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3 Sep 1990

Volume 57, Issue 10, pp. 951-1069

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Net gain in photorefractive InP:Fe at λ=1.32 μm without an applied field

J. Strait, J. D. Reed, A. Saunders, G. C. Valley, and M. B. Klein

Appl. Phys. Lett. 57, 951 (1990); http://dx.doi.org/10.1063/1.103522 (3 pages) | Cited 2 times

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We have observed two‐beam coupling gain (0.273 cm−1) that exceeds absorption (0.145 cm−1) in InP:Fe without applying an external field at λ=1.32 μm. Measurements of the gain coefficient as a function of grating spacing fit the photorefractive theory for simultaneous electron‐hole transport, with the effective density of traps NE = (3.86 ± 1.1)NE=(3.86±1.1)× 1015 cm−3 and ξ, the factor that accounts for competition between electrons and holes, equaling −0.729±0.026. Absorption measurements, combined with the photoionization cross sections of electrons and holes, confirm these results. The agreement between theory and experiment suggests how to choose impurity concentrations that optimize net gain.
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78.20.Jq Electro-optical effects
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
42.70.-a Optical materials

Isoelectronic bound exciton emission from Si‐rich silicon‐germanium alloys

R. A. Modavis, D. G. Hall, J. Bevk, B. S. Freer, L. C. Feldman, and B. E. Weir

Appl. Phys. Lett. 57, 954 (1990); http://dx.doi.org/10.1063/1.103523 (3 pages) | Cited 13 times

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We report the observation and characterization of luminescence in the wavelength range 1.1 μm<λ< 1.4 μm from silicon‐rich silicon‐germanium alloys, grown by molecular beam epitaxy, implanted with beryllium atoms. The luminescence originates with the radiative decay of an exciton bound to an isoelectronic impurity complex. The wavelength of this emission can be controlled by varying the Ge concentration.
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71.35.-y Excitons and related phenomena
79.60.Jv Interfaces; heterostructures; nanostructures
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Confinement of light hole valence‐band states in pseudomorphic InGaAs/Ga(Al)As quantum wells

J.‐P. Reithmaier, R. Höger, H. Riechert, P. Hiergeist, and G. Abstreiter

Appl. Phys. Lett. 57, 957 (1990); http://dx.doi.org/10.1063/1.103524 (3 pages) | Cited 17 times

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Pseudomorphic InGaAs/Ga(Al)As multiple quantum well structures with In content ranging from 7% to 25% and barriers with and without Al were grown by molecular beam epitaxy and investigated by optical absorption spectroscopy and photoluminescence excitation spectroscopy with linearly polarized light. A comparison of the absorption spectra between samples with and without Al content in the barriers shows that the light hole state is weakly bound in the InGaAs/GaAs quantum well at least for the lower In concentrations. Photoluminescence excitation with different linear polarization definitely distinguishes between the optical transitions of heavy or light hole to electron transitions. Several weak additional peaks appear in the spectra which are identified as forbidden optical transitions.
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78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
73.61.Ey III-V semiconductors

Broadband magneto‐optic waveguide isolator

R. Wolfe, J. F. Dillon, R. A. Lieberman, and V. J. Fratello

Appl. Phys. Lett. 57, 960 (1990); http://dx.doi.org/10.1063/1.103525 (3 pages) | Cited 23 times

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Isolation ratios between −32 and −37 dB have been measured on a magneto‐optic waveguide isolator over a wavelength range from 1.43 to 1.58 μm. This tunable broadband operation was achieved by rotating the input polarization angle by 22.5° from the waveguide surface of a 45° Faraday rotator to overcome the harmful effects of moderate linear birefringence. The output polarizer was then rotated to maximize the isolation ratio at each wavelength. The excess forward loss introduced by this procedure was 10% or less over this wavelength range. It is shown that excellent isolation and moderate excess forward loss (1 dB or less) can be achieved with triple garnet film, single‐mode ridge waveguides over a wavelength range of ±0.2 μm around the etch‐tuned wavelength, and over a temperature range of ±30 °C, which greatly enhances the usefulness of these waveguide isolators.
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78.20.Ls Magneto-optical effects
78.20.Bh Theory, models, and numerical simulation
42.79.Gn Optical waveguides and couplers
85.70.Sq Magnetooptical devices

Generation of picosecond pulses with a gain‐switched GaAs surface‐emitting laser

J. R. Karin, L. G. Melcer, R. Nagarajan, J. E. Bowers, S. W. Corzine, P. A. Morton, R. S. Geels, and L. A. Coldren

Appl. Phys. Lett. 57, 963 (1990); http://dx.doi.org/10.1063/1.103526 (3 pages) | Cited 15 times

