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26 Mar 1990

Volume 56, Issue 13, pp. 1195-1292

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Binary phase wave fronts reconstructed from internal reflection metal on glass holograms

M. R. Taghizadeh, J. Turunen, and A. Vasara

Appl. Phys. Lett. 56, 1195 (1990); http://dx.doi.org/10.1063/1.102557 (3 pages) | Cited 1 time

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We introduce a novel method for generating an arbitrary binary phase wave front with a metal on glass binary amplitude computer‐generated hologram. Use is made of the phase delays that occur in total internal reflection and in reflection from a glass‐metal interface. The experimental verification is presented by applying the method to reconstruction of a Dammann grating [H. Dammann and K. Görtler, Opt. Commun. 3, 312 (1971)] array generator.
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42.40.Ht Hologram recording and readout methods
42.30.Kq Fourier optics
42.40.My Applications
42.25.Gy Edge and boundary effects; reflection and refraction

Fabrication of a two‐dimensional phased array of vertical‐cavity surface‐emitting lasers

Hoi‐Jun Yoo, A. Scherer, J. P. Harbison, L. T. Florez, E. G. Paek, B. P. Van der Gaag, J. R. Hayes, A. Von Lehmen, E. Kapon, and Young‐Se Kwon

Appl. Phys. Lett. 56, 1198 (1990); http://dx.doi.org/10.1063/1.102558 (3 pages) | Cited 31 times

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We report the successful fabrication of a two‐dimensional phase‐locked array of vertical‐cavity surface‐emitting lasers. The array was comprised of more than 160 vertical‐cavity surface‐emitting lasers of 1.3 μm diameter with a separation of less than 0.1 μm between each lasing element. The array had a 25 μm diameter and each of the elemental lasers was located on a two‐dimensional rectangular lattice. The threshold current of the two‐dimensional array 45 mA yields a threshold current of 280 μA for an elemental laser. The far‐field beam angle of the array was as narrow as 7°, and the spectral purity was found to be good enough to allow for a clear holographic image reconstruction of a holographic memory.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
81.65.-b Surface treatments

Large‐ and small‐signal gain characteristics of 1.5 μm multiple quantum well optical amplifiers

G. Eisenstein, U. Koren, G. Raybon, T. L. Koch, J. M. Wiesenfeld, M. Wegener, R. S. Tucker, and B. I. Miller

Appl. Phys. Lett. 56, 1201 (1990); http://dx.doi.org/10.1063/1.102559 (3 pages) | Cited 14 times

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We report large‐ and small‐signal gain characteristics of 1.5 μm multiple quantum well optical amplifiers. We demonstrate a 350‐μm‐long amplifier with a peak gain of 15 dB. At a wavelength where the small‐signal gain is 13.5 dB, the 3 dB saturation output power is as large as 45 mW. The 3 dB saturation output energy is 5.1 pJ and the calculated gain recovery time is 57 ps. We also demonstrate a 625‐μm‐long device with a gain of 19 dB and a saturation output power of 42 mW.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
63.10.+a General theory
78.66.-w Optical properties of specific thin films
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures

Optical waveguiding and nonlinear optics in high quality 2‐docosylamino‐5‐nitropyridine Langmuir–Blodgett films

Ch. Bosshard, M. Küpfer, P. Günter, C. Pasquier, S. Zahir, and M. Seifert

Appl. Phys. Lett. 56, 1204 (1990); http://dx.doi.org/10.1063/1.102560 (3 pages) | Cited 23 times

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The linear and nonlinear optical properties of well‐ordered Y‐type Langmuir–Blodgett (LB) multilayers of 2‐docosylamino‐5‐nitropyridine (DCANP) have been investigated. The nonlinear optical susceptibilities have been determined for the wavelengths λ=1064 nm [d33=(7.8±1) pm/V, d31=(2.0±0.5) pm/V] and λ=1318 nm [d33=(5.6±1) pm/V]. In first waveguiding experiments carried out TE0 and TM0 modes propagating over more than 20 mm could be excited. Coupling experiments allowed the determination of the dispersion of the refractive index n3 (n632.8 nm3 =1.598). Guided wave attenuation coefficients as low as 12 dB/cm (at the wavelength λ=632.8 nm) are reported.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.-a Optical materials
42.79.Gn Optical waveguides and couplers

