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29 Jan 1990

Volume 56, Issue 5, pp. 411-496

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Third‐order nonlinear optical properties of retinal derivatives

T. Sakai, Y. Kawabe, H. Ikeda, and K. Kawasaki

Appl. Phys. Lett. 56, 411 (1990); http://dx.doi.org/10.1063/1.102796 (3 pages) | Cited 8 times

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Retinal derivatives were synthesized and their third‐order nonlinear optical properties were measured by degenerate four‐wave mixing with temporally incoherent nanosecond laser pulses. Fast optical nonlinearities, whose response time was shorter than 30 ps, were observed. The magnitudes of resonant third‐order hyperpolarizability were found to be 10−31∼10−29 esu. The large optical nonlinearities were of electronic origin.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.47.-p Spectroscopy of solid state dynamics
78.66.Qn Polymers; organic compounds

Linewidths of Cu i(511 nm) and Au i(628 nm) laser transitions at room temperature

Chuan‐Dong Wen and R. C. Tobin

Appl. Phys. Lett. 56, 414 (1990); http://dx.doi.org/10.1063/1.102797 (3 pages) | Cited 4 times

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Sharp spectral lines are obtained for the Cu i 511 nm and the Au i 628 nm transitions from a sputtering‐based laser operating at room temperature. The Au i line exhibits a single peak with a linewidth of 360 MHz and the Cu i line consists of three well‐resolved peaks with linewidths of 800, 700, and 700 MHz in order of increasing frequency. The spectral lines result from saturated emission on the strongest hyperfine components.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Femtosecond measurements of the nonresonant nonlinear index in AlGaAs

M. J. LaGasse, K. K. Anderson, C. A. Wang, H. A. Haus, and J. G. Fujimoto

Appl. Phys. Lett. 56, 417 (1990); http://dx.doi.org/10.1063/1.102798 (3 pages) | Cited 45 times

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Time‐division interferometry with 430 fs tunable laser pulses is used for direct femtosecond measurements of the wavelength dependence of the nonresonant nonlinear index of refraction, n2, in AlGaAs waveguides at room temperature. Below band‐gap n2 values of ∼10−12 cm2/W are observed with resonant enhancement as the laser wavelength is tuned toward the band edge.
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42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.70.-a Optical materials
42.79.Gn Optical waveguides and couplers
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Reduced‐confinement antennas for GaAlAs integrated optical waveguides

D. E. Bossi, W. D. Goodhue, M. C. Finn, K. Rauschenbach, J. W. Bales, and R. H. Rediker

Appl. Phys. Lett. 56, 420 (1990); http://dx.doi.org/10.1063/1.102776 (3 pages) | Cited 5 times

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Monolithically integrated reduced‐confinement antennas are shown to produce reductions of >35% in the far‐field beam divergence for radiation emitted from single‐mode GaAlAs slab waveguides, yielding far‐field beams as narrow as 8.2° FWHM along the direction perpendicular to the wafer surface. Reduced confinement of the guided mode near the output endface is achieved using a novel molecular beam epitaxy growth technique to produce a longitudinal variation in the refractive index and thickness of the waveguide film. Unlike present horn antennas, the reduced‐confinement geometry has the distinct advantage of being compatible with two‐dimensional antenna development.
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42.79.Gn Optical waveguides and couplers
42.82.-m Integrated optics
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Linear and nonlinear optical properties of 3‐methyl‐4‐methoxy‐4′‐nitrostilbene single crystals

J. D. Bierlein, L. K. Cheng, Y. Wang, and W. Tam Company

Appl. Phys. Lett. 56, 423 (1990); http://dx.doi.org/10.1063/1.102777 (3 pages) | Cited 35 times

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Single crystals of the new nonlinear optical material 3‐methyl‐4‐methoxy‐4′‐nitrostilbene (MMONS) have been grown by a seeded solution growth technique and the linear and nonlinear optic and electro‐optic properties determined. MMONS is highly birefringent with nz−nx =0.75 (0.532 μm), has large nonlinear optical coefficients with d33=184 pm/V and d24=71 pm/V (1.064 μm), has large electro‐optic coefficients with r33=39.9 pm/V (0.6328 μm), and can be efficiently type II phase matched for Nd lasers emitting ∼1 μm.
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42.70.-a Optical materials
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.20.Jq Electro-optical effects

