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22 Jan 1990

Volume 56, Issue 4, pp. 307-405

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Epitaxial growth of n+‐n GaAs metal‐semiconductor field‐effect transistor structures using tertiarybutylarsine

R. M. Lum, J. K. Klingert, F. Ren, and N. J. Shah

Appl. Phys. Lett. 56, 379 (1990); http://dx.doi.org/10.1063/1.102791 (3 pages) | Cited 13 times

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We report the first demonstration of metal‐semiconductor field‐effect transistors (MESFETs) made from GaAs structures grown with an alkylarsine source, tertiarybutylarsine (t‐BuAsH2). MESFET fabrication was performed in parallel on t‐BuAsH2 and arsine‐grown wafers to enable direct comparison of device characteristics. The GaAs n+‐n MESFETs made with t‐BuAsH2 exhibited excellent saturation and pinch‐off characteristics, and diode performance comparable to arsine‐grown devices. Although the peak transconductance gm was lower than that achieved with the arsine sample, the form of the gm versus gate voltage curves for the t‐BuAsH2‐grown devices were characteristic of well‐behaved GaAs MESFETs. These initial results demonstrate the capability of t‐BuAsH2 for growing electronic device structures having good carrier transport properties and effective isolation layers.
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85.30.Tv Field effect devices
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.61.Ey III-V semiconductors

Lattice‐matched Sc1−xErxAs/GaAs heterostructures: A demonstration of new systems for fabricating lattice‐matched metallic compounds to semiconductors

C. J. Palmstrøm, S. Mounier, T. G. Finstad, and P. F. Miceli

Appl. Phys. Lett. 56, 382 (1990); http://dx.doi.org/10.1063/1.102792 (3 pages) | Cited 36 times

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Successful growth of lattice‐matched Sc1−xErxAs layers buried in GaAs with a room‐temperature resistivity of ∼50 μΩ cm demonstrates the feasibility of fabricating heterostructures of lattice‐matched rare‐earth monopnictides and monochalcogenides in semiconductors. Reflection high‐energy electron diffraction oscillations during ScAs, ErAs, and Sc1−xErxAs growth indicate monolayer‐by‐monolayer growth.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.55.-a Thin film structure and morphology
81.15.Cd Deposition by sputtering
61.05.jh Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)

Electron focusing with multiparallel one‐dimensional channels made by focused ion beam

K. Nakamura, D. C. Tsui, F. Nihey, H. Toyoshima, and T. Itoh

Appl. Phys. Lett. 56, 385 (1990); http://dx.doi.org/10.1063/1.102793 (3 pages) | Cited 33 times

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Electron focusing effect is observed in a two‐dimensional electron gas using samples with simple multiparallel one‐dimensional channels made by a Be focused ion beam (FIB). Subharmonics and harmonics are resolved; their strengths allow a direct determination of the elastic scattering length le =1.8 μm and the specularity coefficient p=0.35 for electron reflection at the boundary defined by the FIB. The temperature dependence of the focusing effect is much weaker than the Shubnikov–de Haas effect.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
61.72.U- Doping and impurity implantation

HgCdTe all‐epitaxial semiconductor/semimetal Schottky photodiode

J. W. Sulhoff, J. L. Zyskind, C. A. Burrus, R. D. Feldman, and R. F. Austin

Appl. Phys. Lett. 56, 388 (1990); http://dx.doi.org/10.1063/1.102794 (3 pages) | Cited 3 times

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We propose and demonstrate an all‐epitaxial semiconductor/semimetal Schottky (S3) photodiode based on an n‐type Hg0.56Cd0.46 Te/HgTe isotype heterojunction. The structure, grown using molecular beam epitaxy, was fabricated into back‐illuminated mesa diodes. A 40‐μm‐diam photodiode shows room‐temperature rectification and high efficiency photoresponse, with a long‐wavelength cutoff of 2.43 μm and a peak quantum efficiency of 44% at 2.0 μm for 250 mV of reverse bias. The dark current at this bias is 100 μA.
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85.60.Dw Photodiodes; phototransistors; photoresistors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.50.Pz Photoconduction and photovoltaic effects
73.40.Ei Rectification

Epitaxial Y1Ba2Cu3O7−y/Y1−xPrxBa2Cu3O7−y heterostructures

T. Venkatesan, A. Inam, B. Dutta, R. Ramesh, M. S. Hegde, X. D. Wu, L. Nazar, C. C. Chang, J. B. Barner, D. M. Hwang, and C. T. Rogers

Appl. Phys. Lett. 56, 391 (1990); http://dx.doi.org/10.1063/1.103291 (3 pages) | Cited 44 times

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For a variety of device applications, junction devices in particular, we have demonstrated a heterostructure system of Y1Ba2Cu3O7−y/Y1−xPrxBa2Cu3O7−y which maintains epitaxy over the entire Pr composition range x=0–1. We have grown both trilayer and multiperiod superlattices which show nearly single crystalline helium ion backscattering minimum yields of <6% in the topmost layer. X‐ray diffraction measurements indicate c‐axis orientation by a transverse scan across (005) line with a full width at half maximum of 0.6° and 0.4° on MgO and SrTiO3 substrates, respectively. Scanning Auger electron depth profiles and cross‐sectional transmission electron micrographs indicate abrupt Pr/Y interfaces within one unit cell and virtually no disruption of the layered structure at the interface. These results indicate the potential for the growth of excellent heterostructures and superlattices of the high‐temperature superconductors.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.35.B- Structure of clean surfaces (and surface reconstruction)
74.70.-b Superconducting materials other than cuprates
74.78.-w Superconducting films and low-dimensional structures

