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9 Apr 1990

Volume 56, Issue 15, pp. 1391-1503

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Selectively doped double‐heterojunction lateral current injection ridge waveguide AlGaAs/GaAs laser

N. Yasuhira, I. Suemune, Y. Kan, and M. Yamanishi

Appl. Phys. Lett. 56, 1391 (1990); http://dx.doi.org/10.1063/1.102477 (3 pages) | Cited 2 times

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A new type of laser structure which utilizes the selectively doped double‐heterojunction (SDH) structure for lateral current injection (LCI) was proposed. A ridge waveguide AlGaAs/GaAs laser based on the SDH‐LCI scheme was demonstrated to lase at the very low threshold current of 11.5 mA. The compatibility of this new laser structure with electronic devices is discussed.
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42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes

Role of color center induced absorption in all‐optical switching

K. W. DeLong, Victor Mizrahi, G. I. Stegeman, M. A. Saifi, and M. J. Andrejco

Appl. Phys. Lett. 56, 1394 (1990); http://dx.doi.org/10.1063/1.102478 (3 pages) | Cited 7 times

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We show that color center induced absorption can mimic two‐photon absorption, and may limit all‐optical switching, even for very short pulses. Two‐photon and color center induced absorption are measured in a lead glass fiber.
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42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.81.Dp Propagation, scattering, and losses; solitons
42.50.Lc Quantum fluctuations, quantum noise, and quantum jumps

High‐efficiency DF‐CO2 pulsed chemical laser

T. D. Dreiling and R. L. McGann

Appl. Phys. Lett. 56, 1397 (1990); http://dx.doi.org/10.1063/1.102479 (3 pages)

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The operation of a very efficient, high‐energy DF‐CO2 pulse chemical transfer laser is described. Laser specific energies as high as 21 J/l  were obtained with a wall plug laser electrical efficiency of 130%. Higher laser energy can be obtained with lower efficiencies, e.g., 29 J/l  at 80%. The electrical efficiency obtained herein is the highest reported to date for pulsed chemical lasers.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Ks Chemical lasers
42.55.Lt Gas lasers including excimer and metal-vapor lasers

Mode selection and spatial hole burning suppression of a chirped grating distributed feedback laser

Ping Zhou and G. S. Lee

Appl. Phys. Lett. 56, 1400 (1990); http://dx.doi.org/10.1063/1.102480 (3 pages) | Cited 10 times

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A new kind of distributed feedback (DFB) laser with a linearly chirped grating is proposed and investigated theoretically for the first time. The eigenmodes of the chirped grating DFB (CG‐DFB) and the field intensity distribution are calculated. With a suitable cavity length and chirp factor, the threshold gain difference to the next competence mode can be very large and will keep the single longitudinal mode stable. The chirp factor can be chosen to make the field intensity distribution quite uniform and at the same time keep the threshold gain difference large. This behavior effectively suppresses spatial hole burning and hence makes CG‐DFB lasers that are stable single mode at high power, and with a narrow linewidth.
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42.60.By Design of specific laser systems
42.60.Fc Modulation, tuning, and mode locking
42.55.Mv Dye lasers
42.55.Ah General laser theory

Protective films prepared by the electron cyclotron resonance plasma chemical vapor deposition technique for phase‐change‐type optical disks

Yasuyuki Sugiyama, Susumu Fujimori, Hiroki Yamazaki, and Iwao Hatakeyama

Appl. Phys. Lett. 56, 1403 (1990); http://dx.doi.org/10.1063/1.102481 (3 pages) | Cited 2 times

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Hydrogenated amorphous silicon carbide (a‐SiC:H) films are prepared by the electron cyclotron resonance plasma chemical vapor deposition (ECR PCVD) technique. The films are, for the first time, applied as protective layers for phase‐change‐type optical disks. Three kinds of films with different hydrogen contents are investigated to improve writing sensitivity. The writing laser power required to obtain a sufficient carrier‐to‐noise ratio is 11 mW at a 10 m/s linear velocity, which corresponds to a 30% power reduction compared to conventional rf‐sputtered ZnS protective layers. This is attributed to the decreased thermal conductivity of these protective layers. The hydrogen in the films is confirmed to be thermally stable.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.66.Sq Composite materials

