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25 Jun 1990

Volume 56, Issue 26, pp. 2599-2698

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High specific output energy operation of a vacuum ultraviolet molecular fluorine laser excited at 66 MW/cm3 by an electric discharge

Masayuki Kakehata, Etsu Hashimoto, Fumihiko Kannari, and Minoru Obara

Appl. Phys. Lett. 56, 2599 (1990); http://dx.doi.org/10.1063/1.102850 (3 pages) | Cited 18 times

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An output laser energy of 83 mJ, which corresponds to a specific output energy of 2.9 J/l, was obtained by exciting a 10 atm He/F2 gas mixture by an extremely intense electric discharge at a peak excitation rate of 66 MW/cm3. A fast rise of the voltage between the discharge electrodes prior to the discharge induction increases the breakdown voltage and, at the same time, improves the discharge stability resulting in an increase of the laser output and intrinsic efficiency.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
52.80.Yr Discharges for spectral sources (including inductively coupled plasma)

Large room‐temperature magneto‐optical Kerr effect in CuCr2Se4

H. Brändle, J. Schoenes, P. Wachter, F. Hulliger, and W. Reim

Appl. Phys. Lett. 56, 2602 (1990); http://dx.doi.org/10.1063/1.103263 (2 pages) | Cited 12 times

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The magneto‐optical polar Kerr effect has been measured on CuCr2Se4 single crystals between 0.55 and 5.0 eV. The single Kerr ellipticity ϵK reaches −1.19° at 0.96 eV which is (besides PtMnSb with θK=−1.27° at 1.72 eV) the highest value ever observed at room temperature. The figure of merit R1/2(θ2K + ϵ2K)1/2 has a maximum value of 0.84° at 0.88 eV which is as high as in PtMnSb (0.83° at 1.57 eV). This large magneto‐optical Kerr effect is due to the steep plasma edge observed in the reflectivity R. First experiments show that the photon energy at which the plasma edge occurs can be shifted by suitable substitutions in CuCr2Se4.
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78.20.Ls Magneto-optical effects
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.40.Ha Other nonmetallic inorganics

Spectral characteristics of an injection‐controlled XeF(C→A) excimer laser

C. B. Dane, S. Yamaguchi, Th. Hofmann, R. Sauerbrey, W. L. Wilson, and F. K. Tittel

Appl. Phys. Lett. 56, 2604 (1990); http://dx.doi.org/10.1063/1.102851 (3 pages) | Cited 3 times

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The spectral output characteristics of an injection‐controlled XeF(C→A) excimer laser pumped by a short pulse (10 ns), high current density (250 A/cm2) electron beam are reported. A tuning bandwidth of 50 nm full width half maximum, centered at 490 nm, with a peak specific energy density of 1.3 J/l was measured using an injection laser intensity of ∼2 MW/cm2. Continuously tuned output across the entire blue‐green region (450–530 nm) with an energy density exceeding 0.2 J/l was achieved. Injection beam spectral linewidths as narrow as 0.001 nm were shown to be preserved in the XeF(C→A) laser output.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Fc Modulation, tuning, and mode locking

Output saturation characteristics of erbium‐doped fiber amplifiers pumped at 975 nm

A. Lidgard, J. R. Simpson, and P. C. Becker

Appl. Phys. Lett. 56, 2607 (1990); http://dx.doi.org/10.1063/1.102852 (3 pages) | Cited 5 times

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We report the signal saturation behavior of an erbium‐doped fiber amplifier pumped at 975 nm. We have characterized the output saturation powers as a function of fiber length and observed that the output saturation powers peak at an optimum length close to the optimum length for small signal gain. The output saturation power is found to be higher at a signal wavelength of 1.555 μm than at 1.532 μm.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.81.Wg Other fiber-optical devices

Highly efficient and stable nonlinear optical polymers via chemical cross‐linking under electric field

D. Jungbauer, B. Reck, R. Twieg, D. Y. Yoon, C. G. Willson, and J. D. Swalen

Appl. Phys. Lett. 56, 2610 (1990); http://dx.doi.org/10.1063/1.102853 (3 pages) | Cited 71 times

