APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

8 Jan 1990

Volume 56, Issue 2, pp. 103-200

Page 1 of 2 Pages Next Page | Jump to Page

Single mode optical waveguides and phase shifters using InGaAlAs on InP grown by molecular beam epitaxy

Jagadeesh Pamulapati and Pallab K. Bhattacharya

Appl. Phys. Lett. 56, 103 (1990); http://dx.doi.org/10.1063/1.103045 (2 pages)

Full Text: | Download PDF

Show Abstract
We have investigated the characteristics of molecular beam epitaxial In0.53 (Gax Al1−x )0.47 As/InP waveguides and phase modulators in the 1.15–1.3 μm wavelength range. Loss at 1.15 μm has been measured and is ∼5 dB/cm. The measured phase shift due to the electro‐optic effect results in an electro‐optic coefficient r63 ∼0.6×10−12 m/V. Preliminary results at 1.3 μm show that the loss is reduced and is ∼3.4 dB/cm.
Show PACS
42.79.Gn Optical waveguides and couplers
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
42.79.Hp Optical processors, correlators, and modulators

Hydrogenated multiple stripe high‐power long‐wavelength (1.06 μm) continuous (10–50 °C) AlyGa1−yAs‐GaAs‐InxGa1−xAs quantum well heterostructure lasers

J. S. Major, W. E. Plano, A. R. Sugg, D. C. Hall, N. Holonyak, and K. C. Hsieh

Appl. Phys. Lett. 56, 105 (1990); http://dx.doi.org/10.1063/1.103194 (3 pages) | Cited 7 times

Full Text: | Download PDF

Show Abstract
High‐power operation of hydrogenated AlyGa1−yAs‐GaAs‐InxGa1−xAs ten‐stripe arrays operating at λ∼1.06 μm is described. Continuous (cw) operation of arrays with uncoated facets that are stabilized in temperature at 10 °C has produced output powers as high as 375 mW/facet at 1.4 A. The optical coupling of the gain‐guided arrays is shown to be significantly different from otherwise similar arrays fabricated in the AlyGa1−yAs‐GaAs system. Limited ‘‘lifetesting’’ (168 h) of these strained layer diodes, stabilized at 50 °C and a cw output power of 100 mW/facet (200 mW total), indicates good operating stability.
Show PACS
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.60.Dv Thermal stability; thermal effects

Quasi‐phase‐matched second‐harmonic generation of blue light in periodically poled LiNbO3

G. A. Magel, M. M. Fejer, and R. L. Byer

Appl. Phys. Lett. 56, 108 (1990); http://dx.doi.org/10.1063/1.103276 (3 pages) | Cited 110 times

Full Text: | Download PDF

Show Abstract
LiNbO3 crystals with periodically alternating ferroelectric domains have been produced using laser‐heated pedestal growth. Domain thicknesses as small as 1 μm have been achieved. This material was applied to room‐temperature, quasi‐phase‐matched frequency doubling to generate light at wavelengths as short as 407 nm, using the d33 and d22 nonlinear coefficients. The measured conversion efficiencies and wavelength and temperature tuning bandwidths are consistent with an effective interaction length of ≊320 μm (>230 domains). An initial test with high‐intensity focused blue beams showed that the periodically poled material exhibits no discernible photorefractive damage effect.
Show PACS
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.20.-e Optical properties of bulk materials and thin films
77.80.Dj Domain structure; hysteresis
81.10.Fq Growth from melts; zone melting and refining

Monolithic hybrid mode‐locked 1.3 μm semiconductor lasers

P. A. Morton, J. E. Bowers, L. A. Koszi, M. Soler, J. Lopata, and D. P. Wilt

Appl. Phys. Lett. 56, 111 (1990); http://dx.doi.org/10.1063/1.103046 (3 pages) | Cited 23 times

Full Text: | Download PDF

Show Abstract
We describe the first results of hybrid mode locking combining both active and passive mode locking of a semiconductor laser. These functions are integrated into a monolithic device with a 1.3 μm GaInAsP gain region, an active waveguide, and a saturable absorber. The devices have low threshold currents, and exhibit hysteresis in their light/current characteristics. The long integrated waveguides allow mode locking at a repetition rate of 15 GHz without the need for an external cavity. Pulse widths as short as 1.4 ps have been demonstrated using the combined effects of active and passive mode locking.
Show PACS
42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes
42.82.-m Integrated optics
42.79.Gn Optical waveguides and couplers

