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15 Oct 1990

Volume 57, Issue 16, pp. 1595-1698

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Effect of composition on the rates of photodarkening and silver photodoping in amorphous P‐Se films

Koichi Kawashima, Hideo Hosono, and Yoshihiro Abe

Appl. Phys. Lett. 57, 1595 (1990); http://dx.doi.org/10.1063/1.104091 (2 pages) | Cited 2 times

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Rates of photodarkening and photodoping of silver were examined in binary PxSe1−x amorphous films over a wide range from x=1 to 0.4. No monotonic change with x was observed for either of the rates. The photodarkening rate remained almost constant in the ranges of x<0.85, was reduced drastically by two orders of magnitude around x≊0.9, and became constant again in 0.95<x. A similar composition dependence was observed also for the photodoping rate. These results suggest that the presence of the critical composition in both rates is due to the change in the nature of uppermost orbitals of the valence band.
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42.70.Gi Light-sensitive materials
78.66.-w Optical properties of specific thin films

Double‐sided epitaxy of multiquantum well modulator arrays by molecular beam epitaxy

E. G. Scott and M. A. Z. Rejman‐Greene

Appl. Phys. Lett. 57, 1597 (1990); http://dx.doi.org/10.1063/1.103359 (3 pages)

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We report, for the first time, the growth of high quality InP/InGaAs multiquantum well modulator arrays on both the [100] and the [100] faces of the same InP wafer using an indium‐free wafer mounting technique in gas source molecular beam epitaxy.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
42.79.Hp Optical processors, correlators, and modulators
42.86.+b Optical workshop techniques

New phase interference technique applied for sensitive photothermal microscopy

H. G. Walther, K. Friedrich, K. Haupt, K. Muratikov, and A. Glazov

Appl. Phys. Lett. 57, 1600 (1990); http://dx.doi.org/10.1063/1.103360 (2 pages) | Cited 10 times

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An interferometric version of mirage technique is reported, whereby one part of the probe beam passes through the center of the thermal lens in air, while the other one avoids it. By mixing the two parts with the help of a diffraction grating, a strong photothermal signal is obtained at predetermined spots of the interference pattern. This photothermal arrangement is integrated into a reflected light microscope.
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07.60.Pb Conventional optical microscopes
42.30.Lr Modulation and optical transfer functions
42.60.Fc Modulation, tuning, and mode locking
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation

Onset of subharmonics generated by forward wave interactions in Bi12SiO20

D. J. Webb, L. B. Au, D. C. Jones, and L. Solymar

Appl. Phys. Lett. 57, 1602 (1990); http://dx.doi.org/10.1063/1.104132 (3 pages) | Cited 20 times

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The threshold conditions, under which a spatial subharmonic beam may arise when a Bi12SiO20 crystal is illuminated by two pump beams, are investigated. It is shown that a nonlinear theory based on the material equations leads to good qualitative agreement with experiments
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.20.-e Optical properties of bulk materials and thin films
42.70.-a Optical materials

Submilliamp threshold vertical‐cavity laser diodes

Randall S. Geels and Larry A. Coldren

Appl. Phys. Lett. 57, 1605 (1990); http://dx.doi.org/10.1063/1.103361 (3 pages) | Cited 41 times

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We report for the first time room‐temperature, continuous‐wave operation of individual vertical‐cavity laser diodes with submilliampere threshold currents. A single quantum well active region emitting at 979 nm surrounded by GaAs/AlAs Bragg reflector mirrors was used. Threshold currents were as low as 0.7 mA. A record low linewidth‐power product of 5 MHz mW and a linewidth as narrow as 85 MHz was measured. High yield and good uniformity were demonstrated.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.82.-m Integrated optics
85.60.Jb Light-emitting devices

Low‐threshold (≤ 92 A/cm2) 1.6 μm strained‐layer single quantum well laser diodes optically pumped by a 0.8 μm laser diode

C. E. Zah, R. Bhat, K. W. Cheung, N. C. Andreadakis, F. J. Favire, S. G. Menocal, E. Yablonovitch, D. M. Hwang, M. Koza, T. J. Gmitter, and T. P. Lee