Measurement of the nonlinear refractive index of single‐crystal polydiacetylene channel waveguides

D. M. Krol and M. Thakur

Appl. Phys. Lett. 56, 1406 (1990); http://dx.doi.org/10.1063/1.102482 (3 pages) | Cited 15 times

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We have measured the nonlinear refractive index (n2) of single crystalline poly(bis(p‐toluene sulfonate) of 2,4‐hexadiyn‐1,6‐diol) (PTS) polydiacetylene channel waveguides at 1.06 μm using two different techniques. The first method employs a Mach–Zehnder interferometer to determine the intensity‐induced phase shift in the waveguide. In the second case n2 is derived from the intensity‐dependent birefringence, which is measured with a Babinet–Soleil compensator. With both measurements the value of n2 in the direction of the PTS polymer chain axis is found to be ∼3×10−11 cm2/W. Such a large value of n2 would allow all‐optical device applications of this material at low‐power levels.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.66.Qn Polymers; organic compounds
78.20.Fm Birefringence
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Single quantum well laser with vertically integrated passive waveguides

Y. C. Chen, R. G. Waters, and R. J. Dalby

Appl. Phys. Lett. 56, 1409 (1990); http://dx.doi.org/10.1063/1.102483 (3 pages) | Cited 8 times

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The condition for the fundamental mode operation in a single quantum well laser with vertically integrated passive waveguides has been studied. With proper choice of parameters, transverse beam divergence as low as 19° has been achieved.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.60.By Design of specific laser systems

Minimum fluence for laser blow‐off of thin gold films at 248 and 532 nm

Robert J. Baseman, Nan M. Froberg, Joseph C. Andreshak, and Zack Schlesinger

Appl. Phys. Lett. 56, 1412 (1990); http://dx.doi.org/10.1063/1.102484 (3 pages) | Cited 12 times

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The minimum 248 nm, 25 ns, and 532 nm, 15 ns laser fluences required to blow off thin gold films from optical quartz have been measured as a function of film thickness. The films apparently blow off when the gold‐quartz interface reaches the normal boiling point of gold. Even though the initial reflectivities at the two wavelengths are very different, the actual laser fluences required to blow off the films are very similar. While the reflectivities above the melting point appear to be very low, as expected, large decreases in the reflectivity at 532 nm may also occur prior to film melting.
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61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.66.Bz Metals and metallic alloys
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Active mode locking of lasers by piezoelectrically induced diffraction modulation

F. Krausz, L. Turi, Cs. Kuti, and A. J. Schmidt

Appl. Phys. Lett. 56, 1415 (1990); http://dx.doi.org/10.1063/1.102485 (3 pages) | Cited 5 times

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A new amplitude‐modulation mode‐locking technique is presented. Acoustic waves are generated directly on the faces of a resonant photoelastic medium. The created standing waves cause a highly efficient diffraction modulation of light. The modulation depth of standing‐wave mode lockers is related to material and drive parameters and a figure of merit is introduced. With a lithium niobate crystal modulation depths over 10 are achieved at 1.054 μm and 1 W of radio frequency power. Using this device for the active mode locking of a continuous‐wave Nd:glass laser pulses as short as 3.8 ps are produced at a repetition rate of 66 MHz. Limitations of amplitude‐modulation mode locking by standing acoustic waves are discussed.
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42.60.Fc Modulation, tuning, and mode locking
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects

Growth and characterization of InAs/Ga1−xInxSb strained‐layer superlattices

D. H. Chow, R. H. Miles, J. R. Söderström, and T. C. McGill

Appl. Phys. Lett. 56, 1418 (1990); http://dx.doi.org/10.1063/1.102486 (3 pages) | Cited 51 times