Coherent coupling of independent grating‐surface‐emitting diode laser arrays using an external prism

N. W. Carlson, G. A. Evans, M. Lurie, J. M. Hammer, C. J. Kaiser, and S. K. Liew

Appl. Phys. Lett. 56, 114 (1990); http://dx.doi.org/10.1063/1.103047 (3 pages) | Cited 1 time

Full Text: | Download PDF

Show Abstract
Pairs of grating surface‐emitting arrays, on a single wafer but free‐running, were externally coupled with a prism. The prism acted as an optical coupler between one distributed Bragg reflector in each array. Injection locking was demonstrated by observing a dramatic increase in the lateral coherence of the far field of the prism‐coupled arrays.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.79.Dj Gratings
42.79.Gn Optical waveguides and couplers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Light‐activated two‐level resistance switching: An extremely sensitive GaAs/AlGaAs solid‐state photon counter

E. S. Snow, P. M. Campbell, O. J. Glembocki, W. J. Moore, and S. W. Kirchoefer

Appl. Phys. Lett. 56, 117 (1990); http://dx.doi.org/10.1063/1.103195 (3 pages) | Cited 4 times

Full Text: | Download PDF

Show Abstract
Data are presented on a new type of extremely quiet and sensitive GaAs/AlGaAs photodetector. The photoresponse of the device is controlled by a hole trap in a tunnel barrier. Capture of a single photoinjected hole by the trap gates the device and produces an easily measured current pulse which can be counted by a conventional pulse‐counting apparatus. There is only one detectable trap in a photoactive area of ≂400 μm2. However, due to electric field channeling effects the trap collects photoinjected holes with a 1% efficiency in the active region. The absence of measurable dark counts in a 25 h period at 77 K establishes a minimum detectable photon flux <0.001 photons/s at 8200 Å.
Show PACS
85.60.Gz Photodetectors (including infrared and CCD detectors)
72.40.+w Photoconduction and photovoltaic effects
72.70.+m Noise processes and phenomena
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Integrated optic adiabatic polarization splitter on silicon

Yosi Shani, Charles H. Henry, R. C. Kistler, R. F. Kazarinov, and K. J. Orlowsky

Appl. Phys. Lett. 56, 120 (1990); http://dx.doi.org/10.1063/1.103277 (2 pages) | Cited 19 times

Full Text: | Download PDF

Show Abstract
An adiabatic polarization splitter, fabricated with silica and silicon nitride films on a silicon substrate, is demonstrated. A rejection of the unwanted polarization (cross talk) of −20 to −34 dB was achieved with single filtering and −35 to −45 dB with double filtering. The device had a 1.5 dB insertion loss and a very small wavelength dependence.
Show PACS
42.82.-m Integrated optics
42.79.Gn Optical waveguides and couplers
78.66.-w Optical properties of specific thin films
42.79.Bh Lenses, prisms and mirrors
42.79.Fm Reflectors, beam splitters, and deflectors

Wavelength switching in InGaAs/InP quantum well lasers

K. Berthold, A. F. J. Levi, T. Tanbun‐Ek, and R. A. Logan

Appl. Phys. Lett. 56, 122 (1990); http://dx.doi.org/10.1063/1.103048 (3 pages) | Cited 7 times

Full Text: | Download PDF

Show Abstract
The threshold current density of multiple and single quantum well lasers as a function of cavity length has been investigated. A dramatic change of the lasing wavelength and a strong increase of the threshold current density is observed for a single quantum well laser when the cavity length is reduced to ∼400 μm. In addition, discrete widely separated wavelength switching with changes up to 50 nm is achieved using an intracavity electroabsorption region.
Show PACS
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking

InGaAs/InAsPSb diode lasers with output wavelengths at 2.52 μm

Ramon U. Martinelli and Thomas J. Zamerowski

Appl. Phys. Lett. 56, 125 (1990); http://dx.doi.org/10.1063/1.103049 (3 pages) | Cited 6 times