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Extending the novel method of Eich et al. [J. Appl. Phys. 66, 3241 (1989)] to prepare highly stable second‐order nonlinear optical (NLO) polymers via chemical cross‐linking under electric field, we have obtained a new polymer exhibiting large and stable second‐order optical nonlinearities after relaxation at 80 °C. This was achieved by forming a network polymer from two NLO‐active monomers, bifunctional N,N‐(diglycidyl)‐4‐nitroaniline and trifunctional N‐(2‐aminophenyl)‐4‐nitroaniline. Here, every NLO moiety is connected to the network by a single covalent bond. After full cure under corona poling at 120 °C, the sample exhibited at ambient conditions d33≂50 pm/V and d31≂16 pm/V at 1064 nm fundamental wavelength, as estimated from the Maker fringe data. Upon heating to 80 °C, the nonlinearities decreased somewhat initially, but leveled off and remained stable at 80 °C. This stable sample gave d33≂42 pm/V and d31≂14 pm/V at ambient conditions. Furthermore, the linear electro‐optical coefficient of this sample, measured with a Mach–Zehnder interferometer, was r13≂6.5 pm/V at 530.9 nm. From this r13 coefficient one estimates d31≂11 pm/V at 1064 nm, in good agreement with the Maker fringe value.
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42.70.-a Optical materials
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.20.Jq Electro-optical effects

High‐frequency polarization self‐modulation and chaotic phenomena in external cavity semiconductor lasers

W. H. Loh, Y. Ozeki, and C. L. Tang

Appl. Phys. Lett. 56, 2613 (1990); http://dx.doi.org/10.1063/1.102854 (3 pages) | Cited 26 times

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Optical pulses with repetition rates up to several hundred MHz have been generated through a polarization self‐modulation effect in an external cavity semiconductor laser modified by the insertion of a quarter‐wave retardation plate. These pulses are generated without the need for any high‐speed electronics. At higher bias, period doubling and chaotic phenomena are also observed.
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42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Spatial distribution of CH3 and CH2 radicals in a methane rf discharge

H. Sugai, H. Kojima, A. Ishida, and H. Toyoda

Appl. Phys. Lett. 56, 2616 (1990); http://dx.doi.org/10.1063/1.103264 (3 pages) | Cited 49 times

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Spatial distributions of neutral radicals CH3 and CH2 in a capacitively coupled rf glow discharge of methane were measured by threshold ionization mass spectrometry. A strong asymmetry of the density profile was found for the CH2 radical in the high‐pressure (∼100 mTorr) discharge. In addition, comprehensive measurements of electron energy distribution, ionic composition, and radical sticking coefficient were made to use as inputs to theoretical modeling of radicals in the methane plasma. The model predictions agree substantially with the measured radical distributions.
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52.80.Hc Glow; corona
52.25.Jm Ionization of plasmas
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)

Tracer impurity diffusion in amorphous NixZr1−x alloys

H.‐M. Wu and R. S. Averback

Appl. Phys. Lett. 56, 2619 (1990); http://dx.doi.org/10.1063/1.102855 (3 pages) | Cited 2 times

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Impurity tracer diffusion coefficients for Co and Hf were measured in a series of amorphous NixZr1−x alloys at various temperatures for 0.3<x<0.7. The diffusion coefficients for Co, an impurity with small atomic radius were, depending on alloy composition and temperature, two to four orders of magnitude larger than those for Hf, an impurity with large atomic radius. Whereas the Hf tracer diffusion coefficients are independent of alloy composition, those of Co decrease strongly with increasing Ni concentration. These results suggest that the diffusion mechanisms for atoms with small or large atomic radii are different in amorphous Ni‐Zr alloys.
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66.30.J- Diffusion of impurities
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
61.43.Fs Glasses
61.43.-j Disordered solids
61.44.Br Quasicrystals

