APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

21 May 1990

Volume 56, Issue 21, pp. 2059-2153

Page 1 of 2 Pages Next Page | Jump to Page

Room‐temperature operation of three‐terminal quantum‐confined field‐effect light emitters

Y. Kan, M. Okuda, M. Yamanishi, T. Ohnishi, K. Mukaiyama, and I. Suemune

Appl. Phys. Lett. 56, 2059 (1990); http://dx.doi.org/10.1063/1.102992 (3 pages) | Cited 3 times

Full Text: | Download PDF

Show Abstract
The field control of the luminescent characteristics is investigated with three‐terminal field‐effect light‐emitting devices with superlattice buffer layers, showing a high‐speed switching (∼0.8 ns) of emission intensity, free from lifetime limitation at room temperature and a high quantum yield of the emission intensity, i.e., an external efficiency ηex≥1%. It is demonstrated that a combination of the field control of radiative lifetime with carrier leakage results in a high‐speed modulation of luminescence intensity under a fixed carrier population in the active layer, unchanged with and without electric fields.
Show PACS
85.60.Jb Light-emitting devices
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Electronic optical bistability in an InGaAs/InAlAs multiple quantum well étalon at 1.5 μm wavelength

K. Nonaka, Y. Kawamura, H. Kawaguchi, and K. Kubodera

Appl. Phys. Lett. 56, 2062 (1990); http://dx.doi.org/10.1063/1.102973 (3 pages) | Cited 4 times

Full Text: | Download PDF

Show Abstract
Optical bistabilities due to electronic refractive index changes are observed in an InGaAs/InAlAs multiple quantum well étalon device at around 1.5 μm wavelength. The switching speeds of less than 30 ns and the induced refractive index changes of −0.1% are observed using a tunable F‐center laser.
Show PACS
42.65.Pc Optical bistability, multistability, and switching, including local field effects
07.60.-j Optical instruments and equipment
42.79.-e Optical elements, devices, and systems
42.79.Ci Filters, zone plates, and polarizers

High‐reliability silicon microchannel submount for high average power laser diode arrays

R. Beach, D. Mundinger, W. Benett, V. Sperry, B. Comaskey, and R. Solarz

Appl. Phys. Lett. 56, 2065 (1990); http://dx.doi.org/10.1063/1.103192 (3 pages) | Cited 4 times

Full Text: | Download PDF

Show Abstract
A simple and highly reliable package consisting of a 1‐cm‐long AlGaAs laser diode array mounted directly on a silicon microchannel cooler has been demonstrated. 3.4×109 shots were logged on this device at an average optical output of 8.75 W with only a 6% increase in current required to hold the light output constant. This extrapolates to a current doubling lifetime of 1.6×1011 shots. The thermal impedance was also measured to be 0.014 °C/(W/cm2).
Show PACS
42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Grating‐surface‐emitting lasers in a ring configuration

D. J. Bossert, R. K. DeFreez, H. Ximen, R. A. Elliott, J. M. Hunt, G. A. Wilson, J. Orloff, G. A. Evans, N. W. Carlson, M. Lurie, J. M. Hammer, D. P. Bour, S. L. Palfrey, and R. Amantea

Appl. Phys. Lett. 56, 2068 (1990); http://dx.doi.org/10.1063/1.102974 (3 pages) | Cited 6 times

Full Text: | Download PDF

Show Abstract
A monolithic grating‐surface‐emitting ring laser has been fabricated and its spectral properties and far‐field radiation pattern studied. The ring laser was configured from two columns of two‐dimensional grating‐surface‐emitting diode laser arrays. The columns were optically linked at each end with total‐internal‐reflection corner turning mirrors formed by micromachining grooves in the wafer with a focused ion beam. Single longitudinal mode operation with a high degree of spatial coherence between the two columns and a narrowing of the lateral far‐field pattern were observed.
Show PACS
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Fc Modulation, tuning, and mode locking

Blue light generation by nonlinear mixing of Nd:YAG and GaAlAs laser emission in a KNbO3 resonant cavity

L. Goldberg, M. K. Chun, I. N. Duling, and T. F. Carruthers

Appl. Phys. Lett. 56, 2071 (1990); http://dx.doi.org/10.1063/1.102975 (3 pages) | Cited 8 times

