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15 Jan 1990

Volume 56, Issue 3, pp. 203-301

Page 1 of 2 Pages Next Page | Jump to Page

Changes in refractive index of fluoride glass fibers during fiber fabrication processes

T. Nakai, N. Norimatsu, Y. Noda, O. Shinbori, and Y. Mimura

Appl. Phys. Lett. 56, 203 (1990); http://dx.doi.org/10.1063/1.102831 (3 pages) | Cited 2 times

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Refractive indices of fluoride glass fibers were measured for the first time and a remarkable decrease in the refractive index during fiber fabrication processes has been observed. This decrease is most likely due to the change in the glass structure during fiber drawing and due to the stress induced during preform fabrication processes.
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42.81.Cn Fiber testing and measurement of fiber parameters
42.81.Dp Propagation, scattering, and losses; solitons
42.81.Bm Fabrication, cladding, and splicing
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Enhancement of the guided‐wave second‐harmonic generation in the form of Cerenkov radiation

K. Hayata, K. Yanagawa, and M. Koshiba

Appl. Phys. Lett. 56, 206 (1990); http://dx.doi.org/10.1063/1.102832 (3 pages) | Cited 19 times

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A method for enhancing guided‐wave second‐harmonic generation (SHG) phase matched by a Cerenkov radiation scheme by means of tailoring the transverse (y direction) nonlinear susceptibility profile in the waveguide channel is proposed. Specifically, linear and domain‐inverted (poled) channels embedded in a nonlinear substrate are considered, and the SHG efficiency for each structure is compared with that for the conventional nonlinear channel without domain inversion. Through electromagnetic field analysis, a significant enhancement of SHG is demonstrated, particularly with the domain inverted channel.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.79.Gn Optical waveguides and couplers

Polarization‐independent acoustically tunable optical filter

D. A. Smith, J. E. Baran, K. W. Cheung, and J. J. Johnson

Appl. Phys. Lett. 56, 209 (1990); http://dx.doi.org/10.1063/1.102833 (3 pages) | Cited 13 times

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A polarization‐independent acoustically tunable optical filter is described, with 1.3 nm bandwidth and 145 nm tuning range demonstrated about a center wavelength of 1525 nm. Filtered and unfiltered beams exit from different ports of this 2×2 integrated‐optic structure fabricated on a LiNbO3 substrate. The filter conversion efficiency was 97% for unpolarized light, limited by imperfect splitting of the directional‐coupler polarizing beamsplitters. Using an unpolarized, 105‐nm‐wide light‐emitting diode as the optical source, 16 dB isolation of the filtered port was achieved, both with respect to the nearest nulls and the remote background spectrum.
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42.79.Ci Filters, zone plates, and polarizers
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
42.79.Gn Optical waveguides and couplers
42.82.-m Integrated optics

Measurement of the electrically induced refractive index change in silicon for wavelength λ=1.3 μm using a Schottky diode

A. F. Evans and D. G. Hall

Appl. Phys. Lett. 56, 212 (1990); http://dx.doi.org/10.1063/1.102834 (3 pages) | Cited 9 times

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We report the results of measurements of the electrically induced refractive index change caused by the free‐carrier effect in a silicon Schottky diode. We find that for the wavelength λ=1.3 μm, the real part of the refractive index changes by as much as ‖Δn‖∼0.01 for current densities less than 1 A/cm2. This refractive index change produced changes in the input‐coupling efficiency as large as 75% in our sample geometry.
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78.66.-w Optical properties of specific thin films
73.30.+y Surface double layers, Schottky barriers, and work functions
42.82.-m Integrated optics
42.79.Hp Optical processors, correlators, and modulators

Solitary wave emission from a nonlinear slab waveguide in three dimensions

D. R. Heatley, E. M. Wright, and G. I. Stegeman

Appl. Phys. Lett. 56, 215 (1990); http://dx.doi.org/10.1063/1.102835 (3 pages) | Cited 9 times

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We show numerically that solitary waves, localized in two transverse dimensions, are emitted when a high‐power Gaussian beam is launched into a slab waveguide in which the cladding displays a saturable self‐focusing nonlinearity.
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42.79.Gn Optical waveguides and couplers
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.25.Lc Birefringence
42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency

