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28 Aug 1989

Volume 55, Issue 9, pp. 813-921

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Low‐threshold grating‐coupled surface‐emitting lasers

D. F. Welch, R. Parke, A. Hardy, W. Streifer, and D. R. Scifres

Appl. Phys. Lett. 55, 813 (1989); http://dx.doi.org/10.1063/1.101767 (3 pages) | Cited 7 times

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The high threshold current densities of single quantum well separate confinement heterostructure grating‐coupled surface‐emitting lasers are shown to result from a combination of inadequate gain in the lowest quantum state and the wavelength selective properties of the grating reflectors. The situation is aggravated by the saturable absorption loss in the grating sections and sizeable scattering losses at the etch step between gain and grating regions. Grating‐coupled surface‐emitting lasers with 50‐μm‐wide broad‐area double quantum well active regions are reported with threshold currents reduced by a factor of 3 and with improved differential efficiency. Measurements of gain saturation of single quantum wells are presented.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
78.45.+h Stimulated emission
42.60.By Design of specific laser systems

Coherent operation of an array of diode lasers using a spatial filter in a Talbot cavity

F. X. D’Amato, E. T. Siebert, and C. Roychoudhuri

Appl. Phys. Lett. 55, 816 (1989); http://dx.doi.org/10.1063/1.101768 (3 pages) | Cited 42 times

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Coherent operation of an array of AlGaAs diode lasers was obtained by placing the array in an external cavity which made use of the Talbot self‐imaging effect to couple the laser diodes together. A spatial filter was required to suppress oscillation of the highest order mode of the array. This filter introduced no significant loss to the cavity mode, and the mode was observed to be stable up to the maximum rated drive current for the device.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.55.Px Semiconductor lasers; laser diodes

Reproducible growth of low‐threshold single and multiple quantum well InGaAs/InP lasers by a novel interlayer growth technique

T. Tanbun‐Ek, H. Temkin, S. N. G. Chu, and R. A. Logan

Appl. Phys. Lett. 55, 819 (1989); http://dx.doi.org/10.1063/1.101769 (3 pages) | Cited 11 times

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High quality single (SQW) and multiple (MQW) quantum well InGaAs/InP lasers have been realized for the first time utilizing a newly developed interlayer growth technique. The technique utilizes separate confinement SQW and MQW lasers grown by atmospheric pressure metalorganic vapor phase epitaxy (MOVPE) having 10–20 nm InGaAs well(s) cladded by 50‐nm‐thick InGaAsP (λg=1.46 μm) waveguide layers. Carrier confinement and interfacial layer perfection are improved by growth of a few monolayers (∼1 nm) of InP at the QW‐barrier interface and by using a novel flushing technique between growth of layers of different compositions. Both SQW and MQW lasers exhibit threshold current density of ∼2 kA/cm2. Buried‐heterostructure lasers grown entirely by MOVPE in a two‐growth step show threshold current of 18–40 mA and quantum efficiency as high as 21% facet with good linearity up to 15 mW.
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42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Period doubling in directly modulated InGaAsP semiconductor lasers

Laurent Chusseau, Eric Hemery, and Jean‐Michel Lourtioz

Appl. Phys. Lett. 55, 822 (1989); http://dx.doi.org/10.1063/1.101770 (3 pages) | Cited 19 times

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We report on period doubling in a directly modulated InGaAsP semiconductor laser at 1.3 μm. This behavior is obtained for modulation frequencies between fr and 1.6fr, where fr is the laser resonant frequency measured under weak current modulation. The domain of period doubling as well as the time responses of the optical output is well interpreted using a rate equation model.
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42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes
42.65.Sf Dynamics of nonlinear optical systems; optical instabilities, optical chaos and complexity, and optical spatio-temporal dynamics

Dependence of external differential efficiency on laser length and reflectivities in multiple quantum well lasers

J. Z. Wilcox, S. Ou, J. J. Yang, M. Jansen, and G. L. Peterson

Appl. Phys. Lett. 55, 825 (1989); http://dx.doi.org/10.1063/1.101771 (3 pages) | Cited 9 times

