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1 Oct 1990

Volume 57, Issue 14, pp. 1375-1469

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Integration of 1.3 μm wavelength lasers and optical amplifiers

U. Koren, B. I. Miller, G. Raybon, M. Oron, M. G. Young, T. L. Koch, J. L. DeMiguel, M. Chien, B. Tell, K. Brown‐Goebeler, and C. A. Burrus

Appl. Phys. Lett. 57, 1375 (1990); http://dx.doi.org/10.1063/1.103440 (3 pages) | Cited 5 times

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We describe integration of lasers and optical amplifiers at 1.3 μm wavelength. The effects of the residual mirror reflectivity at the amplifier front facet are discussed. Using photonic integration techniques very high coupling efficiency of light from the laser to the amplifier sections was observed, with current transfer efficiency (ratio of photocurrent to drive current) as high as 33%. The output light current characteristics of the laser have a slope efficiency higher than 2 mW/mA. This device may be used for digital modulation with very low rf power drive requirements. Modulation at 2 Gbit/s has been demonstrated.  
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.By Design of specific laser systems
42.60.Fc Modulation, tuning, and mode locking
42.82.-m Integrated optics

Photodarkening and bleaching in amorphous silicon nitride

C. H. Seager and J. Kanicki

Appl. Phys. Lett. 57, 1378 (1990); http://dx.doi.org/10.1063/1.104089 (3 pages) | Cited 11 times

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UV‐induced enhancement of the subgap optical absorption has been observed in thin films of chemically vapor deposited silicon nitride. The threshold for this process is ∼4 eV. Visible light bleaches out much of the enhanced absorption and 200–400 °C thermal anneals remove the rest, leaving the optical properties of the nitride in the ‘‘as‐grown’’ state. The characteristics of this creation and bleaching process suggest that UV light ‘‘optically dethermalizes’’ the distribution of carriers in localized band tail states. Correlation of our data with recent electron spin resonance results suggests that many of the trapped carriers may be singly occupied silicon dangling bonds.
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78.66.-w Optical properties of specific thin films
73.50.Pz Photoconduction and photovoltaic effects

Excitonic optical nonlinearity in quantum‐confined CuCl‐doped borosilicate glass

B. L. Justus, M. E. Seaver, J. A. Ruller, and A. J. Campillo

Appl. Phys. Lett. 57, 1381 (1990); http://dx.doi.org/10.1063/1.103441 (3 pages) | Cited 31 times

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The nonlinear refractive index n2 is reported for quantum‐confined CuCl microcrystallites in borosilicate glass near the Z3 excitonic resonance. Induced index changes were estimated using Kramers–Kronig analyses of absorption bleaching data from 370 to 388 nm. The nonlinearity was found to increase with increasing particle radius over the range 22 to 34 Å, in agreement with theoretical predictions.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
42.70.Ce Glasses, quartz

Novel modulation method for bidirectional transmissions on a single optical fiber

J. P. Goedgebuer and A. Hamel

Appl. Phys. Lett. 57, 1384 (1990); http://dx.doi.org/10.1063/1.103442 (3 pages)

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A novel method of simultaneous two‐way transmission over one fiber is described. Only one optical source is required. Transmission of signals exhibiting the same modulation speeds along the two directions of a single fiber is demonstrated using a coherence‐modulated light source. The first experimental results of a version of this system operating over 1 km of a multimode fiber are presented.
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42.81.Dp Propagation, scattering, and losses; solitons
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
85.60.-q Optoelectronic devices
41.20.Jb Electromagnetic wave propagation; radiowave propagation

High index contrast mirrors for optical microcavities

Seng‐Tiong Ho, S. L. McCall, R. E. Slusher, L. N. Pfeiffer, K. W. West, A. F. J. Levi, G. E. Blonder, and J. L. Jewell

Appl. Phys. Lett. 57, 1387 (1990); http://dx.doi.org/10.1063/1.103443 (3 pages) | Cited 24 times