Optical nonlinearities due to subband structures in Al0.08In0.92Sb/InSb superlattices

D. Walrod, S. Y. Auyang, P. A. Wolff, and Won Tsang

Appl. Phys. Lett. 56, 218 (1990); http://dx.doi.org/10.1063/1.102836 (3 pages) | Cited 12 times

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We report the first observation of optical nonlinearities due to subband structures in the growth direction of an n‐type superlattice by four‐wave mixing in an end‐firing configuration. We observe a nearly eightfold increase in the third‐order optical susceptibility when the electric fields of the CO2 laser are changed from a parallel to a perpendicular orientation to the plane of an Al0.08In0.92Sb/InSb superlattice. No change is observed in a control InSb epilayer under similar conditions.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
73.61.Ey III-V semiconductors
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

A 970 nm strained‐layer InGaAs/GaAlAs quantum well laser for pumping an erbium‐doped optical fiber amplifier

Ming C. Wu, N. A. Olsson, D. Sivco, and A. Y. Cho

Appl. Phys. Lett. 56, 221 (1990); http://dx.doi.org/10.1063/1.102837 (3 pages) | Cited 28 times

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We report the performance of a 970 nm strained‐layer InGaAs/GaAlAs quantum well laser and its application for pumping Er‐doped optical fiber amplifiers. The laser was grown by molecular beam epitaxy and has three In0.2Ga0.8As/GaAs quantum wells. For a 5‐μm‐wide and 400‐μm‐long ridge‐waveguide laser, a cw threshold current of 20 mA and an external quantum efficiency of 0.28 mW/mA per facet were obtained. Maximum output power exceeds 32 mW/facet. With antireflection coating, even higher external quantum efficiency (0.40 mW/mA) was achieved, and more than 20 mW of power was coupled into a single mode fiber. Preliminary experiments of pumping the Er‐doped fiber amplifier gave 15 dB of gain at 1.555 μm for a pump power of 14 mW into the Er fiber.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.81.Wg Other fiber-optical devices

Lateral beam steering in mutual injection coupled Y‐branch grating‐surface‐emitting diode laser arrays

J. M. Hammer, G. A. Evans, N. W. Carlson, D. P. Bour, M. Lurie, S. L. Palfrey, R. Amantea, S. K. Liew, L. A. Carr, E. A. James, J. B. Kirk, and W. F. Reichert

Appl. Phys. Lett. 56, 224 (1990); http://dx.doi.org/10.1063/1.102838 (3 pages) | Cited 3 times

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We have observed lateral electronic beam steering of light emitted by monolithic, two‐dimensional, grating‐surface‐emitting, mutually injection coupled arrays of diode lasers in the AlGaAs/GaAs system. Positionally staggered Y‐branch subarrays are optically connected through pumped waveguides which provide the required phase shift. These observations taken in conjunction with previously reported work on steering such arrays in the longitudinal direction now demonstrate, for the first time, monolithic, two‐dimensional‐coherent‐diode‐laser arrays that may be electronically steered in two orthogonal directions.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Mv Dye lasers
42.50.-p Quantum optics
42.79.Dj Gratings

Dual‐wavelength multiple quantum well n‐i‐p‐i‐n photodetector using an optically bistable abrupt absorption edge

Yasunori Tokuda, Kyozo Kanamoto, Yuji Abe, and Noriaki Tsukada

Appl. Phys. Lett. 56, 227 (1990); http://dx.doi.org/10.1063/1.103178 (3 pages) | Cited 5 times

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A novel method for wavelength‐selective demultiplexing photodetection, making use of an extremely abrupt absorption edge of the optical bistability, has been proposed. As a demonstration of the principle, experimental data are presented on the dual‐wavelength selectivity of an n‐i‐p‐i‐n photodetector with two intrinsic detection regions composed of GaAs/AlAs multiple quantum wells.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
78.20.Jq Electro-optical effects
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
42.65.Pc Optical bistability, multistability, and switching, including local field effects