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The external efficiency ηd of quantum well (QW) lasers is maximum at some characteristic laser length, which is dependent upon mirror reflectivities and the number of QWs in the active layer. The observed decrease in ηd in short lasers is caused by increased optical absorption associated with a high concentration of free carriers in the QW and the surrounding waveguide layer. The carriers spill into the waveguide because of QW subband filling in short cavity lasers with high threshold gains.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes

Two‐wavelength demultiplexing p‐i‐n GaAs/AlAs photodetector using partially disordered multiple quantum well structures

T. Miyazawa, T. Kagawa, H. Iwamura, O. Mikami, and M. Naganuma

Appl. Phys. Lett. 55, 828 (1989); http://dx.doi.org/10.1063/1.101772 (2 pages) | Cited 7 times

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A novel two‐wavelength p‐i‐n demultiplexer is proposed and fabricated using dopant‐free partial disordering of GaAs/AlAs quantum wells by rapid thermal annealing. A crosstalk attenuation of 41 dB and an interchannel spacing of 69 nm were achieved in the 0.8 μm wavelength region.
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42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
85.60.Gz Photodetectors (including infrared and CCD detectors)
42.79.Vb Optical storage systems, optical disks

Mutually coherent beam induced self‐pumped phase conjugate reflection in BaTiO3

Peixian Ye, Dadi Wang, Zhiguo Zhang, and Xing Wu

Appl. Phys. Lett. 55, 830 (1989); http://dx.doi.org/10.1063/1.102444 (2 pages) | Cited 2 times

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A self‐pumped phase conjugate reflection induced by another mutually coherent incident beam has been observed and explained successfully for the first time in a photorefractive crystal BaTiO3. Other relevant phenomena, such as the destruction of the coupling channel when two incident beams are mutually coherent, have also been studied. Possible applications are pointed out.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
78.20.Jq Electro-optical effects

Wave front reversal in acoustic phase conjugation by nonlinear electroacoustic interaction in LiNbO3

Masahiro Ohno

Appl. Phys. Lett. 55, 832 (1989); http://dx.doi.org/10.1063/1.102445 (2 pages) | Cited 2 times

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Acoustic phase conjugate waves were generated at a frequency of 50 MHz by nonlinear electroacoustic interaction in LiNbO3 and their wave front reversal property was experimentally examined. The wave front of the incident acoustic wave was deformed by inserting a phase object in the beam path, but the phase conjugate wave after retracing the path showed little influence of deformation.
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63.20.K- Phonon interactions
62.65.+k Acoustical properties of solids
43.35.Cg Ultrasonic velocity, dispersion, scattering, diffraction, and attenuation in solids; elastic constants

Metal clusters in ion plating

K. S. Fancey and A. Matthews

Appl. Phys. Lett. 55, 834 (1989); http://dx.doi.org/10.1063/1.101773 (3 pages) | Cited 16 times

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Conventional ion plating theory assumes that the metal vapor arrives at the substrate in monatomic form. Our results suggest this is not the case, and that a large proportion of the metal arrives as clusters. This is based on measurements of the cathode fall distance before and during titanium deposition in a thermionically supported argon glow discharge. The results have been used to evaluate the charge‐to‐mass ratio of the metal species in accordance with the Child–Langmuir equation. This predicts that some titanium is present as atomic clusters which contain at least tens of atoms per unit charge. Also we show that at least 90% of the ion current arriving at the substrate is carried by the metallic species.
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81.15.Jj Ion and electron beam-assisted deposition; ion plating

Effects of sputtered particle energy on the properties of SiO2 films

Takeshi Ohwaki and Yasunori Taga

Appl. Phys. Lett. 55, 837 (1989); http://dx.doi.org/10.1063/1.101575 (3 pages) | Cited 6 times

