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15 Jan 1990

Volume 56, Issue 3, pp. 203-301

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Density of electronic states in a biased resonant tunneling structure

L. N. Pandey, D. Sahu, and Thomas F. George

Appl. Phys. Lett. 56, 277 (1990); http://dx.doi.org/10.1063/1.102807 (3 pages) | Cited 7 times

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We calculate the change in the density of states due to a biased resonant tunneling structure. The maximum of the density of states near resonance gets shifted towards the low‐energy side compared to the unbiased case, as does the transmission coefficient, although the two need not be identical. For the case of asymmetric barrier heights, the left‐right symmetry of the density of states is broken when the field is nonvanishing.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.40.Gk Tunneling
79.60.Dp Adsorbed layers and thin films
79.70.+q Field emission, ionization, evaporation, and desorption
71.20.-b Electron density of states and band structure of crystalline solids

Nonplanar silicon oxidation in dry O2+NF3

K. Imai and K. Yamabe

Appl. Phys. Lett. 56, 280 (1990); http://dx.doi.org/10.1063/1.102808 (3 pages) | Cited 4 times

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Nonplanar silicon oxidation in a dry O2+NF3 gas mixture has been investigated. Oxide morphologies at silicon corners following 800 °C oxidation in dry O2 and in dry O2+NF3 gas are observed using a scanning electron microscope. While a serious decrease in oxide thickness at convex silicon corners is observed following oxidation in dry O2, no inhibition of oxide growth occurs and the Si/SiO2 interface is smoothly rounded off at the corners following oxidation in dry O2+NF3. The effects of adding NF3 gas to a dry O2 atmosphere on nonplanar oxidation are discussed. Furthermore, a sacrificial oxidation in dry O2+NF3 prior to forming the thin capacitor oxide is found to be very effective for reducing the oxide leakage current for a trenched capacitor.
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81.65.-b Surface treatments
68.35.B- Structure of clean surfaces (and surface reconstruction)
73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology

Detailed characterization of HgCdTe/CdTe multiple quantum wells

C. L. Cesar, M. N. Islam, R. D. Feldman, R. F. Austin, D. S. Chemla, L. C. West, and A. E. DiGiovanni

Appl. Phys. Lett. 56, 283 (1990); http://dx.doi.org/10.1063/1.102809 (3 pages) | Cited 12 times

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We present absorption measurements in HgCdTe/CdTe multiple quantum wells as a function of temperature, polarization, and well size in the 3–4 μm wavelength region. The energy levels are calculated using a model that includes band nonparabolicity. The spectra are fitted to a sum of continuous broadened steps including the two‐dimensional Sommerfeld enhancement factor. Polarization measurements confirm the assignment of heavy and light holes. The ratio between heavy and light hole absorption of 2.3/1 agrees well with theory. The fit of the linewidth with temperature shows a homogeneous linewidth of 4.6 meV times the density of longitudinal optical phonons and an inhomogeneous linewidth of 6.4 meV, which is similar to the alloy broadening in the bulk material.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.30.Fs III-V and II-VI semiconductors

Strain mapping in [111] and [001] InGaAs/GaAs superlattices

U. D. Venkateswaran, L. J. Cui, M. Li, B. A. Weinstein, K. Elcess, C. G. Fonstad, and C. Mailhiot

Appl. Phys. Lett. 56, 286 (1990); http://dx.doi.org/10.1063/1.102810 (3 pages) | Cited 15 times

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Raman area maps measuring the strain in lattice‐mismatched [111] and [001] oriented InxGa1−xAs/GaAs superlattices (x=0.1, 0.17) are presented and compared with independent x‐ray rocking curve studies of the average strain in the same samples. We find that the LO phonon frequency, but not the TO frequency, is a valid measure of strain for [111] oriented superlattices exhibiting one‐mode behavior. This is explained by the lack of compensation between the effects of alloying and strain for the TO mode in InxGa1−xAs. The capability to nondestructively map small growth variations in superlattice and buffer layer constituents is demonstrated.
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78.30.Fs III-V and II-VI semiconductors
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

InGaP/GaAs single quantum well structure growth on GaAs facet walls by chloride atomic layer epitaxy

Akira Usui, Haruo Sunakawa, Frank J. Stützler, and Koichi Ishida

Appl. Phys. Lett. 56, 289 (1990); http://dx.doi.org/10.1063/1.102811 (3 pages) | Cited 14 times

