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5 Mar 1990

Volume 56, Issue 10, pp. 883-981

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Mechanism of picosecond ultraviolet laser sputtering of sapphire at 266 nm

J. L. Brand and A. C. Tam

Appl. Phys. Lett. 56, 883 (1990); http://dx.doi.org/10.1063/1.102617 (3 pages) | Cited 7 times

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Ultraviolet laser sputtering of sapphire was observed to result in droplet ejection when done in air, pressurized air, or in 20 mTorr pressure. Such droplets were collected and studied with scanning electron microscopy and optical microscopy. The collected particles were spherical and ranged in size up to 3 μm in diameter. Some particles appeared to have been molten and splattered on the collection plate. The size of the particles was independent of the ambient pressure. However, the collection efficiency of the collection plate was ∼30 times greater at 20 mTorr pressure as compared to one atmosphere. The similar result for measurements of the sputter depth under a range of background pressure indicates that the mechanism for the laser sputtering of sapphire at 266 nm with 30 ps pulses and a fluence near 10 J/cm2 is independent of the ambient pressure. Redeposition of debris onto the sputtered sample was significantly greater in one atmosphere pressure than in reduced pressure. These findings indicate that hydrodynamic sputtering is the most likely mechanism for the laser sputtering of sapphire at high sputter rates.
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79.20.Ds Laser-beam impact phenomena
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)

Optically steerable photoconducting antennas

B. B. Hu, J. T. Darrow, X.‐C. Zhang, D. H. Auston, and P. R. Smith

Appl. Phys. Lett. 56, 886 (1990); http://dx.doi.org/10.1063/1.102618 (3 pages) | Cited 70 times

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When illuminated by ultrashort optical pulses, large aperture planar photoconductors are shown to radiate a directional electromagnetic pulse which can be steered by varying the angle of incidence of the optical beam.
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84.40.Ba Antennas: theory, components and accessories
72.40.+w Photoconduction and photovoltaic effects

InGaAsP(1.3 μm)/InP vertical‐cavity surface‐emitting laser grown by metalorganic vapor phase epitaxy

Long Yang, Ming C. Wu, Kuochou Tai, Tawee Tanbun‐Ek, and Ralph A. Logan

Appl. Phys. Lett. 56, 889 (1990); http://dx.doi.org/10.1063/1.102619 (3 pages) | Cited 4 times

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We report InGaAsP/InP vertical‐cavity surface‐emitting lasers (VCSELs) with an emission wavelength near 1.3 μm grown by metalorganic vapor phase epitaxy. The VCSEL structure contains a double‐heterostructure cavity, a metal mirror, and a SiO2/Si dielectric stack (three pairs) mirror with a measured reflectivity of 98%. A threshold current as low as 5 mA for 15‐μm‐diam devices with a 1‐μm‐thick active layer at 77 K was achieved, which is close to the best reported value (6 mA) within the accuracy of the pulse measurement. The highest operating temperature was 220 K.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.79.Bh Lenses, prisms and mirrors
71.55.Eq III-V semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Anisotropy of the linear and third‐order nonlinear optical properties of a stretch‐oriented polymer film of poly‐[2, 5‐dimethoxy paraphenylenevinylene]

Jacek Swiatkiewicz, Paras N. Prasad, Frank E. Karasz, Mark A. Druy, and Paul Glatkowski

Appl. Phys. Lett. 56, 892 (1990); http://dx.doi.org/10.1063/1.102620 (3 pages) | Cited 13 times

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Large linear refractive index birefringence, strong dichroic behavior, and highly anisotropic χ(3) have been observed for a uniaxially oriented poly (2, 5‐dimethoxy paraphenylene vinylene) film. A subpicosecond time‐resolved degenerate four‐wave mixing study reveals an unusual behavior. Along the draw direction χ(3) is complex with a negative real part and has a response time that is longer than the optical pulse resolution. In contrast, χ(3) along the transverse direction is largely real and positive. Its response time is much faster, and is limited by the laser pulse width of ∼400 fs.
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78.66.Qn Polymers; organic compounds
78.47.-p Spectroscopy of solid state dynamics
78.20.Fm Birefringence
42.65.-k Nonlinear optics