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Pulses shorter than 4 ps (deconvolved) have been obtained by optically gain switching a GaAs multiple quantum well vertical‐cavity surface‐emitting laser with a picosecond dye laser. Pulse width and relative peak delay were measured as a function of pump power. A theoretical model of the large signal response agrees well with the measured data. The model predicts the minimum achievable pulse width and pulse delay for this device structure. Experimental results and calculated values indicate that very high modulation rates are possible with vertical‐cavity surface‐emitting lasers.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.Fc Modulation, tuning, and mode locking
42.60.By Design of specific laser systems
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Half‐ring geometry quantum well GaAlAs lasers

Nadav Bar‐Chaim, Kam Y. Lau, M. A. Mazed, Michael Mittelstein, Se Oh, Jeffrey E. Ungar, and Israel Ury

Appl. Phys. Lett. 57, 966 (1990); http://dx.doi.org/10.1063/1.103527 (2 pages) | Cited 2 times

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Half‐ring geometry single quantum well GaAlAs lasers have been fabricated. These lasers rely on a single cleave to obtain both resonator end reflectors. Using a buried‐heterostructure waveguide for lateral confinement and a high reflectivity facet coating, threshold currents as low as 14.5 mA and a frequency response extending to 6.5 GHz have been achieved.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.50.Nn Quantum optical phenomena in absorbing, amplifying, dispersive and conducting media; cooperative phenomena in quantum optical systems
42.81.Qb Fiber waveguides, couplers, and arrays

Dynamic and static response of multielectrode lasers

J. O’Gorman, A. F. J. Levi, R. N. Nottenburg, T. Tanbun‐Ek, and R. A. Logan

Appl. Phys. Lett. 57, 968 (1990); http://dx.doi.org/10.1063/1.103528 (3 pages) | Cited 12 times

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We compare the measured and calculated light output of a semiconductor laser modulated by a saturable intracavity absorber. An accurate description of the dynamic and static behavior requires inclusion of both a carrier concentration dependent recombination rate and a voltage‐dependent saturable absorption.
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42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers
42.65.Pc Optical bistability, multistability, and switching, including local field effects

High peak power picosecond pulse generation from AlGaAs external cavity mode‐locked semiconductor laser and traveling‐wave amplifier

P. J. Delfyett, C.‐H. Lee, G. A. Alphonse, and J. C. Connolly

Appl. Phys. Lett. 57, 971 (1990); http://dx.doi.org/10.1063/1.103529 (3 pages) | Cited 14 times

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Thin active region single stripe aluminum gallium arsenide traveling‐wave amplifiers have been used to generate and amplify 15 ps optical pulses to nearly 50 mW average powers and to peak powers in excess of 3 W. No appreciable temporal pulse distortion is observed after amplification. These peak power levels should prove to be sufficient to induce nonlinear optical effects in fibers.
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42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Intensity noise reduction in semiconductor lasers by amplitude‐phase decorrelation

Kerry J. Vahala and Michael A. Newkirk

Appl. Phys. Lett. 57, 974 (1990); http://dx.doi.org/10.1063/1.103530 (3 pages) | Cited 6 times

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Detuned operation of a laser results in coupling of field amplitude and phase fluctuations. In a semiconductor laser, this coupling is known to be very large. We demonstrate that it can be used to significantly reduce intensity noise below its intrinsic limit.
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42.60.Fc Modulation, tuning, and mode locking
42.30.Lr Modulation and optical transfer functions
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Phase‐matched second‐harmonic generation in a polymer waveguide

G. Khanarian, R. A. Norwood, D. Haas, B. Feuer, and D. Karim

Appl. Phys. Lett. 57, 977 (1990); http://dx.doi.org/10.1063/1.103531 (3 pages) | Cited 64 times

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Quasi‐phase‐matched second‐harmonic generation has been observed in a periodically poled nonlinear optical polymer waveguide. Key elements in this demonstration include novel nonlinear optical polymers that can be spin coated, the design and fabrication of periodic electrodes for periodic poling and the optimization of waveguide parameters to obtain single‐mode waveguides with a large overlap between fundamental and harmonic modes. Phase matching of the d33 nonlinear optical coefficient occurs over a distance L=230 μm.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.-a Optical materials
42.79.Gn Optical waveguides and couplers
78.20.-e Optical properties of bulk materials and thin films

Measurements of noncritically phase‐matched second‐harmonic generation in a LiB3O5 crystal

T. Ukachi, R. J. Lane, W. R. Bosenberg, and C. L. Tang

Appl. Phys. Lett. 57, 980 (1990); http://dx.doi.org/10.1063/1.104275 (3 pages) | Cited 22 times

