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29 Oct 1990

Volume 57, Issue 18, pp. 1837-1938

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Intensity noise in the ultrahigh efficiency tandem‐contact quantum well lasers

Dragan Gajić and Kam Y. Lau

Appl. Phys. Lett. 57, 1837 (1990); http://dx.doi.org/10.1063/1.104032 (3 pages) | Cited 5 times

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We present theoretical and experimental results describing the intensity noise in the ultrahigh efficiency tandem‐contact single quantum well laser. We find that the substantial increase in the modulation efficiency of these lasers is accompanied by only a marginal increase in the intensity noise.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

GaInAs/GaAs thermally actuated optical switch

L. D. Partain, J. C. Schultz, G. F. Virshup, and M. Ladle Ristow

Appl. Phys. Lett. 57, 1840 (1990); http://dx.doi.org/10.1063/1.104033 (3 pages) | Cited 1 time

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A Ga0.8In0.2As/GaAs thermally actuated optical switch has been demonstrated for unpolarized 1.08 μm light. Its measured on:off contrast ratio of 4.7 was produced electrically by changing the applied voltage from 0 to 3.2 V on a device with a 2.25‐μm‐thick Ga0.8In0.2As active layer. The ‘‘on’’ insertion loss was 3.8 dB. The on:off change in Ga0.8In0.2As absorption coefficient was 6660 cm−1. The switching current density was 9.7 A/cm2. The thermal switching energy can be supplied optically for an all‐optical switch.
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42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
78.20.N- Thermo-optic effects
78.20.nb Photothermal effects

33 ps optical switching of symmetric self‐electro‐optic effect devices

G. D. Boyd, A. M. Fox, D. A. B. Miller, L. M. F. Chirovsky, L. A. D’Asaro, J. M. Kuo, R. F. Kopf, and A. L. Lentine

Appl. Phys. Lett. 57, 1843 (1990); http://dx.doi.org/10.1063/1.104034 (3 pages) | Cited 32 times

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We report significant improvement in the optical switching times of symmetric self‐electro‐optic effect devices due to enhanced tunneling by using a 35 Å barrier versus the previous 60 Å barrier thick multiple quantum well GaAs/AlxGa(1−x)As devices. Also, the voltage required for bistability was reduced from 10 V in the thick barrier devices to 3 V in the thin barrier devices with no apparent degradation in the contrast ratio.
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42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
42.65.Pc Optical bistability, multistability, and switching, including local field effects
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

All‐optical switching of picosecond pulses in a GaAs quantum well waveguide coupler

P. LiKamWa, A. Miller, C. B. Park, J. S. Roberts, and P. N. Robson

Appl. Phys. Lett. 57, 1846 (1990); http://dx.doi.org/10.1063/1.104035 (3 pages) | Cited 12 times

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A time‐resolved pump‐probe configuration employing 10 ps laser pulses has been used to investigate the all‐optical switching characteristics of zero‐gap directional couplers containing a single quantum well. All‐optical switching of the weak probe pulses from one port into the adjacent one was obtained at pump input pulse energies of 150 pJ. The switching takes place within the duration of the laser pump pulses. The recovery time of the device was found to be ∼1.5 ns which indicates that carrier diffusion plays a major role in the device switching speed.
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42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
42.79.Gn Optical waveguides and couplers
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.65.Pc Optical bistability, multistability, and switching, including local field effects

External‐beam switching in monolithic bistable GaAs quantum well étalons

B. G. Sfez, J. L. Oudar, J. C. Michel, R. Kuszelewicz, and R. Azoulay

Appl. Phys. Lett. 57, 1849 (1990); http://dx.doi.org/10.1063/1.104036 (3 pages) | Cited 18 times

