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2 Apr 1990

Volume 56, Issue 14, pp. 1299-1382

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AlGaAs grating surface‐emitting beam deflector utilizing carrier‐induced refractive index change

Kiyoshi Tone, Hisao Nagata, and Ken Yamashita

Appl. Phys. Lett. 56, 1299 (1990); http://dx.doi.org/10.1063/1.102539 (3 pages) | Cited 1 time

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A new type of AlGaAs grating surface‐emitting beam deflector is proposed. The deflection is controlled by a carrier‐induced refractive index change of the waveguide on which the grating output coupler is fabricated. About 0.6° of the maximum deflection angle is obtained at the injection current of 1.6 A. This corresponds to about 12 resolvable spots.
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42.79.Fm Reflectors, beam splitters, and deflectors
42.79.Ls Scanners, image intensifiers, and image converters
85.60.-q Optoelectronic devices
42.79.Gn Optical waveguides and couplers
42.55.Mv Dye lasers

45° waveguide isolators with phase mismatch

H. Dammann, E. Pross, G. Rabe, and W. Tolksdorf

Appl. Phys. Lett. 56, 1302 (1990); http://dx.doi.org/10.1063/1.102501 (3 pages) | Cited 18 times

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45° waveguide isolators based on magneto‐optic channel waveguides with phase mismatch can be realized simply by choosing a proper orientation of the input polarization. This is demonstrated theoretically by visualizing the magneto‐optic mode coupling as ‘‘coupling tracks’’ on the Poincaré sphere, and is verified experimentally for real waveguides with considerable phase mismatch. More than 30 dB isolation is feasible in practical devices.
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42.79.Gn Optical waveguides and couplers
42.25.Ja Polarization

Role of two‐photon absorption in ultrafast semiconductor optical switching devices

J. S. Aitchison, M. K. Oliver, E. Kapon, E. Colas, and P. W. E. Smith

Appl. Phys. Lett. 56, 1305 (1990); http://dx.doi.org/10.1063/1.102502 (3 pages) | Cited 24 times

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We report measurements of the two‐photon absorption coefficient of GaAs optical waveguide structures at 1.06 μm. We show that for pulse lengths longer than ∼1 ps, light‐induced index changes sufficient to induce all‐optical switching will be predominantly due to carriers generated by two‐photon absorption. These results allow us to predict limitations for ultrafast all‐optical GaAs devices.
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42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.50.Ar Photon statistics and coherence theory
85.60.Jb Light-emitting devices

Double‐heterostructure optoelectronic switch as a single quantum well laser

G. W. Taylor and P. Cooke

Appl. Phys. Lett. 56, 1308 (1990); http://dx.doi.org/10.1063/1.102503 (3 pages) | Cited 6 times

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The double‐heterostructure optoelectronic switch (DOES) is demonstrated as an N‐channel, single quantum well, graded index laser. As a broad‐area device, the DOES exhibits excellent electrical switching characteristics of 12 V and 0.04 A cm−2 at the switching condition and 1.8 V and 3.3 A cm−2 at the holding condition with 8.4×10−4 Ω cm2 on state resistance. As a laser, threshold current densities down to 580 A/cm2, loss of 11 cm−1, slope efficiency of 0.35 mA/mW, and total power conversion efficiency of 45% were obtained.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.By Design of specific laser systems
42.65.Pc Optical bistability, multistability, and switching, including local field effects

Etching of SiO2 in an electron cyclotron resonance argon plasma

S. Salimian, C. B. Cooper, and A. Ellingboe

Appl. Phys. Lett. 56, 1311 (1990); http://dx.doi.org/10.1063/1.103198 (3 pages) | Cited 8 times

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Etching of SiO2 with low‐energy Ar ions has been studied in an electron cyclotron resonance (ECR) based etching system. Ion energies were controlled by a capacitively coupled 13.56 MHz bias of the substrate. Etch rates of over 100 Å/min have been achieved at ion energies below 100 V. The variation in etch rate has been studied as a function of ECR power, self‐induced bias, and position of the wafer relative to the ECR source. This low‐energy process can be utilized for cleaning of semiconductor surfaces prior to chemical vapor deposition or metallization processes.
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81.65.-b Surface treatments
52.80.Pi High-frequency and RF discharges
85.40.Hp Lithography, masks and pattern transfer

Control of internal stress and Young’s modulus of Si3N4 and polycrystalline silicon thin films using the ion implantation technique

