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19 Mar 1990

Volume 56, Issue 12, pp. 1083-1188

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Photon avalanche upconversion laser at 644 nm

M. E. Koch, A. W. Kueny, and W. E. Case

Appl. Phys. Lett. 56, 1083 (1990); http://dx.doi.org/10.1063/1.103328 (3 pages) | Cited 44 times

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We have obtained efficient laser action from Pr‐doped LaCl3 using a novel pumping method. Pump energy is coupled into the crystal through Pr ions in an excited state rather than the ground state. Excited‐state absorption is made possible by a regenerative feedback process (the photon avalanche) utilizing cross relaxation to convert the energy of a single ion in a high‐lying state into energy shared by multiple lower lying state ions.
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42.55.Rz Doped-insulator lasers and other solid state lasers
78.45.+h Stimulated emission

Photorefractive self‐defocusing

Mordechai Segev, Yoav Ophir, and Baruch Fischer

Appl. Phys. Lett. 56, 1086 (1990); http://dx.doi.org/10.1063/1.103329 (3 pages) | Cited 15 times

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Self‐defocusing of a Gaussian light beam in a bulk photorefractive BaTiO3 crystal is demonstrated. This is a low light intensity process which results from the coupling and power transfer between the spatial frequency components of the beam. We use this effect in photorefractive waveguide structure for all‐optical switching with very low light powers.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
78.20.Bh Theory, models, and numerical simulation

Band‐edge photorefractive effect in semiconductors

Afshin Partovi, Alan Kost, Elsa M. Garmire, George C. Valley, and Marvin B. Klein

Appl. Phys. Lett. 56, 1089 (1990); http://dx.doi.org/10.1063/1.102576 (3 pages) | Cited 24 times

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We report here for the first time, two‐beam coupling energy transfer using the Franz–Keldysh electrorefractive effect in photorefractive semiconductors. A large beam coupling gain coefficient (Γ=2.8 cm−1) exceeding the absorption coefficient (α=2.0 cm−1) is obtained in undoped semi‐insulating GaAs using the new photorefractive process. The new photorefractive process differs from conventional photorefractivity in that the direction of energy transfer is dictated by the direction of an externally applied electric field. Using a moving grating technique and combining the electrorefractive grating with the conventional electro‐optic grating, a very large gain Γ=16.3 cm−1 (α=3 cm−1, crystal length l=4mm) resulting in net amplification by more than a factor of 200 has been demonstrated.
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78.20.Jq Electro-optical effects
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks

Operation of an X‐band dielectric Cherenkov maser amplifier

E. Garate, H. Kosai, K. Evans, A. Fisher, R. Cherry, and W. Main

Appl. Phys. Lett. 56, 1092 (1990); http://dx.doi.org/10.1063/1.102577 (3 pages) | Cited 9 times

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A dielectric Cherenkov maser has operated as an amplifier at a frequency of 9.8 GHz. The amplifier consisted of an electron beam interacting with the TM01 mode of a cylindrical, dielectric lined waveguide with the rf input provided by a tunable (9–10 GHz), 10 kW magnetron. The dielectric constant of the liner was 10 with inner and outer radii of 1.0 and 1.27 cm, respectively. At electron beam voltage and current of 190 kV and 90 A, respectively, the measured power gain of the amplifier was 11 dB over a 21 cm interaction length with a pulse length of approximately 1 μs.
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84.40.Ik Masers; gyrotrons (cyclotron-resonance masers)

Multielectrode quantum well laser for digital switching

A. F. J. Levi, R. N. Nottenburg, R. A. Nordin, T. Tanbun‐Ek, and R. A. Logan

Appl. Phys. Lett. 56, 1095 (1990); http://dx.doi.org/10.1063/1.102578 (3 pages) | Cited 9 times

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A multielectrode laser can be used to perform digital logic functions and threshold detection. In addition, the intrinsic gain in these devices allows control of lasing light output without using conventional high‐current electrical switches. Device potential is illustrated by demonstrating logical and operation (demultiplexing) at 1.5 Gbit s−1 with a bit error rate of <10−11 s−1.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.By Design of specific laser systems
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
42.65.Pc Optical bistability, multistability, and switching, including local field effects

Dynamic etch mask technique for fabricating tapered semiconductor optical waveguides and other structures

A. Shahar, W. J. Tomlinson, A. Yi‐Yan, M. Seto, and R. J. Deri

Appl. Phys. Lett. 56, 1098 (1990); http://dx.doi.org/10.1063/1.102579 (3 pages) | Cited 10 times