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Monolithic bistable étalons with a GaAs/Al0.3Ga0.7As multiple quantum well active layer and AlAs/Al0.1Ga0.9As Bragg reflectors have been fabricated by metalorganic vapor phase epitaxy. They exhibit a very good memory effect. Experiments with an additional external beam at the same and at a different wavelength have been performed. They demonstrated thresholding, pulse shaping, amplification, and wavelength conversion. Moreover, the use of a diode laser external beam showed the possibility of controlling an intense beam with a weaker beam. We describe an experimental configuration in the reflection mode and at normal incidence, which allows mixing the two input beams and extracting the output beam with an ideal 100% efficiency.
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42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.65.Pc Optical bistability, multistability, and switching, including local field effects
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
85.60.-q Optoelectronic devices

Surface‐stabilized ferroelectric liquid‐crystal electro‐optic waveguide switch

Noel A. Clark and Mark A. Handschy

Appl. Phys. Lett. 57, 1852 (1990); http://dx.doi.org/10.1063/1.104037 (3 pages) | Cited 17 times

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We demonstrate control of the optical coupling between a pair of planar waveguides by application of voltage to surface‐stabilized ferroelectric liquid‐crystal films between them. A prototype switch exhibited a response time of 200 μs and a 40:1 switching ratio.
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42.79.Gn Optical waveguides and couplers
78.20.Jq Electro-optical effects
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
61.30.-v Liquid crystals

High‐power cw vertical‐cavity top surface‐emitting GaAs quantum well lasers

B. Tell, Y. H. Lee, K. F. Brown‐Goebeler, J. L. Jewell, R. E. Leibenguth, M. T. Asom, G. Livescu, L. Luther, and V. D. Mattera

Appl. Phys. Lett. 57, 1855 (1990); http://dx.doi.org/10.1063/1.104038 (3 pages) | Cited 28 times

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We have devised a novel vertical‐cavity top surface‐emitting GaAs quantum well laser structure which operates at 0.84 μm. The laser combines peripheral current injection with efficient heat removal and uses only the epitaxially grown semiconductor layers for the output mirrors. The structure is obtained by a patterned deep H+ implantation and anneal cycle which maintains surface conductivity while burying a high resistance layer. Peripheral injection of current occurs from the metallized contact area into the nonimplanted nonmetallized emission window. For 10‐μm‐diam emitting windows, ∼4 mA thresholds with continuous‐wave (cw) room‐temperature output powers ≳1.5 mW are obtained. Larger diameter emitting windows have maximum cw output powers greater than 3 mW. These are the highest cw powers achieved to date in current injected vertical‐cavity surface‐emitting lasers.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Effect of an AlAs/GaAs mirror on the spontaneous emission of an InGaAs‐GaAs quantum well

T. J. Rogers, D. G. Deppe, and B. G. Streetman

Appl. Phys. Lett. 57, 1858 (1990); http://dx.doi.org/10.1063/1.104120 (3 pages) | Cited 40 times

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Data are presented demonstrating a strong influence of a closely spaced AlAs/GaAs distributed Bragg reflector on the spontaneous emission characteristics of an InGaAs‐GaAs quantum well. The mirror to quantum well spacings on different crystal samples correspond to optical path lengths of either 1/4, 1/2, or 3/4 of the emission wavelength. The samples are characterized using photoluminescence, electroluminescence, and reflectivity measurements. Spontaneous emission is found to be greatly enhanced for a 1/2 wavelength spacing, while 1/4 and 3/4 spacings suppress the spontaneous emission by a factor of ≳1000.
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78.55.Cr III-V semiconductors
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.79.Ci Filters, zone plates, and polarizers

5 W GaAs/GaAlAs laser diodes with a reactive ion etched facet

S. S. Ou, J. J. Yang, and M. Jansen

Appl. Phys. Lett. 57, 1861 (1990); http://dx.doi.org/10.1063/1.104039 (3 pages) | Cited 11 times

