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Appl. Phys. Lett. 56, 665 (1990); http://dx.doi.org/10.1063/1.102730 (3 pages)

Electronic analog of the electro‐optic modulator

Supriyo Datta and Biswajit Das

School of Electrical Engineering, Purdue University, West Lafayette, Indiana 47907

(Received 3 October 1989; accepted 5 December 1989)

We propose an electron wave analog of the electro‐optic light modulator. The current modulation in the proposed structure arises from spin precession due to the spin‐orbit coupling in narrow‐gap semiconductors, while magnetized contacts are used to preferentially inject and detect specific spin orientations. This structure may exhibit significant current modulation despite multiple modes, elevated temperatures, or a large applied bias.

RELATED DATABASES

KEYWORDS and PACS

PACS

  • 85.30.Tv

    Field effect devices

  • 42.79.Hp

    Optical processors, correlators, and modulators

  • 73.40.Kp

    III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

  • 71.70.Ej

    Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect

ARTICLE DATA

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

  1. See, for example, G. Timp, H. U. Baranger, P. deVegvar, J. E. Cunningham, R. E. Howard, R. Behringer, and P. M. Mankiewich, Phys. Rev. Lett. 60, 2081 (1988). [MEDLINE]
  2. F. Sols, M. Macucci, U. Ravaioli, and K. Hess, Appl. Phys. Lett. 54, 350 (1989APPLAB000054000004000350000001); [ISI]
    also Proceedings of the International Symposium on Nanostrucuture Physics and Fabrication, College Station, Texas, March 13–15, 1989, edited by M. A. Reed and W. P. Kirk (Academic, New York, 1989), p. 157; A. B. Fowler, Workshop on Quantum Interference, Atlanta, Sept. 1988.
  3. S. Datta, Superlatt. Microstruct. 6, 83 (1989); [Inspec] [ISI]
    D. C. Miller, R. Lake, S. Datta, M. S. Lundstrom, M. R. Melloch, and R. Reifenberger, in Proceedings of the International Symposium on Nanostructure Physics and Fabrication, College Station, Texas, March 13–15, 1989, edited by M. A. Reed and W. P. Kirk (Academic, New York, 1989), p. 165.
  4. M. Johnson and R. H. Silsbee, Phys. Rev. B 37, 5312 (1988). [MEDLINE]
  5. R. Meservey, D. Paraskevopoulos, and P. M. Tedrow, Phys. Rev. Lett. 37, 858 (1976).
  6. G. Lommer, F. Malcher, and U. Rössler, Phys. Rev. Lett. 60, 728 (1988). [MEDLINE]
  7. Y. A. Bychkov and E. I. Rashba, J. Phys. C 17, 6039 (1984)
    also Proceedings of the 17th International Conference on Physics and Semiconductors, San Francisco, Aug. 6–10, 1984 (Springer, New York, 1984), p. 321.
  8. J. Luo, H. Munekata, F. F. Fang, and P. J. Stiles, Phys. Rev. B 38, 10142 (1988). [MEDLINE]
  9. B. Das, D. C. Miller, S. Datta, R. Reifenberger, W. P. Hong, P. K. Bhattacharya, J. Singh, and M. Jaffe, Phys. Rev. B 39, 1411 (1989). [MEDLINE]
  10. B. Das, S. Datta, and R. Reifenberger (unpublished).
  11. C. J. B. Ford, T. J. Thornton, R. Newbury, M. Pepper, H. Ahmed, D. C. Peacock, D. A. Ritchie, J. E. F. Frost, and G. A. C. Jones, Appl. Phys. Lett. 54, 21 (1989APPLAB000054000001000021000001). [ISI]
  12. G. Bergmann, Solid State Commun. 42, 815 (1982). [Inspec] [ISI]



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