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19 Feb 1990

Volume 56, Issue 8, pp. 703-793

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Measurement of homogeneously broadened spectra of spontaneous emission and small‐signal gain in a low‐energy, waveguide‐mode free‐electron laser

Byung Cheol Lee, Yoshiyuki Kawamura, Koichi Toyoda, Masayuki Kawai, and Sang Soo Lee

Appl. Phys. Lett. 56, 703 (1990); http://dx.doi.org/10.1063/1.102687 (3 pages) | Cited 5 times

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The spontaneous emission spectrum and the small‐signal gain have been measured in a low‐energy, waveguide‐mode free‐electron laser. Measurements are carried out at microwave frequencies (25–40 GHz) in an X‐band rectangular waveguide with a low‐energy (450–600 keV, γ∼2), low‐current (∼1.5 A), low‐energy spread (ΔE/E≪10−4) relativistic photoelectron beam. The measured spontaneous emission spectrum agrees well with the homogeneously broadened spectrum of the TE10 waveguide mode. The measured small‐signal gain spectrum is in good agreement with the theoretical prediction calculated under the assumption of operation in the low‐gain Compton regime.
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41.60.Cr Free-electron lasers
52.59.Px Hard X-ray sources
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
41.75.Ht Relativistic electron and positron beams

Measurement of the carrier dependence of differential gain, refractive index, and linewidth enhancement factor in strained‐layer quantum well lasers

W. Rideout, B. Yu, J. LaCourse, P. K York, K. J. Beernink, and J. J. Coleman

Appl. Phys. Lett. 56, 706 (1990); http://dx.doi.org/10.1063/1.102688 (3 pages) | Cited 28 times

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Measurements of the variation of differential gain, refractive index, and linewidth enhancement factor with carrier density in InGaAs‐GaAs strained‐layer quantum well lasers are presented for the first time. These results verify predictions of improvement over unstrained bulk or quantum well lasers, but only at certain carrier densities. Differential gain (dg/dN) is found to vary from 7.0×10−16 to 2.5×10−16 cm2 over the range of carrier densities studied, while the carrier dependence of the real part of the refractive index (dn/dN) ranges from a peak of −2.8×10−20 down to −7.0×10−21 cm3. From these measurements the resulting linewidth enhancement factor (α) is found to vary from 5 to a minimum of 1.7. This information is critical to successfully exploiting the potential advantages of strained‐layer lasers for such devices as high‐frequency or narrow linewidth lasers.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Polymer microstructure waveguides on alumina and beryllium oxide substrates for optical inteconnection

Ray T. Chen, Michael R. Wang, and Tomasz Jannson

Appl. Phys. Lett. 56, 709 (1990); http://dx.doi.org/10.1063/1.103313 (3 pages) | Cited 7 times

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We report the first high quality optical waveguides (loss <1 dB/cm) on alumina and beryllium oxide substrates. The tunability of the polymer guiding layer refractive index is provided through a recently developed wet processing technique. This procedure changes the waveguide propagation loss from larger than 40 dB/cm to less than 1 dB/cm. Since alumina (Al2O3) and beryllium oxide (BeO) are the major substrates for hybrid mode microwave integrated circuits (HMMICs), realization of such waveguides is useful for optical interconnection and signal processing for HMMIC.
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81.65.-b Surface treatments
81.05.Kf Glasses (including metallic glasses)
52.80.Pi High-frequency and RF discharges
52.40.Hf Plasma-material interactions; boundary layer effects

Nonlinear optical properties of benzimidazobenzophenanthroline type ladder polymers

J. R. Lindle, F. J. Bartoli, C. A. Hoffman, O.‐K. Kim, Y. S. Lee, J. S. Shirk, and Z. H. Kafafi

Appl. Phys. Lett. 56, 712 (1990); http://dx.doi.org/10.1063/1.102689 (3 pages) | Cited 16 times

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Third‐order optical susceptibilities (χ(3)) of poly{(7‐oxo‐7, 10H‐benz[de]imidazo[4′,5′:5,6]benzimidazo [2,1‐a]isoquinoline‐3,4:10,11‐tetrayl)‐carbonyl}, referred to as BBL, and poly(6,9‐dihydro‐6,9‐dioxobisbenzimidazo[2,1b:1′,2′j] benzo[1mn]‐[3,8]phenanthroline‐3,12‐diyl), known as BBB, have been determined using the technique of degenerate four‐wave mixing (DFWM) at 1.064 μm. BBL has a χ(3)xxxx=(1.5±0.4)×10−11 esu, three times as large as that of BBB and 38 times as large as that of CS2. Electrochemical doping led to a small (<30%) increase in the third‐order susceptibility of BBL.
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78.66.Qn Polymers; organic compounds
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
81.40.Tv Optical and dielectric properties related to treatment conditions
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
81.65.-b Surface treatments