Intense laser‐induced electron emission from prepoled lead‐lanthanum‐zirconium‐titanate ceramics

K. Geissler, H. Gundel, H. Riege, and J. Handerek

Appl. Phys. Lett. 56, 895 (1990); http://dx.doi.org/10.1063/1.102621 (3 pages) | Cited 11 times

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A sample of lead‐lanthanum‐zirconium‐titanate (PLZT 9/65/35) has been exposed to 6‐ns‐long laser pulses of 266 nm wavelength. The maximum output pulse energy of the laser beam was 300 μJ, the output power density on the sample 5×105 W/cm2, and the beam diameter 3 mm. By applying a moderate extraction voltage of several kilovolts, intense electron beam pulses are emitted from the free sample surface. Their time structure corresponds to the time structure of the laser pulse. Electron beam current intensities of up to 0.1 A and 2 A/cm2 and total charges of 1 nC (corresponding to 20 nC/cm2 ) were measured with a simple Faraday cup. In the range where the parameters of laser intensity and of extraction voltage could be varied their influence on the emitted electron beam current amplitude was determined.
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81.65.-b Surface treatments
84.47.+w Vacuum tubes
85.60.Jb Light-emitting devices
79.20.Ds Laser-beam impact phenomena

Amorphous SiN films grown by hot‐filament chemical vapor deposition using monomethylamine

Kanji Yasui, Hirohisa Katoh, Kazuki Komaki, and Shigeo Kaneda

Appl. Phys. Lett. 56, 898 (1990); http://dx.doi.org/10.1063/1.102622 (3 pages) | Cited 8 times

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Hot‐filament chemical vapor deposition (hot‐filament CVD) of silicon nitride films has been studied using silane and monomethylamine as source gases for the deposition temperature 600–800 °C. The deposition rate was about one order larger than that of thermochemical vapor deposition (thermo‐CVD) using the same gases. The activation energy of the growth rate was 0.2 eV smaller than that of thermo‐CVD. The hydrogen content was below the detection limit of infrared absorption measurements even in the film deposited at 600 °C. The film surface deposited at 700 °C had a smooth specular surface and the flatness of the hot‐filament CVD films was the same as that of thermo‐CVD films deposited at 100–200 °C higher temperatures.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology
73.61.Ng Insulators

Is the observed quantized conductance on small contacts due to coherent ballistic transport?

L. Escapa and N. García

Appl. Phys. Lett. 56, 901 (1990); http://dx.doi.org/10.1063/1.102623 (3 pages) | Cited 11 times

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This letter revises the interpretation of recent experiments showing quantized conductance on GaAs/GaAlAs constrictions or point contacts in terms of coherent ballistic and sequential transport. Our calculations show by using a first iterative self‐consistent procedure that the experimental data can also be reconciled with sequential transport. The mean free path concept in the constriction is discussed in comparison with that of the reservoirs. We conclude that, for the higher modes, the former is much smaller than the latter, implying that in the constriction the transport may be sequential.
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73.40.Cg Contact resistance, contact potential
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.50.Bk General theory, scattering mechanisms

YAG laser direct writing of copper from copper formate films

Heinrich G. Müller

Appl. Phys. Lett. 56, 904 (1990); http://dx.doi.org/10.1063/1.102624 (3 pages) | Cited 10 times

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Very thin copper lines for seeding of chemical copper deposition have been deposited by laser direct writing techniques, using water soluble precursor films from copper formate. Writing speeds of up to 50 mm/s could be reached. The deposition process has a strong influence on the substrate surface, thereby achieving a very stable film adhesion.
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85.40.Ls Metallization, contacts, interconnects; device isolation
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
81.65.-b Surface treatments
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Effect of ozone annealing on the dielectric properties of tantalum oxide thin films grown by chemical vapor deposition

Chiharu Isobe and Masaki Saitoh

Appl. Phys. Lett. 56, 907 (1990); http://dx.doi.org/10.1063/1.103323 (3 pages) | Cited 36 times

