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28 May 1990

Volume 56, Issue 22, pp. 2163-2257

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High Tc Y‐Ba‐Cu‐O thin films prepared by in situ low‐temperature codeposition of Y, BaF2, and Cu on α‐Al2O3 substrates

Š. Chromik, F. Hanic, R. Adam, M. Jergel, J. Liday, and Š. Beňačka

Appl. Phys. Lett. 56, 2237 (1990); http://dx.doi.org/10.1063/1.103244 (3 pages) | Cited 8 times

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Thin Y‐Ba‐CU‐O films were prepared in‐situ by low‐temperature codeposition on Al2O3 substrates. The temperatures during preparation did not exceed 600 °C. As a source of Ba the BaF2 was used. The zero resistance Tc values were higher than 84 K, Jc =4×104 A/cm2 at 4.2 K/OT. The Auger electron spectroscopy analysis has shown almost a homogeneous distribution of the film components throughout the film thickness. X‐ray diffraction revealed the presence of unoriented 1‐2‐3 phase besides BaF2 and CuO and, one undefined phase, which might be oxyfluoride compound.
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74.70.-b Superconducting materials other than cuprates
74.78.-w Superconducting films and low-dimensional structures
74.25.Sv Critical currents
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Josephson weak links in thin films of YBa2Cu3O7−x induced by electrical pulses

D. Robbes, A. H. Miklich, J. J. Kingston, Ph. Lerch, F. C. Wellstood, and John Clarke

Appl. Phys. Lett. 56, 2240 (1990); http://dx.doi.org/10.1063/1.103245 (3 pages) | Cited 7 times

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A method is described for fabricating superconducting weak links in thin films of YBa2Cu3O7−x grown in situ by laser deposition. Carefully controlled electrical pulses applied to patterned bridges at 77 K are shown to reduce the critical current from initial values of typically 10 mA to values as low as 20 μA. The current‐voltage characteristics of the Josephson weak links so formed exhibit constant‐voltage current steps that oscillate in amplitude as the applied microwave power is increased, implying that the current‐phase relation is periodic but not necessarily sinusoidal.
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85.25.Cp Josephson devices
74.70.-b Superconducting materials other than cuprates
74.78.-w Superconducting films and low-dimensional structures

Epitaxy of Y‐Ba‐Cu‐O thin films grown on single‐crystal MgO

R. Ramesh, D. Hwang, T. S. Ravi, A. Inam, J. B. Barner, L. Nazar, S. W. Chan, C. Y. Chen, B. Dutta, T. Venkatesan, and X. D. Wu

Appl. Phys. Lett. 56, 2243 (1990); http://dx.doi.org/10.1063/1.102932 (3 pages) | Cited 53 times

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The epitaxy of a thin‐film Y‐Ba‐Cu‐O (YBCO) superconductor deposited on a single‐crystal [001] MgO substrate was examined by transmission electron microscopy. The large lattice mismatch (8–10%) in the basal plane of YBCO and MgO is accommodated mainly by the formation of a polycrystalline, mosaic structure. The grain boundaries correspond to unique crystallographic interfaces, determined by the crystal symmetry of the substrate and the thin film.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
74.70.-b Superconducting materials other than cuprates
74.78.-w Superconducting films and low-dimensional structures
74.25.Sv Critical currents
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition

Surface preparation for the heteroepitactic growth of ceramic thin films

M. Grant Norton, Scott R. Summerfelt, and C. Barry Carter

Appl. Phys. Lett. 56, 2246 (1990); http://dx.doi.org/10.1063/1.103246 (3 pages) | Cited 48 times

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The morphology, composition, and crystallographic orientation of the substrate influence the nucleation and growth of deposited thin films. A method for the preparation of controlled, characteristic surfaces is reported. The surfaces are suitable for the heteroepitactic growth of thin films. When used in the formation of electron‐transparent thin foils, the substrates can be used to investigate the very early stages of film growth using transmission electron microscopy. The substrate preparation involves the cleaning and subsequent annealing to generate a surface consisting of a series of steps. The step terraces are formed on the energetically stable surface, and controlled nucleation and growth of films at step edges is found. The substrate materials prepared using this technique include (001) MgO, (001) SrTiO3, and (001) LaAlO3.
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07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.55.-a Thin film structure and morphology
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.65.-b Surface treatments

Direct overwrite without initialization in a bilayer magneto‐optical disk

Mathew D. Watson and Pierre Meystre

Appl. Phys. Lett. 56, 2249 (1990); http://dx.doi.org/10.1063/1.102933 (3 pages)

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We propose and analyze a bilayer direct overwrite scheme that does not require an initialization bias field. This is achieved by using permanent domains in a reference layer to help stabilize bits in a memory layer on writing, and to destabilize the memory layer bits on erasure.
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85.70.Sq Magnetooptical devices
78.20.Ls Magneto-optical effects
42.79.Vb Optical storage systems, optical disks

Enhanced coercivities in die‐upset Nd‐Fe‐B magnets with diffusion‐alloyed additives (Zn, Cu, and Ni)

C. D. Fuerst and E. G. Brewer

Appl. Phys. Lett. 56, 2252 (1990); http://dx.doi.org/10.1063/1.102934 (3 pages) | Cited 14 times

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Rapidly solidified Nd‐Fe‐B ribbons were crushed and mixed with a fine powder (10–100μm) of a pure element before hot working into fully dense anisotropic magnets. At the high temperatures and pressures required for densification some additives diffused throughout the ribbon matrix and presumably into the neodymium‐rich phase surrounding the Nd2Fe14B grains. In small concentrations (0.5–0.8 wt%), zinc, copper, and nickel additions enhanced the coercivities of die‐upset magnets by 100%, 77%, and 53%, respectively. Additives which did not diffuse thoroughly, such as manganese, had no measurable effect on the coercivities.
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75.50.Bb Fe and its alloys
75.50.Vv High coercivity materials
81.05.Bx Metals, semimetals, and alloys
81.40.Rs Electrical and magnetic properties related to treatment conditions

Fluorinated thin SiO2 grown by rapid thermal processing

W. Ting, G. Q. Lo, T. Y. Hsieh, D. L. Kwong, John Kuehne, and Charles W. Magee

Appl. Phys. Lett. 56, 2255 (1990); http://dx.doi.org/10.1063/1.103190 (3 pages) | Cited 3 times

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High quality ultrathin fluorinated gate oxides have been grown for the first time by rapid thermal processing in diluted NF3 and O2. The chemical and electrical properties of fluorinated oxides have been studied as a function of growth conditions.
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81.05.Kf Glasses (including metallic glasses)
81.65.-b Surface treatments
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
85.30.Tv Field effect devices
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