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10 Sep 1990

Volume 57, Issue 11, pp. 1075-1169

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AlGaAs/GaAs pnpn differential optical switch operable with 400 fJ optical input energy

Kunihiko Hara, Keisuke Kojima, Kazumasa Mitsunaga, and Kazuo Kyuma

Appl. Phys. Lett. 57, 1075 (1990); http://dx.doi.org/10.1063/1.103537 (3 pages) | Cited 11 times

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Differential optical switching operation with an optical input of as low as 400 fJ (0.07 fJ/μm2) was realized by using parallel‐connected AlGaAs/GaAs pnpn optical switches. An improvement in the sensitivity of more than two orders of magnitude has been attained by introduction of a new operating concept. The electrical transient time was 10 ns, almost independent of optical input levels.
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42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
85.60.Dw Photodiodes; phototransistors; photoresistors
85.60.-q Optoelectronic devices

GaAs multiple quantum well waveguide modulators on silicon substrates

G. V. Treyz, P. G. May, D. LaTulipe, S. Basu, and W. I. Wang

Appl. Phys. Lett. 57, 1078 (1990); http://dx.doi.org/10.1063/1.103538 (3 pages)

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We demonstrate modulation for GaAs multiple quantum well (MQW) waveguide modulators on silicon substrates. The modulators, which were fabricated by molecular beam epitaxy, were operated at wavelengths of 890–910 nm, with greater than 20 dB modulation obtained at λ=900 nm for a reverse bias of 2.5 V. Photocurrent measurements were performed on GaAs MQWs grown on Si and compared with results obtained for GaAs MQWs grown on GaAs. The structures were integrated with GaAs/AlGaAs waveguides and are suitable for integration with silicon‐based electronics.
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42.79.Hp Optical processors, correlators, and modulators
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
42.82.-m Integrated optics
85.60.-q Optoelectronic devices

Electric field screening by photogenerated holes in multiple quantum wells: A new mechanism for absorption saturation

Thomas H. Wood, John Z. Pastalan, Charles A. Burrus, Bart C. Johnson, Barry I. Miller, Jose L. deMiguel, Uziel Koren, and Martin G. Young

Appl. Phys. Lett. 57, 1081 (1990); http://dx.doi.org/10.1063/1.103539 (3 pages) | Cited 57 times

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See Also: Erratum

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We observe saturation in the electroabsorption of InGaAs/InP multiple quantum wells (MQWs) at high optical intensity. Contrary to the mechanism for zero‐field MQWs, we find that saturation occurs due to the presence of trapped photogenerated holes that screen the MQWs from the applied electric field. By carefully measuring the absorption coefficient of the wells and the emission time for holes, we are able to fit the observed electroabsorption saturation with no adjustable parameters.
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78.20.Jq Electro-optical effects
42.79.Hp Optical processors, correlators, and modulators

Heterodyne measurement of poling transient effects in electro‐optic polymer thin films

J. F. Valley, J. W. Wu, and C. L. Valencia

Appl. Phys. Lett. 57, 1084 (1990); http://dx.doi.org/10.1063/1.103540 (3 pages) | Cited 22 times

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We examine the linear electro‐optic response of a polymer thin film to an applied step function poling electric field. Time‐resolved measurement of the electro‐optic response is compared to theory. The electro‐optic response measurement uses a heterodyne interferometric technique not previously reported. Response rise and fall times of the order of milliseconds are resolvable and the temperature dependence of those times reported. Good qualitative agreement between theory and data is presented.
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78.20.Jq Electro-optical effects
42.79.Gn Optical waveguides and couplers

Optical measurement of electron bunching in vacuum

Richard S. Smith and Nathan G. Woodard

Appl. Phys. Lett. 57, 1087 (1990); http://dx.doi.org/10.1063/1.103541 (3 pages) | Cited 1 time