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A new technique for constructing multilayer dielectric mirrors is described that results in high reflectivities with only two or three dielectric layer pairs per mirror. These structures are obtained by selectively etching layered AlxGa1−xAs material grown by molecular beam epitaxy and then replacing the etched regions with acrylic resin or air. A thin optical cavity produced by this technique is demonstrated with mirror reflectivities near 96%. These techniques allow the fabrication of lasers, light‐emitting diodes, or optical switches with high contrast ratio mirrors on both sides of an optically active region in order to enhance output coupling, lower laser thresholds, and increase modulation rates.
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42.15.Eq Optical system design
42.79.Bh Lenses, prisms and mirrors
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
07.60.-j Optical instruments and equipment
42.79.-e Optical elements, devices, and systems

Linewidth enhancement factor for InGaAs/InP strained quantum well lasers

N. K. Dutta, H. Temkin, T. Tanbun‐Ek, and R. Logan

Appl. Phys. Lett. 57, 1390 (1990); http://dx.doi.org/10.1063/1.103444 (2 pages) | Cited 15 times

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The linewidth enhancement factor α in an InGaAs/InP strained‐layer multiple quantum well (MQW) laser emitting near 1.55 μm has been determined from the spontaneous emission spectra below threshold. The active layers in the MQW structure in this device are under 0.7% compressive strain. The measured α at the lasing wavelength is 2.0. The calculation of α using interpolated bandstructure parameters shows that it varies rapidly with injected carrier density and the calculated value for our device is close to the measured value. The small α for strained MQW InGaAs lasers should result in performance improvement that are advantageous for lightwave system application.
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42.55.Ah General laser theory
42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Behavior of the first layer growth in GaAs molecular beam epitaxy

D. G. Liu, C. P. Lee, K. H. Chang, J. S. Wu, and D. C. Liou

Appl. Phys. Lett. 57, 1392 (1990); http://dx.doi.org/10.1063/1.103445 (3 pages) | Cited 1 time

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The first layer growth in GaAs molecular beam epitaxy has been studied by reflection high‐energy electron diffraction (RHEED). The time between the growth start and the first RHEED intensity peak is found to be dependent on the starting surface condition and is different from the time needed for a single layer growth. Periodic flux interruption has been used to study the surface recovery behavior as a function of growth time. When the growth time is the same as the time for a single layer growth, sustained two‐dimensional growth can be obtained.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.35.Ja Surface and interface dynamics and vibrations

(√3×√3)B structure on a (5×5)GexSi1−x/Si (111) surface

T. Tatsumi, I. Hirosawa, T. Niino, H. Hirayama, and J. Mizuki

Appl. Phys. Lett. 57, 1395 (1990); http://dx.doi.org/10.1063/1.104095 (3 pages) | Cited 6 times

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A (√3×√3)B structure was found to be formed on a (5×5) GexSi1−x/Si (111) surface on which Ga or Sn atoms did not form any superstructures. The critical B coverage at which a (7×7) pattern disappeared and only a (√3×√3) pattern was visible increased as the fraction (x) of Ge in the substrate layer increased. A Si epitaxial overlayer was grown on the (√3×√3)B/50 Å Ge0.4Si0.6/Si (111) structure at a growth temperature of 300 °C. The observed (−2/3,4/3) reflection intensity in grazing x‐ray diffraction was 50 times larger than that of a Si epitaxial layer grown on a (√3×√3)B/Si (111) structure under the same condition. On a GexSi1−x substrate, the B(√3×√3) structure is well preserved at the interface probably because of relief of the interface strain that results from the small size of the boron atom.
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68.55.-a Thin film structure and morphology
81.15.Np Solid phase epitaxy; growth from solid phases
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Novel alignment technique for surface stabilized ferroelectric liquid crystal

S. S. Bawa, A. M. Biradar, K. Saxena, and S. Chandra

Appl. Phys. Lett. 57, 1398 (1990); http://dx.doi.org/10.1063/1.103446 (3 pages) | Cited 10 times