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Effects of the heat treatment in flowing oxygen containing ozone of 0.5–1 vol % (O3 annealing) on the dielectric properties of the Ta2O5 thin film (100–200 Å) grown on the Si substrate by the chemical vapor deposition method were investigated. The leakage current was drastically reduced from more than 10−3 to 10−9 A/cm2 in an electric field of 3 MV/cm by the O3 annealing at 400 °C. It was also found that the leakage current was decreased and increased reversibly between alternate O3 annealing and O2 annealing (without ozone). These two states of the leakage current can be attributed to the reproducible change of the oxygen vacancies in the Ta2O5 film.
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81.40.Rs Electrical and magnetic properties related to treatment conditions
77.55.-g Dielectric thin films
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.61.Ng Insulators

Modification of intrinsic strain at lattice‐matched GaInAs/InP interfaces

J. M. Vandenberg, M. B. Panish, R. A. Hamm, and H. Temkin

Appl. Phys. Lett. 56, 910 (1990); http://dx.doi.org/10.1063/1.102625 (3 pages) | Cited 18 times

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We have demonstrated, by high‐resolution x‐ray diffraction, the presence of strained regions on the scale of about one molecular layer at each interface in lattice‐matched GaInAs/InP superlattices grown by gas source molecular beam epitaxy. The existence of these interfacial regions results only from the different group V element in each interface layer of the superlattice and the lack of any significant diffusion between atomic planes during, or subsequent to epitaxy. We have demonstrated that the intrinsic strain at the interfaces of lattice‐matched GaInAs/InP superlattices can be modified on the same near molecular layer scale by altering the beam sequence during growth.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.35.Gy Mechanical properties; surface strains
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.35.Fx Diffusion; interface formation

Auger recombination in bulk and quantum well InGaAs

S. Hausser, G. Fuchs, A. Hangleiter, K. Streubel, and W. T. Tsang

Appl. Phys. Lett. 56, 913 (1990); http://dx.doi.org/10.1063/1.103175 (3 pages) | Cited 48 times

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We report the determination of Auger recombination coefficients in bulk and quantum well InGaAs by time‐resolved luminescence measurements. In bulk InGaAs the coefficient is C=3.2×10−28 cm6/s and has the temperature dependence of the valence‐band Auger effect involving the split‐off valence band. In 11 nm quantum well InGaAs we find C=0.9×10−28 cm6/s, independent of temperature. The Auger coefficient decreases slightly with decreasing well width.
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73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
78.47.-p Spectroscopy of solid state dynamics
78.55.Cr III-V semiconductors

Preparation of TiB2 films by photochemical vapor deposition using a D2 lamp

Seiji Motojima and Hidetoshi Mizutani

Appl. Phys. Lett. 56, 916 (1990); http://dx.doi.org/10.1063/1.103324 (3 pages) | Cited 1 time

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TiB2 films have been prepared by photochemical vapor deposition using a D2 lamp from a TiCl4‐BCl3‐H2‐Ar gas mixture. The deposition temperature of the TiB2 films was lowered 50 °C by irradiation with a D2 lamp as compared to that without irradiation. The deposition rate was increased by 1.5–2.5 times with irradiation.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.20.-n Methods of materials synthesis and materials processing

Effect of impurities on the thermal oxidation process in InP

R. Beserman, C. Cytermann, R. Brener, J. Laborde, I. Salzman, M. Weyers, A. Brauers, and P. Balk

Appl. Phys. Lett. 56, 919 (1990); http://dx.doi.org/10.1063/1.103325 (3 pages) | Cited 2 times

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Sulfur (n‐type) and zinc (p‐type) doped and undoped InP have been thermally oxidized in the temperature range 400 °C≤T≤600 °C. The Raman scattering and Auger electron spectroscopy techniques show that the doping enhances the formation of the crystalline InPO4 phase and favors the growth of crystalline phosphorus at the oxide/InP interface.
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81.65.-b Surface treatments
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.35.Dv Composition, segregation; defects and impurities
78.30.Fs III-V and II-VI semiconductors

Realization and analysis of GaAs/AlAs/In0.1Ga0.9As based resonant tunneling diodes with high peak‐to‐valley ratios at room temperature