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We report the homodyne detection of phase modulation sidebands induced on a laser beam by a coherently bunched electron beam. This provides a sensitive and nonperturbing measurement of complex Fourier time series components of the electron density. A proof‐of‐principle measurement of the microwave frequency component of electron density in a crossed‐field device, which agrees well with a calculation of the same quantity, is reported.
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52.70.Kz Optical (ultraviolet, visible, infrared) measurements
84.40.Fe Microwave tubes (e.g., klystrons, magnetrons, traveling-wave, backward-wave tubes, etc.)
52.59.Px Hard X-ray sources

Raman examination of a plasma arcjet deposited diamond film

Andrew W. Phelps and K. R. Stalder

Appl. Phys. Lett. 57, 1090 (1990); http://dx.doi.org/10.1063/1.103542 (3 pages) | Cited 11 times

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A chemical vapor deposited diamond film was grown on a silicon substrate by the plasma arcjet method. The deposited film was circular and appeared to be radially zoned under visual examination. A secondary electron microscope was used to examine the surface morphology and microfocus Raman spectroscopy was used to examine the radial compositional variation of the film. Raman spectroscopy shows that the composition of the diamond film changed markedly in the space of hundreds of microns. Changes in the Raman spectra can be correlated with variations in morphology of the diamond film.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.35.B- Structure of clean surfaces (and surface reconstruction)
78.30.Hv Other nonmetallic inorganics

Ultraviolet reflectance of AlN, diamond‐like carbon, and SiC thin films

M. David, S. V. Babu, I. Chaudhry, and B. K. Flint

Appl. Phys. Lett. 57, 1093 (1990); http://dx.doi.org/10.1063/1.103543 (3 pages) | Cited 5 times

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The vacuum ultraviolet (VUV) (120–200 nm) and extreme ultraviolet (EUV) (80–120 nm) reflectance characteristics of as‐deposited films of amorphous aluminum nitride (AlN) and diamond‐like carbon (DLC), and of single‐crystal β‐silicon carbide (SiC) have been measured. AlN and DLC films have been grown by plasma‐enhanced chemical vapor deposition (PECVD) and the SiC film by chemical vapor deposition (CVD). The VUV reflectivities of AlN and SiC exceed 50% while the reflectance of DLC film is low (∼10%). Furthermore, DLC and SiC films display EUV reflectance characteristics that are very desirable. The reflectivity of as‐deposited SiC is 40% and that of DLC is about 20%.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.66.-w Optical properties of specific thin films

Digital chemical vapor deposition of SiO2

M. Nakano, H. Sakaue, H. Kawamoto, A. Nagata, M. Hirose, and Y. Horiike

Appl. Phys. Lett. 57, 1096 (1990); http://dx.doi.org/10.1063/1.104284 (3 pages) | Cited 9 times

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The repetitive cycles of a few monolayers hydrogenated silicon deposition and its oxidation has been employed for the growth of SiO2. The surface reaction is promoted by an alternate irradiation of silicon hydride radical beam produced by the upstream pulsed microwave discharge of SiH4 and discharged oxygen beam. The deposition rate is controlled by the flow velocity of silane gas jet and substrate temperature. It is shown that the deposition species ejected with supersonic velocity into a high vacuum reactor conformably fills the SiO2 film into a deep Si trench.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Raman scattering verification of nonpersistent optical control of electron density in a heterojunction

D. Richards, G. Fasol, and K. Ploog

Appl. Phys. Lett. 57, 1099 (1990); http://dx.doi.org/10.1063/1.103544 (3 pages) | Cited 13 times

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We report electronic Raman scattering measurements of the plasmon mode in a single GaAs/AlGaAs heterojunction, with a δ layer of acceptors in the GaAs buffer a well‐defined distance from the interface. Under illumination above the band gap of the AlGaAs barrier, a dynamic charge‐transfer effect occurs in which the quasi‐two‐dimensional electron concentration of the hetrojunction decreases. From Raman measurements of the plasmon mode we directly determine the change in carrier concentration with excess illumination. We obtain a time of τ=120 ps for the transfer of electrons from the AlGaAs barrier into the two‐dimensional channel.
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73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
78.30.Fs III-V and II-VI semiconductors
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Migration‐enhanced epitaxy growth and characterization of high quality ZnSe/GaAs superlattices