Observation of room‐temperature blue shift and bistability in a strained InGaAs‐GaAs 〈111〉 self‐electro‐optic effect device

K. W. Goossen, E. A. Caridi, T. Y. Chang, J. B. Stark, D. A. B. Miller, and R. A. Morgan

Appl. Phys. Lett. 56, 715 (1990); http://dx.doi.org/10.1063/1.102690 (3 pages) | Cited 74 times

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We have observed room‐temperature exciton blue shift with applied voltage in a 〈111〉 In0.1Ga0.9As‐GaAs p‐i‐n multiple quantum well modulator. We have also observed optically induced bistability in a symmetric self‐electro‐optic effect device circuit composed of these modulators. Very large (2.5:1) ratios of photocurrent were obtained with only 0–3 V applied bias.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
42.79.Hp Optical processors, correlators, and modulators
73.50.Pz Photoconduction and photovoltaic effects
42.65.Pc Optical bistability, multistability, and switching, including local field effects

Nonlinear optical properties of p‐substituted benzalbarbituric acids

K. Kondo, S. Ochiai, K. Takemoto, and M. Irie

Appl. Phys. Lett. 56, 718 (1990); http://dx.doi.org/10.1063/1.102691 (1 page) | Cited 2 times

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A number of p‐substituted benzalbarbituric acid derivatives were synthesized by the reaction of p‐substituted benzaldehyde with barbituric acid, and their nonlinear optical properties were investigated by using the Kurtz powder test. p‐acetamidobenzalbarbituric acid derivatives were found to exhibit the relatively high second‐harmonic intensity and have the higher thermal stability.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.66.Qn Polymers; organic compounds

Formation and decay of metastable fluorine atoms in pulsed fluorocarbon/oxygen discharges monitored by laser‐induced fluorescence

S. G. Hansen, G. Luckman, George C. Nieman, and Steven D. Colson

Appl. Phys. Lett. 56, 719 (1990); http://dx.doi.org/10.1063/1.102692 (3 pages) | Cited 7 times

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The temporal profiles of metastable F(4 P3/2) and Ar(1s5) and emitting F(4D05/2 ) and Ar(2p2) in a sharp‐edged, pulsed CF4/O2/Ar (87.5/10.4/2.1) discharge are discussed. All four states are so short lived that there is no net accumulation during the discharge pulse and the profiles merely reflect the formation rate. For Ar, electron impact on the ground state leads to both excited states. Their similar profiles mirror the electron excitation function. For excited F, two channels are open: electron impact on CF4, and electron impact on ground‐state F which accumulates during the discharge pulse. The fact that metastable F is rapidly quenched in the gas phase indicates that it is not a major etchant of silicon or silicon nitride as was recently suggested in the literature.
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68.55.-a Thin film structure and morphology

Generation of highly vibrationally excited H2 and detection by 2+1 resonantly enhanced multiphoton ionization

Daniel C. Robie, Leonard E. Jusinski, and William K. Bischel

Appl. Phys. Lett. 56, 722 (1990); http://dx.doi.org/10.1063/1.102693 (3 pages) | Cited 6 times

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We report the first detection by optical means of highly vibrationally excited H2 X1Σ+g(vx=6–11). Vibrationally excited H2 was generated using a recently discovered hot‐wire effect in H2 gas, and was detected in 40 bands with 2+1 resonantly enhanced multiphoton ionization via the EF state (vEF=0–14). Rotational temperatures are in the range 200–650 K, well below that required for thermal excitation of the observed vibrational levels.
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68.55.-a Thin film structure and morphology

Dependence of thermal stability of the titanium silicide/silicon structure on impurities

Shin‐ichi Ogawa, Takehito Yoshida, and Takashi Kouzaki

Appl. Phys. Lett. 56, 725 (1990); http://dx.doi.org/10.1063/1.103314 (3 pages) | Cited 17 times

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The effect of impurity on the thermal stability of titanium silicide (TiSi2)/single‐crystal silicon (Si) structures has been studied. It is found that nitrogen and oxygen in the TiSi2 film significantly influence the morphological changes of a TiSi2/Si structure during high‐temperature annealing at 1100 °C for 2–20 s. Nitrogen impurity improves the thermal stability of the TiSi2/Si structure, whereas oxygen degrades it.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.60.Dv Thermal stability; thermal effects
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.55.-a Thin film structure and morphology