Etch‐tuned ridged waveguide magneto‐optic isolator

R. Wolfe, R. A. Lieberman, V. J. Fratello, R. E. Scotti, and N. Kopylov

Appl. Phys. Lett. 56, 426 (1990); http://dx.doi.org/10.1063/1.102778 (3 pages) | Cited 29 times

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Isolation ratios as large as 3000 to 1 (−35 dB) at wavelengths near 1.55 μm have been measured on ridged waveguide Faraday rotation isolators. These are the best results ever reported for any waveguide isolator. Single‐mode, triple‐layer bismuth yttrium iron garnet films were chemically etched to reduce the linear birefringence of the active top layer to zero at 1.49 μm. Ion implantation enhanced etching was used to create ridges 8 μm wide and 0.5 μm high. Using fiber coupled light from a tunable color center laser, isolation ratios of −25 dB or better were achieved over a wavelength range of ±0.03 μm near 1.5 μm. A silica overlayer was used to increase the effective thickness of the active layer and raise the optimum wavelength from 1.49 to 1.55 μm.
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85.70.Sq Magnetooptical devices
42.82.-m Integrated optics
75.70.-i Magnetic properties of thin films, surfaces, and interfaces
42.79.-e Optical elements, devices, and systems

Integrated external cavity quantum well laser array using single epitaxial growth on a patterned substrate

C. J. Chang‐Hasnain, E. Kapon, J. P. Harbison, and L. T. Florez

Appl. Phys. Lett. 56, 429 (1990); http://dx.doi.org/10.1063/1.102779 (3 pages) | Cited 3 times

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We report the monolithic integration of a quantum well laser array and a transparent waveguide with higher band‐gap material using a single step of molecular beam epitaxy on a patterned, nonplanar substrate. The substrate has a periodically corrugated patterned section longitudinally adjacent to an unpatterned, planar section. The laser heterostructure on the corrugated section of the substrate has a thicker quantum well and, thus, lower effective band gap than that of the one grown on the planar section. Hence, a waveguide transparent at the laser array emission wavelength is formed on the planar section. We demonstrate phase locking of the otherwise uncoupled laser array using diffraction coupling through the transparent waveguide section. Emission wavelength tuning of ∼80 Å is also obtained using carrier injection into the waveguide section.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
42.82.-m Integrated optics
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Hemispherical resonator study for surface‐emitting InGaAsP/InP lasers

X. L. Jing, J. C. Ho, and P. K. L. Yu

Appl. Phys. Lett. 56, 432 (1990); http://dx.doi.org/10.1063/1.102756 (2 pages) | Cited 1 time

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For making surface‐emitting lasers such as InGaAsP/InP double‐heterostructure lasers, it is important to select and study the resonator properly. The authors have compared the relative light output power of two different structures, the plane‐parallel and the hemispherical resonators. The InGaAsP/InP double‐heterostructure was grown by liquid phase epitaxy. The different resonators on the same wafer were fabricated using chemical etching, lithography, evaporation, and other integrated circuit process techniques. Output optical power of the devices with the hemispherical resonator is a factor of 2 larger than those with the plane‐parallel resonator. This is because the hemispherical resonator structure has a smaller diffraction loss than the plane‐parallel structure.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.By Design of specific laser systems

1/2 〈100〉 {100} dislocation loops in a zinc blende structure

S. N. G. Chu and S. Nakahara

Appl. Phys. Lett. 56, 434 (1990); http://dx.doi.org/10.1063/1.102757 (3 pages) | Cited 11 times

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We report, for the first time, the identification of extrinsic dislocation loops lying on the {100} planes with 1/2〈100〉 types of Burgers vectors in a zinc blende structure in InGaAsP lattice matched to InP. These dislocation loops generated only in nonradiative recombination assisted point‐defect motion process under intensed laser light, and form the 〈100〉 type dark line defects in degraded 1.3 μm wavelength laser diodes.
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07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
61.72.-y Defects and impurities in crystals; microstructure
85.30.-z Semiconductor devices
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Effect of oxygen in diamond deposition at low substrate temperatures

Y. Liou, R. Weimer, D. Knight, and R. Messier

Appl. Phys. Lett. 56, 437 (1990); http://dx.doi.org/10.1063/1.102758 (3 pages) | Cited 45 times