S. Ramesh, N. Kobayashi, and Y. Horikoshi

Appl. Phys. Lett. 57, 1102 (1990); http://dx.doi.org/10.1063/1.103545 (3 pages) | Cited 8 times

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We report the growth of high quality ZnSe/GaAs superlattices by migration‐enhanced epitaxy (MEE) and their characterization using x‐ray diffraction, electron microscopy, and photoluminescence. A streaky reflection high‐energy electron diffraction (RHEED) pattern and strong, persistent RHEED oscillation during the MEE growth of the superlattices indicate a smooth growing surface. The sharp satellite peaks observed clearly in the double‐crystal x‐ray diffraction rocking curve of a 21‐period ZnSe/GaAssuperlattice confirm the excellent crystalline and interfacial quality of the superlattice. Cross‐section high‐resolution electron microscopy indicates coherent lattice arrangement and abrupt interface at ZnSe‐on‐GaAs as well as GaAs‐on‐ZnSe heterointerfaces. Photoluminescence spectra from a superlattice with a periodicity of 40 nm show a strong peak at a wavelength of 829.5 nm with a linewidth of 6.3 meV at a temperature of 10 K; we believe this to be the first observation of photoluminescence from any multilayer structure involving GaAs‐on‐ZnSe growth.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
78.55.Cr III-V semiconductors
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination

Solid phase reaction and electrical properties in Zr/Si system

T. Yamauchi, S. Zaima, K. Mizuno, H. Kitamura, Y. Koide, and Y. Yasuda

Appl. Phys. Lett. 57, 1105 (1990); http://dx.doi.org/10.1063/1.103505 (3 pages) | Cited 10 times

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The specific contact resistivity and the Schottky barrier height in the Zr/Si system have been measured as a function of annealing temperature. The specific contact resistivity decreases with increasing annealing temperature and a minimum value of 4×10−8 Ω cm2 is obtained after annealing at 420 °C in a vacuum, which is about two orders of magnitude lower than that of the Al (1.5% Si)/n+‐Si system. The formation of ZrSi2 is observed at annealing temperatures above 350 °C, which can be considered to be related to the lowering of contact resistance. The Schottky barrier heights of as‐grown Zr films are 0.61 eV for p‐type Si and 0.52 eV for n‐type Si.
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73.40.Cg Contact resistance, contact potential
73.30.+y Surface double layers, Schottky barriers, and work functions
85.40.Ls Metallization, contacts, interconnects; device isolation
81.40.Rs Electrical and magnetic properties related to treatment conditions

Molecular beam epitaxial growth of (100) oriented CdTe on Si (100) using BaF2‐CaF2 as a buffer

A. N. Tiwari, W. Floeder, S. Blunier, H. Zogg, and H. Weibel

Appl. Phys. Lett. 57, 1108 (1990); http://dx.doi.org/10.1063/1.103506 (3 pages) | Cited 14 times

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Epitaxial CdTe (100) has been grown on (100) oriented Si by molecular beam epitaxy using BaF2‐CaF2 as a buffer. Two‐dimensional (2‐D) growth of BaF2(100) is obtained using low‐temperature thermal cycles during growth. CdTe growth is also 2‐D above 270 °C substrate temperature and a 2×1 surface reconstruction indicating a Te‐stabilized surface is obtained. The growth is 3‐D at lower substrate temperatures. Good structural quality films showing sharp electron channeling patterns and pronounced photoluminescence at 77 K are obtained. The full width at half maximum of the band‐edge peak is 12 meV at 77 K.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.55.Et II-VI semiconductors
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
68.35.B- Structure of clean surfaces (and surface reconstruction)

Hydrogen annealing of PtSi‐Si Schottky barrier contacts

B‐Y. Tsaur, J. P. Mattia, and C. K. Chen

Appl. Phys. Lett. 57, 1111 (1990); http://dx.doi.org/10.1063/1.103507 (3 pages) | Cited 7 times