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An alignment method for obtaining excellent surface stabilized ferroelectric liquid‐crystal devices is described. Alignment is obtained by obliquely depositing the SiO in two steps. The first deposition involves vacuum coating at 60° angle and the second at 85° (orthogonally to the first) with the substrate normal. The method induces a high (∼20°–25°) pretilt surface which depends on the thickness of the second layer. The glass substrates are matched with antiparallel direction of evaporation of second coating. This ensures a selective pretilt of molecules and the uniformly tilted smectic layer structure. The advantages of this new method are the ease of large‐scale production, defect‐free large uniform monodomains, good contrast, bistability, and microsecond switching speed response.
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61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order
61.30.Eb Experimental determinations of smectic, nematic, cholesteric, and other structures
68.15.+e Liquid thin films
77.80.-e Ferroelectricity and antiferroelectricity

Spontaneous vitrification in an immiscible Fe‐Cu system

L. J. Huang and B. X. Liu

Appl. Phys. Lett. 57, 1401 (1990); http://dx.doi.org/10.1063/1.103447 (3 pages) | Cited 19 times

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Spontaneous vitrification was observed in the equilibrium immiscible Fe‐Cu system. The metastable phase before vitrification was an icosahedral incommensurate phase which was formed by an ion beam mixing of Fe‐Cu multilayer films at room temperature and subsequent high‐temperature thermal annealing. The electrical and magnetic properties of the icosahedral phase are also reported, and the relation with spontaneous vitrification is discussed.
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64.70.K- Solid-solid transitions
61.66.Dk Alloys
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination

Electron/hole energy shifts in narrow GaAs/AlAs quantum wells: Inhomogeneous broadening due to half‐monolayer well‐width fluctuations

W. S. Fu, G. R. Olbright, A. Owyoung, J. F. Klem, R. M. Biefeld, and G. R. Hadley

Appl. Phys. Lett. 57, 1404 (1990); http://dx.doi.org/10.1063/1.103448 (3 pages) | Cited 5 times

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We use absorption, photoluminescence, and x‐ray diffraction spectra of two GaAs/AlAs type II heterostructures, whose GaAs well thicknesses differ by ≂4 Å to obtain a direct measurement of the individual quantum confinement energy shifts of the heavy hole, light hole, and electron levels. We find that excitonic absorption linewidths are dominated by inhomogeneous broadening that arises from half‐monolayer well‐thickness fluctuations. For self‐consistency these shifts are applied to separately determine the individual valence‐band and conduction‐band offsets.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.50.Pz Photoconduction and photovoltaic effects

Do thermal spikes contribute to the ion‐induced mixing of Ni into Zr, Ti, and Pd?

P. Børgesen, D. A. Lilienfeld, and H. H. Johnson

Appl. Phys. Lett. 57, 1407 (1990); http://dx.doi.org/10.1063/1.103449 (3 pages) | Cited 45 times

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Low‐temperature ion beam mixing rates for Ni‐Ti, Zr‐Ni, and Pd‐Ni bilayers significantly exceeded binary collision estimates, and appeared quite sensitive to thermodynamic driving forces. In the absence of a temperature dependence such a behavior is commonly ascribed to interdiffusion within thermal spikes. However, the Ni‐Ti mixing rate was seen to vary linearly with nuclear damage energy for irradiation with 600 keV Xe, Kr, or Ar, 300 keV Ne or N, or 200 keV N ions, or 1 MeV Au ions (literature value). This excludes overlapping thermal spikes. An expression was derived for mixing due to nonoverlapping thermal spikes, but this could also not explain our results.
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79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
68.35.Fx Diffusion; interface formation

Suppression of lateral silicide formation in submicron TiSi2 ohmic contacts to heavily doped p‐type silicon

A. H. Perera and J. P. Krusius

Appl. Phys. Lett. 57, 1410 (1990); http://dx.doi.org/10.1063/1.103450 (3 pages) | Cited 6 times

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A lateral silicidation problem has been found in the conventional self‐aligned titanium disilicide (TiSi2) process for making ohmic contacts to heavily doped p‐type (p+) silicon in the submicron domain. Two solutions curtailing the lateral Si migration and the resulting lateral silicide formation are presented: an additional low‐temperature nitrogen anneal and an interfacial carbon layer. Excellent ohmic contacts with a minimum area of 0.06 μm2 and a spacing of 0.2 μm are demonstrated with both solutions.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.30.Hi Surface barrier, boundary, and point contact devices
68.35.Fx Diffusion; interface formation

