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30 Apr 1990

Volume 56, Issue 18, pp. 1715-1808

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Laser‐induced fluorescence imaging of laser‐ablated barium

M. A. Cappelli, P. H. Paul, and R. K. Hanson

Appl. Phys. Lett. 56, 1715 (1990); http://dx.doi.org/10.1063/1.103124 (3 pages) | Cited 10 times

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We have applied laser‐induced fluorescence diagnostics to expanding recombining barium plasmas produced by laser ablation. For relatively modest ablation laser energy fluences (∼102–103 W cm−2), we have measured neutral barium leading edge density gradients of 1012–0.5×1013 cm−3 cm−1 and cloud expansion velocities of ∼106 cm s−1, consistent with recent results of ablation studies in copper [R. J. von Gutfeld and D. W. Dreyfus, Appl. Phys. Lett. 54, 1212 (1989)].
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52.70.Kz Optical (ultraviolet, visible, infrared) measurements
51.70.+f Optical and dielectric properties
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
07.60.Rd Visible and ultraviolet spectrometers

High‐power operation of heterobarrier blocking structure InGaAlP visible light laser diodes

K. Itaya, Y. Watanabe, M. Ishikawa, G. Hatakoshi, and Y. Uematsu

Appl. Phys. Lett. 56, 1718 (1990); http://dx.doi.org/10.1063/1.103125 (2 pages) | Cited 7 times

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Heterobarrier blocking structure InGaAlP visible light laser diodes employing a thin active layer (0.04 μm) and asymmetry coatings have been fabricated. The high light‐output power operation with this heterobarrier blocking structure was investigated. The light‐output power versus cw current curve was linear up to 43 mW and a maximum light output power of 51 mW was obtained. A high‐power operation such as 20 mW was maintained at 40 °C. Stable oscillation in the fundamental transverse mode was obtained up to 30 mW. These results show that this heterobarrier blocking structure supplies a sufficient current confinement effect even under a high‐light output power operation.
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42.55.Px Semiconductor lasers; laser diodes
85.60.Jb Light-emitting devices
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Layer disordering of n‐type (Se) and p‐type (C) AlxGa1−xAs‐GaAs superlattices by S diffusion

J. S. Major, J. M. Dallesasse, L. J. Guido, J. E. Baker, W. E. Plano, A. R. Sugg, E. J. Vesely, T. A. Richard, and N. Holonyak

Appl. Phys. Lett. 56, 1720 (1990); http://dx.doi.org/10.1063/1.103126 (3 pages) | Cited 1 time

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Data are presented showing limited layer disordering (or intermixing) of S‐diffused Se‐doped or C‐doped AlxGa1−xAs‐GaAs superlattices. The S diffusion is characterized via secondary‐ion mass spectroscopy, shallow angle beveled cross sections, and absorption measurements. Limited intermixing of column‐III‐site atoms (Al⇄Ga) as well as minimal displacement of the column‐V‐site acceptor C is observed. The S diffusion depth is much greater than that of the layer disordering, the magnitude of which is similar to that of native‐defect vacancy‐assisted disordering (vacancy VIII).
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.U- Doping and impurity implantation
61.72.Bb Theories and models of crystal defects
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Alignment of liquid crystal on a polarizing metal film

David Armitage Development Division

Appl. Phys. Lett. 56, 1723 (1990); http://dx.doi.org/10.1063/1.103127 (2 pages) | Cited 2 times

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Some liquid‐crystal device applications favor a thin‐film polarizer adjacent to the liquid. Wire grid type polarizing metal films fabricated by oblique evaporation can provide liquid‐crystal alignment layers. The alignment of a nematic liquid crystal on a polarizing metal film is reported.
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42.79.-e Optical elements, devices, and systems
68.35.B- Structure of clean surfaces (and surface reconstruction)
85.60.-q Optoelectronic devices
61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order

