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4 Jun 1990

Volume 56, Issue 23, pp. 2267-2356

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Lasing characteristics of a continuous‐wave operated folded‐cavity surface‐emitting laser

Takeshi Takamori, Larry A. Coldren, and James L. Merz

Appl. Phys. Lett. 56, 2267 (1990); http://dx.doi.org/10.1063/1.102935 (3 pages) | Cited 3 times

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Room‐temperature continuous‐wave operation of a folded‐cavity surface‐emitting AlGaAs/GaAs laser with transverse junction stripe structure, which has a dry‐etched 45° internal mirror, is demonstrated for the first time. A threshold current of 42 mA and a differential external quantum efficiency of 19% per facet were obtained. A single far‐field lobe and single longitudinal mode emission were also observed.
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42.55.Px Semiconductor lasers; laser diodes
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Picosecond blue light pulse generation by frequency doubling of a gain‐switched GaAlAs laser diode with saturable absorbers

Jun Ohya, Genji Tohmon, Kazuhisa Yamamoto, Tetsuo Taniuchi, and Masahiro Kume

Appl. Phys. Lett. 56, 2270 (1990); http://dx.doi.org/10.1063/1.102936 (3 pages) | Cited 8 times

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Picosecond blue light pulse generation by frequency doubling of a gain‐switched GaAlAs laser diode in a proton‐exchanged MgO:LiNbO3 waveguide is reported. High‐peak fundamental pulse power of 1.23 W is obtained by employing a laser diode with saturable absorbers. Blue light pulse of 7.88 mW maximum peak power and 28.7 ps pulse width is generated in the form of Cherenkov radiation.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.55.Px Semiconductor lasers; laser diodes
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.60.Fc Modulation, tuning, and mode locking

Gain characteristics of erbium‐doped single‐mode fiber amplifiers operated at liquid‐nitrogen temperature

Makoto Shimizu, Makoto Yamada, Masaharu Horiguchi, and Etsuji Sugita

Appl. Phys. Lett. 56, 2273 (1990); http://dx.doi.org/10.1063/1.102937 (3 pages) | Cited 2 times

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Gain characteristics of Er‐doped silica single‐mode fiber amplifiers are investigated at liquid‐nitrogen temperature (LNT). Liquid‐crystal‐polyester coated Er‐doped fibers are used to prevent an increase in microbending loss of LNT. The maximum net gain and the transmission loss for a 1.535 μm wavelength are increased at LNT. This increase is explained by a three‐level rate equation taking into account the loss increase. On the other hand, gain characteristics and the transmission loss at 1.552 μm suggest the change in the amplification mechanism at LNT from a three‐level system to a quasi‐four‐level system.
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78.20.-e Optical properties of bulk materials and thin films
07.60.-j Optical instruments and equipment
42.79.-e Optical elements, devices, and systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.65.-k Nonlinear optics

Spatial switching, instabilities, and chaos in a three‐waveguide nonlinear directional coupler

N. Finlayson and G. I. Stegeman

Appl. Phys. Lett. 56, 2276 (1990); http://dx.doi.org/10.1063/1.102938 (3 pages) | Cited 40 times

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A numerical study is conducted of a three‐waveguide nonlinear directional coupler. Markedly sharper transmittance characteristics than the well‐known two‐waveguide coupler are obtained at the expense of a higher switching power. Over longer distances transitions from quasi‐periodic to chaotic behavior and back take place as the power is varied.
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42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.82.-m Integrated optics
42.79.Gn Optical waveguides and couplers
42.65.Sf Dynamics of nonlinear optical systems; optical instabilities, optical chaos and complexity, and optical spatio-temporal dynamics

Femtosecond dynamics of semiconductor‐doped glasses using a new source of incoherent light

L. H. Acioli, A. S. L. Gomes, J. Miguel Hickmann, and Cid B. de Araujo

Appl. Phys. Lett. 56, 2279 (1990); http://dx.doi.org/10.1063/1.102939 (3 pages) | Cited 17 times