Osamu Tabata, Susumu Sugiyama, and Mitsuharu Takigawa

Appl. Phys. Lett. 56, 1314 (1990); http://dx.doi.org/10.1063/1.103199 (3 pages)

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Boron and phosphorus ions are implanted in order to control the internal stress and Young’s modulus of 200‐nm‐thick silicon nitride and polycrystalline silicon films prepared by low‐pressure chemical vapor deposition. These ions are implanted into the middle layer of the films at doses of 1×1014 and 1×1015/cm2, then the films are annealed at 900 °C. The internal stress and Young’s modulus of these films are measured by a rectangular membrane load deflection technique [Tech. Digest, IEEE Micro Electromechanical Systems Workshop, IEEE, Salt Lake City, UT, 1989, p. 152]. Both internal stress and Young’s modulus of the silicon nitride film decrease with dose, while those of the polycrystalline silicon film do not necessarily decrease.
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61.72.uf Ge and Si
62.20.D- Elasticity
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Direct observation of glide dislocations in a KCl crystal by the light scattering method

T. Kataoka, H. Ohji, K. Kishida, K. Azuma, and T. Yamada

Appl. Phys. Lett. 56, 1317 (1990); http://dx.doi.org/10.1063/1.102504 (3 pages) | Cited 3 times

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The edge‐like dislocations in a KCl single crystal produced by plastic deformation have been observed successfully by a 90° angle light scattering method using a scanning type microscope constructed with a high‐power Ar‐ion laser (2 W for a wavelength of 514 nm) and a conventional optical microscope. The image of glide dislocations was very sharp and uniform compared with that of grown‐in dislocations. The orientation dependence of light scattering agreed with Moriya–Ogawa’s theory [Philos. Mag. A 41, 191 (1980)].
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61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.79.Ls Scanners, image intensifiers, and image converters
42.79.Pw Imaging detectors and sensors
07.60.Pb Conventional optical microscopes

Surface‐enhanced Raman spectroscopy of chemical vapor deposited diamond films

Diane S. Knight, Ronald Weimer, Lawrence Pilione, and William B. White

Appl. Phys. Lett. 56, 1320 (1990); http://dx.doi.org/10.1063/1.102505 (3 pages) | Cited 36 times

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By using surface‐enhanced Raman spectroscopy it was possible to clearly identify very thin diamond and amorphous carbon coatings which were not detectable by normal Raman spectroscopy. A very small amount of silver was sputtered onto the surface of thin diamond depositions. Raman spectra measured through the silver layer exhibited the 1332 cm−1 diamond line and broadbands due to other forms of carbon. Raman scattering measured through silver coatings directly on the silicon substrate revealed extremely thin layers of amorphous carbon.
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78.30.Hv Other nonmetallic inorganics
78.30.Fs III-V and II-VI semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Microstructure of epitactically grown GaAs/ErAs/GaAs

Jane G. Zhu, C. Barry Carter, Chris J. Palmstrøm, and Suzanne Mounier

Appl. Phys. Lett. 56, 1323 (1990); http://dx.doi.org/10.1063/1.102506 (3 pages) | Cited 16 times

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A series of GaAs/ErAs/GaAs epilayer heterostructures has been grown on (100)GaAs substrates by molecular beam epitaxy and characterized by high‐resolution transmission electron microscopy and Rutherford backscattering measurements. Good epitaxy of the ErAs on the GaAs is demonstrated. The top GaAs layer is usually epitactically aligned with ErAs/GaAs in most areas; however, growth of (111)GaAs on (100)ErAs has also been observed. Small grains are present in the top GaAs layer which are twinned on {111} with respect to epitactic grains. These give rise to GaAs {122}/ErAs(100) phase boundaries. The {122} oriented GaAs grains do not continue throughout the GaAs growth but are overgrown by the neighboring epitactic grains.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
61.72.Mm Grain and twin boundaries
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Effect of alignment layer conductivity on the bistability of surface‐stabilized ferroelectric liquid‐crystal devices

T. C. Chieu and K. H. Yang

Appl. Phys. Lett. 56, 1326 (1990); http://dx.doi.org/10.1063/1.102507 (3 pages) | Cited 14 times

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Recent experimental results indicate that bistability is difficult to achieve in surface‐stabilized ferroelectric liquid‐crystal devices with high spontaneous polarization (Ps) materials. We formulated the basic equations to analyze the bistability as a function of the conductivity and thickness of the alignment layers using Ps as a parameter. It is found that a threshold value of the conductivity, which approximately scales with both the thickness and Ps, exists to achieve good bistability. Numerical results are given to provide important guidances for choosing the alignment layer materials to obtain excellent bistability using high Ps materials.
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61.30.Eb Experimental determinations of smectic, nematic, cholesteric, and other structures
78.20.Jq Electro-optical effects

