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2 Apr 1990

Volume 56, Issue 14, pp. 1299-1382

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In situ low‐temperature deposition and properties of Bi(Pb)‐Sr‐Ca‐Cu‐O thin films prepared by magnetron sputtering

D. Jedamzik, B. R. Barnard, M. R. Harrison, W. G. Freeman, and P. J. Howard

Appl. Phys. Lett. 56, 1371 (1990); http://dx.doi.org/10.1063/1.102517 (3 pages) | Cited 13 times

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Superconducting thin films of the Bi‐Sr‐Ca‐Cu‐O system with and without lead doping were prepared by rf magnetron sputtering onto (100)MgO substrates. Although the superconducting properties of the thin films are very sensitive to the deposition and soak temperatures, reproducible results were obtained. Our in situ deposition process with processing temperatures not exceeding 600 °C yielded films with zero resistance at 82 K and Jc=7×105 A cm2 measured at 4 K for the two‐layer Bi phase. Our initial results with lead‐doped Bi‐Sr‐Ca‐Cu‐O thin films will also be discussed.
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74.70.-b Superconducting materials other than cuprates
74.78.-w Superconducting films and low-dimensional structures

Vapor‐deposited superconducting YBa2Cu3O7−δ lines: Effect of thickness and width on morphology

J. R. Phillips, J. W. Mayer, J. A. Martin, and M. Nastasi

Appl. Phys. Lett. 56, 1374 (1990); http://dx.doi.org/10.1063/1.103205 (3 pages) | Cited 2 times

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Lines of different widths and thicknesses of YBa2Cu3O7−δ were prepared on SrTiO3 and compared for signs of morphological dependence on line dimensions. The lines were prepared on (100) SrTiO3 by electron beam (e‐beam) coevaporation, e‐beam resist lift‐off, and annealing in oxygen to 850 °C. Linewidths ranged from 5 to 0.8 μm, and two film thicknesses, 200 nm (‘‘thin’’) and 500 nm (‘‘thick’’), were prepared. Eddy current measurements showed all samples to be superconducting with transition onset near 95 K. The morphology was found to depend not only on film thickness but also, for finest (≤1 μm) lines, on linewidth. ‘‘Thin’’ lines of all widths showed nearly no a‐type structure, while thick‐film lines showed predominantly a‐type structure on the surface except for the narrowest lines. Narrowest ‘‘thick’’ lines, like ‘‘thin’’ lines, contained mostly c‐type structure. The results for thick fine lines suggest that reduced area growth may offer a practical advantage in achieving c‐type morphology in patterned YBa2Cu3O7−δ for applications.
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74.70.-b Superconducting materials other than cuprates
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
74.78.-w Superconducting films and low-dimensional structures

Preparation of highly coercive Sm‐Fe‐Ti by rapid quenching

M. Katter, J. Wecker, L. Schultz, and R. Grössinger

Appl. Phys. Lett. 56, 1377 (1990); http://dx.doi.org/10.1063/1.102518 (3 pages) | Cited 16 times

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The magnetic properties of the hard magnetic 20:70:10 (ω) phase in melt‐spun Sm20Fe70+xTi10−x (x=−2,0,2) and Sm25Fe65.6Ti9.4 were investigated. The intrinsic coercivity iHc and the magnetization J were measured as a function of both the melt spinning parameters and various heat treatments. The maximum coercivities iHc at room temperature for the compositions Sm20Fe70Ti10 and Sm25Fe65.6Ti9.4 are 44.5 and 58 kOe, respectively. These values are among the highest reported so far for melt‐spun materials. The formation of Sm(Fe,Ti)12 nuclei during rapid solidification is revealed by x‐ray diffraction, and its influence on the formation of the ω phase is discussed. By investigating the section Smx(Fe0.875Ti0.125)100−x of the ternary phase diagram, using differential thermal analysis and x‐ray diffraction, we proved the ω phase to be metastable.
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75.50.Vv High coercivity materials
81.40.Rs Electrical and magnetic properties related to treatment conditions

In situ detection of methyl radicals in laser chemical vapor deposition environment by resonance ionization spectroscopy

Tatsuo Okada, Hiroyuki Andou, Yoshio Moriyama, and Mitsuo Maeda

Appl. Phys. Lett. 56, 1380 (1990); http://dx.doi.org/10.1063/1.102476 (3 pages) | Cited 1 time

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The resonance ionization spectroscopic technique was developed for in situ detection of nonfluorescent radicals in a laser chemical vapor deposition environment. The technique was applied to measure the temporal change of methyl radical densities generated in an Ar and acetone gas mixture by an ArF laser photolysis, and the decrease of radical densities was explained by the self‐recombination reaction.
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82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)
82.50.Bc Processes caused by infrared radiation
82.50.Hp Processes caused by visible and UV light
82.30.-b Specific chemical reactions; reaction mechanisms
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
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