Full Text: | Download PDF

Show Abstract
A monolithic KNbO3 resonant cavity was used to generate 455 nm radiation by sum frequency mixing of a 1064 nm Nd:YAG laser with resonantly enhanced 795 nm emission of a diffraction‐limited externally injection‐locked GaAlAs broad‐stripe laser diode. Blue output of 154 mW was measured with 4.5 W of 1064 nm and 240 mW of 795 nm radiation in quasi‐cw operation.
Show PACS
42.60.Fc Modulation, tuning, and mode locking
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Laser properties of new organic nonlinear optical crystals chalcone derivatives

Yasuo Kitaoka, Takatomo Sasaki, Sadao Nakai, Atsushi Yokotani, Yoshitaka Goto, and Masaharu Nakayama

Appl. Phys. Lett. 56, 2074 (1990); http://dx.doi.org/10.1063/1.102976 (3 pages) | Cited 10 times

Full Text: | Download PDF

Show Abstract
A large single crystal (18×40×15 mm3) of a new nonlinear optical material ‘‘chalcone derivative’’ has been grown by an evaporation method. This crystal was relatively easy to grow to a large size and was chemically stable. The cutoff wavelength was 430 nm. The calculated phase matching angles for the second‐harmonic generation (SHG) of Nd:YAG lasers agreed with the experimental data. Effective nonlinear optical coefficients deff of type I and type II for SHG have been measured to be 3.5 pm/V for type I and 5.7 pm/V for type II.
Show PACS
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.-a Optical materials

Stimulated emission from a CdTe/HgCdTe separate confinement heterostructure grown by molecular beam epitaxy

K. K. Mahavadi, J. Bleuse, S. Sivananthan, and J. P. Faurie

Appl. Phys. Lett. 56, 2077 (1990); http://dx.doi.org/10.1063/1.102977 (3 pages) | Cited 6 times

Full Text: | Download PDF

Show Abstract
We present the results of low‐temperature photoluminescence and stimulated emission experiments performed on a CdTe/Hg0.45Cd0.55Te/Hg0.67Cd0.33Te multiquantum well separate confinement heterostructure grown by molecular beam epitaxy. The photoluminescence results suggest that because of the growth conditions, there is a strong interdiffusion in the multiquantum well region. Pulsed stimulated emission was observed from this structure up to 77 K.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
78.45.+h Stimulated emission
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Two‐wavelength optical switching in a GaAs multiple quantum well directional coupler

M. Cada, B. P. Keyworth, J. M. Glinski, C. Rolland, A. J. SpringThorpe, C. J. Miner, and K. O. Hill

Appl. Phys. Lett. 56, 2080 (1990); http://dx.doi.org/10.1063/1.102978 (3 pages) | Cited 1 time

Full Text: | Download PDF

Show Abstract
Preliminary experimental results are reported on two‐wavelength switching in a GaAs‐based multiple quantum well planar directional coupler. It is verified that a novel design of the multiple quantum well (MQW) coupling region leads to a wavelength multiplexing/demultiplexing/switching operation. It is shown that control of such a function can be exercised by either the wavelength of operation or by an applied electrical voltage through exciton resonance effects in the MQW layer. The layer structure exhibits two exciton‐resonance peaks at which wavelength‐selective switching can be achieved.
Show PACS
42.79.Gn Optical waveguides and couplers
78.20.Jq Electro-optical effects
42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks

Carrier recombination rate in GaAs‐AlGaAs single quantum well lasers under high levels of excitation

P. Wang, K. K. Lee, G. Yao, Y. C. Chen, and R. G. Waters

Appl. Phys. Lett. 56, 2083 (1990); http://dx.doi.org/10.1063/1.102979 (3 pages) | Cited 7 times