Neutral electron trap generation in SiO2 by hot holes

Shigeo Ogawa, Noboru Shiono, and Masakazu Shimaya

Appl. Phys. Lett. 56, 1329 (1990); http://dx.doi.org/10.1063/1.103200 (3 pages) | Cited 18 times

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Experimental evidence for neutral electron trap generation in SiO2 caused by injected holes is presented. The neutral electron traps are detected by Fowler–Nordheim (FN) tunneling electron injection after avalanche hole injection. The density of generated neutral traps increases with the number of injected holes, but does not saturate with that of the trapped holes. The centroid of generated neutral traps is found to be in the middle of the oxide. These results suggest that neutral traps are generated by the holes and not only by the recombination of electrons with trapped holes. The origin of neutral traps is considered to be associated with dipolar defects formed by SiO bond breaking under hole transport in the oxide.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.61.Ng Insulators
77.55.-g Dielectric thin films

Epitaxial growth of CeO2 layers on silicon

T. Inoue, Y. Yamamoto, S. Koyama, S. Suzuki, and Y. Ueda

Appl. Phys. Lett. 56, 1332 (1990); http://dx.doi.org/10.1063/1.103202 (2 pages) | Cited 122 times

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CeO2 layer was epitaxially grown for the first time on both (111) and (100) silicon substrates by vacuum evaporation. Characterization using Rutherford backscattering and reflection high‐energy electron diffraction proved that a CeO2 layer on (111) Si has considerably good crystalline quality, whereas that on (100)Si contains a large amount of crystallographic defects, especially in the vicinity of the CeO2/Si interface. Auger electron spectroscopy analysis showed a uniform concentration distribution of Ce and O throughout the epitaxial layer.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.35.B- Structure of clean surfaces (and surface reconstruction)
61.85.+p Channeling phenomena (blocking, energy loss, etc.)

Ultrashallow, high doping of boron using molecular layer doping

J. Nishizawa, K. Aoki, and T. Akamine

Appl. Phys. Lett. 56, 1334 (1990); http://dx.doi.org/10.1063/1.103180 (2 pages) | Cited 19 times

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A new doping method named molecular layer doping (MLD) is proposed. MLD is based on surface chemical adsorption of dissolvements from induced dopant gas molecules. Ultrashallow boron‐doped layers are successfully achieved by MLD using B2 H6 gas. The p+ n junction formed by MLD exhibits excellent characteristics, with a reverse bias leakage current of less than 2.5×10−16 A/μm2 at 5 V. MLD is attractive in that it offers high‐density, shallow‐junction, damage‐free, selective doping in a short time.
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61.72.up Other materials
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
68.35.Fx Diffusion; interface formation
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Rapid thermal anneal of hydrogen‐implanted metal‐silicon nitride‐silicon dioxide‐silicon structure

B. S. Panwar and A. B. Bhattacharyya

Appl. Phys. Lett. 56, 1336 (1990); http://dx.doi.org/10.1063/1.103201 (3 pages) | Cited 4 times

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A post‐implant rapid thermal annealing technique is proposed to achieve very low interface trap density (<1010/eV cm2) at the SiO2‐Si interface in a metal‐Si3N4‐SiO2‐Si structure. The constitution of a donor layer induced by implanted hydrogen is explained with the aid of a model that predicts the formation of SiH groups. The proposed model is substantiated by comparing the IR data for furnace and rapid thermal annealed samples.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.S- Impurities in crystals
73.20.At Surface states, band structure, electron density of states
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Directional etching of Si with perfect selectivity to SiO2 using an ultraclean electron cyclotron resonance plasma

Takashi Matsuura, Hiroaki Uetake, Tadahiro Ohmi, Junichi Murota, Koichi Fukuda, Nobuo Mikoshiba, Tadashi Kawashima, and Yoshihiro Yamashita

Appl. Phys. Lett. 56, 1339 (1990); http://dx.doi.org/10.1063/1.103203 (3 pages) | Cited 14 times