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The characterization and application of a new source of incoherent light for studies of ultrafast processes in condensed matter is described. It is based on the stimulated Raman effect in monomode optical fibers and has a coherence time of ∼80 fs. As an application, we have measured the homogeneous dephasing time of CdSxSe1−x‐doped glasses and obtained a value of 14±4 fs for above‐gap excitation at room temperature.
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78.30.Fs III-V and II-VI semiconductors
42.70.Ce Glasses, quartz
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering

Quantum‐confined field‐effect wavelength tuning in a three‐terminal double quantum well laser

F. Y. Huang

Appl. Phys. Lett. 56, 2282 (1990); http://dx.doi.org/10.1063/1.102940 (3 pages) | Cited 2 times

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A three‐terminal quantum‐confined field‐effect double quantum well laser device is proposed. The wavelength shift scheme caused by the field‐induced change in the energy levels is demonstrated. With the current injected and the electric field applied to different wells, wide range wavelength shift can be achieved by changing the applied field.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Optical bistability in nonlocally nonlinear periodic structures

Gaetano Assanto and George I. Stegeman

Appl. Phys. Lett. 56, 2285 (1990); http://dx.doi.org/10.1063/1.102941 (3 pages) | Cited 10 times

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The transmission and reflection of electromagnetic guided waves by a periodic structure with a delocalized intensity‐dependent nonlinearity was studied using a semianalytical approach. We show that such a nonlocal nonlinear distributed feedback grating can exhibit bistable and switching behaviors depending upon the input intensity and the detuning.
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42.65.Pc Optical bistability, multistability, and switching, including local field effects
63.10.+a General theory
42.82.-m Integrated optics
42.79.Gn Optical waveguides and couplers

Alexandrite laser pumped by semiconductor lasers

Richard Scheps, Bernard M. Gately, Joseph F. Myers, Jerzy S. Krasinski, and Donald F. Heller

Appl. Phys. Lett. 56, 2288 (1990); http://dx.doi.org/10.1063/1.102942 (3 pages) | Cited 19 times

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We report the first operation of a direct diode‐pumped tunable chromium‐doped solid‐state laser. A small alexandrite (Cr:BeAl2O4) crystal was longitudinally pumped by two visible laser diodes. The threshold pump power was 12 mW using the R1 line at 680.4 nm for the pump transition, and the slope efficiency was 25%. The measured laser output bandwidth was 2.1 nm.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
78.45.+h Stimulated emission

Generation of 41 mW of blue radiation by frequency doubling of a GaAlAs diode laser

W. J. Kozlovsky, W. Lenth, E. E. Latta, A. Moser, and G. L. Bona

Appl. Phys. Lett. 56, 2291 (1990); http://dx.doi.org/10.1063/1.102943 (2 pages) | Cited 56 times

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A monolithic ring resonator of KNbO3 was used for efficient frequency doubling of a 856 nm GaAlAs diode laser. A special electronic servo technique was devised to lock the diode laser frequency to the KNbO3 cavity so that stable generation of blue output was obtained. With 105 mW of incident near‐infrared power, 41 mW of 428 nm radiation were produced. The conversion efficiency from electrical input power into the diode laser to blue output was ∼10%.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Fc Modulation, tuning, and mode locking

Linewidth enhancement factor in strained quantum well lasers

N. K. Dutta, J. Wynn, D. L. Sivco, and A. Y. Cho

Appl. Phys. Lett. 56, 2293 (1990); http://dx.doi.org/10.1063/1.102944 (2 pages) | Cited 15 times

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The linewidth enhancement factor α in an In0.2Ga0.8As/GaAs strained‐layer multiple quantum well (MQW) laser has been determined from the spontaneous emission spectra below threshold. The measured α at the lasing wavelength is found to be 1.0 compared to a value of 5 typically observed for InGaAsP/InP double‐heterostructure lasers. The smaller α shows that single wavelength strained MQW lasers may have smaller chirp width under modulation and also smaller cw linewidth.
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42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Phase accurate optical probing of surface acoustic wave devices