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Using a novel dynamic etch mask technique and wet chemical etchants, we have produced semiconductor structures with tapered thicknesses, with horizontal slope angles as small as 0.9°. With this technique we have fabricated GaAs/GaAlAs rib optical waveguides in which the etch depth tapered from 0.2 to 1.0 μm over a distance of 50 μm, resulting in a 2× change in mode size, with an excess taper loss of less than 0.2 dB. The technique is capable of producing tapers in different orientations, at arbitrary locations on a sample, and appears to be useful for a wide variety of materials systems and devices.
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42.79.Gn Optical waveguides and couplers
42.82.-m Integrated optics
81.65.-b Surface treatments

Thermal equilibrium behavior in inhomogeneous, undoped amorphous silicon

Jin Jang, Seung Kyu Lee, Jae Boong Kim, Hye Yong Chu, and Choochon Lee

Appl. Phys. Lett. 56, 1101 (1990); http://dx.doi.org/10.1063/1.102580 (3 pages) | Cited 3 times

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We report a new thermal equilibrium behavior in inhomogeneous, undoped amorphous silicon. The room‐temperature conductivity increases by two orders of magnitude compared with the annealed value just after fast cooling from above 180 °C. The decay of the excess conductivity follows (time)−1 behavior, which is independent of the temperature. We suggest a possible explanation based on the material inhomogeneity.
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72.80.Ng Disordered solids
64.70.P- Glass transitions of specific systems
64.70.Q- Theory and modeling of the glass transition
66.30.J- Diffusion of impurities
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Anomalous inductive effect in selenium Schottky diodes

C. H. Champness and W. R. Clark

Appl. Phys. Lett. 56, 1104 (1990); http://dx.doi.org/10.1063/1.102581 (3 pages) | Cited 19 times

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A region of anomalous negative capacitance has been observed with forward bias in Se‐Tl Schottky evaporated layer structures. The effect, which is more prevalent in diodes with lower series resistance, is due to an inductive contribution to the impedance that is believed to arise from high‐level injection of minority electrons into the bulk selenium.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Sx Metal-semiconductor-metal structures
72.20.Ht High-field and nonlinear effects
85.30.Hi Surface barrier, boundary, and point contact devices

Selective heteroepitaxial growth of Si1−xGex using gas source molecular beam epitaxy

Hiroyuki Hirayama, Masayuki Hiroi, Kazuhisa Koyama, and Toru Tatsumi

Appl. Phys. Lett. 56, 1107 (1990); http://dx.doi.org/10.1063/1.102582 (3 pages) | Cited 26 times

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Si1−xGex heteroepitaxial layers have been grown on Si(100) surfaces by gas source molecular beam epitaxy. Si2H6 and GeH4 were used as the Si and Ge source gases, respectively. The Ge mole fraction x in the grown film was found to be controlled by the GeH4 flow rate. The growth rate decreased gradually with increasing GeH4 flow rate. Selective epitaxial growth of Si1−xGex using a SiO2 mark on a Si(100) substrate was successfully achieved.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
85.30.Pq Bipolar transistors

Linewidth of free excitons in quantum wells: Contribution by alloy disorder scattering

P. K. Basu

Appl. Phys. Lett. 56, 1110 (1990); http://dx.doi.org/10.1063/1.102583 (3 pages) | Cited 10 times

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A theory is developed for the luminescence linewidth in a quantum well made of ternaries when the two‐dimensionally free excitons undergo alloy disorder scattering. The expression for linewidth shows a L−1 dependence on the well width L for infinite barrier height. For thin wells leakage of wave function into the barrier is considered. A comparison between the experimental data and the present values points out the dominant role of alloy disorder scattering. For wells thinner than 40 Å the calculated values decrease with decreasing well width, indicating the importance of surface roughness scattering.
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71.35.-y Excitons and related phenomena
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Influence of barrier inhomogeneities on noise at Schottky contacts

Herbert H. Güttler and Jürgen H. Werner

Appl. Phys. Lett. 56, 1113 (1990); http://dx.doi.org/10.1063/1.102584 (3 pages) | Cited 44 times

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Electronic properties of Schottky diodes depend sensitively on spatial inhomogeneities of the metal/semiconductor interface. We find that, contrary to previous theories for low‐frequency noise, the electronic properties of Schottky contacts cannot be understood if one neglects spatial fluctuations of the Schottky barrier height. Our systematic investigation of several silicide/silicon diodes yields as an empirical law that excess noise increases drastically when the standard deviation σs of the spatial distribution of Schottky barrier heights exceeds the critical threshold value of 2kT.
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73.30.+y Surface double layers, Schottky barriers, and work functions
72.70.+m Noise processes and phenomena