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Using a newly developed ultraclean electron cyclotron resonance plasma etcher, Si wafers masked by SiO2 were etched with a chlorine plasma at pressures of 0.6–4.0 mTorr with a microwave power of 300–700 W. Ultraclean processing under a low ion energy condition at high pressures has revealed that there is an induction period during which time there is no SiO2 etching. This is not observed with Si. During the induction period, perfectly selective etching for Si to SiO2 has been achieved. Under this perfectly selective condition, anisotropic tenth micron patterns of polycrystalline silicon have been obtained with little undercut.
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81.65.-b Surface treatments
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Intersubband infrared absorption in GexSi1−x/Si superlattice by photocurrent measurement

R. P. G. Karunasiri, J. S. Park, K. L. Wang, and Li‐Jen Cheng

Appl. Phys. Lett. 56, 1342 (1990); http://dx.doi.org/10.1063/1.102508 (3 pages) | Cited 15 times

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The intersubband infrared absorption of holes in a GexSi1−x /Si superlattice is observed for the first time. In the experiment, the photocurrent is measured as a function of applied bias which is used to inject holes to the minibands of the superlattice. Two peaks in the photocurrent as a function of bias across the device are observed due to intersubband absorption between the ground to the first and the first to the second light hole minibands. The polarization dependence measurement is used to study the nature of the transitions and is in good agreement with the selection rules.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.30.Fs III-V and II-VI semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors

Quantum well superluminescent diode with very wide emission spectrum

T. R. Chen, L. Eng, Y. H. Zhuang, A. Yariv, N. S. Kwong, and P. C. Chen

Appl. Phys. Lett. 56, 1345 (1990); http://dx.doi.org/10.1063/1.102509 (2 pages) | Cited 10 times

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Superluminescent diodes (SLDs) employing single and multiple quantum wells were investigated. The diode structure includes a monolithic window and a gain and absorber section. Spectral widths 2–3 times that of conventional SLDs were demonstrated.
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85.60.Jb Light-emitting devices
42.50.Nn Quantum optical phenomena in absorbing, amplifying, dispersive and conducting media; cooperative phenomena in quantum optical systems
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Blue Stark shift in modulation strained InGaAs/InP quantum wells

D. Gershoni, R. A. Hamm, M. B. Panish, and D. A. Humphrey

Appl. Phys. Lett. 56, 1347 (1990); http://dx.doi.org/10.1063/1.102510 (3 pages) | Cited 4 times

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We show that by a proper design and modulation of the composition of a ternary InGaAs quantum well one can considerably alter the optical properties of the system. We demonstrate a novel InGaAs/InP strained‐layer heterostructure in which a blue Stark shift of the absorption edge of more than 10 meV is achieved. This blue shift, together with a field‐enhanced room‐temperature excitonic effect, has applications to bistable electro‐optic devices.
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71.70.Ej Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Role of substrate threading dislocation density in relaxation of highly strained InGaAs/GaAs quantum well structures

J. F. Klem, W. S. Fu, P. L. Gourley, E. D. Jones, T. M. Brennan, and J. A. Lott

Appl. Phys. Lett. 56, 1350 (1990); http://dx.doi.org/10.1063/1.102511 (3 pages) | Cited 12 times

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Structures with highly strained InGaAs/GaAs single quantum wells have been grown on GaAs substrates with KOH etch pit densities from ∼1000 to ∼45 000 cm−2. These structures were characterized by photoluminescence microscopy and 77 K Hall measurements to determine the extent to which the substrate threading dislocation density affects the misfit dislocation density at the quantum well interfaces. For well thicknesses near or below the Matthews–Blakeslee critical thickness, similar results are obtained for substrates of different dislocation density. However, for metastable structures significantly above the critical thickness, the misfit dislocation density is a sensitive function of the substrate quality.
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61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Growth of improved quality 3C‐SiC films on 6H‐SiC substrates

J. A. Powell, D. J. Larkin, L. G. Matus, W. J. Choyke, J. L. Bradshaw, L. Henderson, M. Yoganathan, J. Yang, and P. Pirouz

Appl. Phys. Lett. 56, 1353 (1990); http://dx.doi.org/10.1063/1.102512 (3 pages) | Cited 29 times

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Previously reported chemical vapor deposition of 3C‐SiC on 6H‐SiC has resulted in films with a high density of double positioning boundaries (DPBs). We have found that growth on as‐grown faces of 6H‐SiC crystals can yield films that are largely free of DPBs. The (111) 3C‐SiC films, up to 12 μm thick, were evaluated by optical and electron microscopy and low‐temperature photoluminescence (LTPL). The LTPL spectra of the films were similar to those of high quality Lely‐grown 3C‐SiC.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
78.55.Hx Other solid inorganic materials
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)