Full Text: | Download PDF

Show Abstract
We have studied InGaAs/InAsPSb double heterojunction, oxide stripe lasers grown by hydride vapor phase epitaxy. At 80 K the threshold current density is 0.4 kA/cm2, the staturated output power is about 4 mW, and the differential quantum efficiency just above threshold is 20% per facet. The output wavelength increases from 2.44 μm at 80 K to 2.52 μm at 190 K. A layer of compositionally graded InGaAs accommodates the 2% lattice mismatch between the InP substrate and the laser structure. The operating characteristics of these lasers are compared with those of InGaAs/InAsP lasers. Their improved performance results from the better electrical and optical confinement of the InAsPSb cladding layers.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
85.60.Jb Light-emitting devices

Anomalous oxygen precipitation in Czochralski silicon

Wen Lin and A. S. Oates

Appl. Phys. Lett. 56, 128 (1990); http://dx.doi.org/10.1063/1.103050 (3 pages) | Cited 1 time

Full Text: | Download PDF

Show Abstract
The effect of curvature of the liquid‐solid interface of the Czochralski silicon crystal on microdefect occurrence is examined via the crystal’s oxygen precipitation behavior. Curved interface regions were found to contain more microdefects than the flat interfaced regions. Annealing results at high and low‐high temperatures show that oxygen precipitation is dominated by heterogeneous nucleation at a high temperature (1050 °C) without a prior low‐temperature nucleation treatment. Therefore, oxygen precipitation in crystals lacking grown‐in microdefects would be retarded. When a low‐high cycle containing a low temperature near 700 °C is used, the homogeneous nucleation mechanism dominates, and the impact of grown‐in microdefects on oxygen precipitation is diminished.
Show PACS
68.08.-p Liquid-solid interfaces
68.43.-h Chemisorption/physisorption: adsorbates on surfaces
81.30.Mh Solid-phase precipitation
61.72.Bb Theories and models of crystal defects
68.35.Dv Composition, segregation; defects and impurities

Epitaxial growth of aligned polydiacetylene films on anisotropic orienting polymers

J. S. Patel, Sin‐Doo Lee, G. L. Baker, and J. A. Shelburne

Appl. Phys. Lett. 56, 131 (1990); http://dx.doi.org/10.1063/1.103051 (3 pages) | Cited 5 times

Full Text: | Download PDF

Show Abstract
We report an epitaxial method for orienting thin films of polydiacetylenes on ordinary alignment polymers that have been stretched by rubbing. By selectively removing the alignment polymer using standard photolithographic techniques, we show that it is possible to obtain well‐oriented polydiacetylene films in desired regions. Typical values for the birefringence are 0.14±0.01 for epitaxially grown films, enough to allow the formation of gratings and channel waveguides on patterned surfaces.
Show PACS
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
42.79.Gn Optical waveguides and couplers
42.79.Dj Gratings
78.66.Qn Polymers; organic compounds

Growth of diamond films on silicon from an oxygen‐acetylene flame

Y. Tzeng, C. Cutshaw, R. Phillips, T. Srivinyunon, A. Ibrahim, and B. H. Loo

Appl. Phys. Lett. 56, 134 (1990); http://dx.doi.org/10.1063/1.103052 (3 pages) | Cited 30 times

Full Text: | Download PDF

Show Abstract
Clear diamond films have been deposited on silicon substrates by a tilted oxygen‐acetylene flame operating at one atmosphere pressure in air. High quality diamond films are formed by well‐defined diamond crystallites in the octahedral and cubooctahedral shapes as well as of intermediate forms. Raman spectra of the flame deposited diamond display a peak very close to that for natural diamond with little or no broad band corresponding to graphitic bonding as well as a peak corresponding to the underlying silicon substrate. This shows that the diamond is transparent to visible light and that there are little or no interfacial materials other than silicon and diamond. Using an O2 :C2 H2 volume ratio around 0.98 high quality diamond films thicker than 10 μm have been grown on silicon in less than 30 min by an oxygen‐acetylene flame that is aimed at the silicon substrate at about 70° with respect to the direction normal to the silicon surface.
Show PACS
81.15.Rs Spray coating techniques
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
05.70.-a Thermodynamics
78.30.Hv Other nonmetallic inorganics