Range of slow positrons in metal overlayers on Al

Bent Nielsen, K. G. Lynn, T. C. Leung, G. J. Van der Kolk, and L. J. Van Ijzendoorn

Appl. Phys. Lett. 56, 728 (1990); http://dx.doi.org/10.1063/1.102694 (3 pages) | Cited 7 times

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Polycrystalline Pd and amorphous PdTa films on Al substrates were studied by a variable energy positron beam and by Rutherford backscattering. Since positron diffusion in the overlayers is limited, the range follows directly from the Doppler broadening as a function of incident positron energy. To observe possible effects of positron backscattering, a sandwich of Al/Pd/Al was studied as well. It was found that the mean penetration depth is not described well by math(E)=A(μg/cm2)×En(E), if A and n are assumed to be material and energy independent.
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68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
68.55.-a Thin film structure and morphology
78.70.-g Interactions of particles and radiation with matter
73.61.At Metal and metallic alloys

Ordering in semiconductor alloys

J. E. Bernard, R. G. Dandrea, L. G. Ferreira, S. Froyen, S.‐H. Wei, and A. Zunger

Appl. Phys. Lett. 56, 731 (1990); http://dx.doi.org/10.1063/1.102695 (3 pages) | Cited 32 times

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A thermodynamic first‐principles theory of stability, including charge transfer, elastic forces, and atomic relaxations reveals the physical origins of stable and metastable ordering in bulk and epitaxial semiconductor alloys and superlattices.
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64.60.Cn Order-disorder transformations

On the feasibility of growing dilute CxSi1−x epitaxial alloys

J. B. Posthill, R. A. Rudder, S. V. Hattangady, G. G. Fountain, and R. J. Markunas

Appl. Phys. Lett. 56, 734 (1990); http://dx.doi.org/10.1063/1.102696 (3 pages) | Cited 48 times

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Dilute CxSi1−x epitaxial films have been grown on Si(100) by remote plasma‐enhanced chemical vapor deposition. Carbon concentrations of ∼3 at.% have been achieved at a growth temperature of 725 °C. No evidence for the formation or precipitation of SiC was found using x‐ray diffraction and transmission electron microscopy.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.65.-b Surface treatments
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Wafer fusion: A novel technique for optoelectronic device fabrication and monolithic integration

Z. L. Liau and D. E. Mull

Appl. Phys. Lett. 56, 737 (1990); http://dx.doi.org/10.1063/1.102697 (3 pages) | Cited 96 times

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Centimeter‐size single‐crystal InP or GaAs wafers have been fused together entirely, face to face or side by side, after a heat treatment in a graphite/quartz reactor which can press the wafers together through differential thermal expansion. Diodes formed by fusing p‐ and n‐type wafers showed normal current‐voltage characteristics and light emission. Fusion between lattice‐mismatched wafers (i.e., InP and GaAs) has also been demonstrated.
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68.55.-a Thin film structure and morphology

AlxGa1−xAs‐GaAs vertical‐cavity surface‐emitting laser grown on Si substrate

D. G. Deppe, Naresh Chand, J. P. van der Ziel, and G. J. Zydzik

Appl. Phys. Lett. 56, 740 (1990); http://dx.doi.org/10.1063/1.102698 (3 pages) | Cited 20 times

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Data are presented demonstrating room‐temperature operation of AlxGa1−xAs‐GaAs vertical‐cavity surface‐emitting lasers grown on Si substrates. The device structures are grown using molecular beam epitaxy and a grown‐in quarter‐wave AlAs‐GaAs stack is used as the n‐side reflector and a nonalloyed Ag dot used as the p‐side reflector/contact. Pulsed threshold currents of ∼125 mA are obtained for a 15‐μm‐diam device.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Scanning tunneling microscopy of [112] oriented steps on a cleaved Si(111) surface

Hiroshi Tokumoto, Shigeru Wakiyama, Kazushi Miki, and Shigeo Okayama

Appl. Phys. Lett. 56, 743 (1990); http://dx.doi.org/10.1063/1.102699 (3 pages) | Cited 5 times

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Scanning tunneling microscopy on cleaved Si(111) surfaces reveals stress‐induced microstructures with two types of terraces: triangular‐shaped terraces and long and narrow terraces with parallel [112] oriented steps, which is contrary to the previous observation [112] steps. Dimer rows in Si(111) 2×1 structures are found on the triangular terraces. On the parallel‐stepped terraces, rows run in the [112] direction and their separation was appreciably smaller than that of the dimer rows in the 2×1 structure. A new model for this structure is proposed.
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68.55.-a Thin film structure and morphology