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We report the successful growth of InAs/Ga1−xInxSb strained‐layer superlattices, which have been proposed for far‐infrared applications. The samples were grown by molecular beam epitaxy, and characterized by reflection high‐energy electron diffraction, x‐ray diffraction, and photoluminescence. Best structural quality is achieved for superlattices grown on thick, strain‐relaxed, GaSb buffer layers on GaAs substrates at fairly low substrate temperatures (<400 °C). Photoluminescence measurements indicate that the energy gaps of the strained‐layer superlattices are smaller than those of InAs/GaSb superlattices with the same layer thicknesses, in agreement with the theoretical predictions of Smith and Mailhiot [J. Appl. Phys. 62, 2545 (1987)]. In the case of a 37 Å/25 Å, InAs/Ga0.75In0.25Sb superlattice, an energy gap of 140±40 meV (≊9 μm) is measured. This result demonstrates that far‐infrared cutoff wavelengths are compatible with short superlattice periods in this material system.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
85.60.Gz Photodetectors (including infrared and CCD detectors)
78.55.Cr III-V semiconductors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Measurement of the x‐ray power from transition radiators

M. A. Piestrup and M. J. Moran

Appl. Phys. Lett. 56, 1421 (1990); http://dx.doi.org/10.1063/1.103179 (3 pages) | Cited 9 times

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We report the measurement of the x‐ray power from four transition radiators. The average power from a 44 μA, 104 MeV electron beam penetrating a stack of fifteen 1.5‐μm‐thick aluminum foils was 0.7 mW at a peak photon energy of 1.56 keV with an approximate bandwidth of 40%. The peak power from the same stack in a 17 ns pulse was 58 W. Foil stacks constructed of Mylar, parylene, or boron were either distorted or destroyed by exposure to the high average current electron beam.
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07.85.-m X- and γ-ray instruments
41.60.-m Radiation by moving charges
79.20.Kz Other electron-impact emission phenomena

Electron cyclotron resonance plasma etching of InP in CH4/H2/Ar

S. J. Pearton, U. K. Chakrabarti, A. P. Kinsella, D. Johnson, and C. Constantine

Appl. Phys. Lett. 56, 1424 (1990); http://dx.doi.org/10.1063/1.102487 (3 pages) | Cited 46 times

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Plasma etching of InP in a microwave (2.45 GHz) electron cyclotron resonance (ECR) CH4/H2/Ar discharge has been investigated as a function of additional radio frequency (rf, 13.56 MHz) self‐biasing of the sample. The etch rate of InP in a 1 mTorr, 250 W CH4/H2/Ar (5/15/7) ECR discharge increases linearly with applied rf bias, from 50 Å min−1 at 0 V to 350 Å min−1 at 200 V. Etching under ECR conditions alone yields smooth surface morphologies, while additional rf biasing of the discharge leads to In droplets remaining on the surface. This appears to be a result of preferential removal of P by the high atomic hydrogen density in the discharge. The room‐temperature photoluminescence intensity from InP is reduced by approximately an order of magnitude after ECR etching, but is restored after removal of ∼20 Å from the surface by wet chemical etching. Gold Schottky contacts on InP samples etched under ECR conditions only yield barrier heights of 0.48 eV and ideality factors of 1.1, essentially identical to those on wet‐etched control samples. ECR etching performed with an additional 100 V rf bias yields diodes with barrier heights of 0.44 eV and ideality factors of 1.6. Removal of ∼20 Å of the surface on these samples restores the values to those obtained on the control material.
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81.65.-b Surface treatments
81.40.Rs Electrical and magnetic properties related to treatment conditions
72.80.Ey III-V and II-VI semiconductors
61.72.Bb Theories and models of crystal defects

Doping effects on intersubband absorption in InGaAs/InAlAs multiquantum wells

Hiromitsu Asai and Yuichi Kawamura

Appl. Phys. Lett. 56, 1427 (1990); http://dx.doi.org/10.1063/1.102488 (3 pages) | Cited 9 times

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Doping dependence of intersubband absorption in In0.53 Ga0.47 As/In0.52 Al0.48 As multiquantum wells (MQWs) grown by molecular beam epitaxy is investigated. The MQWs having a constant well width of 130 Å are uniformly doped to a sheet carrier concentration of 4×1011–1×1013 cm−2. Above Ns =1.8×1012 cm−2, the intersubband absorption from the second to the third subband is observed, as well as from the first to the second, which agrees well with theoretical calculations.
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78.30.Fs III-V and II-VI semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
61.72.U- Doping and impurity implantation