Balanced phase matching in segmented KTiOPO4 waveguides

J. D. Bierlein, D. B. Laubacher, J. B. Brown, and C. J. van der Poel

Appl. Phys. Lett. 56, 1725 (1990); http://dx.doi.org/10.1063/1.103128 (3 pages) | Cited 51 times

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A new phase matching technique is described which is based on phase mismatch balancing in crystal or waveguide segments that are short compared to their respective coherence lengths. The technique is demonstrated experimentally in a mixed bulk crystal/waveguide structure in KTiOPO4, resulting in a second‐harmonic generation conversion efficiency of 15%/W/cm2 at 1.064 μm, close to the theoretical maximum. We show that this technique can significantly broaden processing latitude for fabricating practical nonlinear optical waveguide devices.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.79.Gn Optical waveguides and couplers
63.10.+a General theory

Holographic image storage in iron‐doped lithium niobate fibers

Hisao Yoshinaga, Ken‐ichi Kitayama, and Hitoshi Oguri

Appl. Phys. Lett. 56, 1728 (1990); http://dx.doi.org/10.1063/1.103129 (3 pages) | Cited 16 times

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Holographic recording on a real‐time basis of two‐dimensional images in an iron‐doped lithium niobate fiber with a 200 μm diameter and 3 mm length is demonstrated for the first time. The erasure time constant as a function of readout beam power, the diffraction efficiency as a function of incident reference angle, and the results of angular‐multiple recording of two images are shown. These results suggest that the LN fiber could replace bulk materials for holographic recordings in optical parallel processing.
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42.40.Lx Diffraction efficiency, resolution, and other hologram characteristics
42.40.Ht Hologram recording and readout methods
42.70.-a Optical materials

Highly efficient pseudomorphic InGaAs/GaAs/AlGaAs single quantum well lasers for monolithic integration

A. Larsson, J. Cody, S. Forouhar, and R. J. Lang

Appl. Phys. Lett. 56, 1731 (1990); http://dx.doi.org/10.1063/1.103106 (3 pages) | Cited 5 times

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Highly efficient ridge waveguide pseudomorphic single quantum well lasers, emitting at 980 nm, have been fabricated from an In0.2Ga0.8As/GaAs/AlGaAs graded‐index separate confinement heterostructure grown by molecular beam epitaxy. The lateral index guiding provided by the ridge reduces the anomalously large lateral loss of optical power found in gain‐guided structures, thereby reducing the internal loss by more than 50%. The low threshold current (7.6 mA) and high differential quantum efficiency (79%) obtained under continuous operation as well as the transparency of the GaAs substrate to the emitted radiation render these lasers attractive for GaAs‐based optoelectronic integration.
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42.55.Px Semiconductor lasers; laser diodes
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Simple reflection technique for measuring the electro‐optic coefficient of poled polymers

C. C. Teng and H. T. Man

Appl. Phys. Lett. 56, 1734 (1990); http://dx.doi.org/10.1063/1.103107 (3 pages) | Cited 302 times

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A simple reflection technique for measuring the electro‐optic coefficient of nonlinear optical polymeric films is described. The technique is based on the polarization rotation of a laser beam due to the electro‐optic effect. It requires no waveguiding and can be used to measure polymeric films during, as well as after, the electrical poling process. The results are in excellent agreement with those obtained from the more conventional but much more time consuming waveguiding method.
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78.20.Jq Electro-optical effects
63.10.+a General theory

Integrated waveguide/photodiodes using vertical impedance matching

R. J. Deri, N. Yasuoka, M. Makiuchi, O. Wada, A. Kuramata, H. Hamaguchi, and R. J. Hawkins

Appl. Phys. Lett. 56, 1737 (1990); http://dx.doi.org/10.1063/1.103084 (3 pages) | Cited 5 times