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Thin diamond films were deposited on different substrates at temperatures below 500 °C by a microwave plasma‐enhanced chemical vapor deposition system. The deposited films were amorphous carbon or diamond films depending on the different gas mixtures used. The addition of oxygen to the gas mixtures was found to be critical for diamond growth at low temperatures. Without oxygen, the deposited films were white soots and easily scratched off. Increasing the oxygen input improved the quality of the Raman peaks and increased the film transparency. The diamond films were also characterized by scanning electron microscopy.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.40.Tv Optical and dielectric properties related to treatment conditions
82.33.Xj Plasma reactions (including flowing afterglow and electric discharges)
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.65.-b Surface treatments

Resistivity and morphology of TiSi2 formed on Xe+‐implanted polycrystalline silicon

Hiroki Kuwano, J. R. Phillips, and J. W. Mayer

Appl. Phys. Lett. 56, 440 (1990); http://dx.doi.org/10.1063/1.103295 (3 pages) | Cited 25 times

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Xe ion irradiation of polycrystalline silicon before Ti deposition is found to affect subsequent silicide formation. Silicide films were prepared by implanting 60, 100, or 240 keV Xe+ ions into 500‐nm‐thick undoped polycrystalline silicon before depositing Ti and annealing in vacuum. Preimplantation altered the subsequent silicide resistivity, x‐ray diffraction patterns, and morphology as compared to films prepared on unimplanted polycrystalline Si substrates. We found that minimal TiSi2 resistivities were achieved at lower temperatures with preimplantation, indicating that the Xe‐implanted substrate promotes a lower temperature transition from the metastable C49 phase to the low‐resistivity equilibrium C54 phase of TiSi2. X‐ray diffraction results confirmed the lower temperature formation of the C54 phase with preimplantation. Low‐temperature annealing (650 °C, 30 min) of 6×1016 cm−2, 240 keV Xe+‐implanted samples yielded low‐resistivity (∼22 μΩ cm) silicide films, while simultaneously annealed samples without preimplantation had resistivity five times higher. Lower doses were effective at lower implant energies, with low resistivity achieved after 725 °C, 30 min annealing for 2×1015 cm−2, 60 keV Xe+ preimplantation.
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68.55.-a Thin film structure and morphology
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
81.40.-z Treatment of materials and its effects on microstructure, nanostructure, and properties
61.80.Jh Ion radiation effects

X-ray diffraction from corrugated crystalline surfaces and interfaces

A. T. Macrander and S. E. G. Slusky

Appl. Phys. Lett. 56, 443 (1990); http://dx.doi.org/10.1063/1.102759 (3 pages) | Cited 39 times

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Satellite peaks analogous to superlattice peaks have been observed for both corrugated InP substrates and for such substrates overgrown with epitaxial InGaAsP. These satellites are entirely due to the corrugations. High-resolution x-ray diffraction using extremely asymmetric reflections in the glancing exit configuration was used. A kinematical expression for the intensities of the satellite peaks is derived for strain-free structures.
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61.05.cc Theories of x-ray diffraction and scattering
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.55.-a Thin film structure and morphology
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Erbium luminescence in doped amorphous silicon

T. Oestereich, C. Swiatkowski, and I. Broser

Appl. Phys. Lett. 56, 446 (1990); http://dx.doi.org/10.1063/1.102760 (2 pages) | Cited 47 times

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For the first time the observation of a sharp peak in the broad luminescence spectrum of hydrogenated amorphous silicon (a‐Si:H) has been achieved, using erbium as a dopant. Thus, a method of investigating the structure of solid‐state systems which previously has only been used with crystals can now be applied to a‐Si:H. The idea is to measure the splitting of the luminescence of ‘‘spy’’ atoms, or ions, by the crystal field of the host substance subject of investigation into which they are incorporated. Finding a suitable substance for use with a‐Si:H has proven to be a difficult task, which we now have accomplished as a first step in establishing this method for the investigation of amorphous substances.
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78.35.+c Brillouin and Rayleigh scattering; other light scattering
42.55.Rz Doped-insulator lasers and other solid state lasers

Solid phase epitaxial growth of GaAs on Si substrates

K. I. Cho, W. K. Choo, S. C. Park, T. Nishinaga, and B.‐T. Lee

Appl. Phys. Lett. 56, 448 (1990); http://dx.doi.org/10.1063/1.102761 (3 pages) | Cited 3 times