Fabrication of atomically sharp tungsten tips

T. S. Ravi, R. B. Marcus, T. Gmitter, H. H. Busta, and J. T. Niccum

Appl. Phys. Lett. 57, 1413 (1990); http://dx.doi.org/10.1063/1.103451 (3 pages) | Cited 1 time

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Atomically sharp tungsten tips (<20 Å) have been grown on a silicon substrate by chemical vapor reaction of WF6 with atomically sharp preformed silicon tips. Transmission electron microscope studies show that a thickness of about 50 Å of tungsten is optimum for complete coverage of silicon while retaining atomic sharpness at the tip. The tungsten is nearly amorphous and is porous. These tips have potential applications in vacuum microelectronics as electron emitters and can also be used as electronic and magnetic microsensors and probes.
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07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
07.07.Mp Transducers
07.78.+s Electron, positron, and ion microscopes; electron diffractometers

Thermal bias annealing evidence for the defect pool in amorphous silicon thin‐film transistors

S. C. Deane, M. J. Powell, J. R. Hughes, I. D. French, and W. I. Milne

Appl. Phys. Lett. 57, 1416 (1990); http://dx.doi.org/10.1063/1.103452 (3 pages) | Cited 12 times

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Thin‐film transistors were thermally annealed while a bias voltage was applied to the gate electrode. The transfer characteristics were then measured, and the density of states distributions derived by field‐effect analysis. The results indicate that the equilibrium distribution and number of defects in the transistor channel region depend on the position of the Fermi energy during annealing. Thus the density of states can be increased or decreased in parts of the band gap. A high Fermi energy during annealing results in few states high in the gap and more states low in the gap. The reverse is true for annealing while the Fermi energy is low. This is consistent with the defect pool model for silicon dangling bond states and suggests that most deep states are part of the defect pool.
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85.30.De Semiconductor-device characterization, design, and modeling
73.20.Hb Impurity and defect levels; energy states of adsorbed species
73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Infrared response from metallic particles embedded in a single‐crystal Si matrix: The layered internal photoemission sensor

R. W. Fathauer, J. M. Iannelli, C. W. Nieh, and Shin Hashimoto

Appl. Phys. Lett. 57, 1419 (1990); http://dx.doi.org/10.1063/1.103453 (3 pages) | Cited 25 times

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Infrared radiation at wavelengths of 1–2 μm has been detected in a new device labeled the layered internal photoemission sensor. The device structure, which is grown by molecular beam epitaxy, incorporates epitaxial CoSi2 particles with dimensions of 10–50 nm. Radiation absorbed by these particles photoexcites carriers into a surrounding single‐crystal silicon matrix. A peak quantum efficiency of 1.3% is measured, which is approximately six times higher than in planar CoSi2 Schottky diodes with 5 nm silicide thickness.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
72.40.+w Photoconduction and photovoltaic effects
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Novel Si1−xGex/Si heterojunction internal photoemission long‐wavelength infrared detectors

T. L. Lin and J. Maserjian

Appl. Phys. Lett. 57, 1422 (1990); http://dx.doi.org/10.1063/1.103454 (3 pages) | Cited 36 times

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A new approach to the design of a Si‐based infrared detector is demonstrated, based on internal photoemission over a Si1−xGex/Si heterojunction barrier. The heterojunction internal photoemission device structure is grown by molecular beam epitaxy (MBE). The detector requires a degenerately doped p+‐Si1−xGex layer for strong infrared absorption and photoresponse. Doping concentrations to 1020 cm−3 are achieved using boron from a HBO2 source during MBE growth of the Si1−xGex layers. The photoresponse of this device is tailorable, and most significantly, can be extended into the long‐wavelength infrared regime by varying the Ge ratio x in the Si1−xGex layers. Results are obtained with x=0.2, 0.28, 0.3, and 0.4 on patterned Si (100) substrates. Photoresponse at wavelengths ranging from 2 to 10 μm is obtained with quantum efficiencies above ∼1% in these nonoptimized structures.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
73.50.Pz Photoconduction and photovoltaic effects
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Is the cation sticking coefficient unity in molecular beam epitaxy at low temperature?