R. Kapre, A. Madhukar, K. Kaviani, S. Guha, and K. C. Rajkumar

Appl. Phys. Lett. 56, 922 (1990); http://dx.doi.org/10.1063/1.102626 (3 pages) | Cited 19 times

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Investigations of pseudomorphic resonant tunneling diodes based on the GaAs/AlAs/In0.1Ga0.9As material system reveal that the use of undoped In0.1Ga0.9As spacer layers gives rise to a significantly enhanced peak‐to‐valley ratio of 3.2 and 14 at 300 and 77 K, respectively, as opposed to 2 and 5 obtained with the use of conventional GaAs spacers in an otherwise identical structure. This is achieved without any significant degradation of the peak current density but rather through reduction of the undesired nonresonant valley current. Comparison of the experimental results with calculations done using the Airy function transfer matrix approach indicates that the Γ‐X discontinuity at the GaAs/AlAs and In0.1Ga0.9 As/AlAs interface is relevant for electron tunneling, along with the smaller transverse effective mass of 0.19m0 in the AlAs X valley. We also find that In0.1Ga0.9As layers grown under an excess As‐stabilized growth condition give better results than those grown under a barely As‐stabilized condition.
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85.30.De Semiconductor-device characterization, design, and modeling
71.55.Eq III-V semiconductors

Oxide interfacial layers in Au ohmic contacts to p‐type Hg1−xCdxTe

V. Krishnamurthy, A. Simmons, and C. R. Helms

Appl. Phys. Lett. 56, 925 (1990); http://dx.doi.org/10.1063/1.102627 (3 pages)

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Annealed Au contacts to p‐type Hg1−xCdxTe with thin interfacial oxide layers exhibit ohmic behavior. These interfacial layers have been produced by plasma oxidizing the Hg1−xCdxTe surface prior to Au evaporation or as a result of electroless Au deposition from AuCl3 which also produces an interfacial layer. We believe this ohmic behavior is primarily a result of the low interface state density at the interfacial layer/Hg1−xCdxTe interface and in addition, a 100 °C anneal promotes a further reduction in the interface state density and thus lowered the contact resistance. In comparison, as‐deposited and annealed Au contacts without a thin interfacial layer were rectifying with a large barrier height.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.30.+y Surface double layers, Schottky barriers, and work functions

In‐plane‐gated quantum wire transistor fabricated with directly written focused ion beams

A. D. Wieck and K. Ploog

Appl. Phys. Lett. 56, 928 (1990); http://dx.doi.org/10.1063/1.102628 (3 pages) | Cited 98 times

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A new unipolar electronic device with a quasi‐one‐dimensional (1D) tunable carrier channel defined by directly written focused ion beams has been fabricated and characterized. Special features of the device are simple and rapid fabrication in one single technology step, inherent self‐alignment, and linear instead of planar gates with very low capacitances. High integration as well as ultrahigh speed operation in logical and linear applications are feasible. The striking new aspect of this in‐plane‐gate structure is that the confining electric field is parallel to the two‐dimensional electron gas, and the distorted, insulating region serves as a dielectric. Ballistic 1D transport is observed at low temperatures, and field‐effect transistor operation of the device is demonstrated up to room temperature.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
85.30.Hi Surface barrier, boundary, and point contact devices
85.30.Tv Field effect devices

Acceptor diffusion across InGaAs/InP heterointerfaces

P. Ambrée, A. Hangleiter, M. H. Pilkuhn, and K. Wandel

Appl. Phys. Lett. 56, 931 (1990); http://dx.doi.org/10.1063/1.102629 (3 pages) | Cited 6 times

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Results on Zn and Cd diffusion across InGaAs/InP and InP/InGaAs heterointerfaces are reported. Drastic changes in the group III sublattice were obtained near the interface when Zn diffused from an InGaAs top layer across the heterojunction. Diffusion from an InP top layer, as well as Cd diffusion, or simple annealing of the samples had no measurable influence on the stability of the interfaces. The strong interdiffusion of In and Ga host atoms as well as the Zn gettering at the interface is discussed in terms of two diffusion mechanisms, namely, the ‘‘kick‐out’’ mechanism and the vacancy mechanism. The activation energy for the Zn‐stimulated Ga interdiffusion across the InGaAs/InP heterojunction was estimated to be EA =3.8±0.3 eV.
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66.30.J- Diffusion of impurities
61.72.U- Doping and impurity implantation
68.35.Fx Diffusion; interface formation