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The characteristic properties of noncritically phase‐matched second‐harmonic generation in lithium triborate (LiB3O5, LBO) are investigated. Using a LBO crystal grown in our laboratory, we demonstrate that temperature‐tuned noncrictical phase‐matched second‐harmonic generation from 1.025 to 1.253 μm is achieved in a temperature range from 190 to −3 °C. The noncritical phase‐matching temperature for 1.064 μm radiation is found to be 148.0±0.5 °C with a temperature acceptance bandwidth of 3.9 °C cm.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.-a Optical materials
78.20.-e Optical properties of bulk materials and thin films

Microscopic and macroscopic uniformity control in plasma etching

Konstantinos P. Giapis, Geoffrey R. Scheller, Richard A. Gottscho, William S. Hobson, and Yong H. Lee

Appl. Phys. Lett. 57, 983 (1990); http://dx.doi.org/10.1063/1.103532 (3 pages) | Cited 17 times

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By cooling substrates to low temperatures (−40 °C), plasma etching of AlGaAs/AlAs/GaAs structures is performed in an ion‐activated, surface reaction limited regime. As a result, microscopic and macroscopic uniformity are vastly improved and etching is independent of gas flow patterns, plasma geometry, and reactor loading. Because the reactant is concentrated on the surface, etching rates remain large.
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81.65.-b Surface treatments
82.33.Xj Plasma reactions (including flowing afterglow and electric discharges)
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Nematic liquid crystal modulator with response time less than 100 μs at room temperature

Shin‐Tson Wu

Appl. Phys. Lett. 57, 986 (1990); http://dx.doi.org/10.1063/1.103533 (3 pages) | Cited 32 times

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A high‐speed nematic liquid crystal modulator with response time less than 100 μs at room temperature was demonstrated. The effects that contribute to the observed high speed are the transient nematic effect, a new liquid crystal mixture, and a holding voltage technique.
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42.79.Hp Optical processors, correlators, and modulators
78.20.Jq Electro-optical effects

Measurement of giant magnetic anisotropy in a uranium compound

G. H. Lander, M. S. S. Brooks, B. Lebech, P. J. Brown, O. Vogt, and K. Mattenberger

Appl. Phys. Lett. 57, 989 (1990); http://dx.doi.org/10.1063/1.103534 (3 pages) | Cited 11 times

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We report the measurement of an anisotropy constant ‖K1‖∼1010 ergs/cm3 in the cubic uranium compound US at 0 K. This is over an order of magnitude greater than that in TbFe2, which has the largest known K1 of a cubic material. A novel method using the scattering of thermal neutrons has been used to determine K1. This measurement, together with our increased understanding of the interactions of 5f  electron materials, has some practical implications for magnetic devices.
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75.30.Gw Magnetic anisotropy
75.50.Ee Antiferromagnetics

Charge density waves of 1T‐TaS2 imaged by atomic force microscopy

R. C. Barrett, J. Nogami, and C. F. Quate

Appl. Phys. Lett. 57, 992 (1990); http://dx.doi.org/10.1063/1.103535 (3 pages) | Cited 17 times

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The layer‐structure transition‐metal dichalcogenide 1T‐TaS2 has been imaged in air at room temperature by atomic force microscopy (AFM). The images reveal both the atomic lattice and the periodic lattice distortion (PLD) associated with the charge density wave. The PLD period, orientation relative to the atomic lattice, and amplitude all agree with diffraction measurements. Under different imaging conditions the PLD can appear with a large amount of disorder or as a near‐perfect superlattice. This difference is attributed to the tip‐sample interaction. Simultaneous force and current images are shown that demonstrate the different imaging mechanisms of scanning tunneling microscopy and AFM.
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71.45.Lr Charge-density-wave systems
68.35.B- Structure of clean surfaces (and surface reconstruction)
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination

Hertzian stress contribution to low friction behavior of thin MoS2 coatings

I. L. Singer, R. N. Bolster, J. Wegand, S. Fayeulle, and B. C. Stupp

Appl. Phys. Lett. 57, 995 (1990); http://dx.doi.org/10.1063/1.104276 (3 pages) | Cited 75 times