Pressure‐enhanced solid phase epitaxy of germanium

G. Q. Lu, E. Nygren, M. J. Aziz, D. Turnbull, and C. W. White

Appl. Phys. Lett. 56, 137 (1990); http://dx.doi.org/10.1063/1.103053 (3 pages) | Cited 29 times

Full Text: | Download PDF

Show Abstract
We have measured the effect of pressure on the solid phase epitaxial growth rate of Ge(100) into self‐implanted amorphous Ge by using in situ time‐resolved infrared interferometry in a high‐temperature, high‐pressure diamond anvil cell. In the temperature range 300–365 °C, a rate enhancement of more than a factor of 100 over that at ambient pressure has been observed due to hydrostatic pressures of up to 5.2 GPa (52 kbar). The pressure enhancement is characterized by a negative activation volume of −6.2±0.6 cm3/mol (−45% of the atomic volume), which is of the same sign but greater in magnitude than we found in Si. We conclude that the defects controlling the solid phase epitaxy of Ge cannot be vacancies in the crystal, that mechanisms based on other point defects migrating to the interface from either phase are unlikely, and that mechanisms based on point defects residing in the interface are plausible.
Show PACS
81.15.Np Solid phase epitaxy; growth from solid phases
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.35.Fx Diffusion; interface formation
66.30.H- Self-diffusion and ionic conduction in nonmetals

Asymmetric strain distributions resulting from deliberately induced misfit dislocations

C. G. Tuppen, C. J. Gibbings, M. Hockly, and M. A. G. Halliwell

Appl. Phys. Lett. 56, 140 (1990); http://dx.doi.org/10.1063/1.103054 (3 pages) | Cited 6 times

Full Text: | Download PDF

Show Abstract
Misfit dislocations oriented in a specific 〈110〉 direction have been produced in strained Si1−xGex epitaxial layers deposited on Si(001), using sites of localized crystallographic damage as dislocation sources. During a high‐temperature anneal, misfit dislocation propagation from a series of parallel saw lines oriented along a particular 〈110〉 direction led to asymmetrically strained material demonstrating an orthorhombic symmetry. Processing conditions required to maximize [110]/[110] asymmetry in the strain distribution are discussed. The distance of a dislocation front emanating from the sites of crystallographic damage during a high‐temperature anneal has been used to measure the misfit dislocation glide velocity.
Show PACS
61.72.Bb Theories and models of crystal defects
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
68.55.-a Thin film structure and morphology
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Effect of conventional and rapid thermal annealing on platinum silicide Schottky barrier diodes

C. A. Dimitriadis

Appl. Phys. Lett. 56, 143 (1990); http://dx.doi.org/10.1063/1.103055 (3 pages) | Cited 8 times

Full Text: | Download PDF

Show Abstract
The effects of rapid thermal annealing (RTA) on the material properties and on the performance of Pt Schottky barriers on Si are investigated and compared with the effects of corresponding furnace annealings. For fabrication of platinum silicide‐silicon Schottky diodes, furnace annealing degrades the minority‐carrier diffusion length, while Schottky diodes prepared by RTA have better performance without degradation of the diffusion length.
Show PACS
73.30.+y Surface double layers, Schottky barriers, and work functions
81.40.Rs Electrical and magnetic properties related to treatment conditions
73.40.Ns Metal-nonmetal contacts
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Zinc‐stimulated outdiffusion of iron in InP

E. W. A. Young and G. M. Fontijn

Appl. Phys. Lett. 56, 146 (1990); http://dx.doi.org/10.1063/1.103058 (2 pages) | Cited 21 times

Full Text: | Download PDF

Show Abstract
High‐resistivity InP (108 Ω cm) can be grown by means of metal organic vapor phase epitaxy using ferrocene as a dopant source. Adjacent zinc‐doped layers of InP annihilate the resistivity of the (intentionally) iron‐doped InP. The presence of Zn dramatically enhances outdiffusion of iron out off intentionally iron‐doped layers of InP into the Zn‐doped InP. Diffusion of Zn into the iron‐doped InP is also observed.
Show PACS
66.30.J- Diffusion of impurities
73.61.Ey III-V semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.40.Rs Electrical and magnetic properties related to treatment conditions