On the precursor in laser‐generated ultrasound waveforms in metals

F. Alan McDonald

Appl. Phys. Lett. 56, 230 (1990); http://dx.doi.org/10.1063/1.102839 (3 pages) | Cited 48 times

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A laser pulse, when focused on a metal sample, produces characteristic elastic waveforms, which depend on whether thermoelastic or ablative/evaporative mechanisms dominate the generation process. In the thermoelastic regime, with an unconstrained surface, the predominant axial displacement is opposite to the direction of propagation (negative), but there is typically a small transient positive displacement. This precursor is not predicted by elastic point source models, but is predicted by models including thermal diffusion. A recent formulation of pulsed photoacoustic generation is used to show how the precursor arises from interaction of the thermal and elastic modes at the illuminated surface.
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43.35.Ud Thermoacoustics, high temperature acoustics, photoacoustic effect
43.35.Cg Ultrasonic velocity, dispersion, scattering, diffraction, and attenuation in solids; elastic constants
81.70.-q Methods of materials testing and analysis
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects

Direct correlation between reflection electron diffraction intensity behavior during the growth of AlxGa1−xAs/GaAs quantum wells and their photoluminescence properties

C. Deparis, J. Massies, and G. Neu

Appl. Phys. Lett. 56, 233 (1990); http://dx.doi.org/10.1063/1.102840 (3 pages) | Cited 4 times

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The reflection high‐energy electron diffraction (RHEED) intensity level behavior during the growth of AlxGa1−xAs/GaAs quantum wells (QWs) is compared to the photoluminescence characteristics. The correlation between a decrease of the RHEED intensity level and the linewidth broadening of the excitonic QW transitions allows the unambiguous association of such a decrease with a roughening of the growth interface.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.55.Cr III-V semiconductors
61.05.jh Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Formation of silicon tips with <1 nm radius

R. B. Marcus, T. S. Ravi, T. Gmitter, K. Chin, D. Liu, W. J. Orvis, D. R. Ciarlo, C. E. Hunt, and J. Trujillo

Appl. Phys. Lett. 56, 236 (1990); http://dx.doi.org/10.1063/1.102841 (3 pages) | Cited 100 times

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Electron emitters in vacuum microelectronic devices need sharp tips in order to permit electron emission at moderate voltages. A method has been found for preparing uniform silicon tips with a radius of curvature less than 1 nm. These tips are formed by oxidation of 5‐μm‐high silicon cones through exploitation of a known oxidation inhibition of silicon at regions of high curvature.
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81.65.-b Surface treatments
79.70.+q Field emission, ionization, evaporation, and desorption
84.47.+w Vacuum tubes
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology

High‐purity GaSb epitaxial layers grown from Sb‐rich solutions

C. Anayama, T. Tanahashi, H. Kuwatsuka, S. Nishiyama, S. Isozumi, and K. Nakajima

Appl. Phys. Lett. 56, 239 (1990); http://dx.doi.org/10.1063/1.102842 (2 pages) | Cited 35 times

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Undoped GaSb crystals with mirror‐like surfaces were obtained by liquid phase epitaxy from Sb‐rich solutions. The background carrier concentration strongly depended on the growth temperature. By growing crystals below 600 °C, we can obtain a GaSb crystal with a background carrier concentration under 1016 cm−3. Photoluminescence studies showed that native defects related to Sb vacancies were significantly reduced in the GaSb crystal.
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81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
78.55.Cr III-V semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Doping and hydrogenation by ion implantation of glow discharge deposited amorphous silicon films

R. Galloni, Y. S. Tsuo, D. W. Baker, and F. Zignani

Appl. Phys. Lett. 56, 241 (1990); http://dx.doi.org/10.1063/1.102843 (3 pages) | Cited 2 times

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We have studied the effects of ion implanting boron into glow discharge deposited hydrogenated amorphous silicon films (a‐Si:H). Electrical activity more than two orders of magnitude higher than previously reported1 is measured in our samples. Implantations of Si ions are used to study the effect of post‐annealing on the radiation damage. Hydrogen introduced by low‐energy implantation and diffusion is found to completely recover electrical and optical characteristics in Si‐implanted specimens even at the highest concentrations (1021/cm3), where annealing for 1 h at 260 °C was insufficient. Introduction of H in B‐implanted samples was found to deactivate the boron, which can be reactivated by low‐temperature annealing.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
78.66.-w Optical properties of specific thin films
73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
66.30.J- Diffusion of impurities