Intersubband absorption in highly strained InGaAs/InAlAs multiquantum wells

Hiromitsu Asai and Yuichi Kawamura

Appl. Phys. Lett. 56, 746 (1990); http://dx.doi.org/10.1063/1.102700 (3 pages) | Cited 33 times

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Highly strained In0.66 Ga0.34 As/In0.30 Al0.70 As multiquantum wells (MQWs) are successfully grown on (001)InP substrates by moleular beam epitaxy. Good crystal quality in the strained MQWs is confirmed by clear excitonic peaks and sharp photoluminescence spectra. Intersubband absorption at a wavelength as short as 3.1 μm was obtained for the first time in uniformly Si‐doped strained MQWs.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Role of native oxide layers in the patterning of InP by Ga ion beam writing and ion beam assisted Cl2 etching

Y. L. Wang, L. R. Harriott, R. A. Hamm, and H. Temkin

Appl. Phys. Lett. 56, 749 (1990); http://dx.doi.org/10.1063/1.102701 (3 pages) | Cited 14 times

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We have studied the mechanism of increased etch rate induced in InP substrates by focused Ga ion implantation and Cl2 etching. We cannot account for the depth of surface steps formed in this process with a purely kinetic mechanism. The preferential etching of implanted areas is attributed instead to local modification or removal of native oxides from the surface of InP. The thin oxide layer effectively protects the substrate and inhibits Cl2 etching. Consistent with the thermodynamic prediction, a cleaned InP(100) surface is etched by Cl2 (5×10−4 Torr) with a rate of approximately 1000 Å/min at 200 °C. Surface steps as deep as 3 μm have been reproducibly prepared using an oxide mask believed to be approximately 20 Å thick. In the etching process, any substrate damage caused by the Ga beam writing is completely removed. The oxide mask, which can be patterned on a very fine scale by energetic particle bombardment, provides a new avenue for in situ processing of InP.
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68.55.-a Thin film structure and morphology

Residual acceptor impurities in undoped high‐purity InP grown by metalorganic chemical vapor deposition

S. S. Bose, I. Szafranek, M. H. Kim, and G. E. Stillman

Appl. Phys. Lett. 56, 752 (1990); http://dx.doi.org/10.1063/1.102702 (3 pages) | Cited 7 times

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Zn and an unidentified acceptor species, labeled A1, are the only residual acceptors that have been observed in a wide variety of undoped high‐purity InP samples grown by metalorganic chemical vapor deposition. Carbon is not incorporated at detectable concentrations as a residual acceptor in metalorganic chemical vapor deposited InP. However, the longitudinal and transverse optical phonon replicas of the free‐exciton recombination occur at the same energy as the donor/conduction band‐to‐acceptor peaks for C acceptors in low‐temperature photoluminescence spectra. Since these replicas are usually present in photoluminescence spectra measured under moderate or high optical excitation, care must be exercised so that these peaks are not misinterpreted as C‐related transitions.
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73.20.Hb Impurity and defect levels; energy states of adsorbed species
78.55.Cr III-V semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Low‐voltage electron beam lithography with a scanning tunneling microscope

C. R. K. Marrian and R. J. Colton

Appl. Phys. Lett. 56, 755 (1990); http://dx.doi.org/10.1063/1.102703 (3 pages) | Cited 19 times

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Studies of a polydiacetylene negative electron beam resist have been made in a scanning tunneling microscope operated in vacuum at pressures in the 10−8 Torr range. The resist can be imaged if it is applied as a thin film to a conductive flat substrate and the tip bias voltage is chosen appropriately. An exposure threshold energy close to 8 eV has been observed for the formation of raised features in the resist. A minimum feature size of about 20 nm has been measured when written at an energy just above the exposure threshold. Details of the necessary substrate preparation are described together with the operation of the scanning tunneling microscope during imaging and exposure. The exposure dose is applied by raising the bias voltage for a specific time while keeping the tip‐sample current constant which has permitted insights into the mechanisms of the resist exposure.
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85.40.Hp Lithography, masks and pattern transfer
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
81.65.-b Surface treatments
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
07.78.+s Electron, positron, and ion microscopes; electron diffractometers

Strain‐induced two‐dimensional electron gas in [111] growth‐axis strained‐layer structures

E. S. Snow, B. V. Shanabrook, and D. Gammon

Appl. Phys. Lett. 56, 758 (1990); http://dx.doi.org/10.1063/1.102704 (3 pages) | Cited 32 times