Thermal processing of strained GaInAs/GaAs high hole mobility transistor structures

W. Gillin, Y. S. Tang, N. J. Whitehead, K. P. Homewood, B. J. Sealy, M. T. Emeny, and C. R. Whitehouse

Appl. Phys. Lett. 56, 1116 (1990); http://dx.doi.org/10.1063/1.102585 (3 pages) | Cited 9 times

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We have studied the resistance to thermal processing of a realistic strained‐layer device structure: a GaAs/GaInAs p‐type modulation‐doped field‐effect transistor layer. The integrity of the structure was monitored using the photoluminescence from the strained quantum well in the active region of the structure. No evidence of mixing or strain relaxation was observed when samples were annealed at 750 °C for 5 h. At higher temperatures, 900 °C and above, mixing is observed and values for the interdiffusion constants and the activation energy obtained.
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81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
61.72.Bb Theories and models of crystal defects
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
85.30.Tv Field effect devices

Plasmaless cleaning process of silicon surface using chlorine trifluoride

Yoji Saito, Osamu Yamaoka, and Akira Yoshida

Appl. Phys. Lett. 56, 1119 (1990); http://dx.doi.org/10.1063/1.102586 (3 pages) | Cited 2 times

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Plasmaless etching using ClF3 gas around room temperature has been investigated for the silicon substrates with the various thicknesses of native oxide. The native oxide can be removed with ClF3 gas. A specular surface is obtained by ultraviolet light irradiation which remarkably accelerates the removal of the native oxide without changing the etch rate of silicon. The etched surface is analyzed with Auger electron measurement, indicating the existence of Cl atoms on it.
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81.65.-b Surface treatments
82.50.Bc Processes caused by infrared radiation
82.50.Hp Processes caused by visible and UV light
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics

Identification of band‐gap states by deep level transient spectroscopy on radioactive probes: The case of Au and Pt in silicon

Jon Wulff Petersen and Jacob Nielsen

Appl. Phys. Lett. 56, 1122 (1990); http://dx.doi.org/10.1063/1.102587 (3 pages) | Cited 37 times

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The deep level transient spectroscopy technique has been applied to silicon doped with radioactive impurities. The disappearance or appearance of features in the spectra following the transmutation of the incorporated radioactive atoms identifies an impurity involved in the centers observed. Results for Au and Pt diffused in Si are presented showing that Au occupies the same lattice position as Pt, which is known from electron paramagnetic resonance measurements to be substitutional.
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71.55.Eq III-V semiconductors
61.80.Jh Ion radiation effects

Synchrotron‐radiation‐stimulated desorption of O+ ions from an oxidized silicon surface

Michio Niwano, Hitoshi Katakura, Yuji Takakuwa, Nobuo Miyamoto, Atsushi Hiraiwa, and Kunihiro Yagi

Appl. Phys. Lett. 56, 1125 (1990); http://dx.doi.org/10.1063/1.102588 (3 pages) | Cited 10 times

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The photon‐stimulated desorption of ions from a naturally oxidized Si(100) surface has been studied using synchrotron radiation (SR). For mass analysis of the PSD ions, the time‐of‐flight method was utilized. Desorption of O+ ions is clearly observed on the surface during exposure to unmonochromatized SR in the vacuum ultraviolet (VUV) region. Si 2p core level photoemission measurements show that the photoemission peak corresponding to silicon oxide is reduced in intensity after exposure to the radiation. The present experimental results indicate the possibility of removing a thin SiO2 layer on a Si(100) surface at low temperatures by exposing the surface to SR in the VUV region.
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81.65.-b Surface treatments
82.50.Bc Processes caused by infrared radiation
82.50.Hp Processes caused by visible and UV light
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics

Single‐monolayer quantum wells of GaInAs in InP grown by metalorganic vapor phase epitaxy

W. Seifert, J.‐O. Fornell, L. Ledebo, M.‐E. Pistol, and L. Samuelson

Appl. Phys. Lett. 56, 1128 (1990); http://dx.doi.org/10.1063/1.102589 (3 pages) | Cited 23 times

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GaInAs/InP quantum wells differing in thickness between 1 and 20 monolayers (1 monolayer≊2.93 Å) have been grown by low‐pressure (50 mbar) metalorganic vapor phase epitaxy and investigated by 2 K photoluminescence. To our knowledge this is the first observation of the one monolayer quantum well. Well‐resolved photoluminescence peaks were observed and were attributed to recombination of excitons bound to quantum wells of defined monolayer thickness. The growth rate could be adjusted to produce a one monolayer quantum well. Its photoluminescence peak was observed at 1.245 eV, corresponding to a quantum confinement shift of 434 meV. The full width at half maximum of this peak was only 8 meV.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
73.61.Ey III-V semiconductors
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Effect of doping on the thermal oxidation of GaAs