Appl. Phys. Lett. 57, 1608 (1990); http://dx.doi.org/10.1063/1.103362 (2 pages) | Cited 9 times

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To explore the ultimate threshold current limit in long‐wavelength semiconductor lasers, InxGa1−xAs/InP strained‐layer single quantum well laser diodes were studied for the first time by optically pumping with a 0.8 μm laser diode. Low‐threshold (≤92 A/cm2) cw operation was obtained and the lasing wavelength (1.62 μm) corresponding to the transition from the first quantization state of a 25 Å In0.8Ga0.2As well was observed. By taking the carrier collection efficiency (≤77%) into account, the actual threshold current density could be as low as 70 A/cm2.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
85.60.Jb Light-emitting devices

InGaAs/InP quantum well lasers with sub‐mA threshold current

H. Temkin, N. K. Dutta, T. Tanbun‐Ek, R. A. Logan, and A. M. Sergent

Appl. Phys. Lett. 57, 1610 (1990); http://dx.doi.org/10.1063/1.104085 (3 pages) | Cited 15 times

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We evaluate the effect of high‐reflectivity facet coatings on the threshold current of lattice matched and compressively strained InGaAs/InP quantum well lasers. A large decrease in the threshold current is observed in structures with low internal losses. Coated lasers exhibit threshold currents as low as 1.1 mA at 20 °C and 0.9 mA at 10 °C, down from ∼15 mA in as‐cleaved devices with cavity length of 200 μm. These changes are carefully modeled and the prospects for further reduction of the threshold current discussed.
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73.40.Gk Tunneling
72.80.Ey III-V and II-VI semiconductors
73.50.Fq High-field and nonlinear effects

Observation of reduced current thresholds in GaAs/AlGaAs vertical‐cavity surface‐emitting lasers grown on 4° off‐orientation (001) GaAs substrates

Y. H. Wang, K. Tai, Y. F. Hsieh, S. N. G. Chu, J. D. Wynn, and A. Y. Cho

Appl. Phys. Lett. 57, 1613 (1990); http://dx.doi.org/10.1063/1.104086 (3 pages) | Cited 5 times

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GaAs/AlGaAs vertical‐cavity surface‐emitting lasers (VCSELs) with two semiconductor distributed Bragg reflectors (DBRs) were grown by molecular beam epitaxy. The threshold current was found to be 20–50% less on an average for VCSELs grown on the 4° off‐orientation (001) substrates than those on the on‐orientation ones. The lower threshold current was attributed to the smoother interfaces of the Al0.1Ga0.9As/AlAs DBRs in the off‐orientation growth observed by transmission electron microscopy. A threshold current and current density of 12 mA and 10.5 kA/cm2 were measured with an emission efficiency of 0.2 mW/mA.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Powder‐free plasma chemical vapor deposition of hydrogenated amorphous silicon with high rf power density using modulated rf discharge

Y. Watanabe, M. Shiratani, and H. Makino

Appl. Phys. Lett. 57, 1616 (1990); http://dx.doi.org/10.1063/1.104087 (3 pages) | Cited 40 times

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Deposition of hydrogenated amorphous silicon films from SiH4/He gas mixtures was performed by using a square wave amplitude modulated rf discharge. The modulation was used for controlling radical densities in plasmas which led to a high rate deposition of good quality films. The fairly high deposition rate of 6 Å/s was obtained for a low concentration of 5% SiH4 and a high rf peak power 200 W (0.8 W/cm3) without any appreciable amount of powder particles in the reaction chamber. The optical gap of the films was 1.8–1.95 eV. Emission intensities of HeI 388.9 nm and SiH 413.5 nm linearly increased with rf peak power and were well correlated with the deposition rate.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
52.80.Pi High-frequency and RF discharges
61.43.Fs Glasses
61.43.-j Disordered solids
61.44.Br Quasicrystals

Multi‐beam‐bulk model for electron transport during commutation in an optically triggered pseudospark thyratron