T. H. Chiu and S. N. G. Chu

Appl. Phys. Lett. 57, 1425 (1990); http://dx.doi.org/10.1063/1.103455 (3 pages) | Cited 3 times

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Using identical Ga flux density, we have measured the growth rate difference between GaAs and GaSb. The large discrepancy of 15% seems to suggest a change in the sticking coefficient of Ga when different group V species are involved. However, when lattice parameters are taken into account correctly, the discrepancy appears to be a natural consequence because fewer Ga atoms are needed to complete a monolayer on the GaSb surface. Similar results are also observed for the growth of Al(Sb,As) and In(Sb,As). This points to the possible systematic error in the estimation of ternary composition, such as InGaAs, by adding the growth rates of binary constituents InAs and GaAs without correction for change in lattice constants.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Characterization of the native oxide of CuInSe2 using synchrotron radiation photoemission

Art J. Nelson, Steven Gebhard, L. L. Kazmerski, Elio Colavita, Mike Engelhardt, and Hartmut Höchst

Appl. Phys. Lett. 57, 1428 (1990); http://dx.doi.org/10.1063/1.104122 (3 pages) | Cited 12 times

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Synchrotron radiation soft x‐ray photoemission spectroscopy was used to investigate the native oxide of n‐type single‐crystal CuInSe2. Photoemission measurements were acquired on the oxide surface before and after removal using sputter etching. Observed changes in the valence‐band electronic structure as well as changes in the In 4d and Se 3d core lines were correlated with the interface chemistry at the oxide/CuInSe2 interface. These results show the native oxide to be composed of an In2O3 outer layer (no SeO2) with an additional Cu2Se interface layer.
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81.65.-b Surface treatments
68.35.Dv Composition, segregation; defects and impurities
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)

Using a neural network to proximity correct patterns written with a Cambridge electron beam microfabricator 10.5 lithography system

K. D. Cummings, R. C. Frye, and E. A. Rietman

Appl. Phys. Lett. 57, 1431 (1990); http://dx.doi.org/10.1063/1.103456 (3 pages) | Cited 4 times

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This letter describes our initial results of using a theoretical determination of the proximity function and an adaptively trained neural network to proximity correct patterns written on a Cambridge electron beam lithography system. The methods described are complete and may be applied to any electron beam exposure system that can modify the dose during exposure. The patterns produced in resist show the effects of proximity correction versus noncorrected patterns.
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85.40.Hp Lithography, masks and pattern transfer
81.65.-b Surface treatments
41.75.Fr Electron and positron beams
79.20.Kz Other electron-impact emission phenomena

Misfit dislocation dynamics in Si1−xGex/(100) Si: Uncapped alloy layers, buried strained layers, and multiple quantum wells

D. C. Houghton

Appl. Phys. Lett. 57, 1434 (1990); http://dx.doi.org/10.1063/1.103457 (3 pages) | Cited 22 times

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Misfit dislocation glide velocities have been measured in Si/Si1−xGex/Si heterostructures. Si capped single Si1−xGex alloy layers and multiple quantum well geometries were investigated and no difference was found between dislocation kinetics in these structures and the equivalent alloy layer of the same average composition. Velocities in the range 25 nm s−1 to 2 nm s−1 were determined from the length of a/2〈110〉 60° type misfit dislocation segments after annealing in the temperature range 450–950 °C, for times between 5 and 2000 s. Two dislocation mechanisms were observed; a single misfit array at the first Si1−xGex/Si interface was found in multiple quantum wells and alloy layers while paired misfit segments were observed at both strained interfaces in Si capped Si1−xGex alloy layers. An expression for the effective stress, τeff, for single and paired misfit dislocation propagation is presented which accommodates variation in the unstrained Si cap thickness. The mean activation energy for misfit disclocation glide Qv for Si1−xGex/Si heterostructures with 0.035<x<0.25 was found to be 2.25±0.05 eV and Qv was independent of τeff. For all geometries and for τeff in the range 100–750 MPa the misfit dislocation glide velocity can be defined by V(mm s−1)= (4±2)×1014(τeff/μ)2 exp−(2.25/kT).
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.35.Dv Composition, segregation; defects and impurities
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
61.72.Bb Theories and models of crystal defects