Ion‐induced annealing and amorphization of isolated damage clusters in Si

Anna Battaglia, Francesco Priolo, Emanuele Rimini, and Giuseppe Ferla

Appl. Phys. Lett. 56, 2622 (1990); http://dx.doi.org/10.1063/1.102856 (3 pages) | Cited 13 times

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The interaction between high‐energy ion irradiation and pre‐existing damage clusters dispersed in single‐crystal Si is discussed. Silicon substrates were predamaged by low‐dose 150 keV Au ions. Post‐irradiation by 600 keV Kr2+ ions resulted in either damage annealing or damage accumulation, depending on the substrate temperature. The transition temperature between these two different regimes is 420 K. These data are discussed and compared with the ion beam induced epitaxy and amorphization of continuous surface amorphous layers.
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61.72.Bb Theories and models of crystal defects
61.80.Jh Ion radiation effects
64.70.K- Solid-solid transitions

Void formation in pulsed laser induced via/contact hole filling

Paul F. Marella, David B. Tuckerman, and R. Fabian Pease

Appl. Phys. Lett. 56, 2625 (1990); http://dx.doi.org/10.1063/1.102857 (3 pages) | Cited 4 times

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Metal (Au, Cu, and Al‐1% Cu) layers sputter deposited over vias and contact holes of varying diameter and aspect ratio are melted and planarized by irradiation with either a 600 ns pulse duration flashlamp‐pumped dye laser or a 35 ns pulse duration excimer laser. High aspect ratio (≳1) vias and contact holes yield metal profiles that suffer from void formation during the laser‐induced flow. This void formation is explained by considering surface tension forces that, in high aspect ratio cases, act to close off the top of a hole without filling it.
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85.40.Hp Lithography, masks and pattern transfer
85.40.Ls Metallization, contacts, interconnects; device isolation
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)

Interdiffusion measurements in asymmetrically strained SiGe/Si superlattices

S. M. Prokes and K. L. Wang

Appl. Phys. Lett. 56, 2628 (1990); http://dx.doi.org/10.1063/1.102858 (3 pages) | Cited 34 times

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Interdiffusion measurements are reported for Si0.65Ge0.35/Si asymmetrically strained superlattices grown by molecular beam epitaxy at 530 °C. The temperature‐dependent interdiffusion coefficient obtained from x‐ray diffraction can be described by D=675 exp(−4.4 eV/kT)cm2/s in the temperature range 700–880 °C. Initially, an enhanced diffusion was observed, especially near the superlattice surface. This is attributed to the presence of nonequilibrium defects. Bulk interdiffusion measurements were made only after isoconfigurational conditions were attained. The diffusion analysis first formulated by J. W. Cahn [Acta Metall. 9, 795 (1961)] is applied here, and the relative importance of both gradient energy effects and coherency strain effects will be discussed.
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66.30.Dn Theory of diffusion and ionic conduction in solids
68.35.Fx Diffusion; interface formation
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Single‐crystalline aluminum layer buried in α‐Al2O3

Masataka Ohkubo, Noritomo Suzuki, and Tatsumi Hioki

Appl. Phys. Lett. 56, 2631 (1990); http://dx.doi.org/10.1063/1.103265 (2 pages) | Cited 7 times

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Single‐crystalline aluminum layer buried in α‐Al2O3 has been synthesized by high‐dose ion implantation of aluminum ions at an elevated temperature. It has been revealed by a high‐resolution transmission electron microscope that the aluminum layer has interfaces which are remarkably smooth and abrupt within a few atomic layers. This observation is comparable to that in mesotaxy of silicides buried in silicon.
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68.55.-a Thin film structure and morphology
61.72.up Other materials

Back‐contacted emitter GaAs solar cells

G. L. Araújo, A. Martí, and C. Algora

Appl. Phys. Lett. 56, 2633 (1990); http://dx.doi.org/10.1063/1.102859 (3 pages) | Cited 5 times

