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16 Apr 1990

Volume 56, Issue 16, pp. 1515-1602

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Magneto‐optical studies of Co/Au ultrathin metallic films

J. Ferré, G. Pénissard, C. Marlière, D. Renard, P. Beauvillain, and J. P. Renard

Appl. Phys. Lett. 56, 1588 (1990); http://dx.doi.org/10.1063/1.103136 (3 pages) | Cited 41 times

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We report on static and dynamic magneto‐optical measurements of the magnetization in ultrathin cobalt films deposited on Au (111). Their large Faraday rotation associated to the squareness of their magnetic hysteresis loop makes these samples very promising as magneto‐optical storage media.
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78.20.Ls Magneto-optical effects
85.70.Sq Magnetooptical devices

Influences of trace metal impurities on the thermal quenching of photoluminescence in hydrogenated amorphous silicon by homogeneous chemical vapor deposition

Z. M. Qian, J. Nijs, H. Michiel, J. Leclair, W. Vandervorst, A. Van Ammel, and R. Mertens

Appl. Phys. Lett. 56, 1591 (1990); http://dx.doi.org/10.1063/1.103137 (3 pages)

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The influence of trace metal impurities of low‐temperature undoped amorphous silicon by homogeneous chemical vapor deposited a‐Si:H has been explored for the first time. The metal impurities Ni, Cr, and Fe cause a shift of the transition temperature for the double‐activated regime to a relatively low value. However, Ga and B impurities quench the photoluminescence intensity at a low temperature. Both of them cause weak photoemission of the films at room temperature. The shift of the transition temperature can be explained by the presence of non‐radiative deep recombination centers. The quenching of the photoluminescence intensity is caused by the presence of nonradiative recombination centers.
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78.55.Hx Other solid inorganic materials
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
61.72.jn Color centers

Proximity effect in electron beam patterned x‐ray masks

C. P. Umbach and A. N. Broers

Appl. Phys. Lett. 56, 1594 (1990); http://dx.doi.org/10.1063/1.103138 (3 pages) | Cited 4 times

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Electron beam exposures of 30 nm Au/5 nm Cr/2.2 μm Si x‐ray lithography mask structures were carried out at 25, 50, 75, and 100 keV to study the reduction in the proximity effect at higher beam voltages resulting from the loss of backscattered electrons out the backside of the masks. Surprisingly, the thin Au/Cr plating base was found to be the major source of backscattering over distances <1.0 μm. In addition, the plating base served to limit the decrease in the ratio of the backscattered to forward scattered exposure that resulted from increasing the beam voltage. These results indicate that simply increasing the beam voltage will not completely eliminate the proximity effect due to backscattering that arises during the electron beam patterning of x‐ray masks.
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78.70.Ck X-ray scattering
85.40.Hp Lithography, masks and pattern transfer

Direct observation of ion transfer in contact charging between a metal and a polymer

H. A. Mizes, E. M. Conwell, and D. P. Salamida

Appl. Phys. Lett. 56, 1597 (1990); http://dx.doi.org/10.1063/1.103139 (3 pages) | Cited 12 times

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Triboelectric charging between metals and insulators is usually thought to involve electron transfer. Doping some polymers with a small amount of salt can significantly change their charging properties, even reversing the sign to which they charge upon contact with a given metal. We show by means of secondary‐ion mass spectrometry that ions of the salt are transferred across the interface in contacts between a doped polymer and a metal. Specifically, we observe a transfer of bromine ions when polystyrene doped with a small amount of the salt cetylpyridinium bromide is contacted to an indium surface.
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68.35.Fx Diffusion; interface formation
66.30.J- Diffusion of impurities
73.40.Ns Metal-nonmetal contacts

Femtosecond excited‐state dynamics of polydiacetylene

J. M. Huxley, P. Mataloni, R. W. Schoenlein, J. G. Fujimoto, E. P. Ippen, and G. M. Carter

Appl. Phys. Lett. 56, 1600 (1990); http://dx.doi.org/10.1063/1.103140 (3 pages) | Cited 20 times

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Femtosecond time‐resolved absorption spectroscopy measurements were performed on polydiacetylene 15‐8 and polydiacetylene p‐toluene sulfonate. The relaxation of the singlet exciton was measured to be a two‐component process with an initial relaxation in ∼95 fs followed by complete recovery in ∼1.5 ps. The rapid formation of broadband photoinduced absorption was observed with recovery in a few picoseconds.
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71.35.-y Excitons and related phenomena
78.47.-p Spectroscopy of solid state dynamics
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