Antiphase domain free growth of GaAs on Ge in GaAs/Ge/GaAs heterostructures

S. Strite, D. Biswas, N. S. Kumar, M. Fradkin, and H. Morkoç

Appl. Phys. Lett. 56, 244 (1990); http://dx.doi.org/10.1063/1.102818 (3 pages) | Cited 23 times

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GaAs/Ge/GaAs heterostructures have been grown by molecular beam epitaxy on GaAs substrates with nominally (100) and (100) tilted 4° towards [011] orientations. High‐energy electron diffraction is used to study the antiphase boundaries of the GaAs grown on epitaxial Ge. We have observed the annihilation of GaAs antiphase boundaries on Ge grown on (100) GaAs substrates. GaAs on Ge grown on tilted substrates is observed to be free of antiphase domains.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.35.B- Structure of clean surfaces (and surface reconstruction)
61.05.jh Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)

Role of in situ rapid isothermal processing in the solid phase epitaxial growth of II‐A fluoride films on (100) and (111) InP

R. Singh, R. P. S. Thakur, A. Kumar, P. Chou, and J. Narayan

Appl. Phys. Lett. 56, 247 (1990); http://dx.doi.org/10.1063/1.103283 (3 pages) | Cited 10 times

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Show Abstract
Rapid isothermal processing based on incoherent sources of light is emerging as a reduced thermal budget processing technique for the fabrication of next generation of semiconductor devices and circuits. In this letter, we show that integration of the rapid isothermal processing unit and the ultrahigh vacuum deposition system provides an in situ rapid isothermal processing capability for the solid phase epitaxial growth of SrF2 and BaF2 films on (100) and (111)InP. We also show that neither as‐deposited nor ex situ annealed films show solid phase epitaxial growth.
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81.15.Np Solid phase epitaxy; growth from solid phases
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.40.Hp Lithography, masks and pattern transfer
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Transconductance degradation and interface state generation in metal‐oxide‐semiconductor field‐effect transistors with oxynitride gate dielectrics under hot‐carrier stress

G. Q. Lo, W. C. Ting, D. K. Shih, and D. L. Kwong

Appl. Phys. Lett. 56, 250 (1990); http://dx.doi.org/10.1063/1.102819 (3 pages) | Cited 5 times

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The hot‐carrier immunity of submicrometer (0.8 μm) n‐channel metal‐oxide‐semiconductor field‐effect transistors with thin (∼8.6 nm) oxynitride gate dielectrics prepared by rapid thermal reoxidation (RTO) of rapidly thermal nitrided (RTN) SiO2 has been studied. The hot‐carrier immunity was evaluated in terms of hot‐carrier‐induced transconductance degradation (ΔGm/Gm0) and interface state generation (ΔDit/Dit0) which was measured by using charge pumping current (Icp) measurement. It is found that for improved device performance and reliability, there exists an optimum RTO condition for a given RTN SiO2. In addition, a strong correlation between ΔDit/Dit0 and ΔGm/Gm0 has been observed.
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85.30.Tv Field effect devices
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
81.65.-b Surface treatments

Rectification by resonant tunneling diodes

Ned S. Wingreen

Appl. Phys. Lett. 56, 253 (1990); http://dx.doi.org/10.1063/1.102820 (3 pages) | Cited 27 times

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The coefficient of rectification, arect(ω), for a resonant tunneling diode is obtained from an exact solution for the transmission probability T(ϵ) through an oscillating resonant level. The experimentally observed broadening and lowering of the peaks in arect(ω) with increasing frequency ω are explained by the increase in spacing between the sidebands in T(ϵ). Most important, arect(ω) is entirely determined by the dc current. Consequently, any mechanism which broadens the negative differential conductance region will cause a dc‐like coefficient of rectification to persist to frequencies higher than the inverse charge‐transport time.
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73.40.Ei Rectification
73.40.Gk Tunneling
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)

dc and microwave negative differential conductance in GaAs/AlAs superlattices

A. Sibille, J. F. Palmier, H. Wang, J. C. Esnault, and F. Mollot

Appl. Phys. Lett. 56, 256 (1990); http://dx.doi.org/10.1063/1.102821 (3 pages) | Cited 18 times

