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Applied Physics Letters / Volume 57 / Issue 18

Appl. Phys. Lett. 57, 1855 (1990); http://dx.doi.org/10.1063/1.104038 (3 pages)

High‐power cw vertical‐cavity top surface‐emitting GaAs quantum well lasers

B. Tell1, Y. H. Lee1, K. F. Brown‐Goebeler1, J. L. Jewell1, R. E. Leibenguth2, M. T. Asom2, G. Livescu2, L. Luther2, and V. D. Mattera2

1AT&T Bell Laboratories, Holmdel, New Jersey 07733
2AT&T Bell Laboratories, STC, Breinigsville, Pennsylvania 18031

(Received 16 July 1990; accepted 23 August 1990)

We have devised a novel vertical‐cavity top surface‐emitting GaAs quantum well laser structure which operates at 0.84 μm. The laser combines peripheral current injection with efficient heat removal and uses only the epitaxially grown semiconductor layers for the output mirrors. The structure is obtained by a patterned deep H+ implantation and anneal cycle which maintains surface conductivity while burying a high resistance layer. Peripheral injection of current occurs from the metallized contact area into the nonimplanted nonmetallized emission window. For 10‐μm‐diam emitting windows, ∼4 mA thresholds with continuous‐wave (cw) room‐temperature output powers ≳1.5 mW are obtained. Larger diameter emitting windows have maximum cw output powers greater than 3 mW. These are the highest cw powers achieved to date in current injected vertical‐cavity surface‐emitting lasers.

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KEYWORDS and PACS

Keywords

LASER CAVITIES, DESIGN, FABRICATION, OPERATION, SEMICONDUCTOR LASERS, PERFORMANCE, POWER, USES, EXPERIMENTAL DATA, THRESHOLD CURRENT

PACS

  • 42.60.Da

    Resonators, cavities, amplifiers, arrays, and rings

  • 42.55.Px

    Semiconductor lasers; laser diodes

  • 42.60.Jf

    Beam characteristics: profile, intensity, and power; spatial pattern formation

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.104038

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

For access to fully linked references, you need to log in.
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    K. Tai, R. J. Fischer, C. W. Seabury, N. A. Olsson, T. D. C. Hus, Y. Ota, and A. Y. Cho, Appl. Phys. Lett. 55, 2473 (1989APPLAB000055000024002473000001).

    E. F. Schubert, L. W. Tu, R. F. Kopf, G. J. Zydzik, and D. G. Deppe, Appl. Phys. Lett. 57, 117 (1990APPLAB000057000002000117000001).

    K. Tai, L. Yang, Y. H. Wang, J. D. Wynn, and A. Y. Cho, Appl. Phys. Lett. 56, 2496 (1990APPLAB000056000025002496000001).

    C. I. Chang-Hasnain, M. Orenstein, A. Von Lehmen, L. T. Florez, J. P. Harbison, and N. G. Stoffel, Appl. Phys. Lett. 57, 218 (1990APPLAB000057000003000218000001).


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