Hoyoung Pak and Mark J. Kushner

Appl. Phys. Lett. 57, 1619 (1990); http://dx.doi.org/10.1063/1.104066 (3 pages) | Cited 11 times

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The electron energy distribution in low‐pressure pulsed power plasma switches is typically not in equilibrium with the local electric field. To simulate electron transport under these conditions a computer model has been developed and has been applied to the optically triggered pseudospark, or back‐lit‐thyratron (BLT). The model uses many groups of electrons divided into the ‘‘bulk’’ and the ‘‘beam’’. The bulk is represented by a fluid while the beam electrons are ballistic in nature and have not undergone significant energy‐loss collisions after generation. To account for beam electrons being generated at arbitrary locations in the BLT, multiple beams are employed in the model. The commutation phase of switching in the BLT is investigated and the onset of a hollow cathode effect during switching is predicted.
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52.75.Kq Plasma switches (e.g., spark gaps)
52.80.Hc Glow; corona
52.25.Fi Transport properties

Friction reduction and zero wear for 52100 bearing steel by high‐dose implantation of carbon

K. Kobs, H. Dimigen, C. J. M. Denissen, E. Gerritsen, J. Politiek, L. J. van Ijzendoorn, R. Oechsner, A. Kluge, and H. Ryssel

Appl. Phys. Lett. 57, 1622 (1990); http://dx.doi.org/10.1063/1.104067 (3 pages) | Cited 11 times

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Ion implantation of carbon in the AISI 52100 bearing steel yields a distinct reduction in friction and wear. This improvement is strongly dependent on the implanted fluence. The coefficient of friction decreases from 0.6 to 0.2 for doses >1×1018 cm−2 (energy 100 keV) and a wear reduction to nearly ‘‘zero wear’’ was obtainable even under severe wear conditions. The counterpart (unimplanted AISI 52100 steel ball) shows a similar behavior, which demonstrates that the tribological system is totally changed. Mössbauer spectroscopy and x‐ray diffraction revealed that hexagonal ϵ‐carbide is formed on implantation. On the other hand, Rutherford backscattering spectrometry shows that for high doses a large fraction of the implanted carbon is not contained in this carbide.
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81.40.Pq Friction, lubrication, and wear
61.72.up Other materials

Spatially addressable light transducer using an organic electroluminescent diode combined with amorphous silicon carbide film as an electron photoinjecting electrode

Masahiro Hiramoto, Tomoya Miyao, and Masaaki Yokoyama

Appl. Phys. Lett. 57, 1625 (1990); http://dx.doi.org/10.1063/1.104068 (3 pages) | Cited 15 times

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A new type of light transducer has been designed consisting of an organic electroluminescent (EL) diode on a photoconductive amorphous silicon carbide (a‐SiC:H) film as an electron photoinjecting electrode. Input light received by a photosensitive a‐SiC:H film is transduced to the output light with a different wavelength emitted from an EL diode in the layered configuration. The input‐light pattern was well kept spatially in the output. The EL output light was controllable with dc voltage applied to the device and input‐light intensity. These features are suggested to be potentially applicable for a new type of the spatial light modulator.
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73.50.Pz Photoconduction and photovoltaic effects
78.66.Sq Composite materials
85.60.Jb Light-emitting devices
85.60.-q Optoelectronic devices

Growth of in situ doped silicon epitaxial layer by rapid thermal processing

S. K. Lee, Y. H. Ku, T. Y. Hsieh, K. H. Jung, D. L. Kwong, David Spratt, and P. Chu

Appl. Phys. Lett. 57, 1628 (1990); http://dx.doi.org/10.1063/1.104069 (3 pages) | Cited 1 time

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In this letter, rapid thermal processing chemical vapor deposition has been used to grow high quality in situ doped silicon epitaxial layers. Device quality epilayers have been obtained for both boron and phosphorus doping with abrupt dopant transition profiles. The mobility values of these doped epilayers are very close to the values for bulk silicon under the same doping concentration.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
72.80.Cw Elemental semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Micro‐Raman characterization of structural defects in patterned GaAs‐on‐Si