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A novel ‘‘vertical impedance matching’’ approach is demonstrated to improve absorption in evanescently coupled, integrated waveguide/photodiodes by 500% over conventional structures. Our devices exhibit both high absorption at short length (90% at 190 μm) and efficient fiber butt coupling (42%) at 1.3–1.55 μm wavelengths. Unusual transient phenomena are observed in such impedance‐matched devices and discussed theoretically.
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42.82.-m Integrated optics
85.60.Dw Photodiodes; phototransistors; photoresistors
42.79.Gn Optical waveguides and couplers
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Femtosecond gain dynamics in InGaAsP optical amplifiers

K. L. Hall, J. Mark, E. P. Ippen, and G. Eisenstein

Appl. Phys. Lett. 56, 1740 (1990); http://dx.doi.org/10.1063/1.103085 (3 pages) | Cited 87 times

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We have studied ultrafast gain dynamics in InGaAsP optical amplifiers by means of pump‐probe and cross‐correlation measurements using 180 fs optical pulses. The data show strong gain nonlinearities due to nonequilibrium carrier distributions and differ significantly from those observed in AlGaAs amplifiers.
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42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.55.Px Semiconductor lasers; laser diodes
85.30.De Semiconductor-device characterization, design, and modeling
85.60.Jb Light-emitting devices

Development of a second cyclotron harmonic gyrotron operating at 0.8 mm wavelength

T. Idehara, T. Tatsukawa, I. Ogawa, H. Tanabe, T. Mori, S. Wada, and T. Kanemaki

Appl. Phys. Lett. 56, 1743 (1990); http://dx.doi.org/10.1063/1.103086 (3 pages) | Cited 15 times

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This letter describes the development of a submillimeter wave gyrotron operating at the second harmonic of the cyclotron frequency. The observed frequency is 383 GHz, which corresponds to the wavelength of 0.79 mm, and the output power is about 1 kW. We believe that the frequency is a world record for a stable, long pulse gyrotron operation at the second cyclotron harmonic, without a competition with the operation at the fundamental. Comparisons with the simulation results are represented.
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84.40.Ik Masers; gyrotrons (cyclotron-resonance masers)
52.70.Kz Optical (ultraviolet, visible, infrared) measurements
52.50.Gj Plasma heating by particle beams

High‐brightness pseudospark‐produced electron beam

E. Boggasch and M. J. Rhee

Appl. Phys. Lett. 56, 1746 (1990); http://dx.doi.org/10.1063/1.103087 (3 pages) | Cited 13 times

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The first time‐integrated root mean square (rms) emittance measurement of a pseudospark‐produced electron beam is presented. From a six‐gap pseudospark chamber with argon working gas, ∼10 Hz repetitive pulsed electron beams of average energy ∼20 keV, peak current ∼50 A, and pulse duration ∼10 ns are extracted into a drift tube. A typical value of measured rms emittance is found to be ϵ≊55 mm mrad, yielding a normalized rms emittance of ϵn≊15 mm mrad. The normalized brightness of the beam is then estimated to be Bn≊4×1010 A/(m2  rad2 ).
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29.25.Bx Electron sources
52.59.Px Hard X-ray sources
52.80.Mg Arcs; sparks; lightning; atmospheric electricity
41.75.Fr Electron and positron beams

Photothermal imaging of copper‐decorated grain boundary in silicon

L. J. Inglehart, A. Broniatowski, D. Fournier, A. C. Boccara, and F. Lepoutre

Appl. Phys. Lett. 56, 1749 (1990); http://dx.doi.org/10.1063/1.103088 (3 pages) | Cited 13 times

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Using a scanning photothermal reflectance microscope we have observed a large enhancement of the modulated reflectance signal accompanied by a phase change of π in the region of a copper‐decorated grain boundary in silicon. A preliminary analysis of the data is given in terms of the thermal and plasma waves generated in the specimen. Orders of magnitude of recombination velocities of the surface and the boundary are determined in reasonable agreement with electrical measurements.
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07.60.Pb Conventional optical microscopes
68.37.-d Microscopy of surfaces, interfaces, and thin films
61.72.Mm Grain and twin boundaries