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GaAs/GaAlAs laser diodes with reactive ion etched facets have been demonstrated for the first time with high output powers (5 W from 100‐μm‐wide apertures), high output power density (15 MW/cm2), and high slope efficiencies (66%) in junction‐up configuration under quasi‐cw operation. Mirror etching was performed in a pure SiCl4 gas environment by maintaining a low background pressure and gas pressure. High quality etched facets have been achieved with almost no scattering loss.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
81.65.-b Surface treatments
85.60.-q Optoelectronic devices

Buried‐heterostructure lasers fabricated by in situ processing techniques

Y. L. Wang, H. Temkin, L. R. Harriott, R. A. Logan, and T. Tanbun‐Ek

Appl. Phys. Lett. 57, 1864 (1990); http://dx.doi.org/10.1063/1.104042 (3 pages) | Cited 10 times

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We describe, for the first time, the preparation of InGaAs/InP homojunction confined buried‐heterostructure lasers by high vacuum processing techniques. Lithography and waveguide mesa etching were carried out using ultrathin native oxide masking, focused Ga ion beam writing, and free Cl2 etching. Base laser structures and overgrowth were carried out by atmospheric pressure metalorganic vapor phase epitaxy. The resulting lasers have low‐threshold currents of ∼62 mA.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
42.60.By Design of specific laser systems

Surface acoustic wave response to changes in viscoelastic film properties

S. J. Martin and G. C. Frye

Appl. Phys. Lett. 57, 1867 (1990); http://dx.doi.org/10.1063/1.104043 (3 pages) | Cited 31 times

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Changes in polymer viscoelastic properties have been monitored using polymer‐coated surface acoustic wave (SAW) devices. Glass transitions induced by temperature changes and absorption of gas phase species have been observed. The changes in wave propagation velocity and attenuation which accompany these transitions are explained using a Maxwell model to describe the viscoelastic properties of the film.
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43.35.Pt Surface waves in solids and liquids
43.35.Yb Ultrasonic instrumentation and measurement techniques
68.35.Gy Mechanical properties; surface strains
62.65.+k Acoustical properties of solids

Scanning electron acoustic microscopy of indentation‐induced cracks and residual stresses in ceramics

John H. Cantrell, Menglu Qian, M. V. Ravichandran, and K. M. Knowles

Appl. Phys. Lett. 57, 1870 (1990); http://dx.doi.org/10.1063/1.104019 (3 pages) | Cited 21 times

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The ability of scanning electron acoustic microscopy (SEAM) to characterize ceramic materials is assessed. SEAM images of Vickers indentations in SiC whisker‐reinforced alumina clearly reveal not only the radial cracks, the length of which can be used to estimate the fracture toughness of the material, but also reveal strong contrast, interpreted as arising from the combined effects of lateral cracks and the residual stress field left in the SiC whisker‐reinforced alumina by the indenter. The strong contrast is removed after the material is heat treated at 1000 °C to relieve the residual stresses around the indentations. A comparison of these observations with SEAM and reflected polarized light observations of Vickers indentations in soda‐lime glass both before and after heat treatment confirms our interpretation of the strong contrast.
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07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
62.20.M- Structural failure of materials
43.35.Sx Acoustooptical effects, optoacoustics, acoustical visualization, acoustical microscopy, and acoustical holography
81.70.-q Methods of materials testing and analysis

Wide area disk‐shaped vacuum ultraviolet lamp

Z. Yu, T. Y. Sheng, Z. Luo, and G. J. Collins

Appl. Phys. Lett. 57, 1873 (1990); http://dx.doi.org/10.1063/1.104020 (3 pages) | Cited 6 times

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A wide area vacuum ultraviolet (VUV) lamp employs a ring‐shaped cold cathode to produce an electron beam excited plasma of disk geometry. When excited by the soft vacuum electron beam, molecular hydrogen, nitrogen, and atomic helium emit strong atomic resonance radiation at 121.6, 120, and 58 nm, respectively. The VUV optical power emitted on the atomic resonance line is typically 6–10% of the total applied discharge power. The spatial uniformity of the VUV emission intensity at a discharge input power level of 30 W approaches 6% across the entire disk diameter, up to a maximum of 20 cm.
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52.80.Yr Discharges for spectral sources (including inductively coupled plasma)
52.75.-d Plasma devices
34.80.-i Electron and positron scattering