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A new device structure to improve the performance of concentrator GaAs solar cells is described and the first experimental results are reported. The reason for such an improvement relies on a drastic reduction of the shadowing and series resistance losses based on the possibility of back contacting the emitter region of the solar cell. The experimental results obtained with devices of these types, with a simplified structure, fabricated by liquid phase epitaxy, demonstrate the feasibility and correct operation of the proposed back contact of the emitter of the cells.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase

Thermoelectric effect spectroscopy of deep levels—application to semi‐insulating GaAs

B. Šantić and U. V. Desnica

Appl. Phys. Lett. 56, 2636 (1990); http://dx.doi.org/10.1063/1.102860 (3 pages) | Cited 32 times

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A new method, thermoelectric effect spectroscopy, is proposed for the analysis of deep levels in semi‐insulating materials. Besides the information on energy position and relative concentrations of traps, the main advantage of the method is its ability to determine the trap sign, i.e., the method is capable to resolve electron traps from hole traps. The proposed method is very simple for application. It is also shown how in combination with other techniques it can give a complete picture about trap‐filling dynamics during low‐temperature transient phenomena caused by illumination. The applicability and validity of the method are demonstrated on GaAs in which both electrons and hole traps are found.
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71.55.Eq III-V semiconductors
72.20.Pa Thermoelectric and thermomagnetic effects
82.80.Yc Rutherford backscattering (RBS), and other methods of chemical analysis
07.50.-e Electrical and electronic instruments and components

Transconductance degradation in silicon field‐effect transistors resulting from inversion layer degeneracy

Dae M. Kim, Feng Qian, Yuan Tang, and John S. Blakemore

Appl. Phys. Lett. 56, 2639 (1990); http://dx.doi.org/10.1063/1.102861 (3 pages) | Cited 1 time

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The process parameters used for fabricating a metal‐oxide‐silicon field‐effect transistor (MOSFET) with submicron channel length are shown to lead to a degenerate channel inversion. The Fermi–Dirac statistics inherent in a dense electron gas are incorporated into the MOSFET model and compared with measured transconductance data. Only those electrons within a few kT of the Fermi level contribute to the current, while the Pauli exclusion principle prevents other electrons from participating in conduction. This distinction between conducting and nonconducting electrons in a degenerate gas can bridge in part a large discrepancy existing between observed transconductance and conventional MOSFET theories.
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85.30.De Semiconductor-device characterization, design, and modeling
85.30.Tv Field effect devices
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
72.10.Bg General formulation of transport theory

Application of selective epitaxy to fabrication of nanometer scale wire and dot structures

John A. Lebens, Charles S. Tsai, Kerry J. Vahala, and T. F. Kuech

Appl. Phys. Lett. 56, 2642 (1990); http://dx.doi.org/10.1063/1.102862 (3 pages) | Cited 60 times

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The selective growth of nanometer scale GaAs wire and dot structures using metalorganic vapor phase epitaxy is demonstrated. Spectrally resolved cathodoluminescence images as well as spectra from single dots and wires are presented. A blue shifting of the GaAs peak is observed as the size scale of the wires and dots decreases.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
85.40.Hp Lithography, masks and pattern transfer

Heterojunction bipolar transistor fabrication using Si1−xGex selective epitaxial growth by gas source silicon molecular beam epitaxy

Hiroyuki Hirayama, Masayuki Hiroi, Kazuhisa Koyama, and Toru Tatsumi

Appl. Phys. Lett. 56, 2645 (1990); http://dx.doi.org/10.1063/1.102863 (3 pages) | Cited 10 times

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B doping in Si1−xGex was successfully achieved using HBO2 cell in gas source Si molecular beam epitaxy (Si‐MBE). Combining this B doping method and selective epitaxial growth of Si1−xGex by gas source Si‐MBE, B‐doped Si1−xGex selective epitaxial growth was found to be possible. This B‐doped Si1−xGex selective epitaxial growth was applied to Si1−xGex/Si heterojunction diode and Si1−xGex base heterojunction bipolar transistor (HBT) fabrications. The Si1−xGex base HBT (x=0.16, 0.22, 0.31) showed higher hFE in as‐grown condition than that for a homojunction transistor. The band‐gap difference between the Si1−xGex base and the Si emitter was estimated by the temperature dependence of the collector current ratio between the HBT and the homojunction transistor.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
61.72.uf Ge and Si
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
85.30.Pq Bipolar transistors