A. Ginter and G. Sölkner

Appl. Phys. Lett. 56, 2295 (1990); http://dx.doi.org/10.1063/1.102945 (3 pages) | Cited 2 times

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In this letter, we present a method which detects the angle deflection of a laser beam due to the mechanical undulation of the substrate surface. This method allows us to measure amplitude and phase of a surface acoustic wave with high spatial resolution. Because of the use of a picosecond laser source the method has a bandwidth of 10 GHz limited only by the jitter of the driving electronics and the spot size of the laser beam. In addition we report first measurements at frequencies up to 1 GHz.
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43.35.Sx Acoustooptical effects, optoacoustics, acoustical visualization, acoustical microscopy, and acoustical holography
43.38.Zp Acoustooptic and photoacoustic transducers
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
42.87.-d Optical testing techniques

Mechanism for diamond growth from methyl radicals

Stephen J. Harris

Appl. Phys. Lett. 56, 2298 (1990); http://dx.doi.org/10.1063/1.102946 (3 pages) | Cited 239 times

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We use a 9‐carbon model compound to describe a proposed mechanism for homoepitaxial growth of diamond from methyl radicals on a hydrogenated, electrically neutral (100) surface. We estimate enthalpy and entropy changes for each step in the mechanism using group additivity methods, taking into account the types of bonding and steric repulsions found on the (100) surface. Rate constants are estimated based on analogous reactions for hydrocarbon molecules, while gas phase species concentrations are taken from our previous measurements. The rate equations are then integrated. The method, which contains no adjustable parameters or phenomenological constants, predicts a growth rate of between 0.06 and 0.6 μm/h, depending on the local details of the surface. Uncertainties related to the use of a model compound rather than diamond are discussed. The analysis demonstrates that the proposed mechanism is feasible.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
68.55.-a Thin film structure and morphology
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Sn incorporation into InP grown by molecular beam epitaxy: A secondary‐ion mass spectrometry study

M. B. Panish, R. A. Hamm, and L. C. Hopkins

Appl. Phys. Lett. 56, 2301 (1990); http://dx.doi.org/10.1063/1.102947 (3 pages) | Cited 7 times

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Secondary‐ion mass spectrometric analysis of InP/Ga0.47In0.53As heterostructures incorporating Sn‐doped regions has been used to study the distribution of Sn in InP during molecular beam epitaxy. Depending upon the flux conditions, up to a monolayer of Sn can accumulate on the growing InP surface, and the surface accumulation mediates the incorporation of Sn into the growing layer. The surface to bulk distribution ratio of Sn per monolayer grown is less than 10−3. Once the surface has been saturated all additional Sn in the beam is incorporated and concentrations exceeding 1020 cm−3 can be achieved.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.35.Fx Diffusion; interface formation
68.35.Dv Composition, segregation; defects and impurities

Defect reduction in strained InxGa1−xAs via growth on GaAs (100) substrates patterned to submicron dimensions

S. Guha, A. Madhukar, and Li Chen

Appl. Phys. Lett. 56, 2304 (1990); http://dx.doi.org/10.1063/1.102948 (3 pages) | Cited 25 times

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The misfit dislocation (MD) behavior of InxGa1−xAs (x≤0.15) grown via molecular beam epitaxy on GaAs(100) substrates containing parallel mesas of ultrasmall widths (0.6–1.3 μm) is examined via cross‐sectional transmission electron microscope studies. A virtual absence of MDs running perpendicular to the mesa widths is found even though the film thicknesses are significantly larger than the so‐called critical thickness for growth on nonpatterned substrates. In the nonpatterned regions of the substrate the mean separation of such MDs is ∼1500 Å and ∼940 Å for x=0.11 and x=0.15, respectively. The defect reduction observed is discussed in light of intrinsic effects relating to growth kinetics and strain relief at mesa edges and/or reduced dislocation multiplication occurring on the mesas.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)