HgCdTe on GaAs/Si for mid‐wavelength infrared focal plane arrays

Ken Zanio, Ross Bean, Reed Mattson, Paul Vu, Scott Taylor, Dave McIntyre, Chris Ito, and Muren Chu

Appl. Phys. Lett. 56, 1207 (1990); http://dx.doi.org/10.1063/1.102561 (3 pages) | Cited 9 times

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Mid‐wavelength HgCdTe was grown by metalorganic chemical vapor deposition at 390 °C on CdTe/GaAs/Si substrates. Resistance‐area products as high as 107 Ω cm2 were measured for 320×5 arrays of detectors having a λco of 4.6 μm at 77 K. Rudimentary thermal imaging was demonstrated for 1×32 hybrid HgCdTe/Si arrays having a λco of 2.8 μm. Temperature cycling of these arrays between room temperature and 77 K caused no significant degradation of the resistance‐area products of the HgCdTe detectors.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.40.Tv Optical and dielectric properties related to treatment conditions

Strained InGaAs/InP quantum well lasers

H. Temkin, T. Tanbun‐Ek, and R. A. Logan

Appl. Phys. Lett. 56, 1210 (1990); http://dx.doi.org/10.1063/1.102562 (3 pages) | Cited 30 times

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Quantum well lasers based on strained InxGa1−xAs/InP were grown by atmospheric pressure metalorganic vapor phase epitaxy. Buried‐heterostructure lasers with the active layer consisting of three quantum wells, each ∼50 Å thick, placed in a continuously graded waveguide, exhibit threshold currents as low as 15 mA, high quantum efficiency (24%), and power output (∼100 mW), independent of composition. Changing the In concentration from x=0.48 to 0.62 results in the lasing wavelength shift from 1.45 to 1.62 μm. These wavelengths are in excellent agreement with the calculated energies of the electron–heavy hole exciton transition.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Demonstration of all‐optical phase modulation in polydiacetylene waveguides

M. Thakur and D. M. Krol

Appl. Phys. Lett. 56, 1213 (1990); http://dx.doi.org/10.1063/1.102563 (3 pages) | Cited 20 times

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We present the first demonstration of all‐optical phase modulation in the waveguides of an organic material {poly[bis‐(p‐toluene sulfonate) of 2, 4‐hexadiyne‐1, 6‐diol]}. The phase change as a function of optical intensity has been measured via the Mach–Zehnder interferometric method. A π phase shift has been observed for a 2‐mm‐long waveguide as the peak intensity is increased by ∼7 MW/cm2 for polarization parallel to the chain axis (λ=1.06 μm). Through detailed polarization‐selective measurements we have established that the observed phase change is electronic (nonthermal) in origin. The results are highly encouraging in terms of all‐optical device applications of the material.
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42.70.-a Optical materials
42.79.Gn Optical waveguides and couplers
78.20.-e Optical properties of bulk materials and thin films

Kinetics of HgX (B‐X) formation due to collisions of Ar+2 ions with CH3HgX (X=Cl, Br, I) molecules related to blue‐green laser emission

M. F. Mahmood

Appl. Phys. Lett. 56, 1216 (1990); http://dx.doi.org/10.1063/1.102519 (3 pages)

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Collisional behavior of HgX (B state) (X=Cl, Br, I) has been studied during collisions of Ar+2 ions with CH3HgX (X=Cl, Br, I) molecules in the kinetic energy (lab.) range 100–1000 eV. By using the integrated intensity of the most intense band of the (B, v′=0−X, v″=22) transitions in HgCl, HgBr, and HgI at 558, 502, and 443 nm, respectively, emission cross sections were measured at various kinetic energies of the projectile ions. The maximum values of these cross sections for dissociative excitation were found to be 3.8×10−19, 5.7×10−19, and 6.1×10−19 cm2 for HgCl (B), HgBr (B), and HgI (B), respectively.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems
52.20.Hv Atomic, molecular, ion, and heavy-particle collisions
82.30.Fi Ion-molecule, ion-ion, and charge-transfer reactions

GaInAsP/InP buried‐heterostructure surface‐emitting diode laser with monolithic integrated bifocal microlens