Effects of the local environment on the properties of DX centers in Si‐doped GaAs and dilute AlxGa1−xAs alloys

E. Calleja, F. Garcia, A. Gomez, E. Muñoz, P. M. Mooney, T. N. Morgan, and S. L. Wright

Appl. Phys. Lett. 56, 934 (1990); http://dx.doi.org/10.1063/1.102630 (3 pages) | Cited 59 times

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Si‐doped GaAs and dilute AlxGa1−xAs alloys under hydrostatic pressure have been studied using deep level transient spectroscopy (DLTS). In GaAs the DLTS spectrum of the DX center is a single peak. In AlGaAs however, multiple peaks, resulting from different thermal emission rates from donors having different numbers of Al atoms as near neighbors, are observed. The pressure dependence of the electron occupation of individual DX levels shows that the larger the number of Al atoms near the Si donor, the lower the energy position of the DX level.
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71.55.Eq III-V semiconductors

Suppression of emitter size effect on the current‐voltage characteristics of AlGaAs/GaAs heterojunction bipolar transistors

S. Noor Mohammad, J. Chen, J.‐I. Chyi, and H. Morkoç

Appl. Phys. Lett. 56, 937 (1990); http://dx.doi.org/10.1063/1.102631 (3 pages) | Cited 8 times

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The effect of emitter periphery‐to‐area ratio on the current‐voltage characteristics of Npn AlGaAs/GaAs heterojunction bipolar transistors has been studied. It is shown that an electric field generated by a properly controlled nonuniform doping of the base region can very significantly suppress the reduction in current gain when the emitter area‐to‐periphery ratio is decreased, as is the case in high‐speed devices. The superiority of doping‐induced grading to compositional grading is discussed.
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85.30.Pq Bipolar transistors
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Direct observation of the silicon nitride on amorphous silicon interface states

A. V. Gelatos and J. Kanicki

Appl. Phys. Lett. 56, 940 (1990); http://dx.doi.org/10.1063/1.103271 (3 pages) | Cited 11 times

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We report on the investigation of the silicon nitride/hydrogenated amorphous silicon interface by capacitance measurements. We observe that the ‘‘slow’’ interface states are located inside the silicon nitride layer, while the energy distribution of the ‘‘fast’’ interface states is peaked at 0.7 eV below the hydrogenated amorphous silicon conduction band with an integrated value of 2×1011 cm−2.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
78.30.-j Infrared and Raman spectra
78.40.-q Absorption and reflection spectra: visible and ultraviolet
73.20.Hb Impurity and defect levels; energy states of adsorbed species

Enhanced magnetic anisotropy at the percolation threshold of Fe‐SiO2 composite thin films

R. L. Holtz, P. Lubitz, and A. S. Edelstein

Appl. Phys. Lett. 56, 943 (1990); http://dx.doi.org/10.1063/1.103272 (3 pages) | Cited 15 times

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Ferromagnetic resonance (FMR) measurements at 9.6 GHz and room temperature are reported for very thin (50 Å) sputtered films of Fe‐SiO2 with volume fractions of Fe, f, spanning the percolation threshold at fc=0.57. It is inferred from the FMR linewidths that the magnetic anisotropy of the percolating composite of Fe particles peaks at fc. Possible mechanisms for this anisotropy enhancement are examined and it is argued that the shape anisotropy of the percolation clusters may be the principal contribution. These results and our interpretations provide a possible explanation for the peak in the coercivity near the percolation threshold of Fe‐SiO2 composite films recently reported by S. H. Liou and C. L. Chien [Appl. Phys. Lett. 52, 512 (1988)].
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75.30.Gw Magnetic anisotropy
75.50.Tt Fine-particle systems; nanocrystalline materials
76.50.+g Ferromagnetic, antiferromagnetic, and ferrimagnetic resonances; spin-wave resonance
75.70.-i Magnetic properties of thin films, surfaces, and interfaces

HgCdTe 128×128 infrared focal plane arrays on alternative substrates of CdZnTe/GaAs/Si