Particle trapping phenomena in radio frequency plasmas

Gary S. Selwyn, John E. Heidenreich, and Kurt L. Haller

Appl. Phys. Lett. 57, 1876 (1990); http://dx.doi.org/10.1063/1.104021 (3 pages) | Cited 175 times

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Particles generated in an argon plasma and suspended at the plasma/sheath boundary are localized by lateral trapping fields. In the commercial rf etching reactor used in this work, the particles and their motion in real time are observed by laser light scattering with the laser beam rapidly rastered in a plane parallel to the rf electrode. Repulsion between individual, relatively large particles is observed, verifying that there is significant negative charge on the particles. Two types of trapping regions are commonly seen: rings of particles around the outside edge of silicon wafers, and domes of particles over the centers of the wafers. It is shown that these effects are influenced by the topography of the electrode. In addition, particle densities >107 cm−3 for particles of diameter 0.2 μm are inferred from transmission studies for certain plasma conditions.
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52.20.Dq Particle orbits
52.25.Os Emission, absorption, and scattering of electromagnetic radiation
52.70.Nc Particle measurements
85.40.Hp Lithography, masks and pattern transfer

Growth of highly oriented tin oxide thin films by laser evaporation deposition

C. M. Dai, C. S. Su, and D. S. Chuu

Appl. Phys. Lett. 57, 1879 (1990); http://dx.doi.org/10.1063/1.103998 (3 pages) | Cited 24 times

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Conducting and transparent thin films of tin oxide were prepared by the laser evaporation of an undoped powder‐pressed polycrystalline tin oxide target onto unheated substrates. After characterizing these films, the results reveal that the films are highly oriented and with a grain size ∼0.2 μm. The nearly stoichiometric deposition of tin oxide films with deposition rates exceeding 24 Å per pulse was obtained by this method. The lowest resistivity obtained is 3.0×10−3 Ω cm. The visible transmittance (between 4000 and 7000 Å) is above 75%.
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81.15.Jj Ion and electron beam-assisted deposition; ion plating
73.61.Ng Insulators
78.66.-w Optical properties of specific thin films
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Quantitative theory for laser ultrasonic waves in a thin plate

J. B. Spicer, A. D. W. McKie, and J. W. Wagner

Appl. Phys. Lett. 57, 1882 (1990); http://dx.doi.org/10.1063/1.103999 (3 pages) | Cited 31 times

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Numerical inversion of the Hankel–Laplace transform has been performed for the case of ultrasonic displacements in an infinite, homogeneous, isotropic plate which is excited thermoelastically by a laser pulse. Values for the elastic moduli and the plate thickness may be extracted when the calculated displacements are compared directly to those obtained experimentally. Previous authors have demonstrated methods for determining the elastic modulus in thick plates; this letter shows that using a different method for the development of the theory allows similar modulus determinations to be made for thin as well as thick plates.
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43.35.Cg Ultrasonic velocity, dispersion, scattering, diffraction, and attenuation in solids; elastic constants
43.35.Zc Use of ultrasonics in nondestructive testing, industrial processes, and industrial products
62.20.D- Elasticity
46.80.+j Measurement methods and techniques in continuum mechanics of solids

Cubic boron nitride films deposited by electron cyclotron resonance plasma

S. Y. Shapoval, V. T. Petrashov, O. A. Popov, A. O. Westner, M. D. Yoder, and C. K. C. Lok

Appl. Phys. Lett. 57, 1885 (1990); http://dx.doi.org/10.1063/1.104000 (2 pages) | Cited 25 times