Photoluminescence study of nitrogen‐oxygen donors in silicon

A. G. Steele, L. C. Lenchyshyn, and M. L. W. Thewalt

Appl. Phys. Lett. 56, 148 (1990); http://dx.doi.org/10.1063/1.103059 (3 pages) | Cited 11 times

Full Text: | Download PDF

Show Abstract
The series of nitrogen‐oxygen donors recently observed in infrared absorption has been studied for the first time using photoluminescence spectroscopy. These complexes are found to bind excitons and multiexcitonic complexes, with an exciton localization energy of 3.9 meV. Conclusive identification of the exciton binding centers with the nitrogen‐oxygen donors is provided by the observation of bound‐exciton two‐electron transitions which leave the donors in their 2s or 2p± excited states.
Show PACS
71.55.Ht Other nonmetals
71.35.-y Excitons and related phenomena
78.55.Hx Other solid inorganic materials
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors

Doping superlattices based on InSb for mid‐infrared detector applications

C. C. Phillips

Appl. Phys. Lett. 56, 151 (1990); http://dx.doi.org/10.1063/1.103060 (3 pages) | Cited 13 times

Full Text: | Download PDF

Show Abstract
The suitability of doping (‘‘nipi’’) superlattices based on InSb for 10 μm detector applications is studied and 77 K D∗ values of 8.1×1010 cm√Hz/W are found in optimized structures. The mode of nipi operation results in ‘‘self‐passivating’’ devices which are compatible with III‐V processing technology, and sensitivity uniformity figures superior to CdHgTe devices for large‐area integrated detector arrays are predicted.
Show PACS
85.60.Gz Photodetectors (including infrared and CCD detectors)
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
73.50.Pz Photoconduction and photovoltaic effects
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Fabrication and characterization of quantum well wires grown on corrugated GaAs substrates by molecular beam epitaxy

Keisuke Kojima, Kazumasa Mitsunaga, and Kazuo Kyuma

Appl. Phys. Lett. 56, 154 (1990); http://dx.doi.org/10.1063/1.103036 (3 pages) | Cited 10 times

Full Text: | Download PDF

Show Abstract
Single quantum wells were grown on GaAs triangular gratings by molecular beam epitaxy. Cross‐sectional transmission electron microscopy revealed that the quantum wells had a triangular shape above the ridge of the grating. The photoluminescence spectra at 77 K showed strong anisotropy, indicating that the electrons are confined two dimensionally. The calculation confirmed that the electrons tend to be localized at the corner of the bent quantum well wires, and the effective width of the quantum well wire was estimated to be 30 nm.
Show PACS
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.55.Cr III-V semiconductors

First observation of the 29Si hyperfine spectra of silicon dangling bond centers in silicon nitride

P. M. Lenahan and Sean E. Curry

Appl. Phys. Lett. 56, 157 (1990); http://dx.doi.org/10.1063/1.103278 (3 pages) | Cited 50 times

Full Text: | Download PDF

Show Abstract
We report the first observation of 29Si hyperfine spectra of the deep trapping center which dominates the electronic properties of silicon nitride films. Our results provide the first conclusive evidence that the center is a silicon ‘‘dangling bond’’ defect. Our results also demonstrate that the unpaired electron is highly localized (about 75%) on the central silicon and that the wave function is primarily p type.
Show PACS
73.20.Hb Impurity and defect levels; energy states of adsorbed species
73.61.Ng Insulators
61.05.Qr Magnetic resonance techniques; Mössbauer spectroscopy (for structure determination only)

Transistor‐based measurements of electron injection currents in p‐type GaAs doped 1018–1020 cm−3

M. E. Klausmeier‐Brown, M. R. Melloch, and M. S. Lundstrom

Appl. Phys. Lett. 56, 160 (1990); http://dx.doi.org/10.1063/1.103037 (3 pages) | Cited 7 times

Full Text: | Download PDF

Show Abstract
Measurements of electron currents injected into p+‐GaAs are presented for molecular beam epitaxially grown material doped from 2×1018 to 8×1019 cm−3 with Be. The collector current versus base‐emitter voltage characteristics of n‐p+‐n GaAs homojunction bipolar transistors are analyzed, and the results are interpreted in terms of the quantity (n0Dn), where n0 is the equilibrium minority‐carrier concentration and Dn is the minority‐carrier diffusion coefficient. The results are consistent with earlier measurements of (n0Dn) made using metalorganic chemical vapor deposited p+‐n GaAs solar cells, Zn doped as heavily as 1×1019 cm−3. The large electron injection currents observed are interpreted as evidence for significant effective band‐gap shrinkage. These effects must be accounted for in the modeling and design of GaAs‐based heterojunction bipolar transistors and solar cells.
Show PACS
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
84.60.Jt Photoelectric conversion
85.30.Pq Bipolar transistors
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Deep level photodiffractive spectroscopy of semiconductors