Investigation of fluorine in SiO2 and on Si surface by the 19F(p,αγ)16O reaction, secondary‐ion mass spectrometry, and x‐ray photoelectron spectroscopy

Byoung‐gon Yu, Eiichi Arai, Yasushiro Nishioka, Yuzuru Ohji, Seiichi Iwata, and T. P. Ma

Appl. Phys. Lett. 56, 1430 (1990); http://dx.doi.org/10.1063/1.103206 (3 pages) | Cited 8 times

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A fluorinated thermal SiO2, grown after HF surface treatment without de‐ionized water rinse, was estimated to contain ∼3×1013 cm−2 of fluorine by the 19F(p,αγ)16O reaction. Secondary‐ion mass spectrometry data indicate that the SiF distribution is peaked at the SiO2/Si interface in the fluorinated oxide. The time‐dependent change of the absolute amount of fluorine on the HF‐treated silicon surface as a function of storage time in air or in vacuum was also investigated by the 19F(p,αγ)16O reaction. The initial number of fluorine atoms on the HF‐treated silicon surface was estimated to be ∼1015 cm−2 before substantial desorption took place. Fluorine atoms desorb from the silicon surface much more rapidly if the sample is stored in air than in vacuum. These results were also supported by the x‐ray photoelectron spectroscopy measurement.
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85.30.Tv Field effect devices
68.43.-h Chemisorption/physisorption: adsorbates on surfaces
68.35.Dv Composition, segregation; defects and impurities

Low etch pit density GaAs on Si grown by metalorganic chemical vapor deposition

Tetsuo Soga, Takashi Jimbo, and Masayoshi Umeno

Appl. Phys. Lett. 56, 1433 (1990); http://dx.doi.org/10.1063/1.102489 (3 pages) | Cited 15 times

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GaAs was grown on a Si substrate by metalorganic chemical vapor deposition using GaAs/GaAsP strained‐layer superlattice (SLS) intermediate layers. The dislocation density decreases at the interface between GaAs and the SLS, but does not decrease in the SLS. When a GaAs/GaAsP SLS is used as the intermediate layer, part of the threading dislocation propagates into the top GaAs layer because of the lattice mismatch of GaAs and SLS. The low etch pit density of (3–5)×105 cm−2 was obtained by using the intermediate layer of a GaAs/GaAsP SLS and an AlAs/GaAs superlattice with thermal cycle annealing.
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61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Selective dry etching of silicon with respect to germanium

G. S. Oehrlein, T. D. Bestwick, P. L. Jones, and J. W. Corbett

Appl. Phys. Lett. 56, 1436 (1990); http://dx.doi.org/10.1063/1.102490 (3 pages) | Cited 8 times

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We describe a plasma‐based dry etching procedure which permits selective etching of Si over Ge with a Si/Ge etch rate ratio of over 70 and negligible etching of the Ge underlayer. This is achieved in a SF6/H2/CF4 gas mixture by the formation of a thin (≂3 nm) involatile etch stop layer on the Ge surface which consists of Ge‐sulfide and carbonaceous material.
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81.65.-b Surface treatments
61.80.Jh Ion radiation effects
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

High quality long‐wavelength lasers grown by atmospheric organometallic vapor phase epitaxy using tertiarybutylarsine

B. I. Miller, M. G. Young, M. Oron, U. Koren, and D. Kisker

Appl. Phys. Lett. 56, 1439 (1990); http://dx.doi.org/10.1063/1.102491 (3 pages) | Cited 10 times

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High quality long‐wavelength InGaAsP/InP lasers were grown by atmospheric organometallic vapor phase epitaxy using tertiarybutylarsine (TBA) as a substitute for AsH3. Electrical and photoluminescence measurements on InGaAs and InGaAsP showed that TBA‐grown material was at least as good as AsH3 material in terms of suitability for lasers. From two wafers grown by TBA, current thresholds Ith as low as 11 mA were obtained for a 2‐μm‐wide semi‐insulating blocking planar buried heterostructure laser lasing near 1.3 μm wavelength. The differential quantum efficiencies ηD were as high as 21%/facet with a low internal loss α=21 cm−1. In addition Ith as low as 18 mA and ηD as high as 18% have been obtained for multiplequantum well lasers at 1.54 μm wavelength. These results show that TBA might be used to replace AsH3 without compromising on laser performance.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Jj Ion and electron beam-assisted deposition; ion plating
42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes

Growth of high quality 6H‐SiC epitaxial films on vicinal (0001) 6H‐SiC wafers

J. A. Powell, D. J. Larkin, L. G. Matus, W. J. Choyke, J. L. Bradshaw, L. Henderson, M. Yoganathan, J. Yang, and P. Pirouz

Appl. Phys. Lett. 56, 1442 (1990); http://dx.doi.org/10.1063/1.102492 (3 pages) | Cited 64 times

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Previously reported growth of SiC films on SiC by chemical vapor deposition (CVD) used Acheson and Lely α‐SiC crystal substrates. We report the CVD growth and evaluation of high quality 6H‐SiC films on 6H‐SiC wafers cut from large boules grown by the modified‐sublimation process. The single‐crystal 6H‐SiC films were grown on wafers oriented 3° to 4° off the (0001) plane toward the 〈1120〉 direction. The films, up to 12 μm thick, had surfaces that were smooth and featureless. The high quality of the films was demonstrated by optical and electron microscopy, and low‐temperature photoluminescence.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
78.55.Hx Other solid inorganic materials
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)

Atomic layer growth of silicon by excimer laser induced cryogenic chemical vapor deposition

T. Tanaka, T. Fukuda, Y. Nagasawa, S. Miyazaki, and M. Hirose

Appl. Phys. Lett. 56, 1445 (1990); http://dx.doi.org/10.1063/1.102493 (3 pages) | Cited 3 times

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Polycrystalline silicon has been grown by ArF excimer laser (193 nm) induced dissociation of Si2H6 adsorbed on a quartz substrate cooled to −69 °C. Silicon atomic layer growth has also been achieved by controlling the Si2H6 adsorbed layer thickness. It is found that the chemical reactivity of the first one monolayer of Si2H6 in contact with the growing Si surface is extremely high compared to that of the second or third Si2H6 layer. The effective photodissociation reaction rate at 193 nm for the first Si2H6 layer is estimated to be more than 40 times faster than that of an isolated Si2H6 molecule. Such high reactivity of the first monolayer is a possible mechanism of the self‐limiting process in the atomic layer growth.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
82.50.Bc Processes caused by infrared radiation
82.50.Hp Processes caused by visible and UV light

Metalorganic molecular beam epitaxy of InP, Ga0.47In0.53As, and GaAs with tertiarybutylarsine and tertiarybutylphosphine

D. Ritter, M. B. Panish, R. A. Hamm, D. Gershoni, and I. Brener

Appl. Phys. Lett. 56, 1448 (1990); http://dx.doi.org/10.1063/1.102494 (3 pages) | Cited 19 times

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Thermally cracked tertiarybutylarsine and tertiarybutylphosphine were used to replace AsH3 and PH3 for the growth of Ga0.47In0.53As and InP by metalorganic molecular beam epitaxy. For both materials, carrier concentrations n=(1–2)×1015 cm−3 were obtained at 300 and 77 K, with 77 K mobilities of 29 000 and 31 000 cm2 V−1 s−1. The GaAs was p‐type with p=4×1015 cm−3 at both temperatures and a 77 K mobility of 2200 cm2 V−1 s−1. The lifetimes for carriers in 14–60 Å thick quantum wells were 3±1 ns. The reacting arsenic species for epitaxy were As2 and As4. The reacting phosphorus species were PH2 and possibly PH.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Nitrogen pair luminescence in GaAs

Xiao Liu, M.‐E. Pistol, L. Samuelson, S. Schwetlick, and W. Seifert

Appl. Phys. Lett. 56, 1451 (1990); http://dx.doi.org/10.1063/1.102495 (3 pages) | Cited 106 times

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We report on the first observation of different nitrogen pair complexes in GaAs. These complexes, which have been searched for since the ’60s, are studied under the application of hydrostatic pressure. By carefully tuning the pressure, we make one after the other of the NNi pairs (1≤i≤10) appear in the band gap of GaAs and then become the major exciton recombination channel. We compare our results for nitrogen states in GaAs with the classical case of NNi excitons in GaP.
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71.55.Eq III-V semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
78.55.Cr III-V semiconductors