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Friction coefficients were measured for bearing materials slid in dry air against sputter‐deposited MoS2‐coated substrates. Ball versus flat tests were performed over a wide range of initial Hertzian pressures (200–1500 MPa) by varying loads (1–50 N), elastic moduli (70–615 GPa), and ball diameters (1.6–12.7 mm). The friction coefficient μ decreased as load L increased according to μ∝ L(−0.32), in agreement with the Hertzian contact model. Regression analysis of over 600 data points for friction coefficient versus Hertzian pressure (PH), fitted to μ=(S0/PH)+α, gave mean values of the shear strength S0=24.8 MPa±0.5 and α= 0.001±0.001, with S0 in good agreement with values in the literature.
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81.40.Pq Friction, lubrication, and wear
68.60.Bs Mechanical and acoustical properties
68.35.Gy Mechanical properties; surface strains
81.70.-q Methods of materials testing and analysis

Enhanced slow positron reemission with new thin foil moderator geometry

Xiao‐ye Wu, Peter Dull, and K. G. Lynn

Appl. Phys. Lett. 57, 998 (1990); http://dx.doi.org/10.1063/1.103536 (3 pages) | Cited 2 times

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By using an inverted tungsten cone in front of a tungsten (110) thin foil moderator to backscatter the fast positrons transmitted through the foil moderator, it was found that the slow positron yield can be increased by approximately a factor of 2. The energy width of the slow positrons in the axial direction was narrowed. The highest improvement in the moderator efficiency was ∼143%.
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68.35.Fx Diffusion; interface formation
73.50.Bk General theory, scattering mechanisms
73.61.At Metal and metallic alloys
78.70.Bj Positron annihilation

Effects of Peierls barrier and epithreading dislocation orientation on the critical thickness in heteroepitaxial structures

D. Chidambarrao, G. R. Srinivasan, B. Cunningham, and C. S. Murthy

Appl. Phys. Lett. 57, 1001 (1990); http://dx.doi.org/10.1063/1.103548 (3 pages) | Cited 20 times

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We have extended the mechanical equilibrium theory of J. W. Matthews and A. E. Blakeslee [J. Cryst. Growth 27, 118 (1974)] (MB) for determining the critical thickness in semiconducting heteroepitaxial films by including the effect of the Peierls barrier. The new formulation allows an evaluation of the dependence of critical thickness on the orientation of epithreading dislocation, and a comparison of theoretical predictions with measurements indicates that a knowledge of the epithreading dislocation orientation is necessary in predicting critical thicknesses in heteroepitaxial structures. In this formulation, the effect of the Peierls barrier is to bring the theoretical critical thicknesses closer to experimental values as compared to the predictions of the MB theory.
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68.55.-a Thin film structure and morphology
68.35.Gy Mechanical properties; surface strains
73.50.Bk General theory, scattering mechanisms
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Impulsive excitation of coherent phonons observed in reflection in bismuth and antimony

T. K. Cheng, S. D. Brorson, A. S. Kazeroonian, J. S. Moodera, G. Dresselhaus, M. S. Dresselhaus, and E. P. Ippen

Appl. Phys. Lett. 57, 1004 (1990); http://dx.doi.org/10.1063/1.104090 (3 pages) | Cited 74 times

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We report time domain observations of coherent lattice vibrations in bismuth and antimony. Phonons are impulsively generated, and detected through reflectivity modulation with 70 fs pulses of laser light at 1.98 eV. With this technique, we demonstrate that coherent lattice oscillations can be studied by reflection in opaque materials, but with selection rules which may differ from conventional impulsive stimulated Raman scattering.
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63.20.D- Phonon states and bands, normal modes, and phonon dispersion
63.20.Pw Localized modes
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Optical properties of diamond at pressures of the center of Earth

Yogesh K. Vohra, Hui Xia, Huan Luo, and Arthur L. Ruoff

Appl. Phys. Lett. 57, 1007 (1990); http://dx.doi.org/10.1063/1.103549 (3 pages) | Cited 18 times

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The optical properties of type Ia natural diamond were investigated to 364±9 GPa in a diamond anvil cell. The pressures were measured by x‐ray diffraction on tungsten sample using a synchrotron x‐ray source. The secondary absorption edge of diamond decreased from its ambient value of 3.7 to 2.5 eV at 364 GPa. The visible diamond luminescence at pressures above 300 GPa is different from the characteristic red luminescence of type Ib synthetic diamond. These are the first optical and structural observations at calibrated static pressures exceeding the pressure at the center of Earth.
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62.50.-p High-pressure effects in solids and liquids
78.55.Hx Other solid inorganic materials
78.40.Ha Other nonmetallic inorganics

Electrical characteristics of ultrathin oxynitride gate dielectric prepared by rapid thermal oxidation of Si in N2O

Hyunsang Hwang, Wenchi Ting, Bikas Maiti, Dim‐Lee Kwong, and Jack Lee

Appl. Phys. Lett. 57, 1010 (1990); http://dx.doi.org/10.1063/1.103550 (2 pages) | Cited 120 times

