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28 May 1990

Volume 56, Issue 22, pp. 2163-2257

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High‐efficiency intracavity frequency doubling of Ti:Al2O3 lasers with KNbO3 crystals

L. S. Wu, H. Looser, and P. Günter

Appl. Phys. Lett. 56, 2163 (1990); http://dx.doi.org/10.1063/1.102956 (3 pages) | Cited 7 times

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A tunable coherent blue light source with a tuning range of 430–470 nm has been built. Tunable blue radiation was obtained by intracavity frequency doubling of a Ti:Al2O3 laser in KNbO3 crystals. The titanium sapphire laser was operated in a pulsed mode pumped by the second harmonic of a Q‐switched Nd:YAG laser. An infrared to blue conversion of 45% and a total conversion efficiency (532 nm to tunable blue) of 2% were reached.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.By Design of specific laser systems

Novel spectral response of a coupled quantum well photodiode

Yasunori Tokuda, Kyozo Kanamoto, and Noriaki Tsukada

Appl. Phys. Lett. 56, 2166 (1990); http://dx.doi.org/10.1063/1.103191 (3 pages) | Cited 4 times

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Novel hysteretic spectral response of a coupled quantum well p‐i‐n photodiode was demonstrated by combining a self‐electro‐optic effect with interwell coupling effects on the optical absorption. The phenomena may be sueful for new optical detection, in which high sensitivity is obtained for a monochromatic optical signal within a restricted wavelength range which is controllable by the bias voltage.
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42.65.Pc Optical bistability, multistability, and switching, including local field effects
78.66.-w Optical properties of specific thin films
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
78.20.Jq Electro-optical effects

‘‘Mushroom’’ double‐channel double‐heterostructure lead chalcogenide lasers made by chemical etching

K.‐H. Schlereth, H. Böttner, and M. Tacke

Appl. Phys. Lett. 56, 2169 (1990); http://dx.doi.org/10.1063/1.102957 (3 pages) | Cited 6 times

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Double‐channel double‐heterostructure (DCDH) lead chalcogenide lasers were made using a chemical etchant. The etching rate depends strongly on the europium content of the ternary compound PbxEu1−xSe. This technique allows the development of selective etching processes for advanced laser design. The DCDH lasers show low‐threshold current densities of 60 A/cm2 at 20 K and suppression of lateral modes.
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42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
42.79.Gn Optical waveguides and couplers

Room‐temperature photopumped operation of an InGaAs‐InP vertical cavity surface‐emitting laser

D. G. Deppe, S. Singh, R. D. Dupuis, N. D. Gerrard, G. J. Zydzik, J. P. van der Ziel, C. A. Green, and C. J. Pinzone

Appl. Phys. Lett. 56, 2172 (1990); http://dx.doi.org/10.1063/1.102958 (3 pages) | Cited 10 times

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Data are presented demonstrating the room‐temperature operation of an InP‐InGaAs vertical cavity surface‐emitting laser. The laser structure has an active region consisting of a 2‐μm‐thick bulk InGaAs layer and has an emission wavelength of 1.65 μm. Both the front and rear mirrors consist of quarter‐wave stacks of four pairs of electron beam evaporated layers of Si and SiO2 which have been optimized for maximum reflectivity. The structures are characterized in the transmission mode using a pump beam from a Nd:YAG laser at 1.06 μm.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
78.45.+h Stimulated emission
78.55.Cr III-V semiconductors

Long‐lived dry‐etched AlGaAs/GaAs ridge waveguide laser diodes

C. M. Harding and R. G. Waters

Appl. Phys. Lett. 56, 2175 (1990); http://dx.doi.org/10.1063/1.102959 (2 pages) | Cited 2 times

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Chemically assisted ion beam etching has been utilized to fabricate ridge waveguide GaAs/AlGaAs lasers which are as reliable, if not more so, than their oxide stripe counterparts. Results on 60‐ and 5‐μm‐wide ridge waveguide lasers with 600 μm cavity lengths as compared to oxide stripe lasers with the same configuration are reviewed and multikilohour lifetimes are demonstrated.
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42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes
85.40.Qx Microcircuit quality, noise, performance, and failure analysis
61.80.Jh Ion radiation effects

