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5 Nov 1990

Volume 57, Issue 19, pp. 1949-2034

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Subsurface heating effects during pulsed laser evaporation of materials

Rajiv K. Singh, D. Bhattacharya, and J. Narayan

Appl. Phys. Lett. 57, 2022 (1990); http://dx.doi.org/10.1063/1.104118 (3 pages) | Cited 62 times

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We have theoretically and experimentally investigated the thermal effects of targets evaporated by nanosecond laser pulses. The subsurface temperatures were calculated to be higher than the surface temperatures during planar surface evaporation of the target material. While the evaporating surface is being cooled due to the latent heat of vaporization, subsurface superheating occurs due to a finite absorption depth of the laser beam. The temperature profiles of silicon targets irradiated by nanosecond laser pulses were determined by solving the one‐dimensional heat flow equation using an implicit finite difference method. The subsurface superheating increased at higher energy densities, and decreased with increasing absorption coefficient of the material. This internal heating of the target during pulsed laser irradiation can be correlated with the explosive removal of material from the target. This may lead to deposition of small particles on films fabricated by the pulsed laser evaporation technique.
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61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
81.65.-b Surface treatments
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Formation mechanism study of REBa2Cu4O8+δ (RE=Y and Dy) accelerated by nitric acid

W.‐M. Hurng, S. F. Wu, C. Y. Shei, Y. T. Huang, and W. H. Lee

Appl. Phys. Lett. 57, 2025 (1990); http://dx.doi.org/10.1063/1.104154 (3 pages) | Cited 10 times

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An accelerated formation of REBa2Cu4O8+δ (RE=Y and Dy) was observed as a suitable amount of nitric acid was added. This provides an excellent route for preparing high‐ purity REBa2Cu4O8+δ in ∼ 30 h. X‐ray diffraction and thermal analyses (TGA/DTA) were conducted to reveal the formation mechanism. The addition of nitric acid did not change the reaction routes but formed more Ba2Cu3O5 which might play an important role for the formation of REBa2Cu4O8+δ. Magnetization data confirmed the Tc’s of 80 and 75 K for as‐prepared Y‐124 and Dy‐124, respectively.
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74.70.-b Superconducting materials other than cuprates
74.81.Bd Granular, melt-textured, amorphous, and composite superconductors
81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation

Side plane domain observation of Fe‐C/Ni‐Fe/BN multilayers with a spin‐polarized scanning electron microscope

H. Matsuyama, K. Koike, T. Kobayashi, R. Nakatani, and K. Yamamoto

Appl. Phys. Lett. 57, 2028 (1990); http://dx.doi.org/10.1063/1.103996 (3 pages) | Cited 2 times

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Magnetization distributions of four‐magnetic‐layer (0.5 μm/layer) strips (300×50 μm2) are observed on the top and side planes using a spin‐polarized scanning electron microscope. From the domain images of the side planes, the magnetization direction of each magnetic layer is studied. The strips do not always show the predicted energy minimum magnetic structure, in which the magnetization direction alternates layer by layer.
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75.60.Ch Domain walls and domain structure
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.70.Kw Domain structure (including magnetic bubbles and vortices)

Ultrafast time resolution in scanned probe microscopies

R. J. Hamers and David G. Cahill

Appl. Phys. Lett. 57, 2031 (1990); http://dx.doi.org/10.1063/1.103997 (3 pages) | Cited 24 times

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The speed limitations conventionally encountered in scanning tunneling microscopy, scanning capacitance microscopy, and atomic force microscopy result from the external electronics and are not inherent to the techniques themselves. Ultrafast time resolution faster than the bandwidth of the measuring electronics can be achieved by combining these techniques with picosecond optical excitation and utilizing inherent nonlinearities in the physical system. We demonstrate this idea by directly measuring carrier relaxation times at the Si(111)‐(7×7) surface on the nanosecond time scale via scanning capacitance microscopy measurements of the surface photovoltage.
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78.47.-p Spectroscopy of solid state dynamics
73.25.+i Surface conductivity and carrier phenomena
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
FREE

Erratum: Anisotropic and inhomogeneous strain relaxation in pseudomorphic In0.23Ga0.77As/GaAs quantum wells [Appl. Phys. Lett. 55, 1765 (1989)]

M. Grundmann, U. Lienert, D. Bimberg, A. Fischer‐Colbrie, and J. N. Miller

Appl. Phys. Lett. 57, 2034 (1990); http://dx.doi.org/10.1063/1.104290 (1 page) | Cited 1 time

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Abstract Unavailable
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62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances
61.50.Ah Theory of crystal structure, crystal symmetry; calculations and modeling
61.05.cf X-ray scattering (including small-angle scattering)
61.05.cj X-ray absorption spectroscopy: EXAFS, NEXAFS, XANES, etc.
99.10.Cd Errata
FREE

Erratum: Laser‐induced surface acoustic waves and photothermal surface gratings generated by crossing two pulsed laser beams [Appl. Phys. Lett. 57, 132 (1990)]

Akira Harata, Hiroyuki Nishimura, and Tsuguo Sawada

Appl. Phys. Lett. 57, 2034 (1990); http://dx.doi.org/10.1063/1.104291 (1 page)

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Abstract Unavailable
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43.35.Pt Surface waves in solids and liquids
43.35.Sx Acoustooptical effects, optoacoustics, acoustical visualization, acoustical microscopy, and acoustical holography
68.35.Gy Mechanical properties; surface strains
99.10.Cd Errata
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