Full Text: | Download PDF

Show Abstract
The carrier recombination rate in GaAs‐AlGaAs single quantum well layers is investigated using a small‐signal technique for carrier densities from 1017 to 1019/cm3. For carrier densities up to mid 1018/cm3, the inverse of the differential carrier lifetime, 1/τd, increases linearly with the carrier density. The differential rate, however, saturates at higher carrier densities and remains nearly constant for carrier densities higher than 1019/cm3. The deviation from the bulk recombination behavior is due to a portion of the injected carriers populating the semicontinuum states where the rate for the radiative transition is much smaller. The experimental data indicate that the runaway increase of threshold current with decreasing cavity length commonly observed in the short‐cavity lasers is mainly due to the loss of carrier confinement at high carrier densities rather than due to fast carrier‐depleting processes, such as Auger recombination.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
78.60.Fi Electroluminescence
78.45.+h Stimulated emission

Effect of the vibration‐translation transfer rate on laser‐induced frequency chirp in a long‐pulse CO2 laser

H. P. Chou, B. Willman, K. Leung, G. Theophanis, and V. Hasson

Appl. Phys. Lett. 56, 2086 (1990); http://dx.doi.org/10.1063/1.102980 (3 pages) | Cited 2 times

Full Text: | Download PDF

Show Abstract
A frequency sweeping (chirping) mechanism governed by the lasing gas pressure and composition has been observed in a long‐pulse TE CO2 laser for the first time. The mechanism was detected in heterodyned data obtained from photomixing the pulsed laser output with a cw local oscillator. A theory has been developed which links this chirp‐governing mechanism to the vibration‐translation (V‐T) transfer rate from the lower laser level to the ground state. This new theory extends the existing theories on chirp in pulsed CO2 lasers into the long‐pulse regime.
Show PACS
42.60.Fc Modulation, tuning, and mode locking
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.55.Lt Gas lasers including excimer and metal-vapor lasers

Phase‐coupled two‐dimensional AlxGa1−xAs‐GaAs vertical‐cavity surface‐emitting laser array

D. G. Deppe, J. P. van der Ziel, Naresh Chand, G. J. Zydzik, and S. N. G. Chu

Appl. Phys. Lett. 56, 2089 (1990); http://dx.doi.org/10.1063/1.102981 (3 pages) | Cited 24 times

Full Text: | Download PDF

Show Abstract
Data are presented demonstrating the optically coupled operation of a 3×3 two‐dimensional array of AlxGa1−xAs‐GaAs vertical‐cavity surface‐emitting lasers. Room‐temperature threshold current for the array is 90 mA, with the device geometry allowing for light emission from the epitaxial side of the device.
Show PACS
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
85.60.Jb Light-emitting devices
85.30.Kk Junction diodes

Integrated optic front end for polarization diversity reception

Yosi Shani, Charles H. Henry, Rodney C. Kistler, Rudolph F. Kazarinov, and Kenneth J. Orlowsky

Appl. Phys. Lett. 56, 2092 (1990); http://dx.doi.org/10.1063/1.102982 (2 pages) | Cited 3 times

Full Text: | Download PDF

Show Abstract
An integrated optic circuit on silicon, which can be used in balanced polarization diversity detection, is demonstrated. The device consists of a 3 dB coupler and two polarization splitters. It has excess losses of 1.8 and 3.0 dB for TM and TE polarizations, respectively, and around −22 dB rejection of the unwanted polarizations at each output.
Show PACS
42.82.-m Integrated optics
42.79.Gn Optical waveguides and couplers
42.79.Ci Filters, zone plates, and polarizers

Diffusivity of gold in amorphous silicon measured by the artificial multilayer technique

E. Nygren, B. Park, L. M. Goldman, and F. Spaepen

Appl. Phys. Lett. 56, 2094 (1990); http://dx.doi.org/10.1063/1.102983 (3 pages) | Cited 16 times

Full Text: | Download PDF

Show Abstract
Artificial multilayers of amorphous Si and amorphous Si containing 0.7 at. % Au, with repeat lengths between 44 and 48A, were fabricated by ion beam sputtering. The change, with annealing time in the intensity of the first‐order x‐ray diffraction peak resulting from the composition modulation, is used to determine the diffusivity of Au in amorphous Si. Diffusion lengths on the order of an interatomic distance have been measured. The diffusivities over the temperature range 200–260 °C have an Arrhenius‐type temperature dependence with an activation enthalpy of about 1.3 eV, and are in agreement with the extrapolation of published higher temperature data.
Show PACS
66.30.J- Diffusion of impurities
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Raman study of de‐relaxation and defects in amorphous silicon induced by MeV ion beams