Bulk semiconductor saturable absorber for a NaCl color center laser

C. E. Soccolich, M. N. Islam, M. G. Young, and B. I. Miller

Appl. Phys. Lett. 56, 2177 (1990); http://dx.doi.org/10.1063/1.102960 (3 pages) | Cited 3 times

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Using bulk InGaAsP as a saturable absorber we have passively mode locked a NaCl color center laser to produce transform‐limited, pedestal‐free pulses near 1.6 μm as short as 197 fs with up to 4.2 kW peak power. Our results simplify the saturable absorber material requirements and prove that excitons are not required for generating subpicosecond pulses. By comparing a dozen samples we find that a minimum band‐edge absorbance of 40% is required to generate subpicosecond pulses, although details of the band edge are not critical. In addition, we find stable mode locking always occurs on the long‐wavelength side of the laser gain peak.
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42.60.Fc Modulation, tuning, and mode locking
42.70.-a Optical materials
42.55.Rz Doped-insulator lasers and other solid state lasers
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Use of trilevel resists for high‐resolution soft‐x‐ray projection lithography

D. W. Berreman, J. E. Bjorkholm, M. Becker, L. Eichner, R. R. Freeman, T. E. Jewell, W. M. Mansfield, A. A. MacDowell, M. L. O’Malley, E. L. Raab, W. T. Silfvast, L. H. Szeto, D. M. Tennant, W. K. Waskiewicz, D. L. White, et al.

Appl. Phys. Lett. 56, 2180 (1990); http://dx.doi.org/10.1063/1.102961 (3 pages) | Cited 7 times

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A projection optical system with 20:1 reduction has been used with radiation at ∼36 nm to evaluate resists for use in soft‐x‐ray projection lithography. The high absorption of soft x rays by carbon‐based polymers requires that an imaging resist layer be very thin. The sensitivities and contrasts of several such resists are reported. By incorporating a thin imaging layer into a trilayer resist scheme, we have exposed, developed, and transferred features as small as 0.2 μm into silicon.
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85.40.Hp Lithography, masks and pattern transfer
07.85.-m X- and γ-ray instruments

Analysis of thin rod flexural acoustic wave gravimetric sensors

C. K. Jen, J. E. B. Oliveira, J. C. H. Yu, J. D. Dai, and J. F. Bussiere

Appl. Phys. Lett. 56, 2183 (1990); http://dx.doi.org/10.1063/1.102962 (3 pages) | Cited 4 times

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An analysis of thin rod flexural acoustic wave gravimetric sensors is presented. The diameter of the thin rod is much less than a wavelength. The lowest order flexural acoustics mode, F11, is of interest. For small added masses, the calculated mass sensitivity is −1/(2ρa), where ρ is the density and a is the radius of the thin rod. Measurements of velocity dispersion of the F11 mode in 21‐μm‐diam gold wires are shown to agree well with the theoretical calculation. Devices based on thin rods are shown to potentially have the same advantages as plate‐mode gravimetric sensors.
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43.40.Cw Vibrations of strings, rods, and beams
43.35.Cg Ultrasonic velocity, dispersion, scattering, diffraction, and attenuation in solids; elastic constants
43.35.Yb Ultrasonic instrumentation and measurement techniques

Selective dry etching of InGaAs and InP over AlInAs in CH4/H2/SF6

S. J. Pearton and W. S. Hobson

Appl. Phys. Lett. 56, 2186 (1990); http://dx.doi.org/10.1063/1.102963 (3 pages) | Cited 11 times