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Thin films of GaAs on Si were grown by molecular beam epitaxy, which involves the solid phase epitaxial (SPE) growth of the amorphous GaAs buffer layer. A Rutherford backscattering minimum channeling yield of ∼9.4% has been obtained for a 0.8‐μm‐thick GaAs film. Cross‐sectional transmission electron micrographs and reflection high‐energy electron diffraction results have revealed that misfit dislocations are mostly confined to what used to be the buffer layer of ∼300 nm in thickness, and that the microtwins (and/or stacking faults) are mostly originated from the GaAs/Si interface and are generated during SPE growth.
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61.72.Bb Theories and models of crystal defects
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.15.Np Solid phase epitaxy; growth from solid phases

Effects of surface hydrogen on the air oxidation at room temperature of HF‐treated Si (100) surfaces

N. Hirashita, M. Kinoshita, I. Aikawa, and T. Ajioka

Appl. Phys. Lett. 56, 451 (1990); http://dx.doi.org/10.1063/1.102762 (3 pages) | Cited 63 times

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Thermally stimulated desorption and x‐ray photoelectron spectroscopy were used to study the air oxidation at room temperature of HF‐treated Si(100) surfaces. The desorption results indicated an appreciable density of hydrogen at the surface. Air oxidation experiments with predesorbing surface hydrogen were carried out and an obtained linear relationship between the amount of H2 desorption and oxidation indicated that the oxidation was allowed by H2 desorption. The surface hydrogen was also found to be stable in air at room temperature and to contribute to a retardation in air oxidation of the surface.
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82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
81.65.-b Surface treatments
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
85.40.Ls Metallization, contacts, interconnects; device isolation

Gate‐controlled subband structure and dimensionality of the electron system in a wide parabolic quantum well

A. Wixforth, M. Sundaram, K. Ensslin, J. H. English, and A. C. Gossard

Appl. Phys. Lett. 56, 454 (1990); http://dx.doi.org/10.1063/1.102763 (3 pages) | Cited 21 times

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Remotely doped parabolic quantum wells have been used to produce thick (>2000 Å) layers of high‐mobility electron systems. Using a front gate electrode we are able to simultaneously deplete the well and change the actual thickness of this quasi‐three‐dimensional system. Thus, we can successively depopulate the elecrical subbands in the well, leading to step‐like changes in the gate to channel capacitance. This yields direct insight into the subband structure of the electron system and allows its spectroscopy without the need of a magnetic field. The experimental results are compared with those of a self‐consistent subband calculation and we obtain a qualitative agreement.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
71.18.+y Fermi surface: calculations and measurements; effective mass, g factor
71.20.Nr Semiconductor compounds
71.20.Ps Other inorganic compounds

Formation of amorphous interlayers by a solid‐state diffusion in Zr and Hf thin films on silicon

J. Y. Cheng and L. J. Chen

Appl. Phys. Lett. 56, 457 (1990); http://dx.doi.org/10.1063/1.102764 (3 pages) | Cited 34 times

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The formation of amorphous interlayers (a interlayers) in polycrystalline Zr and Hf thin films on single‐crystal (111)Si has been observed by cross‐sectional transmission electron microscopy. The growth of a interlayers in group IVa metal thin films on silicon was found to exhibit similar behavior but was fundamentally different from those of metal‐metal diffusion couples. The growth of a interlayers was found to follow a linear growth law initially then slowed down until a critical thickness was reached. Si was found to be the dominant diffusing species. Good correlation was found among the maximum thickness of the a interlayer, the difference in atomic size between metal and Si, the activation energy of the linear growth, and the largest heats of formation of the respective silicides.
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68.55.-a Thin film structure and morphology
61.43.Fs Glasses
61.43.-j Disordered solids
61.44.Br Quasicrystals
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination

Equilibrium critical thickness for Si1−xGex strained layers on (100) Si

D. C. Houghton, C. J. Gibbings, C. G. Tuppen, M. H. Lyons, and M. A. G. Halliwell

Appl. Phys. Lett. 56, 460 (1990); http://dx.doi.org/10.1063/1.102765 (3 pages) | Cited 48 times