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Negative differential conductance (NDC) at 300 K in n+‐nn+‐GaAs/AlAs superlattice structures biased perpendicularly to the layers is demonstrated, and shown to be strongly enhanced at microwave frequencies close to the inverse transit time of electrons. The deduced electron velocities are in fair agreement with those independently determined in undoped superlattices where NDC was inhibited by the electric field nonuniformity. From the analysis of the experimental data, we show that NDC is a bulk superlattice effect, not related to ‘‘quantum defects,’’ e.g., enlarged barriers.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.40.Gk Tunneling
73.61.Ey III-V semiconductors

Longitudinal electron transport in hydrogenated amorphous silicon/silicon nitride multilayer structures

R. Hattori and J. Shirafuji

Appl. Phys. Lett. 56, 259 (1990); http://dx.doi.org/10.1063/1.103284 (3 pages) | Cited 1 time

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Electron transport longitudinal to hydrogenated amorphous silicon/silicon nitride (a‐Si:H/a‐SiNx:H) multilayer structures (superlattices) with various barrier layer thicknesses has been measured by the time‐of‐flight method. The barrier thickness dependence of the electron drift velocity supports a transport model based on tunnel hopping from well to well under the influence of frequent trapping events in each well. The applied voltage dependence of the drift velocity is significantly superlinear in contrast with a linear character in bulk a‐Si:H samples. The occurrence of the superlinearity is discussed by considering the applied voltage dependence of various effects which limit the longitudinal electron transport in superlattice structures. The occurrence of the superlinearity is possibly dominated by the existence of continuous distribution of deep traps in the gap of well layers rather than the applied voltage dependence of the tunneling rate, taking into account various possible effects.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.40.Gk Tunneling
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.61.-r Electrical properties of specific thin films

Miniband conduction of minority electrons and negative transconductance by quantum reflection in a superlattice transistor

A. S. Vengurlekar, F. Capasso, A. L. Hutchinson, and W. T. Tsang

Appl. Phys. Lett. 56, 262 (1990); http://dx.doi.org/10.1063/1.102822 (3 pages) | Cited 8 times

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Transport of electrons tunnel injected into a superlattice (SL) is studied. The SL is placed in the base of an n‐p‐n bipolar transistor. By varying the emitter‐base forward bias (VEB), the energy of electrons injected into the base is varied. From the emitter and collector current measurements in the common‐base configuration, it is found that the electron transmission to the collector is strongly dependent on the injection energy, the currents showing a sharp peak, and the associated negative transconductance. The measurements show excellent agreement with the calculated values of VEB at the onset of miniband conduction and at the suppression of injection into the SL due to enhanced quantum reflection by the SL minigap. The transfer characteristics also reveal a low‐current gain regime of electron transport below the onset of miniband conduction, implying conduction mediated by subminiband gap states.
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73.40.Gk Tunneling
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.30.Pq Bipolar transistors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Photoluminescence studies of Si (100) doped with low‐energy (100–1000 eV) B+ ions during molecular beam epitaxy

J.‐P. Noël, J. E. Greene, N. L. Rowell, and D. C. Houghton

Appl. Phys. Lett. 56, 265 (1990); http://dx.doi.org/10.1063/1.102804 (3 pages) | Cited 21 times