Z. L. Liau, J. N. Walpole, L. J. Missaggia, and D. E. Mull

Appl. Phys. Lett. 56, 1219 (1990); http://dx.doi.org/10.1063/1.102520 (3 pages) | Cited 9 times

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A new surface‐emitting diode laser has been demonstrated, which consists of a buried‐heterostructure waveguide gain region on one side of the substrate and a bifocal microlens of 210 μm diameter on the other side. The bifocal microlens is composed of a collimating lens in the center (70 μm diameter) and a spherical mirror in the surrounding region, for output collimation and optical feedback, respectively. Accurate alignment between the gain region and the microlens has been obtained by using the focused light spot produced by the latter. Initial device results show room‐temperature pulsed threshold currents around 92 mA (with a low of 70 mA) and far‐field patterns with a narrow central lobe of 1.25°.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Mv Dye lasers
42.15.Eq Optical system design
42.79.Bh Lenses, prisms and mirrors
68.35.Md Surface thermodynamics, surface energies

InGaAs/InP graded‐index quantum well lasers with nearly ideal static characteristics

H. Temkin, T. Tanbun‐Ek, R. A. Logan, J. A. Lewis, and N. K. Dutta

Appl. Phys. Lett. 56, 1222 (1990); http://dx.doi.org/10.1063/1.102521 (3 pages) | Cited 7 times

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We have examined static properties of step and continuously graded single and multiple quantum well InGaAs/InP lasers grown by atmospheric pressure metalorganic vapor phase epitaxy. Systematic changes in the band gap of InGaAsP waveguide layers have resulted in lasers with low threshold current (<10 mA), high quantum efficiency (26% per facet) and power output (∼70 mW), and the effective loss of 2–5 cm−1. We show that the changes in threshold current in short lasers can be explained by a switch from the n=1 to n=2 level. The level switching results in a very flat and wide (>1000 Å) gain profile.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Rz Doped-insulator lasers and other solid state lasers

Structure of (√3×√3) R 30°‐B at the Si interface studied by grazing incidence x‐ray diffraction

Koichi Akimoto, Ichiro Hirosawa, Toru Tatsumi, Hiroyuki Hirayama, Jun’ichiro Mizuki, and Junji Matsui

Appl. Phys. Lett. 56, 1225 (1990); http://dx.doi.org/10.1063/1.102522 (3 pages) | Cited 14 times

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The boron‐induced ( 7/8 × 7/8 )R30° reconstruction at the Si interface has been investigated by grazing incidence x‐ray diffraction. The in‐plane projected struture is found from the structure factors near zero perpendicular momentum transfer. At the a‐Si/Si (111) interface, boron atoms at 1/3 ML are substituted for silicon atoms, thus forming a ( 7/8 × 7/8 )R30° lattice and the boronsilicon bond is contracted compared with the siliconsilicon bond. Even at the interface between a solid phase epitaxial Si (111) layer and a Si (111) substrate, the boron‐induced ( 7/8 × 7/8 )R30° reconstruction has also been observed and the structure is similar to that observed at the a‐Si/Si (111) interface.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
81.15.Np Solid phase epitaxy; growth from solid phases
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
61.05.C- X-ray diffraction and scattering

Structure at polymer interfaces determined by high‐resolution nuclear reaction analysis

U. K. Chaturvedi, U. Steiner, O. Zak, G. Krausch, G. Schatz, and J. Klein

Appl. Phys. Lett. 56, 1228 (1990); http://dx.doi.org/10.1063/1.103332 (3 pages) | Cited 31 times

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We describe a method based on nuclear reaction analysis, using the reaction 2H(3He, 4He)1H, (Q=18.352 MeV) to determine composition profiles of deuterated polymer chains in thin films. By detecting the emitted α particles (4He) at forward angles (30°) we are able to achieve a spatial resolution of 7 nm half width at half maximum (HWHM) at the deuterated sample surface, and 15 nm HWHM at a depth of some 130 nm. We use our method to probe initial diffusional broadening at the interface between deuterated and protonated polystyrene films. Our measured profiles are in close agreement with earlier measurements (over larger spatial scales) and with mean field models for the diffusional process in this system.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
68.55.Nq Composition and phase identification
68.37.Vj Field emission and field-ion microscopy
82.80.Jp Activation analysis and other radiochemical methods