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The critical thickness for Si1−xGex strained layers for the alloy range 0<x<0.15 has been determined from annealed epilayers using mapping techniques which allow single dislocation detection and composition thickness measurements over large areas (∼50 cm2 ). A series of Si1−xGex layers was deposited by molecular beam epitaxy in which the composition (x) and thickness (h) were continuously varied across the substrate to produce a slowly changing strain energy density through the stable/metastable transition. On annealing at either 750 or 900 °C for 30 min, an abrupt transition in relaxation behavior was found at critical values of thickness and composition (hc,xc ). Increasing the anneal temperature or time did not shift the transition giving identical (hc,xc ) values. At strain thicknesses above these critical values a large increase in defect density was observed (>∼104 , cm−2) whereas in thinner strained epilayers, below the thermodynamic stability curve, no misfit dislocations were found. Nomarski microscopy of defect etched surfaces and x‐ray topography were used to reveal misfit dislocations formed during the initial stages of relaxation. The appearance of single misfit dislocations at a density ≊1 cm−2 was taken as the criterion for a ‘‘relaxed’’ layer. The critical strain and thickness in the vicinity of these transition points were determined on the as‐grown wafer by x‐ray diffraction and Rutherford backscattering spectrometry with confirmation of layer thicknesses by cross‐sectional transmission electron microscopy. The Matthews–Blakeslee [J. Cryst. Growth 27, 118 (1974)] equilibrium critical thickness he (nm), vs Ge atom fraction curve given by xe =0.55/he  ln(4he /b) for 1/2 a0〈110〉, 60° glide dislocations with a Burgers vector b ∼0.4 nm, is an excellent fit to these experimental data, i.e., xc =xe and hc =he .
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.35.B- Structure of clean surfaces (and surface reconstruction)
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)

High carrier concentration in InP by Si+ and P+ dual implantations

Honglie Shen, Genqing Yang, Zuyao Zhou, and Shichang Zou

Appl. Phys. Lett. 56, 463 (1990); http://dx.doi.org/10.1063/1.102766 (3 pages) | Cited 11 times

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Dual implantations of 150 keV Si+ ions and 160 keV P+ ions with the same dose of 1×1015/ cm2 were performed at 200 °C. Si3 N4 encapsulated samples were annealed in a conventional furnace or a halogen tungsten lamp rapid thermal annealing system. The carrier concentration profiles show that the Si dopant is highly activated and its indiffusion is effectively reduced with the help of P+ implantation and rapid thermal annealing. The highest carrier concentration of 5×1019 /cm3 , corresponding to an activation of 70%, an average electron mobility of 750 cm2 /V s, and a sheet resistance of 11 Ω/☒, has been obtained in Si+ and P+ dually implanted InP after rapid thermal annealing at 850 °C for 5 s.
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61.72.U- Doping and impurity implantation
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
61.80.Jh Ion radiation effects
72.80.Ey III-V and II-VI semiconductors

A simple method for elimination of gallium‐source related oval defects in molecular beam epitaxy of GaAs

Naresh Chand

Appl. Phys. Lett. 56, 466 (1990); http://dx.doi.org/10.1063/1.102767 (3 pages) | Cited 2 times

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By evaporating gallium from an aluminum‐treated pBN crucible in a molecular beam epitaxy (MBE) system, ‘‘Ga spitting’’ and formation of Ga cell related oval defects have been eliminated. MBE GaAs layers as thick as 20 μm were totally free from the Ga cell related oval defects. Remaining defects were particulates or oval defects related to surface contamination and their densities were 100 and 500 cm−2 for 5 and 20‐μm‐thick layers of GaAs. The particulates‐related oval defects were, however, hardly seen when 4‐μm‐thick GaAs was grown on Si substrates. Aluminum wets and reacts with the pBN crucible when heated to 1300 °C. Condensed gallium near the orifice wets the aluminum‐treated surface. As a result, Ga droplets and related oval defects do not form. The method also avoids any gallium oxide in the Ga melt and provides a better outgassed pBN crucible. Contamination of the initial GaAs layers with Al was negligibly small with Al content x=0.0016 which reduced in subsequent layers. The results are presented for GaAs layers but the method should be equally applicable for evaporation of indium to prevent In‐related oval defects in In‐based compounds.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics
61.72.-y Defects and impurities in crystals; microstructure
81.15.Cd Deposition by sputtering

Antiphase‐domain‐free GaAs grown on pseudomorphic Si (100) surfaces by molecular beam epitaxy