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This letter presents a unique process to grow high quality ultrathin (∼60 Å) gate dielectrics using N2O (nitrous oxide) gas. Compared with conventional rapid thermally grown oxide in the O2, the new oxynitride dielectrics show very large charge‐to‐breakdown (at +50 mA/cm2, 850 C/cm2 for oxynitride compared to 95 C/cm2 for the control thermal oxide) and less charge trapping under constant current stress. Significantly reduced interface state generation was also observed under constant current stress and x‐ray radiation. A secondary‐ion mass spectroscopy depth profile indicates a nitrogen‐rich layer at the Si/SiO2 interface, which can explain the improved integrity of oxynitride dielectric.
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77.55.-g Dielectric thin films
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.61.Ng Insulators
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Submicron pattern etching of GaAs by in situ electron beam lithography using a pattern generator

Y. Sugimoto, K. Akita, M. Taneya, and H. Hidaka

Appl. Phys. Lett. 57, 1012 (1990); http://dx.doi.org/10.1063/1.103551 (3 pages) | Cited 14 times

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Pattern etching of GaAs at submicron size is carried out by in situ electron beam (EB) lithography using a computer‐controlled pattern generator. GaAs oxide on the wafer surface is used as a resist film in EB‐induced Cl2 etching. A 0.5 μm linewidth in a 1 μm pitch line‐and‐space pattern with flat top surface is obtained. Observations of the pattern edge with a scanning electron microscope show that the boundary between the etched area and the oxide mask area is abrupt and that the undulation of the pattern edge is less than about 30 nm.
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81.65.-b Surface treatments
79.20.Hx Electron impact: secondary emission
85.40.Hp Lithography, masks and pattern transfer

Magneto optics of two‐dimensional holes in a strained‐layer InAs0.15Sb0.85/InSb superlattice

S. Y. Lin, D. C. Tsui, L. R. Dawson, C. P. Tigges, and J. E. Schirber

Appl. Phys. Lett. 57, 1015 (1990); http://dx.doi.org/10.1063/1.103552 (3 pages) | Cited 3 times

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Cyclotron resonance (CR) of two‐dimensional holes is observed in the magneto transmission of circularly polarized far‐infrared radiation through two InAs0.15Sb0.85/InSb strained‐layer superlattice samples at 4.2 K. Effective masses are (0.034±0.004)me and (0.054±0.006)me at a hole density of 9.4×1010/cm2 per quantum well. This observation is direct evidence that the energy‐band line‐up of the InAs0.15Sb0.85/InSb strained‐layer superlattice is type II. In addition, a spin resonance is observed in the hole CR‐inactive polarization from which an effective g factor of 140 is deduced.
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73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
78.20.Ls Magneto-optical effects
72.20.My Galvanomagnetic and other magnetotransport effects
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Diffusion coefficient of boron in tungsten silicide

Kunihiro Suzuki, Hiroshi Horie, Yoshimi Yamashita, and Yuji Kataoka

Appl. Phys. Lett. 57, 1018 (1990); http://dx.doi.org/10.1063/1.104277 (2 pages) | Cited 7 times

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We developed a method of determining the impurity diffusion coefficient in tungsten silicide. We modeled the lateral diffusion profiles in tungsten silicide wire, which enabled us to determine the diffusion coefficient of boron from the three‐dimensional secondary‐ion mass spectrometry impurity profiles as to be of the order of 10−8 cm2/s at 900 °C. This was the first estimate of the impurity diffusion coefficient in silicide, and revealed that it is more than one million times larger than that in silicon.
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66.30.J- Diffusion of impurities
85.40.Hp Lithography, masks and pattern transfer
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients

In situ etching depth monitoring for reactive ion etching of InGaAs(P)/InP heterostructures by ellipsometry

Roland Müller

Appl. Phys. Lett. 57, 1020 (1990); http://dx.doi.org/10.1063/1.104099 (2 pages) | Cited 8 times

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In situ ellipsometry at a wavelength of 1300 nm is used to control the etching depth in InGaAs(P)/InP heterostructures. A rotating analyzer ellipsometer, adapted to a parallel‐plate reactor for reactive ion etching (RIE), monitors the decreasing layer thickness during the dry etching process. The momentary etching depth is determined with an accuracy of ±10 nm. Using a methane/hydrogen gas mixture for RIE a characteristic surface modification of the semiconductor material is observed.
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81.65.-b Surface treatments
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
68.55.-a Thin film structure and morphology
68.35.B- Structure of clean surfaces (and surface reconstruction)
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