Permeable base transistor fabrication by selective epitaxial growth of silicon on a submicrometer WSi2 grid

P. A. Badoz, D. Bensahel, L. Guérin, C. Puissant, and J. L. Regolini

Appl. Phys. Lett. 56, 2307 (1990); http://dx.doi.org/10.1063/1.102949 (3 pages) | Cited 1 time

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We report the epitaxial growth of silicon on a tungsten disilicide grating using a rapid thermal processing, low‐pressure chemical vapor deposition reactor. Results indicate that silicon grows selectively on the patterned Si/WSi2 structure, irrespective of the grating periodicity (from 0.6 μm up to several tens of microns). The epitaxial growth of silicon is shown to proceed two dimensionally on the Si surface and laterally over the WSi2 lines without any reaction with the underlying WSi2 grid. Preliminary electrical measurements of the Si/WSi2/Si overgrown permeable base transistor thus fabricated are presented, showing current densities Jmax of up to 6000 A/cm2 and transconductances gm of 5 mS/mm.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.40.Vz Semiconductor-metal-semiconductor structures
73.30.+y Surface double layers, Schottky barriers, and work functions

Microstructure isolation testing using a scanning electron microscope

S. S. Mahant‐Shetti, T. J. Aton, R. J. Gale, and M. H. Bennett‐Lilley

Appl. Phys. Lett. 56, 2310 (1990); http://dx.doi.org/10.1063/1.102927 (3 pages) | Cited 2 times

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A new form of testing is described that is suitable for verifying isolation in many forms of microstructures. Excess charge is deposited on the microstructures by a scanning electron microscope (SEM) beam. On elements of the microstructures that are isolated, this excess charge induces a voltage contrast that is detected at the same time by the same beam. Isolation to approximately 2×1011 Ω can be verified. The method is simple and fast, requiring only a standard SEM and simple test structures.
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07.78.+s Electron, positron, and ion microscopes; electron diffractometers
85.40.Hp Lithography, masks and pattern transfer
79.20.Hx Electron impact: secondary emission
85.40.Ls Metallization, contacts, interconnects; device isolation

Light‐induced defect creation in amorphous silicon: Single carrier versus excitonic mechanisms

Martin Stutzmann

Appl. Phys. Lett. 56, 2313 (1990); http://dx.doi.org/10.1063/1.102928 (3 pages) | Cited 12 times

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A quantitative explanation is derived for the light‐induced degradation of compensated amorphous silicon. The analysis suggests that donor levels in compensated hydrogenated amorphous silicon (a‐Si:H) lead to an efficient spatial separation of trapped electrons and holes, thereby preventing excitonic tail‐to‐tail recombination thought to be responsible for metastable defect creation during illumination. This confirms the original defect creation model which has recently been challenged by single carrier mechanisms invoking dispersive hydrogen motion as the rate‐limiting step.
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73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
76.30.Da Ions and impurities: general
78.66.Jg Amorphous semiconductors; glasses

Total dose radiation hardness of diamond‐based silicon‐on‐insulator structures

M. I. Landstrass and D. M. Fleetwood

Appl. Phys. Lett. 56, 2316 (1990); http://dx.doi.org/10.1063/1.102929 (3 pages) | Cited 16 times

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Total dose radiation hardness measurements were performed on silicon‐on‐insulator (SOI) test structures where the insulator is chemical vapor deposited (CVD) diamond. These measurements represent a first look at the fundamental radiation response of low‐pressure CVD synthetic diamond materials for SOI applications. Silicon/diamond metal‐insulator‐semiconductor (MIS) capacitors were subjected to both cobalt‐60 and 10 keV x‐ray irradiation up to doses of 1×107 rad (SiO2) while under positive, negative, and zero bias conditions. The diamond insulators used in these devices were found to be free from extensive hole or electron trapping. This behavior is consistent with the high electron and hole mobility of the polycrystalline diamond insulator.
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61.80.Cb X-ray effects
81.40.Pq Friction, lubrication, and wear
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Material‐enhanced spatially dependent etch rate of SiO2 in CF4 reactive ion etching