S. M. Johnson, M. H. Kalisher, W. L. Ahlgren, J. B. James, and C. A. Cockrum

Appl. Phys. Lett. 56, 946 (1990); http://dx.doi.org/10.1063/1.102632 (3 pages) | Cited 26 times

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High quality p‐on‐n heterojunction infrared detectors have been fabricated using controllably doped HgCdTe grown by liquid phase epitaxy on CdZnTe/GaAs/Si alternative substrates grown by metalorganic chemical vapor deposition and used to demonstrate the first 128×128 focal plane array fabricated on these materials. Detectors with a cutoff wavelength of 6.0 μm and a resistance‐area product R0 Aj average of 6.0×104 Ω cm2 at 80 K for 16 189 detectors in the array were achieved, and for operating temperatures above approximately 120 K were comparable in performance to detectors co‐fabricated on standard lattice‐matched bulk CdZnTe substrates. Below 120 K, detector performance was limited by excess generation‐recombination current, probably caused by a higher threading dislocation density compared with that for the bulk substrates.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
85.30.De Semiconductor-device characterization, design, and modeling
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics

Evidence for the existence of a negatively charged hydrogen species in plasma‐treated n‐type Si

A. J. Tavendale, S. J. Pearton, and A. A. Williams

Appl. Phys. Lett. 56, 949 (1990); http://dx.doi.org/10.1063/1.102633 (3 pages) | Cited 48 times

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See Also: Erratum

Show Abstract
We demonstrate the drift of a donor‐passivating hydrogen species under the action of the electric field in the depletion region of a reverse‐biased Au/n‐Si Schottky diode hydrogenated by exposure to a low‐frequency discharge. The redistribution is explained by the unidirectional drift of a negatively charged passivating species and is confirmed by secondary‐ion mass spectrometry profiling in deuterated diodes. The results are consistent with the presence of an acceptor level for hydrogen in n‐type Si, and are analogous to the situation in p‐type Si where drift experiments reveal the existence of positively charged hydrogen donor species.
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81.40.Rs Electrical and magnetic properties related to treatment conditions
71.55.Ht Other nonmetals
66.30.J- Diffusion of impurities
85.30.Hi Surface barrier, boundary, and point contact devices

Interband tunneling in single‐barrier InAs/AlSb/GaSb heterostructures

R. Beresford, L. F. Luo, K. F. Longenbach, and W. I. Wang

Appl. Phys. Lett. 56, 952 (1990); http://dx.doi.org/10.1063/1.102634 (3 pages) | Cited 23 times

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Negative differential resistance due to interband tunneling has been observed at room temperatures for the first time in polytype heterostructures of InAs/AlSb/GaSb. The peak‐to‐valley ratio is about 1.7:1 (5.5:1 at 77 K) for an AlSb barrier width of 2.5 nm. The peak current density is studied as a function of barrier width and compared to calculations based on the two‐band model.
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73.40.Gk Tunneling
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.30.De Semiconductor-device characterization, design, and modeling
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Diffusion‐enhanced epitaxial growth of thickness‐modulated low‐loss rib waveguides on patterned GaAs substrates

E. Colas, A. Shahar, and W. J. Tomlinson

Appl. Phys. Lett. 56, 955 (1990); http://dx.doi.org/10.1063/1.102590 (3 pages) | Cited 6 times

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Rib waveguides have been fabricated without any post‐crystal growth processing steps. The ribs are defined by the two nongrowth (111)B surfaces that develop at each edge of (011) mesas on a patterned GaAs substrate during organometallic chemical vapor deposition (OMCVD) of GaAs/AlGaAs structures. Propagation losses as low as 0.6 dB/cm at 1.52 μm wavelength have been obtained, which is attributed to the smoothness of the (111)B facets defining the GaAs guiding layer. This study revealed the importance of surface diffusion‐enhanced crystal growth when a growth surface is adjacent to a nongrowth surface such as a (111)B facet. This effect was quantified here and its magnitude suggests that the OMCVD technique would be well suited for the growth of structures tapered in three dimensions, of interest for integrated optics applications.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
42.79.Gn Optical waveguides and couplers
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
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