed operation in the 8450–9756 Å range (Δλ∼1300 Å, Δℏω∼200 meV). The band filling and gain profile are shown to be continuous from the InxGa1−xAs quantum well (Lz ∼125 Å, x∼0.2) up into the surrounding GaAs quantum well (Lz ∼430 Å).
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Electrical characteristics of reoxidized‐nitrided chemical vapor deposited oxides

H. Hwang, W. Ting, D. L. Kwong, J. Lee, L. Buhrow, and R. A. Bowling

Appl. Phys. Lett. 55, 755 (1989); http://dx.doi.org/10.1063/1.102443 (2 pages) | Cited 1 time

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This letter presents electrical characteristics of thin (110 Å) metal‐oxide‐semiconductor gate dielectrics formed by chemical vapor deposited (CVD) SiO2, followed by rapid thermal nitridation and furnace reoxidation. Electrical measurements show that reoxidized‐nitrided CVD dielectrics exhibit lower rates of interface‐state generation and electron trapping under electrical stress, as compared to as‐deposited CVD oxides. Combining with the advantage of lower defect density from CVD oxides (as compared to thermal oxide), these reoxidized‐nitrided CVD films may be promising candidates for thin dielectrics applications.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.66.-w Optical properties of specific thin films
78.30.Hv Other nonmetallic inorganics
68.55.-a Thin film structure and morphology

Tunable stimulated emission of radiation in GaAs doping superlattices

E. F. Schubert, J. P. van der Ziel, J. E. Cunningham, and T. D. Harris

Appl. Phys. Lett. 55, 757 (1989); http://dx.doi.org/10.1063/1.101797 (3 pages) | Cited 9 times

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Tunable stimualted emission of radiation is achieved in AlxGa1−xAs/GaAs double heterostructures, in which the waveguiding GaAs region consists of a delta‐doped doping superlattice. The low‐temperature emission energy is 45 meV below the bulk band gap of GaAs for homogeneous optical excitation of the Fabry–Perot cavity. The emission energy is continuously tunable over 35 Å by inhomogeneous excitation of the cavity.
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78.45.+h Stimulated emission
42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Incidence angle effect of a hydrogen plasma beam for the cleaning of semiconductor surfaces

I. Suemune, Y. Kunitsugu, Y. Kan, and M. Yamanishi

Appl. Phys. Lett. 55, 760 (1989); http://dx.doi.org/10.1063/1.101798 (3 pages) | Cited 28 times

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Incidence angle effect of a hydrogen plasma beam with an ion energy of about 20 eV was observed in a cleaning process for GaAs and Si surfaces for the first time. An atomically flat (001) GaAs substrate surface which was observed by clear Laue spots was prepared with a glancing angle of incidence. Similar improvement of smoothness was observed with the glancing angle of incidence on a Si surface when it was compared with perpendicular incidence. The mechanism is discussed considering momentum transfer parallel to the surface in the collision process and the resultant migration enhancement on the surface.
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81.65.-b Surface treatments
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
68.35.B- Structure of clean surfaces (and surface reconstruction)
61.80.Jh Ion radiation effects

Electroabsorption spectroscopy of amorphous Si/SiC quantum well structures

K. Hattori, M. Tsujishita, H. Okamoto, and Y. Hamakawa

Appl. Phys. Lett. 55, 763 (1989); http://dx.doi.org/10.1063/1.101799 (3 pages) | Cited 4 times

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The interband optical transition in quantum wells of hydrogenated amorphous silicon and silicon carbide has been studied by using electroabsorption (EA) spectroscopy. The observed EA spectrum exhibits a triangular line shape, identified as being due to a field‐induced modification of the subband transition. The identification is confirmed by comparing with the experimental result of thermoabsorption spectroscopy.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.66.-w Optical properties of specific thin films
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Investigation of cadmium‐donor pairs in silicon

N. Achtziger, S. Deubler, D. Forkel, H. Wolf, and W. Witthuhn

Appl. Phys. Lett. 55, 766 (1989); http://dx.doi.org/10.1063/1.102265 (3 pages) | Cited 10 times