S. Roorda, J. M. Poate, D. C. Jacobson, B. S. Dennis, S. Dierker, and W. C. Sinke

Appl. Phys. Lett. 56, 2097 (1990); http://dx.doi.org/10.1063/1.102984 (3 pages) | Cited 18 times

Full Text: | Download PDF

Show Abstract
Raman spectroscopy is used as a probe of the state of amorphous Si (a‐Si) and damaged crystalline Si. MeV ion beams have been used to irradiate structurally relaxed a‐Si. When the density of Si atoms displaced by nuclear collisions exceeds 5%, the a‐Si is ‘‘de‐relaxed’’, and thus returns to its as‐implanted state. This behavior is an indication that point defect complexes exist in a‐Si and play an important role in the process of structural relaxation.
Show PACS
61.80.Jh Ion radiation effects
78.30.Hv Other nonmetallic inorganics
61.72.uf Ge and Si
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Optical‐beam‐deflection atomic force microscopy: The NaCl (001) surface

Gerhard Meyer and Nabil M. Amer

Appl. Phys. Lett. 56, 2100 (1990); http://dx.doi.org/10.1063/1.102985 (2 pages) | Cited 123 times

Full Text: | Download PDF

Show Abstract
We have imaged, in ultrahigh vacuum, the (001) surface of NaCl using an optical‐beam‐deflectin force microscope operating in the short‐range repulsive regime. The design and performance characteristics of the microscope are given, and the observed atomic corrugations are compared with those deduced from He‐atom scattering experiments.
Show PACS
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
68.35.B- Structure of clean surfaces (and surface reconstruction)

Exponential thermal emission transients from DX centers in heavily Si‐doped GaAs

E. Calleja, P. M. Mooney, T. N. Theis, and S. L. Wright

Appl. Phys. Lett. 56, 2102 (1990); http://dx.doi.org/10.1063/1.102986 (3 pages) | Cited 10 times

Full Text: | Download PDF

Show Abstract
The kinetics for the thermal emission of electrons from DX levels are shown to be exponential in heavily Si‐doped GaAs. Isothermal voltage transients, obtained at constant capacitance, show a perfect exponential behavior. In contrast, a clear deviation from a single exponential function is observed when the transients are recorded at constant voltage, due to the nonuniform doping profile in these structures. The exponential emission kinetics seen in GaAs support the proposal that nonexponential emission kinetics observed at constant capacitance in AlxGa1−xAs are due to different emission rates for DX levels having different local atomic configurations in the alloy.
Show PACS
71.55.Eq III-V semiconductors
73.61.Ey III-V semiconductors

High structural quality epi/oxide boundaries of selective epitaxy grown by SiH4/H2 chemical vapor deposition using growth‐sputter cycles

Tri‐Rung Yew and Rafael Reif

Appl. Phys. Lett. 56, 2105 (1990); http://dx.doi.org/10.1063/1.103232 (3 pages) | Cited 5 times

Full Text: | Download PDF

Show Abstract
This letter presents results of high structural quality epi/oxide boundaries of selective epitaxy grown on (100) oxide patterned Si wafers by ultralow pressure chemical vapor deposition from SiH4 /H2 at 800 °C using growth‐sputter cycles. The epitaxial films were characterized by cross‐sectional transmission electron microscopy and Nomarski optical microscope. About 2.1 μm silicon epitaxy was grown on the exposed silicon windows with about 0.27 μm lateral epitaxial growth over the oxide near {011} epi/oxide sidewalls. Almost no lateral epitaxial overgrowth was observed near {010} sidewalls. The epi/oxide boundary and the epitaxy grown over the oxide were found to be of high structural quality and defect‐free.
Show PACS
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Photoemission studies of Si surface oxidation using synchrotron radiation

M. Nakazawa and H. Sekiyama

Appl. Phys. Lett. 56, 2108 (1990); http://dx.doi.org/10.1063/1.102987 (3 pages) | Cited 8 times