G. A. Porkolab and E. D. Wolf

Appl. Phys. Lett. 56, 2319 (1990); http://dx.doi.org/10.1063/1.102930 (3 pages) | Cited 1 time

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We report on the spatially dependent enhanced etch rate of SiO2 in a CF4 planar reactive ion etcher due to the presence of the compounds GaAs or InP, or the single elements Ti, V, Nb, Ta, Cr, Mo, W, Ni, Pd, Pt, Cu, Ag, Au, Al, Ga, In, or Ge. The etch rate enhancement is maximum immediately adjacent to the source of the material and decreases nonlinearly with increasing distance away from the source of the material. Of the materials studied, the largest local etch rate increase was due to the element Ni (65% increase), followed closely by the elements In (57%) and Ga (43%) and the compounds InP (55%) and GaAs (40%). The lateral range of the effect extends 5 to 30 mm away from the material depending on the element or compound. Material interaction, possibly a catalized reaction, with the CF4 plasma reactants and lateral transport to provide an increased local concentration of fluorine at the SiO2 surface is a preliminary suggestion for the observed etch rate increase.
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81.65.-b Surface treatments
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
42.82.-m Integrated optics
85.40.Hp Lithography, masks and pattern transfer

Patterned tungsten chemical vapor deposition on amorphous silicon by excimer laser modification of the native oxide

A. T. Howe, K. V. Reddy, D. L. Wuensch, J. T. Niccum, and G. W. Zajac

Appl. Phys. Lett. 56, 2322 (1990); http://dx.doi.org/10.1063/1.102931 (3 pages) | Cited 1 time

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We report a method of patterning tungsten on hydrogenated amorphous silicon by excimer laser modification of the native oxide, thereby inhibiting the deposition of tungsten on the exposed regions in a subsequent tungsten chemical vapor deposition step. The method demonstrates how intermediate fluence radiation (∼100 mJ/cm2), which does not damage masks, can be utilized for patterning.
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85.40.Hp Lithography, masks and pattern transfer
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.65.-b Surface treatments
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)

Anomalous capacitance‐voltage behavior due to dopant segregation and carrier trapping in As‐implanted polycrystalline silicon and silicided polycrystalline silicon gates

K. Park, S. Batra, J. Lin, S. Yoganathan, S. Banerjee, J. Lee, S. Sun, J. Yeargain, and G. Lux

Appl. Phys. Lett. 56, 2325 (1990); http://dx.doi.org/10.1063/1.102908 (3 pages) | Cited 3 times

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This letter discusses the anomalous capacitance‐voltage characteristics of As‐implanted polycrystalline silicon and amorphous Si gate metal‐oxide‐semiconductor (MOS) structures fabricated with and without a TiSi2 layer. The effects of gate bias and process parameters such as annealing temperature, process details of silicide formation, and polycrystalline silicon grain microstructure on the capacitance‐voltage (C‐V) characteristics have also been studied. It is shown that insufficient As redistribution at 800 °C, coupled with carrier trapping at polycrystalline silicon grain boundaries and dopant segregation in TiSi2, causes depletion effects in the polycrystalline silicon gate and in turn, the anomalous C‐V behavior. The depletion tends to increase the ‘‘effective’’ gate oxide thickness and thereby degrade MOS device performance. Higher temperature anneals (≥900 °C) are sufficient to achieve degenerate doping in the polycrystalline silicon gates and avoid the depletion effects.
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85.30.Tv Field effect devices
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Picosecond hole dynamics in GaAs grown on silicon

Kai Shum, Y. Takiguchi, J. M. Mohaidat, Feng Liu, R. R. Alfano, and H. Morkoç

Appl. Phys. Lett. 56, 2328 (1990); http://dx.doi.org/10.1063/1.102909 (3 pages) | Cited 3 times

