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23 Apr 1990

Volume 56, Issue 17, pp. 1611-1707

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Reduced Staebler–Wronski effect in reactively sputtered hydrogenated amorphous silicon thin films

Mustafa Pinarbasi, John R. Abelson, and Mark J. Kushner

Appl. Phys. Lett. 56, 1685 (1990); http://dx.doi.org/10.1063/1.103117 (3 pages) | Cited 10 times

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The kinetics of light‐induced defect generation or the Staebler–Wronski effect (SWE) have been measured on device quality hydrogenated amorphous silicon (a‐Si:H) films having hydrogen contents (CH) of ∼10–28 at. %. The films were deposited with direct current (dc) magnetron reactive sputtering. The low CH films have a density of defect states (DOS)∼7 to 10×1015 cm−3 which is three to five times higher than the high CH films. Under light exposure, the DOS for low CH films increases slower than that of the high CH or glow discharge produced films; in fact it is smaller after a few hours of light exposure. These measurements show that low CH dc magnetron reactively sputtered a‐Si:H appears to be more stable material for sensitive applications such as solar cells.
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73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
72.80.Ng Disordered solids
72.40.+w Photoconduction and photovoltaic effects
81.40.Rs Electrical and magnetic properties related to treatment conditions

Te doping study in molecular beam epitaxial growth of GaSb using Sb2Te3

T. H. Chiu, J. A. Ditzenberger, H. S. Luftman, W. T. Tsang, and N. T. Ha

Appl. Phys. Lett. 56, 1688 (1990); http://dx.doi.org/10.1063/1.103118 (3 pages) | Cited 15 times

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Te evaporated from a Sb2Te3 compound source has been used to dope GaSb grown by molecular beam epitaxy. Te concentrations up to 2×1019 cm−3 followed a simple Arrhenius behavior with respect to source temperature. Efficient incorporation of Te remained insensitive to growth temperature until above 540 °C. Carrier density was found very close to Te doping level up to about 2×1018 cm−3. Above that, electron mobility as well as crystallinity deteriorated with increasing Te concentration. A dependence of surface reconstruction on Te doping level was observed. A complete change from (1×3) to (2×1) pattern occurred when Te concentration considerably exceeded its solubility limit in GaSb.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
73.61.Ey III-V semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Orientation‐dependent doping in organometallic chemical vapor deposition on nonplanar InP substrates: Application to double‐heterostructure lasers and lateral p‐n junction arrays

R. Bhat, C. E. Zah, C. Caneau, M. A. Koza, S. G. Menocal, S. A. Schwarz, and F. J. Favire

Appl. Phys. Lett. 56, 1691 (1990); http://dx.doi.org/10.1063/1.103119 (3 pages) | Cited 8 times

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In this letter we show that the orientation dependence of dopant incorporation can be used to obtain lateral patterning of doping by growing on nonplanar substrates. Specifically, organometallic chemical vapor deposition has been used to obtain lateral p‐n junction arrays and selective deposition of alternating p‐n layers of InP. The latter technique has been used to grow double‐heterostructure lasers with current confinement layers in a single step.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
42.55.Px Semiconductor lasers; laser diodes
68.35.B- Structure of clean surfaces (and surface reconstruction)

Optical and electronic properties of doped silicon from 0.1 to 2 THz

Martin van Exter and D. Grischkowsky

Appl. Phys. Lett. 56, 1694 (1990); http://dx.doi.org/10.1063/1.103120 (3 pages) | Cited 98 times

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Using a source of freely propagating subpicosecond pulses of THz radiation, we have measured the absorption and dispersion of both N‐ and P‐type, 1 Ω cm silicon from 0.1 to 2 THz. These results give the corresponding frequency‐dependent complex conductance over the widest frequency range to date. The data provide a complete view on the dynamics of both electrons and holes and are well fit by the simple Drude relationship.
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72.20.Fr Low-field transport and mobility; piezoresistance
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
78.47.-p Spectroscopy of solid state dynamics
72.80.Jc Other crystalline inorganic semiconductors

Formation of a high quality two‐dimensional electron gas on cleaved GaAs

Loren Pfeiffer, K. W. West, H. L. Stormer, J. P. Eisenstein, K. W. Baldwin, D. Gershoni, and J. Spector

Appl. Phys. Lett. 56, 1697 (1990); http://dx.doi.org/10.1063/1.103121 (3 pages) | Cited 222 times

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We have succeeded in fabricating a two‐dimensional electron gas (2DEG) on the cleaved (110) edge of a GaAs wafer by molecular beam epitaxy (MBE). A (100) wafer previously prepared by MBE growth is reinstalled in the MBE chamber so that an in situ cleave exposes a fresh (110) GaAs edge for further MBE overgrowth. A sequence of Si‐doped AlGaAs layers completes the modulation‐doped structure at the cleaved edge. Mobilities as high as 6.1×105 cm2/V s are measured in the 2DEG at the cleaved interface.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Flux creep in Bi2Sr2CaCu2O8 epitaxial films

E. Zeldov, N. M. Amer, G. Koren, and A. Gupta

Appl. Phys. Lett. 56, 1700 (1990); http://dx.doi.org/10.1063/1.103220 (3 pages) | Cited 50 times

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We incorporate the experimentally deduced flux line potential well structure into the flux creep model. Application of this approach to the resistive transition in Bi2Sr2CaCu2O8 epitaxial films explains the power law voltage‐current characteristics and the nonlinear current dependence of the activation energy. The results cannot be accounted for by a transition into a superconducting vortex‐glass phase.
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74.25.Uv Vortex phases (includes vortex lattices, vortex liquids, and vortex glasses)
74.70.-b Superconducting materials other than cuprates
74.78.-w Superconducting films and low-dimensional structures

Imaging of ferroelectric domain walls by force microscopy

F. Saurenbach and B. D. Terris

Appl. Phys. Lett. 56, 1703 (1990); http://dx.doi.org/10.1063/1.103122 (3 pages) | Cited 132 times

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We have imaged ferroelectric domain walls in the ferroelectric‐ferroelastic material Gd2(Mo)3 using force microscopy. By using a mode of imaging developed for the detection of static surface charge, the force gradient due to the polarization charge at the sample surface was imaged. The signal was seen to change sign at the domain wall, consistent with the reversal in sign of the polarization across a wall. By modeling the wall as a step function in the electric potential, the general features of the force microscope domain wall image could be explained.
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77.80.Dj Domain structure; hysteresis
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
73.25.+i Surface conductivity and carrier phenomena
07.55.-w Magnetic instruments and components

Microwave imaging by a moment‐method solution to two‐dimensional inverse scattering: Preliminary experimental results

S. Caorsi, G. L. Gragnani, and M. Pastorino

Appl. Phys. Lett. 56, 1706 (1990); http://dx.doi.org/10.1063/1.103123 (2 pages)

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Preliminary results are reported on an experimental reconstruction of dielectric scatterers, for microwave imaging purposes, via a moment‐method solution to the inverse‐scattering problem, in the case of two‐dimensional geometries.
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74.20.-z Theories and models of superconducting state
42.30.Va Image forming and processing
41.20.Gz Magnetostatics; magnetic shielding, magnetic induction, boundary-value problems
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