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By employing an electron cyclotron resonance plasma‐enhanced chemical vapor deposition technique, we report the successful growth of cubic boron nitride films on single‐crystal (100) silicon wafer without external rf or dc substrate biasing. Ammonia and boron trifluoride gases were used for the deposition of cubic boron nitride. The substrate temperature during deposition was about 675 °C. The films were characterized by infrared spectroscopy and ellipsometry. The existence of cubic boron nitride was identified by the characteristic boron nitride infrared signal at 1110 cm−1. The film thickness was about 1000 Å, with a growth rate of 100 Å/min.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
78.66.-w Optical properties of specific thin films

Delta‐doped quantum well structures grown by molecular beam epitaxy

D. G. Liu, C. P. Lee, K. H. Chang, J. S. Wu, and D. C. Liou

Appl. Phys. Lett. 57, 1887 (1990); http://dx.doi.org/10.1063/1.104001 (2 pages) | Cited 19 times

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Delta doping in quantum well structures has been studied. The quantum wells consist of a strained InGaAs layer sandwiched between two GaAs layers. The layers were undoped except for a sheet of Si dopants deposited in the middle of the quantum well. Structures with various doses and quantum well thicknesses were studied and compared. Capacitance voltage measurements were carried out to determine the carrier distribution. A very narrow carrier profile with a full width at half maximum of only 12 Å has been achieved. This is the narrowest carrier profile ever reported for any growth technique.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Intrinsic and extrinsic recombination radiation from undoped and boron‐doped diamonds formed by plasma chemical vapor deposition

H. Kawarada, Y. Yokota, and A. Hiraki

Appl. Phys. Lett. 57, 1889 (1990); http://dx.doi.org/10.1063/1.104002 (3 pages) | Cited 25 times

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In small particles of chemical vapor deposited (CVD) diamond and polycrystalline thin films composed of the particles, the recombination radiation of free excitons and bound excitons associated with multiple phonons has been observed using cathodoluminescence. The bound excitons are due to neutral acceptors of boron in the diamonds. The cathodoluminescence imaging reveals that the recombinations of free excitons are located at {100} sectors. The crystal perfection and purity is high in {100} sectors compared with {111} sectors formed in the CVD process.
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78.60.Hk Cathodoluminescence, ionoluminescence
78.66.-w Optical properties of specific thin films
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Effect of oxygen‐implant isolation on the recombination leakage current of n‐p+ AlGaAs graded heterojunction diodes

Kazuo Watanabe, Koichi Nagata, Hajime Yamazaki, Satoru Ishida, and Takehisa Ichijo

Appl. Phys. Lett. 57, 1892 (1990); http://dx.doi.org/10.1063/1.104003 (3 pages) | Cited 5 times

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The recombination leakage current induced by planar isolation of n‐p+AlGaAs graded heterojunction area with oxygen ion implantation followed by annealing at 500–650 °C has been investigated. The recombination leakage current is smaller than that induced by conventional isolation with hydrogen ion implantation; specifically, it is about one order of magnitude smaller after the higher temperature (600–650 °C) annealing. The main origin of the remaining recombination leakage current is probably not oxygen deep levels but rather recombination centers related to the ion implantation damage that remains after annealing. A point‐defect complex level, which may be related to the recombination center, is detected at an activation energy of around 0.8 eV by deep level transient spectroscopy.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.30.Kk Junction diodes
71.55.Eq III-V semiconductors

InGaAs/InAlAs superlattice avalanche photodiode with a separated photoabsorption layer

Toshiaki Kagawa, Yuichi Kawamura, Hiromitsu Asai, and Mitsuru Naganuma

Appl. Phys. Lett. 57, 1895 (1990); http://dx.doi.org/10.1063/1.104004 (3 pages) | Cited 6 times