N. Levinsohn, R. Beserman, C. Cytermann, R. Brener, Y. L. Khait, G. K. Regel, J. Musolf, M. Weyers, A. Brauers, and P. Balk

Appl. Phys. Lett. 56, 1131 (1990); http://dx.doi.org/10.1063/1.102540 (3 pages) | Cited 9 times

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The influence of n‐type Si and p‐type Zn dopants on the low‐temperature thermal oxidation of GaAs was studied by Raman scattering and Auger electron spectroscopy. It was found that the oxidation process is significantly affected by the dopants, resulting in a much thinner oxide layer than that obtained in undoped GaAs. The arsenic liberated by the oxidation reaction was observed to accumulate at the oxide/GaAs interface. The process of free As buildup at the interface is accompanied by its crystallization and both processes are strongly enhanced by the presence of dopants.
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81.65.-b Surface treatments
78.30.Fs III-V and II-VI semiconductors
79.20.Fv Electron impact: Auger emission
81.40.Gh Other heat and thermomechanical treatments

Vapor deposition of high‐purity GaAs epilayers using monoethylarsine

D. M. Speckman and J. P. Wendt

Appl. Phys. Lett. 56, 1134 (1990); http://dx.doi.org/10.1063/1.102541 (3 pages) | Cited 12 times

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High‐purity GaAs epitaxial layers have been successfully grown using the novel organoarsine reagent source, monoethylarsine (EtAsH2), with trimethylgallium (Me3Ga) as the gallium reagent. Films were found to be n type for all growth parameters examined (V/III=5–30, growth temperature=550–650 °C). Film quality improved as V/III ratio increased, whereas the optimum growth temperature ranged between 575 and 600 °C. The highest purity film produced using EtAsH2 and Me3Ga was grown using a V/III ratio of 30 and a growth temperature of 575 °C. This epilayer exhibited mobilities of 55 300 cm2/V s and 7200 cm2/V s at 77 and 300 K, respectively (as determined by van der Pauw–Hall measurements), and had a net carrier concentration of 6×1014 cm−3. These results closely rival those of the best arsine alternatives studied to date, and indicate that EtAsH2 is an extremely promising reagent to replace arsine for use in vapor deposition applications.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Very high tin doping of Ga0.47In0.53As by molecular beam epitaxy

M. B. Panish, R. A. Hamm, L. C. Hopkins, and S. N. G. Chu

Appl. Phys. Lett. 56, 1137 (1990); http://dx.doi.org/10.1063/1.102542 (3 pages) | Cited 8 times

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The incorporation of Sn into Ga0.47In0.53As grown at 450 °C by hydride source molecular beam epitaxy at concentrations ranging from about 3×1018 to 1×1021 Sn/cm3 has been investigated. Sn is a well behaved donor to about n=1020 cm−3, although increasing compensation is noted with increasing doping. At total concentrations beyond about 1020 cm−3 added Sn is not electrically active although the epitaxial quality remains high without noticeable morphology changes, defects, or precipitates, to at least 1021 Sn/cm3 .
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
61.72.U- Doping and impurity implantation

Short time electron cyclotron resonance hydrogenation of polycrystalline silicon thin‐film transistor structures

R. A. Ditizio, G. Liu, S. J. Fonash, B.‐C. Hseih, and D. W. Greve

Appl. Phys. Lett. 56, 1140 (1990); http://dx.doi.org/10.1063/1.102543 (3 pages) | Cited 39 times

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Electron cyclotron resonance plasmas have been used to produce the most effective, shortest time plasma hydrogenation of thin‐film polycrystalline silicon transistors yet reported. We demonstrate that significant improvement in device characteristics can be achieved with these plasmas using exposure times of the order of only 1 min and that 5 min exposures give saturated characteristics of a 2 V threshold voltage, a 65 cm2/V s mobility, and a 107 on/off ratio. We also explore the pressure and power level dependence of this passivation, as well as the effects of shielding with a grid, and show that the more efficient and more stable electron cyclotron resonance hydrogen exposures are at lower pressures.
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73.61.Ey III-V semiconductors
72.60.+g Mixed conductivity and conductivity transitions
81.40.Rs Electrical and magnetic properties related to treatment conditions
85.40.Ls Metallization, contacts, interconnects; device isolation