Eliminating channeling tail by lower dose preimplantation

Masataka Kase, Mami Kimura, Haruhisa Mori, and Tsutomu Ogawa

Appl. Phys. Lett. 56, 1231 (1990); http://dx.doi.org/10.1063/1.102523 (2 pages) | Cited 9 times

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We optimized Ge+ and Si+ preimplantation to eliminate the channeling tail and prevent the rapid diffusion of boron and the formation of serious defects. We examined the dependence of the microchanneling of BF+2 implantation or the lattice disorder of preimplanted silicon using secondary‐ion mass spectroscopy and grazing exit Rutherford backscattering spectroscopy. The optimum doses are about 25% those for full amorphization, i.e., preamorphization. The channeling tail is eliminated by disordered layers containing about 60% silicon atoms on irregular sites.
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61.72.uf Ge and Si
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
61.80.Jh Ion radiation effects
61.85.+p Channeling phenomena (blocking, energy loss, etc.)

Nature of the band gap (direct versus indirect) of short‐period (GaAs)n/(AlAs)n superlattices grown along the [111] confinement direction

R. Cingolani, L. Tapfer, and K. Ploog

Appl. Phys. Lett. 56, 1233 (1990); http://dx.doi.org/10.1063/1.103333 (3 pages) | Cited 5 times

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We report on spectroscopic experimental evidence of type II band alignment in a (GaAs)6/(AlAs)6 superlattice grown by molecular beam epitaxy along the (111) direction. This result is in contrast to recent theoretical calculations predicting that the (GaAs)n/(AlAs)n superlattices grown along the (111) direction should be direct for all n’s.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.55.Cr III-V semiconductors

Channeling scanning transmission ion microscopy

M. Cholewa, G. Bench, G. J. F. Legge, and A. Saint

Appl. Phys. Lett. 56, 1236 (1990); http://dx.doi.org/10.1063/1.102524 (3 pages) | Cited 1 time

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Scanning transmission ion microscopy (STIM) has been used, in conjunction with channeling, to explore transmission channeling in 50‐μm‐thick epitaxially grown n‐type silicon with 3.9 MeV H+ beam currents of 0.1 fA focused to spot sizes of less than 200 nm. The technique is extremely efficient, causes negligible damage, and is capable of very high resolution. High‐resolution images of crystal damage were obtained with this first demonstration of channeling contrast in STIM.
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07.78.+s Electron, positron, and ion microscopes; electron diffractometers
61.80.Jh Ion radiation effects
61.85.+p Channeling phenomena (blocking, energy loss, etc.)

Optical phonon‐assisted tunneling in double quantum well structures

D. Y. Oberli, Jagdeep Shah, T. C. Damen, J. M. Kuo, J. E. Henry, Jenifer Lary, and Stephen M. Goodnick

Appl. Phys. Lett. 56, 1239 (1990); http://dx.doi.org/10.1063/1.102525 (3 pages) | Cited 56 times

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Using subpicosecond time‐resolved luminescence spectroscopy, we show that the tunneling rate for electrons in an asymmetric double quantum well structure changes dramatically as the energy separation between the two lowest conduction subbands of the coupled well system is tuned through the optical phonon energy. We model these experiments using an ensemble Monte Carlo simulation and obtain a good quantitative agreement between the two. These results demonstrate the importance of phonon‐assisted tunneling processes and raise a number of interesting questions concerning the nature of phonons and carrier‐phonon interactions in these structures.
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73.40.Gk Tunneling
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Molecular beam epitaxy of AlAs0.16Sb0.84 and Al0.8Ga0.2As0.14Sb0.86 on InAs substrates

J. A. Lott, L. R. Dawson, E. D. Jones, and J. F. Klem

Appl. Phys. Lett. 56, 1242 (1990); http://dx.doi.org/10.1063/1.102526 (3 pages) | Cited 11 times