Electrical properties of hydrogenated diamond

Sacharia Albin and Linwood Watkins

Appl. Phys. Lett. 56, 1454 (1990); http://dx.doi.org/10.1063/1.102496 (3 pages) | Cited 54 times

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Hydrogen passivation of deep traps in diamond is demonstrated. Current‐voltage (I‐V) characteristics of polycrystalline thin film and bulk diamond were studied before and after hydrogenation. On hydrogenation, all the samples showed several orders of magnitude increase in conductivity. Hydrogenation was carried out under controlled conditions to study the changes in the I‐V characteristics of the samples. The concentration of uncompensated traps was varied systematically by hydrogenation. The concentration of electrically active hydrogen was determined from the I‐V data. It is shown that hydrogenation is an alternative to deep‐level transient spectroscopy, suitable for characterization of traps in a wide‐band‐gap material like diamond.
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72.80.Sk Insulators
72.80.Ng Disordered solids
73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
73.61.Ng Insulators

Injection and drift of a positively charged hydrogen species in p‐type GaAs

A. J. Tavendale, S. J. Pearton, A. A. Williams, and D. Alexiev

Appl. Phys. Lett. 56, 1457 (1990); http://dx.doi.org/10.1063/1.102497 (3 pages) | Cited 43 times

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Transport of the acceptor‐passivating hydrogen species in p‐type GaAs has been observed in reverse bias annealed Al Schottky diode samples. The motion of the positively charged hydrogen across the depletion region of these diodes is confirmed both by changes in the electrically active acceptor profiles with time, and by direct measurement of the migration using secondary‐ion mass spectrometry on deuterated samples. Acceptor passivation is unstable under minority‐carrier injection by illumination at 25 °C. Hydrogen injection into p‐type GaAs during boiling in water or etching in H2SO4:H2O2:H2O has also been demonstrated.
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72.80.Ey III-V and II-VI semiconductors
73.61.Ey III-V semiconductors
71.55.Eq III-V semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Base doping limits in heterostructure bipolar transistors

B. Jalali, R. N. Nottenburg, A. F. J. Levi, R. A. Hamm, M. B. Panish, D. Sivco, and A. Y. Cho

Appl. Phys. Lett. 56, 1460 (1990); http://dx.doi.org/10.1063/1.102498 (3 pages) | Cited 9 times

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Heterostructure bipolar transistors are used to experimentally determine band offsets in lattice‐matched In0.53Ga0.47As devices. Valence‐band offsets of ΔEV=0.24 eV for Al0.48In0.52As/In0.53Ga0.47As and ΔEV=0.34 eV for InP/In0.53Ga0.47As are measured. Because of band filling in the base, these values place important constraints on p‐type doping levels and emitter injection efficiency in practical devices.
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85.30.De Semiconductor-device characterization, design, and modeling
85.30.Pq Bipolar transistors
71.20.Nr Semiconductor compounds
71.20.Ps Other inorganic compounds
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Transmission electron microscope characterization of AlGaInP grown by organometallic vapor phase epitaxy

G. S. Chen, T. Y. Wang, and G. B. Stringfellow

Appl. Phys. Lett. 56, 1463 (1990); http://dx.doi.org/10.1063/1.102499 (3 pages) | Cited 16 times

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AlGaInP epitaxial layers grown at 690 °C by atmospheric pressure organometallic vapor phase epitaxy are investigated by transmission electron microscopy. For the first time, compositionally modulated and ordered structures are simultaneously observed in AlGaInP alloys. The ordering is of the CuPt type with ordering along the {111} directions. The ordered regions appear as plate‐like microdomains, while the composition modulation takes the form of a fine columnar constrast oriented along the growth direction. In addition, from the results of (001) plan‐view diffraction contrast examination, the principal strain direction associated with the modulation structures is found to be perpendicular to the growth direction and lies in the surface plane. Thus, it is concluded that the spinodal decomposition is initiated and developed on the surface during the growth of the AlGaInP epitaxial layers and, finally, forms the columnar structure.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
64.70.K- Solid-solid transitions
68.35.B- Structure of clean surfaces (and surface reconstruction)
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
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