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It is demonstrated that strain‐induced electric fields in [111] growth‐axis strained‐layer structures can be used to induce a two‐dimensional electron gas without the necessity of modulation doping. A simple analytic expression is derived for the density of the two‐dimensional electron gas. The density has a simple linear relationship to the strain‐induced electric fields. The calculation predicts that two‐dimensional densities in the range 1011–1012 cm−2 should be easily realized in strained‐layer structures. Results are calculated for a variety of material systems.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
85.30.Tv Field effect devices
77.65.-j Piezoelectricity and electromechanical effects

Deep levels in GaAs grown on Si during rapid thermal annealing

Hoon Young Cho, Eun Kyu Kim, Yong Kim, Suk‐Ki Min, Ju Hoon Yoon, and Sung Ho Choh

Appl. Phys. Lett. 56, 761 (1990); http://dx.doi.org/10.1063/1.102705 (3 pages) | Cited 1 time

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Deep levels in GaAs on Si substrates grown by metalorganic chemical vapor deposition (MOCVD) were studied during infrared rapid thermal annealing. For GaAs layers on Si after annealing at 850 °C for 20 s, three electron deep levels at 0.36, 0.27, and 0.20 eV below the conduction band were created as the dominant deep levels. Especially, the 0.36 eV level was found to increase up to 40% of the donor concentration as the thickness of Si substrates increased. These results indicate that rapid thermal annealing of GaAs on Si may induce high‐density deep levels due to a biaxial tensile stress caused by the difference in thermal expansion coefficients.
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71.55.Eq III-V semiconductors
61.72.Bb Theories and models of crystal defects
68.35.Dv Composition, segregation; defects and impurities

Photoluminescence of the D lines in silicon containing a high concentration of carbon after a two‐step isochronal anneal

W. Wijaranakula, H. Mollenkopf, and J. H. Matlock

Appl. Phys. Lett. 56, 764 (1990); http://dx.doi.org/10.1063/1.102707 (3 pages) | Cited 2 times

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Photoluminescence at the photon energies of 0.808 and 0.874 eV was observed in silicon containing a high concentration of carbon after a two‐step isochronal anneal. The annealing sequence consisted of a low‐temperature isochronal anneal and a 1050 °C anneal, respectively. The observed luminescence had the photon energies corresponding to those of the D lines which are known to arise from the interstitial‐type dislocation loops. In silicon containing a high concentration of carbon, a formation of the dislocation loops was hypothesized to occur via a condensation of the excess silicon interstitials, originated from the agglomerates of interstitial carbons.
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61.72.Bb Theories and models of crystal defects
71.55.Ht Other nonmetals
78.55.Hx Other solid inorganic materials
61.72.jd Vacancies
61.72.jj Interstitials

Optimum Si‐Si1−xGex structures with strong infrared spectra

R. J. Turton and M. Jaros

Appl. Phys. Lett. 56, 767 (1990); http://dx.doi.org/10.1063/1.102708 (3 pages) | Cited 10 times

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We have identified symmetrically strained Si‐Si1−xGex superlattices with optimum strength infrared spectra in the range 50–300 meV. The growth structure parameters required for implementing such systems are provided.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.30.Fs III-V and II-VI semiconductors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Mid‐infrared detectors in the 3–5 μm band using bound to continuum state absorption in InGaAs/InAlAs multiquantum well structures

G. Hasnain, B. F. Levine, D. L. Sivco, and A. Y. Cho

Appl. Phys. Lett. 56, 770 (1990); http://dx.doi.org/10.1063/1.103186 (3 pages) | Cited 41 times

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Medium wavelength infrared (MWIR) detectors in the 3–5 μm band are demonstrated using bound to continuum state intersubband absorption in lattice‐matched InGaAs/InAlAs multiquantum well (MQW) structures. Photodetectors with responsivity peaked at 4 μm wavelength showed low dark current giving a background‐limited detectivity D@B|BL =2.3×1010 cm(Hz)1/2 /W at temperatures up to 120 K.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
73.50.Pz Photoconduction and photovoltaic effects
73.61.Ey III-V semiconductors

Theory of millimeter wave nonlinearities in semiconductor superlattices

Juan F. Lam, Bob D. Guenther, and David D. Skatrud

Appl. Phys. Lett. 56, 773 (1990); http://dx.doi.org/10.1063/1.102709 (3 pages) | Cited 10 times

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A study of the impact of semiconductor superlattices on millimeter wave nonlinearities is reported. χ(3) as large as 10−2 esu can be achieved by using 250 GHz radiation. Self‐induced transparency is also predicted, and its competition with the third‐harmonic generation process is quantified.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
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