W. M. Duncan, R. J. Matyi, H. Shichijo, Y.‐C. Kao, and H.‐Y. Liu

Appl. Phys. Lett. 57, 1631 (1990); http://dx.doi.org/10.1063/1.104070 (3 pages) | Cited 4 times

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We have applied micro‐Raman spectroscopy to the analysis of structural quality of GaAs‐on‐Si where the GaAs growth was performed through openings in an amorphous mask. The presence of the symmetry forbidden transverse optic (TO) phonon band and line shape of the longitudinal optic (LO) phonon band have been used to extract information concerning the structural quality of microscopic regions of GaAs from the Raman spectra. The utility of TO to LO phonon intensity ratios as a measure of crystal quality has been corroborated by correlation to x‐ray rocking curve full width. The structural quality of selectively grown GaAs as determined from first‐order Raman ratios is found to degrade in the vicinity of the transition between single crystal and polycrystalline regions. This work also shows that post‐growth annealing significantly improves the quality of structures with minimum feature size as small as 2 μm.
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78.30.Fs III-V and II-VI semiconductors
81.40.Tv Optical and dielectric properties related to treatment conditions
63.20.kp Phonon-defect interactions

Implantation profile of low‐energy positrons in solids

P. Asoka‐Kumar and K. G. Lynn

Appl. Phys. Lett. 57, 1634 (1990); http://dx.doi.org/10.1063/1.104071 (3 pages) | Cited 21 times

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A simple form for an implantation profile of monoenergetic, low‐energy (1–10 keV) positrons in solids is presented. Materials studied include aluminum, copper, molybdenum, palladium, and gold with atomic number ranging from 13 to 79. A simple set of parameters can describe the currently used Makhov profile in slow positron studies of solids. We provide curves and tables for the parameters that can be used to describe the implantation profiles of positrons in any material with atomic number in between 13 and 79.
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78.70.Bj Positron annihilation
61.85.+p Channeling phenomena (blocking, energy loss, etc.)
61.80.Fe Electron and positron radiation effects
78.90.+t Other topics in optical properties, condensed matter spectroscopy and other interactions of particles and radiation with condensed matter (restricted to new topics in section 78)

Possible dislocation multiplication source in (001) semiconductor epitaxy

J. Washburn and E. P. Kvam

Appl. Phys. Lett. 57, 1637 (1990); http://dx.doi.org/10.1063/1.104072 (3 pages) | Cited 11 times

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A cross‐slip mechanism, based on a commonly observed dislocation configuration and which can produce multiple misfit dislocations in the direction orthogonal to the initial slip direction, is put forth. The mechanism has eight crystallographic variants in (001) epitaxy, and is itself repeatable. The essence of the model is the configuration of the threading dislocation in the epilayer, which bends, avoiding an acute angle between the near‐surface screw segment and interfacial segment, resulting in a pinning point in the cross‐slip plane which is removed by some distance from the heterointerface.
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61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.35.Dv Composition, segregation; defects and impurities

Influence of indium doping on AlGaAs layers grown by molecular beam epitaxy

K. H. Chang, C. P. Lee, J. S. Wu, D. G. Liu, and D. C. Liou

Appl. Phys. Lett. 57, 1640 (1990); http://dx.doi.org/10.1063/1.104073 (3 pages) | Cited 3 times

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Influence of indium doping on the qualities of AlGaAs layers grown by molecular beam epitaxy has been studied. It was found that a proper amount of In doping can increase the photoluminescence intensity drastically by a factor greater than 10 indicating an improvement in the optical quality of AlGaAs epilayers. The improvement in the material quality is attributed to a higher surface migration rate of In atoms than those of Ga and Al atoms leading to a reduction of group III vacancies. However, too great a concentration of In atoms leads to effects that may degrade the film quality.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
61.72.U- Doping and impurity implantation
78.55.Cr III-V semiconductors

Influence of high‐dose γ irradiation on electron mobility in a silicon inversion layer

B. Majkusiak, A. Jakubowski, K. Grigorov, and A. Balasiński

Appl. Phys. Lett. 57, 1643 (1990); http://dx.doi.org/10.1063/1.104074 (2 pages)