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Epitaxial films of AlAs0.16Sb0.84 and Al0.8Ga0.2As0.14Sb0.86 were grown lattice matched on (100) InAs substrates by molecular beam epitaxy. The material was characterized by x‐ray diffraction, 4 K photoluminescence, and capacitance‐voltage measurement techniques. At 300 K, background acceptor concentrations of 1.8×1015 and 1.4×1016 cm−3 were determined for the unintentionally doped AlAsSb and AlGaAsSb epitaxial layers, respectively. Compensating the AlAsSb and AlGaAsSb epitaxial layers with sulfur doping resulted in high‐resistivity material with an effective donor concentration of about 1014 and 1015 cm−3, respectively.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.40.Ty Semiconductor-insulator-semiconductor structures
85.30.Hi Surface barrier, boundary, and point contact devices

Entropy measurements on slow Si/SiO2 interface states

D. H. Cobden, M. J. Uren, and M. J. Kirton

Appl. Phys. Lett. 56, 1245 (1990); http://dx.doi.org/10.1063/1.102527 (3 pages) | Cited 6 times

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Using telegraph noise measurements on small n‐ and p‐channel metal‐oxide‐silicon field‐effect transistors, we have measured the entropy change associated with the change of the charge state of individual slow Si/SiO2 surface states. In n‐channel devices we find that the entropy change is positive on electron emission to the silicon conduction band, while in p‐channel devices it is positive on hole emission to the valence band. The results suggest that the slow states in the upper and lower regions of the silicon band gap are of a different type.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.25.+i Surface conductivity and carrier phenomena

Heavy carbon doping in metalorganic chemical vapor deposition for GaAs using a low V/III ratio

Mitsuhiro Kushibe, Kazuhiro Eguchi, Masahisa Funamizu, and Yasuo Ohba

Appl. Phys. Lett. 56, 1248 (1990); http://dx.doi.org/10.1063/1.103181 (3 pages) | Cited 14 times

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Heavily carbon‐doped GaAs was obtained by low‐pressure metalorganic chemical vapor deposition by using trimethylgallium and arsine with a low V/III ratio. The hole concentration became as high as 2×1019 cm−3 without using intentional doping source gases when the V/III ratio was decreased to 2.4. The hole concentration coincided with the carbon concentration measured by secondary‐ion mass spectroscopy. The epilayer surface tended to be rough when the V/III ratio was decreased below 10. However, when the V/III ratio was lowered to 2.4, the epilayer surface became completely mirror‐like.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
61.72.U- Doping and impurity implantation
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients

Redistribution of Zn in GaAs‐AlGaAs heterojunction bipolar transistor structures

W. S. Hobson, S. J. Pearton, and A. S. Jordan

Appl. Phys. Lett. 56, 1251 (1990); http://dx.doi.org/10.1063/1.102528 (3 pages) | Cited 20 times

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The redistribution of Zn in the base region of GaAs‐AlGaAs heterojunction bipolar transistor structures during growth by organometallic vapor phase epitaxy has been examined with respect to the presence of Si doping in the emitter‐contact, emitter, and collector/subcollector layers, and as a function of Zn doping concentration and Si counterdoping level in the p+ base. For a growth temperature of 675 °C the Zn shows no significant redistribution up to concentrations of 3×1019 cm−3 without Si doping. The addition of Si to the adjacent AlGaAs emitter and collector/subcollector layers causes substantial diffusion of Zn from the base, while Si doping of the GaAs emitter contact results in even greater Zn redistribution. Under these conditions, the Zn concentration in the base attains a maximum value of ∼7×1018 cm−3. Silicon counterdoping in the base region retards the Zn diffusion, while strain introduced by an InGaAs cap layer has no effect on the Zn redistribution.
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85.30.Pq Bipolar transistors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Extended defect evolution in boron‐implanted Si during rapid thermal annealing and its effects on the anomalous boron diffusion

Y. M. Kim, G. Q. Lo, D. L. Kwong, A. F. Tasch, and S. Novak

Appl. Phys. Lett. 56, 1254 (1990); http://dx.doi.org/10.1063/1.102529 (3 pages) | Cited 14 times