K. Adomi, S. Strite, and H. Morkoç

Appl. Phys. Lett. 56, 469 (1990); http://dx.doi.org/10.1063/1.102768 (3 pages) | Cited 15 times

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GaAs has been grown on pseudomorphic Si (100) surfaces and (100) surfaces misoriented 4° toward [011] and [001] in order to study the quality of the GaAs on Si interface in the absence of misfit dislocations. We obtain completely two‐dimensional single‐domain GaAs epitaxy after only 80 Å of deposition as observed by in situ high‐energy electron diffraction. Transmission electron microscopy verifies that the GaAs grown on pseudomorphic Si is free of antiphase domains and other notable defects.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)

Influence of background doping and implant damage on the diffusion of implanted silicon in GaAs

J. J. Murray, M. D. Deal, and D. A. Stevenson

Appl. Phys. Lett. 56, 472 (1990); http://dx.doi.org/10.1063/1.102769 (3 pages) | Cited 4 times

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Diffusion of Si in GaAs is studied using implanted Si in undoped GaAs, implanted Si in Se‐, Si‐, and Zn‐doped GaAs, and grown‐in Si in epitaxial layer structures. No diffusion is observed in the undoped and Zn‐doped GaAs cases, a moderate level is observed in the Si‐doped case, and a significant amount is found for the Se‐doped and nonimplanted Si‐doped epitaxy cases. These results indicate that the diffusion is controlled by a Fermi level mechanism (probably via ionized gallium vacancies) and that implant damage inhibits diffusion by keeping the electron concentration and/or the ionized gallium vacancy concentration low.
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66.30.J- Diffusion of impurities

Electroabsorption effects in InxGa1−xAs/GaAs strained‐layer superlattices

S. Niki, A. L. Kellner, S. C. Lin, A. Cheng, A. R. Williams, W. S. C. Chang, and H. H. Wieder

Appl. Phys. Lett. 56, 475 (1990); http://dx.doi.org/10.1063/1.102770 (3 pages) | Cited 5 times

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Electroabsorption of strained‐layer Inx Ga1−x As/GaAs superlattice structures grown by molecular beam epitaxy on GaAs substrates was experimentally investigated. Its spectral characteristics were found to be similar to those of Franz–Keldysh electroabsorption of bulk semiconductor materials, and suggest that the widths of ground‐state electron and hole minibands might be larger than the maximum tilt of the potential well caused by an applied voltage. We attribute the electroabsorption of such superlattices to photon‐assisted tunneling between ground‐state electron and heavy hole minibands.
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78.20.Jq Electro-optical effects
42.79.-e Optical elements, devices, and systems
71.35.-y Excitons and related phenomena

Epitaxial growth of high‐mobility GaAs using tertiarybutylarsine and triethylgallium

G. Haacke, S. P. Watkins, and H. Burkhard

Appl. Phys. Lett. 56, 478 (1990); http://dx.doi.org/10.1063/1.102771 (3 pages) | Cited 24 times

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Epitaxial layers of nominally undoped GaAs have been grown by metalorganic chemical vapor deposition using liquid tertiarybutylarsine and triethylgallium. n‐type layers were obtained having total residual shallow acceptor concentrations of ∼1013 cm−3 and Hall mobilities comparable to those obtained with arsine and triethylgallium in the same reactor. Liquid‐nitrogen Hall mobilities up to 116 000 cm2 /V s were observed.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
72.80.Ey III-V and II-VI semiconductors
78.55.Cr III-V semiconductors

Microfabrication below 10 nm

B. P. Van der Gaag and A. Scherer

Appl. Phys. Lett. 56, 481 (1990); http://dx.doi.org/10.1063/1.102772 (3 pages) | Cited 27 times

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We describe a new method of producing ultrasmall structures on thick substrates with electron beam lithography. Using an innovative exposure technique, we obtain features with lateral sizes smaller than the incident beam diameter. These patterns are transferred into GaAs/AlGaAs quantum well heterostructures using chemically assisted ion beam etching, and uniform arrays of structures with lateral dimensions below 10 nm are produced. We employ reflection electron microscopy measurements to correlate the structure size with the exposure and development conditions for this fabrication scheme.
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85.40.Hp Lithography, masks and pattern transfer
85.60.-q Optoelectronic devices
85.30.-z Semiconductor devices
81.40.-z Treatment of materials and its effects on microstructure, nanostructure, and properties
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