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The formation of indium‐donor pairs (donors: P, As, Sb) in silicon is identified by perturbed angular correlation spectroscopy. After the electron capture decay of the 111 In probe atoms to 111 Cd, the electric field gradient (EFG) is measured at the corresponding cadmium‐donor pairs. For all three complexes a similar temperature dependence of the EFG is observed which can be explained quantitatively by a model based on the charge state of the cadmium‐donor acceptors. The corresponding energy levels are given.
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71.55.Ht Other nonmetals
76.80.+y Mössbauer effect; other γ-ray spectroscopy
61.72.uf Ge and Si
61.72.Yx Interaction between different crystal defects; gettering effect

Analysis of transients in pulse modulated semiconductor lasers biased near threshold

A. Mecozzi, P. Spano, A. D’Ottavi, and S. Piazzolla

Appl. Phys. Lett. 55, 769 (1989); http://dx.doi.org/10.1063/1.101800 (3 pages) | Cited 10 times

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A theory of time jitter in semiconductor lasers initially biased just below threshold is developed. Simulations of the buildup of emitted optical pulses in lasers starting from below or above threshold are also presented which, for initial biasing up to threshold, are in good agreement with the theory. In particular, we show that time jitter does not vary for biasing currents up to about 0.95 of the threshold value, while it suffers a small increase at threshold and a steep decrease for higher biasing currents.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.Fc Modulation, tuning, and mode locking

Study of hydrogenation in GaSb/AlSb multiple quantum well structures by time‐resolved luminescence

M. Capizzi, C. Coluzza, A. Frova, U. Cebulla, and A. Forchel

Appl. Phys. Lett. 55, 772 (1989); http://dx.doi.org/10.1063/1.101802 (3 pages) | Cited 3 times

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Continuous and pulsed photoluminescence experiments in GaSb/AlSb multiple quantum wells have been performed before and after exposure to hydrogen. An appreciable increase in the emission efficiency has been observed for H ion doses as low as 1013/cm2. Since the results cannot be accounted for in terms of the plain passivation of nonradiative centers, the effect is ascribed mostly to a change in the mechanism of carrier relaxation within the lower end of the bound‐state distribution.
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78.55.Cr III-V semiconductors
71.55.Eq III-V semiconductors
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
81.40.Tv Optical and dielectric properties related to treatment conditions

GaAs metal‐semiconductor field‐effect transistor with extremely low resistance nonalloyed ohmic contacts using an InAs/GaAs superlattice

N. S. Kumar, J.‐I. Chyi, C. K. Peng, and H. Morkoç

Appl. Phys. Lett. 55, 775 (1989); http://dx.doi.org/10.1063/1.101803 (2 pages) | Cited 9 times

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GaAs metal‐semiconductor field‐effect transistors (MESFETs) with extremely low resistance nonalloyed ohmic contacts have been demonstrated. The contact structure consists of an n+‐InAs/GaAs strained‐layer superlattice and an InAs cap layer. Contact resistances as low as 0.036 Ω mm have been measured. These results represent the smallest figures reported to date for GaAs field‐effect transistors. Nonalloyed MESFETs with 1 μm gate lengths had transconductances of about 210 mS/mm.
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71.55.Eq III-V semiconductors
61.72.U- Doping and impurity implantation

On‐line determination of alloy composition during ternary III/V molecular beam epitaxy

J. Y. Tsao, T. M. Brennan, J. F. Klem, and B. E. Hammons

Appl. Phys. Lett. 55, 777 (1989); http://dx.doi.org/10.1063/1.101804 (3 pages) | Cited 10 times

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We describe a simple, new method for deducing surface alloy composition during ternary III/V molecular beam epitaxy. The method is based on on‐line reflection mass spectrometry of the group V flux ‘‘reflected’’ from the surface during momentary terminations of individual group III fluxes.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.35.Dv Composition, segregation; defects and impurities
68.55.Nq Composition and phase identification
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)
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