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4 Jun 1990

Volume 56, Issue 23, pp. 2267-2356

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Electronic structure of Sb in BaPb1−xSbxO3 superconducting compounds

M. Eibschütz, W. M. Reiff, R. J. Cava, J. J. Krajewski, and W. F. Peck

Appl. Phys. Lett. 56, 2339 (1990); http://dx.doi.org/10.1063/1.103248 (3 pages) | Cited 9 times

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The Mössbauer effect of the 37.2 keV γ transition of 121Sb has been employed to study the electronic configuration of Sb ions in BaPb1−xSbxO3 superconducting materials. The isomer shift is constant as a function of Sb content and falls in the region correspoding to the Sb(V) valence state. The isomer shift of 7 mm/s is the lowest value yet observed for an Sb(V)O6 chromophore and indicates a high degree of covalency, corresponding to significant 5sm 5pn hybridization. The mixed valence state of an equal amount of Sb(III) and Sb(V) has not been observed.
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74.70.-b Superconducting materials other than cuprates
76.80.+y Mössbauer effect; other γ-ray spectroscopy
71.55.Ht Other nonmetals

Low‐temperature in situ formation of Y‐Ba‐Cu‐O high Tc superconducting thin films by plasma‐enhanced metalorganic chemical vapor deposition

J. Zhao, D. W. Noh, C. Chern, Y. Q. Li, P. Norris, B. Gallois, and B. Kear

Appl. Phys. Lett. 56, 2342 (1990); http://dx.doi.org/10.1063/1.103249 (3 pages) | Cited 31 times

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Highly textured, highly dense, superconducting YBa2Cu3O7−x thin films with mirror‐like surfaces have been prepared, in situ, at a reduced substrate temperature as low as 570 °C by a remote microwave plasma‐enhanced metalorganic chemical vapor deposition process (PE‐MOCVD). Nitrous oxide was used as the oxidizer gas. The as‐deposited films grown by PE‐MOCVD show attainment of zero resistance at 72 K. PE‐MOCVD was carried out in a commercial scale MOCVD reactor.
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74.78.-w Superconducting films and low-dimensional structures
74.70.-b Superconducting materials other than cuprates
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
74.25.Sv Critical currents
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition

Effect of energetic bombardment on the magnetic coercivity of sputtered Pt/Co thin‐film multilayers

P. F. Carcia, S. I. Shah, and W. B. Zeper

Appl. Phys. Lett. 56, 2345 (1990); http://dx.doi.org/10.1063/1.102912 (3 pages) | Cited 42 times

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Pt/Co multilayers are an attractive candidate for a magneto‐optical recording medium. However, films sputter deposited in Ar have coercivities too small (100–350 Oe) to be practical in recording. By sputter depositing multilayers in Kr or Xe instead of Ar, we achieved coercivities ∼1000 Oe, suitable for recording. We attribute the lower coercivity of Ar‐sputtered films to interfacial mixing of Pt and Co layers by energetic bombardment from Ar gas atoms that recoil from the Pt target.
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75.30.Gw Magnetic anisotropy
78.20.Ls Magneto-optical effects
85.70.Sq Magnetooptical devices
61.80.Lj Atom and molecule irradiation effects

Dynamic measurements of film thickness over local topography in spin coating

L. M. Manske, D. B. Graves, and W. G. Oldham

Appl. Phys. Lett. 56, 2348 (1990); http://dx.doi.org/10.1063/1.102913 (3 pages) | Cited 3 times

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A technique is presented for making real‐time, in situ measurements of film thickness profiles over local topography during spin coating. A laser is pulsed synchronously with the rotation of a spinning wafer to illuminate a microscope focused on a local feature being coated on the wafer. Interference fringes are captured photographically to allow observation of film thickness contours from initial spin‐up to the final dried film. With this method we can observe the influcence of flow direction and microscopic feature shape and orientation on film profiles during the spinning and drying processes in spin coating.
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81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
85.40.Hp Lithography, masks and pattern transfer
07.60.-j Optical instruments and equipment

Magnetically filtered low‐loss scanning electron microscopy

Oliver C. Wells, Francoise K. LeGoues, and Rodney T. Hodgson

Appl. Phys. Lett. 56, 2351 (1990); http://dx.doi.org/10.1063/1.102914 (3 pages) | Cited 4 times

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The resolution of the scanning electron microscope can be improved by mounting the sample in the high‐field region of a condenser‐objective lens. Low‐loss electrons (LLEs) are scattered from the sample with an energy loss of less than a few percent of the incident energy. In the past, LLEs have been collected with a retarding‐field energy filter. A way has been found to collect LLEs using a detector located within the magnetic field of the condenser‐objective lens which provides the required energy‐filtering action. This greatly simplifies the apparatus and makes it possible to obtain LLE images with less tilt of the specimen and with a higher beam energy than before.
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07.78.+s Electron, positron, and ion microscopes; electron diffractometers
41.75.Fr Electron and positron beams
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
FREE

Comment on ‘‘Performance limitations of GaAs/AlGaAs infrared superlattices’’ [Appl. Phys. Lett. 54, 2704 (1989)]

B. F. Levine

Appl. Phys. Lett. 56, 2354 (1990); http://dx.doi.org/10.1063/1.102915 (2 pages) | Cited 17 times

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Abstract Unavailable
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
72.40.+w Photoconduction and photovoltaic effects
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
85.60.Gz Photodetectors (including infrared and CCD detectors)
FREE

Response to ‘‘Comment on ‘Performance limitations of GaAs/AlGaAs infrared superlattices’ ’’ [Appl. Phys. Lett. 56, 2354 (1990)]

M. A. Kinch and A. Yariv

Appl. Phys. Lett. 56, 2355 (1990); http://dx.doi.org/10.1063/1.102916 (2 pages) | Cited 1 time

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Abstract Unavailable
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
72.40.+w Photoconduction and photovoltaic effects
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
85.60.Gz Photodetectors (including infrared and CCD detectors)
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