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Effects of extended defect evolution on the anomalous diffusion of ion‐implanted boron during rapid thermal annealing (RTA) have been studied using transmission electron microscopy and secondary‐ion mass spectroscopy. It has been found that for low‐dose boron implants (<1×1014 cm−2), no extended defects can be observed after RTA at 1000 °C, and the anomalous diffusion saturates within less than 10 s. However, extended defects are developed for high‐dose boron implants (>5×1014 cm−2), and the anomalous diffusion persists for a much longer time and is dose dependent. Extended defect evolution has been characterized and correlated with the observed anomalous boron diffusion behaviors.
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61.72.uf Ge and Si
61.72.Yx Interaction between different crystal defects; gettering effect
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
66.30.J- Diffusion of impurities

Photoluminescence characteristics of AlGaN‐GaN‐AlGaN quantum wells

M. A. Khan, R. A. Skogman, J. M. Van Hove, S. Krishnankutty, and R. M. Kolbas

Appl. Phys. Lett. 56, 1257 (1990); http://dx.doi.org/10.1063/1.102530 (3 pages) | Cited 64 times

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AlxGa1−xN‐GaN quantum wells were grown on basal plane sapphire by low‐pressure metalorganic vapor deposition. The photoluminescence spectra of samples of different well thicknesses and x values were measured. The experimental data were compared with the calculated solutions of the finite square quantum well and the bound states involved in the optical transition were identified.
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73.61.Ey III-V semiconductors
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.55.Hx Other solid inorganic materials
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Electrical and structural properties of Si/CrSi2/Si heterostructures fabricated using ion implantation

Alice E. White, K. T. Short, and D. J. Eaglesham

Appl. Phys. Lett. 56, 1260 (1990); http://dx.doi.org/10.1063/1.103334 (3 pages) | Cited 23 times

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Using high dose implantation of Cr+ into (111)‐oriented Si, followed by annealing, we have created continuous, buried layers of CrSi2 in Si. The layers are stoichiometric and epitaxially aligned along one of the substrate 〈111〉 directions. Results of temperature‐dependent resistivity and Hall measurements on the early layers show that they are p‐type degenerate semiconductors consistent with data for bulk samples. More recent layers appear to be single crystal with [0001] parallel to [111] and are n type with lower carrier density.
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73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
61.72.uf Ge and Si
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Carbon implantation in InGaAs and AlInAs

S. J. Pearton, W. S. Hobson, A. P. Kinsella, J. Kovalchick, U. K. Chakrabarti, and C. R. Abernathy

Appl. Phys. Lett. 56, 1263 (1990); http://dx.doi.org/10.1063/1.102531 (3 pages) | Cited 7 times

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It is shown for the first time that carbon behaves predominantly as an acceptor in InGaAs and AlInAs under co‐implantation conditions. The co‐implanted ion, regardless of species, acts to create vacant lattice sites for occupation by the carbon. Implantation of 40 keV carbon ions alone at doses between 5×1012 and 5×1014 cm−2 followed by annealing in the range 600–950 °C for 10 s does not produce any measurable electrical activity in either material. In InGaAs, carbon implantation at 5×1014 cm−2 produced net acceptor activations of 20, 11, or 6% for Ga, Ar, or As co‐implantation, respectively, at the same doses after 700 °C, 10 s anneals. Similar results were obtained for AlInAs after annealing at 900 °C. The diffusion coefficient for carbon is estimated from secondary‐ion mass spectrometry measurements to be less than 3.3×10−14 cm2  s−1 at 800 °C in both materials.
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61.72.U- Doping and impurity implantation
61.72.Bb Theories and models of crystal defects
66.30.J- Diffusion of impurities
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Deep level photoluminescence spectroscopy of CdTe epitaxial layer surfaces

J. L. Shaw, L. J. Brillson, S. Sivananthan, and J. P. Faurie

Appl. Phys. Lett. 56, 1266 (1990); http://dx.doi.org/10.1063/1.102532 (3 pages) | Cited 10 times

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We have used deep level photoluminescence spectroscopy to investigate the surface electronic quality of molecular beam epitaxy (MBE) grown CdTe layers during ultrahigh vacuum cleaning. Spectra are highly sensitive to heat treatment, contamination, and electron beam exposure. The technique provides a guide to growth and cleaning of MBE films of optimal electronic quality, which exhibit intense near‐band‐edge and minimal deep level emission and which exceed substantially the electronic quality of bulk CdTe crystals.
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73.20.At Surface states, band structure, electron density of states
78.55.Cr III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
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