Heteroepitaxial growth of InxGa1−xAs on graphoepitaxially grown germanium

T. Kanata, H. Takakura, M. Matsunaga, and Y. Hamakawa

Appl. Phys. Lett. 56, 1752 (1990); http://dx.doi.org/10.1063/1.103089 (3 pages) | Cited 2 times

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InxGa1−xAs films have been grown by molecular beam epitaxy on graphoepitaxially grown germanium films on nickel replica sheets fabricated from an anisotropic etched silicon (001) surface. The crystallographic and optical properties of the InxGa1−xAs films have been characterized. The crystallographic orientation of the heteroepitaxial InxGa1−xAs has a small deviation from the orientation of synthesized surface relief in the graphoepitaxial substrate. This deviation in the heteroepitaxial film is caused by misorientation of the crystallographic orientation during the graphoepitaxial growth of germanium. The energy gap of the InxGa1−xAs has also a slight deviation from the expected one. The mechanism and its evidence have been studied.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
68.55.-a Thin film structure and morphology

Evidence for tip imaging in scanning tunneling microscopy

E. J. van Loenen, D. Dijkkamp, A. J. Hoeven, J. M. Lenssinck, and J. Dieleman

Appl. Phys. Lett. 56, 1755 (1990); http://dx.doi.org/10.1063/1.103090 (3 pages) | Cited 22 times

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It is demonstrated that scanning tunneling microscopy (STM) images often contain three‐dimensional ghost images of the tunneling tip. These ghost images directly reflect the shape of the tip, as is proven by comparing them with tip indentations made in Si. Tip images appear as a set of identical protrusions, and have been observed regularly on Si surfaces annealed at 1200 K in ultrahigh vacuum. Imaging of rough surfaces may be fully dominated by this effect which can lead to incorrect image interpretations in STM and AFM.
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07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
68.35.B- Structure of clean surfaces (and surface reconstruction)

Imaging metal atoms in air and water using the atomic force microscope

S. Manne, H. J. Butt, S. A. C. Gould, and P. K. Hansma

Appl. Phys. Lett. 56, 1758 (1990); http://dx.doi.org/10.1063/1.103091 (2 pages) | Cited 37 times

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Gold atoms in an epitaxial film on mica are clearly visible in images obtained with an atomic force microscope (AFM). The measured lattice spacing of 3.0± 0.3 Å is consistent with previous scanning tunneling microscope images obtained in air and vacuum. Atoms are visible even if the sample surface, tip, and cantilever are submerged in water in a closed cell. Electrochemical studies of metal electrodes at atomic resolution may now be possible with the AFM.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
07.77.-n Atomic, molecular, and charged-particle sources and detectors
37.20.+j Atomic and molecular beam sources and techniques
33.15.Dj Interatomic distances and angles
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)

Absence of 13C incorporation in 13CCl4‐doped InP grown by metalorganic chemical vapor deposition

B. T. Cunningham, J. E. Baker, S. A. Stockman, and G. E. Stillman

Appl. Phys. Lett. 56, 1760 (1990); http://dx.doi.org/10.1063/1.103092 (3 pages) | Cited 10 times

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Intentional carbon doping of low‐pressure metalorganic chemical vapor deposition (MOCVD) grown InP has been attempted with a 500 ppm mixture of 13CCl4 in high‐purity H2, which has been used to obtain carbon‐acceptor concentrations as high as 1×1019 cm−3 in GaAs. Under growth conditions similar to those used for heavy carbon incorporation in GaAs, injection of 13CCl4 into the growth reactor during growth of InP did not produce any measurable change in the carrier concentration of the InP epitaxial layers or any change in the 13C concentration above the 13C background in secondary‐ion mass spectroscopy analysis. These results support previous low‐temperature photoluminescence measurements of high‐purity InP in which no residual carbon acceptor is observed under many growth techniques and growth conditions, and hence support the hypothesis that carbon is not incorporated in InP grown by MOCVD.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
61.72.U- Doping and impurity implantation
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients

Intrinsic bistability in an optically pumped quantum well structure

A. Zrenner, J. M. Worlock, L. T. Florez, J. P. Harbison, and S. A. Lyon

Appl. Phys. Lett. 56, 1763 (1990); http://dx.doi.org/10.1063/1.103093 (3 pages) | Cited 7 times

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We describe a new semiconductor heterostructure, configured into a bistable device that can be switched either optically or electrically. The two states between which switching occurs involve very different levels of charge accumulation in a quantum well channel, affecting both the photoluminescence spectrum and the vertical photocurrent. The agents in the switching mechanism appear to be hot carriers.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
72.20.Ht High-field and nonlinear effects
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Possible contribution of SiH2 and SiH3 in the plasma‐induced deposition of amorphous silicon from silane

Stan Vepřek and Maritza G. J. Vepřek‐Heijman

Appl. Phys. Lett. 56, 1766 (1990); http://dx.doi.org/10.1063/1.103221 (3 pages) | Cited 16 times

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A self‐consistent quantitative analysis of recent kinetic data on the role of di‐ and trisilane in the plasma‐induced deposition of amorphous silicon from monosilane confirms the conclusion that the dominant reactive intermediate responsible for the formation of di‐ and trisilane and, consequently, for the deposition of a high quality amorphous silicon is SiH2. The data show that the SiH3 radical may play only a negligible, if any, role in this process.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
82.30.Cf Atom and radical reactions; chain reactions; molecule-molecule reactions
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)

Photoreflectance and the electric fields in a GaAs depletion region

Michael Sydor, James R. Engholm, M. O. Manasreh, C. E. Stutz, L. Liou, and K. R. Evans

Appl. Phys. Lett. 56, 1769 (1990); http://dx.doi.org/10.1063/1.103094 (3 pages) | Cited 34 times

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We present results which may resolve the recently reported discrepancy between the experimental and the calculated electric fields in the depletion region of undoped GaAs. The photoreflectance theory reportedly underestimates the electric field by nearly a factor of 2. We have found that changes in photoreflectance with laser pump penetration reveal the full character of the electric field over the entire depletion zone. It is often assumed that the built‐in surface potential produces a uniform electric field throughout a thin (100 nm) undoped layer of GaAs grown on top of a heavily doped energy pinning underlayer. Instead, it appears that the heavily doped underlayer provides a potential step at the interface. The step is separated from the surface depletion zone by a region of low electric field which is characteristic of the low fields found in thick, undoped GaAs with (2–4)×1014/cm3 of unintentional impurities.
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78.20.Jq Electro-optical effects
73.25.+i Surface conductivity and carrier phenomena
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Trajectory domains in a wide‐well double‐barrier tunneling structure in crossed electric and magnetic fields

K. P. Martin, S. Ben Amor, J. J. L. Rascol, R. J. Higgins, R. C. Potter, and H. Hier

Appl. Phys. Lett. 56, 1772 (1990); http://dx.doi.org/10.1063/1.103095 (3 pages) | Cited 1 time

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We report a study of transport in crossed electric and magnetic (B) fields in a double‐barrier tunneling structure with a wide (600 Å) well at T=1.5 K and 0<B<23 T. At B=0 we observe 21 resonances, 11 of which correspond to extended‐state resonances for biases >0.85 V. Under a transverse magnetic field, the bound resonances evolve into magnetoelectric states and are shifted to higher biases. In the low bias range, for high magnetic fields, additional resonances from barrier‐bound skipping states are observed. A semiclassical model for ballistic motion in crossed fields is used to determine boundaries between the different trajectory regimes (i.e., traversing, skipping, bulk‐like) in the magnetic field‐bias voltage space of the resonances. The model shows excellent quantitative agreement with experiment when nonparabolic corrections to the effective mass are included. In addition, the B‐induced shift in the transition from bound to extended‐state tunneling resonances is explained with this simple description.
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73.40.Gk Tunneling
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Relaxed GexSi1−x films grown by rapid thermal processing chemical vapor deposition