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Temperature‐dependent photoluminescence (PL) measurements have been used to characterize 5‐μm‐thick Si(100) epitaxial layers doped in situ during molecular beam epitaxial growth with low‐energy (100, 500, and 1000 eV) 11 B+ ions at growth temperatures of 500, 650, and 800 °C. Moderate doping (NB ∼1017 cm−3) yielded PL features comprised of both sharp and broad peaks in the boron bound exciton (B‐BE) region. At 4.2 K a broad B‐BE feature near 1086 meV dominated, although the sharp transverse optical phonon‐assisted B‐BE peak (B1TO ) at 1092.5 meV was resolvable for NB<1017 cm−3. Increasing the PL sample temperature above 4.2 K caused a rapid decay of the broad B‐BE peak intensity, thus permitting comparison of B1TO intensity for a range of ion energies and growth temperatures. At 10 K, a bulk‐like spectrum containing a sharp B1TO peak with weaker multiexciton peaks B2TO and B3TO was observed for the film growth at the highest temperature and lowest ion energy (800 °C and 100 eV). However, the intensity of the B1TO peak decreased with decreasing growth temperature (constant ion energy) and with increasing ion energy (constant growth temperature). Samples grown at the lowest temperature (500 °C) displayed very different PL spectra with much weaker line emission, a rising PL background, and additional lines near 1040 meV due to ion‐induced residual lattice defects. Quenching of B1TO and the other sharp B‐BE peaks was accompanied by an increase in the N1 peak at 745.7 meV.
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78.55.Hx Other solid inorganic materials
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
61.72.uf Ge and Si
71.35.-y Excitons and related phenomena

Carrier decay in GaAs quantum wells

William Pickin and J. P. R. David

Appl. Phys. Lett. 56, 268 (1990); http://dx.doi.org/10.1063/1.102805 (3 pages) | Cited 46 times

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Carrier decays following pulsed excitation in GaAs‐AlGaAs quantum wells have in the past been attributed to an excitonic recombination path. We show here that such an interpretation is inconsistent with the experimental evidence, and that the decays are controlled by recombination through electronic states at the GaAs‐AlGaAs interfaces. We discuss the expected magnitude of the decay times and the influence of carrier trapping on the decay process.
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73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.55.Cr III-V semiconductors
78.47.-p Spectroscopy of solid state dynamics

High‐pressure vapor transport of ZnGeP2

G. C. Xing, K. J. Bachmann, and J. B. Posthill

Appl. Phys. Lett. 56, 271 (1990); http://dx.doi.org/10.1063/1.103285 (3 pages) | Cited 9 times

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Nominally undoped n‐type single crystals of ZnGeP2 have been fabricated for the first time by high‐pressure vapor transport. These crystals have higher phosphorus concentration than melt‐grown bulk single crystals and exhibit lower sub‐band‐gap absorption in the transparency range between 0.64 and 12 μm. A heretofore unreported absorption peak at 13 μm and a transparency window extending from l5 μm to at least 23 μm have been identified in the infrared for these crystals, as well as in crystals grown from melt.
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81.10.Bk Growth from vapor
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.30.Hv Other nonmetallic inorganics

Growth of pseudomorphic high electron mobility heterostructures by atmospheric pressure metalorganic chemical vapor deposition

N. Pan, J. Carter, X. L. Zheng, H. Hendriks, W. E. Hoke, M. S. Feng, and K. C. Hsieh

Appl. Phys. Lett. 56, 274 (1990); http://dx.doi.org/10.1063/1.102806 (3 pages) | Cited 6 times

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Pseudomorphic high electron mobility heterostructures are demonstrated by atmospheric pressure metalorganic chemical vapor deposition for the first time. Transmission electron microscopy (TEM), variable temperature Hall effect measurements, Shubnikov–de Haas measurements, and photoreflectance were applied to characterize the heterostructures. TEM micrographs of the cross section reveal sharp heterojunction interfaces. Variable temperature Hall effect measurements show a monotonic increase in mobility as the temperature is lowered. With a spacer thickness of 120 Å, a peak mobility of 80 000 cm2/V s at 20 K and a sheet carrier concentration of 1.05×1012 cm−2 are obtained. Similarly, a thinner spacer (60 Å) shows a peak mobility of 57 000 cm2/V s at 25 K with a sheet carrier concentration of 1.40×1012 cm−2. Shubnikov–de Haas measurements in magnetic fields up to 18.5 T show clear oscillations and the quantum Hall effect confirming the existence of a two‐dimensional electron gas.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.50.Fq High-field and nonlinear effects
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
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