Full Text: | Download PDF

Show Abstract
The electronic states of Si(111), (110), and (100) surfaces in the early oxidation stages are examined using high‐resolution photoelectron spectroscopy (ΔE<0.3 eV) with synchrotron radiation. The experimental results reveal stronger intensities of Si3+ and Si4+ oxide components for the Si(111) surface oxidation than for the Si(110) and (100) surface oxidations. Additionally, the depth distribution of intermediary components (SiOx: 0<x≤2) obtained from the tunability of synchrotron radiation shows that the Si3+ and Si4+ oxidation states form at the first and second outermost layers of the Si(111) surface. Features of the oxidation process are also discussed.
Show PACS
73.20.At Surface states, band structure, electron density of states
73.20.Hb Impurity and defect levels; energy states of adsorbed species
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

E′ centers and nitrogen‐related defects in SiO2 films

J. H. Stathis, J. Chapple‐Sokol, E. Tierney, and J. Batey

Appl. Phys. Lett. 56, 2111 (1990); http://dx.doi.org/10.1063/1.103233 (3 pages) | Cited 11 times

Full Text: | Download PDF

Show Abstract
We have observed an electron paramagnetic resonance signal corresponding to a neutral fourfold coordinated nitrogen in plasma‐enhanced chemical vapor deposited SiO2 films fabricated under certain conditions. The same films contain E′ centers (positive oxygen vacancies) in an equal quantity. Our data support a model in which these two paramagnetic centers are created simultaneously by an electron transfer, starting from a positive fourfold nitrogen and a neutral oxygen vacancy. This model allows an earlier observation of an apparently neutral E′ variant to be interpreted as a normal positive E′ plus a nitrogen center to conserve charge.
Show PACS
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.61.Ng Insulators
76.30.Mi Color centers and other defects

Transmission spectra of substrate‐free ZnTe‐ZnSe superlattices

H. Yang, A. Ishida, and H. Fujiyasu

Appl. Phys. Lett. 56, 2114 (1990); http://dx.doi.org/10.1063/1.102988 (3 pages) | Cited 4 times

Full Text: | Download PDF

Show Abstract
Transmission spectra of ZnTe‐ZnSe strained‐layer superlattices grown on GaAs (001) have been measured for the first time and step‐like optical‐absorption spectra between conduction and valence subbands have been observed. The GaAs substrates with a narrower band gap than the superlattices were partially removed by a chemical etching method. For the ZnTe‐ZnSe superlattices with a type II band structure, the transmission spectra provide a powerful tool for determining the effective band gap and band offset, because the spatial indirect transition of separately confined electrons and holes is very weak and therefore difficult to observe in photoluminescence measurements. The absorption thresholds observed in the transmission spectra agree very well with the exciton emissions that appeared in photoluminescence data.
Show PACS
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
81.65.-b Surface treatments

Ion beam induced epitaxial crystallization of NiSi2

M. C. Ridgway, R. G. Elliman, and J. S. Williams

Appl. Phys. Lett. 56, 2117 (1990); http://dx.doi.org/10.1063/1.102989 (3 pages) | Cited 2 times

Full Text: | Download PDF

Show Abstract
Ion beam induced epitaxial crystallization of amorphous NiSi2 is reported. Epitaxial NiSi2 layers on (111) Si substrates were implanted at ∼−196 °C with low‐energy Si ions to form an amorphous surface layer. The recrystallization of amorphous NiSi2 was induced at 13–58 °C by irradiating with high‐energy Si or Ne ions. Recrystallization proceeded in a layer‐by‐layer manner from the original amorphous/crystalline interface with an activation energy of 0.26±0.07 eV.
Show PACS
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
61.80.Jh Ion radiation effects
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
85.40.Hp Lithography, masks and pattern transfer

Dielectric breakdown in thin Si oxynitride films produced by rapid thermal processing

N. Novkovski, M. Dutoit, and J. Solo de Zaldivar

Appl. Phys. Lett. 56, 2120 (1990); http://dx.doi.org/10.1063/1.103234 (3 pages) | Cited 7 times