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The addition of SF6 to CH4/H2 discharges is shown to produce a significant increase in the selectivity for dry etching of both InGaAs and InP over AlInAs. The selectivity is a strong function of the dc bias on the sample during the reactive ion etching, with equirate removal of InGaAs and AlInAs for biases above 300 V. For lower bias values, the etch stop mechanism is related to the formation of Al‐F and In‐F species on the AlInAs surface, as evidenced by x‐ray photoelectron spectroscopy. The use of SF6 allows independent variation of the ratio of F to the other reactive species, in comparison to the use of fixed ratio gases such as C2H4F2 or CH3F.
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81.65.-b Surface treatments
81.40.Rs Electrical and magnetic properties related to treatment conditions
72.80.Ey III-V and II-VI semiconductors
73.61.Ey III-V semiconductors

Synchrotron radiation‐excited etching of SiO2 with SF6 at 143 and 251 Å using undulator radiation

K. Shobatake, H. Ohashi, K. Fukui, A. Hiraya, N. Hayasaka, H. Okano, A. Yoshida, and H. Kume

Appl. Phys. Lett. 56, 2189 (1990); http://dx.doi.org/10.1063/1.103241 (3 pages) | Cited 25 times

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Photoexcited etching of SiO2 surface with SF6 gas is studied using undulator radiation at 143 and 251 Å as an extreme ultraviolet light source. The SF6 pressure and the wavelength dependences of the etch rates have been measured for SiO2 in the pressure region between 0.016 and 0.50 Torr. We find that, at these wavelengths, the etch rate is proportional to the intensity of the light absorbed by the surface species, most probably SiO2 in the pressure region studied.
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81.05.Kf Glasses (including metallic glasses)
81.65.-b Surface treatments
61.80.Lj Atom and molecule irradiation effects
78.66.-w Optical properties of specific thin films

Deactivation of the photoionization excitation mechanism of rare‐earth intraion emission in ZnS

K. Światek and M. Godlewski

Appl. Phys. Lett. 56, 2192 (1990); http://dx.doi.org/10.1063/1.102964 (3 pages) | Cited 10 times

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A new, very efficient excitation mechanism of the rare‐earth (RE) intraion emission was observed recently. This is a process in which the RE ion undergoes ionization and the RE intraion emission is induced when the ionized carrier is recaptured by the RE. The capture process proceeds via an intermediate state due to RE bound exciton (BE), from which the energy is transferred to the RE excited state. In this letter we discuss mechanisms which limit the efficiency of this excitation channel. The first is the thermal dissociation of the RE BE, which reduces the efficiency of the energy transfer thus quenches the RE intraion emission. It is also indicated that an efficient energy transfer from RE Be to iron Fe2+ centers competes with the transfer of the BE energy to RE core states. Our results mean that the practical utilization of the above excitation mechanism of emission in the RE‐activated ZnS devices may be hampered by the common contamination of this material with iron.
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78.55.Et II-VI semiconductors
76.30.Kg Rare-earth ions and impurities
71.35.-y Excitons and related phenomena

Fermi edge singularity in the luminescence of modulation‐doped Ga0.47In0.53As/Al0.48In0.52As single heterojunctions

Yong‐Hang Zhang, De‐Sheng Jiang, R. Cingolani, and K. Ploog

Appl. Phys. Lett. 56, 2195 (1990); http://dx.doi.org/10.1063/1.102965 (3 pages) | Cited 22 times

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Modulation‐doped Ga0.47In0.53As/Al0.48In0.52As single heterojunctions have been investigated by means of optical spectroscopy and magnetotransport measurements. Strong radiative recombination of the two‐dimensional electron gas (2DEG) with photogenerated holes has been observed. The recombination is not k conserving, since the holes are weakly localized at the heterointerface opposite to the 2DEG region. At low temperature strong Fermi edge enhancement occurs in the luminescence of single heterojunctions with, for example, a dense electron sheet concentration of 2.5×1012 cm−2. The results show clear evidence for the influence of carrier concentration and temperature on the Fermi edge singularity. The linewidths of the luminescence spectra agree well with those estimated from the electron sheet carrier concentrations, which were determined from the Shubnikov–de Haas oscillations, using an ideal 2DEG model.
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78.55.Cr III-V semiconductors
71.35.-y Excitons and related phenomena
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Influence of off‐oriented substrates on the crystallinity of (Ca,Sr)F2 layers grown on Si (100)