Characterization of pulsed laser deposited boron nitride thin films on InP

T. K. Paul, P. Bhattacharya, and D. N. Bose

Appl. Phys. Lett. 56, 2648 (1990); http://dx.doi.org/10.1063/1.102864 (3 pages) | Cited 25 times

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A new technique for deposition of thin‐film boron nitride (BN) from BN wafers has been demonstrated using a Q‐switched ruby laser. The deposition rate was found to be∼7 Å/pulse at an energy density of 2.5 J cm−2. X‐ray photoelectron spectroscopy was used to confirm the film composition. Infrared absorption peaks were observed at 802, 1370, and 1614 cm−1 characteristic of B—N bonds. The films were found to have an indirect band gap of 4.1 eV with resistivity in excess of 1011 Ω cm and breakdown fields between 3.0×105—1.0×106 V cm−1. The dielectric constant of the films was in the range 3.19–3.28. The minimum interface state density on InP as obtained from C‐V (1 MHz) analysis was typically 6.2×1010 cm−2 eV−1, which increased to 4.1×1011 cm−2 eV−1 after annealing at 200 °C in argon. Scanning electron microscopy studies showed that this resulted in the development of micropores in the film.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.61.Ng Insulators

Noncontact, highly sensitive, optical substrate temperature measurement technique

H. Sankur and W. Gunning

Appl. Phys. Lett. 56, 2651 (1990); http://dx.doi.org/10.1063/1.102865 (3 pages) | Cited 8 times

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A novel and sensitive technique to measure the temperature of parallel‐faced optical substrates is presented. The technique is based on the interference of a laser beam within the cavity formed by the flat faces of a substrate. Temperature‐induced changes in the thickness and refractive index of the substrate alter the interference conditions, resulting in a large modulation of the reflected intensity of the laser beam. Advantages and disadvantages of this technique, calibration data, and potential applications are discussed.
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42.87.-d Optical testing techniques
07.60.Ly Interferometers
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.20.N- Thermo-optic effects
78.20.nb Photothermal effects

Growth of high quality AlGaAs by metalorganic molecular beam epitaxy using trimethylamine alane

C. R. Abernathy, A. S. Jordan, S. J. Pearton, W. S. Hobson, D. A. Bohling, and G. T. Muhr

Appl. Phys. Lett. 56, 2654 (1990); http://dx.doi.org/10.1063/1.102866 (3 pages) | Cited 36 times

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AlGaAs grown by metalorganic molecular beam epitaxy (MOMBE) has been problematic due to oxygen and carbon contamination, particularly when triethylaluminum (TEAl) has been used as the aluminum source. Consequently, we have investigated trimethylamine alane (TMAAl) as a potential replacement for the conventional metalorganic Al sources. AlGaAs films with excellent structural and optical properties have been grown with this source. Photoluminescence intensities from AlGaAs grown by MOMBE at 500 °C using TMAAl are comparable to those from material grown by metalorganic chemical vapor deposition at 675 °C using triethylaluminum (TMAl). Carbon and oxygen levels in MOMBE‐grown AlGaAs are drastically reduced in comparison to similar films grown with TEAl.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
72.80.Ey III-V and II-VI semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Enhanced diffusion of Si due to He ion implantation in Si‐delta doped GaAs layers

B. Tell, K. F. Brown Goebeler, J. E. Cunningham, T. H. Chiu, and W. Y. Jan

Appl. Phys. Lett. 56, 2657 (1990); http://dx.doi.org/10.1063/1.102844 (3 pages)

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Enhanced diffusion of Si due to He ion implantation in Si‐delta doped GaAs layers has been observed by the capacitance‐voltage technique. After an 800 °C anneal, an increase as large as an order of magnitude in the diffusion coefficient compared to thermal diffusion was observed. We also observe a decrease in the integrated sheet carrier concentration as a result of the He implants, and the decrease appears independent of annealing time.
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66.30.J- Diffusion of impurities
61.72.U- Doping and impurity implantation
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients

Nonequilibrium electron transport in heterostructure bipolar transistors probed by magnetic field

R. N. Nottenburg, A. F. J. Levi, B. Jalali, D. Sivco, D. A. Humphrey, and A. Y. Cho

Appl. Phys. Lett. 56, 2660 (1990); http://dx.doi.org/10.1063/1.102823 (3 pages) | Cited 4 times

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We show that the static current‐voltage characteristics of a heterojunction bipolar transistor are dramatically influenced by application of a magnetic field. Nonequilibrium base transport has a strong influence on collector/emitter breakdown voltage, VCEB. With a magnetic field applied perpendicular to the direction of the injected emitter current VCEB increases from 2.6 V at 0 T to 8 V at 8 T. In the same device with a magnetic field applied parallel to the current flow, the current gain increases by a factor of 2 over the same magnetic field range. Transistors which exploit nonequilibrium base and collector transport have qualitatively different behavior compared to conventional devices which use diffusive and drift‐diffusive transport.
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85.30.Pq Bipolar transistors
07.55.-w Magnetic instruments and components

Evidence for a real‐space transfer of hot holes in strained GeSi/Si heterostructures

Piotr M. Mensz, Serge Luryi, John C. Bean, and Conor J. Buescher

Appl. Phys. Lett. 56, 2663 (1990); http://dx.doi.org/10.1063/1.102824 (3 pages) | Cited 6 times

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A negative differential resistance is observed in p‐type Ge0.2Si0.8 strained layers grown by molecular beam epitaxy on a Si (100) substrate. The peak to valley ratio is nearly 2 at T=77 K. This effect is accompanied by an increase of the hole current into the Si substrate.
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72.20.Ht High-field and nonlinear effects
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.30.De Semiconductor-device characterization, design, and modeling
73.61.Ga II-VI semiconductors

Does luminescence show semiconductor interfaces to be atomically smooth?

C. A. Warwick, W. Y. Jan, A. Ourmazd, and T. D. Harris

Appl. Phys. Lett. 56, 2666 (1990); http://dx.doi.org/10.1063/1.102825 (3 pages) | Cited 112 times

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Luminescence spectra from quantum wells are routinely interpreted in terms of atomically smooth and atomically abrupt interfaces. Here we show that this interpretation is inconsistent with photoluminescence, photoluminescence excitation, and quantitative microscopic (chemical lattice imaging) results. We argue that the discussion of interfacial roughness in terms of ‘‘an island size’’ is too naive. A full characterization of an interface requires the description of a ‘‘roughness spectrum,’’ specifying the amplitude of the interfacial corrugation versus corrugation wavelength over the relevant length scale.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.55.Cr III-V semiconductors
78.30.Fs III-V and II-VI semiconductors
68.35.Fx Diffusion; interface formation

Impurity‐band transport near the metal–insulator transition in ZnSe epilayers grown by molecular beam epitaxy

T. Marshall and J. Gaines

Appl. Phys. Lett. 56, 2669 (1990); http://dx.doi.org/10.1063/1.102826 (3 pages) | Cited 10 times

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Electrical transport is studied in a number of ZnSe epilayers with donor concentrations in the range 1–3×1017 cm−3. Hall effect data are taken over the temperature range 10–300 K, and magnetoresistance data over the range 10–50 K. Transport is shown to be consistent with a two‐carrier model, the second species being identified with transport in an impurity band distinct from the conduction band. At low temperature, the conductivity σ exhibits a log σ∝−(T0/T)1/4 behavior, and the samples show negative magnetoresistance. Moreover, both the parameter T0 and the magnetoresistance tend toward zero as the dopant concentration increases toward that of the metal–insulator transition.
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73.50.Dn Low-field transport and mobility; piezoresistance
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
71.30.+h Metal-insulator transitions and other electronic transitions
73.61.Ga II-VI semiconductors
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