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Applied Physics Letters / Volume 57 / Issue 10
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Appl. Phys. Lett. 57, 1046 (1990); http://dx.doi.org/10.1063/1.103561 (3 pages)

Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers

L. T. Canham

Royal Signals and Radar Establishment, St. Andrews Road, Great Malvern, Worcestershire WR14 3PS, United Kingdom

(Received 3 May 1990; accepted 4 July 1990)

Indirect evidence is presented that free‐standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography. The novel approach uses electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers. Mesoporous Si layers of high porosity exhibit visible (red) photoluminescence at room temperature, observable with the naked eye under <1 mW unfocused (<0.1 W cm−2) green or blue laser line excitation. This is attributed to dramatic two‐dimensional quantum size effects which can produce emission far above the band gap of bulk crystalline Si.

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KEYWORDS and PACS

Keywords

SILICON, WIRES, FABRICATION, ELECTROCHEMISTRY, PHOTOLUMINESCENCE, ETCHING, ELECTROCHEMICAL CORROSION, ENERGY GAP

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.103561

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

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