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Secondary ion‐energy distributions (SIEDs) emitted from Si under various conditions of targets (Si, SiO2) and primary ions (Ar+, O+) were measured and thin SiO2 films were deposited by magnetron sputtering techniques under the corresponding conditions to the SIED experiments. The most probable energies of silicon oxygen cluster ions of SimO+n (m, n=1, 2,...) are equal to those of Al+ thermal ions, while those of Si+l (l=1, 2,...) remain unchanged with the introduction of oxygen in chamber during Ar+ ion bombardment. The current‐voltage plots of SiO2 films are also measured and found to be influenced by the deposition conditions. It is concluded that the differences in current‐voltage characteristics of SiO2 films prepared under various sputtering conditions can be reasonably explained in terms of the changes in the most probable energy of the sputtered particles.
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79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
81.15.Cd Deposition by sputtering
81.40.Rs Electrical and magnetic properties related to treatment conditions
68.55.-a Thin film structure and morphology

Radiation effects in ultrathin nitrided oxides prepared by rapid thermal processing

G. Q. Lo, D. K. Shih, W. C. Ting, and D. L. Kwong

Appl. Phys. Lett. 55, 840 (1989); http://dx.doi.org/10.1063/1.102446 (3 pages) | Cited 1 time

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The radiation hardness of metal‐oxide semiconductor capacitors with nitrided oxides prepared by rapid thermal nitridation (RTN) has been studied. The radiation was performed by exposing devices to 50 keV x ray to a dose of 0.5 Mrad (Si). Compared to conventional thermal oxides, the rapid thermal nitrided oxide devices exhibit much less increase in the interface state density (Dit). In addition, it is found that higher RTN temperatures and/or longer durations produce smaller ΔDit. The significant reduction of the interface state generation has been attributed to the strain relief effect due to the incorporation of nitrogen at the Si/SixNyOz interface. The bond strain related models have been discussed to explain the results.
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61.80.Cb X-ray effects
73.20.At Surface states, band structure, electron density of states
81.40.Rs Electrical and magnetic properties related to treatment conditions
81.05.Kf Glasses (including metallic glasses)
81.65.-b Surface treatments

Ion beam induced epitaxial crystallization of GexSi1−x/Si structures

R. G. Elliman, M. C. Ridgway, J. S. Williams, and J. C. Bean

Appl. Phys. Lett. 55, 843 (1989); http://dx.doi.org/10.1063/1.102264 (3 pages) | Cited 13 times

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GexSi1−x alloy layers grown on (100) silicon substrates by molecular beam epitaxy and amorphized by ion irradiation at −196 °C are shown to recrystallize epitaxially during subsequent ion irradiation at 275 °C. This ion beam annealing process has been examined for two different sample configurations: the first consisting of a thin amorphous layer extending from the surface to about half the thickness of the alloy layer, and the second consisting of a thick amorphous layer extending beyond the alloy layer into the underlying silicon. In both cases, ion beam annealing results in epitaxial crystallization of the alloy layer. Results are reported for alloy composition in the range from Ge0.1Si0.9 to Ge0.8Si0.2.
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81.15.Np Solid phase epitaxy; growth from solid phases
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
61.80.Jh Ion radiation effects
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Damage profile of ion‐implanted GaAs by x‐ray photoelectron spectroscopy

Z. H. Lu, A. Azelmad, Y. Trudeau, and A. Yelon

Appl. Phys. Lett. 55, 846 (1989); http://dx.doi.org/10.1063/1.101774 (3 pages) | Cited 2 times

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We report on the use of x‐ray photoelectron spectroscopy for the investigation of radiation damage in GaAs. The technique has been used to profile the damage induced by 7 MeV Si+ ions. Arsenic displaced by the ions is found in an interstitial elementary state. Using chemical etching, we are able to trace the distribution of As displacement. The results are in good agreement with trim calculations of radiation damage. The potential applications of this technique to the study of the nature and distribution of radiation damage are discussed.
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61.80.Jh Ion radiation effects
81.65.-b Surface treatments
61.72.U- Doping and impurity implantation
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients

Optical phonon energies in pseudomorphic alloy strained layers

M. J. L. S. Haines, B. C. Cavenett, and S. T. Davey

Appl. Phys. Lett. 55, 849 (1989); http://dx.doi.org/10.1063/1.101775 (3 pages) | Cited 14 times

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Using Raman scattering we have measured the longitudinal optic phonon energies of Ga1−xInxAs layers with 0.48≤x≤0.55 grown on InP substrates. In order to interpret these data successfully it was necessary to consider the effect of the strain induced by the lattice mismatch. Existing theory has been extended to consider the case of alloy pseudomorphic layers and is approximated to a linear form. This theory is also applied to Ga1−xInxAs on GaAs and compared with previously published data with 0≤x≤0.2. Close agreement between theory and experimental data is found indicating that the Raman technique, combined with this theory, can be used to measure the alloy composition of pseudomorphic strained layers of diamond or zinc blende structure accurately without the need for detailed experimental calibration. It is suggested that this method could be particularly useful for determining the composition of alloy layers in thin layer pseudomorphic Ga1−xInxAs/InP heterostructures.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.30.Fs III-V and II-VI semiconductors
63.20.D- Phonon states and bands, normal modes, and phonon dispersion

Experimental evidence for nucleation during thin‐film reactions

K. R. Coffey, L. A. Clevenger, K. Barmak, D. A. Rudman, and C. V. Thompson

Appl. Phys. Lett. 55, 852 (1989); http://dx.doi.org/10.1063/1.102447 (3 pages) | Cited 65 times

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The reaction between solid layers to form a product phase has been studied using scanning calorimetry of multilayer Nb/Al and Ni/amorphous‐Si thin films. The most striking feature for both materials systems is the occurrence of two maxima in the reaction rate during the formation of a single product phase, suggesting a two step growth process. A model has been developed in which the first step is taken to be the nucleation and two‐dimensional growth to coalescence of the product phase, in the plane of the initial interface. The second step is taken to be the thickening of the product layer by growth perpendicular to the interface plane. The success of this simple model in describing the principal features of the experimental results on two different materials systems suggests that nucleation is an important aspect of phase formation and selection in these thin‐film reactions.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.35.Fx Diffusion; interface formation
68.60.Dv Thermal stability; thermal effects

Spatially selective modification of GaAs/AlGaAs quantum wells by SiO2 capping and rapid thermal annealing

J. Y. Chi, X. Wen, Emil S. Koteles, and B. Elman

Appl. Phys. Lett. 55, 855 (1989); http://dx.doi.org/10.1063/1.101776 (3 pages) | Cited 40 times

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GaAs/AlGaAs quantum wells (QWs), selectively intermixed by SiO2 capping and rapid thermal annealing, have been characterized on a microscale using spatially resolved photoluminescence (PL) spectroscopy. From the evolution of the PL spectra across the boundary between the unmixed and intermixed regions, it was concluded that the transition region is narrower than the 1.5 μm excitation beam diameter. The magnitude of the intermixing was also found to increase with the thickness of the oxide. The present intermixed QWs were found to be stable against subsequent thermal treatment below the temperature limit imposed by the intrinsic interdiffusion. These results demonstrate that the effective band gap of QWs, and their physical properties, can be adjusted by controlling the oxide thickness profile.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
68.35.Fx Diffusion; interface formation
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.55.Cr III-V semiconductors

Heteroepitaxial growth of Ge films on (100) GaAs by pyrolysis of digermane

Djula Eres, Douglas H. Lowndes, J. Z. Tischler, J. W. Sharp, D. B. Geohegan, and S. J. Pennycook

Appl. Phys. Lett. 55, 858 (1989); http://dx.doi.org/10.1063/1.101777 (3 pages) | Cited 6 times