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A novel structure superlattice avalanche photodiode is proposed. A p‐InGaAs photoabsorption layer is separated from a nondoped InGaAs/InAlAs superlattice avalanche multiplication region. The electric field strength at the photoabsorption layer is controlled by a thin, highly doped p‐InGaAs layer, which is sandwiched between the multiplication and photoabsorption layers. Devices with this structure were fabricated by molecular beam epitaxy. The external quantum efficiency is 73% at the multiplication factor of unity. The multiplication noise is quite small corresponding to an effective ionization rate ratio of 0.1. The maximum 3 dB bandwidth is 9.3 GHz.
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85.60.Dw Photodiodes; phototransistors; photoresistors
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Charge‐state‐dependent iron precipitation in silicon

A. Mesli, T. Heiser, N. Amroun, and P. Siffert

Appl. Phys. Lett. 57, 1898 (1990); http://dx.doi.org/10.1063/1.104005 (3 pages) | Cited 4 times

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The kinetics of interstitial iron precipitation in p‐type silicon are investigated. During annealing, the iron charge state is controlled by the applied reverse voltage and its effect on the precipitation is studied. We observe that iron in the neutral charge state (Fe0i) precipitates preferentially in three‐dimensional nucleation centers while Fe+ivanishes in the dislocation lines (rod‐like nucleation centers). These centers are created during the fast cooling procedure necessary to dissolve iron in the silicon matrix.
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61.72.Yx Interaction between different crystal defects; gettering effect
66.30.J- Diffusion of impurities
71.55.Ht Other nonmetals

ZnSe light‐emitting diodes

J. Ren, K. A. Bowers, B. Sneed, D. L. Dreifus, J. W. Cook, J. F. Schetzina, and R. M. Kolbas

Appl. Phys. Lett. 57, 1901 (1990); http://dx.doi.org/10.1063/1.104006 (3 pages) | Cited 50 times

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We report the successful fabrication of ZnSe p‐n junction light‐emitting diodes in which Li and Cl are used as p‐type and n‐type dopants, respectively.
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85.60.Jb Light-emitting devices
85.30.Kk Junction diodes
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Improvement of electrical characteristics of polycrystalline silicon‐contacted diodes after forward bias stressing

S. L. Wu, C. L. Lee, and T. F. Lei

Appl. Phys. Lett. 57, 1904 (1990); http://dx.doi.org/10.1063/1.104007 (3 pages) | Cited 1 time

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Improvement of the electrical characteristics of polycrystalline silicon (polysilicon) contacted n+‐p diodes after application of a forward bias stressing is reported. The improvement existed for diodes whose emitter‐implanted doses of arsenic were larger than 6×1015 cm−2 for HF‐dipped devices, and 1×1016 cm−2 for H2SO4 heat‐treated devices. The improvement is believed to be due to the neutralization by arsenic of dangling bonds at polysilicon grain boundaries and at the poly/mono silicon interfaces during the stressing process.
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85.30.Kk Junction diodes
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
81.40.Rs Electrical and magnetic properties related to treatment conditions
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Lithium doping and photoemission of diamond thin films

K. Okumura, J. Mort, and M. Machonkin

Appl. Phys. Lett. 57, 1907 (1990); http://dx.doi.org/10.1063/1.104008 (3 pages) | Cited 44 times

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Diamond films have been in‐diffused with lithium in an effort to produce n‐type diamond by interstitial doping. Although lithium incorporation was established, only small changes in electrical conductivity and no thermionic emission from donor levels, which should lie only a few tenths of an electron volt below the vacuum level, were observed. To account for these observations, studies of the spectral dependence of external photoemission of lithium‐doped and undoped films were undertaken. These indicate that the lithium donors are compensated by high densities of acceptor states distributed over several electron volts. This first, direct observation of band‐gap states in diamond films accounts for a number of reported properties including their relatively high electrical conductivity and small field effect.
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73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
81.65.-b Surface treatments
72.80.Cw Elemental semiconductors
61.72.up Other materials
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