Absolute pressure dependence of the second ionization level of EL2 in GaAs

D. E. Bliss, D. D. Nolte, W. Walukiewicz, E. E. Haller, and J. Lagowski

Appl. Phys. Lett. 56, 1143 (1990); http://dx.doi.org/10.1063/1.102544 (3 pages) | Cited 7 times

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We report the results of deep level transient spectroscopy experiments with the second ionization level of the double donor defect (EL2) under uniaxial stress in p‐type GaAs. We measure the shift in the hole emission rate as a function of stress applied in the [100] and [110] directions. By modeling the valence band with two independently displacing bands and appropriately derived effective masses, we determine the absolute hydrostatic pressure derivative of the defect to be 39±15 meV GPa−1. The shear contribution is negligible. These results are very different from those obtained for the first ionization level, which has a much higher absolute pressure derivative of 90 meV GPa−1.
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71.55.Eq III-V semiconductors

Optically excited minority‐electron velocity in selectively Be‐doped AlGaAs/GaAs/AlGaAs single quantum wells

Naoteru Shigekawa, Tomofumi Furuta, Koichi Maezawa, and Takashi Mizutani

Appl. Phys. Lett. 56, 1146 (1990); http://dx.doi.org/10.1063/1.102545 (3 pages) | Cited 3 times

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The minority‐electron velocity versus electric field (v‐E) relationship was measured for selectively Be‐doped Al0.5Ga0.5As/GaAs/Al0.5Ga0.5As single quantum wells with different well‐layer thicknesses by means of the time‐of‐flight (TOF) method at room temperature. It was found that the electron drift velocity for the 200‐Å‐thick quantum well is suppressed in comparison with those for the 600‐Å‐thick and 2000‐Å‐thick wells. This suppression is successfully explained by considering that the electron‐hole interaction is enhanced in narrower wells due to a larger overlap of the wave functions of electrons and holes.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.61.Ey III-V semiconductors
73.50.Dn Low-field transport and mobility; piezoresistance
73.50.Fq High-field and nonlinear effects

Well‐width dependence of intersubband absorption in InGaAs/InAlAs multiquantum wells

Hiromitsu Asai and Yuichi Kawamura

Appl. Phys. Lett. 56, 1149 (1990); http://dx.doi.org/10.1063/1.102546 (3 pages) | Cited 11 times

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The well‐width dependence of intersubband absorption in InGaAs/InAlAs multiquantum wells grown by molecular beam epitaxy is investigated. The energies of the absorption peaks decrease from 300 to 100 meV with an increasing well width from 35 to 200 Å. This well‐width dependence of the peak energy is in good agreement with theoretical calculations. For a wide quantum well, two sharp absorption peaks were observed, including the transitions from the second to the third subbands.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.30.Fs III-V and II-VI semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Luminescence spectra of an n‐channel metal‐oxide‐semiconductor field‐effect transistor at breakdown

N. C. Das and B. M. Arora

Appl. Phys. Lett. 56, 1152 (1990); http://dx.doi.org/10.1063/1.102547 (2 pages) | Cited 10 times

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Photon emission occurs from the drain gate boundary of a metal‐oxide‐semiconductor field‐effect transistor when drain bias exceeds the drain‐to‐source breakdown value. Spectral measurement of luminescence has been carried out over a wide range 0.7–3.1 eV in order to understand the origin of the emission. Three different types of detectors are used to measure the luminescence spectrum. A continuous broad spectrum is observed with a peak near 1.0 eV. The emission intensity decreases almost exponentially in the higher energy range.
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78.55.Cr III-V semiconductors
77.22.Jp Dielectric breakdown and space-charge effects
85.30.Tv Field effect devices

Enhanced hot‐electron photoluminescence from heavily carbon‐doped GaAs

B. J. Aitchison, N. M. Haegel, C. R. Abernathy, and S. J. Pearton

Appl. Phys. Lett. 56, 1154 (1990); http://dx.doi.org/10.1063/1.102548 (3 pages) | Cited 18 times

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An enhancement of hot‐electron photoluminescence due to degenerate conditions in the valence band has been observed in metalorganic molecular beam epitaxial grown GaAs:C with net acceptor concentration of up to 4×1020 cm−3. The photoluminescence (PL) was studied as a function of free‐carrier concentration and sample temperature. Comparison of the PL spectra from the heavily doped GaAs to that of undoped material shows a peak shift to lower energy coupled with a greatly enhanced high‐energy tail extending into the visible region of the spectrum. At 300 K, luminescence at 1.8 eV is observed at 20% the intensity of the peak luminescence at 1.36 eV.
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78.55.Cr III-V semiconductors
71.55.Eq III-V semiconductors
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