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Schottky barrier PtSi‐Si diodes formed by ultrahigh vacuum deposition and annealing of 1‐nm‐thick Pt films on n‐ and p‐type (100) Si substrates were characterized by current‐voltage measurements at liquid‐nitrogen temperature. The diodes exhibited nearly ideal characteristics, with barrier heights of 0.914 and 0.197 eV, respectively, for typical n‐ and p‐type devices. Subsequent annealing in hydrogen increased the barrier height by 0.013 eV for the n‐type devices and decreased it by the same amount for the p‐type devices. Vacuum annealing of H2‐annealed devices restored the barrier heights to approximately their initial values. These results can be attributed to the presence of Si interface defects that are passivated by hydrogen incorporation and subsequently reactivated by vacuum annealing to remove the hydrogen.
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85.30.Hi Surface barrier, boundary, and point contact devices
73.30.+y Surface double layers, Schottky barriers, and work functions
85.60.Gz Photodetectors (including infrared and CCD detectors)

Random well width superlattices as one‐dimensional artificial amorphous materials and their possible exploitation in a new Ovshinsky switch

Kevin F. Brennan

Appl. Phys. Lett. 57, 1114 (1990); http://dx.doi.org/10.1063/1.104098 (3 pages) | Cited 5 times

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Random variations in the well widths of a superlattice structure are shown theoretically to result in band structure features which mimic amorphous materials. In direct analogy to uniform superlattices in which the periodic potential results in minibands, a randomly varying potential within a superlattice, arising from random variations in well width, gives rise to the formation of states within the miniband gap resembling band tailing effects. Calculations are made of the electron transmissivity through the superlattice based on the effective mass solution of the Schrödinger equation. Superlattice structures consisting of 30 wells of both randomly varying and uniform width are studied. Random variations governed both by a Poisson and a uniform distribution are analyzed. A possible new switching device based on the Ovshinsky effect [Phys. Rev. Lett. 21, 1450 (1968)] is proposed.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
72.20.Dp General theory, scattering mechanisms
72.20.Ht High-field and nonlinear effects
73.40.Gk Tunneling

Transport properties of InxGa1−xAs/GaAs strained quantum well delta‐doped heterostructures grown by molecular beam epitaxy

W.‐P. Hong, A. Zrenner, O. H. Kim, F. DeRosa, J. Harbison, and L. T. Florez

Appl. Phys. Lett. 57, 1117 (1990); http://dx.doi.org/10.1063/1.103508 (3 pages) | Cited 11 times

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We have investigated the transport properties of two‐dimensional electron systems in strained InxGa1−xAs channels confined in a potential well formed by delta doping and GaAs barriers. The dependence of the transport parameters on the indium composition has been studied using Hall, Shubnikov–de Haas, and cyclotron resonance measurements. Experimental measurements of the effective mass have been compared with theoretical data obtained from self‐consistent calculations, which take account of effects due to biaxial strain and nonparabolicity on the band structure of InxGa1−xAs.
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73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
73.61.Ey III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Atmospheric pressure organometallic vapor phase epitaxy growth of high‐mobility GaAs using trimethylgallium and arsine

M. C. Hanna, Z. H. Lu, E. G. Oh, E. Mao, and A. Majerfeld

Appl. Phys. Lett. 57, 1120 (1990); http://dx.doi.org/10.1063/1.103509 (3 pages) | Cited 2 times

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Epitaxial layers of GaAs with peak mobilities as high as 200 000 cm2/V s at 50 K have been grown in an atmospheric pressure organometallic vapor phase epitaxy reactor using trimethylgallium (TMG) and arsine. The growth conditions which lead to high‐mobility GaAs are described in this letter. Low‐temperature photoluminescence and temperature‐dependent Hall measurements are used to study the dependence of the incorporation of residual impurities on the growth temperature and arsine partial pressure. Carbon acceptor densities <1014 cm−3 were measured in the highest purity samples.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.10.Bk Growth from vapor
73.61.Ey III-V semiconductors
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Ultrafast coplanar air‐transmission lines