Ion beam deposition of in situ superconducting Y‐Ba‐Cu‐O films

J. D. Klein, A. Yen, and S. L. Clauson

Appl. Phys. Lett. 56, 394 (1990); http://dx.doi.org/10.1063/1.103292 (3 pages) | Cited 7 times

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Oriented superconducting YBa2Cu3O7 thin films were deposited on yttria‐stabilized zirconia substrates by ion beam sputtering of a nonstoichiometric oxide target. The films exhibited zero‐resistance critical temperatures as high as 80.5 K without post‐deposition anneals. Both the deposition rate and the c lattice parameter data displayed two distinct regimes of dependence on the beam power of the ion source. Low‐power sputtering yielded films with large c dimensions and low Tc’s. Higher power sputtering produced a continuous decrease in the c lattice parameter and an increase in critical temperatures.
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74.78.-w Superconducting films and low-dimensional structures
74.70.-b Superconducting materials other than cuprates
81.15.Cd Deposition by sputtering
68.55.-a Thin film structure and morphology

High‐speed rotation of magnets on high Tc superconducting bearings

F. C. Moon and P.‐Z. Chang

Appl. Phys. Lett. 56, 397 (1990); http://dx.doi.org/10.1063/1.102795 (3 pages) | Cited 92 times

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Levitation and rotation of cylindrical rare‐earth magnets on yttrium‐barium‐copper‐oxide superconducting bearings has been sustained at speeds of up to 120 000 rpm with a surface speed of 40 m/s. The decay of the free rotation rate has been measured at both atmospheric pressure and a partial vacuum to 2.6 μm Hg. The decay measurements in vacuum indicate that the flux drag torques are constant and independent of speed. The magnetic shear stress on the rotor magnet is estimated to be 150 dyn/cm2. It is believed that drag torques on rotating magnets are related to asymmetry in the flux density pattern of the magnet.
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84.71.Ba Superconducting magnets; magnetic levitation devices
07.55.Db Generation of magnetic fields; magnets
85.70.-w Magnetic devices

Superlattices of Y‐Ba‐Cu‐O/Yy‐Pr1−y‐Ba‐Cu‐O grown by pulsed laser deposition

X. D. Wu, X. X. Xi, Q. Li, A. Inam, B. Dutta, L. DiDomenico, C. Weiss, J. A. Martinez, B. J. Wilkens, S. A. Schwarz, J. B. Barner, C. C. Chang, L. Nazar, and T. Venkatesan

Appl. Phys. Lett. 56, 400 (1990); http://dx.doi.org/10.1063/1.103293 (3 pages) | Cited 34 times

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Superlattices of YBa2Cu3O7−x/YyPr1−yBa2Cu3O7−x(y=0.8 and 0.0) have been successfully grown in situ on MgO and LaAlO3 by using a multitarget pulsed laser deposition system. Satellite peaks have been observed in x‐ray diffraction for the superlattices with modulation wavelengths from about few tens of angstroms to few hundred angstroms. The x‐ray diffraction measurements also indicate that the multilayers have c axis normal to the substrates. Good crystallinity has been observed in the superlattices with He ion backscattering minimum yields of about 10%, indicating highly oriented growth. The presence of a periodic layer structure was further confirmed by the observation of composition oscillations in these structures by secondary‐ion mass spectrometry.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Effect of the critical current criteria on the Ic vs T relation near Tc in polycrystalline Y‐Ba‐Cu‐O thin films

Sang Young Lee, Y. H. Kim, J. H. Park, and S. S. Choi

Appl. Phys. Lett. 56, 403 (1990); http://dx.doi.org/10.1063/1.103294 (3 pages) | Cited 9 times

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We report on the temperature dependence of the critical current (Ic) near Tc for two Y‐Ba‐Cu‐O thin films having zero‐dissipation temperature (Tc) of 81 K and a Y‐Ba‐Cu‐O thin film having Tc of 71 K. At temperatures higher than 0.9Tc, the critical current in a voltage criterion of 1 μV/cm appears proportional to (1−T/Tc)n with n≊2, and n≊1.5 in a 10 μV/cm criterion, exhibiting the dependence of n on the critical current criteria. This observation is in contrast with the report of n=1.5 by Ogale et al. [Phys. Rev. B 36, 7210 (1987)], Yuan et al. [J. Appl. Phys. 64, 4091 (1988)], and Horng et al. [Phys. Rev. B 39, 9628 (1989)], implying that n=2, the value for the superconductor‐normal metal‐superconductor tunneling junction of BCS superconductors near Tc must be taken into consideration to understand the intergrain tunneling process in polycrystalline high Tc thin films.
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74.25.Sv Critical currents
74.70.-b Superconducting materials other than cuprates
74.78.-w Superconducting films and low-dimensional structures
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