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An influence of high‐dose γ irradiation on the dependence of electron mobility on transverse electric field in the silicon surface inversion layer is experimentally determined and considered.
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61.80.Ed γ-ray effects
72.10.Fk Scattering by point defects, dislocations, surfaces, and other imperfections (including Kondo effect)
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Deep donors in GaSb grown by molecular beam epitaxy

I. Poole, M. E. Lee, I. R. Cleverley, A. R. Peaker, and K. E. Singer

Appl. Phys. Lett. 57, 1645 (1990); http://dx.doi.org/10.1063/1.104075 (3 pages) | Cited 30 times

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A deep state possessing similar properties to those reported for DX centers in the AlGaAs system has been observed at atmospheric pressure in GaSb moderately doped with sulfur. The first detailed deep level transient spectroscopy study of this material has revealed a large energy barrier to electron capture and a correspondingly small capture cross section for this deep level. The deep level activity of selenium‐ and tellurium‐doped GaSb has also been investigated.
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71.55.Eq III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

p‐type delta‐doped layers in silicon: Structural and electronic properties

N. L. Mattey, M. G. Dowsett, E. H. C. Parker, T. E. Whall, S. Taylor, and J. F. Zhang

Appl. Phys. Lett. 57, 1648 (1990); http://dx.doi.org/10.1063/1.104076 (3 pages) | Cited 20 times

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We report on the properties of p‐type delta‐doped layers prepared in molecular beam epitaxy‐Si by growth interruption and evaporation of elemental B. Secondary‐ion mass spectrometry measurements at several primary ion energies have been used to show that the full width at half maximum is ∼2 nm. Hall measurements confirm that the layers are completely activated at 300 K with a mobility of 30±5 cm2/V s for a carrier density of (9±2)×1012 cm−2. At temperatures below 70 K nonmetallic behavior is observed which we have attributed to conduction between impurity states. It is concluded that the critical acceptor separation for the Mott metal‐insulator transition in this system is significantly less than the value found in uniformly doped Si:B.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
72.60.+g Mixed conductivity and conductivity transitions
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Correlation length of interface roughness and its enhancement in molecular beam epitaxy grown GaAs/AlAs quantum wells studied by mobility measurement

T. Noda, M. Tanaka, and H. Sakaki

Appl. Phys. Lett. 57, 1651 (1990); http://dx.doi.org/10.1063/1.104077 (3 pages) | Cited 27 times

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We have studied the correlation length (Λ) of interface roughness in GaAs/AlAs quantum wells (QWs) prepared by molecular beam epitaxy (MBE). It is found that the mobility of two‐dimensional electrons in very thin selectively doped GaAs/AlAs QW structures is substantially enhanced when the bottom AlAs barrier layer is prepared by alternate beam MBE and/or by the use of superlattice buffer layer below the QW. By measuring the electron concentration dependence of mobility and comparing with the theory of interface roughness scattering, we have found that Λ of the bottom (GaAs‐on‐AlAs) interface of the QW gets as large as 200–300 Å, when prepared by the modified growth technique, which is about three times as large as that (∼70 Å) by conventional MBE.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.35.Fx Diffusion; interface formation
68.35.B- Structure of clean surfaces (and surface reconstruction)
73.61.Ey III-V semiconductors

Lower plasma‐induced damage in SiO2/Si at lower temperatures

Tatsumi Mizutani, Takashi Yunogami, and Kazunori Tsujimoto

Appl. Phys. Lett. 57, 1654 (1990); http://dx.doi.org/10.1063/1.104133 (3 pages) | Cited 4 times