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Pyrolysis of high‐purity digermane (Ge2 H6 ) has been used to grow epitaxial Ge films of high crystalline quality on (100) GaAs substrates in a low‐pressure environment. X‐ray double‐crystal diffractometry shows that fully commensurate, coherently strained epitaxial Ge films can be grown on (100) GaAs at digermane partial pressures of 0.05–40 mTorr for substrate temperatures of 380–600 °C. Amorphous films also were deposited. Information about the crystalline films surface morphology, growth mode, and microstructure was obtained from scanning electron microscopy, cross‐section transmission electron microscopy, and in situ reflectivity measurements. The amorphous‐to‐crystalline transition temperature and the morphology of the crystalline films were both found to depend on deposition conditions (primarily the incidence rate of Ge‐bearing species and the substrate temperature). Epitaxial growth rates using digermane were found to be about two orders of magnitude higher than rates using germane (GeH4 ) under similar experimental conditions.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology

Vacuum ultraviolet photoelectron spectroscopy of (NH4)2S‐treated GaAs (100) surfaces

C. J. Spindt, D. Liu, K. Miyano, P. L. Meissner, T. T. Chiang, T. Kendelewicz, I. Lindau, and W. E. Spicer

Appl. Phys. Lett. 55, 861 (1989); http://dx.doi.org/10.1063/1.101780 (3 pages) | Cited 65 times

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The surface chemistry and band bending of the ammonium sulfide‐treated GaAs (100) surface has been studied using surface‐sensitive synchrotron radiation photoemission spectroscopy. We find that the treatment leaves the GaAs surface terminated with roughly a monolayer of sulfur bonded to both As and Ga atoms. An n‐type barrier height of 0.8 eV is measured. The thermal stability of the various chemical components is studied and various issues of the passivating mechanism are discussed.
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73.20.Hb Impurity and defect levels; energy states of adsorbed species
81.65.-b Surface treatments
81.40.Rs Electrical and magnetic properties related to treatment conditions
68.60.Dv Thermal stability; thermal effects

Observation of the second energy level of the EL2 defect in GaAs by the infrared absorption technique

M. O. Manasreh, W. C. Mitchel, and D. W. Fischer

Appl. Phys. Lett. 55, 864 (1989); http://dx.doi.org/10.1063/1.101623 (3 pages) | Cited 7 times

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The second energy level of the EL2 defect (EL2+/++ ) is observed by using the infrared absorption technique and monochromatic light irradiation in undoped and lightly alloyed unannealed bulk GaAs. The EL2+/++ spectrum exhibits a complex structure and it does not exist in annealed samples. The EL2+/++ →EL20/+ and EL20/+ →EL2+/++ transitions were obtained by illuminating the samples with 0.7≤hν≤0.95 eV and 1.3≤hν≤1.5 eV, respectively. The transformation EL2+/++ ↔EL20/+ can be achieved in less than 10 s and can be repeatedly switched back and forth between the two states.
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71.55.Eq III-V semiconductors
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
78.30.Fs III-V and II-VI semiconductors

Generation of macroscopic steps on patterned (100) vicinal GaAs surfaces

E. Colas, E. Kapon, S. Simhony, H. M. Cox, R. Bhat, K. Kash, and P. S. D. Lin

Appl. Phys. Lett. 55, 867 (1989); http://dx.doi.org/10.1063/1.101624 (3 pages) | Cited 19 times

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We show that macroscopic, as opposed to microscopic, steps can be obtained on a semiconductor vicinal surface when a perturbation has been ‘‘printed’’ on it, prior to epitaxial growth. This generic crystal growth concept has been studied here with the GaAs/AlGaAs system using organometallic chemical vapor deposition. The details of step formation, stabilization, and subsequent propagation have been investigated with scanning electron microscopy. Regular, sawtooth‐like growth patterns have been obtained, with periodic growth rate differences at the step edges. This novel lateral patterning technique was employed to fabricate arrays of quantum wire‐like heterostructures.
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81.65.-b Surface treatments
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
68.55.-a Thin film structure and morphology

Self‐interstitials and the 935 cm−1 band in silicon

H. J. Stein

Appl. Phys. Lett. 55, 870 (1989); http://dx.doi.org/10.1063/1.101625 (3 pages) | Cited 6 times

