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24 Sep 1990

Volume 57, Issue 13, pp. 1283-1365

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Self‐developing holographic recording in Li‐implanted Te thin films

J. Beauvais, R. A. Lessard, P. Galarneau, and E. J. Knystautas

Appl. Phys. Lett. 57, 1354 (1990); http://dx.doi.org/10.1063/1.103434 (3 pages)

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Ablative holographic recording was performed on Li‐implanted Te thin films using a Nd:YAG laser. Implantation doses ranging from 2.9×1013 to 2.3×1015 ions/cm2 within the thin films were seen to produce an increase of the writing threshold by 20% and a reduction of the diffraction efficiency of the recorded gratings at the highest doses. For doses as low as 1.2×1014 ions/cm2, a considerable increase in the stability of the recording media has been observed.
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42.40.Kw Holographic interferometry; other holographic techniques
42.70.-a Optical materials
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
61.72.up Other materials

Selective‐area electroless copper plating on polyimide employing laser patterning of a catalytic film

T. J. Hirsch, R. F. Miracky, and C. Lin

Appl. Phys. Lett. 57, 1357 (1990); http://dx.doi.org/10.1063/1.103435 (3 pages) | Cited 13 times

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A scanned, focused argon ion laser beam is used to locally heat a thin polymer/palladium film applied to a polyimide‐coated substrate, thereby reducing chemically bound palladium to palladium metal. The metallic palladium is resistant to a caustic etchant that removes the unirradiated film; the residual patterned palladium then acts as a catalyst for conventional electroless plating. As an alternate patterning method a laser may be used to selectively deposit the thin polymer film on the substrate from a surrounding liquid solution.
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81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
82.50.Bc Processes caused by infrared radiation
82.50.Hp Processes caused by visible and UV light
85.40.Hp Lithography, masks and pattern transfer
85.40.Ls Metallization, contacts, interconnects; device isolation

Mössbauer spectra of nanocrystalline Fe and Fe‐Cr particles in sol‐gel‐derived SiO2 glass

A. Chatterjee, D. Das, D. Chakravorty, and K. Choudhury

Appl. Phys. Lett. 57, 1360 (1990); http://dx.doi.org/10.1063/1.103436 (3 pages) | Cited 25 times

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Ultrafine iron particles prepared by a sol‐gel route are characterized by Mössbauer spectroscopy and transmission electron microscopy. The Mössbauer absorption patterns consist of a ferromagnetic component superposed on a superparamagnetic doublet. The intensity of the superparamagnetic doublet is found to be larger for particles having smaller average diameter. For very fine particles a diffused electron diffraction pattern is observed. It is also shown that the sol‐gel technique could be used to prepare fine particles of a Fe‐Cr alloy.
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76.80.+y Mössbauer effect; other γ-ray spectroscopy
75.50.Bb Fe and its alloys
75.50.Tt Fine-particle systems; nanocrystalline materials
81.20.-n Methods of materials synthesis and materials processing
FREE

Comment on ‘‘Optical bistability in self‐electro‐optic effect devices with asymmetric quantum wells’’ and on ‘‘Novel configuration of self‐electro‐optic effect device based on asymmetric quantum wells’’

R. P. Leavitt and J. W. Little

Appl. Phys. Lett. 57, 1363 (1990); http://dx.doi.org/10.1063/1.103437 (2 pages) | Cited 3 times

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Abstract Unavailable
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.61.Ey III-V semiconductors
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
FREE

Response to ‘‘Comment on ‘Optical bistability in self‐electro‐optic effect devices with asymmetric quantum wells’ and on ‘Novel configuration of self‐electro‐optic effect device based on asymmetric quantum wells’ ’’ [Appl. Phys. Lett. 57, 1363 (1990]

J. Khurgin

Appl. Phys. Lett. 57, 1364 (1990); http://dx.doi.org/10.1063/1.103438 (1 page)

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Abstract Unavailable
Show PACS
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.61.Ey III-V semiconductors
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
FREE

Response to ‘‘Comment on ‘Optical bistability in self‐electro‐optic effect devices with asymmetric quantum wells’ and on ‘Novel configuration of self‐electro‐optic effect device based on asymmetric quantum wells’ ’’ [Appl. Phys. Lett. 57, 1363 (1990)]

D. A. B. Miller

Appl. Phys. Lett. 57, 1364 (1990); http://dx.doi.org/10.1063/1.103439 (2 pages)

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Abstract Unavailable
Show PACS
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.61.Ey III-V semiconductors
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
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