Tetsuroh Minemura, Junko Asano, Kazuo Tsutsui, and Seijiro Furukawa

Appl. Phys. Lett. 56, 2198 (1990); http://dx.doi.org/10.1063/1.103242 (3 pages)

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Off‐oriented Si (100) substrates had considerable influence on the crystallinity of a (Ca,Sr)F2 layer, which is lattice matched with GaAs and grown on the substrates by molecular beam epitaxy. The (Ca,Sr)F2 layer grown on the Si (100) substrate, off oriented toward 〈011〉, was not a single crystal but had a columnar structure. The (Ca,Sr)F2 layer grown on the exact Si (100) susbstrate, however, was a single crystal in which the crystallinity was quite good with a minimum channeling yield (χmin ) of the mixed fluoride layer in the Rutherford backscattering spectra of about 0.1. To obtain such good crystallinity, the temperature range was limited to around 500 °C. The influence of off‐oriented substrates was opposite that found in GaAs/Si (100) structures.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
61.85.+p Channeling phenomena (blocking, energy loss, etc.)
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Surface structure of (100) GaP grown by gas source molecular beam epitaxy

J. N. Baillargeon, K. Y. Cheng, and K. C. Hsieh

Appl. Phys. Lett. 56, 2201 (1990); http://dx.doi.org/10.1063/1.102966 (3 pages) | Cited 11 times

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In situ reflection high‐energy electron diffraction analysis was used to investigate the surface structure of the GaP epitaxial layers grown on (100) GaP substrates by gas source molecular beam epitaxy as a function of substrate temperature and V/III flux ratio. It was found that for GaP, column V and column III stabilized surfaces corresponded to the (2×4) and (4×2) reconstruction pattern, respectively, which is characteristic of most all III‐V binary compound semiconductors. In the transition region, however, the surface exhibited a ((19)1/2 ×4 reconstruction pattern. At substrate temperatures below 660 °C and 685 °C for P‐ and Ga‐stabilized surfaces, respectively, the surface structure was insensitive to temperature. Beyond 660 and 690 °C, the surface structure exhibited an exponential flux dependence with increasing substrate temperature.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology
68.35.B- Structure of clean surfaces (and surface reconstruction)

Epitaxial Al Schottky contacts formed on (111) GaAs

Kazuyoshi Ueno, Takayoshi Yoshida, and Kazuyuki Hirose

Appl. Phys. Lett. 56, 2204 (1990); http://dx.doi.org/10.1063/1.102967 (3 pages) | Cited 4 times

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Epitaxial (111)A1/(111)GaAs Schottky contacts are formed using molecular beam epitaxy. The epitaxial relationship is determined by transmission electron microscopy. The interface is found to be abrupt and of an atomic order. Schottky barrier heights are measured by current‐voltage and capacitance‐voltage methods. The Schottky barrier height for a (111) surface is found to be stable under 450 °C annealing in a N2 atmosphere.
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73.30.+y Surface double layers, Schottky barriers, and work functions
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination

Model describing phosphorus diffusion gettering of transition elements in silicon

W. Schröter and R. Kühnapfel

Appl. Phys. Lett. 56, 2207 (1990); http://dx.doi.org/10.1063/1.102968 (3 pages) | Cited 20 times

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We give experimental evidence for cobalt in silicon that each of the processes defining phosphorus diffusion gettering (PDG), i.e., (1) P doping by in‐diffusion and (2) SiO2 growth, achieves moderate gettering, while the cooperation of the two processes leads to strong gettering of cobalt. In a tentative model, gettering is attributed to the coupling between local currents of silicon self‐interstitials, which are generated during PDG, and 3d impurities on substitutional sites.
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66.30.J- Diffusion of impurities
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.jd Vacancies
61.72.jj Interstitials

Subpicosecond cooling of photoexcited hot carriers studied by one‐beam excite‐and‐probe Raman scattering