D. R. Dykaar, A. F. J. Levi, and M. Anzlowar

Appl. Phys. Lett. 57, 1123 (1990); http://dx.doi.org/10.1063/1.103510 (3 pages) | Cited 11 times

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We demonstrate subpicosecond electrical pulse propagation using coplanar air‐transmission lines. Rise times of 0.8 ps after 2.8 mm of propagation are achieved with a velocity of propagation which is 86% of the speed of light in vacuum. Our results suggest that intrachip communication in digital circuits with rise times as short as 1 ps is readily achievable using electrical signals.
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84.40.Az Waveguides, transmission lines, striplines
85.40.Ls Metallization, contacts, interconnects; device isolation

Analysis of buried GaAs layers in 〈100〉 silicon by electron energy loss spectroscopy, Rutherford backscattering spectroscopy, and ion channeling

Peter Madakson and John Bruley

Appl. Phys. Lett. 57, 1126 (1990); http://dx.doi.org/10.1063/1.103511 (3 pages) | Cited 2 times

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Detailed analysis of a buried layer of GaAs in 〈100〉 Si was carried out using electron energy loss spectroscopy, Rutherford backscattering spectroscopy, and ion channeling. The layer was formed by 200 keV dual ion implantation of Ga plus As ions, followed by furnace annealing at 600 and 950 °C. It consists of GaAs particles which are surrounded by fully recrystallized silicon. Beneath it is a dislocation network, made up of a mixture of edge and screw dislocations.
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07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
61.85.+p Channeling phenomena (blocking, energy loss, etc.)
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)

Annealing behavior of GaAs implanted with Si+ and SiF+ and rapid thermally annealed with plasma‐enhanced chemical vapor deposited silicon nitride cap

J. P. de Souza, D. K. Sadana, H. Baratte, and F. Cardone

Appl. Phys. Lett. 57, 1129 (1990); http://dx.doi.org/10.1063/1.103512 (3 pages) | Cited 11 times

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It is demonstrated using rapid thermal annealing that the electrical activation of Si+‐implanted GaAs capped with a plasma‐enhanced chemical vapor deposited (PECVD) silicon nitride (SixNy) layer requires longer annealing times compared to capless annealing. The SIMS profiles of 2H from the GaAs samples onto which SixNy caps were deposited using deuterated ammonia showed that deuterium atoms diffuse readily into the implanted region during PECVD. The improvement in the electrical activation of the capped samples with annealing time correlates directly with decreasing concentration of the 2H in the GaAs. It is postulated that the H atoms diffusing into GaAs during PECVD are trapped by the implantation‐induced damage and the delay in electrical activation corresponds to the time required for the release of the trapped H.
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81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
61.72.U- Doping and impurity implantation

Room‐temperature excitonic saturation in CdZnTe/ZnTe quantum wells

D. Lee, J. E. Zucker, A. M. Johnson, R. D. Feldman, and R. F. Austin

Appl. Phys. Lett. 57, 1132 (1990); http://dx.doi.org/10.1063/1.103513 (3 pages) | Cited 27 times

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We present the first measurements of room‐temperature excitonic absorption saturation in a II‐VI semiconductor quantum well. Strong room‐temperature excitonic absorption in CdZnTe/ZnTe quantum wells is found to saturate at an incident optical intensity that is considerably higher than that for III‐V quantum wells. We show that this phenomenon can be interpreted in terms of the smaller excitonic Bohr radius characteristic of wide‐gap II‐VI compounds.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
71.35.-y Excitons and related phenomena
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
42.70.-a Optical materials

Dislocation constrictions at a Si/SixGe1−x interface

Krishna Rajan

Appl. Phys. Lett. 57, 1135 (1990); http://dx.doi.org/10.1063/1.103514 (2 pages) | Cited 7 times