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We found that the radiation damage induced in a SiO2/Si system during plasma processing depends strongly on the specimen temperature. The surfaces of the SiO2 have been exposed to a microwave plasma at different temperatures and the resultant damage has been evaluated by capacitance‐voltage (C‐V) measurements. The flatband voltage shift (ΔVFB) for the specimen exposed to the plasma at 126 K has been found to be only 1/3 of that at 300 K. In case of vacuum ultraviolet photon irradiation through a thin Al film, the ΔVFB for the irradiation at 126 K has been only 1/5 of that at 300 K. It is believed that this lower plasma‐induced damage at the lower temperature is due to the small mobility of hole in SiO2 at lower temperatures. Plasma etching at low temperature has the advantage of low damage generation in the SiO2/Si structures.
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61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
85.40.Hp Lithography, masks and pattern transfer
81.65.-b Surface treatments

Radiation damage in ReSi2 by a MeV 4He beam

G. Bai, M‐A. Nicolet, John E. Mahan, Kent M. Geib, and Gary Y. Robinson

Appl. Phys. Lett. 57, 1657 (1990); http://dx.doi.org/10.1063/1.104134 (3 pages) | Cited 1 time

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Epitaxial ReSi2 thin films grown on Si (100) substrates were analyzed at room temperature by MeV 4He backscattering and channeling spectrometry. The minimum yield of [100] axial channeling increases with increasing exposure of the ReSi2 sample to the analyzing He beam. This means that ReSi2 suffers irradiation damage induced by a MeV 4He beam. The damage in the film induced by a beam incident along a random direction is about one order of magnitude larger than that induced by a beam with an aligned incidence, indicating that the damage is mainly generated by elastic collisions of nuclei. The experimentally measured defect concentration produced at 300 K by a beam of random incidence is compared with the theoretically estimated one produced at 0 K in an amorphous target. The agreement is fairly good, suggesting that the defects are stable at room temperature.
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61.80.Jh Ion radiation effects
61.85.+p Channeling phenomena (blocking, energy loss, etc.)
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Formation of titanium nitride layers by the nitridation of titanium in high‐pressure ammonium ambient

Tohru Hara, Kouichi Tani, Ken Inoue, Shigeaki Nakamura, and Takeshi Murai

Appl. Phys. Lett. 57, 1660 (1990); http://dx.doi.org/10.1063/1.104078 (3 pages) | Cited 4 times

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Nitridation of titanium layer is performed in a high‐pressure (5.9 kg/cm2) ammonium (NH3) ambient. Although the nitridation of titanium surface does not occur at 700 °C in an atmospheric pressure, it does occur at 650 °C in an ammonium pressure of 5.9 kg/cm2. Nitridation temperature can be lowered by 100–150 °C with an increase in ammonium pressure from 2.0 to 5.9 kg/cm2. Thickness of titanium nitride layer increased markedly with increasing ammonium pressure. This is due to the enhancement of the chemical reaction of titanium with ammonium gas by the increase of pressure. The thickness increases with an increase of nitridation temperature. The thickness of the titanium silicide layer formed by the silicidation reaction between titanium and the silicon wafer is reduced with the increase in ammonium pressure.
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82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
72.80.Cw Elemental semiconductors
73.30.+y Surface double layers, Schottky barriers, and work functions

ZnSe field‐effect transistors

D. L. Dreifus, B. P. Sneed, J. Ren, J. W. Cook, J. F. Schetzina, and R. M. Kolbas

Appl. Phys. Lett. 57, 1663 (1990); http://dx.doi.org/10.1063/1.104079 (3 pages) | Cited 3 times

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We report the first demonstration of ZnSe metal‐semiconductor field‐effect transistors. These new devices were fabricated from n‐type Cl‐doped epitaxial ZnSe layers grown by molecular beam epitaxy on (100) oriented semi‐insulating Cr‐doped GaAs substrates. Epitaxial layers with room‐temperature carrier concentrations of 1.6×1017 cm−3 and electron mobilities ranging from 400 to 500 cm2/V s were used for device fabrication. Au was used as a Schottky gate contact. Either In or a multilevel metallization scheme using Cr and In was employed for the source and drain ohmic contacts. Depletion‐mode transistor operation was observed for structures with 5 and 100 μm gate lengths and varying gate widths. The 5 μm gate length by 200 μm gate width device structures exhibited transconductances of 0.5 mS/mm.
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85.30.Tv Field effect devices
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.61.Ga II-VI semiconductors
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