Dai‐sik Kim and Peter Y. Yu

Appl. Phys. Lett. 56, 2210 (1990); http://dx.doi.org/10.1063/1.102969 (3 pages) | Cited 11 times

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A technique using a single picosecond laser beam to excite and probe photoexcited hot electron and hole plasma by inelastic light scattering is proposed. The cooling rate of the hot electrons is determined by varying the pulse width of the laser beam. The technique is illustrated by measuring the subpicosecond cooling of hot carriers in GaAs and InGaAs. The advantages and limitations of the technique are discussed.
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78.47.-p Spectroscopy of solid state dynamics
78.30.Fs III-V and II-VI semiconductors

Direct observation of picosecond spin relaxation of excitons in GaAs/AlGaAs quantum wells using spin‐dependent optical nonlinearity

Atsushi Tackeuchi, Shunichi Muto, Tsuguo Inata, and Toshio Fujii

Appl. Phys. Lett. 56, 2213 (1990); http://dx.doi.org/10.1063/1.102970 (3 pages) | Cited 72 times

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We have directly observed spin relaxation of excitons in the picosecond region using time‐resolved polarization absorption measurements. With the help of spin‐dependent optical nonlinearity of excitonic absorption, we obtained a fast decay of spin‐up carriers and a fast accumulation of spin‐down carriers with a spin relaxation time of 32 ps for a GaAs/Al0.51Ga0.49As multiple quantum well at room temperature with a time resolution of 1 ps.
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71.35.-y Excitons and related phenomena
78.47.-p Spectroscopy of solid state dynamics
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Conductance statistics of small‐area ohmic contacts on GaAs

N. Blanc, P. Guéret, P. Buchmann, K. Dätwyler, and P. Vettiger

Appl. Phys. Lett. 56, 2216 (1990); http://dx.doi.org/10.1063/1.102971 (3 pages) | Cited 6 times

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The conductance distributions of very small‐area alloyed ohmic contacts on n+‐GaAs have been studied as a function of lateral contact size d, with d ranging from 4 μm down to 0.3 μm. The data are fairly well represented by a Poisson distribution, which takes into account the granularity of the alloyed contacts, as previously reported. We deduce an average distance of dc ≂0.41 μm between conducting grains and a dead zone of ld ≂600 Å due to dry etching of the GaAs.
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73.40.Cg Contact resistance, contact potential
73.40.Sx Metal-semiconductor-metal structures
85.30.Hi Surface barrier, boundary, and point contact devices

Chemical beam epitaxial growth of InAs using trimethylindium and arsine

T. H. Chiu and J. A. Ditzenberger

Appl. Phys. Lett. 56, 2219 (1990); http://dx.doi.org/10.1063/1.102972 (3 pages) | Cited 8 times

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We report the growth study of InAs by chemical beam epitaxy. Growth conditions for high quality epilayer has been determined from in situ reflection high‐energy electron diffraction measurement, surface morphology, photoluminescence, and Hall measurement. The growth rate measurement shows that the pyrolysis characteristics of trimethylindium are qualitatively similar to that of triethylgallium which have previously been simulated by a surface chemical kinetics model. The boundary condition between In‐ and As‐stabilized surface in the previously unexplored temperature range of 520–560 °C gives an activation energy of 3.1 eV for the As desorption from the InAs surface.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Deep levels in edge‐defined, film‐fed grown silicon solar cells

Y. Yang, S. Mil’shtein, J. T. Borenstein, and J. I. Hanoka

Appl. Phys. Lett. 56, 2222 (1990); http://dx.doi.org/10.1063/1.102950 (3 pages) | Cited 1 time

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Deep level transient spectroscopoy (DLTS) was used for studies of defects in edge‐defined film‐fed grown solar cells. For the first time, specific electronic traps were observed and identified in this polycrystalline silicon material. The DLTS spectra were taken in the extended temperature range 80–450 K, and a number of deep centers were detected. Several dislocation‐ and impurity‐related states were identified at low concentrations in the processed solar cells. Variations in crystal growth conditions were shown to produce a novel high‐temperature peak which exhibited a strong correlation to the bulk lifetime of the solar cell.
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71.55.Ht Other nonmetals
72.40.+w Photoconduction and photovoltaic effects
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Dislocation generation of GaAs on Si in the cooling stage