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Direct evidence of the constriction of dissociated partial dislocations at SiGe epitaxial interfaces is presented for the first time. The spacing between the dislocation constrictions is similar to that observed in deformed in bulk silicon. The importance of these observations to the interpretation of strain relaxation measurements in strained‐layer heterostructures is discussed.
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61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
68.35.B- Structure of clean surfaces (and surface reconstruction)
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances

Epitaxial yttria‐stabilized zirconia on hydrogen‐terminated Si by pulsed laser deposition

D. K. Fork, D. B. Fenner, G. A. N. Connell, Julia M. Phillips, and T. H. Geballe

Appl. Phys. Lett. 57, 1137 (1990); http://dx.doi.org/10.1063/1.104220 (3 pages) | Cited 113 times

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Epitaxial yttria‐stabilized zirconia films were grown on Si (100) and Si (111) by pulsed laser deposition. Rutherford backscattering spectroscopy indicates a high degree of crystalline perfection with a channeling minimum yield of 5.3%. A necessary predeposition process is removal of native silicon oxide from the Si prior to film growth. This is done outside the deposition chamber at 23 °C using a wet‐chemical hydrogen‐termination procedure. Epitaxial YBa2Cu3O7−δ films have been grown on these films.  
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
74.78.-w Superconducting films and low-dimensional structures

Heterostructure p‐n junction tunnel diodes

D. J. Day, Y. Chung, C. Webb, J. N. Eckstein, J. M. Xu, and M. Sweeny

Appl. Phys. Lett. 57, 1140 (1990); http://dx.doi.org/10.1063/1.103515 (3 pages) | Cited 5 times

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Heterostructure p‐n junction tunnel diodes with high peak to valley ratios (12: 1) at room temperature are demonstrated. The variation of peak and valley currents in diodes with different tunnel barriers is described, and the mechanisms responsible for the valley current and its temperature dependence are proposed. Ways to improve the peak to valley ratio and reduce junction capacitance are discussed.
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85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.40.Gk Tunneling

Occupation of quantum states determined by energy storage in superlattice quantum state transfer devices

S. W. Kirchoefer

Appl. Phys. Lett. 57, 1143 (1990); http://dx.doi.org/10.1063/1.103516 (3 pages)

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Quantum state occupation is observed in admittance measurements of two well type (bilevel) superlattice channel conduction devices known as quantum state transfer devices. A small‐signal measurement is used to identify the energy storage in applied electric fields between adjacent dissimilar quantum wells. The spatially dependent nature of the miniband structure of bilevel superlattices is thereby confirmed. This energy storage is found in the same regime of device voltage bias as the previously investigated negative differential resistance, supporting the proposition of a common quantum origin between these two phenomena.
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73.61.Ey III-V semiconductors
73.50.Fq High-field and nonlinear effects
85.30.Fg Bulk semiconductor and conductivity oscillation devices (including Hall effect devices, space-charge-limited devices, and Gunn effect devices)
72.80.Ey III-V and II-VI semiconductors

In situ growth of superconducting YBa2Cu3O7−δ thin films on Si with conducting indium‐tin‐oxide buffer layers

B. J. Kellett, J. H. James, A. Gauzzi, B. Dwir, D. Pavuna, and F. K. Reinhart

Appl. Phys. Lett. 57, 1146 (1990); http://dx.doi.org/10.1063/1.104221 (3 pages) | Cited 16 times

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Superconducting YBa2Cu3O7−δ (YBCO) thin films have been grown in situ on Si with conducting indium‐tin‐oxide (ITO) buffer layers. ITO allows YBCO to be electrically connected to the underlying Si substrate. Both the YBCO film and ITO buffer layer, grown by ion beam sputtering, are textured and polycrystalline with a combined room‐ temperature resistivity of about 2 mΩ cm. Superconducting onsets are 92 K with zero resistance at 68 K.
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81.15.Cd Deposition by sputtering
74.78.-w Superconducting films and low-dimensional structures
74.70.-b Superconducting materials other than cuprates
74.25.Sv Critical currents
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