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Picosecond hole dynamics in GaAs grown on silicon substrate are reported for the first time using time‐ and energy‐resolved photoluminescence spectroscopy. The emission spectrum is attributed to transitions from electrons in donor (Si, 1016 cm−3) states to the internal stress separated heavy hole and light hole bands [(D°→hh), (D°→lh)]. The intraband thermalization process for heavy holes is observed to be faster than for light holes. The intervalence‐band thermalization time of holes is found to be about 11 ps. The hole cooling rate is measured to be six times smaller than expected based on hole scatterings with longitudinal optical phonons.
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73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
78.47.-p Spectroscopy of solid state dynamics

Current‐controlled negative differential conductivity in semi‐insulating GaAs

Z.‐M. Li, S. P. McAlister, W. G. McMullan, C. M. Hurd, and D. J. Day

Appl. Phys. Lett. 56, 2331 (1990); http://dx.doi.org/10.1063/1.102910 (2 pages) | Cited 4 times

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The leakage current in the semi‐insulating substrate of a GaAs device measured in a conventional voltage‐controlled experiment shows hysteresis. Experiments in constant‐current conditions show that this arises from an S‐type negative differential conductivity. These features are incompatible with the conventional trap‐fill‐limited model, and we outline an alternative explanation based on the impact ionization of multiple deep level traps.
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85.30.De Semiconductor-device characterization, design, and modeling
85.30.Tv Field effect devices
72.80.Ey III-V and II-VI semiconductors
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Low‐loss microstrip delay line in Tl2Ba2CaCu2O8

L. C. Bourne, R. B. Hammond, McD. Robinson, M. M. Eddy, W. L. Olson, and T. W. James

Appl. Phys. Lett. 56, 2333 (1990); http://dx.doi.org/10.1063/1.102911 (3 pages) | Cited 17 times

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We have fabricated and tested a 1 ns microstrip delay line using thin films of Tl2Ba2CaCu2O8. We determined the loss in the delay line by weakly coupling at the input and output and measuring the width of the fundamental resonance at 461 MHz. At 15 K, the loss was lower than that calculated for an equivalent cryogenic copper line by a factor of 300. Resonance peaks were observable up to 102.7 K. At 77 K and 3.29 GHz, the observed loss was lower than that calculated for an equivalent Cu line by a factor of 10. Power limiting due to film defects occurred at an effective power level in the line of −43 dBm at 15 K.
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74.78.-w Superconducting films and low-dimensional structures
41.20.Jb Electromagnetic wave propagation; radiowave propagation
85.25.Qc Superconducting surface acoustic wave devices and other superconducting devices
84.40.Az Waveguides, transmission lines, striplines

Superconducting thin‐film multiturn coils of YBa2Cu3O7−x

Frederick C. Wellstood, John J. Kingston, and John Clarke

Appl. Phys. Lett. 56, 2336 (1990); http://dx.doi.org/10.1063/1.103247 (3 pages) | Cited 20 times

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We describe a technique for fabricating superconducting thin‐film multiturn coils from the high‐temperature superconductor YBa2Cu3O7−x. We have built 10‐turn and 19‐turn square spiral coils, 1 mm on a side, that are suitable for coupling to a thin‐film dc superconducting quantum interference device. The coils are constructed with a three‐layer crossover technology using SrTiO3 as an insulator. Each layer is deposited in situ with a pulsed excimer laser, and is patterned with shadow masks or photoresist and an Ar ion mill. The best coil had a transition temperature of approximately 82 K, and a critical current at 77 K of 1.4 mA, corresponding to a critical current density of 2×104 A cm−2.
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85.25.Qc Superconducting surface acoustic wave devices and other superconducting devices
74.70.-b Superconducting materials other than cuprates
74.78.-w Superconducting films and low-dimensional structures
84.32.Hh Inductors and coils; wiring
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