Electroluminescence and high‐field domains in GaAs/AlGaAs superlattices

M. Helm, J. E. Golub, and E. Colas

Appl. Phys. Lett. 56, 1356 (1990); http://dx.doi.org/10.1063/1.102513 (3 pages) | Cited 14 times

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Photoluminescence, electroluminescence, and current measurements are used to probe the internal field in an n+‐n‐n+ GaAs/AlGaAs superlattice. At low bias voltages, the photoluminescence spectrum shows several peaks arising from electric field domains in the superlattice. Their positions correlate with features in the current‐voltage characteristic and are consistent with a simple calculation of the Stark shift. Above the threshold voltage for impact ionization we observe spectrally narrow electroluminescence (width 3.5 meV). The energy of this emission coincides with the zero‐field photoluminescence signal, indicating that electrons and holes screen the applied electric field in the quantum wells.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
78.55.Cr III-V semiconductors
78.60.Fi Electroluminescence
72.20.Ht High-field and nonlinear effects

Evidence for a negative electron‐electron correlation energy in the dominant deep trapping center in silicon nitride films

Sean E. Curry, P. M. Lenahan, D. T. Krick, J. Kanicki, and C. T. Kirk

Appl. Phys. Lett. 56, 1359 (1990); http://dx.doi.org/10.1063/1.102514 (3 pages) | Cited 26 times

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We report results of electron spin resonance and capacitance versus voltage measurements of silicon nitride/silicon dioxide/silicon devices subjected to high electric field carrier injection into the nitride and (in some samples) ultraviolet illumination. Our results strongly indicate that the dominant trapping center in these silicon nitride films has a negative electron‐electron correlation energy.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.20.Hb Impurity and defect levels; energy states of adsorbed species
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Electrical and structural properties of shallow p+ junctions formed by dual (Ga/B) ion implantation

P. Mei, B. Jalali, E. S. Yang, N. G. Stoffel, and D. L. Hart

Appl. Phys. Lett. 56, 1362 (1990); http://dx.doi.org/10.1063/1.102515 (3 pages) | Cited 1 time

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Ultrashallow p+ junctions formed by dual implanation of Ga and B with low‐temperature rapid thermal anneal (RTA) are reported. The electrical and structural properties of the shallow junction were studied by sheet resistance and diode reverse recovery measurements, Rutherford backscattering channeling, and secondary‐ion mass spectrometry. A junction of 400 Å depth (full width at half maximum) and an average carrier concentration of 3×1019 cm−3 were realized with RTA at 600 °C. It is shown that there is excess damage in the dual‐implanted junctions which affects the minority‐carrier lifetime.
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61.72.uf Ge and Si
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.80.Cw Elemental semiconductors
85.30.Kk Junction diodes

Effects of rapid thermal annealing and SiO2 encapsulation on GaInAs/AlInAs heterostructures

S. O’Brien, J. R. Shealy, D. P. Bour, L. Elbaum, and J. Y. Chi

Appl. Phys. Lett. 56, 1365 (1990); http://dx.doi.org/10.1063/1.103204 (3 pages) | Cited 11 times

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Substantial blue shifts in the transition energies of GaInAs/AlInAs single quantum wells were observed due to localized SiO2 capping and rapid thermal annealing at temperatures between 750 and 900 °C. In contrast to previously reported results, regions capped with SiO2 exhibited blue shifts up to 74 meV while regions with no SiO2 showed minimal shifting. With this band‐gap change, a lateral index change of approximately −0.6% is anticipated making this process suitable for index‐guided lasers. Samples also exhibited up to 15‐fold increases in PL efficiencies due to the annealing process. The dependence of energy shifts and PL efficiencies is studied by measuring room‐temperature and low‐temperature photoluminescence.
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81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
81.40.Tv Optical and dielectric properties related to treatment conditions
78.55.Cr III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Can barriers with inverted tunneling rates lead to subband population inversion?

M. Helm and S. J. Allen

Appl. Phys. Lett. 56, 1368 (1990); http://dx.doi.org/10.1063/1.102516 (3 pages) | Cited 13 times

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When the conduction‐band edge of the quantum wells in a superlattice is close to the valence‐band edge of the barriers, the tunneling probabilities out of the quantum well states can be inverted. We examine if this feature can be exploited to achieve intersubband population inversion. If correct matching of the wave function at the interfaces is included, we find that the inversion of the tunneling rates does not persist for low‐energy electrons, relevant for intersubband emission.
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73.40.Gk Tunneling
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
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