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InGaP/GaAs single quantum well(SQW) structure growth on GaAs facet wall is achieved by atomic layer epitaxy (ALE) using chloride source gases, such as InCl and GaCl. GaAs facets are formed on GaAs(100) surface openings by conventional hydride vapor phase epitaxy, which have {011} sidewalls perpendicular to the surface, {111}B and (100) faces. ALE growth of SQWs onto these faces results in a very smooth and uniform surface, as shown by scanning electron microscopy observation and cathodoluminescence measurements. The self‐limiting mechanism for ALE is also retained in such selective sidewall growth of heterostructures.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.35.B- Structure of clean surfaces (and surface reconstruction)
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Critical thickness in epitaxial CdTe/ZnTe

J. Cibert, Y. Gobil, Le Si Dang, S. Tatarenko, G. Feuillet, P. H. Jouneau, and K. Saminadayar

Appl. Phys. Lett. 56, 292 (1990); http://dx.doi.org/10.1063/1.102812 (3 pages) | Cited 50 times

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The critical thickness for coherent growth of CdTe on ZnTe by molecular beam epitaxy is assessed by reflection high‐energy electron diffraction, low‐temperature photoluminescence, and transmission electron microscopy. The value is found to be 5 monolayers for this high mismatch system (6%). As opposed to similar studies on III‐V and Si‐Ge systems, there is no evidence of island formation before relaxation by dislocations at the interface.
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68.55.-a Thin film structure and morphology
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.35.Dv Composition, segregation; defects and impurities
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

In situ epitaxial growth of Bi2(Sr,Ca)3Cu2Ox films by ion beam sputtering with an atomic oxygen source

J. Fujita, T. Yoshitake, H. Igarashi, and T. Satoh

Appl. Phys. Lett. 56, 295 (1990); http://dx.doi.org/10.1063/1.103286 (3 pages) | Cited 12 times

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In situ epitaxial growth of Bi2(Sr,Ca)3Cu2Ox films was performed by ion beam sputtering in atomic oxygen ambience at the substrate temperature of 640 °C. The films showed an epitaxial growth in which the a and b axes were parallel to 〈100〉 MgO, and the superstructure according to the incommensurate modulation along the b axis was also observed. The superconducting properties of the as‐grown films seemed to sensitively depend on the oxidation treatment during the cooling down process. The zero resistivity temperature Tc(R=0) of a 600‐Å‐thick film cooled down in the same atomic oxygen density as the film growth ambience was 60 K, but it increased up to 80 K after a post‐deposition annealing at 500 °C for 1 h in air. In contrast, as‐grown films cooled down in insufficient oxidation ambience showed the Tc(R=0) of 76 K without post‐deposition annealing. The control of the oxygen concentration is critical for the superconductivity of as‐grown films.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.15.Cd Deposition by sputtering
74.70.-b Superconducting materials other than cuprates
74.78.-w Superconducting films and low-dimensional structures

Creation of strong pinning sites by x‐ray irradiation for Gd1Ba2Cu3O7−x superconducting thin films

Shigemi Kohiki, Shin‐ichiro Hatta, Kentaro Setsune, Kiyotaka Wasa, Yasuhiro Higashi, Sei Fukushima, and Yohichi Gohshi

Appl. Phys. Lett. 56, 298 (1990); http://dx.doi.org/10.1063/1.103287 (3 pages) | Cited 9 times

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A large enhancement of critical current density with the small rate of flux creep was realized by x‐ray irradiation before the oxygen annealing for Gd1Ba2Cu3O7−x superconducting thin films. The significantly increased magnetization showed both the temperature independence and the small magnetic relaxation. The activation energy estimated by the flux creep model increased from 0.1 to 0.25 eV with the x‐ray irradiation treatment.
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74.25.Uv Vortex phases (includes vortex lattices, vortex liquids, and vortex glasses)
74.78.-w Superconducting films and low-dimensional structures
74.70.-b Superconducting materials other than cuprates
74.25.Sv Critical currents
FREE

Erratum: Surface structure change during solid phase epitaxial growth of an amorphous Si film deposited on Si (111) [Appl. Phys. Lett. 52, 619 (1988)]

Y. Shigeta

Appl. Phys. Lett. 56, 301 (1990); http://dx.doi.org/10.1063/1.103338 (1 page)

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Abstract Unavailable
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68.35.B- Structure of clean surfaces (and surface reconstruction)
68.55.-a Thin film structure and morphology
81.15.Np Solid phase epitaxy; growth from solid phases
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
99.10.Cd Errata
FREE

Erratum: Thickness effect of amorphous Si film on formation of 7×7 superlattice surface during its solid phase epitaxial growth [Appl. Phys. Lett. 55, 2078 (1989)]

Yukichi Shigeta and Kunisuke Maki

Appl. Phys. Lett. 56, 301 (1990); http://dx.doi.org/10.1063/1.103339 (1 page)

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Abstract Unavailable
Show PACS
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.55.-a Thin film structure and morphology
81.15.Np Solid phase epitaxy; growth from solid phases
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
99.10.Cd Errata
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