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Substitutional carbon in Czochralski Si is found to decrease the formation rate for a 935 cm−1 infrared absorption band under neutron irradiation while that for a 965 cm−1 band (interstitial carbon trapped at interstitial oxygen) increases. The observations support a controversial previous assignment of the 935 cm−1 band to a center with interstitial Si trapped by interstitial oxygen.
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78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
61.72.jd Vacancies
61.72.jj Interstitials
61.80.Hg Neutron radiation effects
78.30.Hv Other nonmetallic inorganics

Gettering of gold by rapid thermal processing

B. Hartiti, Vu‐Thuong‐Quat, W. Eichhammer, J.‐C. Muller, and P. Siffert

Appl. Phys. Lett. 55, 873 (1989); http://dx.doi.org/10.1063/1.101626 (3 pages) | Cited 13 times

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We report on the first direct evidence of a gettering effect induced by rapid thermal processing (RTP). Homogeneously gold‐doped silicon is studied before and after RTP by deep level transient spectroscopy measurements of the Au acceptor level. After a 1000 °C/10 s cycle, gold is depleted in three regions below the surfaces, indicating a gettering effect. The mechanism for this RTP‐induced gettering is discussed.
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66.30.J- Diffusion of impurities
81.40.Gh Other heat and thermomechanical treatments
71.55.Ht Other nonmetals
68.35.Fx Diffusion; interface formation

Replacement of magnesium in InGaAs/InP heterostructures during zinc diffusion

F. Dildey, R. Treichler, M.‐C. Amann, M. Schier, and G. Ebbinghaus

Appl. Phys. Lett. 55, 876 (1989); http://dx.doi.org/10.1063/1.101627 (3 pages) | Cited 7 times

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Zn diffusions from spin‐on films have been carried out into n‐InP/p+‐InGaAs/n‐InP heterostructures, which were grown by metalorganic vapor phase epitaxy for heterojunction bipolar transistors with Mg as a p dopant. After diffusion, Mg was completely substituted by Zn and enriched in the spin‐on film. In the presence of Mg, the indiffusion of Zn is strongly enhanced. By varying doping levels and diffusion conditions, the underlying mechanism is studied and compared to recent experiments with Be‐doped AlGaAs/GaAs heterostructures.
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68.35.Fx Diffusion; interface formation
85.30.Pq Bipolar transistors
68.35.Dv Composition, segregation; defects and impurities
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Continuous growth of heavily doped p+‐n+ Si epitaxial layer using low‐temperature photoepitaxy

Tatsuya Yamazaki, Hiroshi Minakata, and Takashi Ito

Appl. Phys. Lett. 55, 879 (1989); http://dx.doi.org/10.1063/1.101628 (3 pages)

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Heavily doped p+ and n+ silicon epitaxial layers were continuously grown at 600 °C using photoenhanced epitaxy. The heavily phosphorus‐doped photoepitaxial layer with a carrier concentration above 1×1017 cm−3 grown on the p− substrate shows very high density surface pits due to phosphorus precipitation, suggesting poor crystal quality. Unexpectedly, when this n+ photoepitaxial layer is continuously grown on a heavily boron‐doped p+ photoepitaxial layer at a boron concentration above 1×1019 cm−3, surface pits completely disappear and crystal quality is greatly improved. The very low growth temperature enabled an extremely abrupt impurity profile to be achieved for the p+‐n+ layer.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Calculation of two‐dimensional quantum‐confined structures using the finite element method

Keisuke Kojima, Kazumasa Mitsunaga, and Kazuo Kyuma

Appl. Phys. Lett. 55, 882 (1989); http://dx.doi.org/10.1063/1.102258 (3 pages) | Cited 20 times

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The finite element method was used for calculating the wave functions and energy levels of electrons in arbitrarily shaped two‐dimensional quantum‐confined structures. The calculated results indicate the possibility of quasi‐quantum wires by simply growing single quantum wells on corrugated substrates.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
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