D. D. Nolte, D. H. Olson, and A. M. Glass

Appl. Phys. Lett. 56, 163 (1990); http://dx.doi.org/10.1063/1.103038 (3 pages) | Cited 9 times

Full Text: | Download PDF

Show Abstract
Defect levels in semi‐insulating GaAs and InP are investigated by deep level photodiffractive spectroscopy. Temperature‐dependent four‐wave mixing based both on photochromic and photorefractive effects permits a determination of the energy levels within the semiconductor band gap. This optical technique eliminates difficulties encountered with high‐resistivity material using conventional electrical measurements.
Show PACS
71.55.Eq III-V semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.40.+w Photoconduction and photovoltaic effects
78.20.Jq Electro-optical effects

Self‐electro‐optic effect based on anticrossing of excitonic transitions in a coupled quantum well structure

Yasunori Tokuda, Kyozo Kanamoto, and Noriaki Tsukada

Appl. Phys. Lett. 56, 166 (1990); http://dx.doi.org/10.1063/1.103017 (2 pages) | Cited 21 times

Full Text: | Download PDF

Show Abstract
We demonstrate electrically controlled photocurrent (absorption) tristability in an asymmetric coupled quantum well p‐i‐n diode connected to a series resistive load. The phenomenon, which is explained in terms of a self‐electro‐optic effect, is brought about by making use of an anticrossing behavior of excitonic optical transitions instead of the usual quantum‐confined Stark effect.
Show PACS
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
42.65.Pc Optical bistability, multistability, and switching, including local field effects
85.60.Dw Photodiodes; phototransistors; photoresistors

Fractional states in few‐electron systems

W. Hansen, T. P. Smith, K. Y. Lee, J. M. Hong, and C. M. Knoedler

Appl. Phys. Lett. 56, 168 (1990); http://dx.doi.org/10.1063/1.103018 (3 pages) | Cited 15 times

Full Text: | Download PDF

Show Abstract
We have observed fractional quantization of very few electrons confined in a semiconductor quantum dot using capacitance spectroscopy. The number of electrons per dot varies from 0 to about 40 as a function of bias on the quantum capacitors. The capacitance spectra have clear minima at gate voltages and magnetic fields, where the filling factors are 1/3 and 2/3. These measurements may allow direct comparison with few‐particle calculations.
Show PACS
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
71.45.-d Collective effects

Regrown ohmic contacts to thin GaAs layers and two‐dimensional electron gas

A. Palevski, P. Solomon, T. F. Kuech, and M. A. Tischler

Appl. Phys. Lett. 56, 171 (1990); http://dx.doi.org/10.1063/1.103019 (3 pages) | Cited 6 times

Full Text: | Download PDF

Show Abstract
We report on the first realization of extremely low resistivity regrown ohmic contacts to a variety of GaAs/AlGaAs structures using selective epitaxy. For planar regrown n+‐GaAs contacts to n‐GaAs we have obtained contact resistivity values ∼1×10−7 Ω cm2, and ∼1×10−8 Ω cm2 for lateral contacts to a 10‐nm‐thick buried n+‐GaAs layer. The contact resistances were substantially temperature independent from 77 to 300 K. Regrown contacts to a 2DEG structure exhibited a much higher and temperature‐dependent contact resisitivity which could be accounted for (according to numerical simulation) by ∼5×1012 cm−2 traps at the AlGaAs/ regrown GaAs interface. Post‐growth annealing of the regrown annealing of the regrown interface drastically reduced the value of contact resistivity for 2DEG structures to ∼2×10−8 Ω cm2.
Show PACS
73.40.Cg Contact resistance, contact potential
73.61.Ey III-V semiconductors
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
Page 1 of 2 Pages Next Page | Jump to Page
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close