Full Text: | Download PDF

Show Abstract
Thin films of silicon oxide and oxynitride were prepared by rapid thermal processing. Under optimum conditions (e.g., nitridation at 1100 °C for 4 s followed by reoxidation at 1150 °C for 60 s), their electrical properties (charge trapping, low‐field leakage, and charge to breakdown) were significantly improved over those of the starting oxide. Values of Qbd as high as 260 C/cm2 for a positive current density of 200 mA/cm2 were obtained. Yet, the improvement was much smaller for negative than positive stress. This difference is ascribed to the asymmetrical role of nitridation on the prevention of interface trap generation at high fields and is consistent with models of the generation of interface traps described in the literature.
Show PACS
77.22.Jp Dielectric breakdown and space-charge effects
73.61.Ng Insulators
85.40.Hp Lithography, masks and pattern transfer
77.55.-g Dielectric thin films

Saturation of phase coherence length in GaAs/AlGaAs on‐facet quantum wires

Yoshino K. Fukai, Syoji Yamada, and Hayato Nakano

Appl. Phys. Lett. 56, 2123 (1990); http://dx.doi.org/10.1063/1.102990 (3 pages) | Cited 12 times

Full Text: | Download PDF

Show Abstract
Phase coherence length Lϕ of on‐facet quantum wires is determined at temperatures down to 50 mK by three methods: magnetoresistance, conductance fluctuation amplitude, and the conductance fluctuation correlation field. It is found that Lϕ saturates below about 0.4 K. This saturation is identified as due to spin‐orbit interaction, which has no temperature dependence. This result is supported by positive magnetoresistance under a weak magnetic field.
Show PACS
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.20.Fz Weak or Anderson localization

Epitaxial films of semiconducting FeSi2 on (001) silicon

John E. Mahan, Kent M. Geib, G. Y. Robinson, Robert G. Long, Yan Xinghua, Gang Bai, Marc‐A. Nicolet, and Menachem Nathan

Appl. Phys. Lett. 56, 2126 (1990); http://dx.doi.org/10.1063/1.103235 (3 pages) | Cited 85 times

Full Text: | Download PDF

Show Abstract
Epitaxial thin films of the semiconducting transition metal silicide, beta‐FeSi2, were grown on (001) silicon wafers. The observed matching face relationship is FeSi2(100)/Si(001), with the azimuthal orientation being FeSi2[010]‖‖Si〈110〉. This heteroepitaxial relationship has a common unit mesh of 59 Å2 area, with a mismatch of 2.1%. There is a strong tendency toward island formation within this heteroepitaxial system.
Show PACS
42.79.Gn Optical waveguides and couplers
78.20.Jq Electro-optical effects
42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks

Stable and shallow PdIn ohmic contacts to n‐GaAs

L. C. Wang, X. Z. Wang, S. S. Lau, T. Sands, W. K. Chan, and T. F. Kuech

Appl. Phys. Lett. 56, 2129 (1990); http://dx.doi.org/10.1063/1.102993 (3 pages) | Cited 35 times

Full Text: | Download PDF

Show Abstract
A thermally stable, low‐resistance PdIn ohmic contact to n‐GaAs has been developed based on the solid phase regrowth mechanism [T. Sands, E. D. Marshall, and L. C. Wang, J. Mater. Res. 3, 914 (1988)]. Rapid thermal annealing of a Pd‐In/Pd metallization induces a two‐stage reaction resulting in the formation of a uniform single‐phase film of PdIn, an intermetallic with a melting point greater than 1200 °C. A thin (∼5 nm) layer of average composition In0.4Ga0.6 As uniformly covers the interface between the PdIn layer and the GaAs substrate. Specific contact resistivities and contact resistances of ∼1×10−6 Ω cm2 and 0.14 Ω mm, respectively, were obtained for samples annealed at temperatures in the 600–650 °C range. The addition of a thin layer of Ge (2 nm) to the first Pd layer extends the optimum annealing temperature window down to 500 °C. Specific contact resistivities remained in the low 10−6 Ω cm2 range after subsequent annealing at 400 °C for over two days.
Show PACS
73.40.Cg Contact resistance, contact potential
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.40.Ns Metal-nonmetal contacts
Page 1 of 2 Pages Next Page | Jump to Page
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close