K. H. Jung, Y. M. Kim, and D. L. Kwong

Appl. Phys. Lett. 56, 1775 (1990); http://dx.doi.org/10.1063/1.103096 (3 pages) | Cited 16 times

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High quality, epitaxial, relaxed GexSi1−x layers have been grown by rapid thermal processing chemical vapor deposition. Relaxation is believed to be due primarily to the high deposition temperature of 1000 °C and occurred through the formation of an asymmetric misfit dislocation network aligned along the 〈110〉 directions and confined to the interface. The only other defects observed were single threading dislocations at the ends of misfit dislocations.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)

Shallow junction formation by dopant diffusion from in situ doped polycrystalline silicon chemically vapor deposited in a rapid thermal processor

T. Y. Hsieh, H. G. Chun, D. L. Kwong, and D. B. Spratt

Appl. Phys. Lett. 56, 1778 (1990); http://dx.doi.org/10.1063/1.103097 (3 pages) | Cited 5 times

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Shallow n+‐p junctions were formed by utilizing an in situ doped thin polycrystalline silicon layer as a diffusion source. The in situ arsenic‐doped polycrystalline silicon films were deposited by rapid thermal processing chemical vapor deposition. The dopant pileup phenomena were observed at both the polycrystalline silicon/silicon interface and at the surface. The dopant concentrations were higher when the deposition temperatures were lower. The observed pileup phenomena at the polycrystalline silicon/silicon interface were temperature dependent and mainly due to the segregation of arsenic at the grain boundary. The dopant distribution was mainly due to the grain boundary diffusion and grain growth mechanisms. Extremely shallow n+‐p junctions were achieved and laterally uniform delineated junctions were observed. The dopant concentration in the Si substrate drops two orders of magnitude in less than 500 Å.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Deposition of diamond films at low pressures and their characterization by positron annihilation, Raman, scanning electron microscopy, and x‐ray photoelectron spectroscopy

S. C. Sharma, C. A. Dark, R. C. Hyer, M. Green, T. D. Black, A. R. Chourasia, D. R. Chopra, and K. K. Mishra

Appl. Phys. Lett. 56, 1781 (1990); http://dx.doi.org/10.1063/1.103098 (3 pages) | Cited 13 times

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We have deposited diamond films with micron‐size crystals on Si〈111〉 using low‐pressure hot‐filament‐assisted chemical vapor deposition. These films have been characterized by positron annihilation, Raman spectroscopy, scanning electron microscopy, and x‐ray photoelectron spectroscopy. In addition to the results for the electronic structure and morphology, we also present new results for the lattice defects present in these films.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.55.-a Thin film structure and morphology

Ion channeling investigation of the lattice location of Sn atoms in GaAs thin films grown by molecular beam epitaxy

Kin Man Yu, Henry P. Lee, and S. Wang

Appl. Phys. Lett. 56, 1784 (1990); http://dx.doi.org/10.1063/1.103099 (3 pages) | Cited 3 times

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We have investigated the lattice location of Sn atoms in Sn‐doped GaAs thin films grown by molecular beam epitaxy using ion channeling techniques. Accumulation of ≊2×1014 atoms/cm2 of Sn on the GaAs surface was detected. These surface Sn atoms were determined to be randomly distributed within ≊20 Å of the surface of the GaAs. Angular scans of the Ga Kα, As Kβ, and Sn L x rays across the 〈100〉, 〈110〉, and 〈111〉 axial channels indicated that the Sn atoms in the GaAs layer are mostly substitutional. No displacement of the Sn atoms larger than 0.14 Å from the substitutional sites was detected.
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61.85.+p Channeling phenomena (blocking, energy loss, etc.)
61.72.jd Vacancies
61.72.jj Interstitials
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
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