Quantum well lasers with active region grown by laser‐assisted atomic layer epitaxy

Q. Chen, J. S. Osinski, and P. D. Dapkus

Appl. Phys. Lett. 57, 1437 (1990); http://dx.doi.org/10.1063/1.103363 (3 pages) | Cited 11 times

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Laser‐assisted atomic layer epitaxy (LALE) is used to locally deposit device‐quality material for the first time, as demonstrated by successfully fabricating broad‐area lasers with a GaAs quantum well grown in this way. By hybridizing LALE with conventional metalorganic chemical vapor deposition epitaxy, heterostructures are grown which allow characterization of material quality by photoluminescence and capacitance‐voltage measurements. In addition, graded‐index separate‐confinement heterostructure lasers with threshold current densities of 650 A/cm2 for 580‐μm‐long devices were made using the LALE quantum well deposit, while devices made away from the deposit did not lase.
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42.55.Px Semiconductor lasers; laser diodes
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Dependence of the saturated light‐induced defect density on macroscopic properties of hydrogenated amorphous silicon

H. R. Park, J. Z. Liu, P. Roca i Cabarrocas, A. Maruyama, M. Isomura, S. Wagner, J. R. Abelson, and F. Finger

Appl. Phys. Lett. 57, 1440 (1990); http://dx.doi.org/10.1063/1.103364 (3 pages) | Cited 22 times

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We report a study of the saturated light‐induced defect density Ns,sat in 37 hydrogenated (and in part fluorinated) amorphous silicon [a‐Si:H(F)] films grown in six different reactors under widely different conditions. Ns,sat was attained by exposing the films to light from a krypton ion laser (λ=647.1 nm). Ns,sat is determined by the constant photocurrent method and lies between 5×1016 and 2×1017 cm−3. Ns,sat drops with decreasing optical gap Eopt and hydrogen content cH, but is not correlated with the initial defect density Ns,ann or with the Urbach tail energy Eu. We discuss our results within the framework of existing models for light‐induced defects.
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72.80.Ng Disordered solids
73.50.Pz Photoconduction and photovoltaic effects
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)

Evaluation of device quality germanium‐germanium oxynitride interfaces by high‐resolution transmission electron microscopy

D. C. Paine, J. J. Rosenberg, S. C. Martin, D. Luo, and M. Kawasaki

Appl. Phys. Lett. 57, 1443 (1990); http://dx.doi.org/10.1063/1.104123 (3 pages) | Cited 3 times

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Previous work has shown that germanium oxynitride films grown on Ge substrates by thermal oxidation followed by nitridation provide a passivating dielectric which can be used to fabricate metal‐oxynitride‐semiconductor field‐effect transistors. We have investigated the interfacial microstructure of this semiconductor‐dielectric system with high‐resolution transmission electron microscopy (TEM) and show that 21‐nm‐thick germanium oxynitride films grown using this technique are uniform in thickness and interfacially smooth on a scale of ±0.5 nm over lateral peak‐to‐peak distances on the order of 100’s of nm. The germanium oxynitride was seen to be electron beam sensitive with significant damage to both the oxynitride and the semiconductor‐insulator interface being observed after exposure for 15 s to 200 keV electrons at a current density of 2.250 A/cm2 at the specimen.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
68.35.Fx Diffusion; interface formation
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination

Elastic accommodation of heteroepitaxial InSb films on GaAs

K. Rajan, R. Gong, and J. Webb

Appl. Phys. Lett. 57, 1446 (1990); http://dx.doi.org/10.1063/1.103365 (3 pages) | Cited 1 time

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Heteroepitaxial films of InSb on GaAs (100) grown by metalorganic magnetron sputtering have been studied by transmission electron microscopy. The elastic strain in the InSb films has been measured using Moiré fringe analysis. Dilational lattice strain was found to decrease with increasing film thickness. The measured strains are in general agreement with a simple strain energy criterion for elastic accommodation. The application of a coincidence site lattice model for heteroepitaxy is also discussed.
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68.35.Gy Mechanical properties; surface strains
68.35.Fx Diffusion; interface formation
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
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