Masami Tachikawa and Hidefumi Mori

Appl. Phys. Lett. 56, 2225 (1990); http://dx.doi.org/10.1063/1.102951 (3 pages) | Cited 48 times

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In situ measurements are carried out for the etch pit density (EPD) of GaAs on Si at growth temperature using a newly developed HCl‐GaCL vapor phase etching method. The EPD obtained is 4×104 cm−2 at growth temperature. However, after the temperature cools down to room temperature, the EPD is 8×106 cm−2 using molten KOH etching. GaP on Si is also carried out, and almost the same result is obtained; that around 107 cm−2 dislocations are generated in the cooling stage. This is the first evidence that thermal stress in the cooling stage determines the quality of GaAs and GaP heteroepitaxial layers on Si.
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61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Optically induced electromagnetic radiation from semiconductor surfaces

X.‐C. Zhang, J. T. Darrow, B. B. Hu, D. H. Auston, M. T. Schmidt, P. Tham, and E. S. Yang

Appl. Phys. Lett. 56, 2228 (1990); http://dx.doi.org/10.1063/1.102952 (3 pages) | Cited 199 times

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Ultrafast electromagnetic radiation induced by a femtosecond laser beam from a semiconductor provides determination of the impurity doping concentration, carrier mobility, sign, and strength of the depletion field near the semiconductor surface.
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42.65.Re Ultrafast processes; optical pulse generation and pulse compression
78.47.-p Spectroscopy of solid state dynamics
72.40.+w Photoconduction and photovoltaic effects

In situ epitaxial growth of the GdBa2Cu3O7 superconducting thin films on (100) ZrO2 by magnetron sputtering

Huai‐ren Yi, Rui‐lan Wang, Hong‐cheng Li, Yaun Chen, Bo Yin, Xi‐sheng Ron, and Lin Li

Appl. Phys. Lett. 56, 2231 (1990); http://dx.doi.org/10.1063/1.103243 (3 pages) | Cited 11 times

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High‐temperature superconductor GdBa2Cu3O7 thin films were epitaxially grown in situ on (100) oriented ytrrium‐stabilized zirconia single‐crystal substrates by dc magnetron sputtering using a single planar target. All samples prepared in continual 12 runs have zero‐resistance transition temperature Tc0 more than 90 K and a transition width 1–2 K. The best films have a Tc0 of 92.5 K, a transition width of 0.7 K, and a critical current density of 1.4×106 A/cm2 at 77 K. The reproducibility is very good. X‐ray diffraction spectra analysis in different geometries showed epitaxial growth with the c axis normal to the film surface.
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74.78.-w Superconducting films and low-dimensional structures
74.70.-b Superconducting materials other than cuprates
81.15.Cd Deposition by sputtering
74.25.Sv Critical currents

Planar array of superheated superconductors: An improved superheated superconducting granule detector

M. Le Gros, A. Da Silva, B. G. Turrell, A. Kotlicki, and A. K. Drukier

Appl. Phys. Lett. 56, 2234 (1990); http://dx.doi.org/10.1063/1.102953 (3 pages) | Cited 8 times

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We have invented a new superheated superconducting granule detector which is a prime candidate for sensing dark matter and which could prove very useful for other applications. The sensor element is a planar array of spherical granules for which the spread in transition temperatures is nearly an order of magnitude smaller than that for a colloidal device. The detecting efficiency for low‐energy deposition is thereby significantly increased. Preliminary results are described.
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85.25.Qc Superconducting surface acoustic wave devices and other superconducting devices
29.40.-n Radiation detectors
98.80.Es Observational cosmology (including Hubble constant, distance scale, cosmological constant, early Universe, etc)
95.85.Pw γ-ray
95.85.Ry Neutrino, muon, pion, and other elementary particles; cosmic rays
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